CN108067745A - A kind of processing method of the sapphire wafer product of the frame containing ink - Google Patents
A kind of processing method of the sapphire wafer product of the frame containing ink Download PDFInfo
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- CN108067745A CN108067745A CN201611018404.9A CN201611018404A CN108067745A CN 108067745 A CN108067745 A CN 108067745A CN 201611018404 A CN201611018404 A CN 201611018404A CN 108067745 A CN108067745 A CN 108067745A
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- sapphire
- ink
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention provides a kind of processing method of the sapphire wafer product of the frame containing ink, including step A, forms large stretch of sapphire substrate containing ink layer：Large stretch of sapphire substrate after plain grinding is polished is bonded with being printed on the film of multiple ink logos, and the inked areas size of each ink logo extends out more than 0.2mm than the size of ink frame in the small pieces sapphire wafer product of final gained on film；Step B, carbon dioxide laser removes ink, the film and viscose glue：Ink layer, the film and the viscose glue for the subregion that linear incision is removed on each ink logo are carried out using carbon dioxide laser, forms the transparency path processed for picosecond laser in next step；Step C, picosecond laser gets processing sapphire ready and carbon dioxide laser thermal stress is split sapphire.Processing method provided by the invention also improves the quality of sapphire product while optimized production process and raising production efficiency.
Description
Technical field
The present invention relates to sapphire manufacture fields, and in particular to a kind of processing of the sapphire wafer product of frame containing ink
Method, the sapphire wafer product is, for example, CCD camera assembly.
Background technology
Traditional glass camera processing technology includes sawing sheet, profiling, plain grinding, polishing and silk-screen, that is, includes pair
Each polishing of small flake products and silk-screen process, complex process need substantial amounts of operative employee, and production cost is higher.With indigo plant
Diamond material is more and more extensive in camera sector application, and since sapphire hardness is high, traditional glass machining technique is difficult pair
It is processed.By taking profiling technique as an example, traditional one emery wheel of profiling technique can imitate 10 sheet glass products, and for imitative blue precious
Stone can only but imitate 1-2 pieces.In addition, side oil is serious in small pieces sapphire camera silk-screen printing process, thus silk-screen process yield is low.Cause
This, if processing sapphire using traditional glass camera processing technology, the equipment needed and emery wheel loss exponentially increase；
And silk-screen process yield is low, thus printing machine demand is big.It is badly in need of finding in view of the above problems a kind of eased
Technological process produces sapphire camera, reduces cost to reach, improves the purpose of yield.
A kind of sapphire form accessory of electronic product is provided in Chinese invention patent application 201510077173.8
Processing method belongs to electronic product screen processing technique field.It is all single that it, which solves existing sapphire form accessory production,
By tool sharpening, the very low technical problem of processing efficiency.In the processing method, sapphire crystal block is first cut into process for sapphire-based
Plate prints out multiple circular ring shape ink bands with sapphire ink on sapphire substrate, then dries ink, then by sapphire
Substrate is put into fixture and fixes, and the sapphire form accessory of multiple sheets in a ring is cut into laser, finally will not
Qualified product rejects and takes out qualified finished product.The processing method is printed multiple by sapphire ink on sapphire substrate
Circular ring shape ink band can once be cut into multiple finished products, improve production efficiency, and laser can realize closed-loop control, so as to
The accuracy of laser cutting is improved, so as to improve the quality of finished product.
In addition, it is provided in Chinese invention patent application 201510389989.4 a kind of blue for being cut by laser ink silk screen printing
The device of jewel, sapphire to be cut one side have completed ink silk screen printing, the sapphire non-ink silk-screen to be cut
One side uniformly coating one layer of light absorbent, described device include fixed frame, laser cutting machine and nozzle, specifically：Fixed institute
State sapphire to be cut, and the one of ink silk screen printing will be completed down so that coated with light absorbent one facing towards laser
The light source of cutting machine；Nozzle is installed, the nozzle is sprayed when laser cutting machine carries out sapphire cutting on laser cutting head
Compressed air aids in gas, for ensureing the requirement of cutting environment.The inventive embodiments coat in sapphire non-ink silk-screen face
Using compressed air as auxiliary gas, coating light absorbent face, gained cutting are acted on by high energy laser beam for light absorbent
Product thermal damage is small, improves product quality.
Optical fiber laser cutting sapphire is used in above-mentioned documents, 1. it is big to sapphire strength damage.2. it cuts
It cuts and generates many slags, influence the quality of sapphire wafer product.3. the chipping width of traditional optical-fiber laser cutting machine can only
Accomplish within 30 μm, cutting accuracy is difficult to be further enhanced.Therefore, this field needs a kind of new frame containing ink
The processing method of sapphire wafer product.
The content of the invention
Therefore, the present invention provides a kind of processing method of the sapphire wafer product of the frame containing ink, includes the following steps,
Step A, large stretch of sapphire substrate containing ink layer is formed：Large stretch of sapphire substrate after plain grinding is polished is with being printed on
The film fitting of multiple ink logos, the ink logo after fitting on film outwardly, and each ink logo on film
Inked areas size extend out more than 0.2mm than the size of ink frame in the small pieces sapphire wafer product of final gained；
Step B, carbon dioxide laser removes ink, the film and viscose glue：LINEAR CONTINUOUS is carried out using carbon dioxide laser
Cutting removes ink layer, the film and the viscose glue of the subregion on each ink logo, is formed and swashed in next step picoseconds
The transparency path of light processing；
Step C, picosecond laser gets processing sapphire ready and carbon dioxide laser thermal stress is split sapphire：Use skin
Transparency path described in second laser along step B carries out sapphire to get processing ready, and laser dotting runs through the thickness side of sapphire sheet
To getting a diameter of 2~8 μm ready, each point spacing is 5~10 μm；It reuses carbon dioxide laser and is carried out linearly to getting path ready
Continuous thermal stress sliver, the heat that carbon dioxide laser provides cause the sapphire material between each point to split, and obtain described contain
The sapphire wafer product of ink frame.
The present invention is first using large stretch of typography, and a point multistep is cut by laser again after printing and bonding, in laser
Sapphire wafer product is directly obtained after cutting.
CO2Laser is one kind by CO2Generate the laser of laser emission.Wherein main operation material is by CO2, nitrogen
With three kinds of gas compositions of helium, nitrogen and helium are complementary gas.
Picosecond laser be a pulsewidth for picosecond laser.With picosecond ultrashort pulsewidth, repetition rate is adjustable, arteries and veins
The features such as energy is high is rushed, has more and more extensive answer in fields such as biomedicine, optical parametric oscillator, biology microscope imagings
With being increasingly becoming the instrument that becomes more and more important in modern biotechnology imaging and analysis system.
In step A of the present invention, the sapphire substrate that is taken be reach after plain grinding polishing finished product requirement thickness and surface it is thick
Large stretch of sapphire substrate of rugosity.
In a kind of specific embodiment, the thickness of the sapphire substrate is 0.1~0.6mm, preferably 0.2~
0.5mm, the thickness of the film is 0.05~0.8mm, is preferably 0.05~0.2mm；The thickness of the ink layer is
Below 0.08mm.In a kind of specific embodiment, the sheet sapphire substrate is diameter 60mm, the circle of thickness 0.3mm
Shape thin slice.The sapphire that the sapphire wafer product of the frame containing ink of gained is multi-disc internal diameter 2.5mm and outer diameter is 6.5mm is taken the photograph
As head product, the rim area of product is ink area, and the transparent window center of product is its visible area.Make in step B of the present invention
The incisory transparency path of picosecond laser is formed with ink layer, the film and viscose glue is only removed during carbon dioxide laser, and is somebody's turn to do
Carbon dioxide laser can't generate any injury to sapphire material.The skin in cutting and step C in step B of the present invention
Second laser get ready generally once can (laser takes a round along at ink frame), need not be repeatedly.
In a kind of specific embodiment, per adjacent between multiple patterns that ink for screen printing is formed on film in step A
The spacing of two patterns is more than 0.5mm, preferably 0.8~2mm；And film chip size and sheet when being bonded in preferred steps A
The size of sapphire substrate is identical.In step, it can be specifically the first multiple ink logos of silk-screen on film, reuse
Carbon dioxide laser is cut so that the size of film is identical with the size of large stretch of sapphire substrate.Can also be that first laser is cut
Cut so that both the identical ink for screen printing pattern on it again of size.
It uses in a kind of specific embodiment, in step B and is used during carbon dioxide laser linear incision ink layer
CCD is positioned, and it is 7.5~15W, 10~20KHz of laser frequency, 15~25mm/ of cutting speed that power is cut by laser in step B
s.Skilled artisans will appreciate that, the picosecond laser in carbon dioxide laser linear incision, step C in step B
It gets processing ready and carbon dioxide laser sliver speed each means translational speed of the laser in the plate face of sapphire sheet.Example
It is the translational speed of its circumferential direction such as when forming circular camera.
In a kind of specific embodiment, the line width of the transparency path formed in step B preferably exists within 0.2mm
Within 0.15mm, more preferably within 0.1mm.
In a kind of specific embodiment, the laser cutting power of picosecond laser is 7~20W in step C, and laser is frequently
20~60KH of rateZ, 40~100mm/s of cutting speed.In the present invention, can picosecond laser be selected according to sapphire thickness
Laser cutting power.When sapphire is thick, cutting power is bigger.
In a kind of specific embodiment, the laser cutting power of carbon dioxide laser is 7.5~15W in step C,
10~20KHz of laser frequency, 15~35mm/s of cutting speed；And defocus mode sliver is used, focal point control is on sapphire
At 0.1~3mm of surface, at preferably 0.2~1mm.
In a kind of specific embodiment, in step C using carbon dioxide laser thermal stress split sapphire when into
Row 2 encloses more than linear scan and obtains the product, preferably carries out 3~5 circle laser linear scans and obtains the product.In step C
In carbon dioxide laser cutting, multi-turn linear scan more than 2 circles is carried out to sapphire in the present invention, so each circle cutting
Energy used is small, to the intensity effect smaller of sapphire product.When especially carrying out 3~5 circle laser cutting in this step
Optimal value can be obtained in terms of cutting efficiency and products obtained therefrom quality.
In a kind of specific embodiment, the inked areas size of each ink logo is than final gained in step A
The size of ink frame extends out 0.2~2mm, preferably 0.3~1mm in small pieces sapphire wafer product.
In a kind of specific embodiment, the ink frame of the sapphire wafer product is in annular shape, and the indigo plant
Jewel sheet product is CCD camera assembly.
Advantageous effect：Present invention process flow is simple, compared with traditional small pieces Product Process, the similary number of operative employee's production
The camera of amount need operate machine number be substantially reduced, it is necessary to number of devices reduce, saved machine and cost of labor.
The profiling machine needed in traditional processing can save completely, and multistep is used to be cut by laser one-pass molding.Laser is cut in the present invention
The size cut can be arbitrarily devised, flexibly and easily.Laser cutting also has can not without the traditional handicrafts such as consumptive material, processing efficiency height
The advantages of replacement.And compared with using sapphire of the optical fiber laser cutting containing ink layer in the prior art, it is provided by the invention
Cutting scheme is to sapphire strength damage very little；Slag will not be generated during cutting, thus does not interfere with sapphire wafer product
Quality.The chipping width cut in the present invention can reach within 10 μm, significantly improve cutting accuracy.
In conclusion processing method provided by the invention also carries while optimized production process and raising production efficiency
High sapphire product quality.
Description of the drawings
Fig. 1 is the corresponding product structure schematic diagrames of step A in the present invention,
Fig. 2 is the corresponding product structure schematic diagrames of step B in the present invention,
Fig. 3 gets rear corresponding product structure schematic diagram ready for step C picosecond lasers in the present invention,
Fig. 4 is corresponding product structure schematic diagram after carbon dioxide laser thermal stress sliver in step C in the present invention,
Fig. 5 is the corresponding processing method schematic diagram of step C picosecond lasers in the present invention.
Specific embodiment
The present invention is illustrated by following embodiment, but protection scope of the present invention is not limited in following embodiments.
Embodiment 1
Step A：Large stretch of sapphire substrate containing ink logo is made first：Large stretch of sapphire substrate after plain grinding is polished
(thickness and surface roughness that reach finished product requirement) is bonded with being printed on the film of multiple ink logos, each pattern spacing
1mm or so, the ink logo after fitting on film outwardly, and on film each ink logo inked areas size ratio most
Eventually gained small pieces sapphire wafer product in ink frame size extend out 0.5mm or so (exradius of annulus liken to
Big 0.5mm of product or so).Products obtained therefrom is as shown in Figure 1.
Step B：Using carbon dioxide laser, ink layer, the film and glued using CCD (imaging sensor) positioning methods
The purpose of glue cuts into " finished product pattern " required profile size, this step is that ink layer of ink surface etc. is cut into uniformly
Line width ensures that next step PS (picosecond) laser cutting sapphire will not be damaged to ink layer and ink layer is caused to come off, causes side
Echinid pierces, and light leak etc. is bad.This step carbon dioxide laser cutting parameter is：It is cut by laser power 7.5W-15W, laser frequency
10-20KHz, cutting speed 15-25mm/s.Once cutting completes the step, i.e., after being taken a round using carbon dioxide laser
The white space (annular section of no lines filling) of no ink shown in Fig. 2 can be formed.
Step C：The mode being cut by laser using PS, is positioned using CCD, captures camera form or crawl prints in advance
MARK positioned, which is consistent with the positioning datum point in step B, to ensure that cutting twice is concentric
Degree is between 0-0.05mm.In a kind of specific embodiment, the laser machine used in the step is infrared PS laser cuttings
Machine is cut by the way of non-linear cutting, and cut point size is 2-5um, and cutting back edge effect is good, and chipping width exists
Within 10um, it is much better than the limit 30um of optical-fiber laser cutting machine chipping width.Product after cutting mode cutting simultaneously is strong
The product strength spent after being cut than optical-fiber laser is much higher.Laser dotting spacing is 5-10um, and specific cutting mode is shown in Fig. 5, should
Step products obtained therefrom is shown in Fig. 3.In the step, power is cut by laser：7-20W, laser frequency：20-60KHz, cutting speed：40-
100mm/s.Once cutting completes the step, i.e., can be formed after getting a circle ready using the path of picosecond laser along step B
Sapphire sheet shown in Fig. 3.Certainly, because the transparency path line width in Fig. 3 is 100 microns, the diameter of each picosecond laser cut point
For 2~5 μm, each point spacing is 5~10 μm；Therefore, Fig. 3 is the product structure schematically shown after the completion of the step,
The thickness and closeness got ready and actual conditions simultaneously differ.Due to being cut using non-linear cutting mode, shape after having cut
Into also need between points sliver is carried out by the way of thermal stress with carbon dioxide laser machine, this step equally uses
The mode of CCD positioning carries out sliver, allows picosecond what cutting formed to split between points along the profile heating of picosecond laser cutting
It opens.Carbon dioxide laser sliver parameter is to be cut by laser power 7.5W-15W, laser frequency 10-20KHz, cutting speed 15-
35mm/s, sliver number are 3 times, and defocus height is 0.5mm.The indigo plant that the frame containing ink of our needs is obtained after sliver is precious
Stone sheet product.
Comparative example 1
It cuts by optical-fiber laser after first ink for screen printing to obtain the sapphire wafer product of the frame containing ink in this.Specifically
Ground, makes large stretch of sapphire substrate first, and direct plain grinding polishing reaches the thickness and surface roughness of finished product requirement.Large stretch of blue
Silk-screen is directly carried out on sapphire substrates and obtains multiple ink logos, each pattern spacing 1mm of silk-screen or so, the pattern of silk-screen is with setting
The finished product pattern of meter is consistent.Linear incision is carried out along the outer of ink layer using optical-fiber laser cutter and obtains side containing ink
The sapphire wafer product of frame.
It is given in table 1 to optical-fiber laser cutting side described in cutting mode shown in step C in embodiment 1 and comparative example 1
The strip sapphire product of formula cutting gained carries out the comparing result of three-point bend test data, using both cutting modes
The size of the sapphire test-strips product of cutting is identical, and test method is also identical.
Table 1
As seen from Table 1, using the bending displacement of the sapphire item obtained by cutting method described in step C in the present invention, broken
Load and bending stress are all significantly higher than in comparative example 1 the sapphire item obtained by optical-fiber laser cutting mode.These data are clear and definite
Ground illustrates the intensity bigger using the sapphire product in the present invention described in step C obtained by cutting method.
It is understood in fact, comparing both cutting modes, the cutting mode used in the present invention is except to sapphire strong
Beyond degree damage is small, cutting will not generate slag, and the chipping width cut can reach within 10 μm.Therefore, the present invention carries
The processing method of confession also improves the quality of sapphire product while optimized production process and raising production efficiency.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of processing method of the sapphire wafer sheet product of frame containing ink, includes the following steps,
Step A, large stretch of sapphire substrate containing ink layer is formed：Large stretch of sapphire substrate after plain grinding is polished is multiple with being printed on
The film fitting of ink logo, and on film each ink logo inked areas size treasured more blue than the small pieces of final gained
The size of ink frame extends out more than 0.2mm in stone sheet product；
Step B, carbon dioxide laser removes ink, the film and viscose glue：LINEAR CONTINUOUS cutting is carried out using carbon dioxide laser
The ink layer, the film and viscose glue of the subregion on each ink logo are removed, is formed and added for picosecond laser in next step
The transparency path of work；
Step C, picosecond laser gets processing sapphire ready and carbon dioxide laser thermal stress is split sapphire：Swash using picosecond
Transparency path described in light device along step B carries out sapphire to get processing ready, and laser dotting runs through the thickness direction of sapphire sheet, beats
Spot diameter is 2~8 μm, and each point spacing is 5~10 μm；It reuses carbon dioxide laser and carries out LINEAR CONTINUOUS heat to getting path ready
Stress sliver, the heat that carbon dioxide laser provides cause the sapphire material between each point to split, and obtain the side containing ink
The sapphire wafer product of frame.
2. method according to claim 1, which is characterized in that the thickness of the sapphire substrate is 0.1~0.6mm, preferably
0.2~0.5mm, the thickness of the film is 0.05~0.8mm, is preferably 0.05~0.2mm；The thickness of the ink layer is
Below 0.08mm.
3. method according to claim 1, which is characterized in that per adjacent between multiple ink logos in step A on film
The spacing of two patterns is more than 0.5mm, preferably 0.8~2mm；And film chip size and sheet when being bonded in preferred steps A
The size of sapphire substrate is identical.
4. method according to claim 1, which is characterized in that make when in step B using carbon dioxide laser linear incision
It is positioned with CCD, power is cut by laser in step B as 7.5~15W, 10~20KHz of laser frequency, cutting speed 15~
25mm/s。
5. method according to claim 1, which is characterized in that the line width of the transparency path formed in step B 0.2mm with
It is interior, preferably within 0.15mm, more preferably within 0.1mm.
6. method according to claim 1, which is characterized in that in step C the laser cutting power of picosecond laser for 7~
20W, 20~60KH of laser frequencyZ, 40~100mm/s of cutting speed.
7. method according to claim 1, which is characterized in that the laser cutting power of carbon dioxide laser is in step C
7.5~15W, 10~20KHz of laser frequency, 15~35mm/s of cutting speed；And defocus mode sliver is used, focal point control is in indigo plant
At 0.1~3mm of upper surface of jewel, at preferably 0.2~1mm.
8. method according to claim 1, which is characterized in that split indigo plant using carbon dioxide laser thermal stress in step C
It carries out 2 circle more than linear scans during jewel to cut to obtain the product, preferably 3~5 circle laser linear scans of progress obtain described
Product.
9. according to any one the method in claim 1~8, which is characterized in that the ink of each ink logo in step A
Area size extends out 0.2~2mm, preferably 0.3 than the size of ink frame in the small pieces sapphire wafer product of final gained
~1mm.
10. according to any one the method in claim 1~9, which is characterized in that the ink of the sapphire wafer product
Frame is in annular shape, and the sapphire wafer product is CCD camera assembly.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109516684A (en) * | 2018-11-22 | 2019-03-26 | 英诺激光科技股份有限公司 | A method of laser cutting optical filter |
| CN109702356A (en) * | 2019-01-09 | 2019-05-03 | 蓝思智能机器人(长沙)有限公司 | A method of laser cutting covering protection film glass |
| CN112291464A (en) * | 2020-10-30 | 2021-01-29 | 维沃移动通信有限公司 | Camera lens manufacturing method, camera lens and electronic equipment |
| CN115504677A (en) * | 2021-06-23 | 2022-12-23 | 江西华派光电科技有限公司 | Method for processing texture on surfaces of glass and sapphire |
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| CN106102986A (en) * | 2016-06-08 | 2016-11-09 | 大族激光科技产业集团股份有限公司 | method and device for cutting sapphire |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109516684A (en) * | 2018-11-22 | 2019-03-26 | 英诺激光科技股份有限公司 | A method of laser cutting optical filter |
| CN109702356A (en) * | 2019-01-09 | 2019-05-03 | 蓝思智能机器人(长沙)有限公司 | A method of laser cutting covering protection film glass |
| CN112291464A (en) * | 2020-10-30 | 2021-01-29 | 维沃移动通信有限公司 | Camera lens manufacturing method, camera lens and electronic equipment |
| CN115504677A (en) * | 2021-06-23 | 2022-12-23 | 江西华派光电科技有限公司 | Method for processing texture on surfaces of glass and sapphire |
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