CN108020992B - A kind of liquid feed apparatus of immersion and method - Google Patents
A kind of liquid feed apparatus of immersion and method Download PDFInfo
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- CN108020992B CN108020992B CN201610931702.0A CN201610931702A CN108020992B CN 108020992 B CN108020992 B CN 108020992B CN 201610931702 A CN201610931702 A CN 201610931702A CN 108020992 B CN108020992 B CN 108020992B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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Abstract
The invention discloses a kind of liquid feed apparatus of immersion and methods, the device includes liquid supply equipment, the horizontal liquid feeding channel connecting with the liquid supply equipment and vertical liquid feeding channel, the flow controller between the liquid supply equipment and vertical liquid feeding channel, the feed flow flow control system connecting with the flow controller, and the control system connecting with the feed flow flow control system and silicon wafer stage kinetic control system, the horizontal liquid feeding channel and vertical liquid feeding channel are set in immersion liquid limiting mechanism.Feed flow flow control system is set to adjust according to silicon wafer stage Motion trajectory information control flow amount controller the immersion liquid flow in vertical liquid feeding channel in real time by control system, the variation of power between immersion liquid limiting mechanism and silicon wafer stage is compensated, the immersion liquid flowing pressure in the gap of immersion liquid limiting mechanism lower surface and silicon wafer upper surface is set to be in steady state, effectively prevent silicon wafer stress deformation, lithographic equipment focusing error is reduced, the performance of exposure accuracy and litho machine is improved.
Description
Technical field
The present invention relates to technical field of lithography, and in particular to a kind of liquid feed apparatus of immersion and method.
Background technique
Based on optical lithography, it accurately projects the figure on mask plate modern lithographic equipment using optical system
It is exposed on the substrate (such as: silicon wafer) of coated photoresist.Liquid immersion lithography refer between exposure cameras and silicon wafer full of water (or
The immersion liquid of higher refraction) to replace corresponding air in conventional dry photoetching technique.Since the refractive index of water is bigger than air,
This allows for the increase of lens group numerical aperture, and then can get smaller characteristic line breadth.
Existing immersed photoetching machine structure is as shown in Figure 1, in the apparatus, main frame 1 supports a lighting system 2, one
Projection objective 4 and a silicon wafer stage 8 are placed with a silicon wafer 7 for being coated with light sensitive photoresist on silicon wafer stage 8.The immersed photoetching machine knot
Immersion liquid (water) 5 is filled between projection objective 4 and silicon wafer 7 in gap by structure.When work, pass through photoeletric measuring system 10 and light
Beam 9 obtains 8 position of silicon wafer stage, and control silicon wafer stage 8 drives silicon wafer 7 to make the scanning of high speed, the stepwise operation, (leaching of immersion liquid limiting mechanism
No head) 6 one stable apparatus soaking liquid flow field 5 is provided, is protected simultaneously in projection objective field range according to the motion state of silicon wafer stage 8
Flow field 5 and extraneous sealing are demonstrate,proved, guarantees that liquid does not leak.The figure of integrated circuit passes through lighting system 2 and projection on mask 3
Object lens 4, immersion liquid 5 is transferred on the silicon wafer 7 for being coated with light sensitive photoresist in a manner of Imagewise exposure, to complete to expose.
Silicon wafer 7 is downloaded to from silicon wafer stage 8 from uploading to silicon wafer stage 8, general by as shown in Figure 2: initial phase, amount
School stage, mask registration stage and the corresponding handling and operation of exposure stage are surveyed between production.Initial phase includes initialization object plane
Calibration and initialization image planes, in this stage, silicon wafer stage 8 must be moved in the direction Z, Rx, Ry；Surveying the school stage between volume production must be
Z-direction adjusts 8 position of silicon wafer stage in real time；For mask registration stage silicon wafer stage 8 except in addition to X, Y-direction are scanned, Z-direction position also can be into
Row adjustment；Exposure stage, due to being influenced by silicon wafer geometrical morphology, silicon wafer stage 8 must equally adjust Z-direction position in real time.
The working principle of immersion system will be as shown in figure 3, setting immersion liquid limiting mechanism-submergence head 6, submergence head 6 will be for that will soak
Liquid 5(water) it is limited between projection objective 4 and silicon wafer 7 in gap.Immersion liquid is supplied to submergence head 6 by liquid supply equipment.In feed flow
Fluid pressure, flow controlling unit are set in equipment, in a certain range by the pressure of immersion liquid supply, flow restriction.By
In liquid supply equipment be arranged water pollution processing unit, by pollution in water handle to meet immersion liquid pollution require；By in liquid supply equipment
Middle setting temperature control unit, by water supply handle to meet dip temperature requirement.Gas is set simultaneously and is set for giving gas-liquid recycling
It is standby, for the compensation of ultra-clean humid air and gas-liquid recycling.Gas supply with gas-liquid reclaimer in be arranged ultra-clean humid air pressure,
Within limits by supply gas pressure, flow control gas-liquid pressure recovery, flow controlling unit is arranged in flow controlling unit,
Within limits by gas-liquid pressure recovery and flow control；Ultra-clean humid air pollution control unit is set, by ultra-clean
Pollution is handled to meeting the requirements in humid air；Ultra-clean humid air temperature and humidity control unit is set, by ultra-clean humid air
Processing is required to temperature and humidity is met.
It is existing submergence head 6 outer profile form it is different, but in-profile be with the matched pyramidal structure of lens geometry shape,
Its general structure is as shown in Figure 3.The immersion liquid of liquid supply equipment supply is by filling projection after immersion liquid supply channel outflow in submergence head 6
It is recycled after immersion liquid recycles runner outflow by immersion liquid in submergence head 6 by gas-liquid reclaimer in gap between object lens 4 and silicon wafer 7.
Therefore, apparatus soaking liquid flow field 5 is formd in slit between projection objective 4 and silicon wafer 7, it is desirable that the liquid in apparatus soaking liquid flow field 5, which is in, to be held
Continuous flow regime, no reflux, and the ingredient of liquid, pressure field, velocity field, temperature field transient state and stable state variation are less than certain model
It encloses.
It submerges between 6 lower surface of head and silicon wafer 7 there are the gap of certain altitude " GAP ", in order to prevent the liquid in apparatus soaking liquid flow field
Body is leaked from this gap, and air feed equipment supplies compressed air for air cavity 621 into submergence head 6 by supply air line 622, such as
Shown in Fig. 3, compressed air, by the ejection of gas supply osculum 620 for 621 bottom of air cavity, forms court after for buffering in air cavity 621
To " air knife " of silicon chip surface.The pressure increase region that " air knife " is formed forms the gas " curtain " for stopping liquid leakage in liquid field,
The gas-liquid mixture at apparatus soaking liquid flow field edge is by 630 pump drainage of gas-liquid pump drainage mouth to gas-liquid reclaiming chamber 631, and gas-liquid mixture is in gas-liquid
After buffering in reclaiming chamber 631, submergence head 6 is pumped out through pump drainage flow path 632 by gas-liquid reclaimer, so that it is close to realize flow field
Envelope.However the immersed photoetching machine has a defect that, between initial phase, volume production survey the school stage, the mask registration stage and
Exposure stage, the height that the movement of silicon wafer stage in z-direction will lead to gap " GAP " change, so as to cause leaching in " GAP "
Liquid stream field changes to the power of silicon wafer 7 and causes focusing error, generates exposure defect.
Summary of the invention
The present invention provides a kind of liquid feed apparatus of immersion and methods, to solve problems of the prior art.
In order to solve the above-mentioned technical problem, the technical scheme is that a kind of liquid feed apparatus of immersion, including feed flow are set
Horizontal liquid feeding channel and vertical liquid feeding channel, the stream on the vertical liquid feeding channel standby, connect with the liquid supply equipment
Amount controller, the feed flow flow control system being connect with the flow controller, and with the feed flow flow control system and
The control system of silicon wafer stage kinetic control system connection, the horizontal liquid feeding channel and vertical liquid feeding channel are set to immersion liquid and limit machine
In structure, the feed flow flow control system is according to the gap between the silicon wafer upper surface being arranged on the silicon wafer stage and liquid supply equipment
Vertical height change control the immersion liquid flow in the vertical liquid feeding channel.
Further, the liquid supply equipment include the horizontal fluid injection unit being connect with the horizontal liquid feeding channel and with it is described
The vertical fluid injection unit of vertical liquid feeding channel connection.
Further, it is connected between the vertical fluid injection unit and the vertical liquid feeding channel by fluid injection primary flow path, institute
Flow controller is stated in the fluid injection primary flow path.
Further, the fluid injection primary flow path is equipped at least three, and every fluid injection primary flow path is equipped with a flow
Controller.
Further, the horizontal liquid feeding channel level is set to the top of the immersion liquid limiting mechanism.
It further, further include going out in the immersion liquid limiting mechanism and with what the horizontal liquid feeding channel was oppositely arranged
Liquid channel.
Further, further include air supply channel and gas-liquid recovery approach, the vertical liquid feeding channel, gas-liquid recovery approach and
The outlet of air supply channel is arranged successively from the inside to the outside along the bottom of the immersion liquid limiting mechanism.
Further, the control system includes complete machine control system and synchronous control system, the complete machine control system
Silicon wafer stage Motion trajectory information, the synchronization are sent to the feed flow flow control system and silicon wafer stage kinetic control system
Control system sends synchronously control timing information to the feed flow flow control system and silicon wafer stage kinetic control system.
Further, the first computing unit, silicon wafer stage motion control system are equipped in the feed flow flow control system
The second computing unit is equipped in system.
Further, the vertical liquid feeding channel is equipped at least three, each corresponding stream of vertical liquid feeding channel
Amount controller.
The present invention also provides a kind of immersion liquid supply methods, comprising the following steps:
S1: immersion liquid is injected into immersion liquid limiting mechanism by horizontal liquid feeding channel and vertical liquid feeding channel；
S2: the gas curtain to immersion liquid sealing is formed by air supply channel, passes through liquid outlet channel and gas-liquid recovery approach point
It is other that immersion liquid and gas-liquid mixture are recycled；
S3: control system control silicon wafer stage kinetic control system drives silicon wafer stage to move along the track of planning, controls simultaneously
Flow controller adjusts the immersion liquid flow in vertical liquid feeding channel according to the planned trajectory of silicon wafer stage, makes immersion liquid limiting mechanism following table
Immersion liquid flowing pressure in the gap of face and silicon wafer upper surface is in steady state.
Further, the complete machine control system is sent out to the feed flow flow control system and silicon wafer stage kinetic control system
Silicon wafer stage Motion trajectory information is sent, the second computing unit in silicon wafer stage kinetic control system advises silicon wafer stage motion profile
Specific coordinate information is converted into the executable order of silicon wafer stage Motor execution element in drawing, and silicon wafer stage is driven to execute specific fortune
Movement；The first computing unit in the feed flow flow control system believes coordinate specific in silicon wafer stage Motion trajectory
Breath is converted into the executable order of flow controller, controls the immersion liquid flow in vertical liquid feeding channel.
Further, the synchronous control system is sent out to the feed flow flow control system and silicon wafer stage kinetic control system
Synchronously control timing information is sent, keeps the movement of silicon wafer stage synchronous with the immersion liquid flow adjustment holding in vertical liquid feeding channel, makes to soak
Immersion liquid flowing pressure in the gap of liquid limiting mechanism lower surface and silicon wafer upper surface is in steady state.
Liquid feed apparatus of immersion provided by the invention and method, the device include liquid supply equipment, connect with the liquid supply equipment
Horizontal liquid feeding channel and vertical liquid feeding channel, the flow controller between the liquid supply equipment and vertical liquid feeding channel,
The feed flow flow control system being connect with the flow controller, and moved with the feed flow flow control system and silicon wafer stage
The control system of control system connection, the horizontal liquid feeding channel and vertical liquid feeding channel are set in immersion liquid limiting mechanism.Pass through
The control system connecting with feed flow flow control system and silicon wafer stage kinetic control system, makes feed flow flow control system according to silicon
Piece platform Motion trajectory information control flow amount controller adjusts the immersion liquid flow in vertical liquid feeding channel in real time, limits immersion liquid
The variation of power compensates between mechanism and silicon wafer stage, makes the immersion liquid in the gap of immersion liquid limiting mechanism lower surface and silicon wafer upper surface
Flowing pressure is in steady state, effectively prevents silicon wafer stress deformation, reduces lithographic equipment focusing error, improves exposure
The performance of precision and litho machine.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing immersed photoetching machine；
Fig. 2 be in existing immersed photoetching machine silicon wafer from silicon wafer stage is uploaded to the flow chart downloaded from silicon wafer stage；
Fig. 3 is the working principle diagram of existing immersion system；
Fig. 4 is the structural schematic diagram of liquid feed apparatus of immersion in the embodiment of the present invention 1；
Fig. 5 is the bottom view of immersion liquid limiting mechanism in the embodiment of the present invention 1；
Fig. 6 is the working principle diagram of control system in the embodiment of the present invention 1；
Fig. 7 a is variable quantity schematic diagram of the silicon wafer stage in Z-direction in the embodiment of the present invention 1；
Fig. 7 b, 7c are the schematic diagrames of two kinds of specific compensation ways in the embodiment of the present invention 1；
Fig. 8 is the working principle diagram of control system in the embodiment of the present invention 2.
Shown in Fig. 1-3: 1, main frame；2, lighting system；3, mask；4, projection objective；5, immersion liquid；6, head is submerged；
620, osculum is supplied；621, for air cavity；622, supply air line；630, gas-liquid pump drainage mouth；631, gas-liquid recycles；632, pump drainage stream
Road；7, silicon wafer；8, silicon wafer stage；9, light beam；10, photoeletric measuring system；
Shown in Fig. 4-8: 10, liquid supply equipment；11, horizontal fluid injection unit；12, vertical fluid injection unit；20, horizontal feed flow is logical
Road；21, vertical liquid feeding channel；22, liquid outlet channel；23, air supply channel；24, gas-liquid recovery approach；25,25a-25c, fluid injection master
Flow path；30,30a-30c, flow controller；40, feed flow flow control system；41, the first computing unit；50, silicon wafer stage moves
Control system；51, the second computing unit；60, immersion liquid limiting mechanism；61, the first plane；62, the second plane；63, third plane；
64, fourth plane；70, silicon wafer；81, complete machine control system；82, synchronous control system；90, immersion liquid.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing.
Embodiment 1
As shown in figure 4, a kind of liquid feed apparatus of immersion of the present invention, including liquid supply equipment 10, it connect with the liquid supply equipment 10
Horizontal liquid feeding channel 20 and vertical liquid feeding channel 21, the flow between the liquid supply equipment 10 and vertical liquid feeding channel 21
Controller 30, the feed flow flow control system 40 being connect with the flow controller 30, and with feed flow flow control system
The control system that system 40 and silicon wafer stage kinetic control system 50 connect, the horizontal liquid feeding channel 20 and vertical liquid feeding channel 21 are set
In in immersion liquid limiting mechanism 60, the feed flow flow control system 40 is according to the silicon wafer upper surface being arranged on the silicon wafer stage and supplies
The vertical height change in the gap between liquid equipment 10 controls the immersion liquid flow in the vertical liquid feeding channel 21.It is by control
It is vertical that system adjusts feed flow flow control system 40 in real time according to silicon wafer stage Motion trajectory information control flow amount controller 30
Immersion liquid flow in liquid feeding channel 21, compensates the variation of power between immersion liquid limiting mechanism 60 and silicon wafer stage, limits immersion liquid
Immersion liquid flowing pressure in the gap of 60 lower surface of mechanism and 70 upper surface of silicon wafer is in steady state, effectively prevents silicon wafer 70
Stress deformation reduces lithographic equipment focusing error, improves the performance of exposure accuracy and litho machine.
Please continue to refer to Fig. 1, the liquid supply equipment 10 includes the horizontal fluid injection list connecting with the horizontal liquid feeding channel 20
Member 11 and the vertical fluid injection unit 12 being connect with the vertical liquid feeding channel 21, respectively to horizontal liquid feeding channel 20 and vertical feed flow
Immersion liquid 90 is injected in channel 21.Connected between the vertical fluid injection unit 12 and the vertical liquid feeding channel 21 by fluid injection primary flow path 25
Logical, the flow controller 30 is set in the fluid injection primary flow path 25, controls the immersion liquid flow of vertical liquid feeding channel 21.
Preferably, the horizontal top for being set to the immersion liquid limiting mechanism 60 of the horizontal liquid feeding channel 20, immersion liquid supply
Device further includes the liquid outlet channel 22 being oppositely arranged in the immersion liquid limiting mechanism 60 and with the horizontal liquid feeding channel 20,
It is connected to gas-liquid reclaimer, for recycling immersion liquid 90, to realize circulating for immersion liquid 90.
Preferably, which further includes air supply channel 23 and gas-liquid recovery approach 24, and the vertical feed flow is logical
It is successively arranged from the inside to the outside along the bottom of the immersion liquid limiting mechanism 60 outlet in road 21, gas-liquid recovery approach 24 and air supply channel 23
Column.Gas-liquid recovery approach 24 is connected to gas-liquid reclaimer, as shown in figure 5, the vertical liquid feeding channel 21, gas-liquid recovery approach
24 and 23 three of air supply channel be located at immersion liquid limiting mechanism 60 bottom opening by the bottom of immersion liquid limiting mechanism 60 by introversion
It is divided into the first plane 61, the second plane 62, third plane 63 and fourth plane 64 outside, after adding vertical liquid feeding channel 21,
It is incompressible liquid level in first plane 61 and the distance between the second plane 62 and 70 upper surface of silicon wafer " GAP ", passes through
The immersion liquid flow of vertical liquid feeding channel 21 is adjusted, with the fluctuation of power in compensation " GAP ".
As shown in fig. 6, the control system includes complete machine control system 81 and synchronous control system 82, the complete machine control
System 81 sends silicon wafer stage Motion trajectory letter to the feed flow flow control system 40 and silicon wafer stage kinetic control system 50
Breath, the synchronous control system 82 are controlled to the feed flow flow control system 40 is synchronous with the transmission of silicon wafer stage kinetic control system 50
Timing information processed.Complete machine control system 81 does not instead of only refer to simple electrical, electronic component control, includes all kinds of management
Modulus In Singular Contral Systems, complete machine control system organically connect silicon wafer stage kinetic control system 50 and feed flow flow control system 40
Get up and control 40 co-ordination of silicon wafer stage kinetic control system 50 and feed flow flow control system, realizes to the various function of litho machine
The control of energy, completes each workflow of litho machine.Synchronous control system 82 is then with thinner time Grain size controlling silicon wafer stage
The precise synchronization that kinetic control system 50 and feed flow flow control system 40 act, synchronous silicon wafer stage kinetic control system 50 and confession
Liquid stream amount control system 40 completes each specific physical action, silicon wafer stage kinetic control system 50 and feed flow flow control system
System 40 completes defined movement according to timing requirements.
Please continue to refer to Fig. 6, the first computing unit 41, the silicon wafer stage fortune are equipped in the feed flow flow control system 40
The second computing unit 51 is equipped in autocontrol system 50.Complete machine control system 81 is to the feed flow flow control system 40 and silicon wafer
Platform kinetic control system 50 sends silicon wafer stage Motion trajectory information, which includes specific
Coordinate information, the second computing unit 51 in silicon wafer stage kinetic control system 50 will specifically be sat in silicon wafer stage Motion trajectory
Mark information is converted into the executable order of silicon wafer stage Motor execution element, and silicon wafer stage is driven to execute specific athletic performance, including
The school stage is surveyed between initial phase, volume production, silicon wafer stage is surveyed in school stage and mask registration stage between volume production in the tool of Z-direction
Body movement.The first computing unit 41 in the feed flow flow control system 40 will specifically be sat in silicon wafer stage Motion trajectory
Mark information is converted into the executable order of flow controller 30, controls the immersion liquid flow in vertical liquid feeding channel 21.The synchronization
Control system 82 sends synchronously control timing information to the feed flow flow control system 40 and silicon wafer stage kinetic control system 50,
Keep the movement of silicon wafer stage synchronous with the immersion liquid flow adjustment holding in vertical liquid feeding channel 21, makes 60 lower surface of immersion liquid limiting mechanism
Steady state is in the immersion liquid flowing pressure in the gap of 70 upper surface of silicon wafer.Specifically, being surveyed between initial phase, volume production
It is surveyed in school stage and mask registration stage between school stage, volume production, control while Z-direction moves of control silicon wafer stage is vertical to supply
The fluid injection flow in liquid channel 21, i.e., when silicon wafer stage causes on 60 lower surface of immersion liquid limiting mechanism and silicon wafer 70 in the movement of Z-direction
When gap " GAP " changes between surface, the synchronous change of fluid injection flow that flow controller 30 adjusts vertical liquid feeding channel 21 is controlled in time
Change, vertical fluid injection flow increases in real time when " GAP " increases, " GAP " when reducing vertical fluid injection flow reduce in real time, i.e., vertical fluid injection
Flow increases with submergence head lower surface and the increase of gap " GAP " between silicon wafer upper surface, vertical supply flow rate is under submergence head
The reduction of gap " GAP " between surface and silicon wafer upper surface and reduce, thus realize to power between immersion liquid limiting mechanism 60 and silicon wafer stage
Variation compensate, to reduce the fluctuation of power between immersion liquid limiting mechanism 60 and silicon wafer stage, be conducive to reduce silicon wafer stress deformation
With lithographic equipment focusing error.
The present invention also provides a kind of immersion liquid supply methods, comprising the following steps:
S1: immersion liquid 90 is injected into immersion liquid limiting mechanism 60 by horizontal liquid feeding channel 20 and vertical liquid feeding channel 21；
S2: the gas curtain sealed to the immersion liquid 90 is formed by air supply channel 23, is recycled by liquid outlet channel 22 and gas-liquid
Immersion liquid 90 and gas-liquid mixture are recycled respectively in channel 24；
S3: control system control silicon wafer stage kinetic control system 50 drives silicon wafer stage to move along the track of planning, same to time control
Flow controller 30 processed adjusts the immersion liquid flow in vertical liquid feeding channel 21 according to the planned trajectory of silicon wafer stage, and immersion liquid is made to limit machine
Immersion liquid flowing pressure in the gap of 60 lower surface of structure and 70 upper surface of silicon wafer is in steady state.Specifically, complete machine control system
System 81 sends silicon wafer stage Motion trajectory information to the feed flow flow control system 40 and silicon wafer stage kinetic control system 50,
The silicon wafer stage Motion trajectory information includes specific coordinate information, and second in silicon wafer stage kinetic control system 50 calculates single
Coordinate information specific in silicon wafer stage Motion trajectory is converted the executable order of silicon wafer stage Motor execution element by member 51,
Drive silicon wafer stage to execute specific athletic performance, be included between initial phase, volume production survey between school stage, volume production survey the school stage with
And specific movement of the silicon wafer stage in Z-direction in the mask registration stage.First in the feed flow flow control system 40 calculates list
Coordinate information specific in silicon wafer stage Motion trajectory is converted the executable order of flow controller 30 by member 41, and control is hung down
Immersion liquid flow in straight liquid feeding channel 21.The synchronous control system 82 is transported to the feed flow flow control system 40 and silicon wafer stage
Autocontrol system 50 sends synchronously control timing information, makes the immersion liquid flow tune in the movement and vertical liquid feeding channel 21 of silicon wafer stage
Whole holding synchronizes, and 60 lower surface of immersion liquid limiting mechanism is made to be in constant with the immersion liquid flowing pressure in the gap of 70 upper surface of silicon wafer
State.It is surveyed in school stage and mask registration stage specifically, being surveyed between initial phase, volume production between school stage, volume production, control
Silicon wafer stage controls the fluid injection flow of vertical liquid feeding channel 21 while Z-direction moves, i.e., when silicon wafer stage is led in the movement of Z-direction
When causing gap " GAP " variation between 60 lower surface of immersion liquid limiting mechanism and 70 upper surface of silicon wafer, flow controller 30 is controlled in time and is adjusted
Save the synchronous variation of fluid injection flow of vertical liquid feeding channel 21, " GAP " when increasing vertical fluid injection flow increase in real time, " GAP " reduces
Shi Chuizhi fluid injection flow reduces in real time, i.e., vertical fluid injection flow is with gap " GAP " between submergence head lower surface and silicon wafer upper surface
Increase and increase, vertical supply flow rate reduces with the reduction in gap " GAP " between head lower surface and silicon wafer upper surface is submerged, thus
Realization compensates the variation of power between immersion liquid limiting mechanism 60 and silicon wafer stage, to reduce between immersion liquid limiting mechanism 60 and silicon wafer stage
The fluctuation of power is conducive to reduce silicon wafer stress deformation and lithographic equipment focusing error.
It controls 60 lower surface of immersion liquid limiting mechanism and is in constant with the immersion liquid flowing pressure in the gap of 70 upper surface of silicon wafer
The principle of state is as follows:
If the density for the immersion liquid 90 filled in gap " GAP " between 70 upper surface of 60 lower surface of immersion liquid limiting mechanism and silicon wafer is
ρ, dynamic viscosity μ, silicon wafer 70 are with speed v0Movement, 60 lower surface of immersion liquid limiting mechanism between 70 upper surface of silicon wafer at a distance from
The height of " GAP " is h, and " GAP " width is l.
When then immersion liquid 90 is flowed, permanent, continuous, not compressible N-S equation is considered are as follows:
70 upper surface boundary of silicon wafer is using no slip boundary condition are as follows:
Wherein ,+v0Indicate gap between 70 direction of motion of silicon wafer and 7 upper surface of 60 lower surface of immersion liquid limiting mechanism and silicon wafer
The flow direction of immersion liquid 90 in " GAP " is identical ,-v0Indicate 70 direction of motion of silicon wafer and 60 lower surface of immersion liquid limiting mechanism and silicon
The flow direction of immersion liquid 90 between 70 upper surface of piece in gap " GAP " is opposite.
The speed point of the immersion liquid 90 between 70 upper surface of 60 lower surface of immersion liquid limiting mechanism and silicon wafer in gap " GAP " can be obtained
Cloth are as follows:
If the Zhou Changwei B of 90 flow field of immersion liquid periphery, can be obtained between 70 upper surface of 60 lower surface of immersion liquid limiting mechanism and silicon wafer
Flow q in gap " GAP "vAre as follows:
So as to the average speed of immersion liquid 90 between 70 upper surface of 60 lower surface of immersion liquid limiting mechanism and silicon wafer in gap " GAP "
Spend v:
If not considering the movement of silicon wafer 70,
Wherein, pressure is flowed in immersion liquid of the Δ p between 70 upper surface of 60 lower surface of immersion liquid limiting mechanism and silicon wafer in gap " GAP "
Power, dynamic viscosity is μ in formula, " GAP " width l is definite value, if immersion liquid speed v is remained unchanged, the variation of h directly results in Δ p
Fluctuation, therefore according to the height adjustment immersion liquid speed v of " GAP ", so that immersion liquid flowing pressure Δ p be made to be in steady state.
It is important to note that compensation way of the present invention and it is discrete to carry out vertical fluid injection flow-compensated, and
It is selectively to be compensated in real time according to the size of 70 location variation of work stage.It as shown in Figure 7a, is work stage 70
Location variation only can select to compensate when being more than 10 μm to 70 location variation of work stage, such as Fig. 7 b institute according to demand
Show；Also it can select to compensate when being more than 5 μm to work stage location variation, as shown in Figure 7 c according to demand.In short, can be right
The compensation of real-time perfoming selectivity when 70 location variation of work stage is more than certain particular value.
Embodiment 2
As shown in figure 8, unlike the first embodiment, the fluid injection primary flow path 25 is equipped at least three, every fluid injection
Primary flow path 25 is equipped with a flow controller 30.As shown in the figure, three fluid injection primary flow paths 25a, 25b, 25c respectively correspond flow
Immersion liquid 90 in controller 30a, 30b, 30c, three fluid injection primary flow paths 25a, 25b, 25c is collected in vertical liquid feeding channel 21,
When gap " GAP " changes silicon wafer stage between the movement of Z-direction leads to 70 upper surface of 60 lower surface of immersion liquid limiting mechanism and silicon wafer,
Fluid injection flow in vertical liquid feeding channel 21 is adjusted by one or more of flow controller 30a, 30b, 30c,
Vertical fluid injection flow increases in real time when " GAP " increases, " GAP " when reducing vertical fluid injection flow reduce in real time, i.e., vertical fluid injection stream
Amount increases with submergence head lower surface and the increase of gap " GAP " between silicon wafer upper surface, vertical supply flow rate is with submergence head following table
The reduction of gap " GAP " between face and silicon wafer upper surface and reduce, thus realize to power between immersion liquid limiting mechanism 60 and silicon wafer stage
Variation compensates, to reduce the fluctuation of power between immersion liquid limiting mechanism 60 and silicon wafer stage, be conducive to reduce silicon wafer stress deformation and
Lithographic equipment focusing error.
In conclusion liquid feed apparatus of immersion provided by the invention and method, which includes liquid supply equipment 10 and the confession
The horizontal liquid feeding channel 20 and vertical liquid feeding channel 21, the flow control on the vertical liquid feeding channel 21 that liquid equipment 10 connects
Device 30 processed, the feed flow flow control system 40 being connect with the flow controller 30, and with the feed flow flow control system
40 and silicon wafer stage kinetic control system 50 connect control system, the horizontal liquid feeding channel 20 and vertical liquid feeding channel 21 are set to
In immersion liquid limiting mechanism 60.Pass through the control system connecting with feed flow flow control system 40 and silicon wafer stage kinetic control system 50
System adjusts feed flow flow control system 40 in real time according to silicon wafer stage Motion trajectory information control flow amount controller 30 vertical
Immersion liquid flow in liquid feeding channel 21, compensates the variation of power between immersion liquid limiting mechanism 60 and silicon wafer stage, limits immersion liquid
Immersion liquid flowing pressure in the gap of 60 lower surface of mechanism and 70 upper surface of silicon wafer is in steady state, effectively prevents silicon wafer 70
Stress deformation reduces lithographic equipment focusing error, improves the performance of exposure accuracy and litho machine.
Although embodiments of the present invention are illustrated in specification, these embodiments are intended only as prompting,
It should not limit protection scope of the present invention.It is equal that various omission, substitution, and alteration are carried out without departing from the spirit and scope of the present invention
It should be included within the scope of the present invention.
Claims (11)
1. a kind of liquid feed apparatus of immersion, which is characterized in that logical including liquid supply equipment, the horizontal feed flow being connect with the liquid supply equipment
Road and vertical liquid feeding channel, the flow controller between the liquid supply equipment and vertical liquid feeding channel and the flow control
The feed flow flow control system of device connection processed, and connect with the feed flow flow control system and silicon wafer stage kinetic control system
Control system, the horizontal liquid feeding channel and vertical liquid feeding channel be set in immersion liquid limiting mechanism, the feed flow flow control
System controls institute according to the vertical height change in the gap between the silicon wafer upper surface being arranged on the silicon wafer stage and liquid supply equipment
State the immersion liquid flow in vertical liquid feeding channel；The control system includes complete machine control system and synchronous control system, described whole
Machine control system sends silicon wafer stage Motion trajectory letter to the feed flow flow control system and silicon wafer stage kinetic control system
Breath, the synchronous control system send synchronously control timing to the feed flow flow control system and silicon wafer stage kinetic control system
Information.
2. liquid feed apparatus of immersion according to claim 1, which is characterized in that the liquid supply equipment includes and the level supplies
Vertical fluid injection unit liquid channel attached horizontal fluid injection unit and connect with the vertical liquid feeding channel.
3. liquid feed apparatus of immersion according to claim 2, which is characterized in that the vertical fluid injection unit and the vertical confession
It is connected between liquid channel by fluid injection primary flow path, the flow controller is set in the fluid injection primary flow path.
4. liquid feed apparatus of immersion according to claim 3, which is characterized in that the fluid injection primary flow path is equipped at least three,
Every fluid injection primary flow path is equipped with a flow controller.
5. liquid feed apparatus of immersion according to claim 1, which is characterized in that the horizontal liquid feeding channel level is set to described
The top of immersion liquid limiting mechanism.
6. liquid feed apparatus of immersion according to claim 5, which is characterized in that further include being located in the immersion liquid limiting mechanism
And the liquid outlet channel being oppositely arranged with the horizontal liquid feeding channel.
7. liquid feed apparatus of immersion according to claim 1, which is characterized in that further include that air supply channel and gas-liquid recycling are logical
Road, the outlet of the vertical liquid feeding channel, gas-liquid recovery approach and air supply channel is along the bottom of the immersion liquid limiting mechanism by interior
To being arranged successively outside.
8. liquid feed apparatus of immersion according to claim 1, which is characterized in that be equipped with the in the feed flow flow control system
One computing unit, the silicon wafer stage kinetic control system is interior to be equipped with the second computing unit.
9. a kind of immersion liquid supply method, which comprises the following steps:
S1: immersion liquid is injected into immersion liquid limiting mechanism by horizontal liquid feeding channel and vertical liquid feeding channel；
S2: forming the gas curtain to immersion liquid sealing by air supply channel, right respectively by liquid outlet channel and gas-liquid recovery approach
Immersion liquid and gas-liquid mixture are recycled；
S3: control system control silicon wafer stage kinetic control system drives silicon wafer stage to move along the track of planning, while controlling flow
Controller adjusts the immersion liquid flow in vertical liquid feeding channel according to the planned trajectory of silicon wafer stage, make immersion liquid limiting mechanism lower surface with
Immersion liquid flowing pressure in the gap of silicon wafer upper surface is in steady state.
10. immersion liquid supply method according to claim 9, which is characterized in that in the step S3, complete machine control system to
The feed flow flow control system and silicon wafer stage kinetic control system send silicon wafer stage Motion trajectory information, silicon wafer stage movement
Coordinate information specific in silicon wafer stage Motion trajectory is converted silicon wafer stage movement by the second computing unit in control system
The executable order of executive component, drives silicon wafer stage to execute specific athletic performance；In the feed flow flow control system
Coordinate information specific in silicon wafer stage Motion trajectory is converted the executable order of flow controller, control by one computing unit
Make the immersion liquid flow in vertical liquid feeding channel.
11. immersion liquid supply method according to claim 10, which is characterized in that in the step S3, synchronous control system
Synchronously control timing information is sent to the feed flow flow control system and silicon wafer stage kinetic control system, makes the movement of silicon wafer stage
It is synchronous with the immersion liquid flow adjustment holding in vertical liquid feeding channel, make the gap of immersion liquid limiting mechanism lower surface Yu silicon wafer upper surface
Interior immersion liquid flowing pressure is in steady state.
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| CN112650028B (en) * | 2020-12-25 | 2024-02-09 | 浙江启尔机电技术有限公司 | Immersion liquid supply recovery device for improving pressure characteristic of immersion flow field |
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| TW200813645A (en) * | 2006-06-30 | 2008-03-16 | Canon Kk | Exposure apparatus and device manufacturing method |
| EP2495613B1 (en) * | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
| CN104950586A (en) * | 2014-03-25 | 2015-09-30 | 上海微电子装备有限公司 | Immersion liquid limiting mechanism |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2495613B1 (en) * | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
| TW200813645A (en) * | 2006-06-30 | 2008-03-16 | Canon Kk | Exposure apparatus and device manufacturing method |
| CN104950586A (en) * | 2014-03-25 | 2015-09-30 | 上海微电子装备有限公司 | Immersion liquid limiting mechanism |
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