CN108054190B - OLED unit and manufacturing method thereof, display panel and display device - Google Patents
OLED unit and manufacturing method thereof, display panel and display device Download PDFInfo
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- CN108054190B CN108054190B CN201810022621.8A CN201810022621A CN108054190B CN 108054190 B CN108054190 B CN 108054190B CN 201810022621 A CN201810022621 A CN 201810022621A CN 108054190 B CN108054190 B CN 108054190B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 70
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- 238000006243 chemical reaction Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 230000005525 hole transport Effects 0.000 claims description 14
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 2
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- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
The invention discloses an OLED unit and a manufacturing method thereof, a display panel and a display device, and belongs to the technical field of display. The OLED cell includes: a first electrode layer disposed on the substrate base; the near infrared light-emitting layer is arranged on one side of the first electrode layer far away from the substrate base plate and is used for emitting near infrared light; the barrier layer is arranged on one side of the near infrared light-emitting layer far away from the substrate base plate and is made of conductive materials; the red light emitting layer is arranged on one side of the barrier layer away from the substrate base plate and is used for emitting red light; and the second electrode layer is arranged on one side of the red light emitting layer far away from the substrate, and the polarity of the second electrode layer is opposite to that of the first electrode layer. The invention simplifies the manufacturing process of the display panel and reduces the manufacturing cost.
Description
Technical Field
The invention relates to the technical field of display, in particular to an OLED unit, a manufacturing method thereof, a display panel and a display device.
Background
In an Organic Light-Emitting Diode (OLED) display panel with fingerprint identification function, each Light-Emitting unit is provided with: a display-purpose OLED unit capable of emitting light for display, and a near infrared OLED unit capable of emitting light for fingerprint recognition.
In the related art, the display OLED unit and the near infrared OLED unit are provided on the display panel independently of each other. And the display-purpose OLED unit and the near infrared OLED unit each include an anode, a hole injection layer, a hole transport layer, an electroluminescent film layer, an electron transport layer, an electron injection layer, a cathode, and the like.
However, in the process of manufacturing the OLED display panel having the fingerprint recognition function, since the near infrared OLED unit is additionally manufactured after the display OLED unit is manufactured, the manufacturing process of the display panel is complicated.
Disclosure of Invention
The invention provides an OLED unit, a manufacturing method thereof, a display panel and a display device, which can solve the problem that the manufacturing process of the display panel is complex because a near infrared OLED unit is additionally manufactured after the OLED unit for display is manufactured in the process of manufacturing the OLED display panel with the fingerprint identification function in the related technology, and the technical scheme is as follows:
in a first aspect, there is provided an OLED cell comprising:
a first electrode layer disposed on the substrate base;
the near infrared light-emitting layer is arranged on one side of the first electrode layer far away from the substrate base plate and is used for emitting near infrared light;
the barrier layer is arranged on one side of the near infrared light-emitting layer far away from the substrate base plate and is made of conductive materials;
the red light emitting layer is arranged on one side of the barrier layer away from the substrate base plate and is used for emitting red light;
and the second electrode layer is arranged on one side of the red light emitting layer far away from the substrate, and the polarity of the second electrode layer is opposite to that of the first electrode layer.
Optionally, the first electrode layer is an anode, and the second electrode layer is a cathode.
Optionally, the thickness of the red light emitting layer is greater than the thickness of the near infrared light emitting layer.
Optionally, the orthographic projection of the near infrared light emitting layer on the substrate coincides with the orthographic projection of the red light emitting layer on the substrate.
Optionally, the barrier layer is made of a transparent conductive material.
Optionally, the near infrared light emitting layer includes: a first hole transport layer, a near infrared electroluminescent film layer, and a first electron transport layer;
the red light emitting layer includes: a second hole transport layer, a red electroluminescent film layer, and a second electron transport layer.
In a second aspect, there is provided a method of manufacturing an OLED cell, the method comprising:
providing a substrate base plate;
forming a first electrode layer on the substrate base plate;
forming a near infrared light emitting layer on the substrate base plate on which the first electrode layer is formed, the near infrared light emitting layer being for emitting near infrared light;
forming a barrier layer on the substrate with the near infrared light emitting layer by adopting a conductive material;
forming a red light emitting layer on the substrate base plate with the barrier layer, wherein the red light emitting layer is used for emitting red light;
and forming a second electrode layer on the substrate base plate on which the red light emitting layer is formed.
In a third aspect, a display panel is provided, the display panel comprising the OLED unit of any one of the first aspects.
Optionally, the display panel further includes: the OLED units are arranged in a one-to-one correspondence mode, and the retaining walls are arranged on the periphery of the photoelectric conversion units and used for shielding near infrared light from the OLED units except the corresponding OLED units.
In a fourth aspect, there is provided a display device including the display panel of any one of the third aspects.
The technical scheme provided by the invention has the beneficial effects that:
the invention provides an OLED unit, a manufacturing method thereof, a display panel and a display device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an OLED cell according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method of fabricating an OLED cell according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 4 is a schematic view of a retaining wall according to an embodiment of the present invention;
fig. 5 is a flowchart illustrating a method of manufacturing a display panel according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an OLED unit according to an embodiment of the present invention, as shown in fig. 1, the OLED unit may include:
a first electrode layer 002 provided on the base substrate 001.
The near infrared light emitting layer 003 is arranged on one side, far away from the substrate 001, of the first electrode layer 002, the near infrared light emitting layer 003 is used for emitting near infrared light, the near infrared light can be emitted to the surface of a finger pressed on the surface of the display panel and reflected into the photoelectric conversion assembly through the finger, the photoelectric conversion assembly can convert the received near infrared light into current with corresponding size, and the fingerprint identification assembly in the display panel can identify fingerprints by detecting the current.
A barrier layer 004 provided on a side of the near infrared light emitting layer 003 remote from the substrate 001, the barrier layer 004 being made of a conductive material.
And a red light emitting layer 005 provided on a side of the barrier layer 004 remote from the substrate 001, the red light emitting layer 005 for emitting red light for display.
And a second electrode layer 006 provided on a side of the red light emitting layer 005 remote from the substrate 001, the polarity of the second electrode layer 006 being opposite to the polarity of the first electrode layer 002.
In summary, the embodiments of the present invention provide an OLED unit, which includes a near infrared light emitting layer and a red light emitting layer disposed in series, wherein the near infrared light emitting layer and the red light emitting layer can share a first electrode layer and a second electrode layer, and compared with the related art, the OLED unit for display is manufactured without additional manufacturing of the near infrared OLED unit, which simplifies the manufacturing process of the display panel and reduces the manufacturing cost.
Referring to fig. 1, the near infrared light emitting layer 003 may include: first hole transport layer 0031, near infrared electroluminescent film layer 0032, first electron transport layer 0033, and the like. The red light emitting layer 005 may include: a second hole transport layer 0051, a red electroluminescent film layer 0052, and a second electron transport layer 0053.
Optionally, the near infrared light emitting layer 003 may further include: other film layers such as a first electron blocking layer (exciton blocking layer, EBL) and/or a first hole blocking layer (hole blocking layer, HBL). The red light emitting layer 005 may further include: and a second electron blocking layer and/or a second hole blocking layer. In addition, the arrangement of other film layers included in the near infrared light emitting layer 003 and the arrangement of other film layers included in the red light emitting layer 005 can be adjusted according to actual needs, and the embodiment of the invention is not particularly limited.
In addition, because the energy levels of the red light and the near infrared light are close, the energy required for exciting the red light and the near infrared light is not greatly different, on one hand, when the materials of the film layers such as the first hole transport layer 0031, the first electron transport layer 0033 and the like are selected, and when the materials of the film layers such as the second hole transport layer 0051, the second electron transport layer 0053 and the like are selected, the selectable range of the materials is larger, so that the manufacturing difficulty of the OLED unit is reduced; on the other hand, since the energy required for exciting the red light and the near infrared light is not greatly different, when the voltage for emitting light is applied to the near infrared light emitting layer 003 and the red light emitting layer 005, compared with the related art, the amplitude of the voltage does not need to be increased, and the light emitting life of the near infrared electroluminescent material in the near infrared light emitting layer 003 and the red electroluminescent material in the red light emitting layer 005 can be ensured.
Alternatively, the first electrode layer 002 may be an anode, and the second electrode layer 006 may be a cathode. When the first electrode layer 002 is an anode and the second electrode layer 006 is a cathode, the red light emitted from the red light emitting layer 005 can be directly emitted after passing through the cathode, and the near infrared light emitted from the near infrared light emitting layer 003 can be directly emitted after passing through the barrier layer 004, the red light emitting layer 005 and the cathode. Therefore, the red light can be shielded as little as possible, so that the transmission efficiency of the red light is ensured, and the human eyes are insensitive to the near infrared light, so that the near infrared light does not influence the chromaticity of the red light, and the normal display of the display panel can be ensured.
Meanwhile, since the red light emitting layer 005 hardly absorbs near infrared light, even if the near infrared light needs to be transmitted through the red light emitting layer 005 to be emitted, the red light emitting layer 005 does not influence the transmission of the near infrared light, so that the transmission efficiency of the near infrared light can be ensured, and the normal operation of the fingerprint identification process is further ensured.
Further, the thickness of the red light emitting layer 005 may be greater than the thickness of the near infrared light emitting layer 003. The thickness of the red light emitting layer 005 can reflect the light intensity of the emitted red light to a certain extent, and when the thickness of the red light emitting layer 005 is set to be larger than that of the near infrared light emitting layer 003, the light emitting intensity of the red light can be ensured, so that the influence degree of other film layers on the red light for display is reduced to the greatest extent, and the normal display of the display panel is ensured. Also, the specific thicknesses of the red light emitting layer 005 and the near infrared light emitting layer 003 may be set according to actual needs, for example: the thickness of the red light emitting layer 005 may be set according to microcavities used for adjusting red light and the light intensity of the emitted red light, which is not particularly limited in the embodiment of the present invention.
Meanwhile, the orthographic projection of the near infrared light emitting layer 003 on the substrate 001 and the orthographic projection of the red light emitting layer 005 on the substrate 001 may be overlapped. Thus, the near infrared light emitting layer 003 and the red light emitting layer 005 can be manufactured using the same mask plate to further simplify the manufacturing process of the display panel.
Also, the barrier layer 004 may be made of a transparent conductive material. In this way, the transmittance of near infrared light can be ensured. Alternatively, the barrier layer 004 may be made of metal, and when the thickness of the barrier layer 004 made of metal is smaller than the preset thickness, the barrier layer 004 is close to transparent, and at this time, near infrared light can penetrate through the barrier layer 004, so as to ensure the light intensity of light for fingerprint detection.
In practical applications, the principle that the selection of the material of the barrier layer 004 can be referred to is: the barrier layer 004 made of the material is a transparent material layer, the barrier layer 004 made of the material does not absorb the emitted red light and near infrared light, and the barrier layer 004 made of the material can match the energy levels of the first hole transport layer 0031 and the second electron transport layer 0053 which are in contact therewith. For example: the material of the barrier layer 004 may be a PN junction material, the PN junction material includes a P material and an N material, wherein the N material may be a dopant of aluminum trihydroxide (ALQ 3) and lithium (Li), and the P material may be a dopant of hole transport material NPb and ferric trichloride (FeCl 3); alternatively, the material of the barrier layer 004 may be a transition metal oxide, such as: the material may be molybdenum trioxide (MoO 3), which is not particularly limited in the embodiment of the present invention.
It should be noted that, because the wavelength of human infrared is about 9-14 micrometers (um), the wavelength of near infrared is about 800um, the wavelength of the two is great, correspondingly, even if the photoelectric conversion component receives human infrared, the current obtained by converting the human infrared is very small, and the fingerprint identification component is insufficient to identify the fingerprint according to the implementation, so the human infrared can not interfere with the fingerprint identification result.
In addition, because the energy level gap of the material forming the near infrared electroluminescent film layer is smaller, when the near infrared light is applied to fingerprint identification, the near infrared light can avoid generating thermal noise compared with infrared light or far infrared light, thereby avoiding false signals caused by thermal dryness and ensuring the accuracy of fingerprint identification.
In summary, the embodiments of the present invention provide an OLED unit, which includes a near infrared light emitting layer and a red light emitting layer disposed in series, wherein the near infrared light emitting layer and the red light emitting layer can share a first electrode layer and a second electrode layer, and compared with the related art, the OLED unit for display is manufactured without additional manufacturing of the near infrared OLED unit, which simplifies the manufacturing process of the display panel and reduces the manufacturing cost.
Fig. 2 is a flowchart of a method for manufacturing an OLED cell according to an embodiment of the present invention, and as shown in fig. 2, the method may include:
step 201, a substrate is provided.
The substrate may be a transparent substrate, which may be a substrate made of a light guide material having a certain hardness, such as glass, quartz, transparent resin, polyimide (PI), or metal foil.
Step 202, forming a first electrode layer on a substrate.
For example, when the first electrode layer is an anode, a layer of anode material with a certain thickness may be deposited on the substrate by using methods such as magnetron sputtering, thermal evaporation or plasma enhanced chemical vapor deposition (english: plasma Enhanced Chemical Vapor Deposition; abbreviated as PECVD) to obtain an anode film, and then the anode film is processed by a patterning process to obtain the anode. Wherein, the primary patterning process may include: photoresist coating, exposure, development, etching and photoresist stripping, the thickness of the first electrode layer and the anode material can be set according to actual needs, for example: the anode material may be metal or Indium Tin Oxide (abbreviated as ITO) or the like.
The first electrode layer as an anode means: the first electrode layer includes a plurality of anodes disposed at intervals.
Step 203, forming a near infrared light emitting layer on the substrate base plate formed with the first electrode layer, wherein the near infrared light emitting layer is used for emitting near infrared light.
The near infrared light emitting layer may include: when forming the near infrared light emitting layer, each film layer may be formed in sequence according to the distance from the first hole transporting layer, the near infrared light emitting layer, the first electron transporting layer, and the like to the substrate. In addition, when a certain film layer is formed, a layer of film layer material with a certain thickness can be formed on the substrate by adopting a vapor deposition method, so as to obtain a corresponding film layer, for example: in forming the near infrared electroluminescent film layer, a layer of near infrared electroluminescent material having a certain thickness may be formed on the substrate having the first hole transport layer formed thereon by vapor deposition or the like, so as to obtain the near infrared electroluminescent film layer. The thickness and the material of each film layer can be set according to actual needs. For example: the near infrared electroluminescent material may be a compound containing trivalent chromium ions.
And 204, forming a barrier layer on the substrate with the near infrared light emitting layer by adopting a conductive material.
Alternatively, a layer of barrier layer material with a certain thickness may be formed on the substrate with the near infrared light emitting layer formed thereon by vapor deposition or the like, to obtain a corresponding barrier layer. The thickness and the material of the barrier layer can be set according to actual requirements. For example: the material of the barrier layer may be a PN junction material, wherein the N material may be a dopant of aluminum trihydroxide (ALQ 3) and lithium (Li), and the P material may be a dopant of hole transport material NPb and iron trichloride (FeCl 3), which is not specifically limited in the embodiment of the present invention.
Step 205, a red light emitting layer is formed on the base substrate formed with the barrier layer, the red light emitting layer being for emitting red light.
The red light emitting layer may include: when the red light emitting layer is formed, the layers such as the second hole transporting layer, the red light electroluminescent layer and the second electron transporting layer can be formed in sequence according to the distance from the second hole transporting layer, the red light electroluminescent layer and the second electron transporting layer to the substrate. In addition, when a certain film layer is formed, a layer of film layer material with a certain thickness can be formed on the substrate by adopting a vapor deposition method, so as to obtain a corresponding film layer, for example: when the red electroluminescent film layer is formed, a layer of red electroluminescent material with a certain thickness can be formed on the substrate with the second hole transport layer by adopting a vapor deposition method and the like, so that the red electroluminescent film layer is obtained. The thickness and the material of each film layer can be set according to actual needs.
It should be noted that, before performing steps 203 to 205, a pixel defining layer is further formed on the substrate with the first electrode layer formed thereon, and then a near infrared light emitting layer, a barrier layer, and a red light emitting layer are formed in a pixel region defined by the pixel defining layer.
Step 206, forming a second electrode layer on the substrate with the red light emitting layer.
Optionally, when the second electrode layer is a cathode, a layer of cathode material with a certain thickness can be deposited on the substrate by using methods such as magnetron sputtering, thermal evaporation or PECVD to obtain a cathode film layer, and then the cathode film layer is processed by a one-time patterning process to obtain the cathode. Wherein, the primary patterning process may include: photoresist coating, exposure, development, etching and photoresist stripping, the thickness of the second electrode layer and the cathode material can be set according to actual needs.
For example, please refer to fig. 1 for a schematic structural diagram of a substrate after forming the second electrode layer, the substrate 001 is sequentially stacked with a first electrode layer 002, a near infrared light emitting layer 003, a barrier layer 004, a red light emitting layer 005 and a second electrode layer 006, and for convenience of viewing, the pixel defining layer is not shown in fig. 1.
In summary, the embodiments of the present invention provide a method for manufacturing an OLED unit, where the OLED unit includes a near-infrared light emitting layer and a red light emitting layer disposed in series, and the near-infrared light emitting layer and the red light emitting layer may share a first electrode layer and a second electrode layer.
Fig. 3 is a schematic structural diagram of a display panel according to an embodiment of the present invention, where the display panel may be a current driven display panel, for example: the display panel may be an active matrix organic light emitting diode (english: active matrix organic light emitting diode; abbreviated: AMOLED) display panel driven with a constant current. As shown in fig. 3, the display panel may include a plurality of pixel units, each of which includes an OLED unit 00 (for convenience of description, simply referred to as a red OLED unit) for emitting red light for display and emitting near infrared light for fingerprint recognition provided by an embodiment of the present invention. And, each pixel unit may further include: a green OLED cell (not shown in fig. 3) for emitting green light for display and a blue OLED cell (not shown in fig. 3) for emitting blue light for display.
Further, referring to fig. 4, each pixel unit may further include: the photoelectric conversion assemblies 016 are arranged in one-to-one correspondence with the red light OLED units 00, and retaining walls 019 are arranged around the photoelectric conversion assemblies 016, the retaining walls 019 are used for shielding near infrared light emitted by the red light OLED units except the corresponding red light OLED units 00, so that the photoelectric conversion assemblies 016 only receive the near infrared light emitted by the corresponding red light OLED units 00 and reflected by fingers as much as possible, the photoelectric conversion assemblies 016 only convert the near infrared light into current as much as possible, fingerprint recognition is carried out by the fingerprint recognition assemblies in the display panel according to the converted current, interference of the near infrared light in other pixel units on fingerprint recognition is shielded, and fingerprint recognition accuracy is improved.
Moreover, the setting mode of the retaining wall can be adjusted according to actual needs, for example, the retaining walls around the photoelectric conversion assembly can be set to have the same height, or the retaining walls around the photoelectric conversion assembly can also be set to have different heights, for example: the height of the retaining wall close to one side of the photoelectric conversion component can be smaller than that of the retaining wall far away from one side of the photoelectric conversion component, and the specific height value of the retaining wall around the photoelectric conversion component can be set according to parameters such as the light emitting angle of near infrared light.
Further, the distance between the photoelectric conversion component and the red light OLED unit can be set to be smaller than a preset distance, other OLED units can be obviously distinguished from the red light OLED unit corresponding to the photoelectric conversion component according to the preset distance, and the value of the preset distance can be set according to actual needs. Therefore, the near infrared light reflected by the finger and irradiated to the photoelectric conversion component has larger light intensity, and the accuracy of fingerprint identification can be improved when fingerprint identification is carried out according to the current subjected to photoelectric conversion on the larger light intensity.
In the embodiment of the invention, the near infrared light emitting layer in each pixel can be regarded as a near infrared light emitting sub-pixel, the red light emitting layer in each pixel can be regarded as a red light sub-pixel, and because the near infrared light emitting layer and the red light emitting layer are arranged in series in each pixel, the total number of the red light sub-pixels on the display panel is equal to the total number of the near infrared light emitting sub-pixels, and each pixel unit is provided with one near infrared light emitting sub-pixel, fingerprint identification can be realized at the position corresponding to each pixel, and correspondingly, fingerprint identification with higher resolution can be realized on the display panel.
Meanwhile, since the red light OLED unit of each pixel unit comprises the near infrared light emitting layer and the red light emitting layer which are arranged in series, the OLED unit can be used as a touch unit to detect touch signals on the surface of the display panel, compared with the related art, the arrangement of the touch unit on the display panel can be reduced, the OLED unit used as the touch unit is arranged in a screen (in cell touch), and the dependence of the traditional display panel on the externally hung touch unit can be reduced.
In summary, the embodiments of the present invention provide a display panel, in which the OLED unit of the display panel includes a near infrared light emitting layer and a red light emitting layer disposed in series, and the near infrared light emitting layer and the red light emitting layer can share a first electrode layer and a second electrode layer.
An embodiment of the present invention provides a method for manufacturing a display panel, as shown in fig. 5, the method may include:
step 301, forming a front film layer structure including a TFT on a substrate.
The front film structure may refer to a film structure formed on the substrate base before the OLED cells are formed. Referring to fig. 3, a buffer (buffer) layer 011, a polysilicon (P-SI) active layer 012, a Gate Insulator (GI) 013, a Gate (Gate) 014, an interlayer dielectric layer 015, a photoelectric conversion layer 016, a source/drain pattern 017, a first planarization layer 018 and the like are sequentially formed on a substrate 001 at a distance from the substrate.
The source and drain pattern 017 may include a source electrode, a drain electrode, a signal line, a data line, and the like, and a plurality of photoelectric conversion elements are disposed in the photoelectric conversion layer 016, and alternatively, the photoelectric conversion elements may be made of gallium arsenide (GaAs) material.
Since the photoelectric conversion layer 016 is formed on the interlayer dielectric layer 015 and not on the Back Plane (BP), the BP process is not affected by the manufacturing method.
Step 302, forming an OLED unit on a substrate with a front film structure formed thereon.
The method for forming the OLED cells is referred to herein for brevity and will not be further described in detail.
It should be noted that, before forming the OLED unit, a via may be formed on the first planar layer, and the orthographic projection of the via on the substrate is located within the orthographic projection of the drain on the substrate, so that, when forming the anode in the OLED unit, the anode material thereof can be deposited in the via to realize electrical communication between the anode and the drain. For example, please refer to fig. 3 for a schematic structure of the OLED unit 00 formed on the substrate with the front film structure.
Step 303, forming a second flat layer on the substrate formed with the OLED cells.
Since there may be a level difference on the surface of the film layer farthest from the substrate in the OLED cells after the OLED cells are formed, a second flat layer may be formed on the substrate on which the OLED cells are formed after the OLED cells are formed to reduce the level difference between the film layers.
In summary, the embodiments of the present invention provide a method for manufacturing a display panel, in which an OLED unit of the display panel includes a near infrared light emitting layer and a red light emitting layer disposed in series, and the near infrared light emitting layer and the red light emitting layer can share a first electrode layer and a second electrode layer.
The embodiment of the invention also provides a display device which comprises the display panel provided by the embodiment of the invention. The display device may be: any product or component with display function such as a liquid crystal panel, electronic paper, mobile phone, tablet computer, television, display, notebook computer, digital photo frame, navigator and the like.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (10)
1. An OLED cell, wherein the OLED cell comprises:
a first electrode layer disposed on the substrate base;
the near infrared light-emitting layer is arranged on one side of the first electrode layer far away from the substrate base plate and is used for emitting near infrared light which is used for fingerprint identification;
the barrier layer is arranged on one side of the near infrared light-emitting layer far away from the substrate base plate and is made of conductive materials;
the red light emitting layer is arranged on one side of the barrier layer far away from the substrate base plate and is used for emitting red light for display;
and the second electrode layer is arranged on one side of the red light emitting layer far away from the substrate, and the polarity of the second electrode layer is opposite to that of the first electrode layer.
2. The OLED cell of claim 1, wherein the first electrode layer is an anode and the second electrode layer is a cathode.
3. The OLED cell of claim 1 or 2, wherein the thickness of the red light-emitting layer is greater than the thickness of the near-infrared light-emitting layer.
4. The OLED cell of claim 1 or 2, wherein the orthographic projection of the near infrared light-emitting layer on the substrate coincides with the orthographic projection of the red light-emitting layer on the substrate.
5. The OLED cell of claim 1 or 2, wherein the barrier layer is made of a transparent conductive material.
6. The OLED cell of claim 1 or 2, wherein the near-infrared light-emitting layer comprises: a first hole transport layer, a near infrared electroluminescent film layer, and a first electron transport layer;
the red light emitting layer includes: a second hole transport layer, a red electroluminescent film layer, and a second electron transport layer.
7. A method of manufacturing an OLED cell, the method comprising:
providing a substrate base plate;
forming a first electrode layer on the substrate base plate;
forming a near infrared light emitting layer on the substrate base plate with the first electrode layer, wherein the near infrared light emitting layer is used for emitting near infrared light, and the near infrared light is used for fingerprint identification;
forming a barrier layer on the substrate with the near infrared light emitting layer by adopting a conductive material;
forming a red light emitting layer on the substrate with the barrier layer formed, wherein the red light emitting layer is used for emitting red light, and the red light is used for display;
and forming a second electrode layer on the substrate base plate on which the red light emitting layer is formed.
8. A display panel, characterized in that it comprises an OLED cell according to any one of claims 1 to 6.
9. The display panel of claim 8, further comprising: the OLED units are arranged in a one-to-one correspondence mode, and the retaining walls are arranged on the periphery of the photoelectric conversion units and used for shielding near infrared light from the OLED units except the corresponding OLED units.
10. A display device, characterized in that the display device comprises the display panel of claim 8 or 9.
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931522B (en) * | 2018-08-31 | 2022-08-09 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
| CN109360838B (en) * | 2018-09-26 | 2022-04-26 | 京东方科技集团股份有限公司 | Sensing and controlling display panel and sensing and controlling display device |
| CN109449303B (en) * | 2018-11-06 | 2021-03-02 | 固安翌光科技有限公司 | OLED device |
| CN111244292A (en) * | 2018-11-28 | 2020-06-05 | 陕西坤同半导体科技有限公司 | Display panel and display device |
| CN109961694B (en) * | 2019-02-28 | 2023-02-28 | 重庆京东方显示技术有限公司 | Flexible display device |
| WO2020186428A1 (en) * | 2019-03-18 | 2020-09-24 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
| CN109920832B (en) * | 2019-03-25 | 2022-08-26 | 京东方科技集团股份有限公司 | Organic electroluminescence structure, display panel and display device |
| CN111863870B (en) * | 2019-04-29 | 2023-08-22 | 上海和辉光电股份有限公司 | OLED panel and driving method thereof |
| US11049992B2 (en) * | 2019-07-11 | 2021-06-29 | Pix Art Imaging Inc. | Dual wavelength light emitting device, dual wavelength light transceiving device and display |
| CN110648596B (en) * | 2019-10-22 | 2022-05-13 | 京东方科技集团股份有限公司 | Display panel, display method thereof and display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104297980A (en) * | 2014-10-31 | 2015-01-21 | 京东方科技集团股份有限公司 | COA substrate, manufacturing method thereof and display device |
| CN106465507A (en) * | 2014-05-30 | 2017-02-22 | 株式会社半导体能源研究所 | Light-emitting device, display device, and electronic device |
| CN106654037A (en) * | 2017-02-27 | 2017-05-10 | 京东方科技集团股份有限公司 | Display panel, electroluminescent device and preparation method thereof |
| CN107004130A (en) * | 2015-06-18 | 2017-08-01 | 深圳市汇顶科技股份有限公司 | Optical sensor module under the screen that fingerprint senses on screen |
| CN107011365A (en) * | 2012-10-18 | 2017-08-04 | 精工爱普生株式会社 | Thiadiazoles system compound, light-emitting component compound, light-emitting component, light-emitting device, authentication device and electronic equipment |
| CN107392168A (en) * | 2017-07-31 | 2017-11-24 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition structure and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102377360B1 (en) * | 2014-08-08 | 2022-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting element, light-emitting device, lighting device, display device, display panel, and electronic appliance |
-
2018
- 2018-01-10 CN CN201810022621.8A patent/CN108054190B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107011365A (en) * | 2012-10-18 | 2017-08-04 | 精工爱普生株式会社 | Thiadiazoles system compound, light-emitting component compound, light-emitting component, light-emitting device, authentication device and electronic equipment |
| CN106465507A (en) * | 2014-05-30 | 2017-02-22 | 株式会社半导体能源研究所 | Light-emitting device, display device, and electronic device |
| CN104297980A (en) * | 2014-10-31 | 2015-01-21 | 京东方科技集团股份有限公司 | COA substrate, manufacturing method thereof and display device |
| CN107004130A (en) * | 2015-06-18 | 2017-08-01 | 深圳市汇顶科技股份有限公司 | Optical sensor module under the screen that fingerprint senses on screen |
| CN106654037A (en) * | 2017-02-27 | 2017-05-10 | 京东方科技集团股份有限公司 | Display panel, electroluminescent device and preparation method thereof |
| CN107392168A (en) * | 2017-07-31 | 2017-11-24 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition structure and preparation method thereof |
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