CN108022890A - High frequency silicon base chip package module and method for packing - Google Patents
High frequency silicon base chip package module and method for packing Download PDFInfo
- Publication number
- CN108022890A CN108022890A CN201711297763.7A CN201711297763A CN108022890A CN 108022890 A CN108022890 A CN 108022890A CN 201711297763 A CN201711297763 A CN 201711297763A CN 108022890 A CN108022890 A CN 108022890A
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- base chip
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000012856 packing Methods 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000007769 metal material Substances 0.000 claims abstract description 5
- 230000007704 transition Effects 0.000 claims description 57
- 239000012212 insulator Substances 0.000 claims description 10
- 238000009434 installation Methods 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000010453 quartz Substances 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000013461 design Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 241000233855 Orchidaceae Species 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The present invention relates to microelectronics technology, embodiment specifically discloses a kind of high frequency silicon base chip package module and method for packing, the package module carries out the transmission of high-frequency signal using the encapsulating structure of metal cavity waveguide+lead-over groove, make the radio frequency loss in transmitting procedure minimum, and metal cavity waveguide is formed by the first module and the second module split, first module and the second Modular surface are metal material, the first module and the second module fabricated using the precision optical machinery of mature and reliable, it can ensure very high dimensional accuracy, the high frequency silicon base chip package module and method for packing can effectively reduce the encapsulation loss of high-frequency signal, meet high-performance package requirement.
Description
Technical field
The present invention relates to microelectronics technology, and in particular to a kind of high frequency silicon base chip package module and method for packing.
Background technology
High-frequency integrated circuit is typically based on the design of three-five semiconductor process technique and processing, but as silicon substrate integrates
The development of circuit engineering, the cutoff frequency of germanium silicon semiconductor device and maximum concussion frequency have been able to more than 300GHz at present,
Therefore high-frequency integrated circuit can use silicon-based semiconductor technology to design and process completely, and si-substrate integrated circuit work
Skill technology in itself possessed high maturity, low cost, high integration the advantages that, can be designed using si-substrate integrated circuit technology
Process than based on the less expensive high-frequency integrated circuit of three-five semiconductor technology complexity higher, cost and system.
But up to now, high-frequency integrated circuit and system based on silicon-based technologies design processing are in encapsulation and application side
Face there is it is very big the problem of, if using traditional gold wire bonding leaded package technologies, radio frequency loss is big, the skill after encapsulation
Art index differs greatly with chip On-wafer measurement result.Research shows that in the range of frequency 67GHz-110GHz radio frequency loss is put down
Arrival -3.5dB.If reducing the radio frequency loss of si-substrate integrated circuit (silicon base chip) encapsulation process, some researchers open
Send the packaging technologies such as some face-down bondings, embedded chip level array ball bonding, radio frequency loss be reduced to ＜-
1.5dB, but it is these encapsulation technology complex process, of high cost, and the package application for failing to effectively solve high frequency silicon base chip is asked
Topic.
The content of the invention
In view of this, high loss problem is encapsulated for high frequency silicon base chip, present applicant proposes one kind to use metal cavity
The encapsulation modular structure and method for packing of waveguide+lead-over groove.The encapsulation modular structure and method for packing, which can be reduced effectively, to be penetrated
Frequency loss of signal, and the silicon base chip package application of higher frequency can be extended to.
To solve above technical problem, technical solution provided by the invention is a kind of high frequency silicon base chip package module, bag
Include the first metal cavity waveguide and the second metal cavity waveguide, the first metal cavity waveguide and second metal cavity
Waveguide is formed by the first module and the second module split, and first module and second Modular surface are metal material,
The first metal cavity waveguide and the second metal cavity waveguide extend to the high frequency silicon base chip package module outer surface
Place is both provided with flange installation structure, and the first module front is provided with the first chip slot, First Transition groove and the second transition
Groove, the first metal cavity waveguide, First Transition groove, the first chip slot, the second lead-over groove and the second metal cavity waveguide according to
Secondary arrangement.
More preferably, the first module front is provided with the first metal wave guide groove and the second metal wave guide groove, and described second
Module front is provided with the 3rd metal wave guide groove corresponding with the first metal waveguide groove location, and with the second metal wave guide groove
Corresponding 4th metal wave guide groove, when first module is with the second module split, the first metal wave guide groove and institute
State the 3rd metal wave guide groove split and form the first metal cavity waveguide, the second metal wave guide groove and the 4th metal wave
Guide groove split forms the second metal cavity waveguide.
More preferably, the second module front is provided with the 3rd lead-over groove corresponding with First Transition groove location, Yi Jiyu
4th lead-over groove of the second lead-over groove position correspondence, when first module is with the second module split, the First Transition
Groove forms First Transition cavity, second lead-over groove and the 4th lead-over groove split shape with the 3rd lead-over groove split
Into the second transitional cavity.
More preferably, the second module front is provided with the second chip slot with the first chip slot position correspondence, and described
When one module is with the second module split, first chip slot forms chip cavity with the second chip slot split.
More preferably, the first module front is provided with several DC feedback holes, and second module is provided with and institute
State the corresponding DC feedback groove in several DC feedback hole sites.
More preferably, first module and the second module are provided with the positioning pin nail of position correspondence and module fixes silk
Hole.
The present invention also provides a kind of high frequency silicon base chip method for packing, based on the high frequency silicon base chip described in claim 1
Package module, the described method includes：
High frequency silicon base chip is placed in the first chip slot, first wave guide transition element is placed in First Transition groove, will
Second waveguide transition element is placed in the second lead-over groove；
The radio frequency input electrode of high frequency silicon base chip is aligned with the signal end of first wave guide transition element, by high frequency silicon
The radio frequency output electrode of base chip is aligned with the signal end of second waveguide transition element, fixed high frequency silicon base chip, first wave guide
The position of transition element and second waveguide transition element；
The radio frequency input electrode of high frequency silicon base chip is bonded to by first wave guide transition element using gold wire bonding technique
Signal end, the signal end of second waveguide transition element is bonded to by the radio frequency output electrode of high frequency silicon base chip.
More preferably, it is described that high frequency silicon base chip is placed in chip slot, first wave guide transition element is placed in the first mistake
Aqueduct, before second waveguide transition element is placed in First Transition groove step, further includes：
Formed in the radio frequency input electrode end face of high frequency silicon base chip and radio frequency output electrode end face cured metal layer with
Prevent radiofrequency signal from revealing.
More preferably, the method further includes：
The installation feed insulator device in each DC feedback hole, using gold wire bonding technique by high frequency silicon base chip
Each DC electrode is bonded to corresponding feed insulator device, and DC power supply is provided for high frequency silicon base chip.
More preferably, the method further includes：
Shop bolt is installed in the positioning pin nail of the first module, buckles the second module, fixes in wire hole and twists in module
Upper fastener, to fix the first module and the second module.
Compared with prior art, its advantage describes in detail as follows the application：
(1) encapsulating structure of metal cavity waveguide+lead-over groove is used most beneficial for the transmission of high-frequency signal, and is transmitted across
Loss in journey is minimum.
(2) encapsulating structure of the metal cavity waveguide+lead-over groove used is made using the precision optical machinery processing of mature and reliable
To make, it is ensured that very high dimensional accuracy, the bonding wire of high frequency silicon base chip encapsulation process can reach minimum length, from
And reduce the encapsulation loss of high-frequency signal.
(3) encapsulating structure of the metal cavity waveguide+lead-over groove used belongs to single mode transport pattern, it is possible to prevente effectively from
The electromagnetic interference of other frequency signals.
(4) gold wire bonding packaging technology is used, maturity is high, cost is low, simple and reliable process, without building high cost
Face-down bonding, plant the packaging line such as ball and can complete the encapsulation of high frequency silicon base chip, and be entirely capable of meeting that high-performance package will
Ask.
Brief description of the drawings
Fig. 1 is high frequency silicon base chip encapsulation modular structure figure of the embodiment of the present invention；
The front schematic view of Fig. 2 the first modules of this embodiment of the present invention；
Fig. 3 is the front schematic view of the second module of the embodiment of the present invention；
Reference numeral is：The first modules of 1-, the second modules of 2-, 3- flange mounting holes, the first chip slots of 41-, 42- second
Chip slot, 51- First Transition grooves, the second lead-over grooves of 52-, the 3rd lead-over grooves of 53-, the 4th lead-over grooves of 54-, the first metal waves of 61-
Guide groove, 62- the second metal wave guide grooves, the 3rd metal wave guide grooves of 63-, the 4th metal wave guide grooves of 64-, 71- DC feedbacks hole, 72-
DC feedback groove, 8- positioning pin nail, 9- modules fix wire hole, 10- power panels power supply wire hole.
Embodiment
In order to make those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specifically
The present invention is described in further detail for embodiment.
As shown in Figure 1-Figure 3, the embodiment of the present invention provides a kind of high frequency silicon base chip package module, including the first metal
Cavity waveguide and the second metal cavity waveguide, the first metal cavity waveguide and the second metal cavity waveguide are by the first module 1 and
Two modules, 2 split is formed, and the first module 1 and 2 surface of the second module are metal material.Wherein, the first module 1 and the second mould
Block 2 can generally metal module；It can also be that other materials module coats or paste metal material on surface, form gold
Belong to material surface.
First module, 1 front is provided with chip slot 41, First Transition groove 51, the second lead-over groove 52, the first metal wave guide groove
61st, the second metal wave guide groove 62；Second module front is provided with the 3rd metal wave with 61 position correspondence of the first metal wave guide groove
Guide groove 63, and with 62 corresponding 4th metal wave guide groove 64 of the second metal wave guide groove, when the first module and the second module split
When, the first metal wave guide groove 61 and 63 split of the 3rd metal wave guide groove form the first metal cavity waveguide, the second metal wave guide groove
62 and 64 split of the 4th metal wave guide groove formed the second metal cavity waveguide.First metal cavity waveguide, First Transition groove 51,
Chip slot 41, the second lead-over groove 52 and the second metal cavity waveguide are sequentially arranged.First metal cavity waveguide and the second wire chamber
Bulk wave, which is led, to be extended to the high frequency silicon base chip package module outer surface and is both provided with flange installation structure 3.
Wherein, the first metal cavity waveguide and the second metal cavity waveguide can be rectangular waveguide, the first wire chamber bulk wave
Lead the first module 1 and 2 split of the second module fabricated by precision optical machinery with the second metal cavity waveguide to be formed, its waveguide
Size can be depending on being actually needed from the design of 20GHz-700GHz frequency ranges.Flange installation structure 3 is used for Method for Installation
Orchid, being fastenedly connected for the high frequency silicon based package module and external module is provided by flange.
More preferably mode, 2 front of the second module are provided with the 3rd lead-over groove 53 with 51 position correspondence of First Transition groove,
And the 4th lead-over groove 54 with 52 position correspondence of the second lead-over groove, when the first module 1 and the second 2 split of module, First Transition
Groove 51 and 53 split of the 3rd lead-over groove form First Transition cavity, the second lead-over groove 52 and 54 split of the 4th lead-over groove formation the
Two transitional cavities.Here, First Transition cavity and the second transitional cavity are metal cavity, can further prevent radio frequency
Signal is revealed, and is disturbed by extraneous electromagnetic signals.
More preferably mode, 2 front of the second module are provided with the second chip slot 42 with 41 position correspondence of the first chip slot,
When the first module 1 and the second 2 split of module, the first chip slot 41 and 42 split of the second chip slot form chip cavity.Here core
Piece cavity is metal cavity, further can prevent radiofrequency signal from revealing, and disturbed by extraneous electromagnetic signals.
In addition, 1 front of the first module is additionally provided with several DC feedback holes 71, the second module 2 is provided with and several
The DC feedback groove 72 of 71 position correspondence of DC feedback hole.
In addition, the first module 1 and the second module 2 are additionally provided with the positioning pin nail 8 of position correspondence and module fixes wire hole
9。
In addition, 1 front of the first module is additionally provided with power panel power supply wire hole 10, for powering to power panel.
The embodiment of the present invention also provides a kind of high frequency silicon base chip method for packing, is sealed based on above-mentioned high frequency silicon base chip
Die-filling piece, this method includes：
S1：High frequency silicon base chip is placed in the first chip slot 41, first wave guide transition element is placed in First Transition
Groove 51, the second lead-over groove 52 is placed in by second waveguide transition element；
S2：The radio frequency input electrode of high frequency silicon base chip is aligned with the signal end of first wave guide transition element, by high frequency
The radio frequency output electrode of silicon base chip is aligned with the signal end of second waveguide transition element, fixed high frequency silicon base chip, first wave
Lead the position of transition element and second waveguide transition element；
S3：The radio frequency input electrode of high frequency silicon base chip is bonded to by first wave guide transition member using gold wire bonding technique
The signal end of part, the signal end of second waveguide transition element is bonded to by the radio frequency output electrode of high frequency silicon base chip.
Wherein, first wave guide transition element and second waveguide transition element can be film quartz probe, using spun gold key
Technique is closed, the signal end of the first film quartz probe is bonded to high frequency silicon base chip radio frequency input electrode, by the second film stone
The signal end of English probe is bonded to high frequency silicon base chip radio frequency output electrode.High frequency silicon base chip, first wave guide transition element and
Second waveguide transition element can be fixed in bottom with conductive silver paste.
The metal cavity waveguide of use+film quartz probe transition encapsulating structure is added using the precision optical machinery of mature and reliable
Work manufactures, it is ensured that very high dimensional accuracy, the bonding wire of high frequency si-substrate integrated circuit encapsulation process can reach minimum
Length, because the machining accuracy of metal cavity waveguide and film quartz probe can be very high, radio frequency on such high frequency silicon base chip
The distance of electrode to film quartz probe can be accurately aligned, from high frequency silicon base chip high-frequency electrode to film quartz probe
Lead can be very short, and the length of lead directly determines loss, so as to reduce the encapsulation loss of high-frequency signal.
More preferably mode, before step S1, further includes：S0：In the radio frequency input electrode end face of high frequency silicon base chip and penetrate
Frequency output electrode end face, which forms curing metal layer, prevents radiofrequency signal from revealing.
Wherein it is possible to using radio frequency input electrode end face and radio frequency output electrode end face high frequency silicon base chip, with leading
Electric silver paste is coated and cured, or overleaf forms the processes such as metal layer with end face using metal deposition, is penetrated with reducing
Frequency signal is from the leakage of silicon-based substrate, so as to reduce radio frequency loss.Gold wire bonding technique combination high frequency silicon base chip side metal
The novel packaging technology of edge sealing, can effectively reduce radio frequency loss.
In addition, the method for packing further includes：S4：The installation feed insulator device in each DC feedback hole, using spun gold
Each DC electrode of high frequency silicon base chip is bonded to each corresponding feed insulator device by bonding technology, is high frequency silicon substrate core
Piece provides DC power supply.
Wherein, it can be feed glass insulator to feed insulator device, and DC power supply is provided for high frequency silicon base chip.
Each DC electrode on high frequency silicon base chip is bonded on each corresponding feed glass insulator using gold wire bonding technique.
In addition, the method for packing further includes：S5：Shop bolt is installed in the positioning pin nail 8 of the first module 1, is buckled
Second module 2, fixes in wire hole 9 in six modules and screws on screw, fix the first module and the second module.
In addition, the method for packing further includes：S5：In the back of the first module installation power supply pcb board, power supply passes through
Power panel power supply wire hole 10 gives pcb board to power.
Here, power supply is converted to the DC power supply of high frequency silicon base chip needs by pcb board, by each power feed hole
Feed glass insulator be transferred to each DC electrode of high frequency silicon base chip, high frequency silicon base chip is worked normally.
The high frequency si-substrate integrated circuit module uses the metal cavity waveguiding structure that split is formed, and is visited using film quartz
The radiofrequency signal of high frequency silicon base chip is transitted to metal cavity waveguide by pin, completes the radiofrequency signal input of high frequency silicon base chip
Output function is changed.
The high frequency si-substrate integrated circuit module is fabricated using the precision optical machinery of mature and reliable, it is ensured that very high
Dimensional accuracy, the bonding wire of high frequency si-substrate integrated circuit encapsulation process can reach minimum length, while metal cavity waveguide
+ film quartz probe transition encapsulating structure is ensureing single mode transport input and output high frequency letter most beneficial for the transmission of high-frequency signal
Number work in, it is possible to prevente effectively from the electromagnetic interference of other frequency signals.The high frequency silicon base chip package module and encapsulation side
Method, can be adapted for frequency from the package application of the high frequency silicon base chip of 20GHz-700GHz.
It the above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair
The limitation of the present invention, protection scope of the present invention should be subject to claim limited range.For the art
For those of ordinary skill, without departing from the spirit and scope of the present invention, some improvements and modifications can also be made, these
Improvements and modifications also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of high frequency silicon base chip package module, it is characterised in that including the first metal cavity waveguide and the second metal cavity
Waveguide, the first metal cavity waveguide and the second metal cavity waveguide are formed by the first module and the second module split,
First module and second Modular surface are metal material, the first metal cavity waveguide and second metal
Cavity waveguide extends to the high frequency silicon base chip package module outer surface and is both provided with flange installation structure, first module
Front is provided with the first chip slot, First Transition groove and the second lead-over groove, the first metal cavity waveguide, First Transition groove,
First chip slot, the second lead-over groove and the second metal cavity waveguide are sequentially arranged.
2. high frequency silicon base chip package module according to claim 1, it is characterised in that the first module front is set
There are the first metal wave guide groove and the second metal wave guide groove, the second module front is provided with and the first metal waveguide groove location pair
The 3rd metal wave guide groove answered, and the 4th metal wave guide groove corresponding with the second metal wave guide groove, first module and institute
When stating the second module split, the first metal wave guide groove forms the first wire chamber bulk wave with the 3rd metal wave guide groove split
Lead, the second metal wave guide groove forms the second metal cavity waveguide with the 4th metal wave guide groove split.
3. high frequency silicon base chip package module according to claim 1, it is characterised in that the second module front is set
There are the 3rd lead-over groove corresponding with First Transition groove location, and the 4th lead-over groove with the second lead-over groove position correspondence, it is described
When first module is with the second module split, the First Transition groove forms First Transition chamber with the 3rd lead-over groove split
Body, second lead-over groove form the second transitional cavity with the 4th lead-over groove split.
4. high frequency silicon base chip package module according to claim 1, it is characterised in that the second module front is set
There is the second chip slot with the first chip slot position correspondence, when first module is with the second module split, described first
Chip slot forms chip cavity with the second chip slot split.
5. high frequency silicon base chip package module according to claim 1, it is characterised in that the first module front is set
There are several DC feedback holes, second module is provided with DC feedback corresponding with several described DC feedback hole sites
Groove.
6. high frequency silicon base chip package module according to claim 1, it is characterised in that first module and the second mould
Block is provided with the positioning pin nail of position correspondence and module fixes wire hole.
A kind of 7. high frequency silicon base chip method for packing, based on the high frequency silicon base chip package module described in claim 1, the side
Method includes：
High frequency silicon base chip is placed in the first chip slot, first wave guide transition element is placed in First Transition groove, by second
Waveguide transition component positioning is in the second lead-over groove；
The radio frequency input electrode of high frequency silicon base chip is aligned with the signal end of first wave guide transition element, by high frequency silicon base chip
Radio frequency output electrode be aligned with the signal end of second waveguide transition element, fixed high frequency silicon base chip, first wave guide transition member
The position of part and second waveguide transition element；
The radio frequency input electrode of high frequency silicon base chip is bonded to the signal of first wave guide transition element using gold wire bonding technique
End, the signal end of second waveguide transition element is bonded to by the radio frequency output electrode of high frequency silicon base chip.
8. high frequency silicon base chip method for packing according to claim 7, it is characterised in that described to pacify high frequency silicon base chip
Put in chip slot, first wave guide transition element is placed in First Transition groove, second waveguide transition element is placed in the first mistake
Before aqueduct step, further include：
Cured metal layer is formed in the radio frequency input electrode end face of high frequency silicon base chip and radio frequency output electrode end face to prevent
Radiofrequency signal is revealed.
9. high frequency silicon base chip method for packing according to claim 7, it is characterised in that the method further includes：
The installation feed insulator device in each DC feedback hole, using gold wire bonding technique by each direct current of high frequency silicon base chip
Electrode is bonded to corresponding feed insulator device, and DC power supply is provided for high frequency silicon base chip.
10. high frequency silicon base chip method for packing according to claim 7, it is characterised in that the method further includes：
Shop bolt is installed in the positioning pin nail of the first module, buckles the second module, fixes in wire hole and is screwed on tightly in module
Firmware, to fix the first module and the second module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711297763.7A CN108022890A (en) | 2017-12-08 | 2017-12-08 | High frequency silicon base chip package module and method for packing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711297763.7A CN108022890A (en) | 2017-12-08 | 2017-12-08 | High frequency silicon base chip package module and method for packing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108022890A true CN108022890A (en) | 2018-05-11 |
Family
ID=62073076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711297763.7A Pending CN108022890A (en) | 2017-12-08 | 2017-12-08 | High frequency silicon base chip package module and method for packing |
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| CN (1) | CN108022890A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969976A (en) * | 2012-11-19 | 2013-03-13 | 东南大学 | Compact terahertz power synthesis frequency multiplier circuit |
| CN103207291A (en) * | 2013-03-14 | 2013-07-17 | 中国科学院上海微系统与信息技术研究所 | V-waveband planar circuit testing clamp |
| CN105609489A (en) * | 2015-12-29 | 2016-05-25 | 中国工程物理研究院电子工程研究所 | Improved waveguide probe transition based structure for performing modular packaging for chip |
| CN106505285A (en) * | 2016-09-26 | 2017-03-15 | 西安空间无线电技术研究所 | The millimeter wave high reliability light guide module that a kind of preventing RF signal is revealed |
-
2017
- 2017-12-08 CN CN201711297763.7A patent/CN108022890A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969976A (en) * | 2012-11-19 | 2013-03-13 | 东南大学 | Compact terahertz power synthesis frequency multiplier circuit |
| CN103207291A (en) * | 2013-03-14 | 2013-07-17 | 中国科学院上海微系统与信息技术研究所 | V-waveband planar circuit testing clamp |
| CN105609489A (en) * | 2015-12-29 | 2016-05-25 | 中国工程物理研究院电子工程研究所 | Improved waveguide probe transition based structure for performing modular packaging for chip |
| CN106505285A (en) * | 2016-09-26 | 2017-03-15 | 西安空间无线电技术研究所 | The millimeter wave high reliability light guide module that a kind of preventing RF signal is revealed |
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Application publication date: 20180511 |