CN108072613B - Optical detection device and detection method thereof - Google Patents
Optical detection device and detection method thereof Download PDFInfo
- Publication number
- CN108072613B CN108072613B CN201610992816.6A CN201610992816A CN108072613B CN 108072613 B CN108072613 B CN 108072613B CN 201610992816 A CN201610992816 A CN 201610992816A CN 108072613 B CN108072613 B CN 108072613B
- Authority
- CN
- China
- Prior art keywords
- light
- excitation
- light sensor
- reflected
- wavelength selective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N2021/1738—Optionally different kinds of measurements; Method being valid for different kinds of measurement
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention relates to an optical detection device and a detection method thereof. The light source is used for emitting an excitation light beam with the wavelength ranging from 200 nanometers to 300 nanometers. The beam directing structure directs an excitation beam to impinge on the thinned region of the sample such that the thinned region reflects the excitation beam, and the beam directing structure is adapted to receive the excitation beam reflected by the thinned region. The beam guide structure is used for guiding the excitation beam reflected by the thinned area to the first light sensor, and the first light sensor receives the excitation beam reflected by the thinned area to generate a first detection signal. The processor is electrically coupled to the first light sensor to process the first detection signal. The method and the device can meet the detection requirement of the current small-scale semiconductor assembly.
Description
Technical Field
The invention relates to an optical detection device and a detection method thereof.
Background
In order to increase the yield of semiconductor process, product testing is required to be performed independently. For example, an optical scanning microscope (LSM), such as a laser scanning microscope (laser scanning microscope, LSM), may be used in combination with a Solid Immersion Lens (SIL) to acquire an image of a region to be inspected of a semiconductor device, so as to determine the manufacturing quality of the semiconductor device. Generally, the optical scanning microscope uses a detection beam having a visible wavelength or an infrared wavelength to detect an area to be detected of the semiconductor device. However, as the size of integrated circuits is reduced, the resolution of optical scanning microscopes using the above-mentioned detection beam for detection is increasingly inadequate for detecting today's mainstream scale integrated circuits. For example, the line width of the mainstream integrated circuit is about 10 nm to 50 nm, but the resolution limit of the optical scanning microscope using the detection light beams of visible light wavelength and infrared light wavelength is about 100 nm and 180 nm, respectively, which obviously hardly meets the detection requirement of the current semiconductor device.
Disclosure of Invention
The embodiment of the invention provides an optical detection device which is suitable for detecting a sample, and the sample is provided with a thinned area. The optical detection device includes a light source, a beam directing structure, a first light sensor, and a processor. The light source is used for emitting an excitation light beam with the wavelength ranging from 200 nanometers to 300 nanometers. The beam guide structure is configured on the transmission path of the excitation beam. The beam guiding structure guides the excitation beam to irradiate on the thinning area so that the thinning area reflects the excitation beam, and the beam guiding structure is suitable for receiving the excitation beam reflected by the thinning area. The first light sensor is arranged on a transmission path of the excitation light beam reflected by the thinned area. The beam guide structure is used for guiding the excitation beam reflected by the thinned area to the first light sensor, and the first light sensor receives the excitation beam reflected by the thinned area to generate a first detection signal. The processor is electrically coupled to the first light sensor to process the first detection signal.
Other embodiments of the present invention provide an optical inspection apparatus suitable for inspecting a sample having a thinned region. The optical detection device includes a light source, a beam directing structure, a first light sensor, a second light sensor, and a processor. The light source is used for emitting an excitation light beam with the wavelength ranging from 200 nanometers to 300 nanometers. The beam guide structure is configured on the transmission path of the excitation beam. The beam guide structure guides the excitation beam to irradiate on the thinned area so that the thinned area reflects the excitation beam to form an image beam, and the excitation beam excites the sample to generate secondary light. The beam guiding structure is adapted to receive the image beam and the secondary light. The first light sensor is configured on a transmission path of the image light beam. The light beam guiding structure is used for guiding the image light beam to the first light sensor, and the first light sensor receives the image light beam to generate a first detection signal. The second light sensor is configured on the transmission path of the secondary light. The light beam guiding structure is used for guiding the secondary light to the second light sensor, and the second light sensor receives the secondary light to generate a second detection signal. The processor electrically couples the first light sensor and the second light sensor to process the first detection signal and the second detection signal.
Other embodiments of the present invention provide an optical inspection method suitable for inspecting a sample having thinned regions. The optical detection method comprises the following steps: emitting an excitation light beam with a wavelength between 200 nm and 300 nm; guiding an excitation beam through a beam guide structure to irradiate on the thinned region so that the thinned region reflects the excitation beam; guiding the excitation light beam reflected by the thinned area to a first light sensor through a light beam guide structure to receive the excitation light beam reflected by the thinned area to generate a first detection signal; and processing the first detection signal.
Drawings
Various aspects of the invention are best understood from the following detailed description when read with the accompanying drawing figures. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
Fig. 1 is a schematic optical path diagram of an optical detection apparatus according to an embodiment of the present invention.
Fig. 2 shows a schematic view of the sample of fig. 1 with thinned regions.
Fig. 3 is a schematic diagram of an optical path of an optical detection apparatus according to another embodiment of the present invention.
FIG. 4 is a flow chart illustrating steps of an optical inspection method according to an embodiment of the present invention.
The reference numbers illustrate:
50: a sample;
50 a: thinning the area;
52: a back side;
54: a sample structure to be detected;
100. 300, and (2) 300: an optical detection device;
110: a light source;
120: a beam directing structure;
121: a scanning reflector;
122: a polarization beam splitting component;
123: a phase delay component;
124: a first wavelength selective component;
125: a second wavelength selective component;
126. 127, 128, 129: a lens;
130: a first light sensor;
140: a processor;
150. 350: a second light sensor;
160: a multiplexer;
170: a detection platform;
180: a circuit board;
DS 1: a first detection signal;
DS 2: a second detection signal;
EB: an excitation light beam;
IB: an image beam;
s410, S420, S430, S440: a step of an optical detection method;
SIL: a solid immersion lens;
SR, SR1, SR 2: secondary light rays;
t1, T2: and (4) thickness.
Detailed Description
The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, forming a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Furthermore, for ease of description, spatially relative terms such as "below", "lower", "above", "upper", and the like may be used herein to describe one element or feature's relationship to another element or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may have other orientations (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly as such.
Fig. 1 is a schematic optical path diagram of an optical detection apparatus according to an embodiment of the present invention. Referring to fig. 1, in the present embodiment, an optical detection apparatus 100 includes a light source 110, a light beam guiding structure 120, a first light sensor 130, and a processor 140. The light source 110 is configured to emit an excitation beam EB with a wavelength between 200 nm and 300 nm, and the beam guiding structure 120 is disposed on a transmission path of the excitation beam EB. In particular, the optical detection device 100 is adapted to detect the sample 50. The beam guiding structure 120 is used to guide the excitation beam EB to the sample 50, and the beam guiding structure 120 is also used to guide the excitation beam EB reflected by the sample 50 to the first photosensor 130. In addition, the processor 140 is electrically coupled to the first photosensor 130 to process a detection signal from the first photosensor 130 with respect to the excitation beam EB to enable detection of the sample 50. In the present embodiment, the optical detection device 100 is, for example, but not limited to, a Laser Scanning Microscope (LSM), and is suitable for obtaining an image of the sample 50. The light source 110 is, for example, a laser light source, and the excitation beam EB is, for example, but not limited to, a Continuous wave laser (CW laser) beam or a Pulsed laser (Pulsed laser) beam. In some embodiments, the wavelength range of the excitation beam EB is not limited to the above-mentioned wavelength range, and the wavelength range of the excitation beam EB may be, for example, other ultraviolet wavelength ranges or other wavelength ranges.
Fig. 2 shows a schematic view of the sample of fig. 1 with thinned regions. Referring to fig. 2, in the present embodiment, the back surface 52 of the sample 50 faces the excitation beam EB, and the excitation beam EB guided by the beam guiding structure 120 scans the sample 50 through the back surface 52 to obtain an image of the sample structure 54 to be detected. In detail, the sample 50 is, for example but not limited to, a semiconductor package or other kind of semiconductor component, and the sample structure 54 to be detected is, for example but not limited to, a semiconductor structure. In order to improve the resolution of the acquired image, the sample 50 is scanned with a shorter wavelength excitation beam EB. However, if the sample 50 is a semiconductor device having a high absorption rate for the shorter-wavelength excitation beam EB, the shorter-wavelength excitation beam EB hardly penetrates through the sample 50 due to the excessively thick thickness of the sample 50. Therefore, in the present embodiment, the sample 50 may have a thinned area 50a with a reduced thickness, for example, and the thinned area 50a is located on the back surface 52 of the sample 50. The reduced thickness of the thinned region 50a of the sample 50 allows the shorter wavelength excitation beam EB to easily penetrate the sample 50 for efficient detection. In detail, the thinned region 50a of the sample 50 may be reduced in thickness by, for example, grinding, and the thickness T2 of the thinned region 50a of the sample 50 after the thickness reduction is smaller than the initial thickness T1 of the sample 50. For example, the initial thickness T1 of the sample 50 may be, for example, 5 microns, and the thickness T2 of the sample 50 after the thickness reduction is, for example, less than 1 micron, for example, less than 500 nanometers, which is not intended to limit the invention.
With continuing reference to fig. 1 and with simultaneous reference to fig. 2, in the present embodiment, the beam guiding structure 120 guides the excitation beam EB to irradiate the thinned area 50a of the sample 50 so that the thinned area 50a reflects the excitation beam EB. Specifically, the beam guiding structure 120 includes a scanning reflector 121, a polarization beam splitting assembly 122, a phase delay assembly 123, a lens 126, and a lens 129. The excitation beam EB emitted from the light source 110 has a linear polarization direction, for example, and the linear polarization direction is perpendicular to the traveling direction of the excitation beam EB. The excitation beam EB passes through the lens 126 and then passes to the scanning reflector 121. The scanning reflector 121 is, for example but not limited to, a scanning mirror (scanning mirror), and can reflect the excitation beam EB and adjust the reflection direction of the excitation beam EB by rotating and adjusting the reflection surface. In detail, in the present embodiment, the scanning reflector 121 is used to adjust the position where the excitation beam EB is transmitted to the thinned region 50a of the sample 50. In addition, for example, the scanning reflector 121 is a Galvanometer Scanning Mirror (GSM), and the reflecting surface thereof can be adjusted by rotating along an axial direction, but the invention is not limited thereto.
In the present embodiment, the excitation beam EB is reflected by the scanning reflector 121 and sequentially passes through the polarization beam splitter 122 and the phase delay element 123. Specifically, the Polarization beam splitter 122 is, for example, a Polarization Beam Splitter (PBS), and can pass a light beam having a specific Polarization direction and reflect a light beam having another specific Polarization direction. For example, the polarization beam splitter component 122 is, but not limited to, passing P-polarized light and reflecting S-polarized light. In addition, the phase delay element 123 is, for example, but not limited to, a Quarter Wave Plate (QWP). When the excitation beam EB passes through the phase delay element 123, the excitation beam EB generates a phase delay of a quarter wavelength. In the present embodiment, the polarization beam splitter 122 may pass the excitation light beam EB having the linear polarization direction. After the excitation beam EB passing through the polarization splitting assembly 122 passes through the phase delay assembly 123, the excitation beam EB may have a circular polarization state, for example.
In the present embodiment, the excitation beam EB passes through the polarization beam splitter 122 and the phase retardation device 123 sequentially and then passes through the lens 129 and the solid immersion lens SIL to be transmitted to the sample 50. The excitation beam EB is irradiated on the thinned region 50a of the sample 50 to cause the thinned region 50a to reflect the excitation beam EB to form the image beam IB. In detail, the solid immersion lens SIL can be attached to the flat surface of the thinned region 50a of the sample 50, so that the optical detection apparatus 100 can accurately detect the sample 50. In the present embodiment, the beam guiding structure 120 is adapted to receive the image beam IB (i.e., the excitation beam EB reflected by the thinned region 50 a), and the beam guiding structure 120 is used to guide the image beam IB to the first photosensor 130. Specifically, the image beam IB has the same or similar polarization state as the excitation beam EB after being emitted from the thinned region 50a of the sample 50. The image beam IB passes through the phase retardation element 123 and is transmitted to the polarization beam splitting element 122. At this time, the phase retardation element 123 causes the image beam IB to generate a phase retardation, for example, a quarter wavelength phase retardation, so that the image beam IB is converted from a circular polarization state to a linear polarization state, and the linear polarization direction of the image beam IB is perpendicular to the linear polarization direction of the excitation beam EB emitted from the light source 110. In the present embodiment, the first light sensor 130 is disposed on the transmission path of the image beam IB. After the image beam IB is transmitted to the polarization beam splitter 122, the polarization beam splitter 122 reflects the excitation beam EB and transmits the reflected excitation beam EB to the first light sensor 130.
In the present embodiment, the excitation beam EB irradiated to the thinned region 50a of the sample 50 also excites the sample 50 to generate the secondary light SR. Specifically, the secondary light SR is, for example, a secondary light SR generated by Photoluminescence (Photoluminescence) of the excitation beam EB, and the wavelength range of the secondary light SR may be, for example, a wavelength range of visible light or infrared light. In contrast, the wavelength range of the image beam IB is, for example, the same as the wavelength range of the excitation beam EB. In the present embodiment, the optical detection apparatus 100 further includes a second optical sensor 150 disposed on the transmission path of the secondary light SR, and the light beam guiding structure 120 is also used for guiding the secondary light SR to the second optical sensor 150.
In this embodiment, the beam directing structure 120 further comprises a first wavelength selective component 124 and a second wavelength selective component 125. The first wavelength selective element 124 is disposed on the transmission path of the image beam IB and also on the transmission path of the secondary light SR. The second wavelength selective element 125 is disposed between the scanning reflector 121 and the light source 110, and the first wavelength selective element 124 is disposed between the first optical sensor 130 and the second wavelength selective element 125. Specifically, the first wavelength selective member 124 and the second wavelength selective member 125 are, for example, dichroic members (dichroic members), and may reflect a light beam of a specific wavelength band while allowing light beams of other wavelength bands to pass therethrough, or allow a light beam of a specific wavelength band to pass therethrough while reflecting light beams of other wavelength bands. In the present embodiment, the secondary light SR passes through the phase retardation element 123 and is transmitted to the polarization beam splitting element 122. After passing through the phase retardation element 123, the secondary light SR generated by photoluminescence includes a first portion, i.e., a secondary light SR1, having a specific polarization direction and capable of being reflected by the polarization beam splitting element 122, and a second portion, i.e., a secondary light SR2, having another specific polarization direction and capable of passing through the polarization beam splitting element 122. Specifically, a portion of the secondary light SR (e.g., secondary light SR1) passing through the phase retardation assembly 123 is reflected by the polarization beam splitter assembly 122 and the remaining portion of the secondary light SR (e.g., secondary light SR2) passes through the polarization beam splitter assembly 122.
In the present embodiment, the first wavelength selective member 124 can reflect the ultraviolet wavelength range and allow other wavelength bands to pass through. Specifically, the reflected secondary light SR, i.e. secondary light SR1, passes through the first wavelength selective element 124 to the second light sensor 150. In addition, the image beam IB (i.e., the reflected excitation beam EB) is adapted to reflect off the first wavelength selective component 124 to pass to the first light sensor 130. In addition, the image beam IB and the secondary light SR1 can be adjusted in beam size or other optical properties by the lens 127 and the lens 128, respectively, so as to be received by the first light sensor 130 and the second light sensor 150.
In addition, in the present embodiment, the second wavelength selective element 125 can reflect the infrared light or visible light wavelength range, and allow the light beams in other bands to penetrate through. Therefore, the excitation beam EB emitted from the light source 110 is suitable to pass through the second wavelength selective element 125 to the scanning reflector 121, and the secondary light SR passing through the polarization beam splitting element 122, i.e. the secondary light SR2, is reflected on the second wavelength selective element 125. Specifically, the secondary light SR passing through the polarization beam splitting element 122, i.e. the secondary light SR2, is reflected by the scanning reflector 121, the second wavelength selective element 125 and the first wavelength selective element 124 in sequence and transmitted to the second light sensor 150. Therefore, the secondary light SR2 passing through the polarization beam splitting assembly 122 can also be guided to the second light sensor 150, and the secondary light SR can be effectively utilized, so that the second light sensor 150 receives the secondary light SR with higher light intensity, thereby improving the optical detection quality. In addition, specifically, the numbers and the arrangement positions of the lenses 126, 127, 128, 129 and the wavelength selective elements (such as the first wavelength selective element 124 and the second wavelength selective element 125) are only for illustration and are not intended to limit the present invention, and the numbers and the arrangement positions thereof can be adjusted according to different optical architectures of the optical detection apparatus 100.
In the present embodiment, the first photosensor 130 receives the excitation beam EB, i.e., the image beam IB, reflected by the thinned region 50a of the sample 50 to generate a first detection signal DS 1. In addition, the second photo sensor 150 receives the secondary light SR (including the secondary light SR1 and the secondary light SR2) to generate the second detection signal DS 2. The processor 140 is electrically coupled to the first photosensor 130 and the second photosensor 150 respectively to process the first detection signal DS1 and the second detection signal DS2 respectively. In particular, the processor 140 may visualize the sample structure 54 to be detected of the sample 50 in cooperation with the adjustment of the scanning reflector 121 based on the first detection signal DS1 and/or the second detection signal DS 2.
In general, when the sample 50 is optically detected by a detection beam with a shorter wavelength and a suitable optical path structure, the resolution of the image of the sample 50 obtained by the optical detection apparatus 100 is higher. In the present embodiment, the first light sensor 130 is, for example, an ultraviolet light sensor, and the detection frequency thereof is, for example, but not limited to, less than or equal to 1 GHz. In addition, the excitation beam EB for detecting the sample 50 has a wavelength between 200 nm and 300 nm, which falls within the wavelength range of the ultraviolet light. Therefore, the excitation beam EB having the wavelength of ultraviolet light can realize high-resolution optical detection by the guidance of the beam guiding structure 120, and can satisfy the detection requirements of today's small-scale semiconductor components. Specifically, the optical inspection apparatus 100 is matched with a solid immersion lens SIL having a high refractive index and a high light transmittance, and a material with a good heat conduction effect to perform the optical inspection. For example, when the sample 50 with the thinned region 50a and the Aperture value (NA) of the solid immersion lens SIL fall within 2.5 are matched with the excitation beam EB for detection, the resolution of the image of the sample 50 obtained by the optical detection apparatus 100 can reach 45 nm. This resolution is more than twice that of the detection beam at visible wavelengths and more than four times that of the detection beam at infrared wavelengths.
In addition, in the embodiment, in cooperation with the sample 50 having the thinned region 50a after the thickness reduction, such as Ultra Thin Silicon (UTS) with a thickness less than 500 nm, the image light beam IB received by the first light sensor 130 may have a stronger light intensity, so that the first detection signal DS1 generated by the first light sensor 130 has a stronger signal intensity. Therefore, the first detection Signal DS1 generated by the first photosensor 130 has a higher Signal-to-noise ratio (SNR), so that the image of the sample 50 generated according to the first detection Signal DS1 is clearer.
In addition, in the present embodiment, the second light sensor 150 is, for example, a visible light or/and infrared light sensor, and the detection frequency thereof is, for example, but not limited to, greater than or equal to 3 GHz. In some embodiments, the second light sensor 150 can receive the secondary light SR with a wavelength falling within a wavelength range of 500 nm to 1550 nm, and the detection frequency of the second light sensor 150 is greater than or equal to 12GHz, for example. The second optical sensor 150 may be coupled with a Lock-in Amplifier (Lock-in Amplifier) to scan the spectrum of the secondary light SR. Accordingly, the optical detection apparatus 100 can acquire an image of the sample 50 by receiving the secondary light SR and analyze the material composition of the sample 50. In detail, the optical detection apparatus 100 may detect a defect (defect) distribution on the sample structure 54 to be detected of the sample 50, for example, by receiving the secondary light SR.
Specifically, the optical detection apparatus 100 may selectively set the multiplexer 160. The first light sensor 130 and the second light sensor 150 are electrically coupled to the multiplexer 160, respectively, and the multiplexer 160 is electrically coupled to the processor 140. In this embodiment, the processor 140 can select to receive the first detection signal DS1 from the first light sensor 130 or the second detection signal DS2 from the second light sensor 150 through the multiplexer 160. Alternatively, the processor 140 may also receive the first detection signal DS1 and the second detection signal DS2 at the same time, which is not limited by the invention. In particular, the image of the sample 50 presented according to the first detection signal DS1 is of higher resolution. In addition, the second light sensor 150 has a high detection frequency, and its detection sensitivity is superior to that of the first light sensor 130. In the embodiment, the optical detection apparatus 100 may be used with the first optical sensor 130 and/or the second optical sensor 150 according to the image beam IB and/or the secondary light SR to detect the sample structure 54 of the sample 50 to be detected, which is not limited in the invention.
In the present embodiment, the optical inspection apparatus 100 further includes an inspection platform 170 and a circuit board 180, and the circuit board 180 is disposed on the inspection platform 170. The sample 50 is disposed on the circuit board 180 and electrically connected to the circuit board 180. In particular, the sample structure 54 of the sample 50 to be examined is, for example, a structure comprising an integrated circuit. The optical inspection device 100 can input a test signal into the sample structure 54 to be inspected through the circuit board 180, and the test signal can be, for example, a waveform having a periodicity. When the optical inspection apparatus 100 acquires an image of the sample 50, the image of the sample 50 will show the electrical characteristics of the sample structure 54 to be inspected after the test signal is input. For example, the optical inspection apparatus 100 can test the electrical characteristics of a specific transistor to show the electrical performance of the transistor, thereby inspecting the quality of the transistor.
Fig. 3 is a schematic diagram of an optical path of an optical detection apparatus according to another embodiment of the present invention. Referring to fig. 3, the optical inspection apparatus 300 of the embodiment of fig. 3 is similar to the optical inspection apparatus 100 of the embodiment of fig. 1. The components and related descriptions of the optical inspection apparatus 300 can refer to the components and related descriptions of the optical inspection apparatus 100, and are not repeated herein. The differences between the optical detection apparatus 300 and the optical detection apparatus 100 are as follows. In the present embodiment, the optical detection apparatus 300 includes a second light sensor 350, and the second light sensor 350 is, for example, a Spectrometer (Spectrometer) for directly receiving the secondary light SR and scanning a spectrum of the secondary light SR. In addition, in the present embodiment, the multiplexer 160 of the embodiment shown in fig. 1 can be selectively configured, so that the processor 140 selects to receive the first detection signal DS1 from the first light sensor 130 or the second detection signal DS2 from the second light sensor 350 through the multiplexer 160. In particular, the optical inspection apparatus 300 can also achieve high-resolution optical inspection, and can meet the inspection requirements of today's small-scale semiconductor devices.
FIG. 4 is a flow chart illustrating steps of an optical inspection method according to an embodiment of the present invention. Referring to fig. 4, in the present embodiment, the optical detection method can be applied to at least the optical detection apparatus 100 of fig. 1 and the optical detection apparatus 300 of fig. 3. In particular, the optical detection method is suitable for detecting a sample, and the sample has a thinned region. The optical detection method comprises the following steps. In step S410, an excitation beam with a wavelength between 200 nm and 300 nm is emitted. In step S420, the excitation beam is guided by the beam guiding structure to impinge on the thinned region such that the thinned region reflects the excitation beam. Next, in step S430, the excitation beam reflected by the thinned area is guided to the first light sensor by the beam guiding structure to receive the excitation beam reflected by the thinned area to generate a first detection signal. Thereafter, in step S440, the first detection signal is processed. Specifically, the optical detection method of the embodiment of the invention can be obtained from the description of the embodiments of fig. 1 to 3 with sufficient teaching, suggestion and implementation descriptions, and thus, the description is not repeated.
In summary, in the optical detection apparatus and the optical detection method according to the embodiments of the invention, the light source is configured to emit an excitation beam with a wavelength between 200 nm and 300 nm, and the beam guiding structure guides the excitation beam to irradiate on the thinned area of the sample so that the thinned area reflects the excitation beam. In addition, the beam guiding structure is adapted to receive the excitation beam reflected by the thinned region, and the beam guiding structure is configured to guide the excitation beam reflected by the thinned region to the first light sensor for optical detection of the thinned region of the sample. Therefore, the excitation light beam with ultraviolet wavelength can realize high-resolution optical detection through the guidance of the light beam guiding structure, and can meet the detection requirement of the small-scale semiconductor assembly at present.
The foregoing has outlined features of several embodiments so that those skilled in the art may better understand the various aspects of the present invention. Those skilled in the art should appreciate that they may readily use the present invention as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (7)
1. An optical inspection device adapted to inspect a sample, the sample having a thinned region, the optical inspection device comprising:
a light source for emitting an excitation beam having a wavelength of 200 nm to 300 nm;
a beam guiding structure disposed on a propagation path of the excitation beam, the beam guiding structure guiding the excitation beam to impinge on the thinning region so that the thinning region reflects the excitation beam, the beam guiding structure being adapted to receive the excitation beam reflected by the thinning region, wherein the beam guiding structure at least includes a phase delay element;
a first light sensor disposed on a transmission path of the excitation light beam reflected by the thinned region, wherein the beam guiding structure is configured to guide the excitation light beam reflected by the thinned region to the first light sensor, and the first light sensor receives the excitation light beam reflected by the thinned region to generate a first detection signal; and
a processor electrically coupled to the first light sensor to process the first detection signal,
wherein the beam guiding structure further comprises a scanning reflector and a polarization beam splitter, the excitation beam emitted from the light source is reflected by the scanning reflector and transmitted to the sample through the polarization beam splitter and the phase delay component in sequence, and is irradiated on the thinned region to make the thinned region reflect the excitation beam, wherein the excitation beam reflected by the thinned region is transmitted to the first light sensor through reflection on the polarization beam splitter after passing through the phase delay component,
the optical detection device further includes a second light sensor, wherein the excitation beam irradiated on the thinned region excites the sample to generate a secondary light, and the secondary light is transmitted to the polarization splitting assembly through the phase delay assembly, the second light sensor is disposed on a transmission path of the secondary light, and the beam guiding structure further includes a first wavelength selective assembly, a portion of the secondary light passing through the phase delay assembly is reflected on the polarization splitting assembly, and the rest of the secondary light passes through the polarization splitting assembly, the reflected secondary light is transmitted to the second light sensor through the first wavelength selective assembly, and the second light sensor receives the secondary light to generate a second detection signal, and the processor is electrically coupled to the second light sensor to process the second detection signal, wherein the excitation light beam reflected by the thinned region is adapted to be reflected on the first wavelength selective component to pass to the first light sensor,
wherein the light beam guiding structure further comprises a second wavelength selective element disposed between the scanning reflector and the light source, the first wavelength selective element is disposed between the first light sensor and the second wavelength selective element, and the excitation light beam emitted from the light source is suitable for being transmitted to the scanning reflector through the second wavelength selective element, and the secondary light beam passing through the polarization splitting element is transmitted to the second light sensor through the scanning reflector, the second wavelength selective element and the first wavelength selective element in sequence.
2. An optical inspection device according to claim 1, wherein the scanning reflector is used to adjust the position at which the excitation beam passes onto the thinned region.
3. The optical detection device of claim 1, wherein the excitation beam is a continuous laser beam or a pulsed laser beam.
4. An optical inspection device adapted to inspect a sample, the sample having a thinned region, the optical inspection device comprising:
a light source for emitting an excitation beam having a wavelength of 200 nm to 300 nm;
a beam guiding structure disposed on a transmission path of the excitation beam, the beam guiding structure guiding the excitation beam to irradiate on the thinned region so that the thinned region reflects the excitation beam to form an image beam, and the excitation beam excites the sample to generate a secondary light, wherein the beam guiding structure is adapted to receive the image beam and the secondary light;
a first light sensor disposed on a transmission path of the image beam, wherein the beam guiding structure is used for guiding the image beam to the first light sensor, and the first light sensor receives the image beam to generate a first detection signal;
the second light sensor is configured on a transmission path of the secondary light, the light beam guiding structure is used for guiding the secondary light to the second light sensor, and the second light sensor receives the secondary light to generate a second detection signal; and
a processor electrically coupled to the first light sensor and the second light sensor to process the first detection signal and the second detection signal,
wherein the beam guiding structure comprises a scanning reflector, a polarization beam splitter and a phase delay component, the excitation beam emitted by the light source is reflected by the scanning reflector and sequentially transmitted to the sample through the polarization beam splitter and the phase delay component, and is irradiated on the thinned area to enable the thinned area to reflect the excitation beam to form the image beam, wherein the image beam is transmitted to the first light sensor after being reflected on the polarization beam splitter after passing through the phase delay component,
wherein the secondary light is transmitted to the polarization beam splitting element through the phase retardation element, the beam guiding structure further comprises a first wavelength selective element, a portion of the secondary light passing through the phase retardation element is reflected on the polarization beam splitting element, and the rest of the secondary light passes through the polarization beam splitting element, the reflected secondary light is transmitted to the second light sensor through the first wavelength selective element, and the second light sensor receives the secondary light to generate a second detection signal, wherein the image beam reflected by the thinned region is adapted to be reflected on the first wavelength selective element and transmitted to the first light sensor,
wherein the light beam guiding structure further comprises a second wavelength selective element disposed between the scanning reflector and the light source, the first wavelength selective element is disposed between the first light sensor and the second wavelength selective element, and the excitation light beam emitted from the light source is suitable for being transmitted to the scanning reflector through the second wavelength selective element, and the secondary light beam passing through the polarization splitting element is transmitted to the second light sensor through the scanning reflector, the second wavelength selective element and the first wavelength selective element in sequence.
5. An optical inspection device according to claim 4, wherein the scanning reflector is used to adjust the position at which the excitation beam passes onto the thinned region.
6. An optical inspection method adapted for inspecting a sample, wherein the sample has a thinned region, the optical inspection method comprising:
emitting an excitation light beam with a wavelength between 200 nm and 300 nm;
guiding the excitation beam to irradiate on the thinned area by a beam guide structure so that the thinned area reflects the excitation beam and the excitation beam irradiating on the sample excites the sample to generate secondary light;
guiding the excitation beam reflected by the thinned region to a first light sensor by the beam guiding structure to receive the excitation beam reflected by the thinned region to generate a first detection signal;
guiding the secondary light to a second light sensor by the light beam guiding structure, so that the second light sensor receives the secondary light to generate a second detection signal; and
processing the first detection signal and the second detection signal,
wherein the method of guiding the excitation beam to impinge on the thinned region by the beam guiding structure such that the thinned region reflects the excitation beam further comprises:
after being reflected by the scanning reflector, the excitation light beam passes through a polarization beam splitting component and a phase delay component in sequence to be transmitted to the sample, and irradiates on the thinned area so that the excitation light beam is reflected by the thinned area; wherein the method of guiding the excitation beam reflected by the thinned region to the first light sensor by the beam guiding structure to receive the excitation beam reflected by the thinned region to generate the first detection signal further comprises:
transmitting the reflected excitation beam to the first light sensor by reflecting on the polarization splitting component after passing through the phase delay component,
the optical detection method further comprises the following steps:
passing the secondary light through the phase retardation assembly to the polarization beam splitting assembly, wherein a portion of the secondary light is reflected at the polarization beam splitting assembly and the remaining portion of the secondary light passes through the polarization beam splitting assembly; and
the method of transmitting the reflected secondary light to a second light sensor through a first wavelength selective element, wherein guiding the excitation beam reflected by the thinned region to the first light sensor by the beam guiding structure to receive the excitation beam reflected by the thinned region to generate the first detection signal further comprises: reflecting the reflected excitation light beam on the first wavelength selective component to pass to the first light sensor; and
the method for transmitting the secondary light beam passing through the polarization beam splitting device to the second light sensor by sequentially reflecting the secondary light beam by the scanning reflector, the second wavelength selective device and the first wavelength selective device, wherein the method for guiding the excitation beam to irradiate the thinned region by the beam guiding structure so that the thinned region reflects the excitation beam further comprises: passing the excitation beam from a light source through the second wavelength selective component to the scanning reflector.
7. The optical inspection method of claim 6, wherein the optical inspection method further comprises:
adjusting a position at which the excitation beam is delivered onto the thinned region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610992816.6A CN108072613B (en) | 2016-11-11 | 2016-11-11 | Optical detection device and detection method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610992816.6A CN108072613B (en) | 2016-11-11 | 2016-11-11 | Optical detection device and detection method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108072613A CN108072613A (en) | 2018-05-25 |
| CN108072613B true CN108072613B (en) | 2020-09-08 |
Family
ID=62154702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610992816.6A Active CN108072613B (en) | 2016-11-11 | 2016-11-11 | Optical detection device and detection method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108072613B (en) |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3599754B2 (en) * | 1993-01-18 | 2004-12-08 | オリンパス株式会社 | Confocal scanning optical microscope |
| US5578832A (en) * | 1994-09-02 | 1996-11-26 | Affymetrix, Inc. | Method and apparatus for imaging a sample on a device |
| EP0964269A3 (en) * | 1998-06-10 | 2006-09-06 | Fuji Photo Film Co., Ltd. | Radiation image read-out method and apparatus |
| KR100423714B1 (en) * | 1998-08-10 | 2004-03-18 | 미쓰비시덴키 가부시키가이샤 | Device for inspecting printed boards |
| US6091488A (en) * | 1999-03-22 | 2000-07-18 | Beltronics, Inc. | Method of and apparatus for automatic high-speed optical inspection of semi-conductor structures and the like through fluorescent photoresist inspection |
| US6809809B2 (en) * | 2000-11-15 | 2004-10-26 | Real Time Metrology, Inc. | Optical method and apparatus for inspecting large area planar objects |
| US6927847B2 (en) * | 2001-09-13 | 2005-08-09 | Hitachi High-Technologies Corporation | Method and apparatus for inspecting pattern defects |
| US7286242B2 (en) * | 2001-09-21 | 2007-10-23 | Kmac | Apparatus for measuring characteristics of thin film by means of two-dimensional detector and method of measuring the same |
| US7223986B2 (en) * | 2002-08-29 | 2007-05-29 | Olympus Optical Co., Ltd. | Laser scanning microscope |
| JP2004233163A (en) * | 2003-01-29 | 2004-08-19 | Hitachi High-Technologies Corp | Method and device for inspecting pattern defect |
| US7227984B2 (en) * | 2003-03-03 | 2007-06-05 | Kla-Tencor Technologies Corporation | Method and apparatus for identifying defects in a substrate surface by using dithering to reconstruct under-sampled images |
| CN1614457A (en) * | 2004-11-30 | 2005-05-11 | 哈尔滨工业大学 | Confocal interference microscope with high-space resolution imaging ability |
| JP4760564B2 (en) * | 2006-06-20 | 2011-08-31 | 日本電気株式会社 | Pattern shape defect detection method and detection apparatus |
| KR101022769B1 (en) * | 2008-10-20 | 2011-03-17 | 삼성전자주식회사 | Optical dectecting apparatus for bio-chip |
| CN101551324B (en) * | 2009-05-08 | 2011-01-05 | 中国科学院光电技术研究所 | Semiconductor material characteristic measuring device and method based on double detection beams |
| CN102425998B (en) * | 2011-09-23 | 2013-07-10 | 西安工业大学 | Full parameter detection apparatus of polished surface quality of optical element and detection method thereof |
| TW201326775A (en) * | 2011-12-26 | 2013-07-01 | Yin Tsung Co Ltd | Energy optical detecting apparatus |
| JPWO2013146365A1 (en) * | 2012-03-29 | 2015-12-10 | パナソニックＩｐマネジメント株式会社 | Fluorescence detection device |
| EP2888620A1 (en) * | 2012-08-24 | 2015-07-01 | Advanced Micro Devices, Inc. | Laser scanning module including an optical isolator |
| CN203164121U (en) * | 2013-03-20 | 2013-08-28 | 上海如海光电科技有限公司 | Laser-induced fluorescence spectrum detection device |
| JP6160200B2 (en) * | 2013-04-18 | 2017-07-12 | 株式会社ジェイテクト | Optical nondestructive inspection apparatus and optical nondestructive inspection method |
| US9354177B2 (en) * | 2013-06-26 | 2016-05-31 | Kla-Tencor Corporation | System and method for defect detection and photoluminescence measurement of a sample |
| US9766181B2 (en) * | 2013-06-28 | 2017-09-19 | Massachusetts Institute Of Technology | Wide-field imaging using nitrogen vacancies |
| JP5713419B1 (en) * | 2014-09-30 | 2015-05-07 | レーザーテック株式会社 | Defect classification method and inspection device |
| CN204536217U (en) * | 2015-04-13 | 2015-08-05 | 无锡迈福光学科技有限公司 | A kind of surface blemish optical detection apparatus |
| US10048197B2 (en) * | 2015-04-28 | 2018-08-14 | Taiwan Biophotonic Corporation | Optical measurement device and optical measurement method |
| CN105973855A (en) * | 2016-06-03 | 2016-09-28 | 苏州百源基因技术有限公司 | Infrared visible light fluorescence detection system |
-
2016
- 2016-11-11 CN CN201610992816.6A patent/CN108072613B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108072613A (en) | 2018-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11009461B2 (en) | Defect investigation device simultaneously detecting photoluminescence and scattered light | |
| JP6552513B2 (en) | Apparatus and method combining bright field inspection, dark field inspection, and photothermal inspection | |
| US9546962B2 (en) | Multi-spot scanning collection optics | |
| TWI677679B (en) | Methods and apparatus for speckle suppression in laser dark-field systems | |
| EP2098853A2 (en) | Terahertz spectrometer | |
| KR20160135790A (en) | System and method for reducing the bandwidth of a laser and an inspection system and method using a laser | |
| TW201602738A (en) | In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning | |
| JPH1090174A (en) | Method and apparatus for inspection of product | |
| US7023954B2 (en) | Optical alignment of X-ray microanalyzers | |
| TW201627652A (en) | Optical metrology system for spectral imaging of a sample | |
| WO2017013759A1 (en) | Far-infrared spectroscopy device | |
| KR20150004146A (en) | Detecting apparatus using terahertz | |
| WO2013161860A1 (en) | Semiconductor non-destructive inspection device and semiconductor non-destructive inspection method | |
| CN116660285B (en) | Wafer characteristic spectrum on-line measuring device | |
| JP2006308426A (en) | Terahertz measuring device | |
| WO2018220931A1 (en) | Semiconductor inspection device | |
| US20170082490A1 (en) | High Dynamic Range Infrared Imaging Spectroscopy | |
| EP3165903B1 (en) | Optical metrology system for spectral imaging of a sample | |
| US10816480B2 (en) | Method of detecting a defect on a substrate, apparatus for performing the same and method of manufacturing semiconductor device using the same | |
| JP2023551972A (en) | Determining the type and density of dislocations in semiconductor materials using cathodoluminescence measurements | |
| US9995627B2 (en) | Raster optic device for optical hyper spectral scanning | |
| US20230360975A1 (en) | System and method for high speed inspection of semiconductor substrates | |
| CN108072613B (en) | Optical detection device and detection method thereof | |
| JP4325909B2 (en) | Defect inspection apparatus, defect inspection method, optical scanning apparatus, and semiconductor device manufacturing method | |
| KR20150004147A (en) | Detecting apparatus using terahertz |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |