CN108020572B - 碳纳米管的表征方法 - Google Patents

碳纳米管的表征方法 Download PDF

Info

Publication number
CN108020572B
CN108020572B CN201610933463.2A CN201610933463A CN108020572B CN 108020572 B CN108020572 B CN 108020572B CN 201610933463 A CN201610933463 A CN 201610933463A CN 108020572 B CN108020572 B CN 108020572B
Authority
CN
China
Prior art keywords
carbon nanotubes
carbon nanotube
carbon
nanotube structure
characterizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610933463.2A
Other languages
English (en)
Other versions
CN108020572A (zh
Inventor
李东琦
魏洋
姜开利
范守善
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Hongfujin Precision Industry Shenzhen Co Ltd
Original Assignee
Tsinghua University
Hongfujin Precision Industry Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsinghua University, Hongfujin Precision Industry Shenzhen Co Ltd filed Critical Tsinghua University
Priority to CN201610933463.2A priority Critical patent/CN108020572B/zh
Priority to TW105138577A priority patent/TWI656092B/zh
Priority to US15/661,061 priority patent/US10020191B2/en
Publication of CN108020572A publication Critical patent/CN108020572A/zh
Application granted granted Critical
Publication of CN108020572B publication Critical patent/CN108020572B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02606—Nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/009—Characterizing nanostructures, i.e. measuring and identifying electrical or mechanical constants
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0061—Methods for manipulating nanostructures
    • B82B3/0071—Sorting nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/08—Aligned nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/852—Manufacture, treatment, or detection of nanostructure with scanning probe for detection of specific nanostructure sample or nanostructure-related property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/88—Manufacture, treatment, or detection of nanostructure with arrangement, process, or apparatus for testing
    • Y10S977/881—Microscopy or spectroscopy, e.g. sem, tem

Abstract

一种碳纳米管表征方法，其包括以下步骤：提供一导电基底，该导电基底上设置一层绝缘层；在所述绝缘层上设置一碳纳米管结构；将碳纳米管结构放置在扫描电镜下，调整扫描电镜的加速电压为5～20千伏，驻留时间为6～20微秒，放大倍数为1万～10万倍，采用扫描电镜对所述碳纳米管结构拍摄照片；获得碳纳米管结构的照片，碳纳米管结构中的碳纳米管分布在照片衬底上。

Description

碳纳米管的表征方法
技术领域
本发明涉及一种碳纳米管的表征方法，尤其设置一种采用扫描电镜对碳纳米管进行表征的方法。
背景技术
单壁碳纳米管是一种非常具有研究潜能的纳米材料。基于其纳米级的尺寸以及特殊的结构，单壁碳纳米管具有良好的电学性能、光电性能以及半导体型能。单壁碳纳米管可以分为金属型和半导体型两种类型。由于这两种碳纳米管的应用范围不同，需要对其进行区分。随着碳纳米管的应用越来越广泛，如何区分金属型碳纳米管和半导体型碳纳米管成为研究的热点。
传统的常用的区分金属型碳纳米管和半导体型碳纳米管的方法为拉曼光谱法或者电学测量的方法。但是由于操作复杂导致效率较低。扫描电镜因其具有较高的辨别效率，被越来越多的人用来表征碳纳米管。请参见图1及图2，传统的采用扫描电镜区表征碳纳米管的方法中，为了获得清晰而且对比度高的照片，采用较低的(1千伏左右)的加速电压。采用传统表征方法获得的碳纳米管照片中，碳纳米管的导电性能与照片中的颜色有关，颜色越浅，导电性能越好，但是，碳纳米管的颜色都是比衬底的颜色浅。当照片中同时存在金属型碳纳米管和半导体型碳纳米管时，对于处于中间色的碳纳米管，如灰色的碳纳米管，在判断这些碳纳米管的种类时，常会发生错误。因此，传统的扫描电镜表征碳纳米管的方法在辨识碳纳米管种类时，准确度不够高，常常会出现误判或者难以判断。而且，由于无论金属型还是半导体型的碳纳米管，在照片中显示的颜色均比衬底颜色浅，当照片中只存在一种类型的碳纳米管时，难以判断照片中的碳纳米管是金属型还是半导体型。
发明内容
有鉴于此，确有必要提供一种碳纳米管表征方法，该碳纳米管表征方法可以克服以上缺点。
一种碳纳米管表征方法，其包括以下步骤：提供一导电基底，该导电基底上设置一层绝缘层；在所述绝缘层上设置一碳纳米管结构；将碳纳米管结构放置在扫描电镜下，调整扫描电镜的加速电压为5～20千伏，驻留时间为6～20微秒，放大倍数为1万～10万倍，采用扫描电镜对所述碳纳米管结构拍摄照片；获得碳纳米管结构的照片，碳纳米管结构中的碳纳米管分布在照片衬底上。
相较于现有技术，本发明所提供的碳纳米管表征方法中，扫描电镜的加速电压远高于传统的碳纳米管的表征方法中扫描电镜的加速电压，因此获得的碳纳米管结构的照片中，金属型碳纳米管比衬底的颜色浅，半导体型的碳纳米管比衬底的颜色深，因此，可以方便的判断出碳纳米管的种类。
附图说明
图1为现有技术中，采用扫描电镜表征碳纳米管获得的照片。
图2为图1的示意图。
图3为本发明实施例提供的碳纳米管表征方法的流程示意图。
图4为本发明实施例提供的碳纳米管的表征方法所获得的碳纳米管的照片。
图5为图4的示意图。
主要元件符号说明
无
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
以下将结合附图对本发明的提供的碳纳米管的表征方法进一步的详细说明。
请参阅图3，本发明第一实施例提供碳纳米管的表征方法，其包括以下步骤：
S1：提供一导电基底，该导电基底上设置一层绝缘层；
S2：在所述绝缘层上设置一碳纳米管结构；
S3：将碳纳米管结构放置在扫描电镜下，调整扫描电镜的加速电压为5～20千伏，驻留时间为6～20微秒，放大倍数为1万～10万倍，采用扫描电镜对所述碳纳米管结构拍摄照片；以及
S4：获得碳纳米管结构的照片，碳纳米管结构中的碳纳米管分布在照片衬底上。
在步骤S1中，所述导电基底的材料不限，只要是导电材料即可，可以为金属、导电有机物或掺杂的导电材料。本实施例中，选用掺杂的硅作为导电基底材料。所述绝缘层的材料为绝缘材料，可以为氧化物或者高分子材料。本实施例中，选用氧化硅材料。所述绝缘层的厚度为50-300纳米。
在步骤S2中，碳纳米管结构包括一根碳纳米管或者多根碳纳米管。碳纳米管可以平行于绝缘层的表面。当碳纳米管结构包括多根碳纳米管时，该多根碳纳米管可以包括金属型碳纳米管和/或半导体型碳纳米管。本实施例中，碳纳米管结构包括多根金属型碳纳米管和半导体型碳纳米管。
在步骤S3中，优选地，加速电压为15-20千伏，驻留时间为10-20微秒。本实施例中，加速电压为10千伏，驻留时间为20微秒，放大倍数为2万倍。
在步骤S4中，获得碳纳米管结构的照片如图4所示，其示意图如图5所示。图3中包括衬底以及形成在衬底上的碳纳米管的影像。从图4/图5可以看出，一部分碳纳米管的颜色比衬底的颜色浅，一部分碳纳米管的颜色比衬底的颜色深。比衬底颜色浅的碳纳米管为金属型碳纳米管；比衬底颜色深的碳纳米管为半导体型碳纳米管。
对比现有技术中采用扫描电镜表征碳纳米管的方法所获得的碳纳米管的照片(图1)和采用本发明实施例碳纳米管的表征方法所获得的碳纳米管照片(图4)，可以得出以下区别：
第一，采用传统表征方法获得的碳纳米管照片中，碳纳米管的导电性能与照片中的颜色有关，颜色越浅，导电性能越好，但是，碳纳米管的颜色都是比衬底的颜色浅。当照片中同时存在金属型碳纳米管和半导体型碳纳米管时，对于处于中间色的碳纳米管，如灰色的碳纳米管，在判断这些碳纳米管的种类时，常会发生错误。因此，传统的扫描电镜表征碳纳米管的方法在辨识碳纳米管种类时，准确度不够高，常常会出现误判或者难以判断。而采用本发明实施例所获得的碳纳米管照片中，金属型碳纳米管比衬底的颜色浅，半导体型的碳纳米管比衬底的颜色深，因此在判断碳纳米管属于金属型还是半导体型时，便可以一目了然。
第二，采用传统表征方法获得的碳纳米管照片中，由于无论金属型还是半导体型的碳纳米管，在照片中显示的颜色均比衬底颜色浅，当照片中只存在一种类型的碳纳米管时，难以判断照片中的碳纳米管是金属型还是半导体型。而采用本发明所提供的碳纳米管表征方法所获得的碳纳米管照片中，金属型碳纳米管比衬底的颜色浅，半导体型的碳纳米管比衬底的颜色深，即使照片中只存在一种类型的碳纳米管，也可以快速判断其种类。
第三，相对于图4，图1的对比度更高，视觉上更容易观察碳纳米管，而且照片比较美观，而本发明实施例所获得的照片图3中，分辨率相对较低，照片也不够美观，所以现有技术中均是采用低加速电压对碳纳米管进行表征。但是现有技术中碳纳米管的表征方法所获得的照片难以准确地判断碳纳米管的种类。本发明提供的碳纳米管的表征方法，能够快速而准确的判断碳纳米管的种类，克服了技术偏见。
第四，相对于图1，图4中碳纳米管成像的宽度较小，因此，对于密度较高的多个碳纳米管，本发明所提供的碳纳米管的表征方法更加适合。
另外，本领域技术人员还可在本发明精神内做其他变化，当然，这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (7)

1.一种碳纳米管的表征方法，其包括以下步骤：
提供一导电基底，该导电基底上设置一层绝缘层，所述绝缘层的材料为氧化物或者高分子材料，所述绝缘层的厚度为50-300纳米；
在所述绝缘层上设置一碳纳米管结构；
将碳纳米管结构放置在扫描电镜下，调整扫描电镜的加速电压为5-20千伏，驻留时间为6-20微秒，放大倍数为1万-10万倍，采用扫描电镜对所述碳纳米管结构拍摄照片；以及
获得碳纳米管结构的照片，碳纳米管结构中的碳纳米管分布在照片衬底上，所述碳纳米管结构的照片中，比衬底颜色浅的碳纳米管为金属型碳纳米管；比衬底颜色深的碳纳米管为半导体型碳纳米管。
2.如权利要求1所述的碳纳米管的表征方法，其特征在于，所述导电基底的材料为金属、导电有机物或掺杂的导电材料。
3.如权利要求1所述的碳纳米管的表征方法，其特征在于，所述碳纳米管结构包括一根或多根碳纳米管。
4.如权利要求1所述的碳纳米管的表征方法，其特征在于，所述碳纳米管结构包括多根碳纳米管，该多根碳纳米管包括金属型碳纳米管和半导体型碳纳米管。
5.如权利要求4所述的碳纳米管的表征方法，其特征在于，所述多根碳纳管平行于绝缘层的表面。
6.如权利要求1所述的碳纳米管的表征方法，其特征在于，所述扫描电镜的加速电压为15-20千伏。
7.如权利要求1所述的碳纳米管的表征方法，其特征在于，所述驻留时间为10-20微秒。
CN201610933463.2A 2016-10-31 2016-10-31 碳纳米管的表征方法 Active CN108020572B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201610933463.2A CN108020572B (zh) 2016-10-31 2016-10-31 碳纳米管的表征方法
TW105138577A TWI656092B (zh) 2016-10-31 2016-11-24 奈米碳管的表徵方法
US15/661,061 US10020191B2 (en) 2016-10-31 2017-07-27 Method for characterizing carbon nanotubes by using scanning electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610933463.2A CN108020572B (zh) 2016-10-31 2016-10-31 碳纳米管的表征方法

Publications (2)

Publication Number Publication Date
CN108020572A CN108020572A (zh) 2018-05-11
CN108020572B true CN108020572B (zh) 2020-07-10

Family

ID=62021023

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610933463.2A Active CN108020572B (zh) 2016-10-31 2016-10-31 碳纳米管的表征方法

Country Status (3)

Country Link
US (1) US10020191B2 (zh)
CN (1) CN108020572B (zh)
TW (1) TWI656092B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106595512B (zh) * 2016-11-09 2017-09-29 华中科技大学 一种基于分形维数的碳纳米管分散状态的数值化表征方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7378075B2 (en) * 2002-03-25 2008-05-27 Mitsubishi Gas Chemical Company, Inc. Aligned carbon nanotube films and a process for producing them
US20050207964A1 (en) * 2004-03-22 2005-09-22 Dojin Kim Method for synthesizing carbon nanotubes
US20050255613A1 (en) * 2004-05-13 2005-11-17 Dojin Kim Manufacturing of field emission display device using carbon nanotubes
JP4871177B2 (ja) * 2006-03-28 2012-02-08 コリア インスティチュート オブ エナジー リサーチ 超音波振動方式を用いたカーボンナノチューブ合成方法とその装置
JP4427034B2 (ja) * 2006-04-28 2010-03-03 日信工業株式会社 炭素繊維複合材料
TW200808134A (en) * 2006-07-28 2008-02-01 Ushio Electric Inc Light source device for producing extreme ultraviolet radiation and method of generating extreme ultraviolet radiation
KR100839613B1 (ko) * 2006-09-11 2008-06-19 주식회사 씨앤테크 카본나노튜브를 활용한 복합소결재료 및 그 제조방법
JP4873413B2 (ja) * 2006-11-15 2012-02-08 ニッタ株式会社 多層カーボンナノチューブの集合構造
CN101009222A (zh) * 2007-01-26 2007-08-01 北京大学 一种制备碳纳米管电子器件的方法
CN101308889B (zh) * 2007-05-16 2010-08-18 中国科学院半导体研究所 提高半导体型碳纳米管发光效率的方法
CN101734645B (zh) * 2008-11-14 2015-09-30 清华大学 碳纳米管膜
DE102010005456A1 (de) * 2010-01-22 2011-07-28 Daimler AG, 70327 Sandwichbauteil und Verfahren zu dessen Herstellung
CN102019224B (zh) * 2010-09-29 2013-01-16 中国科学院苏州纳米技术与纳米仿生研究所 金属性和半导体性碳纳米管的分离方法
CN103187573B (zh) * 2011-12-28 2016-01-20 清华大学 锂离子电池电极
GB201220691D0 (en) * 2012-11-16 2013-01-02 Univ Bath A catalyst
CN103482607A (zh) * 2013-10-08 2014-01-01 上海理工大学 一种半导体型碳纳米管的富集方法
US9550907B2 (en) * 2015-02-27 2017-01-24 Gates Corporation Carbon nanostructure preblends and their applications

Also Published As

Publication number Publication date
US10020191B2 (en) 2018-07-10
CN108020572A (zh) 2018-05-11
TWI656092B (zh) 2019-04-11
US20180118563A1 (en) 2018-05-03
TW201817673A (zh) 2018-05-16

Similar Documents

Publication Publication Date Title
Ji et al. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
US7491934B2 (en) SEM technique for imaging and measuring electronic transport in nanocomposites based on electric field induced contrast
CN108020573B (zh) 区分碳纳米管类型的方法
US9960354B1 (en) Method for making thin film transistor
Popov et al. Local current–voltage estimation and characteristization based on field emission image processing of large-area field emitters
Fiorenza et al. Conductive atomic force microscopy studies of thin SiO2 layer degradation
US10121564B2 (en) Method for making transparent conductive layer
CN108020572B (zh) 碳纳米管的表征方法
Dyck et al. Contrast mechanisms in secondary electron e-beam-induced current (SEEBIC) imaging
US9985212B2 (en) Method for making semiconducting layer
Gloystein et al. Empty Valence‐Band Pocket in p‐Type Cu2O (111) Probed with Scanning Tunneling Spectroscopy
Pandey et al. Noninvasive subsurface electrical probe for encapsulated layers in van der waals heterostructures
Imtiaz et al. Imaging the pn junction in a gallium nitride nanowire with a scanning microwave microscope
Song et al. A statistical method for determining intrinsic electronic transport properties of self-assembled alkanethiol monolayer devices
Gustafsson et al. Locating nanowire heterostructures by electron beam induced current
Arinero et al. Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02/Si films: Investigation of the best experimental conditions with a conductive-atomic force microscope
Polspoel et al. Physical degradation of gate dielectrics induced by local electrical stress using conductive atomic force microscopy
Oberbeck et al. Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy
Xie et al. Spatially resolved diagnosis of stress-induced breakdown in oxide dots by in situ conducting atomic force microscopy
Aguilera et al. Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics
Liu et al. Measuring the electrical characteristics of individual junctions in the SnO2 capped ZnO nanowire arrays on Zn substrate
Terada et al. Electronic structure of a polymer nanowire on H-terminated Si (100)
Henrichsen et al. Submicron organic nanofiber devices with different anode-cathode materials: A simple approach
Grunbaum et al. Secondary electron emission contrast of quantum wells in GaAs pin junctions

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant