CN108037146A - Based on the transmission electron microscope sample preparation method non-precisely positioned - Google Patents
Based on the transmission electron microscope sample preparation method non-precisely positioned Download PDFInfo
- Publication number
- CN108037146A CN108037146A CN201711139401.5A CN201711139401A CN108037146A CN 108037146 A CN108037146 A CN 108037146A CN 201711139401 A CN201711139401 A CN 201711139401A CN 108037146 A CN108037146 A CN 108037146A
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- Prior art keywords
- failpoint
- sample
- marked region
- section
- wedge shape
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
Abstract
The invention discloses a kind of based on the transmission electron microscope sample preparation method non-precisely positioned, belong to technical field of semiconductors.The described method includes：Failure analysis chip is provided, the failpoint in failure analysis chip is positioned and marks to obtain marked region；The first wedge shape of cutting cavity in the side of marked region, and to be thinned until observing failpoint close to the section of marked region in the first wedge shape cavity；Protective layer is formed on the section for observe failpoint；In the second wedge shape of opposite side cutting cavity of marked region, and to close to the section of marked region be thinned until obtaining the first sample of preset thickness in the second wedge shape cavity；To being thinned after the bottom progress U-shaped cut-out of first sample, transmission electron microscope sample is obtained.Method in the present invention, can effectively avoid cutting by mistake for failpoint, and has switched to the one side of failpoint and be damaged in subsequent technique or splash dirty, so as to improve sample preparation success rate, improve observation result.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of prepared based on the transmission electron microscope sample non-precisely positioned
Method.
Background technology
Integrated circuit fails unavoidably during development, production and use, with people to product quality and reliably
Property require continuous improvement, failure analysis work also seems more and more important.Analyzed by chip failure, integrated electricity can be helped
The defects of road designer is found in design, technological parameter mismatch or design with operation in it is improper the problems such as；At the same time
Failure analysis is to determine the necessary means of failure mechanism, can be that effective fault diagnosis is submitted necessary information, to design work
Cheng Shi continuously improves or repairs the design of chip, and being allowed to more coincide with design specification provides necessary feedback；Failure analysis
The validity of different test vectors can also be assessed, necessary supplement is provided for production test, is carried for validation test process optimization
For necessary Information base.
Current failure analysis flow, usually carries out accurately to failpoint (or referred to as defect or referred to as address)
After positioning, failpoint is prepared into thickness as 100 nanometers using focused ion beam (Focused Ion beam, FIB) microscope
Sample, reuse transmission electron microscope to sample carry out structural analysis, finally determine failure model.It is and accurate fixed for can not achieve
For the failure analysis type of position failpoint (defect), then need to carry out side cutting edge to sample using focused ion beam microscope
Observation, and in the process, it will usually the side there are sample has switched to failpoint, and opposite side leaves thicker residual
Situation, need high-current ion beam to be thinned at this time, then the side for having arrived at failpoint then can be by ion beam damage
Or splash it is dirty so that influence follow-up transmission electron microscope (Transmission Electron Microscope, TEM) to lose
Imitate the observation and analysis of point.Meanwhile also exist due to the spot placement accuracy risk that is inadequate, and being cut that fails by mistake.
The content of the invention
According to the embodiment of the present invention, there is provided a kind of based on the transmission electron microscope sample preparation method non-precisely positioned, bag
Include：
Failure analysis chip is provided, the failpoint in the failure analysis chip is positioned and marks to obtain mark zone
Domain；
The first wedge shape cavity is cut in the side of the marked region, and to the close mark in the described first wedge shape cavity
The section in note region be thinned until observing failpoint；
Protective layer is formed on the section for observe failpoint；
The second wedge shape cavity is cut in the opposite side of the marked region, and to close described in the described second wedge shape cavity
The section of marked region be thinned until obtaining the first sample of preset thickness；
To being thinned after the bottom progress U-shaped cut-out of the first sample, transmission electron microscope sample is obtained.
Alternatively, the failpoint in the failure analysis chip is positioned using low-light microscope, is beaten using laser
Mark machine is marked to obtain marked region to the failpoint of positioning.
Alternatively, wedge-shaped figure is selected in focused ion bundle board, and using focused ion beam in the marked region
Side cutting first wedge shape cavity；
Alternatively, the wedge-shaped figure is selected in focused ion bundle board, and using focused ion beam in the mark
The second wedge shape of opposite side cutting cavity in region.
Alternatively, rectangular graph is selected in focused ion bundle board, and using focused ion beam to the described first wedge shape
Be thinned until observing failpoint close to the section of the marked region in cavity；
Alternatively, the rectangular graph is selected in focused ion bundle board, and using focused ion beam to described second
Close to the section of the marked region be thinned until obtaining the first sample of preset thickness in wedge-shaped cavity.
Alternatively, the side of the marked region and the opposite side of the marked region are opposite both sides.
Alternatively, using the deposition probe integrated in focused ion beam Electronic Speculum, deposited on the section for observe failpoint
The material different from the section forms protective layer.
Alternatively, formed before protective layer, further included on the section for observe failpoint：By the failure analysis chip
Gradient zero, and rotate 180 degree.
Alternatively, it is described to close to the section of the marked region be thinned until obtaining in the described second wedge shape cavity
The first sample of preset thickness, is specially：To described second wedge shape cavity in close to the marked region section carry out be thinned until
Obtain the first sample of 2 micron thickness.
Alternatively, after to the bottom progress U-shaped cut-out of the first sample, to side of the first sample containing matcoveredn and be free of
The opposite side of protective layer is thinned, and obtains transmission electron microscope sample.
The advantage of the invention is that：
Method in the present invention, in the case of the spot placement accuracy deficiency that fails, can quickly navigate to failpoint, have
The generation for avoiding failpoint and cutting phenomenon by mistake of effect；And by forming protective layer on the section for be able to observe that failpoint, it is right
Failpoint has been switched in the side of sample and opposite side also has a large amount of remaining situations, and carry out U-shaped in sample bottom and cut
During disconnected, can effectively avoid sample switched to failpoint side be focused ion beam damage or splash it is dirty so that
Sample preparation success rate is improved, improves observation result.
Brief description of the drawings
By reading the detailed description of hereafter preferred embodiment, it is various other the advantages of and benefit it is common for this area
Technical staff will be clear understanding.Attached drawing is only used for showing the purpose of preferred embodiment, and is not considered as to the present invention
Limitation.And in whole attached drawing, identical component is denoted by the same reference numerals.In the accompanying drawings：
Attached drawing 1 is provided by the invention a kind of based on the transmission electron microscope sample preparation method flow chart non-precisely positioned；
Attached drawing 2 is the structure domain of failure analysis chip provided by the invention；
Attached drawing 3 to attached drawing 11 is provided by the invention a kind of based in the transmission electron microscope sample preparation method non-precisely positioned
Structure change schematic diagram.
Embodiment
The illustrative embodiments of the disclosure are more fully described below with reference to accompanying drawings.Although this public affairs is shown in attached drawing
The illustrative embodiments opened, it being understood, however, that may be realized in various forms the disclosure without the reality that should be illustrated here
The mode of applying is limited.Conversely, there is provided these embodiments are to be able to be best understood from the disclosure, and can be by this public affairs
The scope opened completely is communicated to those skilled in the art.
According to the embodiment of the present invention, there is provided it is a kind of based on the transmission electron microscope sample preparation method non-precisely positioned, such as
Shown in Fig. 1, including：
Failure analysis chip is provided, the failpoint in failure analysis chip is positioned and marks to obtain marked region；
The first wedge shape cavity is cut in the side of marked region, and to the section of close marked region in the first wedge shape cavity
Be thinned until observing failpoint；
Protective layer is formed on the section for observe failpoint；
In the second wedge shape of opposite side cutting cavity of marked region, and to being cut in the second wedge shape cavity close to marked region
Face be thinned until obtaining the first sample of preset thickness；
To being thinned after the bottom progress U-shaped cut-out of first sample, transmission electron microscope sample is obtained.
According to the embodiment of the present invention, there is provided failure analysis chip, as shown in Fig. 2, including：Cellular zone (Cell
Area area (Decoder Area), caching of page area (Page Buffer Area), periphery ＆ pads area (Periphery＆Pad), are decoded
Area)。
According to the embodiment of the present invention, the failpoint in failure analysis chip is positioned using low-light microscope,
The failpoint of positioning is marked to obtain marked region using laser marking machine；Wherein, the structural representation of marked region such as Fig. 3
It is shown.
Need explanatorily, in the present invention, in Fig. 4 into Figure 11, only illustrate the region in dotted line frame in Fig. 3.
According to the embodiment of the present invention, as shown in Figure 4 and Figure 5, wedge-shaped figure is selected in focused ion bundle board, and
Using focused ion beam in the first wedge shape of the side of marked region cutting cavity；Histogram is selected in focused ion bundle board
Shape, and using focused ion beam to be thinned until observing failure close to the section of marked region in the first wedge shape cavity
Point.
Wherein, wedge-shaped figure is specially Rectangle figures, and rectangular graph is specially Cleaning figures.
According to the embodiment of the present invention, as shown in fig. 6, using in focused ion beam Electronic Speculum integrate deposition probe,
It was observed that the material different from section is deposited on the section of failpoint forms protective layer.
Preferably, in the present embodiment, using the deposition probe integrated in focused ion beam Electronic Speculum, failpoint is being observed
Section on deposit carbon formed protective layer；
It may be noted that ground, in certain embodiments, when oxide does not form judgement influence in the constituent in section, also
The deposition probe integrated in focused ion beam Electronic Speculum can be used, deposition oxide, which is formed, on the section for observe failpoint protects
Sheath.
In the present invention, by forming protective layer on the section for observe failpoint, switched to for the side of sample
Failpoint and opposite side also have a large amount of remaining situations, and carries out U-shaped cutting-off process in sample bottom, can be effective
Avoid the side that sample has switched to failpoint from being focused ion beam damage or splash dirty, and then improve sample preparation success rate, and change
It has been apt to observation result.
According to the embodiment of the present invention, formed before protective layer, further included on the section for observe failpoint：It will lose
The gradient zero of analysis chip is imitated, and rotates 180 degree.
In the present embodiment, due to the special designing of focused ion bundle board, integrated using in focused ion beam Electronic Speculum
Deposition probe deposit protective layer on the section for observe failpoint before, it is necessary to which the gradient of failure analysis chip is returned
Zero, and 180 degree is rotated, to be clearly seen that the section.
According to the embodiment of the present invention, as shown in fig. 7, the side of the marked region and the marked region it is another
Side is opposite both sides.
According to the embodiment of the present invention, as shown in Figure 7 and Figure 8, wedge-shaped figure is selected in focused ion bundle board, and
Using focused ion beam in the second wedge shape of opposite side cutting cavity of marked region；Histogram is selected in focused ion bundle board
Shape, and using focused ion beam to close to the section of marked region be thinned until obtaining preset thickness in the second wedge shape cavity
First sample.
Wherein, wedge-shaped figure is specially Rectangle figures, and rectangular graph is specially Cleaning figures.
According to the embodiment of the present invention, to be thinned until obtaining close to the section of marked region in the second wedge-shaped cavity
To the first sample of preset thickness, it is specially：It is micro- up to obtaining 2 to close to the section of marked region be thinned in the second wedge shape cavity
The first sample of meter Hou Du.
According to the embodiment of the present invention, U-shaped cut-out is carried out to the bottom of first sample by focused ion beam, i.e., to first sample into
The separation of row bottom, its structural representation are as shown in Figure 9.
According to the embodiment of the present invention, after to the bottom progress U-shaped cut-out of first sample, to side of the first sample containing matcoveredn
And the opposite side without protective layer is thinned, and obtains transmission electron microscope sample.
Specifically, as shown in Figure 10 and Figure 11, after being thinned side of the first sample containing matcoveredn to remove protective layer,
The opposite side of first sample be thinned until obtaining the transmission electron microscope sample for being beneficial to observation and analysis.
Method in the present invention, in the case of the spot placement accuracy deficiency that fails, can quickly navigate to failpoint, have
The generation for avoiding failpoint and cutting phenomenon by mistake of effect；And by forming protective layer on the section for be able to observe that failpoint, it is right
Failpoint has been switched in the side of sample and opposite side also has a large amount of remaining situations, and carry out U-shaped in sample bottom and cut
During disconnected, can effectively avoid sample switched to failpoint side be focused ion beam damage or splash it is dirty so that
Sample preparation success rate is improved, improves observation result.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of the claim
Subject to enclosing.
Claims (9)
- It is 1. a kind of based on the transmission electron microscope sample preparation method non-precisely positioned, it is characterised in that including：Failure analysis chip is provided, the failpoint in the failure analysis chip is positioned and marks to obtain marked region；The first wedge shape cavity is cut in the side of the marked region, and to the close mark zone in the described first wedge shape cavity The section in domain be thinned until observing failpoint；Protective layer is formed on the section for observe failpoint；The second wedge shape cavity is cut in the opposite side of the marked region, and to the close mark in the described second wedge shape cavity The section in region be thinned until obtaining the first sample of preset thickness；To being thinned after the bottom progress U-shaped cut-out of the first sample, transmission electron microscope sample is obtained.
- 2. according to the method described in claim 1, it is characterized in that, using low-light microscope in the failure analysis chip Failpoint is positioned, and the failpoint of positioning is marked to obtain marked region using laser marking machine.
- 3. according to the method described in claim 1, it is characterized in that,Select wedge-shaped figure in focused ion bundle board, and using focused ion beam in the side of marked region cutting the One wedge shape cavity；The wedge-shaped figure is selected in focused ion bundle board, and uses focused ion beam in the opposite side of the marked region The wedge shape of cutting second cavity.
- 4. according to the method described in claim 1, it is characterized in that,Rectangular graph is selected in focused ion bundle board, and using focused ion beam to close institute in the described first wedge shape cavity The section for stating marked region be thinned until observing failpoint；The rectangular graph is selected in focused ion bundle board, and using focused ion beam to being leaned in the described second wedge shape cavity The section of the nearly marked region be thinned until obtaining the first sample of preset thickness.
- 5. according to the method described in claim 1, it is characterized in that, the side of the marked region and the marked region it is another Side is opposite both sides.
- 6. according to the method described in claim 1, it is characterized in that, using in focused ion beam Electronic Speculum integrate deposition probe, The material different from the section is deposited on the section for observe failpoint and forms protective layer.
- 7. according to the method described in claim 1, it is characterized in that, on the section for observe failpoint formed protective layer it Before, further include：The gradient of the failure analysis chip is zeroed, and rotates 180 degree.
- It is 8. according to the method described in claim 1, it is characterized in that, described to the close mark in the described second wedge shape cavity The section in region be thinned until obtaining the first sample of preset thickness, specially：To close described in the described second wedge shape cavity The section of marked region be thinned until obtaining the first sample of 2 micron thickness.
- 9. according to the method described in claim 1, it is characterized in that, after carrying out U-shaped cut-out to the bottom of the first sample, to described Side of the first sample containing matcoveredn and the opposite side without protective layer are thinned, and obtain transmission electron microscope sample.
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| CN201711139401.5A CN108037146A (en) | 2017-11-16 | 2017-11-16 | Based on the transmission electron microscope sample preparation method non-precisely positioned |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109406555A (en) * | 2018-10-15 | 2019-03-01 | 上海华力微电子有限公司 | A kind of sample removes hierarchical method |
| CN109580636A (en) * | 2018-12-03 | 2019-04-05 | 深圳市华星光电半导体显示技术有限公司 | Defects of display panel marking tool |
| CN110687138A (en) * | 2019-09-05 | 2020-01-14 | 长江存储科技有限责任公司 | Method and device for measuring semiconductor structure and extracting boundary characteristic |
| CN111812124A (en) * | 2020-06-24 | 2020-10-23 | 上海华力集成电路制造有限公司 | Failure analysis layer removing method |
| CN112179931A (en) * | 2020-09-24 | 2021-01-05 | 长江存储科技有限责任公司 | Physical failure analysis sample and preparation method thereof |
| CN112179927A (en) * | 2020-09-17 | 2021-01-05 | 长江存储科技有限责任公司 | Transmission electron microscope sample, preparation method thereof and failure analysis method of structure to be detected |
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| CN114323827A (en) * | 2020-09-30 | 2022-04-12 | 中国科学院微电子研究所 | Preparation method and device of transmission electron microscope sample |
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| CN112179927B (en) * | 2020-09-17 | 2021-12-28 | 长江存储科技有限责任公司 | Transmission electron microscope sample, preparation method thereof and failure analysis method of structure to be detected |
| CN112179927A (en) * | 2020-09-17 | 2021-01-05 | 长江存储科技有限责任公司 | Transmission electron microscope sample, preparation method thereof and failure analysis method of structure to be detected |
| CN112179931A (en) * | 2020-09-24 | 2021-01-05 | 长江存储科技有限责任公司 | Physical failure analysis sample and preparation method thereof |
| CN112179931B (en) * | 2020-09-24 | 2021-10-19 | 长江存储科技有限责任公司 | Physical failure analysis sample and preparation method thereof |
| CN114323827A (en) * | 2020-09-30 | 2022-04-12 | 中国科学院微电子研究所 | Preparation method and device of transmission electron microscope sample |
| CN112630238A (en) * | 2020-11-25 | 2021-04-09 | 长江存储科技有限责任公司 | Method for measuring cavity |
| CN112630238B (en) * | 2020-11-25 | 2023-12-26 | 长江存储科技有限责任公司 | Measuring method for cavity |
| CN112881439A (en) * | 2021-03-09 | 2021-06-01 | 洪启集成电路(珠海)有限公司 | OLED TEM sample preparation method and OLED TEM sample |
| CN114486422A (en) * | 2021-12-28 | 2022-05-13 | 长江存储科技有限责任公司 | Test sample preparation method of 3D memory device |
| CN116337903A (en) * | 2023-04-11 | 2023-06-27 | 胜科纳米(苏州)股份有限公司 | Ultrathin electron microscope sample of 3DNADA flash memory vertical channel and sample preparation method thereof |
| CN116337903B (en) * | 2023-04-11 | 2023-12-22 | 胜科纳米(苏州)股份有限公司 | Ultrathin electron microscope sample of 3DNADA flash memory vertical channel and sample preparation method thereof |
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