CN110660876A - Reflective film for photovoltaic module - Google Patents
Reflective film for photovoltaic module Download PDFInfo
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- CN110660876A CN110660876A CN201810700976.8A CN201810700976A CN110660876A CN 110660876 A CN110660876 A CN 110660876A CN 201810700976 A CN201810700976 A CN 201810700976A CN 110660876 A CN110660876 A CN 110660876A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0549—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising spectrum splitting means, e.g. dichroic mirrors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention provides a reflective film for a photovoltaic module, which sequentially comprises a reflective layer, a microstructure layer, a substrate layer and a bonding layer from top to bottom, wherein the bonding layer is used for being bonded to a welding strip or a back plate area of the photovoltaic module. The reflective film for the photovoltaic module provided by the invention is simple in preparation process and low in cost, is adhered to a welding strip or a back plate area of the photovoltaic module, reflects sunlight incident to the reflective film to an interface of glass and air in more directions and angles, generates total reflection to reach a solar cell, increases the total light receiving amount of the cell in the photovoltaic module, and accordingly improves the power of the photovoltaic module.
Description
Technical Field
The invention relates to the field of solar cell modules, in particular to a reflective film for a photovoltaic module.
Background
In recent years, researchers develop solar cells based on a photovoltaic effect, conversion of solar energy to electric energy is achieved, people conduct detailed analysis and research on non-cell areas in photovoltaic modules, and find that incident light can be reflected again by a solder strip in the photovoltaic modules, but most of high-intensity light incident on the solder strip is positive reflection and is reflected to the outside of the photovoltaic modules, and waste of light energy is caused. In order to reduce the influence of the solder strip on the conversion efficiency of the solar cell, the light energy loss of the photovoltaic module is reduced. Researchers design a sawtooth-shaped microstructure on the surface of the solder strip, and the total quantity of light received by a cell in the photovoltaic module is increased by optimizing the surface structure of the solder strip and applying the principle of total reflection, so that the power of the photovoltaic module is improved. However, due to the high difficulty of the process, the angle of the pressed V-shaped groove hardly meets the design requirement, and the light energy cannot be recycled to improve the power of the photovoltaic module.
Disclosure of Invention
In view of the above, there is a need for a light reflecting film for a photovoltaic module, which can increase the light receiving amount of a solar cell panel and increase the power of the photovoltaic module.
The invention provides a reflective film for a photovoltaic module, which sequentially comprises a reflective layer, a microstructure layer, a substrate layer and a bonding layer from top to bottom, wherein the bonding layer is used for being bonded to a welding strip or a back plate area of the photovoltaic module.
Furthermore, the reflecting layer is a film layer made of metal by vacuum evaporation, magnetron sputtering, vacuum sputtering or electroplating, the metal is one or more mixed materials of aluminum, silver, chromium and nickel, and the thickness of the reflecting layer is 0.01-1 μm.
Further, the microstructure layer comprises a base and a micro-prism structure, wherein the thickness of the base is 1-50 μm, the ridge line of each micro-prism structure and the length direction of the reflecting film form the same included angle, and the included angle is set to be 0-60 degrees.
Furthermore, each micro prism structure is provided with the same shape and size, and the distance between the central points of the adjacent micro prism structures is set to be 10 micrometers-1 mm.
Further, the cross section of the extending direction of the micro-prism structure approximately satisfies the condition of being similar to a triangular structure or a sine curve y ═ a | sin ω x |, wherein a, ω, x are real numbers, and the micro-prism structure continuously extends on the substrate layer.
Furthermore, the base angle of the microprism structure is 10-60 degrees, the base side length is 10-1 mm, and the height is 1-100 μm.
Further, the thickness of the substrate layer is set to be 20 to 200 μm.
Further, the thickness of the adhesive layer is set to be 1 μm to 50 μm.
Further, the bonding layer material is one or more mixed materials of ethylene vinyl acetate copolymer, organic silicon resin, epoxy resin, polyvinyl butyral and ethylene octene copolymer.
Further, the substrate layer is one or more mixed materials of polyethylene, polypropylene, polyvinyl chloride, polystyrene, acrylic resin, phenolic resin, epoxy resin, polyurethane, polycarbonate, polyphenyl ether, thermoplastic resin, polyimide and polysulfone plastics.
Furthermore, the microprism structure is made of pressure-sensitive adhesive or ultraviolet curing adhesive, and the material is one or more mixed materials of rubber type, thermoplastic elastomers, polyacrylates, organic silicon and polyurethane adhesives.
The reflective film provided by the invention is simple in preparation process and low in cost, is adhered to a welding strip or a back plate area of a photovoltaic module, reflects sunlight incident to the reflective film to an interface of glass and air in more directions and angles, generates total reflection to reach a solar cell, and increases the total light receiving amount of the cell in the photovoltaic module, thereby improving the power of the photovoltaic module.
Drawings
Fig. 1a is a schematic structural diagram of a light-reflecting film according to a first embodiment of the present invention.
Fig. 1b is a schematic structural diagram of a reflective film according to a second embodiment of the present invention.
Fig. 2 is a top view of the retroreflective sheeting of fig. 1 a.
Fig. 3 is a top view of the retroreflective sheeting of fig. 1 b.
Fig. 4 is a schematic cross-sectional view of the light-reflecting film shown in fig. 1 a.
Fig. 5 is a schematic cross-sectional view of the reflective film shown in fig. 1 b.
Description of the main elements
|
100 |
Light reflecting |
10 |
|
20 |
|
21 |
|
22 |
|
30 |
|
40 |
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood that when an element is referred to as being "mounted on" another element, it can be directly on the other element or intervening elements may also be present. When a component is referred to as being "disposed on" another component, it can be directly on the other component or intervening components may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "or/and" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1a, fig. 1a is a schematic structural diagram of the reflective film 100 according to the first embodiment of the present invention, the reflective film 100 is disposed on a solder strip or a back plate of a photovoltaic module, and is used for reflecting sunlight onto a solar cell, increasing the total amount of light received by the cell in the photovoltaic module, and increasing the power of the photovoltaic module. The reflective film 100 sequentially comprises a reflective layer 10, a microstructure layer 20, a substrate layer 30 and an adhesive layer 40 from top to bottom.
Referring to fig. 1b, fig. 1b is a schematic structural view of the reflective film 100 according to a second embodiment of the present invention, and fig. 1a is the same as the reflective film 100 shown in fig. 1b, but there is a difference in the arrangement of the microstructure layer 20 on the substrate layer 30.
The light reflecting layer 10 is a film layer disposed on the microstructure layer 20. Specifically, the reflective layer 10 is a film layer made of metal by a method such as vacuum evaporation, magnetron sputtering, vacuum sputtering, or electroplating, in this embodiment, the metal is one or more of aluminum, silver, chromium, and nickel, and the thickness of the reflective layer 10 is 0.01 μm to 1 μm.
The microstructure layer 20 comprises a base 21 and a plurality of microprism structures 22, wherein the base 21 is disposed on the substrate layer 30, and the thickness of the base 21 is set to be 1-50 μm.
In the present embodiment, the cross section of the extending direction of the micro-prism structure 22 is set to satisfy a sine curve y ═ a | sin ω x |, (a, ω, x are real numbers) or a triangle-like structure. In some embodiments, the cross-section of the extending direction of the microprism structure 22 is configured as a triangular structure, the base angle of the triangular structure is set to 10 to 60 degrees, the base side length is set to 10 μm to 1mm, the height is set to 1 μm to 100 μm, and the triangular structure is configured as an isosceles triangle. In other embodiments, the cross section of the extending direction of the micro prism structure 22 may be configured as a trapezoid or a combined shape.
The plurality of micro-prism structures 22 are sequentially arranged in parallel and continuously extend on the substrate layer 20, each micro-prism structure 22 is set to have the same shape and size, the micro-prism structures 22 are sequentially and closely connected, the distance between the central points of each adjacent micro-prism structure 22 is set to be 10 μm-1 mm, an included angle θ (shown in fig. 2) is set between the axis of the extending direction of the micro-prism structure 22 and the length direction of the reflective film 100, the included angle θ is set to be 0-60 °, specifically shown in fig. 2 and 3, and fig. 2 and 3 are top views of the reflective film 100 respectively when the included angle θ is set to be 0 ° and 45 °. As shown in fig. 4 and 5, fig. 4 and 5 are schematic cross-sectional structural diagrams of the light reflecting film 100 in the case that the included angle θ is 0 ° and 45 °, respectively.
The microprism structure 22 is made of pressure-sensitive adhesive or ultraviolet curing adhesive, and mainly comprises one or more mixed materials of rubber type, thermoplastic elastomers, polyacrylates, organic silicon and polyurethane adhesives.
The base layer 30 is disposed on the adhesive layer 40, the thickness of the base layer 30 is set to be 20-200 μm, and the material used for the base layer 30 is one or more of a mixture of polyethylene, polypropylene, polyvinyl chloride, polystyrene, acrylic resin, phenolic resin, epoxy resin, polyurethane, polycarbonate, polyphenylene oxide, thermoplastic resin, polyimide, polysulfone plastic, and other high polymer materials.
The adhesive layer 40 is an adhesive and is used for fixing the reflective film 100 on a welding strip or a back plate of a solar cell panel, the thickness of the adhesive layer 40 is set to be 1-50 μm, and the material used for the adhesive layer 40 is one or more of ethylene vinyl acetate copolymer (EVA), organic silicon resin, epoxy resin, polyvinyl butyral (PVB) and ethylene octene copolymer (POE).
The invention will now be further illustrated by means of specific examples.
Example 1
The thickness of the base 21 is 5 μm, the thickness of the substrate layer 30 is 80 μm, the micro-prism structure 22 is composed of a plurality of closely connected and orderly arranged triangular prism-like structures, an included angle between an axis of the micro-prism structure 22 in the extending direction and the length direction of the reflective film 100 is 0 degree (as shown in fig. 1 a), the cross section of the micro-prism structure 22 in the extending direction is an approximately triangular structure, two base angles of the triangular structure are 21 degrees, and the length of the base side is 50 μm.
The material of the reflecting layer 10 is preferably a metal aluminum layer, the material is prepared by vacuum evaporation of a high-purity (99.9%) aluminum simple substance, the thickness of the reflecting layer 10 is 100nm, and the thickness of the bonding layer 40 is 30 um.
Example two
The thickness of the base 21 is 5 μm, the thickness of the substrate layer 30 is 80 μm, the micro-prism structure 22 is composed of a plurality of closely connected and orderly arranged triangular prism-like structures, an included angle between an axis of the extending direction of the micro-prism structure 22 and the length direction of the reflective film 100 is 45 degrees (as shown in fig. 1 b), the cross section of the extending direction of the micro-prism structure 22 is an approximately triangular structure, two base angles of the triangular structure are 21 degrees, and the length of the base side is 50 μm.
The material of the reflecting layer 10 is preferably a metal aluminum layer, the material is prepared by vacuum evaporation of a high-purity (99.9%) aluminum simple substance, the thickness of the reflecting layer 10 is 100nm, and the thickness of the bonding layer 40 is 30 um.
Example III
The thickness of the base 21 is 5 μm, the thickness of the substrate layer 30 is 80 μm, the micro-prism structure 22 is composed of a plurality of closely connected and orderly arranged triangular prism-like structures, an included angle between an axis of the extending direction of the micro-prism structure 22 and the length direction of the reflective film 100 is 0 degree (as shown in fig. 1 a), and the cross-sectional structure of the extending direction of the micro-prism structure 22 meets the sine curve functionx ∈ R where R is a real number), where the height of the curve is 14 μm and the length of one period is 16 ≈ 3.14.
The material of the reflecting layer 10 is preferably a metal aluminum layer, the material is prepared by vacuum evaporation of a high-purity (99.9%) aluminum simple substance, the thickness of the reflecting layer 10 is 100nm, and the thickness of the bonding layer 40 is 30 um.
Example four
The thickness of the base 21 is 5 μm, the thickness of the substrate layer 30 is 80 μm, the micro-prism structure 22 is composed of a plurality of closely connected and orderly arranged triangular prism-like structures, an included angle between an axis of the extending direction of the micro-prism structure 22 and the length direction of the reflective film 100 is 45 degrees (as shown in fig. 1 a), and the cross-sectional structure of the extending direction of the micro-prism structure 22 meets the sine curve functionx ∈ R where R is a real number), where the height of the curve is 14 μm and the length of one period is 16 ≈ 3.14.
The material of the reflecting layer 10 is preferably a metal aluminum layer, the material is prepared by vacuum evaporation of a high-purity (99.9%) aluminum simple substance, the thickness of the reflecting layer 10 is 100nm, and the thickness of the bonding layer 40 is 30 um.
The reflective film provided by the invention is simple in preparation process and low in cost, is adhered to a welding strip or a back plate area of a photovoltaic module, reflects sunlight incident to the reflective film to an interface of glass and air in more directions and angles, generates total reflection to reach a solar cell, and increases the total light receiving amount of the cell in the photovoltaic module, thereby improving the power of the photovoltaic module.
It should be understood by those skilled in the art that the above embodiments are only for illustrating the present invention and are not to be used as a limitation of the present invention, and that suitable changes and modifications of the above embodiments are within the scope of the claimed invention as long as they are within the spirit and scope of the present invention.
Claims (11)
1. The utility model provides a reflective membrane for photovoltaic module which characterized in that: the reflective membrane comprises a reflective layer, a microstructure layer, a basal layer and a bonding layer from top to bottom in sequence, wherein the bonding layer is used for being pasted to a welding strip or a backboard area of the photovoltaic module.
2. The light-reflecting film for photovoltaic modules according to claim 1, wherein: the reflective layer is a film layer made of metal by vacuum evaporation, magnetron sputtering, vacuum sputtering or electroplating, the metal is one or more mixed materials of aluminum, silver, chromium and nickel, and the thickness of the reflective layer is 0.01-1 μm.
3. The light-reflecting film for photovoltaic modules according to claim 1, wherein: the microstructure layer comprises a base and a micro-prism structure, wherein the thickness of the base is 1-50 μm, the ridge line of each micro-prism structure and the length direction of the reflecting film form the same included angle, and the included angle is set to be 0-60 degrees.
4. The light-reflecting film for photovoltaic modules according to claim 1, wherein: each micro prism structure is provided with the same shape and size, and the distance between the central points of the adjacent micro prism structures is set to be 10 micrometers-1 mm.
5. The light-reflecting film for photovoltaic modules according to claim 1, wherein: the cross section of the extending direction of the micro-prism structure is similar to a triangular structure or approximately meets the sine curve y ═ A | sin ω x |, wherein A, ω and x are real numbers, and the micro-prism structure continuously extends on the substrate layer.
6. The light-reflecting film for photovoltaic modules according to claim 5, wherein: the base angle of the microprism structure is 10-60 degrees, the base side length is 10-1 mm, and the height is 1-100 μm.
7. The light-reflecting film for photovoltaic modules according to claim 1, wherein: the thickness of the substrate layer is set to be 20-200 μm.
8. The light-reflecting film for photovoltaic modules according to claim 1, wherein: the thickness of the bonding layer is set to be 1-50 μm.
9. The light-reflecting film for photovoltaic modules according to claim 1, wherein: the bonding layer material is one or more mixed materials of ethylene-vinyl acetate copolymer, organic silicon resin, epoxy resin, polyvinyl butyral and ethylene octene copolymer.
10. The light-reflecting film for photovoltaic modules according to claim 1, wherein: the base layer is made of one or more mixed materials of polyethylene, polypropylene, polyvinyl chloride, polystyrene, acrylic resin, phenolic resin, epoxy resin, polyurethane, polycarbonate, polyphenyl ether, thermoplastic resin, polyimide and polysulfone plastics.
11. The light-reflecting film for photovoltaic modules according to claim 1, wherein: the microprism structure is made of pressure-sensitive adhesive or ultraviolet curing adhesive, and is made of one or more mixed materials of rubber type, thermoplastic elastomers, polyacrylates, organic silicon type and polyurethane type adhesives.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111391263A (en) * | 2020-02-21 | 2020-07-10 | 南京工业大学 | Non-pigment porous total reflection heat insulation cooling polymer film and preparation method thereof |
CN111477706A (en) * | 2020-04-27 | 2020-07-31 | 江苏东鋆光伏科技有限公司 | Photovoltaic module with reflective film and preparation process thereof |
CN116682869A (en) * | 2023-05-29 | 2023-09-01 | 浙江夜光明光电科技股份有限公司 | High-energy-efficiency reflective film for double-glass solar backboard and preparation method thereof |
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