CN108028200A - 用于改善毫秒退火系统中的处理均匀性的方法 - Google Patents
用于改善毫秒退火系统中的处理均匀性的方法 Download PDFInfo
- Publication number
- CN108028200A CN108028200A CN201680054608.XA CN201680054608A CN108028200A CN 108028200 A CN108028200 A CN 108028200A CN 201680054608 A CN201680054608 A CN 201680054608A CN 108028200 A CN108028200 A CN 108028200A
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- annealing system
- millisecond annealing
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
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- F27B17/0025—Especially adapted for treating semiconductor wafers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/16—Arrangements of air or gas supply devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562272817P | 2015-12-30 | 2015-12-30 | |
US62/272,817 | 2015-12-30 | ||
PCT/US2016/066561 WO2017116708A1 (en) | 2015-12-30 | 2016-12-14 | Features for improving process uniformity in a millisecond anneal system |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108028200A true CN108028200A (zh) | 2018-05-11 |
CN108028200B CN108028200B (zh) | 2022-05-27 |
Family
ID=59225810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680054608.XA Active CN108028200B (zh) | 2015-12-30 | 2016-12-14 | 用于改善毫秒退火系统中的处理均匀性的方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US10770309B2 (zh) |
KR (1) | KR102104468B1 (zh) |
CN (1) | CN108028200B (zh) |
TW (1) | TWI753873B (zh) |
WO (1) | WO2017116708A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US10840114B1 (en) * | 2016-07-26 | 2020-11-17 | Raytheon Company | Rapid thermal anneal apparatus and method |
US10786982B2 (en) * | 2017-01-26 | 2020-09-29 | Leander Kilian Gross | Method and device for separating different material layers of a composite component |
US20210043478A1 (en) * | 2019-08-07 | 2021-02-11 | Samsung Electronics Co., Ltd. | Pressure heating apparatus |
KR20210083411A (ko) * | 2019-12-26 | 2021-07-07 | 삼성디스플레이 주식회사 | 유리 기판 화학 강화로 장치 |
CN111755364B (zh) * | 2020-08-13 | 2023-04-07 | 抚州华成半导体科技有限公司 | 一种半导体二极管生产设备 |
CN112274143B (zh) * | 2020-12-29 | 2021-06-01 | 四川写正智能科技有限公司 | 一种人体存在状态的检测方法及检测装置 |
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CN1447980A (zh) * | 2000-07-06 | 2003-10-08 | 应用材料有限公司 | 对基体进行热处理 |
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JP2011040544A (ja) * | 2009-08-10 | 2011-02-24 | Toshiba Corp | 熱処理装置及び半導体装置の製造方法 |
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2016
- 2016-12-14 CN CN201680054608.XA patent/CN108028200B/zh active Active
- 2016-12-14 WO PCT/US2016/066561 patent/WO2017116708A1/en active Application Filing
- 2016-12-14 KR KR1020187006723A patent/KR102104468B1/ko active IP Right Grant
- 2016-12-14 US US15/378,580 patent/US10770309B2/en active Active
- 2016-12-21 TW TW105142449A patent/TWI753873B/zh active
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2020
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Also Published As
Publication number | Publication date |
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TWI753873B (zh) | 2022-02-01 |
US10770309B2 (en) | 2020-09-08 |
KR102104468B1 (ko) | 2020-04-27 |
TW201727751A (zh) | 2017-08-01 |
US20170194163A1 (en) | 2017-07-06 |
KR20180030232A (ko) | 2018-03-21 |
US20200402811A1 (en) | 2020-12-24 |
CN108028200B (zh) | 2022-05-27 |
WO2017116708A1 (en) | 2017-07-06 |
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