CN105978475A - Light turning film - Google Patents
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- CN105978475A CN105978475A CN201610375664.5A CN201610375664A CN105978475A CN 105978475 A CN105978475 A CN 105978475A CN 201610375664 A CN201610375664 A CN 201610375664A CN 105978475 A CN105978475 A CN 105978475A
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- light turning
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- 239000000758 substrate Substances 0.000 claims description 25
- 239000004411 aluminium Substances 0.000 claims description 4
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- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000011127 biaxially oriented polypropylene Substances 0.000 claims description 3
- 229920006378 biaxially oriented polypropylene Polymers 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 2
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
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- 229920005989 resin Polymers 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000005538 encapsulation Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
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- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Photovoltaic Devices (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
The invention discloses a light turning film comprising a base material layer, a microstructure layer disposed on the base material layer, and a reflection layer disposed on the microstructure layer in a covered manner. The reflection layer is disposed on a non-cell area of a photovoltaic assembly. The microstructure layer comprises a plurality of microstructure strips, which are arranged horizontally and vertically, and microstructure areas disposed on four corners of a cell. The microstructure strips and the microstructure areas are respectively in the shape of a sawtooth, and comprise a plurality of microstructures, which are provided with cross sections having at least two side surfaces. The reflection layer is disposed on the side surfaces of the microstructures in a covered manner. Included angles between the length extension directions of the microstructures and the microstructure strips are in a range from 0 to 90 degrees. By arranging the light turning film provided by the invention on the photovoltaic assembly, the light utilization problem of the non-cell area of the photovoltaic assembly is effectively solved, and the light conversion efficiency of the photovoltaic assembly is greatly improved.
Description
Technical field
The present invention relates to a kind of light turning film, belong to field of photovoltaic technology.
Background technology
Solar energy is the regenerative resource of a kind of environmental protection.Along with the increase of population in the world and to current main flow can not
The dependence of the Fossil fuel of regeneration consumes with a large amount of, not only brings the worry of energy depletion to the whole world, also brings environmental pollution
Worry, the novel renewable energy of the environmental protection of urgent needs exploitation simultaneously.Nowadays, based on photogenic voltage principle, the sun is utilized
The light generation monocrystal silicon of power, polysilicon photovoltaic cells assembly are the most highly developed.The most conventional photovoltaic module, depends on from lower to upper
Secondary by backboard, encapsulation glue-line, cell piece array, encapsulation glue-line and header board etc. form.General on photovoltaic module longitudinal direction, electricity
Current lead-through is realized to reach the purpose of component power output by tin-coated copper strip welding series connection between the cell piece of pond chip arrays.
Conventional batteries sheet surface is covered with 2 ~ 4 weldings wide for about 2mm, accounts for the 3-4% of cell area, additionally, cell piece
Between there is also certain interval (being generally laterally spaced about 2-3mm, longitudinal pitch about 3-5mm), and the 4 of Monocrystalline silicon cell piece
There is hypotenuse in individual angle, can form an approximation octagon white space in the middle of 4 cell pieces, and above-mentioned gap and white space are about
Account for about the 3-5% of whole assembly array.Although there being a lot of photovoltaic module producer can pass through to paste reflecting strips on welding with more at present
Mend this this hatched area；But the most effectively utilize cell piece gap and white space sunlight the most all exploring
In.
In view of this, this is studied by the present inventor, develops a kind of light turning film specially, and this case thus produces.
Summary of the invention
It is an object of the invention to provide a kind of light turning film, the light efficiently solving photovoltaic module non-battery panel region utilizes
Problem.
To achieve these goals, the solution of the present invention is:
A kind of light turning film, including substrate layer, the microstructured layers being arranged on substrate layer, and cover on microstructured layers anti-
Photosphere, described reflector layer is distributed in the non-battery panel region of photovoltaic module.
As preferably, described microstructured layers includes the micro structure bar of some horizontal and vertical settings, described micro structure bar
For zigzag, including several micro structures, described micro structure has the cross section including at least 2 sides, and described reflector layer covers
Cover on the side of micro structure；Described micro structure is 0 ~ 90 ° with the angle of the length bearing of trend of micro structure bar.
As preferably, described micro structure cross section is triangle, and the angle of two sides and bottom surface is 30 ~ 75 °.
As preferably, described microstructured layers farther includes several microstructured area being positioned at 4 angles of cell piece, described micro-
Structural area is zigzag, and including several micro structures, described micro structure has a cross section including at least 2 sides, described instead
Photosphere covers on the side of micro structure；The micro structure side of described microstructured area is towards corresponding cell piece, with corresponding
Cell piece diagonal is parallel.
As preferably, the micro structure cross section of described microstructured area is right angled triangle, including inclined-plane, vertical and the end
Face, wherein, described inclined-plane is 30 ~ 75 ° towards the cell piece corresponding to this microstructured area, described inclined-plane with the angle of bottom surface.Logical
Cross inclined-plane and the most turn light rays can be reflected to the cell piece of correspondence, increase the light conversion efficiency of cell piece.
As preferably, the described substrate layer region corresponding with cell piece is engraved structure, is designed by hollow out, can subtract
Few difference in height between reflector layer and cell piece, and then make reflector layer top and cell piece upper surface flush, preferably carry out light
Reflection.
As preferably, each micro structure in described micro structure bar is parallel to each other, and the side of adjacent 2 micro structures is connected
Connect；Each micro structure in described microstructured area is parallel to each other, and the side of adjacent 2 micro structures is connected.
As preferably, described substrate layer thickness is 50 μm ~ 250mm, and described micro structure highlights 10 μm ~ 30 μm from substrate layer,
Reflector layer thickness is 380-600.
As preferably, described substrate layer material is PET(polyethylene terephthalate), BOPP(biaxial stretching polypropylene
Alkene), PVC(polrvinyl chloride), BOPET (polyester), CPE(be cast polyethylene) or ABS(butadiene acrylonitrile styrene group
The terpolymer become)；Described microstructured layers uses UV-cured resin, specially epoxy acrylate, polyurethane propylene
Acid esters or polyester acrylate；Described reflector layer is the coat of metal, specially aluminium coated.
Smooth turning film of the present invention is applied in photovoltaic module, is specifically located between backboard and cell piece array,
Reflector layer is embedded in the non-battery sheet white space of photovoltaic module, is used for the refraction of light, the reflection increasing in photovoltaic module, and then
Improve the light conversionization efficiency of photovoltaic module.Smooth turning film of the present invention mainly has following several advantage:
1) light turning film is arranged on bottom cell piece array, and reflector layer is filled and covered all gap locations at photovoltaic module, maximum
Change and improve phototranstormation efficiency；
2) micro structure of difformity, angle, orientation is set at light turning film correspondence different gap, any gap location can be made
Luminous energy maximize reflex on cell piece；
3) light turning film is installed and is implemented conveniently, only when photovoltaic component encapsulating, whole light turning film to be placed on cell piece battle array
Below row, good by encapsulation glue-line fixing seal, it is not necessary to additionally to paste, the operation such as location, and the hollow out nesting of substrate layer sets
Meter, it is also possible to avoid layer " to drift about " problem.
Below in conjunction with drawings and the specific embodiments, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is photovoltaic module decomposition texture schematic diagram (polysilicon) with light turning film of embodiment 1；
Fig. 2 is the photovoltaic module partial sectional view with light turning film of embodiment 1；
Fig. 3 is the light turning film axonometric chart of embodiment 1；
Fig. 4 is enlarged diagram at the A of Fig. 3；
Fig. 5 is the micro structure cross-sectional view in the embodiment 1 micro structure bar between each cell piece；
Fig. 6 is the micro structure cross-sectional view of the embodiment 1 micro structure bar between cell piece and photovoltaic component frame；
Fig. 7 is photovoltaic module decomposition texture schematic diagram (monocrystal silicon) with light turning film of embodiment 3；
Fig. 8 is the light turning film plane graph of embodiment 3；
Fig. 9 is the light turning film axonometric chart of embodiment 3；
Figure 10 is enlarged diagram at the B of Fig. 9；
Figure 11 is that the A-A of Figure 10 is to sectional view；
Figure 12 is embodiment 4 smooth turning film plane graph；
Figure 13 is enlarged diagram at the C of Figure 12.
Detailed description of the invention
Embodiment 1
Light turning film described in the present embodiment is applied in polysilicon photovoltaic module, and polycrystalline silicon battery plate is the tetragon of rule
(square).As shown in Figure 1-2, the photovoltaic module of a kind of light turning film having described in the present embodiment, including the back of the body being sequentially overlapped
Plate 1, first encapsulates glue-line 2, light turning film 3, cell piece array the 5, second encapsulation glue-line 4 and header board 6.Wherein, described light turns to
Film 3 includes substrate layer 31, the microstructured layers 32 being arranged on substrate layer 31, and covers the reflector layer on microstructured layers 32
33, described reflector layer 33 is distributed in each cell piece 51 gap of cell piece array, and cell piece 51 and photovoltaic component frame it
Between gap in.Light turning film 3 described in the present embodiment is arranged on bottom cell piece array 5, and reflector layer 33 is filled and covered at light
All gap locations of photovoltaic assembly, maximize and improve phototranstormation efficiency.
For ensureing the reflector efficiency of reflector layer 33, described reflector layer 33 top is general and the upper surface flush of cell piece 51.
Therefore, described substrate layer 31 region corresponding with cell piece 51 is engraved structure, is designed by hollow out, it is possible to reduce reflector layer
Difference in height between 33 and cell piece 51.
As seen in figures 3-6, described microstructured layers 32 includes the micro structure bar 321 of some horizontal and vertical settings, described
Micro structure bar 321 is zigzag, the micro structure 323 mutually linked up including several, and described micro structure 323 has and includes 2 sides
The cross section in face, described reflector layer 33 covers on the side of micro structure 323.Wherein, the micro-knot between each cell piece 51
Micro structure 323 cross section in structure bar 321 is generally on-right angle triangle, and the angle α of two sides and bottom surface is 30 ~ 75 °.At this
In embodiment, micro structure 323 cross section in the micro structure bar 321 between each cell piece 51 is equilateral triangle, α=
60°.Micro structure 323 cross section in micro structure bar 321 between cell piece 51 and photovoltaic component frame is right angle trigonometry,
Inclined-plane is towards angle β=30 ~ 75 ° (the present embodiment β=60 °) of cell piece 51, inclined-plane and bottom surface.Can be by the most by inclined-plane
Light be reflected to correspondence cell piece 51, increase cell piece 51 light conversion efficiency.
In the present embodiment, its length bearing of trend of micro structure 323 in all micro structure bars 321 and micro structure bar 321
The angle of length bearing of trend=0 °, i.e. its length bearing of trend of micro structure 323 in micro structure bar 321 and micro structure bar
The length bearing of trend of 321 is parallel to each other.
The corresponding different cell piece gap locations of described smooth turning film 3 arrange the micro structure of difformity, angle, orientation
323, the luminous energy of any gap location can be made to maximize and to reflex on cell piece 51.
In the present embodiment, described polycrystalline silicon battery plate 51 thickness is about 200 μm, and substrate layer 31 thickness is 180 μm,
Described micro structure 32 highlights 20 μm from substrate layer 31, and reflector layer 33 thickness is 400.
Described substrate layer 31 uses PET film, described microstructured layers 32 to use epoxy acrylate；Described reflector layer 33 is plating
Aluminium lamination.
Install at the light turning film 3 described in this enforcement and implement conveniently, only to be turned to by whole Zhang Guang when photovoltaic component encapsulating
Film 3 is placed on below cell piece array 5, good by encapsulation glue-line fixing seal, it is not necessary to additionally paste, the operation such as location, and
The hollow out nested designs of substrate layer 31, it is also possible to avoid layer " to drift about " problem.In the concrete encapsulation process of photovoltaic module, work as concatenation
When the welding of adjacent 2 cell pieces 51 is inconsistent with the part micro structure bar 321 of light turning film 3, part light can be cropped and turn
To film, so that light turning film 3 is entirely embedded in the non-battery panel region of photovoltaic module.
Embodiment 2
Light turning film 3 described in the present embodiment described in the present embodiment differs primarily in that with embodiment 1: in the present embodiment,
Micro structure 323 cross section in micro structure bar 321 between each cell piece 51 is isosceles triangle, α=45 °.It is positioned at battery
Micro structure 323 cross section in micro structure bar 321 between sheet 51 and photovoltaic component frame is right angle trigonometry, and inclined-plane is towards battery
Angle β=30 ~ 75 ° (the present embodiment β=45 °) of sheet 51, inclined-plane and bottom surface.The most light can be reflected to by inclined-plane
Corresponding cell piece 51, increases the light conversion efficiency of cell piece 51.
Its length bearing of trend of the micro structure 323 in micro structure bar 321 between cell piece 51 and micro structure bar 321
The angle of length bearing of trend=60 °, be so designed with beneficially light turning film micro structure stability (be hardly damaged, residual
Lack), be conducive to improving light conversion efficiency.The micro-knot in micro structure bar 321 between cell piece 51 and photovoltaic component frame
The angle of the length bearing of trend of its length bearing of trend of structure 323 and micro structure bar 321=0°。
Embodiment 3
Light turning film described in the present embodiment is applied in monocrystal silicon photovoltaic module, and Monocrystalline silicon cell piece is irregular tetragon
(4 angles are arc).As it is shown in fig. 7, a kind of photovoltaic module with light turning film, including backboard the 1, first envelope being sequentially overlapped
Dress glue-line 2, light turning film 3, cell piece array 5, second encapsulate glue-line 4 and header board 6.Wherein, described smooth turning film 3 includes base
Sheet material layers 31, the microstructured layers 32 being arranged on substrate layer 31, and cover the reflector layer 33 on microstructured layers 32, described reflective
Layer 33 is distributed in each cell piece 51 gap of cell piece array, and in the gap between cell piece 51 and photovoltaic component frame.
For ensureing the reflector efficiency of reflector layer 33, described reflector layer 33 top is general and the upper surface flush of cell piece 51.
Therefore, described substrate layer 31 region corresponding with cell piece 51 is engraved structure, is designed by hollow out, it is possible to reduce reflector layer
Difference in height between 33 and cell piece 51.
In the present embodiment, as illustrated in figs. 8-11, described microstructured layers 32 includes the micro-of some horizontal and vertical settings
Structure bar 321, and it is positioned at the microstructured area 322 at 4 angles of cell piece, described micro structure bar 321 and microstructured area 322 are saw
Dentation, including several micro structures 323, described micro structure 323 has the cross section including 2 sides, and described reflector layer 33 covers
Cover on the side of micro structure 323.Wherein, micro structure 323 cross section in the micro structure bar 321 between each cell piece 51
Generally on-right angle triangle, the angle α of two sides and bottom surface is 30 ~ 75 °.In the present embodiment, be positioned at each cell piece 51 it
Between micro structure bar 321 in micro structure 323 cross section be isosceles triangle, α=50 °.It is positioned at cell piece 51 and photovoltaic module limit
Micro structure 323 cross section in micro structure bar 321 between frame is right angle trigonometry, and inclined-plane is towards cell piece 51, inclined-plane and bottom surface
Angle β=30 ~ 75 ° (the present embodiment β=50 °).The most light can be reflected to the cell piece 51 of correspondence by inclined-plane,
Increase the light conversion efficiency of cell piece 51.
In the present embodiment, its length bearing of trend of micro structure 323 in all micro structure bars 321 and micro structure bar 321
The angle of length bearing of trend=0 °, i.e. its length bearing of trend of micro structure 323 in micro structure bar 321 and micro structure bar
The length bearing of trend of 321 is parallel to each other.
Micro structure 323 cross section in described microstructured area 322 is generally the angle of right angle trigonometry, inclined-plane and bottom surface=
30~75°.In the present embodiment, micro structure 323 cross section in microstructured area 322 is right angled triangle,=50°.Micro structure
The inclined-plane of the micro structure 323 in district 322, by inclined-plane can be the most towards the cell piece 51 corresponding to this microstructured area
Light is transmitted to the cell piece 51 of correspondence, increases the light conversion efficiency of cell piece 51.Micro structure 323 in microstructured area 322 its
Length bearing of trend is paralleled with corresponding cell piece 51 diagonal.
In the present embodiment, described polycrystalline silicon battery plate 51 thickness is about 180 μm, and substrate layer 31 thickness is 150 μm,
Described micro structure 323 highlights 25 μm from substrate layer 31, and reflector layer 33 thickness is 600.Described substrate layer 31 is BOPP film；Described
Microstructured layers 32 uses urethane acrylate；Described reflector layer 33 is aluminium coated.
Embodiment 4
Light turning film structure described in the present embodiment is basically identical with embodiment 3, differs primarily in that in the present embodiment, is positioned at
Micro structure 323 cross section in micro structure bar 321 between each cell piece 51 is isosceles triangle, α=70 °.It is positioned at cell piece 51
And micro structure 323 cross section in the micro structure bar 321 between photovoltaic component frame is right angle trigonometry, and inclined-plane is towards cell piece
51, inclined-plane and angle β=30 ~ 75 ° (the present embodiment β=70 °) of bottom surface.It is right to be reflected to by the most light by inclined-plane
The cell piece 51 answered, increases the light conversion efficiency of cell piece 51.
As shown in figure 12, its length bearing of trend of micro structure 323 in the micro structure bar 321 between cell piece 51 with
The angle of the length bearing of trend of micro structure bar 321=30 °, so it is designed with the stability of beneficially light turning film micro structure (no
Fragile, incomplete), be conducive to improving light conversion efficiency.Micro structure bar 321 between cell piece 51 and photovoltaic component frame
In the angle of length bearing of trend of its length bearing of trend of micro structure 323 and micro structure bar 321=0°。
Micro structure 323 cross section in described microstructured area 322 is generally the angle of right angle trigonometry, inclined-plane and bottom surface=
30~75°.In the present embodiment, micro structure 323 cross section in microstructured area 322 is right angled triangle,=70°.Micro structure
The inclined-plane of the micro structure 323 in district 322, by inclined-plane can be the most towards the cell piece 51 corresponding to this microstructured area
Light is transmitted to the cell piece 51 of correspondence, increases the light conversion efficiency of cell piece 51.Micro structure 323 in microstructured area 322 its
Length bearing of trend is paralleled with corresponding cell piece 51 diagonal.
Above-described embodiment and the product form of the graphic and non-limiting present invention and style, any art common
Technical staff is suitably changed what it did or modifies, and all should be regarded as the patent category without departing from the present invention.
Claims (10)
1. a light turning film, it is characterised in that: include substrate layer, the microstructured layers being arranged on substrate layer, and cover
Reflector layer on microstructured layers, described reflector layer is distributed in the non-battery panel region of photovoltaic module.
2. a kind of light turning film as claimed in claim 1, it is characterised in that: described microstructured layers includes that some laterally and are indulged
To the micro structure bar arranged, described micro structure bar is zigzag, and including several micro structures, described micro structure has and includes at least
The cross section of 2 sides, described reflector layer covers on the side of micro structure, and described micro structure extends with the length of micro structure bar
The angle in direction is 0 ~ 90 °.
3. a kind of light turning film as claimed in claim 2, it is characterised in that: described micro structure cross section is triangle, two
Side is 30 ~ 75 ° with the angle of bottom surface.
4. a kind of light turning film as claimed in claim 1, it is characterised in that: described microstructured layers farther includes several positions
In the microstructured area at 4 angles of cell piece, described microstructured area is zigzag, and including several micro structures, described micro structure has
Including the cross section of at least 2 sides, described reflector layer covers on the side of micro structure；The micro structure side of described microstructured area
, towards corresponding cell piece, parallel with corresponding cell piece diagonal in face.
5. a kind of light turning film as claimed in claim 4, it is characterised in that: the micro structure cross section of described microstructured area is straight
Angle triangle, including inclined-plane, vertical and bottom surface, wherein, described inclined-plane is towards the cell piece corresponding to this microstructured area, described
Inclined-plane is 30 ~ 75 ° with the angle of bottom surface.
6. a kind of light turning film as claimed in claim 1, it is characterised in that: the region that described substrate layer is corresponding with cell piece
For engraved structure.
7. a kind of light turning film as claimed in claim 2, it is characterised in that: each micro structure in described micro structure bar is mutual
Parallel, the side of adjacent 2 micro structures is connected；Each micro structure in described microstructured area is parallel to each other, adjacent 2 micro-knots
The side of structure is connected.
8. a kind of light turning film as claimed in claim 1, it is characterised in that: described substrate layer thickness is 50 μm ~ 250mm, institute
Stating micro structure and highlight 10 μm ~ 30 μm from substrate layer, reflector layer thickness is 380-600.
9. light turning film as claimed in claim 1 a kind of, it is characterised in that: described substrate layer material is PET, BOPP, PVC,
BOPET, CPE or ABS；Described microstructured layers uses UV-cured resin, and described reflector layer is the coat of metal.
10. a kind of light turning film as claimed in claim 9, it is characterised in that: described microstructured layers employing epoxy acrylate,
Urethane acrylate or polyester acrylate；Described reflector layer is aluminium coated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610375664.5A CN105978475A (en) | 2016-05-31 | 2016-05-31 | Light turning film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610375664.5A CN105978475A (en) | 2016-05-31 | 2016-05-31 | Light turning film |
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| Publication Number | Publication Date |
|---|---|
| CN105978475A true CN105978475A (en) | 2016-09-28 |
Family
ID=57010594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610375664.5A Pending CN105978475A (en) | 2016-05-31 | 2016-05-31 | Light turning film |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449830A (en) * | 2016-12-22 | 2017-02-22 | 苏州高德辰光电科技有限公司 | Reflecting back plate for photovoltaic assembly |
| CN106449829A (en) * | 2016-12-22 | 2017-02-22 | 苏州高德辰光电科技有限公司 | Reflection back plate for photovoltaic module |
| CN106449842A (en) * | 2016-12-22 | 2017-02-22 | 苏州高德辰光电科技有限公司 | Photovoltaic component solder strip retro reflective film |
| CN106531830A (en) * | 2016-12-22 | 2017-03-22 | 苏州高德辰光电科技有限公司 | Reflective back plate used for photovoltaic module |
| CN108022997A (en) * | 2017-12-08 | 2018-05-11 | 中天科技精密材料有限公司 | A kind of light total reflection film of photovoltaic module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007073203A1 (en) * | 2005-12-19 | 2007-06-28 | Renewable Energy Corporation Asa | Solar cell module |
| CN102232246A (en) * | 2008-10-03 | 2011-11-02 | 凸版印刷株式会社 | Solar battery module |
| CN103413861A (en) * | 2013-07-18 | 2013-11-27 | 常州大学 | Light reflecting thin film of photovoltaic module and method for fixing light reflecting thin film and soldering strip |
| CN103681924A (en) * | 2013-12-26 | 2014-03-26 | 无锡市斯威克科技有限公司 | Refraction type reflective welding belt |
-
2016
- 2016-05-31 CN CN201610375664.5A patent/CN105978475A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007073203A1 (en) * | 2005-12-19 | 2007-06-28 | Renewable Energy Corporation Asa | Solar cell module |
| CN102232246A (en) * | 2008-10-03 | 2011-11-02 | 凸版印刷株式会社 | Solar battery module |
| CN103413861A (en) * | 2013-07-18 | 2013-11-27 | 常州大学 | Light reflecting thin film of photovoltaic module and method for fixing light reflecting thin film and soldering strip |
| CN103681924A (en) * | 2013-12-26 | 2014-03-26 | 无锡市斯威克科技有限公司 | Refraction type reflective welding belt |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449830A (en) * | 2016-12-22 | 2017-02-22 | 苏州高德辰光电科技有限公司 | Reflecting back plate for photovoltaic assembly |
| CN106449829A (en) * | 2016-12-22 | 2017-02-22 | 苏州高德辰光电科技有限公司 | Reflection back plate for photovoltaic module |
| CN106449842A (en) * | 2016-12-22 | 2017-02-22 | 苏州高德辰光电科技有限公司 | Photovoltaic component solder strip retro reflective film |
| CN106531830A (en) * | 2016-12-22 | 2017-03-22 | 苏州高德辰光电科技有限公司 | Reflective back plate used for photovoltaic module |
| CN106449829B (en) * | 2016-12-22 | 2018-04-27 | 苏州高德辰光电科技有限公司 | A kind of reflective back plane for photovoltaic module |
| CN106449830B (en) * | 2016-12-22 | 2018-07-17 | 苏州高德辰光电科技有限公司 | A kind of reflective back plane for photovoltaic module |
| CN108022997A (en) * | 2017-12-08 | 2018-05-11 | 中天科技精密材料有限公司 | A kind of light total reflection film of photovoltaic module |
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