CN106525885A - Preparation method of transmission electron microscope sample - Google Patents
Preparation method of transmission electron microscope sample Download PDFInfo
- Publication number
- CN106525885A CN106525885A CN201610975312.3A CN201610975312A CN106525885A CN 106525885 A CN106525885 A CN 106525885A CN 201610975312 A CN201610975312 A CN 201610975312A CN 106525885 A CN106525885 A CN 106525885A
- Authority
- CN
- China
- Prior art keywords
- sample
- plane
- layer
- electron microscope
- transmission electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2202—Preparing specimens therefor
Abstract
The invention provides a preparation method of a transmission electron microscope sample, and belongs to the technical field of semiconductor manufacturing. The preparation method comprises following steps: a plurality of position marks are arranged on a layer to be observed; a first plane surface on the upper part of a micro lens layer is electroplated with a platinum protective layer; an invalid chip is cut along a direction vertical to the firs plane surface so as to obtain a sample to be detected containing invalid points and the position marks; a second plane surface, vertical to the first plane surface, of the sample to be detected is glued onto a first bearing substrate; the sample to be detected and the first bearing substrate are cut along a direction vertical to the second plane surface so as to obtain a three-dimensional transmission electron microscope sample containing the invalid points and the position marks, wherein the bottom of the three-dimensional transmission electron microscope sample is glued with a rest part of the first bearing substrate left by cutting; and the three-dimensional transmission electron microscope sample is glued onto a second bearing substrate, and is subjected to thickness reducing treatment so as to obtain the transmission electron microscope sample containing the invalid points and the position marks, and the transmission electron microscope sample is stained. The beneficial effect of the preparation method is that a problem of the transmission electron microscope sample of BSI chips that effective staining is impossible to realize is solved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of preparation method of sample for use in transmitted electron microscope.
Background technology
Transmission electron microscope (transmission electron microscope, TEM) is used as the important work of electron micrology
Tool, generally observing the microstructure of material, including crystal morphology, pore size, multi-phase crystallization and lattice defect etc., its point
Resolution ratio can reach 0.1nm.The operation principle of the transmission electron microscope is as follows：By the sample for use in transmitted electron microscope (TEM sample) that need to be detected
TEM sight chambers are put into, with TEM sample described in the electron beam irradiation that high pressure accelerates, the pattern of TEM sample are amplified and is projected to screen
On, then photograph is analyzed.In semiconductor processing, it is often necessary to produce plane TEM sample, with observe on wafer institute
The a certain Rotating fields of the chip of manufacture.
When failure analysis is carried out to semiconductor chip, for source electrode and the case of drain ion implantation concentration failure mode
Example, arrives fail address surely by electrical property failure positioning analysis (Electrical Failure Analysis, EFA) means first,
Verify whether the address source electrode and drain electrode have ion implanting by way of dyeing (stain).General stain methods have two
Kind, one kind is section sample stain, and another kind is TEM chip sample stain.For TEM chip sample stain, first
Using focused ion beam (Focused Ion beam, FIB) encase destination address be prepared into thickness for the TEM of 100nm or so it is thin
Piece sample, then by TEM thin slices be placed in specific stain it is sour in several seconds of stain, extract TEM chip samples, using tem observation phase
The microstructure of off position, the position for typically having ion implanting can be etched into cavity, without then not having where ion implanting
There is etching to form cavity, so judge with this whether destination address has ion implanting, so as to judge failure mode.
As shown in figure 1, for back side illumination image sensor (Back Illuminated Image common in semiconductor chip
Sensor, BSI) chip sectional view, which is included from top to bottom successively：Back-illuminated type (Back Illuminated Image,
BSI), silicon wafer layer (Silicon)/oxide skin(coating) (Oxide), three big portion of front illuminated (Frontside Illumination, FSI)
Point.BSI parts include from top to bottom：Lenticule (Macro lens), color filter film (RGB).FSI is wrapped part from top to bottom
Include：Photodiode ion implanted regions (the Target address in figure), the first metal layer (Metal 1, M1), the second gold medal
Category layer (Metal 2, M2), the 3rd metal level (Metal 3, M3), the 4th metal level (Metal4, M4), fifth metal layer
(Metal 5, M5).Wherein, the distance of Macro lens to Target address is 4.3um.
For BSI chips, it would be desirable to carry out TEM sample stain to its photodiode ion implanted regions, according to just
Normal step FIB encases destination address and makes TEM chip samples, lenticule (macro lens) portion of TEM chip samples
Divide thickness to be 100nm or so, but photodiode segment thickness will be greater than 100nm, if the stain times are short, ion note
Enter region and cannot be etched into cavity, stain time length, ion implanted regions and be not ion implanted region will be by while etching
Completely, it is impossible to obtain preferable TEM sample stain result.
Therefore, need at present to develop a kind of stain of the TEM chip sample ion implanted regions for BSI chips newly sides
Method, obtains the controllable stain methods for BSI chips, solves the problems, such as that BSI chips TEM sample effectively cannot be dyeed.
The content of the invention
For problems of the prior art, the invention provides a kind of transmission electron microscope sample that can solve the problem that BSI chips
The preparation method of the sample for use in transmitted electron microscope of the problem that product effectively cannot be dyeed.
The present invention is adopted the following technical scheme that：
A kind of preparation method of sample for use in transmitted electron microscope, is applied to detect the failpoint of chip failing, the failure
Chip includes from top to bottom successively：Microlens layer, color filter layers, oxide skin(coating), silicon wafer layer, photodiode layer, plural number
Individual metal level, the photodiode layer are the layer to be observed of the chip failing；Methods described includes：
Step S1, a plurality of position marks are set on the layer to be observed, the position mark is around the failpoint
Arrange；Electrodeposition platinum protective layer in step S2, the first plane above the microlens layer of the chip failing；
Step S3, using focused ion beam along cutting to the chip failing perpendicular to the direction of first plane
Cut, obtain the detected sample with the failpoint and the position mark；
Step S4, the second plane perpendicular with first plane on the detected sample is pasted on into one first holds
Carry on matrix；
Step S5, using focused ion beam along perpendicular to the direction of second plane to the detected sample and described
First bearing substrate carries out cutting operation, obtains with the failpoint and the position mark, and bottom be attached with it is described
The stereo transmission electron microscopic sample of remainder after the cutting of first bearing substrate；
Step S6, by the stereo transmission electron microscopic sample, the face of first plane of the correspondence detected sample
It is pasted on one second bearing substrate；
Step S7, thinning operation is carried out to the stereo transmission electron microscopic sample, obtained with the failpoint and described
The plane transmission electron microscopic sample of position mark；
Step S8, dying operation is carried out to the plane transmission electron microscopic sample using dyeing acid.
Preferably, by laser or the focused ion beam setting position mark on the layer to be observed.
Preferably, the detected sample for obtaining in step S3 includes from top to bottom successively：The microlens layer,
The color filter layers, the oxide skin(coating), the silicon wafer layer, the photodiode layer, a plurality of metal levels.
Preferably, the detected sample is pasted by hot-setting adhesive or epoxy glue with first bearing substrate.
Preferably, the length × width × height of first bearing substrate be 1cm × 1cm × 700um, first bearing substrate
Including the 3rd plane, length × a width of 1cm × 1cm of the 3rd plane, second plane are pasted with the 3rd plane.
Preferably, the stereo transmission electron microscopic sample for obtaining in step S5 once includes from top to bottom：The oxygen
First gold medal adjacent with the photodiode layer in compound layer, the silicon wafer layer, the photodiode layer, the metal level
The remaining part of first bearing substrate after category layer, and the cutting operation.
Preferably, the stereo transmission electron microscopic sample is glued by hot-setting adhesive or epoxy glue with second bearing substrate
Patch.
Preferably, the thinning operation includes：
A groove is dug respectively in the both sides of the layer described to be observed of the stereo transmission electron microscopic sample, obtains a plane saturating
Penetrate the thick piece of electron microscopic sample；
The thick piece of the thinning plane transmission electron microscopic sample, obtains the described flat of the predetermined thickness after the thinning operation
Face sample for use in transmitted electron microscope.
Preferably, the thickness of the thick piece of the plane transmission electron microscopic sample is 3.5um (equivalent to 3 pixel width), and/
Or
The thickness of the plane transmission electron microscopic sample is 100nm.
Preferably, first bearing substrate is silicon chip；And/or
Second bearing substrate is silicon chip.
The invention has the beneficial effects as follows：Dyeing behaviour is carried out together with plane transmission electron microscopic sample and the first bearing substrate
Make, then extract plane transmission electron microscopic sample, solve the problems, such as that the sample for use in transmitted electron microscope of BSI chips effectively cannot be dyeed.
Description of the drawings
Fig. 1 is the profile of BSI chips in prior art；
During Fig. 2 is a preferred embodiment of the present invention, the schematic diagram of step S1；
During Fig. 3 is a preferred embodiment of the present invention, the schematic diagram of step S2；
During Fig. 4 is a preferred embodiment of the present invention, the schematic diagram of step S3；
During Fig. 5 is a preferred embodiment of the present invention, the schematic diagram of step S4；
During Fig. 6 is a preferred embodiment of the present invention, the schematic diagram of step S5；
During Fig. 7 is a preferred embodiment of the present invention, the schematic diagram of step S6；
During Fig. 8 is a preferred embodiment of the present invention, the schematic diagram of step S7；
During Fig. 9 is a preferred embodiment of the present invention, the flow chart of the preparation method of sample for use in transmitted electron microscope.
Specific embodiment
It should be noted that in the case where not conflicting, following technical proposals can be mutually combined between technical characteristic.
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is further described：
As shown in figs 1-9, a kind of preparation method of sample for use in transmitted electron microscope, is applied to carry out the failpoint 1 of chip failing
Detection, above-mentioned chip failing include from top to bottom successively：Microlens layer, color filter layers, oxide skin(coating), silicon wafer layer, photoelectricity
Diode layer, a plurality of metal levels, above-mentioned photodiode layer are the layer to be observed of above-mentioned chip failing；Said method includes：
Step S1, a plurality of position marks 2 are set on above-mentioned layer to be observed, above-mentioned position mark 2 is around above-mentioned failure
Point 1 is arranged；
Electrodeposition platinum protective layer in step S2, the first plane 3 above the above-mentioned microlens layer of above-mentioned chip failing；
Step S3, using focused ion beam along cutting to above-mentioned chip failing perpendicular to the direction of above-mentioned first plane 3
Cut, obtain the detected sample with above-mentioned failpoint 1 and above-mentioned position mark 2；
Step S4, the second plane 4 perpendicular with above-mentioned first plane 3 on above-mentioned detected sample is pasted on into one first
On bearing substrate 5；
Step S5, using focused ion beam along perpendicular to the direction of above-mentioned second plane 4 to above-mentioned detected sample and on
Stating the first bearing substrate 5 carries out cutting operation, obtains being attached with above-mentioned failpoint 1 and above-mentioned position mark 2, and bottom
The stereo transmission electron microscopic sample of remainder after the above-mentioned cutting of first bearing substrate 5；
Step S6, by above-mentioned stereo transmission electron microscopic sample, the face of above-mentioned first plane 3 of the above-mentioned detected sample of correspondence
It is pasted on one second bearing substrate 7；
Step S7, thinning operation is carried out to above-mentioned stereo transmission electron microscopic sample, obtained with above-mentioned failpoint 1 and above-mentioned
The plane transmission electron microscopic sample of position mark 2；
Step S8, dying operation is carried out to above-mentioned plane transmission electron microscopic sample using dyeing acid.
In the present embodiment, the detected sample of the above-mentioned plane transmission electron microscopic sample after dyeing acid is dyeed (is lost
Effect chip) extracting section out, which is observed using transmission electron microscope, result judges the mistake of above-mentioned chip failing according to the observation
Effect type.The position for having ion implanting can be etched into cavity, and the position without ion implanting is not then etched into cavity, institute
Judge with this whether destination address has ion implanting, so as to judge failure mode.
In preferred embodiment, above-mentioned position mark 2 is arranged in above-mentioned layer to be observed by laser or focused ion beam
On.
In the present embodiment, above-mentioned position mark 2 has two.
In preferred embodiment, the above-mentioned detected sample obtained in above-mentioned steps S3 includes from top to bottom successively：It is above-mentioned
It is microlens layer, above-mentioned color filter layers, above-mentioned oxide skin(coating), above-mentioned silicon wafer layer, above-mentioned photodiode layer, above-mentioned a plurality of
Metal level.
In the present embodiment, in above-mentioned steps 3, length × a width of 10pixel × 3pixel of above-mentioned detection print, highly with
Top microlens layer to fifth metal layer (above-mentioned metal level from top to bottom successively include the first metal layer M1, second metal layer M2,
3rd metal level M3, the 4th metal level M4, fifth metal layer M5, wherein, the first metal layer M1 and above-mentioned photodiode layer phase
It is adjacent) distance it is identical.
In preferred embodiment, above-mentioned detected sample is entered by hot-setting adhesive or epoxy glue with above-mentioned first bearing substrate 5
Row is pasted.
In preferred embodiment, the length × width × height of above-mentioned first bearing substrate 5 is 1cm × 1cm × 700um, above-mentioned the
One bearing substrate 5 includes the 3rd plane 6, length × a width of 1cm × 1cm of above-mentioned 3rd plane 6, above-mentioned second plane 4 with it is above-mentioned
3rd plane 6 is pasted.
In preferred embodiment, the above-mentioned stereo transmission electron microscopic sample obtained in above-mentioned steps S5 is once wrapped from top to bottom
Include：With above-mentioned photodiode layer phase in above-mentioned oxide skin(coating), above-mentioned silicon wafer layer, above-mentioned photodiode layer, above-mentioned metal level
Adjacent the first metal layer M1, and 5 remaining part of above-mentioned first bearing substrate after above-mentioned cutting operation.
In the present embodiment, the first bearing substrate 5 adopts length × a width of 1cm × 1cm, silicon chip of the thickness for 700um to focus on
First knife of the ion beam in cutting operation is parked in the position that oxide layer had just been cut, and the second knife is parked in above-mentioned the first metal layer
The position that M1 had just been cut, after the cutting operation of step S5, length × a height of 10pixel of stereo transmission electron microscopic sample ×
4pixel, width are distance of the oxide layer to the first metal layer M1.
In preferred embodiment, above-mentioned stereo transmission electron microscopic sample passes through hot-setting adhesive or ring with above-mentioned second bearing substrate 7
Oxygen glue is pasted.
In preferred embodiment, above-mentioned thinning operation includes：
A groove is dug respectively in the both sides of the layer above-mentioned to be observed of above-mentioned stereo transmission electron microscopic sample, obtains a plane saturating
Penetrate the thick piece of electron microscopic sample；
The thick piece of thinning above-mentioned plane transmission electron microscopic sample, obtains the above-mentioned flat of the predetermined thickness after above-mentioned thinning operation
Face sample for use in transmitted electron microscope.
In preferred embodiment, the thickness of the thick piece of above-mentioned plane transmission electron microscopic sample is 3.5um, equivalent to 3 pixel
(pixel) width.
In preferred embodiment, the thickness of above-mentioned plane transmission electron microscopic sample is 100nm.
In preferred embodiment, above-mentioned first bearing substrate 5 is silicon chip.
In preferred embodiment, above-mentioned second bearing substrate 7 is silicon chip.
By explanation and accompanying drawing, the exemplary embodiments of the ad hoc structure of specific embodiment are given, based on essence of the invention
God, can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident that.
Therefore, appending claims should regard whole variations and modifications of the true intention and scope that cover the present invention as.In power
In the range of sharp claim, any and all scope of equal value and content, are all considered as still belonging to the intent and scope of the invention.
Claims (10)
1. a kind of preparation method of sample for use in transmitted electron microscope, is applied to detect the failpoint of chip failing, the failure core
Piece includes from top to bottom successively：It is microlens layer, color filter layers, oxide skin(coating), silicon wafer layer, photodiode layer, a plurality of
Metal level, the photodiode layer are the layer to be observed of the chip failing；Characterized in that, methods described includes：
Step S1, a plurality of position marks are set on the layer to be observed, the position mark is arranged around the failpoint；
Electrodeposition platinum protective layer in step S2, the first plane above the microlens layer of the chip failing；
Step S3, using focused ion beam along cutting to the chip failing perpendicular to the direction of first plane, obtain
To the detected sample with the failpoint and the position mark；
Step S4, the second plane perpendicular with first plane on the detected sample is pasted on one first carrying base
On body；
Step S5, using focused ion beam along perpendicular to the direction of second plane to the detected sample and described first
Bearing substrate carries out cutting operation, obtains with the failpoint and the position mark, and bottom is attached with described first
The stereo transmission electron microscopic sample of remainder after bearing substrate cutting；
Step S6, will be on the stereo transmission electron microscopic sample, the face of first plane of the correspondence detected sample is pasted
On one second bearing substrate；
Step S7, thinning operation is carried out to the stereo transmission electron microscopic sample, obtained with the failpoint and the position
The plane transmission electron microscopic sample of mark；
Step S8, dying operation is carried out to the plane transmission electron microscopic sample using dyeing acid.
2. the preparation method of sample for use in transmitted electron microscope according to claim 1, it is characterised in that by laser or focus on from
Beamlet arranges the position mark on the layer to be observed.
3. the preparation method of sample for use in transmitted electron microscope according to claim 1, it is characterised in that obtain in step S3
The detected sample includes from top to bottom successively：The microlens layer, the color filter layers, the oxide skin(coating), institute
State silicon wafer layer, the photodiode layer, a plurality of metal levels.
4. the preparation method of sample for use in transmitted electron microscope according to claim 1, it is characterised in that the detected sample and institute
State the first bearing substrate to be pasted by hot-setting adhesive or epoxy glue.
5. the preparation method of sample for use in transmitted electron microscope according to claim 1, it is characterised in that first bearing substrate
Length × width × height is 1cm × 1cm × 700um, and first bearing substrate includes the 3rd plane, the length of the 3rd plane × wide
For 1cm × 1cm, second plane is pasted with the 3rd plane.
6. the preparation method of sample for use in transmitted electron microscope according to claim 1, it is characterised in that obtain in step S5
The stereo transmission electron microscopic sample includes from top to bottom successively：The oxide skin(coating), the silicon wafer layer, the photodiode
The first metal layer adjacent with the photodiode layer in layer, the metal level, and described first after the cutting operation
The remaining part of bearing substrate.
7. the preparation method of sample for use in transmitted electron microscope according to claim 1, it is characterised in that the stereo transmission Electronic Speculum sample
Product are pasted by hot-setting adhesive or epoxy glue with second bearing substrate.
8. the preparation method of sample for use in transmitted electron microscope according to claim 1, it is characterised in that the thinning operation includes：
A groove is dug respectively in the both sides of the layer described to be observed of the stereo transmission electron microscopic sample, obtains plane transmission electricity
The thick piece of mirror sample；
The thick piece of the thinning plane transmission electron microscopic sample, the plane for obtaining the predetermined thickness after the thinning operation are saturating
Penetrate electron microscopic sample.
9. the preparation method of sample for use in transmitted electron microscope according to claim 1, it is characterised in that the plane transmission Electronic Speculum sample
The thickness of the thick piece of product is 3.5um, and/or
The thickness of the plane transmission electron microscopic sample is 100nm.
10. the preparation method of sample for use in transmitted electron microscope according to claim 1, it is characterised in that first bearing substrate
For silicon chip；And/or
Second bearing substrate is silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610975312.3A CN106525885A (en) | 2016-11-07 | 2016-11-07 | Preparation method of transmission electron microscope sample |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610975312.3A CN106525885A (en) | 2016-11-07 | 2016-11-07 | Preparation method of transmission electron microscope sample |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106525885A true CN106525885A (en) | 2017-03-22 |
Family
ID=58350989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610975312.3A Pending CN106525885A (en) | 2016-11-07 | 2016-11-07 | Preparation method of transmission electron microscope sample |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106525885A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108037146A (en) * | 2017-11-16 | 2018-05-15 | 长江存储科技有限责任公司 | Based on the transmission electron microscope sample preparation method non-precisely positioned |
| CN111982643A (en) * | 2020-07-10 | 2020-11-24 | 安徽工程大学 | Preparation method of transmission electron microscope sample of metal material surface deformation layer |
| CN112179927A (en) * | 2020-09-17 | 2021-01-05 | 长江存储科技有限责任公司 | Transmission electron microscope sample, preparation method thereof and failure analysis method of structure to be detected |
| CN113466268A (en) * | 2021-06-30 | 2021-10-01 | 长江存储科技有限责任公司 | Combined sample and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100253145B1 (en) * | 1991-08-22 | 2000-04-15 | 가나이 쓰도무 | Sample separating method & analyzing method of separated sample |
| CN102023108A (en) * | 2009-09-23 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing transmission electron microscope sample |
| CN102455259A (en) * | 2010-10-18 | 2012-05-16 | 武汉新芯集成电路制造有限公司 | Planar transmission electron microscope (TEM) sample preparation method |
| CN103926266A (en) * | 2014-04-21 | 2014-07-16 | 武汉新芯集成电路制造有限公司 | Failure analysis method of semiconductor structure |
| CN105161440A (en) * | 2015-08-31 | 2015-12-16 | 上海华虹宏力半导体制造有限公司 | Fixed-point chemical junction dyeing method |
-
2016
- 2016-11-07 CN CN201610975312.3A patent/CN106525885A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100253145B1 (en) * | 1991-08-22 | 2000-04-15 | 가나이 쓰도무 | Sample separating method & analyzing method of separated sample |
| CN102023108A (en) * | 2009-09-23 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing transmission electron microscope sample |
| CN102455259A (en) * | 2010-10-18 | 2012-05-16 | 武汉新芯集成电路制造有限公司 | Planar transmission electron microscope (TEM) sample preparation method |
| CN103926266A (en) * | 2014-04-21 | 2014-07-16 | 武汉新芯集成电路制造有限公司 | Failure analysis method of semiconductor structure |
| CN105161440A (en) * | 2015-08-31 | 2015-12-16 | 上海华虹宏力半导体制造有限公司 | Fixed-point chemical junction dyeing method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108037146A (en) * | 2017-11-16 | 2018-05-15 | 长江存储科技有限责任公司 | Based on the transmission electron microscope sample preparation method non-precisely positioned |
| CN111982643A (en) * | 2020-07-10 | 2020-11-24 | 安徽工程大学 | Preparation method of transmission electron microscope sample of metal material surface deformation layer |
| CN111982643B (en) * | 2020-07-10 | 2022-07-12 | 安徽工程大学 | Preparation method of transmission electron microscope sample of metal material surface deformation layer |
| CN112179927A (en) * | 2020-09-17 | 2021-01-05 | 长江存储科技有限责任公司 | Transmission electron microscope sample, preparation method thereof and failure analysis method of structure to be detected |
| CN113466268A (en) * | 2021-06-30 | 2021-10-01 | 长江存储科技有限责任公司 | Combined sample and preparation method thereof |
| CN113466268B (en) * | 2021-06-30 | 2022-06-07 | 长江存储科技有限责任公司 | Combined sample and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106525885A (en) | Preparation method of transmission electron microscope sample | |
| CN103913358B (en) | The preparation method and failure analysis method of TEM sample | |
| CN103808540B (en) | Transmission electron microscope sample preparation method | |
| US11205599B2 (en) | Evaluation method of silicon epitaxial wafer | |
| CN104237567A (en) | Preparing method of ultra-thin plane transmission electron microscope sample | |
| TW200813418A (en) | Method of fabricating sample membrane for transmission electron microscopy analysis | |
| CN106289909B (en) | The method for preparing example of transmission electron microscope | |
| JP4951632B2 (en) | Method of manufacturing an integrated circuit | |
| US7923683B2 (en) | Method for treatment of samples for transmission electron microscopes | |
| CN103645075B (en) | Manufacturing method for TEM (Transmission Electron Microscope) sample and TEM sample | |
| CN104198241B (en) | A kind of method for preparing TEM sample | |
| US8426810B2 (en) | Method of planar imaging on semiconductor chips using focused ion beam | |
| CN104458371B (en) | Preparation method of TEM sample | |
| CN107860620B (en) | Transmission electron microscope sample and preparation method thereof | |
| DE102015106896B4 (en) | Process for processing a wafer | |
| US20210149172A1 (en) | Microscope Slide, Method for Manufacturing Microscope Slide, Observation Method, and Analysis Method | |
| JP2002228562A (en) | Sample preparing method for transmission electron microscope | |
| US20060094132A1 (en) | Method for analyzing the structure of deep trench capacitors and a preparation method thereof | |
| US7682844B2 (en) | Silicon substrate processing method for observing defects in semiconductor devices and defect-detecting method | |
| CN104181016B (en) | The Physical Analysis Methods of the location, deep trench bottom of deep trench product | |
| US6313480B1 (en) | Structure and method for evaluating an integrated electronic device | |
| DE102016116241A1 (en) | METHOD FOR PROCESSING A WAFERS AND METHOD FOR PROCESSING A CARRIER | |
| CN103855047B (en) | The physical analysis structure of deep trench product and method | |
| JP2017224695A (en) | Method of evaluating epitaxial layer of silicon epitaxial wafer and method of producing silicon epitaxial wafer | |
| US9360401B2 (en) | Sample stack structure and method for preparing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170322 |