CN103367250A - Segmenting method of device wafer - Google Patents
Segmenting method of device wafer Download PDFInfo
- Publication number
- CN103367250A CN103367250A CN2013100961822A CN201310096182A CN103367250A CN 103367250 A CN103367250 A CN 103367250A CN 2013100961822 A CN2013100961822 A CN 2013100961822A CN 201310096182 A CN201310096182 A CN 201310096182A CN 103367250 A CN103367250 A CN 103367250A
- Authority
- CN
- China
- Prior art keywords
- device wafer
- modified layer
- mentioned
- diaphragm
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Abstract
The invention provides a segmenting method of device wafers. When a device wafer which has a modified layer inside is segmented into multiple devices with the modified layer as a starting point through expanding an extender panel, the quality of the device can be reduced and possibility of obstacles in subsequent processes can be reduced. After a adhering step of adhering the extender panel onto the back (1b) of the device wafer (1) and a modified layer forming step that the modified layer (1c) is formed inside the device wafer by irradiating laser beams (L) having transmission wavelengths along a segmentation predetermined line (2), a segmenting step that the device wafer is segmented into devices (3) one by one taking the modified layer as a starting point through expanding the extender panel (11) is executed. In the segmenting method, a protective film covering step is carried out to cover the surface (1a) of the device wafer with a hydrosoluble protective film (5) before the segmenting step, and a protective film removing step in which the protective film is removed by cleaning after the segmenting step.
Description
Technical field
The present invention relates to cutting apart the dividing method that each zone that preset lines marks off is formed with the device wafer of device with many that intersect.
Background technology
To make by such technique such as semiconductor device: cut apart preset lines marks off a plurality of rectangles in the wafer surface that is made of semiconductors such as silicon or GaAs device area by cancellate, has the circuit by IC(Integrated in these device areas formation, integrated circuit) or LSI(Large Scale Integration, large scale integrated circuit) etc. the device of the electronic circuit that consists of, next, the back side of having implemented the grinding wafer take with the wafer thinning after the predetermined processing such as predetermined thickness, wafer is divided into one by one device.Cutting apart this device wafer generally is the method for cutting off device wafer with cutting blade, but in recent years also adopted such laser processing: device wafer irradiation is had the laser beam of radioparent wavelength and after inside has formed modified layer, cuts off device wafer take modified layer as starting point and cut apart (patent documentation 1 etc.) thereby device wafer is applied external force.
The prior art document
Patent documentation 1: TOHKEMY 2009-277778 communique
Summary of the invention
Yet, when having cut apart device wafer as mentioned above, the situation that produces minute cuttings from divisional plane is arranged, when this minute cuttings be attached to device, device quality is reduced, and cause following problem: in the welding of subsequent handling (bonding, in conjunction with) or pack in (packaging) and bring obstacle.
The present invention is the invention of making in view of above-mentioned thing, its major technique problem provides a kind of dividing method, when the device wafer that inside is formed with modified layer by expansion extension sheet is divided into a plurality of device take modified layer as starting point, can reduces device quality and reduce and reduce the possibility of bringing obstacle to subsequent handling.
The dividing method of device wafer of the present invention is to cut apart the dividing method that each zone that preset lines marks off is formed with the device wafer of device with many that intersect, and it is characterized in that having: paste step, the back side of device wafer is pasted on the extension sheet; Modified layer forms step, before implementing this stickup step or after implementing this stickup step, the preset lines of cutting apart along device wafer is shone the laser beam that has radioparent wavelength with respect to device wafer to device wafer, forms at device wafer and cuts apart the modified layer of preset lines along this; And segmentation procedure, after having implemented above-mentioned stickup step and above-mentioned modified layer formation step, the above-mentioned extension sheet that is pasted with device wafer by expansion comes device wafer is applied external force, thereby cut apart device wafer take above-mentioned modified layer as starting point along the above-mentioned preset lines of cutting apart, the dividing method of above-mentioned device wafer also has: diaphragm covers step, at least on the implementation before stating segmentation procedure, with the surface of water miscible diaphragm covering device wafer; And diaphragm removal step, after having implemented above-mentioned segmentation procedure, remove said protection film by cleaning.
Among the present invention, before implementing segmentation procedure, cover the surface of coming the covering device wafer in the step with water miscible diaphragm at diaphragm, then, cut apart device wafer by segmentation procedure.Therefore, minute cuttings that produce in segmentation procedure are attached to diaphragm, remove step by the diaphragm of back, and minute cuttings are removed with diaphragm.Therefore, can reduce the reduction of device quality and minimizing brings obstacle to subsequent handling possibility.
According to the present invention, effect with the dividing method that provides following: when the device wafer that inside is formed with modified layer by expansion extension sheet is divided into a plurality of device take modified layer as starting point, can reduces the reduction of device quality and reduce the possibility of bringing obstacle to subsequent handling.
Description of drawings
Fig. 1 is the stereogram of stickup step of the dividing method of expression an embodiment of the present invention.
Fig. 2 is illustrated in the above-mentioned stickup step cutaway view of state that the back side with device wafer pastes the extension sheet of tape frame.
Fig. 3 is the overall perspective view that the modified layer of the expression dividing method that is suitable for implementing an execution mode forms the laser processing device of step.
Fig. 4 is that the end view that above-mentioned modified layer forms the state of step is carried out in expression.
Fig. 5 is the cutaway view that the above-mentioned modified layer of expression forms the details of step.
Fig. 6 diaphragm that to be expression carry out the dividing method of an execution mode by membrane formation device covers the end view of the state of step.
Fig. 7 be expression by said protection film cover step in the surface coverage of device wafer the cutaway view of state of diaphragm.
Fig. 8 is the cutaway view of segmentation procedure of the dividing method of expression one execution mode, before (a) device wafer is cut apart in expression, after (b) device wafer is cut apart in expression.
Fig. 9 diaphragm that to be expression carry out the dividing method of an execution mode by membrane formation device is removed the end view of the state of step.
Figure 10 be expression by above-mentioned protection removal film step from the surface removal of device the cutaway view of state of diaphragm.
Label declaration
1 device wafer
The surface of 1a device wafer
The back side of 1b device wafer
The 1c modified layer
2 cut apart preset lines
3 devices (device area)
5 diaphragms
11 extension sheets
The L laser beam
Embodiment
Below, come one embodiment of the present invention is described with reference to accompanying drawing.
(1) device wafer
The label 1 of Fig. 1 and Fig. 2 is illustrated in divided discoideus device wafer in the dividing method of an execution mode.This device wafer 1 be take thickness as such as the semi-conducting material about hundreds of μ m (silicon or GaAs etc.) as substrate, cut apart preset lines 2 marks off a plurality of rectangles at the surperficial 1a of this device wafer 1 device area 3 by cancellate.And in each device area 3, be formed with the electronic circuit that is consisted of by IC or LSI etc.Below will be formed with the device area 3 of electronics electronic circuit referred to as device 3 in the explanation.Present embodiment is to cut apart device wafer 1 along cutting apart preset lines 2, obtains the one by one method of device 3, carries out according to following step order.
At first, as depicted in figs. 1 and 2, the back side and the extension sheet 11 that is pasted on ring-shaped frame 10 of device wafer 1 are pasted, device wafer 1 becomes the state (stickup step) of exposing surface 1a.Extension sheet (expand sheet) the 11st, the one side that has basic materials such as synthetic resin sheet of retractility at polyvinyl chloride or polyolefin etc. is formed with the sheet of resinous adhesion coating, and framework 10 is to have the framework that the metallic plate of rigidity consists of by corrosion resistant plate etc.Extension sheet 11 is adapted to the space that covers framework 10 inboards, and is pasted on the one side (single face) of framework 10 through adhesion coating.The back side 1b of device wafer 1 consists of the adhesion coating that concentric mode is pasted on extension sheet 11 with device wafer 1 and framework 10.When conveyance etc. across framework 10 and extension sheet 11 processing apparatus wafers 1.
Next, after above-mentioned stickup step, along the laser beam of cutting apart 2 pairs of device wafers of preset lines 1 irradiation and have radioparent wavelength, in device wafer 1 interior formation along the modified layer of cutting apart preset lines 2 (modified layer formation step).Modified layer forms step and can be undertaken by laser processing device shown in Figure 3 20, below, laser processing device 20 is described.
(2) laser processing device
XY travelling table 22 by X-axis pedestal 30 and the constituting of Y-axis pedestal 40, described X-axis pedestal 30 can be arranged on the X-direction on the base station 21 freely movably, and described Y-axis pedestal 40 can be arranged on this X-axis pedestal 30 on the Y direction freely movably.X-axis pedestal 30 can be installed on the guide rail 31 of pair of parallel freely slidably, by the X-axis driving mechanism 34 that makes ball-screw (ball screw) 33 work with motor 32 X-axis pedestal 30 is moved in X-direction, the guide rail 31 of described pair of parallel is fixed on the base station 21 and in X-direction and extends.On the other hand, Y-axis pedestal 40 can be installed on the guide rail 41 of pair of parallel freely slidably, by the Y-axis driving mechanism 44 that makes ball-screw 43 work with motor 42 Y-axis pedestal 40 is moved in Y direction, the guide rail 41 of above-mentioned pair of parallel is fixed on the X-axis pedestal 30 and in Y direction and extends.
Chuck pedestal 50 cylindraceous is supported on the upper surface of Y-axis pedestal 40, and can freely rotate take Z-direction (above-below direction) as rotating shaft, and chuck table 51 concentric shape ground are fixed on this chuck pedestal 50.Chuck table 51 is the general well-known vacuum type chuck tables by vacuum attraction effect absorption retainer member wafer 1.Chuck table 51 by not shown rotary actuation member by with chuck pedestal 50 rotary actuation integratedly.Be equipped with a pair of binding clasp 52 in position disconnected from each other 180 ° around chuck table 51, this a pair of binding clasp 52 can keep said frame 10 freely with loading and unloading.This binding clasp 52 is installed on chuck pedestal 50 through guy (stay) (with reference to Fig. 4) 53.
In XY travelling table 22, X-axis pedestal 30 is the processing feeding of cutting apart preset lines 2 irradiating laser light beams along device wafer 1 when X-direction moves.And, move in Y direction by Y-axis pedestal 40, switch the index feed of the Object Segmentation preset lines 2 of irradiating laser light beam.In addition, processing direction of feed and index feed direction also can be set as on the contrary, that is, Y direction is the processing direction of feed, and X-direction is the index feed direction, and is unqualified.
Ear Mucosa Treated by He Ne Laser Irradiation member 60 has the rectangular-shaped housing 61 that extends along Y direction towards the top of chuck table 51, is provided with above-mentioned irradiation section 62 at the end of this housing 61.Housing 61 is being arranged at post 23 along the mode that vertical direction (Z-direction) moves up and down, and these post 23 vertical base stations 21 of being located at move up and down housing 61 by the not shown up and down drive member that is accommodated in the post 23.
Take in the housing 61 of Ear Mucosa Treated by He Ne Laser Irradiation member 60: (the omitting diagram) such as output adjustment units that the vibration that is made of YAG or YVO isopulse laser goes out the laser oscillation unit of laser beam and is used for adjusting the output of this laser beam, shine towards the below from irradiation section 62 by this laser oscillation unit laser beam that vibrates.
Near the irradiation section 62 of the end of housing 61, be fixed with the correction of cutting apart preset lines 2 (alignment) member 70 for detection of device wafer 1.Correction component 70 has for the camera 71 of taking device wafer 1, and correction component 70 detects (correction) according to the image that obtains with camera 71 cuts apart preset lines 2.
(3) formation of modified layer
More than be the structure of laser processing device 20, utilize this laser processing device 20 to form modified layer in the inside of device wafer 1 as described below.
At first, device wafer 1 is loaded into the chuck table 51 of laser processing device 20 through extension sheet 11, and utilizes vacuum attraction effect absorption to remain in chuck table 51.Device wafer 1 is remaining on the chuck table 51 under the state that exposes back side 1b.In addition, keep framework 10 by binding clasp 52.
Then, after detecting the position of cutting apart preset lines 2 by correction component 70, as shown in Figure 4 and Figure 5, for device wafer 1, make the focal point of laser beam L navigate to the inside of device wafer 1 and along detected predetermined cut-off rule 2 laser beam L is scanned from the irradiation section 62 of Ear Mucosa Treated by He Ne Laser Irradiation member 60.
Laser beam L is the pulse laser that has radioparent wavelength with respect to device wafer 1, for example, is the laser beam of following condition.
Wavelength: 1064nm pulse laser
Repetition rate: 100kHz
Average output: 1.5W
As shown in Figure 5, the laser beam L during laser processing is from surperficial 1a incident and be concentrated in the device wafer 1, thus, is formed with along the modified layer 1c of cutting apart preset lines 2 in the inside of device wafer 1.Modified layer 1c is formed at position apart from the surperficial 1a certain depth of device wafer 1 with certain bed thickness.Modified layer 1c has than the low characteristic of other part intensity in the device wafer 1.
Cut apart preset lines 2 by making chuck table 51 rotate next the setting abreast with the processing feeding, and the processing feeding that chuck table 51 is moved in X-direction utilizes laser processing device 20 to carry out the scanning of laser beam along cutting apart preset lines 2.The moving direction of chuck table 51 when the arrow B of Fig. 4 is laser processing, irradiation section 62 relatively processes feeding in the arrow A direction thereupon.At this moment processing feed speed for example is about 400mm/s.In addition, cut apart preset lines 2 by what the index feed that chuck table 51 is moved in Y direction switched the irradiating laser light beam.Thus, in device wafer 1, be formed with along all modified layer 1c of cutting apart preset lines 2.
By the modified layer formation step of above end for device wafer 1; then device wafer 1 is taken out of from laser processing device 20, by the surperficial 1a(diaphragm covering step of the water miscible diaphragm covering device of membrane formation device shown in Figure 6 80 usefulness wafer 1).Below, membrane formation device 80 is described.
(4) membrane formation device
(5) formation of diaphragm
Cover in the step at diaphragm, through extension sheet 11 device wafer 1 is remained on the rotary table 82, make rotary table 82 rotary actuations, keep framework 10 with centrifugal binding clasp 86.Then, from the resin supply port 831 of the resin supply nozzle 83 resin P that drips to the center of the surperficial 1a of the device wafer 1 of autorotation.The effect rotary coating that the resin P that drips to surperficial 1a passes through centrifugal force is formed with the diaphragm 5 that resin P as shown in Figure 7 makes in whole of surperficial 1a.In addition, when carrying out diaphragm covering step, cleaning solution supplying nozzle 87 is kept out of the way near the inner peripheral surface of housing body 811.
As the water-soluble resin P that uses in order to form diaphragm 5; preferred polyvinyl alcohol (the polyvinyl alcohol that uses; PVA), polyethylene glycol (polyethylene glycol; PEG), the water-soluble coating (resist) such as polyethylene glycol oxide (polyethylene oxide, PEO).
After the surperficial 1a of device wafer 1 has formed the diaphragm 5 of predetermined thickness (for example count about μ m), finish diaphragm and cover step, from membrane formation device 80 device wafer 1 of moving.Then, expand extension sheet 11 by expanding unit shown in Figure 8 90, device wafer 1 is applied external force, cut apart device wafer 1(segmentation procedure take modified layer 1c as starting point along predetermined cut-off rule 2).Below, the dividing method of the device wafer 1 in the segmentation procedure is described.
(6) device wafer cuts apart
Expanding unit 90 has for the loading drum cylindraceous (drum) 91 that loads device wafer 1.Load drum 91 around with these loadings drum 91 concentric shapes be equipped with the holding table 92 of ring-type, holding table 92 be provided with a plurality of from above press the movable binding clasp 93 of maintenance framework 10.And, holding table 92 for be supported for by a plurality of cylinders (air cylinder) 94 can lifting structure.
Shown in Fig. 8 (a), in segmentation procedure, through extension sheet 11 device wafer 1 is loaded on the loading drum 91 of expanding unit 90, and framework 10 is loaded on the holding table 92 of rising, and keep framework 10 by movable binding clasp 93 from pressing.Under this arrangement state, extension sheet 11 and device wafer 1 are levels, next, shown in Fig. 8 (b), by cylinder 94 holding table 92 are descended.So the extension sheet 11 on the holding table 92 cuts off the device wafer 1 that sticks on the extension sheet 11 to the expansion of radiation direction take the modified layer 1c that is formed in the device wafer 1 as starting point.Device wafer 1 is split into a plurality of devices 3 of shaped like chips thus.
(7) removal of diaphragm
Removing in the step at diaphragm, as shown in Figure 9, is that the device wafer 1 that is pasted on the state of extension sheet 11 is placed in membrane formation device 80 again with a plurality of devices 3 that are partitioned into, and supplies with cleaning fluid W to the surface of device wafer 1.
When supplying with cleaning fluid W, resin supply nozzle 83 is kept out of the way near the inner peripheral surface of housing body 811, and make 87 revolutions of cleaning solution supplying nozzle cleaning solution supplying mouth 871 is navigated to rotary table 82 the center directly over.Then, on one side make rotary table 82 rotation on one side from the cleaning solution supplying mouth 871 cleaning fluid W that spues.Cleaning fluid W is supplied to the center of the device wafer 1 of autorotation, and is dispersed throughout the whole surface of device wafer 1 by centrifugal force, and water miscible diaphragm 5 is cleaned liquid W fusing and removes.Perhaps, while can also make cleaning solution supplying nozzle 87 reciprocating rotatings supply with cleaning fluid W, at this moment owing to cleaning fluid W is supplied with on direct whole surface to device wafer 1, so can efficiently remove diaphragm 5.Thus, remove as shown in figure 10 the diaphragm 5 on the surface that covers each device 3.
From the surface removal of each device 3 behind the diaphragm 5, finish diaphragm and remove step.Then, transfer to from extension sheet 11 peel off singly device 3 and pick up pick up step.
It more than is the dividing method of present embodiment; according to present embodiment; before implementing segmentation procedure, cover the surperficial 1a that comes covering device wafer 1 in the step with water miscible diaphragm 5 at diaphragm, then, by segmentation procedure device wafer 1 is divided into a plurality of devices 3.In segmentation procedure, have the situation that produces minute cuttings from the plane of disruption of the device 3 that is partitioned into, and this minute cuttings in the situation that does not have diaphragm 5 owing to device wafer 1 moves or produce the surperficial 1a that static is attached to device wafer 1.But, as described in present embodiment, if at the surperficial 1a covered with protective film 5 of device wafer 1, then divide cuttings to be attached on the diaphragm 5.Then, remove step by diaphragm and remove diaphragm 5, minute cuttings that are attached to thus on the diaphragm 5 are removed with diaphragm 5.Therefore, the quality that can reduce the device 3 after picking up is subjected to the impact of minute cuttings and reduces such unfavorable condition, and can reduce the possibility of bringing obstacle to subsequent handling.
In addition; in the above-described embodiment; carry out each step of the present invention by the order of pasting step, modified layer formation step, diaphragm covering step, segmentation procedure and diaphragm removal step; but the order of pasting in the present invention step and modified layer formation step is arbitrarily, also can paste step on the contrary after modified layer forms step with above-mentioned execution mode.In addition, diaphragm covers step also can be before or after the stickup step, and perhaps modified layer is implemented before forming step, but preferably implements before being about to begin segmentation procedure.
Claims (1)
1. the dividing method of a device wafer is to cut apart the dividing method that each zone that preset lines marks off is formed with the device wafer of device with many that intersect, and it is characterized in that having:
Paste step, the back side of device wafer is pasted on the extension sheet;
Modified layer forms step, before implementing this stickup step or after implementing this stickup step, the preset lines of cutting apart along device wafer is shone the laser beam that has radioparent wavelength with respect to device wafer to device wafer, forms at device wafer and cuts apart the modified layer of preset lines along this; And
Segmentation procedure, after having implemented above-mentioned stickup step and above-mentioned modified layer formation step, the above-mentioned extension sheet that is pasted with device wafer by expansion comes device wafer is applied external force, thereby cuts apart device wafer take above-mentioned modified layer as starting point along the above-mentioned preset lines of cutting apart
The dividing method of above-mentioned device wafer also has:
Diaphragm covers step, state segmentation procedure at least on the implementation before, with the surface of water miscible diaphragm covering device wafer; And
Diaphragm is removed step, after having implemented above-mentioned segmentation procedure, removes said protection film by cleaning.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012076274A JP2013207170A (en) | 2012-03-29 | 2012-03-29 | Method for dividing device wafer |
| JP2012-076274 | 2012-03-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103367250A true CN103367250A (en) | 2013-10-23 |
Family
ID=49368314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013100961822A Pending CN103367250A (en) | 2012-03-29 | 2013-03-25 | Segmenting method of device wafer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2013207170A (en) |
| KR (1) | KR20130111292A (en) |
| CN (1) | CN103367250A (en) |
| TW (1) | TW201347018A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752570A (en) * | 2013-12-31 | 2015-07-01 | 晶能光电（江西）有限公司 | LED chip cutting method |
| CN105226018A (en) * | 2014-06-27 | 2016-01-06 | 株式会社迪思科 | Band extension fixture |
| CN105304561A (en) * | 2014-06-12 | 2016-02-03 | 株式会社迪思科 | Wafer processing method |
| CN105702628A (en) * | 2014-12-15 | 2016-06-22 | 株式会社迪思科 | Wafer processing method |
| CN106629582A (en) * | 2017-01-19 | 2017-05-10 | 烟台睿创微纳技术股份有限公司 | MEMS (Micro-Electro-Mechanical System) cutting and cleaning as well as releasing method of wafer |
| CN107039260A (en) * | 2015-11-05 | 2017-08-11 | 株式会社迪思科 | The processing method of chip |
| CN110788499A (en) * | 2018-08-02 | 2020-02-14 | 株式会社迪思科 | Method for processing wafer |
| CN114346474A (en) * | 2022-01-17 | 2022-04-15 | 深圳市陆芯半导体有限公司 | Full-automatic laser wafer cutting device and cutting method |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10008397B2 (en) * | 2014-09-05 | 2018-06-26 | Nexperia B.V. | Pneumatic wafer expansion |
| TWI666725B (en) * | 2014-11-14 | 2019-07-21 | 特銓股份有限公司 | Substrate stage mechanism |
| KR20160057966A (en) * | 2014-11-14 | 2016-05-24 | 가부시끼가이샤 도시바 | Processing apparatus, nozzle and dicing apparatus |
| CN104625416B (en) * | 2014-12-29 | 2016-06-22 | 北京理工大学 | Based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method |
| JP2018113395A (en) * | 2017-01-13 | 2018-07-19 | 株式会社ディスコ | Wafer processing method |
| US10363629B2 (en) * | 2017-06-01 | 2019-07-30 | Applied Materials, Inc. | Mitigation of particle contamination for wafer dicing processes |
| KR102563929B1 (en) | 2018-03-09 | 2023-08-04 | 삼성전자주식회사 | Method of singulating semiconductor die and method of fabricating semiconductor package |
| JP7241580B2 (en) * | 2019-03-26 | 2023-03-17 | 株式会社ディスコ | Wafer processing method |
| WO2023058481A1 (en) * | 2021-10-05 | 2023-04-13 | 日東電工株式会社 | Method for manufacturing electronic component device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034696A (en) * | 2009-10-01 | 2011-04-27 | 株式会社迪思科 | Workpiece dividing method |
| US20110226747A1 (en) * | 2010-03-16 | 2011-09-22 | Disco Corporation | Workpiece dividing method |
| CN102326250A (en) * | 2009-02-23 | 2012-01-18 | 住友电木株式会社 | Method for producing semiconductor wafer assembly, semiconductor wafer assembly, and semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004188475A (en) * | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | Laser machining method |
| JP2004322168A (en) * | 2003-04-25 | 2004-11-18 | Disco Abrasive Syst Ltd | Laser machining apparatus |
-
2012
- 2012-03-29 JP JP2012076274A patent/JP2013207170A/en active Pending
-
2013
- 2013-02-22 TW TW102106274A patent/TW201347018A/en unknown
- 2013-03-11 KR KR1020130025612A patent/KR20130111292A/en not_active Application Discontinuation
- 2013-03-25 CN CN2013100961822A patent/CN103367250A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102326250A (en) * | 2009-02-23 | 2012-01-18 | 住友电木株式会社 | Method for producing semiconductor wafer assembly, semiconductor wafer assembly, and semiconductor device |
| CN102034696A (en) * | 2009-10-01 | 2011-04-27 | 株式会社迪思科 | Workpiece dividing method |
| US20110226747A1 (en) * | 2010-03-16 | 2011-09-22 | Disco Corporation | Workpiece dividing method |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752570A (en) * | 2013-12-31 | 2015-07-01 | 晶能光电（江西）有限公司 | LED chip cutting method |
| CN104752570B (en) * | 2013-12-31 | 2017-10-31 | 晶能光电（江西）有限公司 | A kind of LED chip tangent method |
| CN105304561A (en) * | 2014-06-12 | 2016-02-03 | 株式会社迪思科 | Wafer processing method |
| CN105226018A (en) * | 2014-06-27 | 2016-01-06 | 株式会社迪思科 | Band extension fixture |
| CN105702628A (en) * | 2014-12-15 | 2016-06-22 | 株式会社迪思科 | Wafer processing method |
| CN107039260A (en) * | 2015-11-05 | 2017-08-11 | 株式会社迪思科 | The processing method of chip |
| CN107039260B (en) * | 2015-11-05 | 2021-10-15 | 株式会社迪思科 | Method for processing wafer |
| CN106629582A (en) * | 2017-01-19 | 2017-05-10 | 烟台睿创微纳技术股份有限公司 | MEMS (Micro-Electro-Mechanical System) cutting and cleaning as well as releasing method of wafer |
| CN110788499A (en) * | 2018-08-02 | 2020-02-14 | 株式会社迪思科 | Method for processing wafer |
| CN114346474A (en) * | 2022-01-17 | 2022-04-15 | 深圳市陆芯半导体有限公司 | Full-automatic laser wafer cutting device and cutting method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013207170A (en) | 2013-10-07 |
| TW201347018A (en) | 2013-11-16 |
| KR20130111292A (en) | 2013-10-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103367250A (en) | Segmenting method of device wafer | |
| JP6739873B2 (en) | Wafer processing method | |
| US6998571B2 (en) | Laser beam processing machine | |
| US7915140B2 (en) | Fabrication method for device having die attach film on the back side thereof | |
| KR102210945B1 (en) | Wafer processing method | |
| KR102272434B1 (en) | Wafer processing method | |
| CN106847747B (en) | Method for dividing wafer | |
| TWI392002B (en) | Laser processing device | |
| KR20160072775A (en) | Method of machining wafer | |
| JP5385060B2 (en) | Protective film coating method and protective film coating apparatus | |
| KR20140105375A (en) | Wafer machining method | |
| TWI411029B (en) | Laser processing device | |
| KR20150142597A (en) | Wafer machining method | |
| CN107026123A (en) | The processing method of chip | |
| US9698301B2 (en) | Wafer processing method | |
| TWI539502B (en) | Protective material and ablation processing method | |
| US9761442B2 (en) | Protective film forming method for forming a protective film on a wafer | |
| US20080293220A1 (en) | Wafer dividing method | |
| KR20150140215A (en) | Wafer machining method | |
| JP4777701B2 (en) | Method for separating adhesive film | |
| KR20170066251A (en) | Wafer processing method | |
| CN103658986B (en) | Laser processing device and protecting film covering method | |
| CN103358016A (en) | Laser processing method | |
| JP4666583B2 (en) | Protective coating method | |
| WO2007040032A1 (en) | Transfer device and transfer method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131023 |