CN108055790B - A kind of circuit board and preparation method thereof and application - Google Patents
A kind of circuit board and preparation method thereof and application Download PDFInfo
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- CN108055790B CN108055790B CN201711275262.9A CN201711275262A CN108055790B CN 108055790 B CN108055790 B CN 108055790B CN 201711275262 A CN201711275262 A CN 201711275262A CN 108055790 B CN108055790 B CN 108055790B
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- circuit board
- copper film
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0723—Electroplating, e.g. finish plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/104—Using magnetic force, e.g. to align particles or for a temporary connection during processing
Abstract
The present invention relates to a kind of circuit board, its production method and applications.Production method includes: using glass or acrylic as circuit board bearing body；Pass through magnetically controlled sputter method successively the first metallic diaphragm of sputter, the second metallic diaphragm and third metallic diaphragm on the carrier；The first copper film layer is deposited by evaporation coating method on third metallic diaphragm；The second copper film layer is electroplated by aqueous galvanoplastic on the first copper film layer；Wherein, the first metallic diaphragm with a thickness of 10~80nm；The thickness of second metallic diaphragm is not less than the thickness of the first metallic diaphragm, and in 100nm or less；The thickness of third metallic diaphragm is not less than the thickness of the second metallic diaphragm, and in 300nm or less；The thickness of first copper film layer is greater than the thickness of third metallic diaphragm, and in 500nm or less；Second copper film layer with a thickness of 5~100 μm.This method can improve the adhesive force between route and carrier, and the LED circuit board of high current, high penetration degree can be made.
Description
Technical field
The present invention relates to circuit board technology fields more particularly to a kind of circuit board and preparation method thereof and application.
Background technique
Advertisement screen is widely used as a kind of carrier for transmitting information.Light emitting diode (Light Emitting
Diode, LED) advertisement screen is also LED advertisement screen, be it is a kind of arranged using LED array, pass through each diode of control
Light or extinguish to form the electronic equipment of content to display.Compared with conventional ads screen, LED advertisement screen is with its color
It is bright-coloured, dynamic range is wide, brightness is high, the service life is long and it is stable and reliable in work the advantages that become modern mainstream display device, generally
Applied to various places such as square, stadiums, news briefing and securities tradings.
For LED advertisement screen, the quantity of LED lamp bead is The more the better.The quantity of LED lamp bead in unit area is got over
More, the brightness of advertisement screen is higher, color is abundanter.The quantity of LED lamp bead is more, as one of advertisement screen core component
Circuit board will more have excellent performance.The electric current that route on circuit board allows is bigger, the LED lamp bead that can be encapsulated on circuit board
Quantity it is more.LED lamp bead quantity in every square metre of available circuit plate can generally reach P5, and (P5 refers in every square metre
LED lamp bead quantity is 5000).More than P5 standard, the penetrating degree of circuit board is sacrificed larger (since it is desired that arranging on circuit boards
Broader route is just able to satisfy high current), it is even lower to can only achieve 70%.When too many along with LED lamp bead quantity, route holds
Easily fall off from substrate.Therefore, how to produce a kind of high adhesion force, high penetration degree, high current circuit board be always people
The hot spot of research.
Magnetron sputtering belongs to one kind of physical vapour deposition (PVD), is a kind of new technique that functional membrane is formed in matrix surface,
The currently reported production for being used for circuit board.Between the metallic film and substrate sputtered on substrate layer using the technique
Adhesive force it is larger, be not easy to strip off.But, which can only sputter nanoscale thin-layer metal membrane, when thickness of metal film is too thick
When, the low efficiency of magnetron sputtering technique, cost is too high, therefore, using on the circuit board of existing magnetron sputtering technique preparation
Thin, the wide line road can be etched, and thick, narrow route can not be etched.
Board substrate material includes ceramics, organic resin or metal.Using organic resin as the circuit board temperature tolerance of substrate
Difference, it is difficult to bear the high temperature of magnetron sputtering technique, and the coefficient of thermal expansion differences of organic resin, be easy so as to cause metal layer disconnected
It splits.Although can bear high temperature by the circuit board of substrate of ceramics, its surface has very more holes, to be difficult to be formed
The thin and continuous metal layer of thickness.It needs to carry out insulation oxygen to substrate in technique with the circuit board that metal (such as aluminium) is substrate
Change processing, so that processing step is cumbersome.Most importantly, the substrate of above-mentioned material is opaque material, so that circuit
The permeability of plate is poor, and for white light LEDs, it is most important that the luminous flux of output and photochromic, so circuit board is penetrating
The higher the better for property.Obviously, above-mentioned three kinds of substrates are not suitable for the production of LED circuit board.
Summary of the invention
(1) technical problems to be solved
There is a problem of that poor adhesive force, the low and electric current of penetrating degree are small for circuit board made from existing method, the present invention
Be to solve how to be made a kind of high adhesion force, high penetration degree, high current circuit board.
(2) technical solution
In order to solve the above-mentioned technical problems, the present invention provides following technical solutions:
A kind of production method of circuit board, the production method include the following steps:
(1) using glass or acrylic as circuit board bearing body；
(2) on the supporting body by magnetically controlled sputter method successively the first metallic diaphragm of sputter, the second metallic diaphragm and
Third metallic diaphragm；
(3) the first copper film layer is deposited by evaporation coating method on the third metallic diaphragm；
(4) the second copper film layer is electroplated by acid electroplating method on first copper film layer；
Wherein, first metallic diaphragm with a thickness of 10~80nm；The thickness of second metallic diaphragm is not less than institute
The thickness of the first metallic diaphragm is stated, and in 100nm or less；The thickness of the third metallic diaphragm is not less than second metal film
The thickness of layer, and in 300nm or less；The thickness of first copper film layer be greater than the third metallic diaphragm thickness, and
500nm or less；Second copper film layer with a thickness of 5~100 μm.
Preferably: the metal of first metallic diaphragm is one of copper, chromium, nickel, titanium, molybdenum or a variety of；
The metal of second metallic diaphragm is one of copper, chromium, nickel, titanium, molybdenum or a variety of；
The metal of the third metallic diaphragm is copper and/or nickel.
Preferably:
First metallic diaphragm with a thickness of 10~50nm；
Second metallic diaphragm with a thickness of 50~100nm；
The third metallic diaphragm with a thickness of 100~300nm；
First copper film layer with a thickness of 300~500nm；
Second copper film layer with a thickness of 50~100 μm.
Preferably: the process conditions of the magnetron sputtering are as follows: 2~10kw/cm of shielding power supply power density2, argon pressure
0.2~1.0Pa, 150~300 DEG C of circuit board carrier temperature；
The process conditions of the vapor deposition are as follows: 0.05~0.10 pa of vacuum degree, 150~300 DEG C of circuit board carrier temperature；With/
Or
The aqueous electroplating technique condition are as follows: pH value 3~6, CuSO4Concentration is 60~90g/L, H2SO4Concentration is 170
~210g/L, Cl—Concentration is 30~70ppm, and temperature is 20~30 DEG C.
Preferably: the process conditions of the first metallic diaphragm described in magnetic control sputtering plating are as follows: 2~5kw/ of shielding power supply power density
cm2, 0.6~1.0 pa of argon pressure, 150~300 DEG C of glass carrier temperature；
The process conditions of first metallic diaphragm described in magnetic control sputtering plating are as follows: 4~8kw/cm of shielding power supply power density2, argon gas
0.3~0.6 pa of pressure, 150~300 DEG C of glass carrier temperature；
The process conditions of first metallic diaphragm described in magnetic control sputtering plating are as follows: 3~10kw/cm of shielding power supply power density2, argon gas
0.2~1.0 pa of pressure, 150~300 DEG C of glass carrier temperature.
Preferably: the production method is after step (4) further include: (5) makes circuit pattern；
The step (5) carries out as follows:
(a) coating photoresist；
(b) satisfactory film route is designed；
(c) it exposes；
(d) develop；
(e) it etches；With
(f) degumming.
Preferably: the circuit board bearing body with a thickness of 0.2~8.0mm.
A kind of circuit board, is made of production method described in any of the above-described.
Preferably, the line thicknesses of the circuit board are not less than 50 μm, and line width is not more than 20 μm, and penetrating degree is greater than
90%, the LED lamp bead quantity in every square metre is at 10,000 or more, and brightness is more than 7000 lumens.
Application of the circuit board in LED advertisement screen.
(3) beneficial effect
Above-mentioned technical proposal of the invention has the advantages that
The present invention using magnetron sputtering, vacuum evaporation and aqueous plating in conjunction with technique make circuit board, effectively mention
Adhesive force between high circuit and circuit board carrier, adhesive force can accomplish that 2 grade standards (are designed according to ISO2409-1992 standard and made
Make cross-cut tester testing standard), high-intensitive adhesive force can provide thick but also thin line manufacturing process not only for circuit board.Using this
Structure and technique can make route greater than 50 microns of thickness, and 20 microns of wide routes, thick route is high current and high density
LED light provides basis, and 20 microns of thin width can provide high penetration degree and daylighting effect for glass or acrylic LED circuit board.
Penetrating degree can be produced at present according to the technique and be greater than 90% (in every square metre can daylighting or light transmission ratio), in every square metre
LED lamp bead quantity can reach 10,000 (P10 standards), and brightness reaches 7000 lumens.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of circuit board provided by the invention；
In figure: 1: substrate；2: the first metallic diaphragms；3: the second metallic diaphragms；4: third metallic diaphragm；5: the first copper films
Layer；6: the second copper film layers.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the embodiment of the present invention, to this hair
Bright technical solution is clearly and completely described.Obviously, described embodiment is a part of the embodiments of the present invention, and
The embodiment being not all of.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work
Under the premise of every other embodiment obtained, shall fall within the protection scope of the present invention.
The first, the present invention provides a kind of production method of circuit board, the production method includes the following steps:
(1) using glass or acrylic as circuit board bearing body (also referred to as substrate).It is compared to traditional organic tree
Rouge or ceramics, glass or acrylic are transparent, therefore the circuit board of glass or acrylic substrate possesses light transmission function, in building
Wall is outer or indoor billboard application on, daytime can normal daylighting, it is equivalent using the vision of window not influence building internal staff
Fruit, while can be used as advertisement again and showing, advertisement is played, building external staff can clearly see ad content.Circuit board bearing
The thickness of body can be 0.2~8.0mm, for example, can be 0.2mm, 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm or 8mm.
In order to further increase the adhesive force between circuit board bearing body and circuit, the jet-plating metallization film on the supporting body
Before layer, the supporting body is pre-processed.The pretreatment in turn includes the following steps: using alkalescent cleaning solution (pH
It is 7.1~7.9) or weak acid pickling liquid (pH is 6.1~6.9) spray cleans, round brush cleans, high purity water rinses, air-dries and dries
It is dry.
(2) on the supporting body by magnetically controlled sputter method successively the first metallic diaphragm of sputter, the second metallic diaphragm and
Third metallic diaphragm.
(3) the first copper film layer is deposited by evaporation coating method on the third metallic diaphragm.
(4) the second copper film layer is electroplated by acid electroplating method on first copper film layer.
The metal of first metallic diaphragm is one of copper, chromium, nickel, titanium, molybdenum or a variety of；Second metallic diaphragm
Metal be one of copper, chromium, nickel, titanium, molybdenum or a variety of；The metal of the third metallic diaphragm is copper and/or nickel.It is preferred that
Ground, first metallic diaphragm with a thickness of 10~80nm；The thickness of second metallic diaphragm is not less than first metal
The thickness of film layer, and in 100nm or less；The thickness of the third metallic diaphragm is not less than the thickness of second metallic diaphragm,
And in 300nm or less；The thickness of first copper film layer is greater than the thickness of the third metallic diaphragm, and in 500nm or less；Institute
State the second copper film layer with a thickness of 5~100 μm.It is further preferred that first metallic diaphragm with a thickness of 10~50nm (example
Such as can be 10~30nm, 20~35nm, 30~50nm, 25~50nm, specifically for example, 10nm, 20nm, 30nm, 40nm or
50nm)；Second metallic diaphragm with a thickness of 50~100nm (such as can be 50~80nm, 60~100nm, specifically for example
For 50nm, 60nm, 70nm, 80nm, 90nm or 100nm)；The third metallic diaphragm (such as can with a thickness of 100~300nm
Think 100~200nm, 150~300nm, specifically for example, 100nm, 150nm, 200nm, 250nm or 300nm)；Described first
Copper film layer with a thickness of 300~500nm (such as can be 300~400nm, 200~500nm, specifically for example, 300nm,
400nm, 500nm or 600nm)；Second copper film layer with a thickness of 50~100 μm (such as can for 50~80 μm, 60~
100 μm, specific is, for example, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm).
The present invention using magnetron sputtering, vacuum evaporation and aqueous plating in conjunction with technique make circuit board.First in base
It is improved between circuit and substrate by the metallic diaphragm of magnetron sputtering technique sputter nanometer grade thickness as transition of stress layer on plate
Adhesive force.But sputtered layer if too it is thick if (such as more than 300nm), stress will increase considerably, so as to cause glass
Glass substrate or acrylic substrate deformation, and efficiency also will be greatly reduced.On the other hand, since the present invention is the sputter on substrate
Multiple layer metal film layer, thickness are too thin also infeasible.Because when sputter multiple layer metal film, the metal film layer surface that is previously formed
Again when jet-plating metallization film layer, high energy particle carries out energy conversion in previous metal film layer surface, generates higher thermal energy.This
One energy quickly transmits between substrate and metallic diaphragm, not only will affect the adhesive force between substrate and metallic diaphragm, goes back shadow
Ring the binding force between multiple layer metal film layer.When metallic diaphragm is too thin, the adhesive force and metallic diaphragm of metallic diaphragm and substrate
Between binding force can all decline, cause the quantity of installable LED lamp bead on route few.Therefore, when sputter metal multilayer film
When layer, the present invention passes through the thermal expansion coefficient mistake of the thickness and different metal material that control every layer of metallic diaphragm according to the method described above
Gradient is crossed, so as to reduce influence of the sputter multiple layer metal film layer to adhesive force and inter-layer bonding force, it is ensured that in glass base
On the basis of plate or acrylic substrate will not deform, the higher adhesive force for meeting and needing is obtained.The present invention passes through vacuum evaporation
Technique is in the surface of transition of stress layer attachment copper film as seed layer.When the thickness of seed layer is too big, be located at transition of stress layer and
Seed layer between the water conservancy diversion body layer of subsequent plating is easy to appear cracking because being heat-shrinked, but also can cause glass substrate or
The Light deformation of acrylic substrate.Therefore, the present invention is by the thickness control of seed layer in 300~500nm.Due to the thickness of seed layer
Spend larger, using magnetron sputtering technique sputter seed layer, efficiency is too low.According to traditional electroplating technology plating seed layer
If, for the film layer structure of plating seed layer than more loose, loose structure is unfavorable for the adhesive force between transition of stress layer.Cause
This, seed layer is deposited using evaporation process in the present invention.Finally, the present invention passes through acid electroplating technique in the electroplating surface of seed layer
One layer of copper film layer is as water conservancy diversion body layer.Since the adhesive force between substrate and circuit is big, the thickness highest of the copper film layer
It can reach 100 μm, convenient for etching high current, the circuit pattern of high penetration degree.Moreover, the speed of electroplating technology is fast, it is high-efficient, at
This reduction, stress can be smaller compared to sputter and vapor deposition, are suitble to prepare the biggish metallic diaphragm of thickness.If being steamed using evaporation process
Water conservancy diversion body layer is plated, the copper film that 50 μ m thicks are deposited needs 2 more than hour low output is at high cost, and can cause glass
Basic or acrylic substrate Light deformation.
Preferably, the process conditions of the magnetron sputtering are as follows: 2~10kw/cm of shielding power supply power density2, argon pressure
0.2~1.0Pa, 150~300 DEG C of circuit board carrier temperature.It is further preferred that the magnetron sputtering of first metallic diaphragm
Process conditions are as follows: 2~5kw/cm of shielding power supply power density2, 0.6~1.0Pa of argon pressure, circuit board carrier temperature is 150
~200 DEG C；The process conditions of the magnetron sputtering of second metallic diaphragm are as follows: 4~8kw/cm of shielding power supply power density2, argon
0.3~0.6Pa of atmospheric pressure, circuit board carrier temperature are 150~200 DEG C；The technique of the magnetron sputtering of the third metallic diaphragm
Condition are as follows: 3~10kw/cm of shielding power supply power density2, 0.2~1.0Pa of argon pressure, circuit board carrier temperature be 200~
300℃。
Preferably, the process conditions of the vapor deposition are as follows: 0.05~0.10 pa of vacuum degree, circuit board carrier temperature 150~300
℃。
Preferably, the process conditions of the acid electroplating are as follows: pH value 3~6, CuSO4Concentration is 60~90g/L, H2SO4It is dense
Degree is 170~210g/L, Cl—Concentration is 30~70ppm, and temperature is 20~30 DEG C.
In some embodiments, the production method is after step (4) further include: (5) circuit obtained in step (4)
Circuit pattern is made on plate.The step (5) carries out as follows:
(a) the coating photoresist layer on the water conservancy diversion body layer of circuit board: with a thickness of 10~20 microns；
(b) satisfactory film route is designed on photoresist layer；
(c) have the photoresist layer of film route to be exposed design: exposure energy is preferably 30~70mj/cm2；
(d) photoresist layer through overexposure is developed, the development can use following process conditions: developing time
It can be 30~50s, temperature is 25~40 DEG C, and developer solution is the NaCO that concentration is 0.8~1.2wt%3.H2O；
(e) circuit board obtained to step (4) is etched, and the etching can use following process conditions: etching solution
Copper ion concentration is 100~150g/L, and chlorine ion concentration is 150~200g/L, and temperature is 40~70 DEG C, and etching line thickness is reachable
To 50 μm or more, width can reach 20 μm or less；With
(f) degumming will be carried out through overetched circuit board: degumming can be carried out using NaOH.
The second, the present invention provides a kind of circuit boards, are made of above-mentioned production method.As shown in Figure 1, the circuit board
Including substrate 1, the first metallic diaphragm 2, the second metallic diaphragm 3, third metallic diaphragm 4, the first copper film layer 5 and the second copper film layer 6.
Preferably, the line thicknesses of the circuit board are not less than 50 μm, and line width is not more than 20 μm, and penetrating degree is greater than 90%, often put down
LED lamp bead quantity in square rice is at 10,000 or more, and brightness is more than 7000 lumens.Above if clear can not also change.
Third, the application the present invention provides foregoing circuit plate in LED advertisement screen.
It is several embodiments that the present invention enumerates below.
Embodiment 1
(1) using glass plate as circuit carrier, the glass plate is successively sprayed through weak base cleaning solution (pH 7.1) clear
It washes, round brush cleaning, high purity water flushing, air-dried and drying and processing, it is spare.
(2) on a surface of glass plate by magnetron sputtering technique sputter copper film 1, with a thickness of 10nm, process conditions are as follows: splash
Radio source power density 2kw/cm2, argon pressure 0.6Pa, circuit board carrier temperature is 150 DEG C；
On the surface of copper film 1 by magnetron sputtering technique sputter copper film 2, with a thickness of 50nm, process conditions are as follows: shielding power supply
Power density 4kw/cm2, argon pressure 0.3Pa, circuit board carrier temperature is 200 DEG C；
On the surface of copper film 2 by magnetron sputtering technique sputter copper film 3, with a thickness of 100nm, process conditions are as follows: sputtering electricity
Source power density 8kw/cm2, argon pressure 0.6Pa, circuit board carrier temperature is 200 DEG C.
(3) copper film 4 is deposited by vacuum evaporation process on the surface of copper film 3, with a thickness of 300nm, process conditions are as follows: vacuum
0.05 pa is spent, glass carrier temperature is 300 DEG C.
(4) on the surface of copper film 4 by acid electroplating technique electroplating copper film 5, with a thickness of 50 μm, process conditions are as follows: pH=
3, CuSO4Concentration is 60g/L, H2SO4Concentration is 170g/L, Cl—Concentration is 30ppm, and temperature is 20 DEG C.
(5) coating photoresist, with a thickness of 10 microns；According to client's needs, the film route to meet the requirements of the customers is designed, is pacified
It is exposed loaded on exposure machine, exposure energy 30mj/cm2；Enter developing procedure, developing time 30s, temperature after completing exposure
Degree is 25 DEG C, and developer solution is the NaCO of concentration 0.8wt%3.H2O；Enter etching work procedure after completing development, etching solution copper ion is dense
100g/L, chlorine ion concentration 150g/L are spent, 40 DEG C of temperature, etching line width is 20 microns, with a thickness of 50 microns；It is laggard to complete etching
The de- photoetching glue process of row, carries out degumming using NaOH, obtains circuit board.
Embodiment 2
(1) using glass plate as circuit carrier, the glass plate is successively sprayed through weak acid pickling liquid (pH 6.2)
Cleaning, round brush cleaning, high purity water flushing, air-dried and drying and processing, it is spare.
(2) on a surface of glass plate by magnetron sputtering technique sputter copper film 1, with a thickness of 20nm, process conditions are as follows: splash
Radio source power density 3kw/cm2, argon pressure 0.7Pa, circuit board carrier temperature is 150 DEG C；
On the surface of copper film 1 by magnetron sputtering technique sputter copper film 2, with a thickness of 60nm, process conditions are as follows: shielding power supply
Power density 5kw/cm2, argon pressure 0.4Pa, circuit board carrier temperature is 200 DEG C；
On the surface of copper film 2 by magnetron sputtering technique sputter copper film 3, with a thickness of 150nm, process conditions are as follows: sputtering electricity
Source power density 0.2kw/cm2, argon pressure 1.0Pa, circuit board carrier temperature is 200 DEG C.
(3) copper film 4 is deposited by vacuum evaporation process on the surface of copper film 3, with a thickness of 350nm, process conditions are as follows: vacuum
0.10 pa is spent, glass carrier temperature is 300 DEG C.
(4) on the surface of copper film 4 by acid electroplating technique electroplating copper film 5, with a thickness of 60 μm, process conditions are as follows: pH=
6, CuSO4Concentration is 90g/L, H2SO4Concentration is 210g/L, Cl—Concentration is 70ppm, and temperature is 30 DEG C.
(5) coating photoresist, with a thickness of 10 microns；According to client's needs, the film route to meet the requirements of the customers is designed, is pacified
It is exposed loaded on exposure machine, exposure energy 70mj/cm2；Enter developing procedure, developing time 50s, temperature after completing exposure
Degree is 40 DEG C, and developer solution is the NaCO of concentration 1.2wt%3.H2O；Enter etching work procedure after completing development, etching solution copper ion is dense
150g/L is spent, chlorine ion concentration 200g/L, temperature 70 C, etching line width is 20 microns, with a thickness of 50 microns；It is laggard to complete etching
The de- photoetching glue process of row, carries out degumming using NaOH, obtains circuit board.
Embodiment 3
Substantially the same with embodiment 1, difference includes:
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 1 are as follows: shielding power supply power density 3kw/cm2, argon gas
Pressure 0.7Pa, circuit board carrier temperature are 150 DEG C.
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 2 are as follows: shielding power supply power density 5kw/cm2, argon gas
Pressure 0.4Pa, circuit board carrier temperature are 200 DEG C.
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 3 are as follows: shielding power supply power density 6kw/cm2, argon gas
Pressure 1.0Pa, circuit board carrier temperature are 200 DEG C.
By adjusting the time of vacuum evaporation and acid electroplating, the copper film 4 and copper film 5 of different-thickness are obtained.
The thickness of each film layer is specifically shown in Table 1.
Embodiment 4
Substantially the same with embodiment 1, difference includes:
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 1 are as follows: shielding power supply power density 4kw/cm2, argon gas
Pressure 0.8Pa, circuit board carrier temperature are 150 DEG C.
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 2 are as follows: shielding power supply power density 6kw/cm2, argon gas
Pressure 0.5Pa, circuit board carrier temperature are 200 DEG C.
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 3 are as follows: shielding power supply power density 7kw/cm2, argon gas
Pressure 0.8Pa, circuit board carrier temperature are 200 DEG C.
By adjusting the time of vacuum evaporation and acid electroplating, the copper film 4 and copper film 5 of different-thickness are obtained.
The thickness of each film layer is specifically shown in Table 1.
Embodiment 5
Substantially the same with embodiment 1, difference includes:
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 1 are as follows: shielding power supply power density 4.5kw/cm2, argon
Atmospheric pressure 0.9Pa, circuit board carrier temperature are 200 DEG C.
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 2 are as follows: shielding power supply power density 6.5kw/cm2, argon
Atmospheric pressure 0.6Pa, circuit board carrier temperature are 200 DEG C.
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 3 are as follows: shielding power supply power density 3kw/cm2, argon gas
Pressure 1.0Pa, circuit board carrier temperature are 200 DEG C.
By adjusting the time of vacuum evaporation and acid electroplating, the copper film 4 and copper film 5 of different-thickness are obtained.
The thickness of each film layer is specifically shown in Table 1.
Embodiment 6
Substantially the same with embodiment 1, difference includes:
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 1 are as follows: shielding power supply power density 5kw/cm2, argon gas
Pressure 1.0Pa, circuit board carrier temperature are 150 DEG C.
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 2 are as follows: shielding power supply power density 8kw/cm2, argon gas
Pressure 0.5Pa, circuit board carrier temperature are 200 DEG C.
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 3 are as follows: shielding power supply power density 8kw/cm2, argon gas
Pressure 1.0Pa, circuit board carrier temperature are 200 DEG C.
By adjusting the time of vacuum evaporation and acid electroplating, the copper film 4 and copper film 5 of different-thickness are obtained.
The thickness of each film layer is specifically shown in Table 1.
Embodiment 7
Substantially the same with embodiment 1, difference includes:
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 1 are as follows: shielding power supply power density 5kw/cm2, argon gas
Pressure 1.0Pa, circuit board carrier temperature are 150 DEG C.
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 2 are as follows: shielding power supply power density 6kw/cm2, argon gas
Pressure 0.6Pa, circuit board carrier temperature are 200 DEG C.
Pass through the process conditions of magnetron sputtering technique jet-plating metallization film 3 are as follows: shielding power supply power density 8kw/cm2, argon gas
Pressure 0.9Pa, circuit board carrier temperature are 200 DEG C.
By adjusting the time of vacuum evaporation and acid electroplating, the copper film 4 and copper film 5 of different-thickness are obtained.
The thickness of each film layer is specifically shown in Table 1.
In addition to above-described embodiment, the present invention has also made contrast sample, and production method is shown in embodiment 8 to embodiment 12.
Embodiment 8
(1) prepared substrate: with embodiment 1.
(2) magnetic control sputtering plating: with embodiment 1.
(3) acid electroplating: with embodiment 1.
(4) circuit pattern is made: with embodiment 1.
Embodiment 9
(1) prepared substrate: with embodiment 1.
(2) magnetic control sputtering plating: the first metallic diaphragm with a thickness of 100nm, the second metallic diaphragm with a thickness of 10nm, third gold
Belong to film layer with a thickness of 30nm.
(3) vacuum evaporation: with embodiment 1.
(4) acid electroplating: with embodiment 1.
(5) circuit pattern is made: with embodiment 1.
Embodiment 10
(1) prepared substrate: with embodiment 1.
(2) magnetic control sputtering plating: the first metallic diaphragm with a thickness of 5nm, the second metallic diaphragm with a thickness of 50nm, third metal
Film layer with a thickness of 30nm.
(3) vacuum evaporation: with embodiment 1.
(4) acid electroplating: with embodiment 1.
(5) circuit pattern is made: with embodiment 1.
Embodiment 11
(1) prepared substrate: with embodiment 1.
(2) magnetic control sputtering plating: with embodiment 1.
(3) vacuum evaporation: copper film thickness is 1 μm.
(4) acid electroplating: with embodiment 1.
(5) circuit pattern is made: with embodiment 1.
Embodiment 12
(1) prepared substrate: with embodiment 1.
(2) magnetic control sputtering plating: magnetically controlled sputter method sputter layers of chrome, nickel layer and ambrose alloy are passed sequentially through on a surface of a substrate and is closed
Layer gold.Sputtering time is 5min, and sputter electric current is unsuitable too small, in order to avoid efficiency is too low, is set as 5A, sputter gas pressure is less than
1atm, gas are Ar gas, and target in order to avoid the intensity of sputter is inadequate, should not be set as 5cm, sputter gas too far at a distance from substrate
Flow is 8 × 10-3torr。
(3) magnetron sputtering conductive copper layer: 5 μm of sputter conductive copper layer on albata layer, sputtering time 30min splash
Plating electric current is 5A, and sputter gas pressure is less than 1atm, and gas is Ar gas, and target is 5cm, sputter gas flow at a distance from substrate
It is 8 × 10-3torr。
(4) it is electroplated: being electroplated on conductive copper layer according to the design requirement of copper thickness and thicken layers of copper, electroplating current 1A,
Electroplating time is 2h.
(5) circuit pattern is made: with embodiment 1.
Circuit board made from above-mentioned each embodiment is detected, detection project includes: (1) etching line width and thickness
Degree.(2) cross-cut tester test the adhesive force between route and substrate: is carried out according to ISO2409-1992.(3) penetrating degree detection: meter
Calculate the ratio of light-permeable in unit area.(4) brightness of the LED lamp bead quantity and LED light in unit area.Testing result is shown in
Table 1.
In the identical situation of etching line width and thickness, detect circuit board made from comparative example: route and substrate it
Between adhesive force, LED lamp bead quantity and LED light in unit area brightness.Testing result is shown in Table 1.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (8)
1. a kind of production method of circuit board, which is characterized in that the production method includes the following steps:
(1) using glass or acrylic as circuit board bearing body, the circuit board bearing body with a thickness of 0.2~8.0mm；
(2) pass through magnetically controlled sputter method successively the first metallic diaphragm of sputter, the second metallic diaphragm and third on the supporting body
Metallic diaphragm；
(3) the first copper film layer is deposited by vacuum deposition method on the third metallic diaphragm；
(4) the second copper film layer is electroplated by acid electroplating method on first copper film layer；
Wherein, first metallic diaphragm with a thickness of 10~50nm；Second metallic diaphragm with a thickness of 50~100nm；
The third metallic diaphragm with a thickness of 100~300nm；First copper film layer with a thickness of 300~500nm and be greater than described
The thickness of third metallic diaphragm；Second copper film layer with a thickness of 50~100 μm.
2. manufacturing method according to claim 1, it is characterised in that: the metal of first metallic diaphragm be copper, chromium,
One of nickel, titanium, molybdenum are a variety of；
The metal of second metallic diaphragm is one of copper, chromium, nickel, titanium, molybdenum or a variety of；
The metal of the third metallic diaphragm is copper and/or nickel.
3. manufacturing method according to claim 1, it is characterised in that: the process conditions of the magnetron sputtering are as follows: sputtering electricity
2~10kw/cm of source power density2, 0.2~1.0Pa of argon pressure, 150~300 DEG C of circuit board carrier temperature；
The process conditions of the vapor deposition are as follows: 0.05~0.10 pa of vacuum degree, 150~300 DEG C of circuit board carrier temperature；And/or
The process conditions of the acid electroplating are as follows: pH value 3~6, CuSO4Concentration is 60~90g/L, H2SO4Concentration be 170~
210g/L, Cl—Concentration is 30~70ppm, and temperature is 20~30 DEG C.
4. production method according to claim 3, it is characterised in that: the technique item of the first metallic diaphragm described in magnetic control sputtering plating
Part are as follows: 2~5kw/cm of shielding power supply power density2, 0.6~1.0 pa of argon pressure, 150~200 DEG C of glass carrier temperature；
The process conditions of second metallic diaphragm described in magnetic control sputtering plating are as follows: 4~8kw/cm of shielding power supply power density2, argon pressure
0.3~0.6 pa, 150~200 DEG C of glass carrier temperature；
The process conditions of third metallic diaphragm described in magnetic control sputtering plating are as follows: 3~10kw/cm of shielding power supply power density2, argon pressure
0.2~1.0 pa, 200~300 DEG C of glass carrier temperature.
5. production method according to any one of claims 1 to 4, it is characterised in that: the production method step (4) it
Afterwards further include: (5) make circuit pattern；
The step (5) carries out as follows:
(a) coating photoresist；
(b) satisfactory film route is designed；
(c) it exposes；
(d) develop；
(e) it etches；With
(f) degumming.
6. a kind of circuit board, which is characterized in that be made of any one of claim 1 to 5 production method.
7. circuit board according to claim 6, which is characterized in that the line thicknesses of the circuit board are not less than 50 μm, line
Degree of having a lot of social connections is not more than 20 μm, and penetrating degree is greater than 90%, and the LED lamp bead quantity in every square metre is at 10,000 or more, and brightness is 7000
It is more than lumen.
8. application of the circuit board described in claim 6 or 7 in LED advertisement screen.
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| CN110185945B (en) * | 2019-05-27 | 2021-08-10 | 深圳市致竑光电有限公司 | High-density luminescent glass |
| CN110634418B (en) * | 2019-11-05 | 2022-11-11 | 京东方科技集团股份有限公司 | Driving backboard, manufacturing method of driving backboard, mother board of driving backboard, display panel and manufacturing method of liquid crystal antenna |
| CN112291917B (en) * | 2020-10-15 | 2021-05-14 | 深圳市顺华智显技术有限公司 | Flexible circuit board and manufacturing method thereof |
| CN112203427B (en) * | 2020-10-15 | 2021-06-29 | 深圳市顺华智显技术有限公司 | Circuit board and method for preventing circuit from being oxidized and application thereof |
| CN115576136B (en) * | 2022-10-28 | 2023-04-14 | 陈旺寿 | Glass-based backlight plate for Mini LED display and manufacturing method |
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| JPH11158613A (en) * | 1997-12-01 | 1999-06-15 | Canon Inc | Electrode substrate and production of the electrode substrate |
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