CN108074805A - The processing method of chip - Google Patents
The processing method of chip Download PDFInfo
- Publication number
- CN108074805A CN108074805A CN201711069366.4A CN201711069366A CN108074805A CN 108074805 A CN108074805 A CN 108074805A CN 201711069366 A CN201711069366 A CN 201711069366A CN 108074805 A CN108074805 A CN 108074805A
- Authority
- CN
- China
- Prior art keywords
- chip
- segmentation
- wafer
- expansion bands
- implemented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Abstract
The processing method for providing chip can prevent the pollution from chip sides obtained by chip segmentation.After modification layer (R) is formd inside chip (W) along segmentation preset lines (L), by the use of grinding action to modify layer as starting point, chip is split along segmentation preset lines.Then, after the back side for the chip being ground pastes expansion bands (ET), expansion bands are extended on the direction for being separated from each other adjacent chip (C), gap (S) is formed in adjacent chip chamber.Then, making dry ice particle (DR), injection to the gap of chip chamber, cleans chip chamber at a high speed along multiple chip chambers.
Description
Technical field
The present invention relates to the processing methods of chip, divide the wafer into multiple device chips.
Background technology
Processing method as chip, it is proposed that use the SDBG (Stealth that will be laser machined and grinding is combined
Dicing Before Grinding, first stealthy cutting are ground again) method (for example, referring to patent document 1).In SDBG,
After guard block is pasted on the front side of the wafer, from the back side of chip while making the ripple that there is permeability for chip
Long pulse laser light is focused at the inside of chip while being irradiated along the segmentation preset lines of chip.As a result, in chip
Inside along segmentation preset lines formed modification layer.After modification layer is formd, using the holding unit of grinding attachment to crystalline substance
The guard block side of piece is kept.Also, rotate grinding grinding tool while pressing the back side of chip and being ground, from
And wafer thinning to defined completion thickness, and chip is divided into respectively due to grinding force using modifying layer as segmentation starting point
A device chip.
Patent document 1：No. 3762409 publications of Japanese Patent Publication No.
But in the processing method of above-mentioned chip, chip monolithic in grinding process is melted into chip, therefore single
Grindstone dust can enter chip chamber in the state of piece.Accordingly, there exist following problems：The attachments such as grindstone dust are attached to chip side
The reason for being polluted on face, becoming product defects.
The content of the invention
The present invention be in view of the point and complete, the first purpose is to provide a kind of processing method of chip, Neng Goufang
Only from the pollution of chip sides obtained by chip segmentation.
The processing method of the chip of one embodiment of the present invention, the chip being divided by segmentation preset lines on front are more
Device is formed in a region, which is characterized in that the processing method of the chip has the steps：Layer forming step is modified,
From the back side of chip by the focal point of the laser beam of the wavelength for chip with permeability be positioned at inner wafer and along
Segmentation preset lines are irradiated, and modification layer is formed in inner wafer；Segmentation step, after modification layer forming step is implemented,
It is ground from the back side of chip using grinding unit and makes wafer thinning to completion thickness, and acted using grinding to modify
Layer is split chip along segmentation preset lines as starting point；Expansion bands gluing steps, after segmentation step is implemented,
Expansion bands are pasted in the back side being ground；Band spread step, after expansion bands gluing steps are implemented, to expansion bands
It is extended, is extended on the direction for being separated from each other adjacent chip and forms gap in adjacent chip chamber；And
Chip chamber cleaning step, implement band spread step after, make dry ice particle at a high speed injection to the gap of chip chamber and along
Multiple chip chambers are sprayed, and chip chamber is cleaned.
According to this method, making dry ice particle, injection is cleaned to the gap of chip chamber at a high speed, therefore can be efficiently
Remove the attachment of chip sides.Thereby, it is possible to avoid the state that chip sides holding is contaminated, after processing can be improved
The product quality of chip.
According to the present invention, cleaned, therefore can be prevented obtained by chip is split using the injection of dry ice particle
The pollution of chip sides.
Description of the drawings
Fig. 1 is the approximate three-dimensional map of the chip of embodiment.
Fig. 2 is the definition graph for modifying layer forming step.
Fig. 3 is the definition graph of segmentation step.
Fig. 4 is the definition graph of expansion bands gluing steps.
Fig. 5 is the definition graph with spread step.
Fig. 6 is the definition graph of chip chamber cleaning step.
Fig. 7 is the definition graph of chip chamber cleaning step.
Label declaration
22：It is ground emery wheel (grinding unit)；C：Chip；D：Device；DR：Dry ice particle；ET：Expansion bands；L：Segmentation is predetermined
Line；R：Modify layer；S：Gap；W：Chip；W1：Front；W2：The back side.
Specific embodiment
Hereinafter, the processing method of the chip of present embodiment is illustrated referring to the drawings.First, with reference to Fig. 1, to utilizing
The chip that the processing method of the chip of present embodiment is processed illustrates.Fig. 1 is the outline of the chip of present embodiment
Stereogram.
As shown in Figure 1, wafer W be shaped generally as it is disk-shaped.It is clathrate on the positive W1 of wafer W to be configured with a plurality of point
Preset lines L is cut, and is formed with the multiple device D divided by segmentation preset lines L.Be pasted on the positive W1 of wafer W for pair
The protection band T that device D is protected.
Wafer W for example with thickness more than 300 [μm], is divided by being combined with the SDBG of Laser Processing and grinding
It is cut into each device chip.In this case, after modification layer is formd in wafer W using Laser Processing, grinding is utilized
Wafer W is ground to completion thickness by processing, and wafer W is split as segmentation starting point using modifying layer.In addition, wafer W
Can be formed on the semiconductor substrates such as silicon, GaAs the semiconductor devices such as IC, LSI semiconductor wafer or
The optical device wafer of the optical devices such as LED is formed on the inorganic material substrates such as sapphire, carborundum.
Then, with reference to Fig. 2 to Fig. 7, the processing method of the chip of present embodiment is illustrated.Fig. 2 shows modification layer
The definition graph of forming step, Fig. 3 show the definition graph of segmentation step, and Fig. 4 shows the definition graph of expansion bands gluing steps, and Fig. 5 shows
Go out the definition graph with spread step, Fig. 6 and Fig. 7 show the definition graph of chip chamber cleaning step.In addition, in the present embodiment,
To an example of the processing method of chip applied to SDBG is illustrated, but can be applied in the inside of chip modify layer work
The other methods being split for starting point.
As shown in Fig. 2, implement modification layer forming step first.In layer forming step is modified, first, protection band is pasted with
The wafer W of T is adsorbed and is held on the holding workbench 10 of laser processing device (not shown) across protection band T.Then, will add
The exit wound of bullet of foreman 11 is positioned at the surface of the segmentation preset lines of wafer W, is irradiated from processing head 11 towards the back side W2 of wafer W
Laser beam.Laser beam is adjusted to the wavelength for having permeability for wafer W, and focal point is positioned to the inside of wafer W.
It is adjusted in this way and processing head 11 is made to be made a relative move compared with wafer W, so as to form edge in the inside of wafer W
The modification layer R of segmentation preset lines.
After modification layer forming step is implemented, as shown in figure 3, implementing segmentation step.In segmentation step, it is being ground
On the chuck table 21 of device 20 wafer W is kept across protection band T.It is ground as follows：Making grinding emery wheel, (grinding is single
Member) 22 rotate while close to chuck table 21, from nozzle (not shown) injection grinding fluid, and make grinding emery wheel 22 and
The back side W2 rotating contacts of wafer W, so as to which wafer W is thinned to completion thickness.It is acted using the grinding, from grinding emery wheel 22 to changing
Matter layer R acts on grinding force, and crackle is extended using modifying layer R as starting point on the thickness direction of wafer W.Wafer W quilt as a result,
Each chip C is correspondingly formed along the segmentation of segmentation preset lines with device (with reference to Fig. 4).
After segmentation step is implemented, as shown in figure 4, implementing expansion bands gluing steps.In expansion bands gluing steps,
Wafer W is configured in the inside of frame F annular in shape, then in the back side for the wafer W being ground (lower surface) W2 sides and frame
Integrally paste expansion bands ET in the lower face side of frame F.Wafer W is installed on frame F by expansion bands ET as a result,.
After expansion bands gluing steps are implemented, as shown in figure 5, out tape spread step.In band spread step,
Load wafer W on the extension drum 31 of expanding unit (not shown), the frame F around wafer W is kept by frame maintaining part 32.This
When, the diameter of extension drum 31 is more than wafer W, for the expansion bands ET between wafer W and frame F, the neighboring of extension drum 31
It is in contact with it from downside.Also, frame maintaining part 32 is moved to descent direction, is relatively jacked up so as to extend drum 31.
Separate by extending drum 31 and frame maintaining part 32, expansion bands ET extends in radiation direction.In other words, expansion bands
ET is extended up in the side for being separated from each other adjacent chip C, forms gap S between adjacent chip C on the wafer W.
After band spread step is implemented, as shown in Figure 6 and Figure 7, implement chip chamber cleaning step.Fig. 7 shows Fig. 6
Line A-A sectional view.In chip chamber cleaning step, first, the shape of gap S is formed between adjacent chip C is maintained
Under state, the front end of injection nozzle 41 of dry ice particle DR will be sprayed with the front end of nozzle 42 (not shown in figure 6) is attracted to position
In the surface of gap S.At this point, injection nozzle 41 is arranged with attraction nozzle 42 on the extending direction of gap S, in injection nozzle
41 injection direction downstream side, which is arranged, attracts nozzle 42.Then, dry ice particle is sprayed at a high speed from injection nozzle 41 towards gap S
DR, and using the air near part of the nozzle 42 to jetted dry ice particle DR is attracted to attract.So sprayed
It penetrates and attracts, and injection nozzle 41 and attraction nozzle 42 make a relative move compared with gap S, are sprayed along between multiple chip C
Penetrate dry ice particle DR.
Here, the dry ice particle DR sprayed using injection nozzle 41 is for example generated by liquefied carbon dioxide and with being utilized compression
The air of machine compression is mixed and sprayed.Injection nozzle 41 can spray dry ice particle with dotted or wire any way
DR, it can be single and multiple any amount to set quantity.The dry ice particle DR sprayed is blown to the core for forming gap S
The side of piece C or its near zone are simultaneously collided.By the collision, dry ice particle DR is invaded to chip C and accompanying mill
Between the attachments such as swarf.Gasification expansion occurs for the dry ice particle DR invaded, so as to which attachment be removed from chip C, and
The physical bullet of generation flies, being cleaned forming the chip C of gap S.The attachment that bullet flies is attracted nozzle 42 and attracts union
Dirt and removed from chip C.
It is the dry clean without using cleaning solution or liquid in the case where so being cleaned using dry ice particle DR,
Therefore can not should to the expanding unit of wet environment in can also clean, and cleaning solution etc. is not recycled or located
The burden of reason etc., can realize the simplification of process.In addition, flow velocity or grain size by controlling dry ice particle DR, can carry out
The adjustment of cleaning ability can play consistently cleaning performance.
As described above, according to the processing method of the above embodiment, the dry ice particle DR sprayed enters the interior of gap S
Side is removed so as to be flown the attachment bullet of chip C sides using dry ice particle DR.Therefore, in the segmentation step of SDBG
In, it, also can be well to core even if the grinding fluid or grindstone dust caused by grinding enter gap S and be attached to the side of chip C
It is cleaned between piece C, the product quality of chip C can be improved.In addition, in the cleaning carried out by the injection of dry ice particle DR,
Being difficult to the attachment removed by the cleaning using the liquid such as pure water or pressure-air can also simply remove, can be efficiently
The pollution of the side of chip C is prevented being cleaned chip C.
In addition, there is provided attracting nozzle 42, thus can to the dry ice particle DR that is sprayed by using injection nozzle 41 and
The attachment that bullet flies is drawn and is removed from chip C, it can be prevented to be again attached to chip C.
In addition, embodiments of the present invention are not limited to above-mentioned each embodiment, the skill of the present invention can not departed from
It makes various changes, replace, deform in the range of the purport of art thought.If in addition, pass through technological progress or other derivative skills
Art can otherwise realize the technological thought of the present invention, then can also be implemented using this method.Therefore, claims
Cover all embodiments that can be included in the range of the technological thought of the present invention.
Can also after the chip chamber cleaning step of the above embodiment is implemented, will pacify by expansion bands ET
Wafer W loaded on frame F is transported to rotary cleaning device, and rotary-cleaning is carried out to the front of each chip C.In this case, if
It can will be removed using rotary-cleaning by dry ice particle DR and the attachment that bullet flies from chip C, then can be omitted attraction nozzle
42 setting.
As described above, the present invention has following effect：It can prevent from chip sides obtained by chip segmentation
Pollution, chip is split using SDBG and in the case of forming chip it is useful.
Claims (1)
1. a kind of processing method of chip, which is formed with device in the multiple regions divided by segmentation preset lines on front
Part, wherein, the processing method of the chip has the steps：
Layer forming step is modified, is determined from the back side of chip by the focal point of the laser beam of the wavelength for chip with permeability
It is irradiated positioned at inner wafer along segmentation preset lines, modification layer is formed in inner wafer；
Segmentation step, after the modification layer forming step is implemented, be ground from the back side of chip using grinding unit and
Make wafer thinning extremely completion thickness, and acted by the use of grinding using the modification layer as starting point and along the segmentation preset lines to crystalline substance
Piece is split；
Expansion bands gluing steps after the segmentation step is implemented, paste expansion bands in the back side being ground；
Band spread step, after the expansion bands gluing steps are implemented, expansion bands are extended, make adjacent chip that
It is extended on this separated direction and forms gap in adjacent chip chamber；And
Chip chamber cleaning step after the band spread step is implemented, makes dry ice particle spray between the chip chamber at a high speed
Gap and sprayed along multiple chip chambers, chip chamber is cleaned.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016220796A JP2018078249A (en) | 2016-11-11 | 2016-11-11 | Wafer processing method |
| JP2016-220796 | 2016-11-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108074805A true CN108074805A (en) | 2018-05-25 |
Family
ID=62149247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711069366.4A Pending CN108074805A (en) | 2016-11-11 | 2017-11-03 | The processing method of chip |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018078249A (en) |
| KR (1) | KR20180053246A (en) |
| CN (1) | CN108074805A (en) |
| TW (1) | TW201820438A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459498A (en) * | 2019-08-14 | 2019-11-15 | 錼创显示科技股份有限公司 | Injection component, micro-led repair apparatus and repair method |
| CN110491795A (en) * | 2019-08-14 | 2019-11-22 | 錼创显示科技股份有限公司 | It is viscous to take element, micro-led optics repair apparatus and optics repair method |
| CN111199916A (en) * | 2018-11-16 | 2020-05-26 | 株式会社迪思科 | Method for processing laminate |
| CN112786753A (en) * | 2019-11-11 | 2021-05-11 | 厦门市三安光电科技有限公司 | LED chip and manufacturing method |
| CN112809204A (en) * | 2021-02-04 | 2021-05-18 | 厦门大学 | Laser cutting decarbonization device and method for polyimide cover film |
| CN113421950A (en) * | 2021-06-21 | 2021-09-21 | 安徽华晟新能源科技有限公司 | Method for manufacturing solar cell |
| US11355402B2 (en) | 2019-08-14 | 2022-06-07 | PlayNitride Display Co., Ltd. | Adhesion device, micro device optical inspection and repairing equipment and optical inspection and repairing method |
| US11668742B2 (en) | 2019-08-14 | 2023-06-06 | PlayNitride Display Co., Ltd. | Injection device, micro light emitting diode inspection and repairing equipment and inspection and repairing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110491795A (en) * | 2019-08-14 | 2019-11-22 | 錼创显示科技股份有限公司 | It is viscous to take element, micro-led optics repair apparatus and optics repair method |
| CN110459498B (en) * | 2019-08-14 | 2021-10-22 | 錼创显示科技股份有限公司 | Injection element, miniature light-emitting diode overhauling equipment and overhauling method |
| CN110491795B (en) * | 2019-08-14 | 2021-11-16 | 錼创显示科技股份有限公司 | Sticking element, micro light-emitting diode optical maintenance equipment and optical maintenance method |
| US11355402B2 (en) | 2019-08-14 | 2022-06-07 | PlayNitride Display Co., Ltd. | Adhesion device, micro device optical inspection and repairing equipment and optical inspection and repairing method |
| US11668742B2 (en) | 2019-08-14 | 2023-06-06 | PlayNitride Display Co., Ltd. | Injection device, micro light emitting diode inspection and repairing equipment and inspection and repairing method |
| CN112786753A (en) * | 2019-11-11 | 2021-05-11 | 厦门市三安光电科技有限公司 | LED chip and manufacturing method |
| CN112809204A (en) * | 2021-02-04 | 2021-05-18 | 厦门大学 | Laser cutting decarbonization device and method for polyimide cover film |
| CN112809204B (en) * | 2021-02-04 | 2022-04-19 | 厦门大学 | Laser cutting decarbonization device and method for polyimide cover film |
| CN113421950A (en) * | 2021-06-21 | 2021-09-21 | 安徽华晟新能源科技有限公司 | Method for manufacturing solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201820438A (en) | 2018-06-01 |
| JP2018078249A (en) | 2018-05-17 |
| KR20180053246A (en) | 2018-05-21 |
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