CN108054190A - OLED cell and its manufacturing method, display panel, display device - Google Patents
OLED cell and its manufacturing method, display panel, display device Download PDFInfo
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- CN108054190A CN108054190A CN201810022621.8A CN201810022621A CN108054190A CN 108054190 A CN108054190 A CN 108054190A CN 201810022621 A CN201810022621 A CN 201810022621A CN 108054190 A CN108054190 A CN 108054190A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 230000004888 barrier function Effects 0.000 claims abstract description 36
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 230000005540 biological transmission Effects 0.000 claims description 18
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 230000005525 hole transport Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 246
- 239000000463 material Substances 0.000 description 40
- 238000010586 diagram Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000010405 anode material Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000011514 reflex Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- BFGKITSFLPAWGI-UHFFFAOYSA-N chromium(3+) Chemical compound [Cr+3] BFGKITSFLPAWGI-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
The invention discloses a kind of OLED cell and its manufacturing method, display panel, display devices, belong to display technology field.The OLED cell includes：The first electrode layer being arranged on underlay substrate；Near-infrared luminous layer of the first electrode layer away from the underlay substrate one side is arranged on, the near-infrared luminous layer is used to emit near infrared light；Barrier layer of the near-infrared luminous layer away from the underlay substrate one side is arranged on, the barrier layer is made of an electrically conducting material；Red light luminescent layer of the barrier layer away from the underlay substrate one side is arranged on, the red light luminescent layer is used to emit feux rouges；The second electrode lay of the red light luminescent layer away from the underlay substrate one side is arranged on, the polarity of the second electrode lay is opposite with the polarity of the first electrode layer.This invention simplifies the manufacturing process of display panel, and reduce manufacture cost.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of OLED cell and its manufacturing method, display panel, display
Device.
Background technology
Organic Light Emitting Diode (English with fingerprint identification function：Organic Light-Emitting Diode；Letter
Claim：OLED) in display panel, it is provided in each luminescence unit：Display OLED cell and near-infrared OLED cell, the display
The light for display can be sent with OLED cell, which can send the light for fingerprint recognition.
In correlation technique, which is arranged on display panel independently of each other with OLED cell and the near-infrared OLED cell
On.And the display OLED cell and the near-infrared OLED cell include anode, hole injection layer, hole transmission layer, electroluminescent
Shine film layer, electron transfer layer, electron injecting layer and cathode etc..
But during the OLED display panel with fingerprint identification function is manufactured, due to being used in manufacture display
After OLED cell, it is also necessary to which additional manufacture near-infrared OLED cell, the manufacturing process for causing the display panel are more complicated.
The content of the invention
The present invention provides a kind of OLED cell and its manufacturing method, display panel, display devices, can solve related skill
Art is during the OLED display panel with fingerprint identification function is manufactured, due to after display OLED cell is manufactured,
The problem of also needing to additionally manufacture near-infrared OLED cell, cause the manufacturing process of the display panel more complicated, the technical side
Case is as follows：
In a first aspect, providing a kind of OLED cell, the OLED cell includes：
The first electrode layer being arranged on underlay substrate；
Near-infrared luminous layer of the first electrode layer away from the underlay substrate one side is arranged on, it is described near-infrared luminous
Layer is used to emit near infrared light；
Barrier layer of the near-infrared luminous layer away from the underlay substrate one side is arranged on, the barrier layer is by conduction material
Material is made；
Red light luminescent layer of the barrier layer away from the underlay substrate one side is arranged on, the red light luminescent layer is used to send out
Penetrate feux rouges；
The second electrode lay of the red light luminescent layer away from the underlay substrate one side is arranged on, the second electrode lay
Polarity is opposite with the polarity of the first electrode layer.
Optionally, the first electrode layer is anode, and the second electrode lay is cathode.
Optionally, the thickness of the red light luminescent layer is more than the thickness of the near-infrared luminous layer.
Optionally, orthographic projection of the near-infrared luminous layer on the underlay substrate with the red light luminescent layer described
Orthographic projection on underlay substrate overlaps.
Optionally, the barrier layer is made of transparent conductive material.
Optionally, the near-infrared luminous layer includes：First hole transmission layer, near-infrared electroluminescent film layer and the first electricity
Sub- transport layer；
The red light luminescent layer includes：Second hole transmission layer, feux rouges electroluminescent film layer and the second electron transfer layer.
Second aspect provides a kind of method for manufacturing OLED cell, the described method includes：
One underlay substrate is provided；
First electrode layer is formed on the underlay substrate；
Near-infrared luminous layer is formed on the underlay substrate of the first electrode layer is formed with, the near-infrared luminous layer is used
In transmitting near infrared light；
Barrier layer is formed on the underlay substrate of the near-infrared luminous layer is formed with using conductive material；
Red light luminescent layer is formed on the underlay substrate of the barrier layer is formed with, the red light luminescent layer is red for emitting
Light；
The second electrode lay is formed on the underlay substrate of the red light luminescent layer is formed with.
The third aspect provides a kind of display panel, and it is mono- that the display panel includes any OLED of first aspect
Member.
Optionally, the display panel further includes：The photoelectric conversion component set is corresponded with the OLED cell, with
And the barricade of the photoelectric conversion component surrounding is arranged on, the barricade is used to block the OLED beyond corresponding OLED cell
The near infrared light of unit.
Fourth aspect, provides a kind of display device, and the display device includes any display surface of the third aspect
Plate.
The advantageous effect that technical solution provided by the invention is brought is：
The present invention provides a kind of OLED cell and its manufacturing method, display panel, display device, which includes
The near-infrared luminous layer and red light luminescent layer being arranged in series, the near-infrared luminous layer and the red light luminescent layer can share first electrode
Layer and the second electrode lay, compared to correlation technique, on the basis of manufacture display is with OLED, without additionally manufacturing near-infrared OLED
Unit, simplifies the manufacturing process of display panel, and reduces manufacture cost.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of structure diagram of OLED cell shown in the embodiment of the present invention；
Fig. 2 is a kind of flow chart of the method for manufacture OLED cell shown in the embodiment of the present invention；
Fig. 3 is a kind of structure diagram of display panel provided in an embodiment of the present invention；
Fig. 4 is a kind of schematic diagram of barricade provided in an embodiment of the present invention；
Fig. 5 is a kind of flow chart of the manufacturing method of display panel shown in the embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structure diagram of OLED cell provided in an embodiment of the present invention, as shown in Figure 1, the OLED cell
It can include：
The first electrode layer 002 being arranged on underlay substrate 001.
Near-infrared luminous layer 003 of the first electrode layer 002 away from 001 one side of underlay substrate is arranged on, this is near-infrared luminous
For layer 003 for emitting near infrared light, which can be transmitted to the finger surface for being pressed against panel surface, and handle
For digital reflex into photoelectric conversion component, which can be converted to the near infrared light of reception in correspondingly sized electric current,
Fingerprint recognition component in display panel is by being detected the electric current identification, it can be achieved that fingerprint.
Barrier layer 004 of the near-infrared luminous layer 003 away from 001 one side of underlay substrate is arranged on, the barrier layer 004 is by conduction
Material is made.
Red light luminescent layer 005 of the barrier layer 004 away from 001 one side of underlay substrate is arranged on, which is used for
Emit feux rouges, which is used to show.
It is arranged on the second electrode lay 006 of the red light luminescent layer 005 away from 001 one side of underlay substrate, the second electrode lay 006
Polarity it is opposite with the polarity of first electrode layer 002.
In conclusion an embodiment of the present invention provides a kind of OLED cell, which includes being arranged in series near red
Outer luminescent layer and red light luminescent layer, the near-infrared luminous layer and the red light luminescent layer can share first electrode layer and second electrode
Layer compared to correlation technique, on the basis of manufacture display is with OLED, without additionally manufacturing near-infrared OLED cell, simplifies
The manufacturing process of display panel, and reduce manufacture cost.
Wherein, please refer to Fig.1, which can include：First hole transmission layer 0031, near-infrared electricity
The film layers such as 0032 and first electron transfer layer 0033 of photoluminescence film layer.Red light luminescent layer 005 can include：Second hole transmission layer
0051st, the film layers such as 0052 and second electron transfer layer 0053 of feux rouges electroluminescent film layer.
Optionally, which can also include：First electron-blocking layer (exciton blocking
Layer, EBL) and/or other film layers such as the first hole blocking layer (hole blocking layer, HBL).The red light luminescent layer
005 can also include：Other film layers such as the second electron-blocking layer and/or the second hole blocking layer.Also, the near-infrared luminous layer
The setting of other film layers included by the setting of other film layers included by 003 and the red light luminescent layer 005 can basis
Actual needs is adjusted, and the embodiment of the present invention is not specifically limited it.
Also, since the energy level of feux rouges and near infrared light approaches, required energy differs not when exciting feux rouges and near infrared light
Greatly, on the one hand, in the material of the selection film layers such as the first hole transmission layer 0031 and the first electron transfer layer 0033 and selection the
When the material of film layers, the selectable range of material is larger for two hole transmission layers 0051 and the second electron transfer layer 0053, because
This, reduces the manufacture difficulty of the OLED cell；Required energy differs not when on the other hand, due to excitation feux rouges and near infrared light
Greatly, therefore, when loading on near-infrared luminous layer 003 and red light luminescent layer 005 is for luminous voltage, compared to related skill
Art, no need to increase the amplitudes of voltage, can ensure near-infrared electroluminescent material and red light luminescent layer in near-infrared luminous layer 003
The luminescent lifetime of feux rouges electroluminescent material in 005.
Optionally, which can be anode, and the second electrode lay 006 can be cathode.Work as first electrode layer
002 is anode, and when the second electrode lay 006 is cathode, the feux rouges that red light luminescent layer 005 emits can be penetrated directly after through cathode
Go out, the near infrared light that near-infrared luminous layer 003 emits can be penetrated directly after through barrier layer 004, red light luminescent layer 005 and cathode
Go out.In such manner, it is possible to feux rouges formation is blocked as little as possible, to ensure the transmission efficiency of feux rouges, also, since human eye is to near-infrared
Light is insensitive, which will not have an impact the colourity of feux rouges, can ensure the normal display of display panel.
Simultaneously as red light luminescent layer 005 hardly picks up near infrared light, therefore, even if near infrared light is needed through red
Light luminescent layer 005 could project, and red light luminescent layer 005 will not impact the transmission of near infrared light, can ensure near red
The transmission efficiency of outer light, and then ensure being normally carried out for fingerprint identification process.
Further, the thickness of the red light luminescent layer 005 can be more than the thickness of the near-infrared luminous layer 003.The feux rouges
The thickness of luminescent layer 005 can reflect the light intensity of the feux rouges of transmitting to a certain extent, be set when by the thickness of red light luminescent layer 005
During to be more than the thickness of near-infrared luminous layer 003, can ensure feux rouges goes out luminous intensity, farthest to reduce other film layers
To the influence degree of the feux rouges of display, and then ensure the normal display of display panel.Also, the red light luminescent layer 005 and should
The specific thickness of near-infrared luminous layer 003 can be configured according to actual needs, such as：The thickness of the red light luminescent layer 005
It can be configured according to the microcavity used in adjusting feux rouges and the luminous intensity that goes out of feux rouges, the embodiment of the present invention does not do it specific limit
It is fixed.
Meanwhile the orthographic projection of the near-infrared luminous layer 003 on underlay substrate 001 and the red light luminescent layer 005 are in substrate
Orthographic projection on substrate 001 can overlap.In this way, can use, same mask plate manufactures near-infrared luminous layer 003 and feux rouges is sent out
Photosphere 005, to be further simplified the manufacturing process of display panel.
Also, the barrier layer 004 can be made of transparent conductive material.In this manner it is ensured that the transmissivity of near infrared light.
Optionally, which can also be made of metal, when the thickness for the barrier layer 004 being made of metal is less than preset thickness
When, the barrier layer 004 is close to transparent, at this point, near infrared light can penetrate the barrier layer 004, and then ensures to examine for fingerprint
The light intensity of the light of survey.
In practical application, the principle that the material selection of the barrier layer 004 may be referred to is：The barrier layer made of the material
004 is transparent material layer, and barrier layer 004 does not absorb the feux rouges of transmitting and near infrared light and by the material made of the material
Barrier layer 004 made of material and the first hole transmission layer 0031 and the energy level of the second electron transfer layer 0053 that are in contact with it can
Matching.Such as：The material of the barrier layer 004 can be PN junction material, which includes P materials and N materials, wherein, N materials
Material can be the dopant that trihydroxy closes aluminium (ALQ3) and lithium (Li), and P materials can be hole mobile material NPb and ferric trichloride
(FeCl3) dopant；Alternatively, the material or transition metal oxide of the barrier layer 004, such as：Its material can be with
For molybdenum trioxide (MoO3), the embodiment of the present invention is not specifically limited it.
It should be noted that since human body infrared wavelength is about 9-14 microns (um), the wavelength of near infrared light is
800um or so, the two wavelength difference it is larger, correspondingly, even if photoelectric conversion component receive it is human body infrared, according to should
The human body infrared electric current very little being converted to, fingerprint recognition component are not enough to realize fingerprint recognition according to it, and therefore, human body is red
Outside line will not interfere fingerprint recognition result.
Further, since the energy gaps for forming the material of near-infrared electroluminescent film layer are smaller, answered when by the near infrared light
During for fingerprint recognition, which can avoid generating heat and make an uproar compared to infrared or far red light, so can avoid by
Glitch caused by heat is dry can ensure the accuracy of fingerprint recognition.
In conclusion an embodiment of the present invention provides a kind of OLED cell, which includes being arranged in series near red
Outer luminescent layer and red light luminescent layer, the near-infrared luminous layer and the red light luminescent layer can share first electrode layer and second electrode
Layer compared to correlation technique, on the basis of manufacture display is with OLED, without additionally manufacturing near-infrared OLED cell, simplifies
The manufacturing process of display panel, and reduce manufacture cost.
Fig. 2 is a kind of flow chart of method for manufacturing OLED cell provided in an embodiment of the present invention, as shown in Fig. 2, the party
Method can include：
Step 201 provides a underlay substrate.
The underlay substrate can be transparent substrate, can be using glass, quartz, transparent resin, polyimides
(Polyimide, PI) or sheet metal etc. have substrate made of the optical material of certain degree of hardness.
Step 202 forms first electrode layer on underlay substrate.
Illustratively, when the first electrode layer is anode, magnetron sputtering, thermal evaporation or plasma enhancing may be employed
Chemical vapour deposition technique (English：Plasma Enhanced Chemical Vapor Deposition；Referred to as：The side such as PECVD)
Method deposits one layer on underlay substrate has certain thickness anode material, obtains anode film layer, then passes through a composition work
Skill is handled to obtain anode to anode film layer.Wherein, a patterning processes can include：Photoresist coating, exposure, development,
Etching and photoresist lift off, the thickness of the first electrode layer and the anode material can be configured according to actual needs, example
Such as：The anode material can be metal or tin indium oxide (English：Indium Tin Oxide；Abbreviation：ITO) etc..
It should be noted that the first electrode layer refers to for anode：The first electrode layer includes multiple spaced sun
Pole.
Step 203 forms near-infrared luminous layer on the underlay substrate for be formed with first electrode layer, the near-infrared luminous layer
For emitting near infrared light.
The near-infrared luminous layer can include：First hole transmission layer, near-infrared electroluminescent film layer and the first electronics pass
The film layers such as defeated layer, can be according to the first hole transmission layer, near-infrared electroluminescent film layer and when forming near-infrared luminous layer
The film layers such as one electron transfer layer are to underlay substrate by closely to remote distance, sequentially forming each film layer.Also, forming some film layer
When, the methods of vapor deposition may be employed forms one layer on underlay substrate has certain thickness film material, obtains corresponding film
Layer, such as：When forming near-infrared electroluminescent film layer, the methods of vapor deposition may be employed, is being formed with the first hole transmission layer
One layer is formed on underlay substrate has certain thickness near-infrared electroluminescent material, to obtain near-infrared electroluminescent film layer.
Wherein, the thickness of each film layer and material can be configured according to actual needs.Such as：The near-infrared electroluminescent material can be with
For the compound containing trivalent chromic ion.
Step 204 forms barrier layer using conductive material on the underlay substrate of near-infrared luminous layer is formed with.
It is alternatively possible to forming one layer on the underlay substrate of near-infrared luminous layer is formed with using the methods of vapor deposition has
Certain thickness barrier material obtains corresponding barrier layer.Wherein, the thickness of the barrier layer and material can be according to actual need
It is configured.Such as：The material of the barrier layer can be PN junction material, wherein, N materials can be that trihydroxy closes aluminium (ALQ3)
With the dopant of lithium (Li), P materials can be the dopant of hole mobile material NPb and ferric trichloride (FeCl3), and the present invention is real
Example is applied to be not specifically limited it.
Step 205 forms red light luminescent layer on the underlay substrate for be formed with barrier layer, which is used to emit
Feux rouges.
The red light luminescent layer can include：Second hole transmission layer, feux rouges electroluminescent film layer and the second electron transfer layer
Etc. film layers, when forming red light luminescent layer, can be passed according to the second hole transmission layer, feux rouges electroluminescent film layer and the second electronics
The film layers such as defeated layer are to underlay substrate by closely to remote distance, sequentially forming each film layer.It, can be with also, when forming some film layer
There is certain thickness film material using forming one layer on underlay substrate the methods of vapor deposition, obtain corresponding film layer, such as：
When forming feux rouges electroluminescent film layer, the methods of vapor deposition may be employed, is on the underlay substrate of the second hole transmission layer is formed with
Forming one layer has certain thickness feux rouges electroluminescent material, to obtain feux rouges electroluminescent film layer.Wherein, the thickness of each film layer
Degree and material can be configured according to actual needs.
It should be noted that before step 203 to step 205 is performed, it is also necessary to be formed with the lining of first electrode layer
Pixel defining layer is formed on substrate, near-infrared luminous layer, resistance are formed in the pixel region then limited in pixel defining layer
Interlayer and red light luminescent layer.
Step 206 forms the second electrode lay on the underlay substrate for be formed with red light luminescent layer.
Optionally, when the second electrode lay is cathode, the methods of magnetron sputtering, thermal evaporation or PECVD may be employed
One layer is deposited on underlay substrate has certain thickness cathode material, obtains cathode film layer, then passes through a patterning processes
Cathode membrane layer is handled to obtain cathode.Wherein, a patterning processes can include：Photoresist coating, exposure, development, quarter
Erosion and photoresist lift off, the thickness of the second electrode lay and the cathode material can be configured according to actual needs.
Illustratively, the structure diagram of the underlay substrate formed after the second electrode lay please refers to Fig.1, the underlay substrate 001
On be cascading and have first electrode layer 002, near-infrared luminous layer 003, barrier layer 004, the electricity of red light luminescent layer 005 and second
Pole layer 006, and for the ease of watching, pixel defining layer not shown in the Fig. 1.
In conclusion an embodiment of the present invention provides a kind of method for manufacturing OLED cell, which includes series connection
The near-infrared luminous layer and red light luminescent layer set, the near-infrared luminous layer and the red light luminescent layer can share first electrode layer and
The second electrode lay, it is mono- without additionally manufacturing near-infrared OLED on the basis of manufacture display is with OLED compared to correlation technique
Member, simplifies the manufacturing process of display panel, and reduces manufacture cost.
Fig. 3 is a kind of structure diagram of display panel provided in an embodiment of the present invention, which can be electric current
Drive type display panel, such as：The display panel can be with the active matrix organic light-emitting diode (English of constant current driven
Text：Active matrix organic light emitting diode；Abbreviation：AMOLED) display panel.As shown in figure 3,
The display panel can include multiple pixel units, and each pixel unit includes OLED cell 00 provided in an embodiment of the present invention
(for ease of description, being referred to as feux rouges OLED cell), the feux rouges OLED cell are used for the feux rouges and hair of display for emitting
Penetrate the near infrared light for fingerprint recognition.Also, it can also include in each pixel unit：For emitting the green of display green light
Light OLED cell (not shown in Fig. 3) and the Nan dian Yao unit for emitting display blue light (not shown in Fig. 3).
Further, please refer to Fig.4, each pixel unit can also include：It is set with the one-to-one corresponding of feux rouges OLED cell 00
The photoelectric conversion component 016 put and the barricade 019 for being arranged on 016 surrounding of photoelectric conversion component, the barricade 019 is for blocking
The near infrared light of feux rouges OLED cell transmitting beyond corresponding feux rouges OLED cell 00 so that the photoelectric conversion component 016
It only receives as far as possible and emits from the correspondence feux rouges OLED cell 00 and handle the near infrared light of digital reflex, in order to photoelectric conversion component
The near infrared light is only converted to electric current by 016 as far as possible, make fingerprint recognition component in display panel according to transformed electric current into
Row fingerprint recognition to shield interference of the near infrared light in other pixel units to fingerprint recognition, and then improves fingerprint recognition
Accuracy.
And it is possible to the set-up mode of barricade is adjusted according to actual needs, it illustratively, can be by photoelectric conversion component surrounding
Dams setting be with identical height, alternatively, can also set photoelectric conversion component surrounding barricade have different height,
Such as：The height that can be arranged close to the barricade of photoelectric conversion component one side is less than the barricade away from photoelectric conversion component one side
Highly, and the specific height number of the barricade of photoelectric conversion component surrounding can according to the parameters such as the light-emitting angle of near infrared light into
Row is set.
Further, the distance of photoelectric conversion component and feux rouges OLED cell can also be set to be less than pre-determined distance, according to
The pre-determined distance can significantly distinguish other OLED cells feux rouges OLED cell corresponding with photoelectric conversion component, and
The numerical value of the pre-determined distance can be configured according to actual needs.In this way, it handles digital reflex and exposes to photoelectric conversion component
Near infrared light there is larger light intensity, carry out fingerprint recognition according to the electric current after opto-electronic conversion is carried out to the larger light intensity
When, the accuracy of fingerprint recognition can be improved.
In embodiments of the present invention, the near-infrared luminous layer in each pixel can be considered a near-infrared luminous sub-pixel,
Red light luminescent layer in each pixel can be considered a feux rouges sub-pixel, due to near-infrared luminous layer and feux rouges in each pixel
Luminescent layer is arranged in series, and the sum of the total and near-infrared luminous sub-pixel of the feux rouges sub-pixel on display panel is equal, and every
It is respectively provided in a pixel unit there are one near-infrared luminous sub-pixel, therefore, each pixel can be realized at corresponding position
Fingerprint recognition, correspondingly, can realize the fingerprint recognition of high-resolution on the display panel.
Simultaneously as include the near-infrared luminous layer being arranged in series and red in the feux rouges OLED cell of each pixel unit
Therefore the OLED cell, can be used as touch control unit by light luminescent layer, to detect the touching signals of panel surface, compared to
Correlation technique, it is possible to reduce the setting of touch control unit on display panel, also, the OLED cell as touch control unit is made in
In screen (in cell touch), additionally it is possible to reduce dependence of the conventional display panels to plug-in touch control unit.
In conclusion an embodiment of the present invention provides a kind of display panel, the OLED cell of the display panel includes series connection
The near-infrared luminous layer and red light luminescent layer set, the near-infrared luminous layer and the red light luminescent layer can share first electrode layer and
The second electrode lay, it is mono- without additionally manufacturing near-infrared OLED on the basis of manufacture display is with OLED compared to correlation technique
Member, simplifies the manufacturing process of display panel, and reduces manufacture cost.
This provides a kind of manufacturing method of display panel to the embodiment of the present invention, as shown in figure 5, this method can include：
Step 301 forms the preceding film layer structure for including TFT on underlay substrate.
The preceding film layer structure can refer to before OLED cell is formed, the film layer structure formed on underlay substrate.It please join
Examine Fig. 3, according to underlay substrate by closely to remote distance, buffering (buffer) layer is sequentially formed on the underlay substrate 001
011st, polysilicon (P-SI) active layer 012, gate insulation layer (Gate Insulator, abbreviation：GI) 013, grid (gate) 014,
Interlayer dielectric layer 015, photoelectric conversion layer 016,017 and first flatness layer 018 of source-drain electrode figure etc..
Wherein, source-drain electrode figure 017 can include source electrode, drain electrode, signal wire and data cable etc., in photoelectric conversion layer 016
Multiple photoelectric conversion components are provided with, optionally, which can be made of GaAs (GaAs) material.
It should be noted that since the photoelectric conversion layer 016 is manufactured on interlayer dielectric layer 015, and be manufactured without in backboard
On (backplane, BP), therefore the manufacturing method will not impact BP techniques.
Step 302 forms OLED cell before being formed on the underlay substrate of film layer structure.
The method that the method for the formation OLED cell please accordingly refers to manufacture OLED cell provided in an embodiment of the present invention, this
Place repeats no more.
It should be noted that before OLED cell is formed, via can be formed on the first flatness layer, the via is in substrate
Orthographic projection on substrate is located at drain electrode in the orthographic projection on underlay substrate so that in the anode in forming OLED cell,
Anode material can be deposited in the via, to realize that anode is electrically connected with what is drained.Illustratively, the film layer structure before being formed with
Underlay substrate on formed OLED cell 00 after structure diagram please refer to Fig.3.
Step 303 forms the second flatness layer on the underlay substrate for be formed with OLED cell.
After forming OLED cell, apart from farthest film surface, there may be sections with underlay substrate in OLED cell
Therefore difference, after OLED cell is formed, can also form the second flatness layer on the underlay substrate for be formed with OLED cell, with
Reduce the segment difference between film layer.
In conclusion an embodiment of the present invention provides a kind of manufacturing method of display panel, the OLED of the display panel is mono-
Member includes the near-infrared luminous layer and red light luminescent layer that are arranged in series, and the near-infrared luminous layer and the red light luminescent layer can share the
One electrode layer and the second electrode lay, it is near red without additionally manufacturing on the basis of manufacture display is with OLED compared to correlation technique
Outer OLED cell, simplifies the manufacturing process of display panel, and reduces manufacture cost.
The embodiment of the present invention additionally provides a kind of display device, which includes display provided in an embodiment of the present invention
Panel.The display device can be：Liquid crystal panel, Electronic Paper, mobile phone, tablet computer, television set, display, laptop,
Any product or component with display function such as Digital Frame, navigator.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modifications, equivalent replacements and improvements are made should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of OLED cell, which is characterized in that the OLED cell includes：
The first electrode layer being arranged on underlay substrate；
Near-infrared luminous layer of the first electrode layer away from the underlay substrate one side is arranged on, the near-infrared luminous layer is used
In transmitting near infrared light；
Barrier layer of the near-infrared luminous layer away from the underlay substrate one side is arranged on, the barrier layer is by conductive material system
Into；
Red light luminescent layer of the barrier layer away from the underlay substrate one side is arranged on, the red light luminescent layer is red for emitting
Light；
It is arranged on the second electrode lay of the red light luminescent layer away from the underlay substrate one side, the polarity of the second electrode lay
It is opposite with the polarity of the first electrode layer.
2. OLED cell according to claim 1, which is characterized in that the first electrode layer is anode, second electricity
Pole layer is cathode.
3. OLED cell according to claim 1 or 2, which is characterized in that the thickness of the red light luminescent layer is more than described
The thickness of near-infrared luminous layer.
4. OLED cell according to claim 1 or 2, which is characterized in that the near-infrared luminous layer is in the substrate base
Orthographic projection of the orthographic projection with the red light luminescent layer on the underlay substrate on plate overlaps.
5. OLED cell according to claim 1 or 2, which is characterized in that the barrier layer is made of transparent conductive material.
6. OLED cell according to claim 1 or 2, which is characterized in that the near-infrared luminous layer includes：First hole
Transport layer, near-infrared electroluminescent film layer and the first electron transfer layer；
The red light luminescent layer includes：Second hole transmission layer, feux rouges electroluminescent film layer and the second electron transfer layer.
A kind of 7. method for manufacturing OLED cell, which is characterized in that the described method includes：
One underlay substrate is provided；
First electrode layer is formed on the underlay substrate；
Near-infrared luminous layer is formed on the underlay substrate of the first electrode layer is formed with, the near-infrared luminous layer is used to send out
Penetrate near infrared light；
Barrier layer is formed on the underlay substrate of the near-infrared luminous layer is formed with using conductive material；
Red light luminescent layer is formed on the underlay substrate of the barrier layer is formed with, the red light luminescent layer is used to emit feux rouges；
The second electrode lay is formed on the underlay substrate of the red light luminescent layer is formed with.
8. a kind of display panel, which is characterized in that the display panel includes any OLED cell of claim 1 to 6.
9. display panel according to claim 8, which is characterized in that the display panel further includes：It is mono- with the OLED
Member corresponds the photoelectric conversion component set and the barricade for being arranged on the photoelectric conversion component surrounding, and the barricade is used
In the near infrared light for blocking the OLED cell beyond corresponding OLED cell.
10. a kind of display device, which is characterized in that the display device includes the display panel described in claim 8 or 9.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109360838A (en) * | 2018-09-26 | 2019-02-19 | 京东方科技集团股份有限公司 | A kind of sensing control display panel and sensing control display device |
| CN109449303A (en) * | 2018-11-06 | 2019-03-08 | 固安翌光科技有限公司 | A kind of OLED device |
| CN109920832A (en) * | 2019-03-25 | 2019-06-21 | 京东方科技集团股份有限公司 | Organic electroluminescence structure, display panel and display device |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104297980A (en) * | 2014-10-31 | 2015-01-21 | 京东方科技集团股份有限公司 | COA substrate, manufacturing method thereof and display device |
| US20160043146A1 (en) * | 2014-08-08 | 2016-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, lighting device, display device, display panel, and electronic appliance |
| CN106465507A (en) * | 2014-05-30 | 2017-02-22 | 株式会社半导体能源研究所 | Light-emitting device, display device, and electronic device |
| CN106654037A (en) * | 2017-02-27 | 2017-05-10 | 京东方科技集团股份有限公司 | Display panel, electroluminescent device and preparation method thereof |
| CN107004130A (en) * | 2015-06-18 | 2017-08-01 | 深圳市汇顶科技股份有限公司 | Optical sensor module under the screen that fingerprint senses on screen |
| CN107011365A (en) * | 2012-10-18 | 2017-08-04 | 精工爱普生株式会社 | Thiadiazoles system compound, light-emitting component compound, light-emitting component, light-emitting device, authentication device and electronic equipment |
| CN107392168A (en) * | 2017-07-31 | 2017-11-24 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition structure and preparation method thereof |
-
2018
- 2018-01-10 CN CN201810022621.8A patent/CN108054190B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107011365A (en) * | 2012-10-18 | 2017-08-04 | 精工爱普生株式会社 | Thiadiazoles system compound, light-emitting component compound, light-emitting component, light-emitting device, authentication device and electronic equipment |
| CN106465507A (en) * | 2014-05-30 | 2017-02-22 | 株式会社半导体能源研究所 | Light-emitting device, display device, and electronic device |
| US20160043146A1 (en) * | 2014-08-08 | 2016-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, lighting device, display device, display panel, and electronic appliance |
| CN104297980A (en) * | 2014-10-31 | 2015-01-21 | 京东方科技集团股份有限公司 | COA substrate, manufacturing method thereof and display device |
| CN107004130A (en) * | 2015-06-18 | 2017-08-01 | 深圳市汇顶科技股份有限公司 | Optical sensor module under the screen that fingerprint senses on screen |
| CN106654037A (en) * | 2017-02-27 | 2017-05-10 | 京东方科技集团股份有限公司 | Display panel, electroluminescent device and preparation method thereof |
| CN107392168A (en) * | 2017-07-31 | 2017-11-24 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition structure and preparation method thereof |
Cited By (19)
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|---|---|---|---|---|
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| CN110931522A (en) * | 2018-08-31 | 2020-03-27 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
| CN109360838A (en) * | 2018-09-26 | 2019-02-19 | 京东方科技集团股份有限公司 | A kind of sensing control display panel and sensing control display device |
| US11397484B2 (en) | 2018-09-26 | 2022-07-26 | Ordos Yuansheng Optoelectronics Co., Ltd. | Display panel, display device and method for determining the position of an external object thereby |
| WO2020063608A1 (en) * | 2018-09-26 | 2020-04-02 | 京东方科技集团股份有限公司 | Display panel, display device, and method for determining position of external object by using same |
| CN109449303A (en) * | 2018-11-06 | 2019-03-08 | 固安翌光科技有限公司 | A kind of OLED device |
| CN111244292A (en) * | 2018-11-28 | 2020-06-05 | 陕西坤同半导体科技有限公司 | Display panel and display device |
| CN109961694A (en) * | 2019-02-28 | 2019-07-02 | 重庆京东方显示技术有限公司 | A kind of flexible display apparatus |
| CN112055893B (en) * | 2019-03-18 | 2024-04-05 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
| CN112055893A (en) * | 2019-03-18 | 2020-12-08 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
| WO2020186428A1 (en) * | 2019-03-18 | 2020-09-24 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
| US11342392B2 (en) | 2019-03-18 | 2022-05-24 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel and manufacturing method thereof |
| WO2020192620A1 (en) * | 2019-03-25 | 2020-10-01 | 京东方科技集团股份有限公司 | Light emitting module, display panel, and display device |
| CN109920832A (en) * | 2019-03-25 | 2019-06-21 | 京东方科技集团股份有限公司 | Organic electroluminescence structure, display panel and display device |
| CN109920832B (en) * | 2019-03-25 | 2022-08-26 | 京东方科技集团股份有限公司 | Organic electroluminescence structure, display panel and display device |
| CN111863870A (en) * | 2019-04-29 | 2020-10-30 | 上海和辉光电有限公司 | OLED panel and driving method thereof |
| CN111863870B (en) * | 2019-04-29 | 2023-08-22 | 上海和辉光电股份有限公司 | OLED panel and driving method thereof |
| CN112216773A (en) * | 2019-07-11 | 2021-01-12 | 原相科技股份有限公司 | Dual wavelength light emitting device, dual wavelength light emitting device, and display |
| CN110648596A (en) * | 2019-10-22 | 2020-01-03 | 京东方科技集团股份有限公司 | Display panel, display method thereof and display device |
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