CN108039365A - A kind of transistor, clamp circuit and integrated circuit - Google Patents
A kind of transistor, clamp circuit and integrated circuit Download PDFInfo
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- CN108039365A CN108039365A CN201710875844.4A CN201710875844A CN108039365A CN 108039365 A CN108039365 A CN 108039365A CN 201710875844 A CN201710875844 A CN 201710875844A CN 108039365 A CN108039365 A CN 108039365A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 41
- 230000005669 field effect Effects 0.000 claims abstract description 35
- 229920005591 polysilicon Polymers 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 239000011248 coating agent Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 230000004224 protection Effects 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 15
- 150000004706 metal oxides Chemical class 0.000 claims description 15
- 230000005611 electricity Effects 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 7
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 230000001681 protective effect Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000003068 static effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002633 protecting effect Effects 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
Abstract
The invention discloses a kind of transistor, clamp circuit and integrated circuit, transistor includes：Substrate, the oxide skin(coating) on substrate, the silicon layer on oxide skin(coating)；Active area and drain region are set on silicon layer, they are channel region between source region and drain region, wherein, source region and drain region are the heavy doping of the first doping type；Polysilicon is provided with channel region, polysilicon is the grid of mos field effect transistor, wherein, the first end region of grid is the heavy doping of the first doping type, remaining region is the heavy doping of the second doping type, first doping type is differed with the second doping type, and first end region is grid close to the region in drain region.Device and circuit provided by the invention, to solve in the prior art, for the MOSFET of electrostatic protection, there are electrostatic protection ability and the technical problem that cannot take into account of electric leakage control.The technique effect for reducing electric leakage is realized on the basis of ESD protective capabilities are ensured.
Description
Technical field
The present invention relates to semiconductor applications, more particularly to a kind of transistor, clamp circuit and integrated circuit.
Background technology
With the progress of integrated circuit technology, mos field effect transistor (Metal-Oxide-
Semiconductor Field-Effect Transistor, MOSFET) characteristic size it is less and less, the thickness of gate oxide
Degree is also more and more thinner, under this trend, uses high performance static discharge (Electron Static Discharge, ESD)
Protective device carrys out static electricity discharge electric charge to protect grid oxic horizon to seem particularly significant.ESD is when the pin of an integrated circuit
During suspension joint, a large amount of electrostatic charges pour into the instantaneous process of integrated circuit, the about time-consuming 1us of whole process from outside to inside.In integrated electricity
The high pressure of hundreds if not thousands of volts can be produced during the static discharge on road, by the gate oxide breakdown of input stage in integrated circuit.
In order to bear so high static discharge voltage, IC products generally have to use with high-performance, high tolerance
Electrostatic discharge protector.
With the rapid progress of silicon (Silicon-On-Insulator, SOI) technology in dielectric substrate, SOI integrates electricity
The ESD protections on road become a main reliability design problem.Clamp circuit Power Clamp as shown in Figure 1 are passed through
It is commonly used in progress ESD protections between SOI integrated circuits VDD and VSS, the Power clamp of general detection circuit RC triggerings, base
The conducting of nmos device is designed to control in the control circuit of RC time constants, the drain electrode (drain) of the nmos device is even
VDD is connected to, its source electrode (source) is connected to VSS., should when there is ESD voltage to occur across between VDD and VSS power cords
Nmos device can be switched on and a temporary low impedance path is formed between VDD and VSS, and esd discharge electric current is i.e. by this
Nmos device is released.Using this ESD clamped circuit, esd discharges of the VDD to VSS can be effectively protected.
The Power clamp of general RC triggerings, in order to reach effective ESD electric currents of releasing, it is necessary to which one bigger
MOS (BigFET), concrete structure is as shown in Fig. 2, this BigFET channel width is about 1000um-5000um.It is so big
BigFET is placed between vdd and vss, can produce bigger electric leakage.
Currently, generally leak electricity by adjusting BigFET channel lengths L, the channel width W in Power Clamp to reduce.
Increase channel length L, reduction channel width W can reduce electric leakage to a certain extent, but increase channel length L, reduce ditch
Road width W can weaken the ESD protective capabilities of Power Clamp.
That is, the MOSFET for electrostatic protection cannot there are electrostatic protection ability and electric leakage control in the prior art
The technical problem taken into account.
The content of the invention
The present invention solves by providing a kind of transistor, clamp circuit and integrated circuit and is used for electrostatic in the prior art
There are the technical problem that electrostatic protection ability and electric leakage control cannot be taken into account by the MOSFET of protection.
On the one hand, in order to solve the above technical problems, the embodiment provides following technical solution：
A kind of mos field effect transistor, including：
Substrate, the oxide skin(coating) on the substrate, the silicon layer on the oxide skin(coating)；
Active area and drain region are set on the silicon layer, they are channel region between the source region and the drain region, wherein, the source
Area and the drain region are the heavy doping of the first doping type；
Polysilicon is provided with the channel region, the polysilicon is the Metal-Oxide Semiconductor field effect transistor
The grid of pipe, wherein, the first end region of the grid is the heavy doping of the first doping type, the grid except described the
Region outside one end region is the heavy doping of the second doping type, first doping type and second doping type
Differ, the first end region is the grid close to the region in the drain region.
Optionally, the transistor is more than the field-effect transistor BigFET of 2000um for channel width.
Optionally, first doping type adulterates for N+, and second doping type adulterates for P+；Alternatively, described
One doping type adulterates for P+, and second doping type adulterates for N+.
Optionally, it is provided with silicon dioxide layer between the polysilicon and the channel region.
Optionally, it is overlapping that first is formed under conditions of the grid is not powered on, between the channel region and the source region
Area, forms the second crossover region between the channel region and the drain region；Wherein, whole covering described the in the first end region
Two crossover regions.
Optionally, the transistor is used for clamp circuit.
On the other hand, there is provided a kind of clamp circuit, the clamp circuit include metal oxide semiconductor field effect transistor
Pipe, the mos field effect transistor include：
Substrate, the oxide skin(coating) on the substrate, the silicon layer on the oxide skin(coating)；
Active area and drain region are set on the silicon layer, they are channel region between the source region and the drain region, wherein, the source
Area and the drain region are the heavy doping of the first doping type；
Polysilicon is provided with the channel region, the polysilicon is the Metal-Oxide Semiconductor field effect transistor
The grid of pipe, wherein, the first end region of the grid is the heavy doping of the first doping type, the grid except described the
Region outside one end region is the heavy doping of the second doping type, first doping type and second doping type
Differ, the first end region is the grid close to the region in the drain region.
Optionally, the clamp circuit is detection circuit flip-over type clamp circuit.
Another further aspect, there is provided the silicon SOI integrated circuits in a kind of dielectric substrate, the circuit are included for electrostatic protection
Clamp circuit, the clamp circuit include mos field effect transistor, the MOS field
Effect transistor includes：
Substrate, the oxide skin(coating) on the substrate, the silicon layer on the oxide skin(coating)；
Active area and drain region are set on the silicon layer, they are channel region between the source region and the drain region, wherein, the source
Area and the drain region are the heavy doping of the first doping type；
Polysilicon is provided with the channel region, the polysilicon is the Metal-Oxide Semiconductor field effect transistor
The grid of pipe, wherein, the first end region of the grid is the heavy doping of the first doping type, the grid except described the
Region outside one end region is the heavy doping of the second doping type, first doping type and second doping type
Differ, the first end region is the grid close to the region in the drain region.
Optionally, the clamp circuit is detection circuit flip-over type clamp circuit.
The one or more technical solutions provided in the embodiment of the present application, have at least the following technical effects or advantages：
Body pipe, clamp circuit and integrated circuit provided by the embodiments of the present application, set the close drain region of grid polycrystalline silicon
First end region is the heavy doping of doping type identical with source-drain area, to reduce the electric field of grid leak overlapping region, so as to reduce
Grid induced drain leakage current (gate-induced drain leakage, GIDL), further sets removing for grid polycrystalline silicon
Other regions outside the first end region are different from channel region doping type, to properly increase the threshold value of channel region electricity
Pressure, further reduces sub-threshold leakage.It is improved by the doping to polysilicon to reduce electric leakage, it is not necessary to adjust raceway groove
Length L or channel width W, can realize reduction electric leakage on the basis of ESD protective capabilities are ensured.
Brief description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only the embodiment of the present invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to the attached drawing of offer other
Attached drawing.
Fig. 1 is the circuit diagram that BigFET is used for clamp circuit in the prior art；
Fig. 2 is the structure chart of BigFET in the prior art；
Fig. 3 is the structure chart of BigFET in the embodiment of the present application；
Fig. 4 is the circuit diagram one that BigFET is used for clamp circuit in the embodiment of the present application；
Fig. 5 is the circuit diagram two that BigFET is used for clamp circuit in the embodiment of the present application；
Fig. 6 is the circuit diagram three that BigFET is used for clamp circuit in the embodiment of the present application.
Embodiment
The embodiment of the present application is solved and used in the prior art by providing a kind of transistor, clamp circuit and integrated circuit
In the MOSFET of electrostatic protection, there are the technical problem that electrostatic protection ability and electric leakage control cannot be taken into account.Ensureing ESD protections
The technique effect for reducing electric leakage is realized on the basis of ability.
In order to solve the above technical problems, the general thought that the embodiment of the present application provides technical solution is as follows：
The application provides a kind of mos field effect transistor, including：
Substrate, the oxide skin(coating) on the substrate, the silicon layer on the oxide skin(coating)；
Active area and drain region are set on the silicon layer, they are channel region between the source region and the drain region, wherein, the source
Area and the drain region are the heavy doping of the first doping type；
Polysilicon is provided with the channel region, the polysilicon is the Metal-Oxide Semiconductor field effect transistor
The grid of pipe, wherein, the first end region of the grid is the heavy doping of the first doping type, the grid except described the
Region outside one end region is the heavy doping of the second doping type, first doping type and second doping type
Differ, the first end region is the grid close to the region in the drain region.
Body pipe, clamp circuit and integrated circuit provided by the embodiments of the present application, set the close drain region of grid polycrystalline silicon
First end region is the heavy doping of doping type identical with source-drain area, to reduce the electric field of grid leak overlapping region, so as to reduce
GIDL, further sets other regions in addition to the first end region of grid polycrystalline silicon and the doping type of channel region
Difference, to properly increase the threshold voltage of channel region, further reduces sub-threshold leakage.Carried out by the doping to polysilicon
Improve to reduce electric leakage, it is not necessary to adjust channel length L or channel width W, can be realized on the basis of ESD protective capabilities are ensured
Reduce electric leakage.
In order to better understand the above technical scheme, above-mentioned technical proposal is carried out below in conjunction with specific embodiment
Describe in detail, it should be understood that the specific features in the embodiment of the present invention and embodiment are to the detailed of technical scheme
Illustrate, rather than the restriction to technical scheme, in the case where there is no conflict, in the embodiment of the present application and embodiment
Technical characteristic can be mutually combined.
Embodiment one
In the present embodiment, there is provided a kind of mos field effect transistor, as shown in figure 3, including：
Substrate 1, the oxide skin(coating) 2 on the substrate 1, the silicon layer 3 on the oxide skin(coating) 2；
Active area 4 and drain region 5 are set on the silicon layer 3, they are channel region 6 between the source region 4 and the drain region 5, wherein,
The source region 4 and the drain region 5 are the heavy doping of the first doping type；
Polysilicon 7 is provided with the channel region 6, the polysilicon 7 is brilliant for the metal oxide semiconductor field-effect
The grid of body pipe, wherein, the first end region 71 of the grid is the heavy doping of the first doping type, and the grid removes institute
The heavy doping that the region outside first end region 71 is the second doping type is stated, first doping type is mixed with described second
Miscellany type differs, and the first end region 71 is the grid close to the region in the drain region 5.
In the embodiment of the present application, the transistor is used for clamp circuit Power clamp, with to SOI integrated circuits into
Row ESD is protected.Further, in order to reach effective ESD electric currents of releasing, the transistor is set to be more than 2000um for channel width
Field-effect transistor BigFET, certainly, in specific implementation process, the transistor can also be normal size
MOSFET, this is not restricted.
Before transistor provided in this embodiment is discussed in detail, BigFET of the prior art under first introducing.Existing RC
Power Clamp are as shown in Figure 1, transistor therein 101 is existing BigFET, its specific device architecture is as shown in Fig. 2, grid
Pole polysilicon adulterates for single, and the doping type of grid polycrystalline silicon is identical with the doping type of source electrode, and grid polycrystalline silicon is mixed
Miscellany type and drain electrode doping type it is also identical, when for NMOS when, doping be N+ doping, when for PMOS when, doping is P+
Doping.The electric leakage of the existing BigFET of this structure is mainly made of sub-threshold leakage and GIDL.
The application improves existing BigFET structures, and grid polycrystalline silicon is changed to a variety of doping in subregion, if
Its heavy doping close to the first end region 71 in the drain region 5 for the first doping type is put, remaining region is the second doping class
The heavy doping of type, and the doping type in the first end region 71 is identical with the doping type of source region 4, also mixes with drain region 5
Miscellany type is identical.
In specific implementation process, the heavy doping refers to that doping concentration is in 1*1019cm-3Doping above.
In the embodiment of the present application, as shown in figure 3, when the MOSFET is NMOS, first doping type is N+
Doping, second doping type adulterate for P+；When the MOSFET is PMOS, first doping type adulterates for P+,
Second doping type adulterates for N+.
Further, under conditions of due to being not powered in the grid polycrystalline silicon 7, between the channel region 6 and the source region
The first crossover region 61 is formed, the second crossover region 62 is formed between the channel region 6 and the drain region；Wherein, the first end
Region 71 all covers second crossover region 62.
Specifically, it is contemplated that the nmos device on deep-submicron SOI integrated circuits, its leak electricity mainly by GIDL electric leakage and
Sub-threshold leakage is formed, and it is identical with source-drain area that the application, which sets the first end region 71 in the close drain region 5 of grid polycrystalline silicon 7,
The heavy doping of doping type, to reduce the electric field of grid leak overlapping region, so as to reduce tunnelling current caused by GIDL, further sets
It is different from the doping type of channel region to put other regions in addition to the first end region 71 of grid polycrystalline silicon 7, with suitable
When the threshold voltage for improving channel region, further reduce sub-threshold leakage, sub-threshold leakage and the leakage of GIDL tunnellings can be reduced at the same time
Electricity.
In the embodiment of the present application, it is provided with silicon dioxide layer 8 between the polysilicon 7 and the channel region 6.
Based on same inventive concept, present invention also provides a kind of clamp circuit of the transistor including in embodiment one,
Detailed in Example two.
Embodiment two
The present embodiment provides a kind of clamp circuit, and as Figure 4-Figure 6, the clamp circuit includes metal-oxide semiconductor (MOS)
Field-effect transistor 401, the mos field effect transistor 401 include：
Substrate, the oxide skin(coating) on the substrate, the silicon layer on the oxide skin(coating)；
Active area and drain region are set on the silicon layer, they are channel region between the source region and the drain region, wherein, the source
Area and the drain region are the heavy doping of the first doping type；
Polysilicon is provided with the channel region, the polysilicon is the Metal-Oxide Semiconductor field effect transistor
The grid of pipe, wherein, the first end region of the grid is the heavy doping of the first doping type, the grid except described the
Region outside one end region is the heavy doping of the second doping type, first doping type and second doping type
Differ, the first end region is the grid close to the region in the drain region.
In the embodiment of the present application, the clamp circuit is detection circuit flip-over type clamp circuit, is to integrate electricity for SOI
Esd protection circuit in road.
In specific implementation process, the clamp circuit can have a variety of circuit structures, be set forth below exemplified by 3 kinds：
The first, as shown in figure 4, the mos field effect transistor 401 is having ESD to produce high current
When, first normally-open raceway groove is released ESD electric currents, the parasitic bipolar junction type crystal of transistor 401 after electric current reaches a certain level
Manage (Bipolar Junction Transistor, BJT) to open, ESD electric currents of releasing, accordingly even when threshold voltage vt h increases,
Normally leakage current ability reduces, but last total ESD current drain abilities do not weaken.
Second, as shown in figure 5, the circuit structure is simple, therefore respond comparatively fast, it is quiet with preferable device charge model class
The protecting effect of electricity.
The third, as shown in fig. 6, the circuit uses substrate triggering technique, can reduce the metal-oxide semiconductor (MOS)
The cut-in voltage of field-effect transistor 401, increases mos field effect transistor 401 under normally pattern
ESD current drain abilities.
Mos field effect transistor in the circuit introduced by the present embodiment is in embodiment one
In describe in detail, so be not repeated herein.As long as the metal oxide semiconductcor field effect provided including the present embodiment one
The clamp circuit of transistor is answered, belongs to the scope to be protected of the application.
Based on same inventive concept, this application provides the SOI integrated circuits of the clamp circuit including embodiment two, refer to
Embodiment three.
Embodiment three
The silicon SOI integrated circuits in a kind of dielectric substrate are present embodiments provided, the circuit includes retouching in embodiment two
The clamp circuit for electrostatic protection stated, the clamp circuit include the MOS field described in embodiment one
Effect transistor, the mos field effect transistor include：
Substrate, the oxide skin(coating) on the substrate, the silicon layer on the oxide skin(coating)；
Active area and drain region are set on the silicon layer, they are channel region between the source region and the drain region, wherein, the source
Area and the drain region are the heavy doping of the first doping type；
Polysilicon is provided with the channel region, the polysilicon is the Metal-Oxide Semiconductor field effect transistor
The grid of pipe, wherein, the first end region of the grid is the heavy doping of the first doping type, the grid except described the
Region outside one end region is the heavy doping of the second doping type, first doping type and second doping type
Differ, the first end region is the grid close to the region in the drain region.
In the embodiment of the present application, the clamp circuit is detection circuit flip-over type clamp circuit.
Since the clamp circuit in the SOI integrated circuits described in the present embodiment has been situated between in detail in embodiment two
Continue, so be not repeated herein.As long as the clamp circuit described including the present embodiment two, belongs to the model to be protected of the application
Enclose.
Technical solution in above-mentioned the embodiment of the present application, at least has the following technical effect that or advantage：
Body pipe, clamp circuit and integrated circuit provided by the embodiments of the present application, set the close drain region of grid polycrystalline silicon
First end region is the heavy doping of doping type identical with source-drain area, to reduce the electric field of grid leak overlapping region, so as to reduce
Grid induced drain leakage current (gate-induced drain leakage, GIDL), further sets removing for grid polycrystalline silicon
Other regions outside the first end region are different from channel region doping type, to properly increase the threshold value of channel region electricity
Pressure, further reduces sub-threshold leakage.It is improved by the doping to polysilicon to reduce electric leakage, it is not necessary to adjust raceway groove
Length L or channel width W, can realize reduction electric leakage on the basis of ESD protective capabilities are ensured.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and scope.In this way, if these modifications and changes of the present invention belongs to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these modification and variations.
Claims (10)
- A kind of 1. mos field effect transistor, it is characterised in that including：Substrate, the oxide skin(coating) on the substrate, the silicon layer on the oxide skin(coating)；Active area and drain region are set on the silicon layer, be channel region between the source region and the drain region, wherein, the source region with The drain region is the heavy doping of the first doping type；Polysilicon is provided with the channel region, the polysilicon is the Metal-Oxide Semiconductor field-effect transistor Grid, wherein, the first end region of the grid is the heavy doping of the first doping type, and the grid removes the first end Region outside portion region is the heavy doping of the second doping type, first doping type and second doping type not phase Together, the first end region is the grid close to the region in the drain region.
- 2. transistor as claimed in claim 1, it is characterised in that the transistor is imitated for field of the channel width more than 2000um Answer transistor BigFET.
- 3. transistor as claimed in claim 1, it is characterised in that：First doping type adulterates for N+, and second doping type adulterates for P+；Alternatively,First doping type adulterates for P+, and second doping type adulterates for N+.
- 4. transistor as claimed in claim 1, it is characterised in that be provided with dioxy between the polysilicon and the channel region SiClx layer.
- 5. transistor as claimed in claim 1, it is characterised in that under conditions of the grid is not powered on, the channel region The first crossover region is formed between the source region, the second crossover region is formed between the channel region and the drain region；Wherein, it is described First end region all covers second crossover region.
- 6. transistor as claimed in claim 1, it is characterised in that the transistor is used for clamp circuit.
- 7. a kind of clamp circuit, it is characterised in that the clamp circuit includes mos field effect transistor, institute Stating mos field effect transistor includes：Substrate, the oxide skin(coating) on the substrate, the silicon layer on the oxide skin(coating)；Active area and drain region are set on the silicon layer, be channel region between the source region and the drain region, wherein, the source region with The drain region is the heavy doping of the first doping type；Polysilicon is provided with the channel region, the polysilicon is the Metal-Oxide Semiconductor field-effect transistor Grid, wherein, the first end region of the grid is the heavy doping of the first doping type, and the grid removes the first end Region outside portion region is the heavy doping of the second doping type, first doping type and second doping type not phase Together, the first end region is the grid close to the region in the drain region.
- 8. clamp circuit as claimed in claim 6, it is characterised in that the clamp circuit is detection circuit flip-over type clamper electricity Road.
- 9. the silicon SOI integrated circuits in a kind of dielectric substrate, it is characterised in that the circuit includes the clamper for electrostatic protection Circuit, the clamp circuit include mos field effect transistor, the metal oxide semiconductor field-effect Transistor includes：Substrate, the oxide skin(coating) on the substrate, the silicon layer on the oxide skin(coating)；Active area and drain region are set on the silicon layer, be channel region between the source region and the drain region, wherein, the source region with The drain region is the heavy doping of the first doping type；Polysilicon is provided with the channel region, the polysilicon is the Metal-Oxide Semiconductor field-effect transistor Grid, wherein, the first end region of the grid is the heavy doping of the first doping type, and the grid removes the first end Region outside portion region is the heavy doping of the second doping type, first doping type and second doping type not phase Together, the first end region is the grid close to the region in the drain region.
- 10. integrated circuit as claimed in claim 9, it is characterised in that the clamp circuit is detection circuit flip-over type clamper Circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710875844.4A CN108039365B (en) | 2017-09-25 | 2017-09-25 | Transistor, clamping circuit and integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710875844.4A CN108039365B (en) | 2017-09-25 | 2017-09-25 | Transistor, clamping circuit and integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660869A (en) * | 2019-10-27 | 2020-01-07 | 南京飞芯电子科技有限公司 | Method for forming enhancement mode field effect transistor |
| WO2023020020A1 (en) * | 2021-08-20 | 2023-02-23 | 长鑫存储技术有限公司 | Electro-static protection device and electronic apparatus |
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| US20080308870A1 (en) * | 2007-06-15 | 2008-12-18 | Qimonda Ag | Integrated circuit with a split function gate |
| TW200950086A (en) * | 2008-05-28 | 2009-12-01 | Samsung Electronics Co Ltd | Semiconductor device having transistor and method of manufacturing the same |
| CN101740627A (en) * | 2008-11-26 | 2010-06-16 | 阿尔特拉公司 | Asymmetric metal-oxide-semiconductor transistors |
| JP2016149442A (en) * | 2015-02-12 | 2016-08-18 | ソニー株式会社 | Transistor, protection circuit, and method of manufacturing transistor |
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| US20080308870A1 (en) * | 2007-06-15 | 2008-12-18 | Qimonda Ag | Integrated circuit with a split function gate |
| TW200950086A (en) * | 2008-05-28 | 2009-12-01 | Samsung Electronics Co Ltd | Semiconductor device having transistor and method of manufacturing the same |
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| JP2016149442A (en) * | 2015-02-12 | 2016-08-18 | ソニー株式会社 | Transistor, protection circuit, and method of manufacturing transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110660869A (en) * | 2019-10-27 | 2020-01-07 | 南京飞芯电子科技有限公司 | Method for forming enhancement mode field effect transistor |
| WO2023020020A1 (en) * | 2021-08-20 | 2023-02-23 | 长鑫存储技术有限公司 | Electro-static protection device and electronic apparatus |
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| CN108039365B (en) | 2021-01-12 |
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