CN108072613B - Optical detection device and detection method thereof - Google Patents

Abstract

The invention relates to an optical detection device and a detection method thereof. The light source is used for emitting an excitation light beam with the wavelength ranging from 200 nanometers to 300 nanometers. The beam directing structure directs an excitation beam to impinge on the thinned region of the sample such that the thinned region reflects the excitation beam, and the beam directing structure is adapted to receive the excitation beam reflected by the thinned region. The beam guide structure is used for guiding the excitation beam reflected by the thinned area to the first light sensor, and the first light sensor receives the excitation beam reflected by the thinned area to generate a first detection signal. The processor is electrically coupled to the first light sensor to process the first detection signal. The method and the device can meet the detection requirement of the current small-scale semiconductor assembly.

Description

Optical detection device and detection method thereof

technical field

The invention relates to an optical detection device and a detection method thereof.

Background technique

In order to improve the yield of the semiconductor process, product testing needs to be performed independently. For example, an optical scanning microscope (laser scanning microscope, LSM) and other optical scanning microscopes can be used together with a solid immersion lens (SIL) to acquire images of the area to be inspected of the semiconductor component, so as to judge the manufacturing quality of the semiconductor component. Generally speaking, an optical scanning microscope will use a detection beam having a wavelength of visible light or infrared light to inspect the area to be inspected of the semiconductor device. However, with the reduction of the size of the integrated circuits, the resolution of the optical scanning microscope using the above-mentioned detection beam for detection is less and less suitable for detecting the integrated circuits of the current mainstream scale. For example, the line width of today's mainstream-scale integrated circuits is about 10 nanometers to 50 nanometers, but the resolution limits of optical scanning microscopes using detection beams of visible wavelengths and infrared wavelengths are about 100 nanometers and 180 nanometers, respectively. It is clearly difficult to meet the inspection needs of today's semiconductor components.

SUMMARY OF THE INVENTION

Embodiments of the present invention provide an optical detection device suitable for detecting a sample, and the sample has a thinned area. The optical detection device includes a light source, a beam guiding structure, a first light sensor, and a processor. The light source is used for emitting excitation light beams with wavelengths ranging from 200 nanometers to 300 nanometers. The beam guiding structure is arranged on the transmission path of the excitation beam. The beam directing structure directs the excitation beam to impinge on the thinned area so that the thinned area reflects the excitation beam, and the beam directing structure is adapted to receive the excitation beam reflected by the thinned area. The first photosensor is disposed on the transmission path of the excitation beam reflected by the thinned region. The beam guiding structure is used for guiding the excitation beam reflected by the thinned area to the first photo sensor, and the first photo sensor receives the excitation beam reflected by the thinned area to generate a first detection signal. The processor is electrically coupled to the first light sensor to process the first detection signal.

Other embodiments of the present invention provide an optical detection device suitable for detecting a sample having a thinned area. The optical detection device includes a light source, a beam guiding structure, a first light sensor, a second light sensor, and a processor. The light source is used for emitting excitation light beams with wavelengths ranging from 200 nanometers to 300 nanometers. The beam guiding structure is arranged on the transmission path of the excitation beam. The beam guiding structure guides the excitation beam to irradiate on the thinned area, so that the thinned area reflects the excitation beam to form an image beam, and the excitation beam excites the sample to generate secondary light. The beam guiding structure is adapted to receive the image beam as well as the secondary light. The first light sensor is arranged on the transmission path of the image beam. The light beam guiding structure is used for guiding the image light beam to the first light sensor, and the first light sensor receives the image light beam to generate the first detection signal. The second light sensor is arranged on the transmission path of the secondary light. The beam guiding structure is used for guiding the secondary light to the second light sensor, and the second light sensor receives the secondary light to generate a second detection signal. The processor is electrically coupled to the first light sensor and the second light sensor to process the first detection signal and the second detection signal.

Other embodiments of the present invention provide an optical detection method suitable for detection of a sample having a thinned region. The optical detection method includes: emitting an excitation beam with a wavelength of 200 nanometers to 300 nanometers; guiding the excitation beam through a beam guiding structure to irradiate on the thinned area so that the thinned area reflects the excitation beam; guiding the thinned area through the beam guiding structure reflecting the excitation beam to a first photosensor to receive the excitation beam reflected by the thinned region to generate a first detection signal; and processing the first detection signal.

Description of drawings

The various aspects of the invention are best understood when read in the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

FIG. 1 shows a schematic diagram of an optical path of an optical detection device according to an embodiment of the present invention.

FIG. 2 shows a schematic diagram of the sample of FIG. 1 with thinned regions.

FIG. 3 shows a schematic diagram of an optical path of an optical detection device according to another embodiment of the present invention.

FIG. 4 shows a flow chart of steps of an optical detection method according to an embodiment of the present invention.

Description of reference numbers:

50: sample;

50a: thinned area;

52: back;

54: the structure of the sample to be detected;

100, 300: Optical detection device;

110: light source;

120: beam guiding structure;

121: Scanning reflector;

122: polarized light splitting component;

123: phase delay component;

124: the first wavelength selection component;

125: the second wavelength selection component;

126, 127, 128, 129: lens;

130: a first light sensor;

140: processor;

150, 350: the second light sensor;

160: multiplexer;

170: detection platform;

180: circuit board;

DS1: the first detection signal;

DS2: the second detection signal;

EB: excitation beam;

IB: image beam;

S410, S420, S430, S440: the steps of the optical detection method;

SIL: solid-state immersion lens;

SR, SR1, SR2: secondary rays;

T1, T2: Thickness.

Detailed ways

The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are set forth below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, in the following description a first feature is formed on or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which the first feature and the second feature are formed in direct contact. Embodiments in which additional features may be formed between the two features such that the first feature and the second feature may not be in direct contact. Additionally, the present disclosure may repeat reference numbers and/or letters in various instances. This repetition is for the sake of brevity and clarity and is not itself indicative of the relationship between the various embodiments and/or configurations discussed.

Also, for ease of description, spaces such as "beneath", "below", "lower", "above", "upper" etc. may be used herein. Relative terms are used to describe the relationship of one component or feature to another (other) component or feature shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation shown in the figures. The device may have other orientations (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

FIG. 1 shows a schematic diagram of an optical path of an optical detection device according to an embodiment of the present invention. Referring to FIG. 1 , in this embodiment, the optical detection device 100 includes a light source 110 , a beam guiding structure 120 , a first light sensor 130 and a processor 140 . The light source 110 is used for emitting an excitation beam EB with a wavelength of 200 nanometers to 300 nanometers, and the beam guiding structure 120 is disposed on the transmission path of the excitation beam EB. Specifically, the optical detection device 100 is adapted to detect the sample 50 . The beam guiding structure 120 is used to guide the excitation beam EB to the sample 50 , and the beam guiding structure 120 is also used to guide the excitation beam EB reflected by the sample 50 to the first photosensor 130 . In addition, the processor 140 is electrically coupled to the first photosensor 130 to process detection signals from the first photosensor 130 about the excitation beam EB to detect the sample 50 . In this embodiment, the optical detection device 100 is, for example, but not limited to, a laser scanning microscope (LSM), which is suitable for acquiring an image of the sample 50 . The light source 110 is, for example, a laser light source, and the excitation beam EB is, for example, but not limited to, a continuous wave laser (CW laser for short) beam or a pulsed laser (pulsed laser) beam. In some embodiments, the wavelength range of the excitation light beam EB is not limited to the above-mentioned wavelength range, and the wavelength range of the excitation light beam EB may be, for example, other ultraviolet wavelength ranges or other wavelength ranges.

FIG. 2 shows a schematic diagram of the sample of FIG. 1 with thinned regions. Referring to FIG. 2 , in this embodiment, the backside 52 of the sample 50 faces the excitation beam EB, and the excitation beam EB guided by the beam guiding structure 120 scans the sample 50 through the backside 52 to obtain, for example, information about the to-be-detected Image of sample structure 54 . In detail, the sample 50 is, for example, but not limited to, a semiconductor package or other kinds of semiconductor components, and the sample structure 54 to be tested is, for example, but not limited to, a semiconductor structure. In order to improve the resolution of the acquired image, the sample 50 needs to be scanned with the excitation beam EB having a shorter wavelength. However, if the sample 50 is a semiconductor component having a high absorption rate for the excitation beam EB of the shorter wavelength, the excitation beam EB of the shorter wavelength may be difficult to penetrate the sample 50 due to the thickness of the sample 50 being too thick. Therefore, in the present embodiment, the sample 50 may have, for example, a thinned region 50 a with a reduced thickness, and the thinned region 50 a is, for example, located on the back surface 52 of the sample 50 . The reduced thickness of the thinned region 50a of the sample 50 enables the excitation light beam EB with a shorter wavelength to easily penetrate the sample 50 for efficient detection. In detail, the thickness of the thinned region 50a of the sample 50 can be reduced, for example, by grinding. For example, the initial thickness T1 of the sample 50 may be, for example, 5 micrometers, and the thickness T2 of the sample 50 after the thickness reduction is, for example, less than 1 micrometer, for example, less than 500 nanometers, but the invention is not limited thereto.

Please continue to refer to FIG. 1 and also refer to FIG. 2 , in this embodiment, the beam guiding structure 120 guides the excitation beam EB to irradiate the thinned area 50a of the sample 50 so that the thinned area 50a reflects the excitation beam EB. Specifically, the beam guiding structure 120 includes a scanning reflector 121 , a polarization beam splitting component 122 , a phase retardation component 123 , a lens 126 and a lens 129 . The excitation beam EB emitted by the light source 110 has, for example, a linear polarization direction, and the linear polarization direction is perpendicular to the traveling direction of the excitation beam EB. The excitation beam EB is transmitted to the scanning reflector 121 after passing through the lens 126 . The scanning reflector 121 is, for example, but not limited to, a scanning mirror, which can reflect the excitation beam EB and adjust the reflection surface thereof by rotating, thereby adjusting the reflection direction of the excitation beam EB. Specifically, in this embodiment, the scanning reflector 121 is used to adjust the position where the excitation beam EB is transmitted to the thinned region 50 a of the sample 50 . In addition, for example, the scanning reflector 121 is, for example, a Galvanometric scanning mirror (GSM), which can be rotated along an axis to adjust its reflective surface, but the present invention is not limited to this .

In this embodiment, the excitation light beam EB is reflected by the scanning reflector 121 and passes through the polarization beam splitting element 122 and the phase delay element 123 in sequence. Specifically, the polarization beam splitter component 122 is, for example, a polarization beam splitter (PBS), which can pass the light beam with one specific polarization direction and reflect the light beam with another specific polarization direction. For example, the polarization beam splitting component 122 is, for example, but not limited to, can pass the P-polarized light and reflect the S-polarized light. In addition, the phase delay element 123 is, for example, but not limited to, a quarter wave plate (QWP). When the excitation beam EB passes through the phase retardation element 123, the excitation beam EB will generate a phase retardation amount of a quarter wavelength. In this embodiment, the polarization beam splitting component 122 can pass the excitation beam EB having the above-mentioned linear polarization direction. After the excitation light beam EB passing through the polarization beam splitting component 122 passes through the phase retardation component 123, the excitation light beam EB has a circular polarization state, for example.

In this embodiment, the excitation beam EB passes through the polarization beam splitting element 122 and the phase retardation element 123 in sequence, and then passes through the lens 129 and the solid-state immersion lens SIL, and then is transmitted to the sample 50 . The excitation beam EB is irradiated on the thinned area 50a of the sample 50 so that the thinned area 50a reflects the excitation beam EB to form the image beam IB. In detail, the solid-state immersion lens SIL can be firmly attached to the flat surface of the thinned region 50 a of the sample 50 , so that the optical detection device 100 can accurately detect the sample 50 . In this embodiment, the beam guiding structure 120 is adapted to receive the image beam IB (ie, the excitation beam EB reflected by the thinned region 50 a ), and the beam guiding structure 120 is used to guide the image beam IB to the first photosensor 130 . Specifically, the image beam IB has the same or similar polarization state as the excitation beam EB after it is emitted from the thinned region 50a of the sample 50 . The image light beam IB will pass through the phase retardation element 123 and be transmitted to the polarization beam splitting element 122 . At this time, the phase retardation component 123 causes a phase delay of the image beam IB, for example, a quarter-wavelength phase delay amount, so that the image beam IB is converted from a circular polarization state to a linear polarization state, and the linear polarization of the image beam IB The direction is perpendicular to the linear polarization direction of the excitation beam EB emitted by the light source 110 . In this embodiment, the first light sensor 130 is disposed on the transmission path of the image beam IB. After the image beam IB is transmitted to the polarization beam splitting component 122 , the polarization beam splitting component 122 reflects the excitation beam EB and transmits it to the first photosensor 130 .

In this embodiment, the excitation light beam EB irradiated on the thinned region 50a of the sample 50 also excites the sample 50 to generate the secondary light beam SR. Specifically, the secondary light SR is, for example, the secondary light SR generated by the excitation light beam EB through photoluminescence, and the wavelength range of the secondary light SR may be, for example, the wavelength range of visible light or infrared light. In contrast, the wavelength range of the image beam IB is, for example, the same as the wavelength range of the excitation beam EB. In this embodiment, the optical detection device 100 further includes a second light sensor 150 disposed on the transmission path of the secondary light SR, and the beam guiding structure 120 is also used for guiding the secondary light SR to the second light sensor 150 .

In this embodiment, the beam guiding structure 120 further includes a first wavelength selection component 124 and a second wavelength selection component 125 . The first wavelength selection element 124 is arranged on the transmission path of the image light beam IB and also arranged on the transmission path of the secondary light beam SR. The second wavelength selection element 125 is disposed between the scanning reflector 121 and the light source 110 , and the first wavelength selection element 124 is disposed between the first optical sensor 130 and the second wavelength selection element 125 . Specifically, the first wavelength selection component 124 and the second wavelength selection component 125 are, for example, dichroic members, which can reflect light beams of a specific wavelength band and allow light beams of other wavelength bands to penetrate, or allow light beams of a specific wavelength band to pass through. Transmits and reflects beams of other wavelengths. In this embodiment, the secondary light SR is transmitted to the polarization beam splitting element 122 through the phase retardation element 123 . After the secondary light SR generated by photoluminescence passes through the phase retardation element 123, it includes a first part with a specific polarization direction that can be reflected by the polarization beam splitting element 122, namely the secondary light SR1, and includes a second light SR1 with another specific polarization The second part of the polarization beam splitting component 122, that is, the secondary light SR2, can pass through the direction of the light. Specifically, a part of the secondary light SR (for example, the secondary light SR1 ) passing through the phase retardation element 123 is reflected on the polarization beam splitting element 122 , and the rest of the secondary light SR (for example, the secondary light SR2 ) passes through the polarization Spectral component 122 .

In this embodiment, the first wavelength selection component 124 can reflect the wavelength range of ultraviolet light and allow light beams of other wavelength bands to pass through, for example. Specifically, the reflected secondary light SR, ie, the secondary light SR1 , is transmitted to the second light sensor 150 through the first wavelength selection component 124 . In addition, the image beam IB (ie, the reflected excitation beam EB) is adapted to be reflected on the first wavelength selective component 124 for delivery to the first photosensor 130 . In addition, the image beam IB and the secondary light SR1 can be adjusted by the lens 127 and the lens 128 to adjust their beam size or other optical properties, so as to facilitate reception by the first photosensor 130 and the second photosensor 150 .

In addition, in this embodiment, the second wavelength selection component 125 can reflect infrared light or visible light wavelength range, for example, and allow light beams of other wavelength bands to penetrate. Therefore, the excitation light beam EB emitted by the light source 110 is suitable for passing through the second wavelength selective component 125 to the scanning reflector 121, and the secondary light SR passing through the polarization beam splitting component 122, that is, the secondary light SR2, will be at the second wavelength Reflection occurs on selection component 125 . Specifically, the secondary light SR passing through the polarization beam splitting element 122 , namely the secondary light SR2 , is reflected by the scanning reflector 121 , the second wavelength selection element 125 and the first wavelength selection element 124 in sequence and transmitted to the second light sensor 150. In this way, the secondary light SR2 passing through the polarization beam splitting component 122 can also be guided to the second light sensor 150, and the secondary light SR can be effectively utilized, so that the second light sensor 150 can receive the secondary light with higher light intensity SR, and improve the quality of optical detection. In addition, specifically, the number of lenses 126 , 127 , 128 , 129 and wavelength selection components (such as the first wavelength selection component 124 and the second wavelength selection component 125 ) and the arrangement positions thereof are only for illustration and are not intended to be limiting In the present invention, the number and the arrangement position thereof can be adjusted according to different optical structures of the optical detection device 100 .

In the present embodiment, the first photosensor 130 receives the excitation beam EB reflected by the thinned region 50a of the sample 50, that is, the image beam IB, to generate the first detection signal DS1. In addition, the second light sensor 150 receives the secondary light SR (including the secondary light SR1 and the secondary light SR2 ) to generate the second detection signal DS2 . The processor 140 is electrically coupled to the first photosensor 130 and the second photosensor 150, respectively, to process the first detection signal DS1 and the second detection signal DS2, respectively. Specifically, the processor 140 can visualize the sample structure 54 to be detected in the sample 50 according to the first detection signal DS1 and/or the second detection signal DS2 in coordination with the adjustment of the scanning reflector 121 .

Generally speaking, when a detection beam with a shorter optical wavelength and an appropriate optical path structure are used to perform optical detection on the sample 50, the resolution of the image of the sample 50 obtained by the optical detection device 100 will be higher. In this embodiment, the first light sensor 130 is, for example, an ultraviolet light sensor, and the detection frequency thereof is, for example, but not limited to, less than or equal to 1 GHz. In addition, the wavelength of the excitation beam EB used to detect the sample 50 is between 200 nm and 300 nm, which falls within the wavelength range of ultraviolet light. Therefore, the excitation beam EB with the wavelength of ultraviolet light can be guided by the beam guiding structure 120 to realize high-resolution optical detection, and can meet the detection requirements of today's small-scale semiconductor components. Specifically, the optical detection device 100 is equipped with a solid-state immersion lens SIL that has a high refractive index and high light transmittance, and uses a material with good thermal conductivity to perform optical detection. For example, when the excitation beam EB used for detection is matched with the sample 50 having the thinned region 50a and the solid-state immersion lens SIL with an aperture number (NA) of 2.5, the optical detection device 100 obtains the The resolution of the sample 50 image can reach 45 nanometers. This resolution is more than twice that of detection beams using visible wavelengths and more than four times that of detection beams using infrared wavelengths.

In addition, in this embodiment, with the sample 50 having the thinned region 50a after the thickness reduction, for example, ultra thinned silicon (UTS) with a thickness of less than 500 nanometers, the first light sensor 130 receives the The image light beam IB may have a strong light intensity, so that the first detection signal DS1 generated by the first optical sensor 130 has a strong signal intensity. Therefore, the first detection signal DS1 generated by the first optical sensor 130 has a higher signal-to-noise ratio (SNR), so that the image of the sample 50 generated according to the first detection signal DS1 is clearer.

In addition, in this embodiment, the second light sensor 150 is, for example, a visible light or/and an infrared light sensor, and its detection frequency is, for example, but not limited to, greater than or equal to 3 GHz. In some embodiments, the second light sensor 150 can receive secondary light SR whose wavelength falls within the wavelength range of 500 nm to 1550 nm, and the detection frequency of the second light sensor 150 is, for example, greater than or equal to 12 GHz. The second light sensor 150 can be equipped with a lock-in amplifier (Lock-in Amplifier) to scan the spectrum of the secondary light SR. Therefore, the optical detection device 100 can acquire an image of the sample 50 by receiving the secondary light SR, and analyze the material composition of the sample 50 . In detail, the optical inspection device 100 may, for example, detect the distribution of defects on the sample structure 54 to be inspected of the sample 50 by receiving the secondary light SR.

Specifically, the optical detection apparatus 100 may optionally be provided with a multiplexer 160 . The first light sensor 130 and the second light sensor 150 are respectively electrically coupled to the multiplexer 160 , and the multiplexer 160 is electrically coupled to the processor 140 . In this embodiment, the processor 140 can select to receive the first detection signal DS1 from the first optical sensor 130 or the second detection signal DS2 from the second optical sensor 150 through the multiplexer 160 . Alternatively, the processor 140 may also receive the first detection signal DS1 and the second detection signal DS2 at the same time, but the present invention is not limited to this. Specifically, the image of the sample 50 presented according to the first detection signal DS1 has a higher resolution. In addition, the second light sensor 150 has a high detection frequency, and its detection sensitivity is better than that of the first light sensor 130 . In this embodiment, the optical detection device 100 can be matched with the first photosensor 130 and/or the second photosensor 150 according to the image beam IB and/or the secondary light SR, so as to detect the sample structure 54 of the sample 50 to be detected , the present invention is not limited to this.

In this embodiment, the optical detection device 100 further includes a detection platform 170 and a circuit board 180 , and the circuit board 180 is disposed on the detection platform 170 . The sample 50 is disposed on the circuit board 180 and is electrically connected to the circuit board 180 . Specifically, the sample structure 54 of the sample 50 to be tested includes, for example, an integrated circuit structure. The optical detection device 100 can input a test signal into the sample structure 54 to be detected through the circuit board 180 , and the test signal can, for example, have a periodic waveform. When the optical detection device 100 acquires the image of the sample 50, the image of the sample 50 will present the electrical characteristics of the sample structure 54 to be detected after the test signal is input. For example, the optical inspection device 100 can test the electrical characteristics of a specific transistor to present the electrical performance of the transistor, so as to detect the quality of the transistor.

FIG. 3 shows a schematic diagram of an optical path of an optical detection device according to another embodiment of the present invention. Please refer to FIG. 3 , the optical detection apparatus 300 of the embodiment of FIG. 3 is similar to the optical detection apparatus 100 of the embodiment of FIG. 1 . For the components and related descriptions of the optical detection device 300, reference may be made to the components and related descriptions of the optical detection device 100, which will not be repeated here. The differences between the optical detection device 300 and the optical detection device 100 are as follows. In the present embodiment, the optical detection device 300 includes a second light sensor 350, and the second light sensor 350 is, for example, a spectrometer, for directly receiving the secondary light SR and scanning the spectrum of the secondary light SR. In addition, in this embodiment, the multiplexer 160 in the embodiment of FIG. 1 can be selectively matched, so that the processor 140 can selectively receive the first detection from the first optical sensor 130 through the multiplexer 160 . The signal DS1 or the second detection signal DS2 from the second light sensor 350 is received. Specifically, the optical inspection device 300 can also realize high-resolution optical inspection, and can meet the inspection requirements of today's small-scale semiconductor components.

FIG. 4 shows a flow chart of steps of an optical detection method according to an embodiment of the present invention. Referring to FIG. 4 , in this embodiment, the optical detection method can be applied to at least the optical detection apparatus 100 of FIG. 1 and the optical detection apparatus 300 of FIG. 3 . In particular, the optical detection method is suitable for detection of samples having thinned regions. The optical detection method has the following steps. In step S410, an excitation beam having a wavelength between 200 nm and 300 nm is emitted. In step S420, the excitation beam is guided by the beam guiding structure to be irradiated on the thinned area so that the thinned area reflects the excitation beam. Next, in step S430, the excitation beam reflected by the thinned region is guided by the beam guiding structure to the first photosensor to receive the excitation beam reflected by the thinned region to generate a first detection signal. After that, in step S440, the first detection signal is processed. Specifically, the optical detection method according to the embodiment of the present invention can obtain sufficient teachings, suggestions and implementation descriptions from the descriptions of the embodiments in FIGS. 1 to 3 , and thus will not be repeated.

To sum up, in the optical detection device and the optical detection method of the embodiments of the present invention, the light source is used to emit an excitation beam with a wavelength of 200 nm to 300 nm, and the beam guiding structure guides the excitation beam to illuminate the thinned area of the sample above so that the thinned area reflects the excitation beam. In addition, the beam guiding structure is adapted to receive the excitation beam reflected by the thinned area, and the beam guiding structure is used to guide the excitation beam reflected by the thinned area to the first photosensor for optical detection of the thinned area of the sample. Therefore, the excitation beam with ultraviolet wavelength can be guided by the beam guiding structure to realize high-resolution optical detection, which can meet the detection requirements of today's small-scale semiconductor components.

The features of several embodiments have been summarized above so that those skilled in the art may better understand the various aspects of the invention. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or for carrying out the embodiments described herein example of the same advantages. Those skilled in the art should also realize that these equivalent constructions do not depart from the spirit and scope of the present invention, and that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the present invention .

Claims (7)

1. An optical inspection device adapted to inspect a sample, the sample having a thinned region, the optical inspection device comprising:

a light source for emitting an excitation beam having a wavelength of 200 nm to 300 nm;

a beam guiding structure disposed on a propagation path of the excitation beam, the beam guiding structure guiding the excitation beam to impinge on the thinning region so that the thinning region reflects the excitation beam, the beam guiding structure being adapted to receive the excitation beam reflected by the thinning region, wherein the beam guiding structure at least includes a phase delay element;

a first light sensor disposed on a transmission path of the excitation light beam reflected by the thinned region, wherein the beam guiding structure is configured to guide the excitation light beam reflected by the thinned region to the first light sensor, and the first light sensor receives the excitation light beam reflected by the thinned region to generate a first detection signal; and

a processor electrically coupled to the first light sensor to process the first detection signal,

wherein the beam guiding structure further comprises a scanning reflector and a polarization beam splitter, the excitation beam emitted from the light source is reflected by the scanning reflector and transmitted to the sample through the polarization beam splitter and the phase delay component in sequence, and is irradiated on the thinned region to make the thinned region reflect the excitation beam, wherein the excitation beam reflected by the thinned region is transmitted to the first light sensor through reflection on the polarization beam splitter after passing through the phase delay component,

the optical detection device further includes a second light sensor, wherein the excitation beam irradiated on the thinned region excites the sample to generate a secondary light, and the secondary light is transmitted to the polarization splitting assembly through the phase delay assembly, the second light sensor is disposed on a transmission path of the secondary light, and the beam guiding structure further includes a first wavelength selective assembly, a portion of the secondary light passing through the phase delay assembly is reflected on the polarization splitting assembly, and the rest of the secondary light passes through the polarization splitting assembly, the reflected secondary light is transmitted to the second light sensor through the first wavelength selective assembly, and the second light sensor receives the secondary light to generate a second detection signal, and the processor is electrically coupled to the second light sensor to process the second detection signal, wherein the excitation light beam reflected by the thinned region is adapted to be reflected on the first wavelength selective component to pass to the first light sensor,

wherein the light beam guiding structure further comprises a second wavelength selective element disposed between the scanning reflector and the light source, the first wavelength selective element is disposed between the first light sensor and the second wavelength selective element, and the excitation light beam emitted from the light source is suitable for being transmitted to the scanning reflector through the second wavelength selective element, and the secondary light beam passing through the polarization splitting element is transmitted to the second light sensor through the scanning reflector, the second wavelength selective element and the first wavelength selective element in sequence.

2. An optical inspection device according to claim 1, wherein the scanning reflector is used to adjust the position at which the excitation beam passes onto the thinned region.

3. The optical detection device of claim 1, wherein the excitation beam is a continuous laser beam or a pulsed laser beam.

4. An optical inspection device adapted to inspect a sample, the sample having a thinned region, the optical inspection device comprising:

a light source for emitting an excitation beam having a wavelength of 200 nm to 300 nm;

a beam guiding structure disposed on a transmission path of the excitation beam, the beam guiding structure guiding the excitation beam to irradiate on the thinned region so that the thinned region reflects the excitation beam to form an image beam, and the excitation beam excites the sample to generate a secondary light, wherein the beam guiding structure is adapted to receive the image beam and the secondary light;

a first light sensor disposed on a transmission path of the image beam, wherein the beam guiding structure is used for guiding the image beam to the first light sensor, and the first light sensor receives the image beam to generate a first detection signal;

the second light sensor is configured on a transmission path of the secondary light, the light beam guiding structure is used for guiding the secondary light to the second light sensor, and the second light sensor receives the secondary light to generate a second detection signal; and

a processor electrically coupled to the first light sensor and the second light sensor to process the first detection signal and the second detection signal,

wherein the beam guiding structure comprises a scanning reflector, a polarization beam splitter and a phase delay component, the excitation beam emitted by the light source is reflected by the scanning reflector and sequentially transmitted to the sample through the polarization beam splitter and the phase delay component, and is irradiated on the thinned area to enable the thinned area to reflect the excitation beam to form the image beam, wherein the image beam is transmitted to the first light sensor after being reflected on the polarization beam splitter after passing through the phase delay component,

wherein the secondary light is transmitted to the polarization beam splitting element through the phase retardation element, the beam guiding structure further comprises a first wavelength selective element, a portion of the secondary light passing through the phase retardation element is reflected on the polarization beam splitting element, and the rest of the secondary light passes through the polarization beam splitting element, the reflected secondary light is transmitted to the second light sensor through the first wavelength selective element, and the second light sensor receives the secondary light to generate a second detection signal, wherein the image beam reflected by the thinned region is adapted to be reflected on the first wavelength selective element and transmitted to the first light sensor,

wherein the light beam guiding structure further comprises a second wavelength selective element disposed between the scanning reflector and the light source, the first wavelength selective element is disposed between the first light sensor and the second wavelength selective element, and the excitation light beam emitted from the light source is suitable for being transmitted to the scanning reflector through the second wavelength selective element, and the secondary light beam passing through the polarization splitting element is transmitted to the second light sensor through the scanning reflector, the second wavelength selective element and the first wavelength selective element in sequence.

5. An optical inspection device according to claim 4, wherein the scanning reflector is used to adjust the position at which the excitation beam passes onto the thinned region.

6. An optical inspection method adapted for inspecting a sample, wherein the sample has a thinned region, the optical inspection method comprising:

emitting an excitation light beam with a wavelength between 200 nm and 300 nm;

guiding the excitation beam to irradiate on the thinned area by a beam guide structure so that the thinned area reflects the excitation beam and the excitation beam irradiating on the sample excites the sample to generate secondary light;

guiding the excitation beam reflected by the thinned region to a first light sensor by the beam guiding structure to receive the excitation beam reflected by the thinned region to generate a first detection signal;

guiding the secondary light to a second light sensor by the light beam guiding structure, so that the second light sensor receives the secondary light to generate a second detection signal; and

processing the first detection signal and the second detection signal,

wherein the method of guiding the excitation beam to impinge on the thinned region by the beam guiding structure such that the thinned region reflects the excitation beam further comprises:

after being reflected by the scanning reflector, the excitation light beam passes through a polarization beam splitting component and a phase delay component in sequence to be transmitted to the sample, and irradiates on the thinned area so that the excitation light beam is reflected by the thinned area; wherein the method of guiding the excitation beam reflected by the thinned region to the first light sensor by the beam guiding structure to receive the excitation beam reflected by the thinned region to generate the first detection signal further comprises:

transmitting the reflected excitation beam to the first light sensor by reflecting on the polarization splitting component after passing through the phase delay component,

the optical detection method further comprises the following steps:

passing the secondary light through the phase retardation assembly to the polarization beam splitting assembly, wherein a portion of the secondary light is reflected at the polarization beam splitting assembly and the remaining portion of the secondary light passes through the polarization beam splitting assembly; and

the method of transmitting the reflected secondary light to a second light sensor through a first wavelength selective element, wherein guiding the excitation beam reflected by the thinned region to the first light sensor by the beam guiding structure to receive the excitation beam reflected by the thinned region to generate the first detection signal further comprises: reflecting the reflected excitation light beam on the first wavelength selective component to pass to the first light sensor; and

the method for transmitting the secondary light beam passing through the polarization beam splitting device to the second light sensor by sequentially reflecting the secondary light beam by the scanning reflector, the second wavelength selective device and the first wavelength selective device, wherein the method for guiding the excitation beam to irradiate the thinned region by the beam guiding structure so that the thinned region reflects the excitation beam further comprises: passing the excitation beam from a light source through the second wavelength selective component to the scanning reflector.

7. The optical inspection method of claim 6, wherein the optical inspection method further comprises:

adjusting a position at which the excitation beam is delivered onto the thinned region.

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