CN108022997A - A kind of light total reflection film of photovoltaic module - Google Patents
A kind of light total reflection film of photovoltaic module Download PDFInfo
- Publication number
- CN108022997A CN108022997A CN201711294644.6A CN201711294644A CN108022997A CN 108022997 A CN108022997 A CN 108022997A CN 201711294644 A CN201711294644 A CN 201711294644A CN 108022997 A CN108022997 A CN 108022997A
- Authority
- CN
- China
- Prior art keywords
- photovoltaic module
- total reflection
- reflection film
- light total
- micro
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 4
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 claims description 4
- 229920000728 polyester Polymers 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 4
- 238000012797 qualification Methods 0.000 abstract 1
- 238000003466 welding Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 230000006854 communication Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000004831 Hot glue Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- FYIBGDKNYYMMAG-UHFFFAOYSA-N ethane-1,2-diol;terephthalic acid Chemical compound OCCO.OC(=O)C1=CC=C(C(O)=O)C=C1 FYIBGDKNYYMMAG-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Elements Other Than Lenses (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of light total reflection film of photovoltaic module, applied to photovoltaic art.A kind of light total reflection film of photovoltaic module includes tack coat, basalis, structure sheaf, reflector layer, the basalis is located on tack coat, structure sheaf is located above basalis, the structure sheaf includes base and multiple micro-structures arranged in parallel above base, the bottom surface arrangement form plane of micro-structure, the reflector layer is arranged in micro-structure, and the plane of the bottom surface arrangement form of the micro-structure is directly fitted with base.The present invention crosses using tetragonous rod structure and optimizes the base angle of section isosceles trapezoid, can be easier to deposition reflector layer and maximize sun light utilization efficiency, to improve the phototranstormation efficiency of the qualification rate of product and photovoltaic module.
Description
Technical field
The present invention relates to a kind of light total reflection film of photovoltaic module, applied to photovoltaic art.
Background technology
With expanding economy, people rapidly increase the demand of the energy, and the increasingly depleted of traditional fossil energy and
A series of environmental pollutions caused by it, drive people and look for High-efficiency Sustainable and the more clean energy, and solar energy
It is exactly a kind of extraordinary selection.People are exactly photovoltaic generation to the main Land use systems of solar energy at present, and improve photovoltaic group
The generating efficiency of part, is the most important thing of current photovoltaic art.
The composition of conventional photovoltaic assemblies is followed successively by preceding glass sheet from top to bottom, encapsulates glue-line, cell piece, encapsulates glue-line and the back of the body
Plate（Or glass）.The welding that 2 ~ 3 width are 2 ~ 3mm can be wherein covered on every cell piece, can be cell piece by welding
It is together in series, welding accounts for the surface area of whole component 2 ~ 3%, and the sunlight for inciding welding region can not be by cell piece
Directly absorb.Sunlight passes through the diffusing reflection of welding surface, reflected light glass and Air Interface reflex to again on cell piece from
And be absorbed and used, and this utilization ratio is very poorly efficient.
The content of the invention
It is that one kind can be with the present invention seeks to provide a kind of light total reflection film of photovoltaic module for above-mentioned shortcoming
The light total reflection film for being used for photovoltaic module on welding is bonded to, passes through preferable quadrangular micro-structure and section isosceles trapezoid
Base angle optimizes, and can reduce metallic reflective layer deposition difficulty and maximally utilize the sunlight for impinging perpendicularly on welding region,
Improve the utilization ratio of photovoltaic module.
A kind of light total reflection film of photovoltaic module is to take following technical scheme to realize：
A kind of light total reflection film of photovoltaic module includes tack coat, basalis, structure sheaf and reflector layer.Tack coat is used for this
Light total reflection film is fixed to photovoltaic module welding strip region.Basalis is located above tack coat, is used to support structure sheaf.The knot
Structure layer is located above basalis.
The structure sheaf includes base and multiple micro-structures arranged in parallel above base, microstructured ar-rangement side
To non-perpendicular with product length direction.Micro-structure is horizontal four-prism, and four-prism section is isosceles trapezoid, adjacent positive tetragonous
The trapezoidal base hand tail of column section is connected.The isosceles trapezoid is highly 10-30 μm, and base angle is 20.9 ° ~ 30 °, can both be dropped
Low aluminium reflector layer deposits difficulty, can also meet reflected light glass and Air Interface occur total reflection and in communication process not
It can be stopped be subject to adjacent microstructures, so as to maximally utilize the sunlight for impinging perpendicularly on welding region.
The bottom surface arrangement form plane of micro-structure, the reflector layer are arranged in micro-structure, the bottom of the micro-structure
The plane of face arrangement form is directly fitted with base.
A kind of light total reflection film design of photovoltaic module is reasonable, compact-sized, is that one kind can be bonded on welding and use
In the light total reflection film of photovoltaic module, optimized by the base angle of preferable quadrangular micro-structure and section isosceles trapezoid, can be with
Reduce metallic reflective layer deposition difficulty and maximally utilize the sunlight for inciding welding region, improve component to irradiation to weldering
Region sun light utilization ratio, and then 1% ~ 2% power of component is improved, so as to improve one class of component.
Brief description of the drawings
For clearer explanation technical scheme, had in detail to preferred embodiment below in conjunction with attached drawing
The description of body, so that any technical staff in the art can be used or utilize the present invention.
Fig. 1 is a kind of light total reflection membrane structure diagram of photovoltaic module.
Fig. 2 is a kind of schematic diagram 1 of the micro-structure section isosceles trapezoid base angle selection of the light total reflection film of photovoltaic module.
Fig. 3 is a kind of schematic diagram 2 of the kidney-shaped base angles such as the micro-structure section of light total reflection film of photovoltaic module selection.
Numeral and the title of the corresponding component represented by letter in figure：
1st, tack coat；2nd, basalis；3rd, structure sheaf；31st, base；32nd, micro-structure；4th, reflector layer；5th, sunlight；6th, air；7、
Glass；8th, hot melt adhesive EVA；9th, light total reflection film；10th, welding；11st, cell piece；12nd, reflection light；13rd, it is totally reflected light.
Embodiment
Referring to the drawings 1-3, the light total reflection film of photovoltaic module a kind of includes tack coat 1, basalis 2, structure sheaf 3 and anti-
Photosphere 4.Tack coat 1 is used to the light total reflection film be fixed to photovoltaic module welding strip region.Basalis 2 is located at the top of tack coat 2,
It is used to support structure sheaf 3.Structure sheaf 3 is located above basalis.
The structure sheaf 3 includes base 31 and multiple micro-structures 32 arranged in parallel above base, micro-structure
32 orientations and light total reflection film product length direction are non-perpendicular.Micro-structure 32 is horizontal four-prism, four-prism section
For isosceles trapezoid, the adjacent trapezoidal base hand tail of four-prism section is connected.The isosceles trapezoid is highly 10-30 μm, base angle
For 20.9 ° ~ 30 °, aluminium reflector layer deposition difficulty can be both reduced, can also meet that reflected light occurs in glass and Air Interface
It is totally reflected and will not be stopped in communication process be subject to adjacent microstructures, welding region is impinged perpendicularly on so as to maximally utilize
Sunlight.
The micro-structure（32）Bottom surface arrangement form plane, the reflector layer（4）It is arranged on micro-structure（32）On,
The micro-structure（32）Bottom surface arrangement form plane and base（31）Directly fit.
The tack coat（1）To heat EVA.
The tack coat（1）Thickness be 10-50 μm.
The structure sheaf 3 is epoxy acrylate, polyester acrylate, urethane acrylate, poly terephthalic acid
Ethylene glycol fat（PET）Or polyvinyl chloride（PVC）Material.
The basalis（2）For one kind in epoxy acrylate, polyester acrylate, urethane acrylate or more
Kind.
The basalis（2）Thickness be 50-150 μm.
The reflector layer（4）Thickness is 50-150nm.
The reflector layer（4）Aluminize to be evaporated in vacuo.
The micro-structure（32）It is horizontal four-prism.
The four-prism section is isosceles trapezoid, and isosceles trapezoid base hand tail is connected, and is located on the same line.
The isosceles trapezoid is highly 10-30 μm, and base angle is 20.9 ° ~ 30 °；The bond length of the isosceles trapezoid
For 1-5um, long edge lengths are 40-80um.
Embodiment 1
A kind of light total reflection film 9 of photovoltaic module, structure as shown in Figure 1, including tack coat 1, basalis 2, structure sheaf 3
（Including base 31, micro-structure 32）With reflector layer 4.Tack coat 1 is located at bottom, and basalis 2 is located at the top of tack coat 1, structure sheaf 3
Above basalis, the top of structure sheaf 3 is equipped with reflector layer 4.Structure sheaf 3 includes base 31 and micro-structure 32.Micro-structure 32 by
Multiple parallel horizontal four-prism compositions, four-prism section is isosceles trapezoid, and the adjacent trapezoidal base of four-prism section is first
Tail is connected and is located on the same line.
The wherein thickness of tack coat 1 is 10um, and 2 thickness of basalis is 70um, the isosceles of micro-structure 32 in preferred structure layer 3
Trapezoidal bond length is 1um, so can uniformly deposit reflector layer 4（Aluminize）, light leakage phenomena is avoided, reduces micro-structure 32
Destroyed risk；The long edge lengths of isosceles trapezoid are 40um, are determining the light total reflection film width at base angle and photovoltaic module
In the case of, the number of trapezoidal height and micro-structure quadrangular thereby determines that.32 height of micro-structure is 10um at the same time, reflector layer
For metallic aluminum, thickness 40nm is high-purity by vacuum evaporation（99.9%）The mode of aluminium is made.
In order to improve the reflection efficiency of sunlight, the preferably base angle of four-prism section isosceles trapezoid is 20.9 °.Light is all-trans
Light film 9 is bonded on welding 10, when the sunlight 5 perpendicular to photovoltaic module incidence shines the light total reflection film 9 of photovoltaic module
On, as shown in Fig. 2, after the reflector layer 4 of 9 outer layer of light total reflection film is by mirror-reflection, can just be in glass 7 and 6 boundary of air
Total reflection, angle of total reflection θ are realized at faceTIRBy being calculated as 41.8 °, so as to so that this part light can full illumination to electricity
On pond piece 11, reduce loss of light propagation, the critical angle α corresponding to it is obtained by calculation as 20.9 °.
Embodiment 2
A kind of light total reflection film 9 of photovoltaic module, structure as shown in Figure 1, including tack coat 1, basalis 2, structure sheaf 3
（Including base 31, micro-structure 32）With reflector layer 4.Tack coat 1 is located at bottom, and basalis 2 is located at the top of tack coat 1, structure sheaf 3
Above basalis, reflector layer 4 is contained at top.Structure sheaf 3 includes base 31, micro-structure 32.Micro-structure 32 is by multiple parallel
Horizontal four-prism composition, four-prism section is isosceles trapezoid, the adjacent trapezoidal base of four-prism section join end to end and
It is located on the same line.
Wherein the thickness of tack coat 1 is 10um, and 2 thickness of basalis is 70um, as preference, micro-structure in structure sheaf 3
The bond length of 32 isosceles trapezoid is 1um, so can uniformly deposit reflector layer 4（Aluminize）, light leakage phenomena is avoided, is reduced
The destroyed risk of micro-structure 32；Preferably, the long edge lengths of isosceles trapezoid be 60 μm, at this time ultra-violet curing glue quantity compared with
It is few, material is saved, avoids the pollution to environment.32 height of micro-structure is 10um at the same time, and reflector layer is metallic aluminum, and thickness is
40nm, it is high-purity by vacuum evaporation（99.9%）The mode of aluminium is made.
When on the light total reflection film 9 perpendicular to the solar irradiation of photovoltaic module incidence to photovoltaic module, such as attached drawing 3, warp
After reflector layer 4 is by mirror-reflection, reflection light 12 can just be parallel with adjacent ribs cylinder, so as to avoid adjacent ribs cylinder
The effect of blocking to reflected light so that total reflection light 13 is traveled on cell piece 11 after whole reflected lights realize total reflection, so that
Sunlight is maximally utilized, the critical angle α corresponding to it is 30 °.
Embodiment 3
A kind of light total reflection film of photovoltaic module, it is contemplated that in actual production micro-structure make when error, base angle it is optimal
25 ° of selected as.Producing abrasion using protrusion for a long time in view of mould in production process causes asking for micro-structure base angle increase
Topic, in the case where base angle is still less than 30 °, the somewhat abrasion of mould can't influence the anti-of the light total reflection film of photovoltaic module
Light effect, can prolong the service life, so as to reduce production cost.
To above preferred embodiment, those skilled in the art are not on the basis of the principle of the invention is departed from, Ke Yizuo
Go out various modifications or conversion.It should be appreciated that the embodiment enumerated in specification is only preferred embodiment, and not all implementation
Example.What those skilled in the art made the embodiment of the present disclosure and Structure Figure under the premise of no creative work various repaiies
Change or convert, all belong to the protection domain of the disclosure.
Claims (10)
- A kind of 1. light total reflection film of photovoltaic module, it is characterised in that：Including tack coat, basalis, structure sheaf and reflector layer； The basalis is located on tack coat, and structure sheaf is located above basalis；The structure sheaf includes base and positioned at base Multiple micro-structures arranged in parallel of top, the bottom surface arrangement form plane of micro-structure, the reflector layer are arranged on micro-structure On, the plane of the bottom surface arrangement form of the micro-structure is directly fitted with base.
- 2. a kind of light total reflection film of photovoltaic module according to claim 1, it is characterized in that：The tack coat is heat Melten gel EVA.
- 3. a kind of light total reflection film of photovoltaic module according to claim 1, it is characterized in that：The thickness of the tack coat Spend for 10-50 μm.
- 4. a kind of light total reflection film of photovoltaic module according to claim 1, it is characterized in that：The structure sheaf is ring Oxypropylene acid esters, polyester acrylate, urethane acrylate, polyethylene terephthalate（PET）Or polyvinyl chloride （PVC）Material；The basalis is epoxy acrylate, the one or more in polyester acrylate, urethane acrylate.
- 5. a kind of light total reflection film of photovoltaic module according to claim 1, it is characterized in that：The thickness of the basalis Spend for 50-150 μm.
- 6. a kind of light total reflection film of photovoltaic module according to claim 1, it is characterized in that：The reflective layer thickness For 50-150nm.
- 7. a kind of light total reflection film of photovoltaic module according to claim 1, it is characterized in that：The reflector layer is true Empty evaporation plating aluminium.
- 8. a kind of light total reflection film of photovoltaic module according to claim 1, it is characterized in that：The micro-structure is horizontal The four-prism put.
- 9. a kind of light total reflection film of photovoltaic module according to claim 8, it is characterized in that：The four-prism breaks Face is isosceles trapezoid, and isosceles trapezoid base hand tail is connected, and is located on the same line.
- 10. a kind of light total reflection film of photovoltaic module according to claim 9, it is characterized in that：The isosceles trapezoid It highly it is 10-30 μm, base angle is 20.9 ° ~ 30 °；The bond length of the isosceles trapezoid is 1-5um, and long edge lengths are 40- 80um。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711294644.6A CN108022997A (en) | 2017-12-08 | 2017-12-08 | A kind of light total reflection film of photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711294644.6A CN108022997A (en) | 2017-12-08 | 2017-12-08 | A kind of light total reflection film of photovoltaic module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108022997A true CN108022997A (en) | 2018-05-11 |
Family
ID=62073054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711294644.6A Pending CN108022997A (en) | 2017-12-08 | 2017-12-08 | A kind of light total reflection film of photovoltaic module |
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| Country | Link |
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| CN (1) | CN108022997A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660876A (en) * | 2018-06-29 | 2020-01-07 | 中天科技精密材料有限公司 | Reflective film for photovoltaic module |
| CN116845123A (en) * | 2023-07-03 | 2023-10-03 | 无锡荷雨新能源科技有限公司 | Photovoltaic module, preparation tool and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09101405A (en) * | 1995-10-04 | 1997-04-15 | Dainippon Printing Co Ltd | Lens sheet, surface light source, and display device |
| CN103185912A (en) * | 2011-12-29 | 2013-07-03 | 奇美实业股份有限公司 | Microstructure light guide plate and side light type backlight module |
| CN103413861A (en) * | 2013-07-18 | 2013-11-27 | 常州大学 | Light reflecting thin film of photovoltaic module and method for fixing light reflecting thin film and soldering strip |
| CN105978475A (en) * | 2016-05-31 | 2016-09-28 | 浙江京华激光科技股份有限公司 | Light turning film |
| CN106449840A (en) * | 2016-12-22 | 2017-02-22 | 苏州高德辰光电科技有限公司 | Photovoltaic module reflecting film and photovoltaic module |
| CN106950626A (en) * | 2017-05-08 | 2017-07-14 | 苏州高德辰光电科技有限公司 | A kind of optical reflection film and preparation method thereof and photovoltaic cell component |
| CN207690814U (en) * | 2017-12-08 | 2018-08-03 | 中天科技精密材料有限公司 | A kind of light total reflection film of photovoltaic module |
-
2017
- 2017-12-08 CN CN201711294644.6A patent/CN108022997A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09101405A (en) * | 1995-10-04 | 1997-04-15 | Dainippon Printing Co Ltd | Lens sheet, surface light source, and display device |
| CN103185912A (en) * | 2011-12-29 | 2013-07-03 | 奇美实业股份有限公司 | Microstructure light guide plate and side light type backlight module |
| CN103413861A (en) * | 2013-07-18 | 2013-11-27 | 常州大学 | Light reflecting thin film of photovoltaic module and method for fixing light reflecting thin film and soldering strip |
| CN105978475A (en) * | 2016-05-31 | 2016-09-28 | 浙江京华激光科技股份有限公司 | Light turning film |
| CN106449840A (en) * | 2016-12-22 | 2017-02-22 | 苏州高德辰光电科技有限公司 | Photovoltaic module reflecting film and photovoltaic module |
| CN106950626A (en) * | 2017-05-08 | 2017-07-14 | 苏州高德辰光电科技有限公司 | A kind of optical reflection film and preparation method thereof and photovoltaic cell component |
| CN207690814U (en) * | 2017-12-08 | 2018-08-03 | 中天科技精密材料有限公司 | A kind of light total reflection film of photovoltaic module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660876A (en) * | 2018-06-29 | 2020-01-07 | 中天科技精密材料有限公司 | Reflective film for photovoltaic module |
| CN116845123A (en) * | 2023-07-03 | 2023-10-03 | 无锡荷雨新能源科技有限公司 | Photovoltaic module, preparation tool and preparation method thereof |
| CN116845123B (en) * | 2023-07-03 | 2024-02-02 | 无锡荷雨新能源科技有限公司 | Photovoltaic module, preparation tool and preparation method thereof |
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