CN108054259A - A kind of LED chip and preparation method thereof - Google Patents
A kind of LED chip and preparation method thereof Download PDFInfo
- Publication number
- CN108054259A CN108054259A CN201711331483.3A CN201711331483A CN108054259A CN 108054259 A CN108054259 A CN 108054259A CN 201711331483 A CN201711331483 A CN 201711331483A CN 108054259 A CN108054259 A CN 108054259A
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- Prior art keywords
- substrate
- led chip
- micro
- layer
- semiconductor layer
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- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 239000002086 nanomaterial Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000012780 transparent material Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 5
- 238000007373 indentation Methods 0.000 abstract description 4
- 229910002601 GaN Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Present invention is disclosed a kind of LED chips and preparation method thereof, wherein, the LED chip includes the first substrate and the second substrate and epitaxial layer that are sequentially formed on the first substrate, epitaxial layer includes the first semiconductor layer, luminescent layer and the second semiconductor layer that are sequentially formed on substrate, first substrate and the second substrate are made by transparent material, the one side surface indentation of first substrate and the second substrate attaching is formed with multiple micro-nano structures, and the thickness of the first substrate is more than the thickness of the second substrate.These concave micro-nano structures can reflect the light incided into substrate, return it to the light direction of needs, improve light extraction efficiency, and its manufacture craft is simple, can effectively control the cost of manufacture of LED chip.
Description
Technical field
The invention belongs to LED field of luminescent technology, and in particular to a kind of LED chip and preparation method thereof.
Background technology
Conventional incandescent energy consumption is high, short life, in today that global resources are in short supply, forbids giving birth to by national governments gradually
Production, substitute products are electronic energy-saving lamps therewith, although electronic energy-saving lamp improves energy-saving effect, but due to the use of many pollutions
The heavy metal element of environment, and run counter to the main trend of environmental protection.With LED technology high speed development LED illumination gradually into
For the only choosing of novel green illumination.LED principle of luminosity, energy-saving and environmental protection level on all be far superior to traditional lighting production
Product.
It is its luminous efficiency to restrict one of bottleneck that LED further develops at present, theoretically uses blue LED excited yellow
The luminous efficiency that fluorescent powder obtains white light is that every watt of 300 multithread are bright, but in actual application, the luminous effect of LED chip reality
Rate probably only 150 lumens or so, a key factor for restricting LED chip luminous efficiency be exactly from the light that active region is sent without
Method escapes inside LED chip.In the prior art, in order to improve the light extraction efficiency of LED chip, usually in the lower section of substrate
Reflectance coating or speculum are set or the catoptric arrangement being made of cavity is formed in substrate using the method for laser ablation,
In first method, light is needed before by reflectance coating or speculum reflection by multiple contact interfaces, this can cause the pole of light
Lossy；And the fabrication process condition of second method is complicated, and the manufacture cost of LED chip can be caused to greatly increase.
The content of the invention
One embodiment of the application provides a kind of LED chip, can improve the light extraction efficiency of LED chip, and manufacture craft
Simply, which includes：
First substrate and the second substrate and epitaxial layer being sequentially formed on first substrate, the epitaxial layer include
The first semiconductor layer, luminescent layer and the second semiconductor layer being sequentially formed on the substrate, first substrate and the second lining
Bottom is made by transparent material, and the one side surface indentation of first substrate and second substrate attaching is formed with multiple micro-nano knots
Structure, the thickness of first substrate are more than the thickness of second substrate.
In one embodiment, the micro-nano structure is round bottom shape or back taper.
In one embodiment, first substrate and the second substrate are made by identical material.
In one embodiment, first substrate and the second substrate are connected by Direct Bonding technique.
In one embodiment, the thickness ratio of first substrate and the second substrate is 10:1~8:1.
One embodiment of the application also provides a kind of production method of LED chip, and this method includes：
S1, multiple concave micro-nano structures are formed by etching in a side surface of the first substrate；
S2, the second substrate is connected to a side surface of first substrate with micro-nano structure；
S3, make the first semiconductor layer successively in a side surface of second substrate away from first substrate, shine
LED chip is made in layer and the second semiconductor layer.
In one embodiment, step S1 is specifically included, and is protected in the edge of one side surface of the first substrate, and not by
The surface of first substrate of protection forms multiple concave micro-nano structures by etching.
In one embodiment, the method is additionally included in form the micro-nano structure after remove one side surface of the first substrate
Protection, and by the second substrate by way of Direct Bonding be not etched region on a side surface of first substrate
Connection.
Compared with prior art, the technical solution of the application has the advantages that：
By the side surface for setting the first substrate and the second substrate that are connected to each other, the first substrate and the second substrate attaching
Recess is formed with multiple micro-nano structures, and the thickness of first substrate is more than the thickness of second substrate, these are concave micro-
Micro-nano structure can reflect the light incided into substrate, return it to the light direction of needs, improve light extraction efficiency, system
Make simple for process, can effectively control the cost of manufacture of LED chip.
Description of the drawings
Fig. 1 is the structure diagram of LED chip in one embodiment of the application；
Fig. 2 is the structure diagram of LED chip in the another embodiment of the application.
Specific embodiment
The application is described in detail below with reference to specific embodiment shown in the drawings.But these embodiments are simultaneously
The application is not limited, structure that those of ordinary skill in the art are made according to these embodiments, method or functionally
Conversion is all contained in the protection domain of the application.
Join Fig. 1, introduce the LED chip 100 of one specific embodiment of the application.In the present embodiment, the LED chip
100 include the first substrate 11, the second substrate 12 and epitaxial layer 20.
In the present embodiment, the first substrate 11 and the second substrate 12 are made by transparent material.Epitaxial layer 20 is included successively
The first semiconductor layer 21,22 and second semiconductor layer 23 of luminescent layer being formed on the second substrate 12.In one embodiment, the first half
Conductor layer 21 is gallium nitride layer, including nitride buffer layer 211, the undoped gallium nitride layer being sequentially formed on substrate 10
212 and doping type gallium nitride layer 213, luminescent layer 22 is multiple quantum well layer, and the second semiconductor layer 23 is doping type gallium nitride layer.
Wherein, when the doped gallium nitride layer 213 in the first semiconductor layer 21 is n-type doping, nitridation is adulterated in the second semiconductor layer 23
Gallium layer adulterates for p-type；Conversely, when the doped gallium nitride layer 213 in the first semiconductor layer 21 is adulterated for p-type, the second semiconductor
Doped gallium nitride layer is n-type doping in layer 23.
First substrate 11 and the one side surface indentation of the second substrate 12 fitting are formed with multiple micro-nano structures 111, and first
The thickness of substrate 11 is more than the thickness of the second substrate 12.These micro-nano structures 111 can reflect the light being incident in substrate
Light direction is returned back out, also, due to the thinner thickness of opposite first substrate 11 of the thickness of the second substrate 12, without going past mistake
Long reflection path, reduces optical energy loss.
Join Fig. 1 and Fig. 2, in some embodiments, the micro-nano structure 111 can be round bottom shape or back taper.Certainly,
In the embodiment of other replacements, which may be arranged as other suitable shapes, embodiment given here
It is simply exemplary, and and it is nonrestrictive, others that those skilled in the art make the micro-nano structure 111 are simple to be become
Within the form of changing should ought belong to the scope of protection of the present invention.
In one embodiment, 11 and second substrate 12 of the first substrate is made by identical material.
In one embodiment, first substrate 11 is connected with the second substrate 12 by Direct Bonding technique, can so be kept away
Exempt to introduce excessive dielectric layer, so as to increase loss when light is propagated in the substrate..
In one embodiment, the thickness ratio of 11 and second substrate 12 of the first substrate is 10:1~8:1.
One embodiment of the invention also provides a kind of production method of LED chip 100, and this method includes：
S1, multiple concave micro-nano structures are formed by etching in a side surface of the first substrate；
S2, the second substrate is connected to a side surface of first substrate with micro-nano structure；
S3, make the first semiconductor layer successively in a side surface of second substrate away from first substrate, shine
LED chip is made in layer and the second semiconductor layer.
In one embodiment, step S1 is specifically included, and is protected in the edge of one side surface of the first substrate, and not by
The surface of first substrate of protection forms multiple concave micro-nano structures by etching.
In one embodiment, the method is additionally included in form the micro-nano structure after remove one side surface of the first substrate
Protection, and by the second substrate by way of Direct Bonding be not etched region on a side surface of first substrate
Connection.
The present invention is had the advantages that by the above embodiment：
By setting the first substrate 11 and the second substrate 12 that are connected to each other, the first substrate 11 is bonded with the second substrate 12
One side surface indentation is formed with multiple micro-nano structures, and the thickness of the first substrate 11 is more than the thickness of the second substrate 12, these recess
Micro-nano structure the light incided into substrate can be reflected, return it to the light direction of needs, improve light extraction efficiency,
Its manufacture craft is simple, can effectively control the cost of manufacture of LED chip.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
For bright book as an entirety, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can
With the other embodiment of understanding.
Those listed above it is a series of be described in detail only for the application feasibility embodiment specifically
Bright, they are not to limit the protection domain of the application, all equivalent implementations made without departing from the application skill spirit
Or change should be included within the protection domain of the application.
Claims (8)
1. a kind of LED chip, which is characterized in that including the first substrate and the second lining being sequentially formed on first substrate
Bottom and epitaxial layer, the epitaxial layer includes the first semiconductor layer being sequentially formed on the substrate, luminescent layer and the second half is led
Body layer, first substrate and the second substrate are made by transparent material, first substrate and the one of second substrate attaching
Side surface recess is formed with multiple micro-nano structures, and the thickness of first substrate is more than the thickness of second substrate.
2. LED chip according to claim 1, which is characterized in that the micro-nano structure is round bottom shape or back taper.
3. LED chip according to claim 1, which is characterized in that first substrate and the second substrate are by identical material
It is made.
4. LED chip according to claim 1, which is characterized in that first substrate and the second substrate pass through direct key
Close technique connection.
5. LED chip according to claim 1, which is characterized in that the thickness ratio of first substrate and the second substrate is
10:1~8:1.
6. a kind of production method of LED chip, which is characterized in that this method includes：
S1, multiple concave micro-nano structures are formed by etching in a side surface of the first substrate；
S2, the second substrate is connected to a side surface of first substrate with micro-nano structure；
S3, made successively in a side surface of second substrate away from first substrate the first semiconductor layer, luminescent layer and
LED chip is made in second semiconductor layer.
7. the production method of LED chip according to claim 6, which is characterized in that step S1 is specifically included, in the first lining
The edge of one side surface of bottom is protected, and the surface of unprotected first substrate by etching formed it is multiple recessed
Sunken micro-nano structure.
8. the production method of LED chip according to claim 7, which is characterized in that the method is additionally included in form institute
State the protection that one side surface of the first substrate is removed after micro-nano structure, and by the second substrate by way of Direct Bonding and institute
It states and region connection is not etched on a side surface of the first substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711331483.3A CN108054259A (en) | 2017-12-13 | 2017-12-13 | A kind of LED chip and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711331483.3A CN108054259A (en) | 2017-12-13 | 2017-12-13 | A kind of LED chip and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108054259A true CN108054259A (en) | 2018-05-18 |
Family
ID=62132647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711331483.3A Withdrawn CN108054259A (en) | 2017-12-13 | 2017-12-13 | A kind of LED chip and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108054259A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038957A (en) * | 2021-05-18 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip epitaxial structure, manufacturing method thereof and light-emitting chip |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101877330A (en) * | 2009-04-30 | 2010-11-03 | 和椿科技股份有限公司 | Sapphire substrate with period structure |
| CN103022292A (en) * | 2012-11-21 | 2013-04-03 | 浙江优纬光电科技有限公司 | InGaN-based blue light LED (Light Emitting Diode) device and preparation method thereof |
| CN103078024A (en) * | 2013-01-31 | 2013-05-01 | 武汉迪源光电科技有限公司 | Light-emitting diode (LED) with reflector structure |
| CN103208568A (en) * | 2013-04-01 | 2013-07-17 | 厦门市三安光电科技有限公司 | Nitride light-emitting diode and manufacturing method |
| US20150048385A1 (en) * | 2013-08-13 | 2015-02-19 | Lextar Electronics Corporation | Light emitting diode substrate |
| CN105264677A (en) * | 2013-12-03 | 2016-01-20 | 崇高种子公司 | Led element |
-
2017
- 2017-12-13 CN CN201711331483.3A patent/CN108054259A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101877330A (en) * | 2009-04-30 | 2010-11-03 | 和椿科技股份有限公司 | Sapphire substrate with period structure |
| CN103022292A (en) * | 2012-11-21 | 2013-04-03 | 浙江优纬光电科技有限公司 | InGaN-based blue light LED (Light Emitting Diode) device and preparation method thereof |
| CN103078024A (en) * | 2013-01-31 | 2013-05-01 | 武汉迪源光电科技有限公司 | Light-emitting diode (LED) with reflector structure |
| CN103208568A (en) * | 2013-04-01 | 2013-07-17 | 厦门市三安光电科技有限公司 | Nitride light-emitting diode and manufacturing method |
| US20150048385A1 (en) * | 2013-08-13 | 2015-02-19 | Lextar Electronics Corporation | Light emitting diode substrate |
| CN105264677A (en) * | 2013-12-03 | 2016-01-20 | 崇高种子公司 | Led element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038957A (en) * | 2021-05-18 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip epitaxial structure, manufacturing method thereof and light-emitting chip |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180518 |
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| WW01 | Invention patent application withdrawn after publication |