CN108000058B - Manufacturing method of high-cleanliness flow-limiting sealing gasket - Google Patents
Manufacturing method of high-cleanliness flow-limiting sealing gasket Download PDFInfo
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Abstract
The invention relates to the field of gas circuit systems, in particular to a manufacturing method of a high-cleanness flow-limiting sealing gasket. The method mainly comprises the following steps: (1) processing a metal plate to generate a metal wafer; (2) processing a micropore in the center of the wafer; (3) annealing and softening the wafer; (4) carrying out electrolytic polishing on the wafer; (5) passivating the wafer; (6) and cleaning and drying the wafer, and performing plastic package and preservation. The high-cleanness flow-limiting sealing gasket can be stored for a long time and is convenient to use, has a good sealing effect and strong high-temperature resistance and corrosion resistance, can be used for sealing special gas media, can obtain extremely low gas flow, meets special flow requirements, can obtain a more compact gas path system, and reduces the installation and use cost. The invention can effectively promote the development and application of the high-cleanness flow-limiting sealing gasket and has important significance for developing gas circuit systems with related special purposes.
Description
Technical Field
the invention relates to the field of gas circuit systems, in particular to a manufacturing method of a high-cleanness flow-limiting sealing gasket which is used for sealing a high-cleanness gas circuit joint and can limit gas flow.
Background
the gas path system is very common in all the links of industrial and agricultural production and scientific research and development. After 90 years of 20 th century, with the rapid development of high and new technologies in the world, the demand of the computer industry for large-scale integrated circuits and the demand of liquid crystal displays have increased greatly; with the development of new energy sources, the production of polycrystalline silicon solar cells and thin film solar cells is also greatly developed; in addition, new types of electric light sources, optoelectronic semiconductor devices, and optical fiber communication devices have been developed rapidly, and a large amount of high-purity gas is required in the production process of the above-mentioned high-quality products to manufacture various devices with reliable performance. In the process of using high-purity gas, a high-purity gas piping system satisfying the respective requirements is indispensable. The functions of these gas pipeline systems are mainly to realize the functions of gas on-off, flow control, heating, cooling, non-return, filtration, flow limiting and the like. To achieve these functions, various components are required to be added to the gas piping system to achieve the related functions, such as: the on-off of the gas requires a diaphragm valve, the flow control requires a mass flow controller, the non-return requires a check valve, the flow limiting requires a flow restrictor, etc. The position of the connection joints between these components is required to ensure reliable sealing effect to prevent gas leakage, because the above-mentioned applications may involve a large amount of toxic, harmful, flammable and explosive gases, which, once leaked, not only causes economic loss, but also causes accidents of casualties.
at present, the most widely used joints for the applications are end face seal type joints, a sealing gasket is clamped between the joints, and the metal gasket is pressed by interlocking of internal threads and external threads to generate certain deformation of the gasket, so that the sealing effect is achieved. However, there is no micro-pore flow restrictor with a pore diameter of less than 0.1mm in the market at present, which cannot generate gas with a micro flow rate, and in some cases, the strict requirement on the size of the space can also result in that the existing flow restrictor cannot be used. Therefore, there is a need to develop a high-cleanliness gasket having both sealing and micro-hole flow-limiting functions, which can simplify the assembly process of the gas circuit system, generate a micro-flow gas, achieve a more compact effect, and reduce the production cost of the related gas circuit.
Disclosure of Invention
The invention aims to provide a manufacturing method of a high-cleanness flow-limiting sealing gasket for sealing a high-cleanness gas path joint and simultaneously realizing the purpose of limiting the gas flow.
the technical scheme of the invention is as follows:
a manufacturing method of a high-cleanness flow-limiting sealing gasket comprises the following specific operation steps:
(1) processing a metal plate with the plate thickness of 1-2 mm by a stamping or laser cutting mode to generate a wafer with the outer diameter of 12-20 mm;
(2) adopting a deep micropore electric spark machine tool to perform forming processing on micropores with the diameter of 0.05-0.1 mm on the center of the wafer;
(3) After the micropore machining and forming are finished, annealing and softening treatment is carried out on the micropore machining and forming;
(4) carrying out electrolytic polishing on the wafer with the micropores after the heat treatment;
(5) Passivating the wafer after electrolytic polishing;
(6) And ultrasonically cleaning the passivated wafer by using deionized water to remove the passivation solution, drying the wafer in a hundred-grade dust-free clean room, and independently packaging each wafer by vacuum plastic.
The manufacturing method of the high-cleanness flow-limiting sealing gasket is characterized in that the metal plate is made of 304/304L stainless steel plate, 316/316L stainless steel plate, T2/T1 red copper plate or 1050/1060/1070 pure aluminum plate.
in the manufacturing method of the high-cleanness flow-limiting sealing gasket, in the step (2), when micropore processing is carried out, the working solution used for wafers made of 304/304L stainless steel, 316/316L stainless steel and T1/T2 red copper is deionized water with the insulation strength of 15-20M omega cm; for the wafer made of 1050/1060/1070 pure aluminum, the used working fluid is kerosene; for wafers made of 304/304L stainless steel and 316/316L stainless steel, the used electrode material is tungsten wires, and the diameter of each tungsten wire is 0.03-0.08 mm; for the wafer made of T1/T2 red copper, the used electrode material is molybdenum wire with the diameter of 0.03-0.08 mm; for the wafer made of 1050/1060/1070 pure aluminum, the used electrode material is brass wire with the diameter of 0.03-0.08 mm.
In the step (2), the peak current adopted for micropore processing is 0.2-0.3A, the current pulse width is 2-4 mus, the pulse time is 90-110 mus, the processing capacitance is 3000-3500 pF, the distance between an electrode and a workpiece is controlled to be 40-55 mu m, the vibration amplitude of the processing electrode is 4-6 x 10-6m, the vibration frequency is 900-1100 Hz, and the rotating speed is 8000-12000 rpm.
In the step (3), when annealing and softening treatment is carried out, an electric heating device used is a tubular high-temperature furnace, argon-hydrogen mixed gas containing 8-12 vol% of hydrogen is introduced, for wafers made of 304/304L stainless steel and 316/316L stainless steel, the heat treatment temperature is 1000-1100 ℃, the heat preservation time is 8-20 minutes, and water cooling is carried out rapidly; for the wafer made of T1/T2 red copper, the heat treatment temperature is 400-500 ℃, the heat preservation time is 10-20 minutes, and water cooling is carried out rapidly; for a wafer made of 1050/1060/1070 pure aluminum, the heat treatment temperature is 360-420 ℃, the heat preservation time is 30-40 minutes, and water cooling is carried out rapidly.
in the manufacturing method of the high-cleanness flow-limiting sealing gasket, in the step (4), during electrolytic polishing, the formula of the electrolytic polishing solution used for the wafer made of 304/304L stainless steel is as follows: 140-180 g/L of phosphoric acid, 10-30 g/L of hexamethylenetetramine, 70-90 mL/L of sulfuric acid, 40-60 mL/L of glycerol, 5-15 g/L of o-benzoylsulfonimide and the balance of water; the voltage of electrolytic polishing is 18-22V, the time of electrolytic polishing is 5-7 minutes, and the temperature of electrolytic polishing is 55-65 ℃; for a disc made of 316/316L stainless steel, the formula of the used electrolytic polishing solution is as follows: 190-210 g/L of perchloric acid and the balance of glacial acetic acid; the voltage of electrolytic polishing is 25-35V, the time of electrolytic polishing is 7-9 minutes, and the temperature of electrolytic polishing is 75-85 ℃; for the wafer made of T1/T2 red copper, the formula of the used electrolytic polishing solution is as follows: 820-830 mL/L of orthophosphoric acid and the balance of deionized water; the voltage of electrolytic polishing is 1-3V, the time is 35-45 minutes, and the temperature of electrolytic polishing is 35-45 ℃; for a wafer made of 1050/1060/1070 pure aluminum, the formula of the used electrolytic polishing solution is as follows: perchloric acid 90-110 mL/L, and the balance of absolute ethyl alcohol; the voltage of the electrolytic polishing is 29-31V, the time of the electrolytic polishing is 25-35 seconds, and the temperature of the electrolytic polishing is 35-45 ℃.
in the manufacturing method of the high-cleanliness flow-limiting sealing gasket, in the step (5), during passivation treatment, a formula of a passivation solution used for a wafer made of 304/304L stainless steel is as follows: 8-12 ml/L of sulfuric acid, 15-25 g/L of potassium nitrate and the balance of water; the passivation time is 18-22 minutes, and the passivation temperature is 80-85 ℃; for a disc made of 316/316L stainless steel, the formula of the used passivation solution is as follows: 340-360 mL/L of nitric acid and the balance of deionized water; the passivation time is 25-35 minutes, and the passivation temperature is 45-55 ℃; for the wafer made of T1/T2 red copper, the formula of the used passivation solution is as follows: 15-17 ml/L of sulfuric acid, 90-110 g/L of chromium trioxide and the balance of water; the passivation time is 15-25 seconds, and the passivation temperature is 25-35 ℃; for a wafer made of 1050/1060/1070 pure aluminum, the formula of the used passivation solution is as follows: 35-37 ml/L of sulfuric acid, 190-210 g/L of chromium trioxide and the balance of water; the passivation time is 25-35 seconds, and the passivation temperature is 25-30 ℃.
The invention has the following advantages and beneficial effects:
(1) the method has the advantages of less metal materials, simple and efficient process;
(2) the high-cleanness flow-limiting sealing gasket manufactured by the invention can be stably stored for a long time and is convenient for field use;
(3) The high-cleanness flow-limiting sealing gasket manufactured by the invention can obtain very low leakage rate (less than 6 multiplied by 10-12std cm3/s) at the joint;
(4) The high-cleanness flow-limiting sealing gasket manufactured by the invention has good corrosion resistance on the surface, so the sealing gasket can be used for sealing a joint of a corrosive gas pipeline;
(5) the high-cleanness flow-limiting sealing gasket manufactured by the invention can bear the high temperature of more than 200 ℃, so the high-cleanness flow-limiting sealing gasket can be used for sealing the joint of a high-temperature gas pipeline;
(6) The high-cleanness flow-limiting sealing gasket manufactured by the invention can obtain extremely low gas flow and can be used for special flow requirements;
(7) The high-cleanness flow-limiting sealing gasket manufactured by the invention has a very compact size structure, can obtain a more compact gas circuit system, reduces the installation and use cost, can simultaneously realize the effects of sealing and flow limiting, can greatly reduce the size of the related gas circuit system, and reduces the installation and use cost.
Drawings
FIG. 1 is a schematic flow chart of the operation of the present invention.
FIG. 2 is a schematic diagram of the structure of the high-cleanness flow-limiting sealing gasket of the invention.
Detailed Description
as shown in fig. 1, in the specific implementation process, the manufacturing method of the high-cleanness flow-limiting sealing gasket of the present invention includes the following steps:
(1) the method is characterized in that an 304/304L stainless steel plate, a 316/316L stainless steel plate, a T1/T2 copper plate or a 1050/1060/1070 pure aluminum plate is adopted, the plate thickness is 1-2 mm, and a metal wafer with the outer diameter of 12-20 mm is processed and generated in a stamping or laser cutting mode.
(2) Adopting a deep micropore electric spark machine tool to carry out micropore forming processing with the diameter of 0.05-0.1 mm on the center of the wafer, wherein for the wafers made of 304/304L stainless steel, 316/316L stainless steel and T1/T2 red copper, the working solution used in the processing is deionized water with the insulating strength of 15-20M omega cm, and for the wafer made of 1050/1060/1070 pure aluminum, the working solution used in the processing is kerosene; for the wafers made of 304/304L stainless steel and 316/316L stainless steel, the electrode material used in the processing is tungsten wires with the diameter of 0.03-0.08 mm; for the wafer made of T1/T2 red copper, the electrode material used in the processing is molybdenum wire with the diameter of 0.03-0.08 mm; for a wafer made of 1050/1060/1070 pure aluminum, the electrode material used in the processing is brass wire with the diameter of 0.03-0.08 mm;
The peak current selected in the micropore forming process is 0.2-0.3A, the current pulse width is 2-4 mus, the pulse time is 90-110 mus, the processing capacitance is 3000-3500 pF, the distance between an electrode and a workpiece is controlled to be 40-55 mu m, the vibration amplitude of the processing electrode is 4-6 x 10 < -6 > m, the vibration frequency is 900-1100 Hz, and the rotating speed is 8000-12000 rpm.
(3) after the micropore machining and forming are finished, carrying out annealing softening treatment on the metal wafer with the hole, introducing argon-hydrogen mixed gas containing 8-12 vol% of hydrogen into the electric heating device which is a tubular high-temperature furnace, carrying out heat treatment on wafers made of 304/304L stainless steel and 316/316L stainless steel at the temperature of 1000-1100 ℃ for 8-20 minutes, and rapidly cooling by water; for the wafer made of T1/T2 red copper, the heat treatment temperature is 400-500 ℃, the heat preservation time is 10-20 minutes, and water cooling is carried out rapidly; for a wafer made of 1050/1060/1070 pure aluminum, the heat treatment temperature is 360-420 ℃, the heat preservation time is 30-40 minutes, and water cooling is carried out rapidly.
(4) Carrying out electrolytic polishing treatment on the wafer with micropores after heat treatment, wherein for the wafer made of 304/304L stainless steel, the formula of the electrolytic polishing solution is 140-180 g/L phosphoric acid, 10-30 g/L hexamethylenetetramine, 70-90 mL/L sulfuric acid (with the concentration of 98 wt%), 40-60 mL/L glycerol, 5-15 g/L o-benzoylsulfonimide and the balance of water; the voltage of electrolytic polishing is 18-22V, the time of electrolytic polishing is 5-7 minutes, and the temperature of electrolytic polishing is 55-65 ℃; for a wafer made of 316/316L stainless steel, the formula of the used electrolytic polishing solution is 190-210 g/L perchloric acid (with the concentration of 20 wt%) and 790-810 g/L glacial acetic acid; the voltage of electrolytic polishing is 25-35V, the time of electrolytic polishing is 7-9 minutes, and the temperature of electrolytic polishing is 75-85 ℃; for the wafer made of T1/T2 red copper, the formula of the electrolytic polishing solution is 820-830 mL/L orthophosphoric acid and 170-180 mL/L deionized water; the voltage of electrolytic polishing is 1-3V, the time is 35-45 minutes, and the temperature of electrolytic polishing is 35-45 ℃; for a wafer made of 1050/1060/1070 pure aluminum, the formula of the used electrolytic polishing solution is 90-110 mL/L perchloric acid (with the concentration of 20 wt%) and 890-910 mL/L absolute ethyl alcohol; the voltage of the electrolytic polishing is 29-31V, the time of the electrolytic polishing is 25-35 seconds, and the temperature of the electrolytic polishing is 35-45 ℃.
(5) Passivating the electropolished perforated metal wafer, wherein for the wafer made of 304/304L stainless steel, the formula of the used passivation solution comprises 8-12 ml/L of sulfuric acid (with the concentration of 98 wt%), 15-25 g/L of potassium nitrate and the balance of water; the passivation time is 18-22 minutes, and the passivation temperature is 80-85 ℃; for a round piece made of 316/316L stainless steel, the formula of the used passivation solution is 340-360 mL/L concentrated nitric acid (with the concentration of 68 wt%) and 640-660 mL/L deionized water; the passivation time is 25-35 minutes, and the passivation temperature is 45-55 ℃; for the wafer made of T1/T2 red copper, the formula of the used passivation solution is 15-17 ml/L of sulfuric acid (with the concentration of 98 wt%), 90-110 g/L of chromium trioxide (with the purity of 99.5 wt%) and the balance of water; the passivation time is 15-25 seconds, and the passivation temperature is 25-35 ℃; for a wafer made of 1050/1060/1070 pure aluminum, the formula of the used passivation solution is 35-37 ml/L of sulfuric acid (with the concentration of 98 wt%), 190-210 g/L of chromium trioxide (with the purity of 99.5 wt%) and the balance of water; the passivation time is 25-35 seconds, and the passivation temperature is 25-30 ℃.
(6) And ultrasonically cleaning the passivated perforated metal wafer by using deionized water to remove the passivation solution, drying the metal wafer in a hundred-grade dust-free clean room, and independently vacuum-packaging each wafer by using plastic so as to realize good protection.
The present invention will be described in further detail below with reference to examples.
Example 1
in the embodiment, a 304L stainless steel plate with the plate thickness of 1mm is adopted, a wafer with the outer diameter of 12mm is processed and generated in a stamping mode, a deep micropore electric spark machine tool is adopted to carry out forming processing on micropores with the diameter of 0.1mm in the center of the wafer, working solution used in processing is deionized water with the insulation strength of 16 MOmega cm, electrode material used in processing is tungsten wire, and the diameter of the electrode material is 0.08 mm; the peak current selected in the micropore forming process is 0.25A, the current pulse width is 2 mus, the pulse time is 90 mus, the processing capacitance is 3000pF, the distance between the electrode and the workpiece is controlled at 40 um, the vibration amplitude of the processing electrode is 4 x 10-6m, the vibration frequency is 900Hz, and the rotating speed is 8000 rpm. After the micropore machining and forming is finished, annealing and softening treatment is carried out on the micropore, the used electric heating device is a tubular high-temperature furnace, argon-hydrogen mixed gas containing 10 vol% of hydrogen is introduced, the heat treatment temperature is 1000 ℃, the heat preservation time is 10 minutes, and water cooling is carried out rapidly. Then, carrying out electrolytic polishing on the wafer with micropores after heat treatment, wherein the formula of the electrolytic polishing solution is 160g/L of phosphoric acid, 20g/L of hexamethylenetetramine, 80mL/L of sulfuric acid (with the concentration of 98 wt%), 50mL/L of glycerol, 10g/L of o-benzoylsulfonimide and the balance of water; the voltage of the electrolytic polishing is 20V, the time of the electrolytic polishing is 6 minutes, and the temperature of the electrolytic polishing is 60 ℃. Then, passivating the wafer after electrolytic polishing, wherein the formula of the used passivation solution comprises 10ml/L of sulfuric acid (with the concentration of 98 wt%), 20g/L of potassium nitrate and the balance of water; the passivation time was 20 minutes and the passivation temperature was 80 ℃. And ultrasonically cleaning the passivated wafer by using deionized water to remove the passivation solution, drying the wafer in a hundred-grade dust-free clean room, and independently vacuum-packaging each wafer by using plastic so as to realize good protection.
example 2
A 316L stainless steel plate with the plate thickness of 1mm is adopted, a wafer with the outer diameter of 20mm is processed and generated in a laser cutting mode, a deep micropore electric spark machine tool is adopted to carry out forming processing on the center of the wafer with micropores with the diameter of 0.06mm, working solution used in processing is deionized water with the insulation strength of 18 MOmega cm, electrode material used in processing is tungsten wire with the diameter of 0.04 mm; the peak current selected in the micropore forming process is 0.25A, the current pulse width is 2 mus, the pulse time is 100 mus, the processing capacitance is 3100pF, the distance between the electrode and the workpiece is controlled at 42 um, the vibration amplitude of the processing electrode is 4 x 10-6m, the vibration frequency is 1000Hz, and the rotating speed is 10000 rpm. After the micropore machining and forming is finished, annealing and softening treatment is carried out on the micropore, the used electric heating device is a tubular high-temperature furnace, argon-hydrogen mixed gas containing 10 vol% of hydrogen is introduced, the heat treatment temperature is 1100 ℃, the heat preservation time is 12 minutes, and water cooling is carried out rapidly. Then, the wafer with micropores after the heat treatment is subjected to electrolytic polishing, the formula of the electrolytic polishing solution is 200g/L of perchloric acid (with the concentration of 20 wt%), 800g/L of glacial acetic acid, the voltage of the electrolytic polishing is 30V, the time of the electrolytic polishing is 8 minutes, and the temperature of the electrolytic polishing is 80 ℃. Then, the wafer after electrolytic polishing is passivated, the formula of the used passivation solution is 350mL/L concentrated nitric acid (with the concentration of 68 wt%) and 650mL/L deionized water, the passivation time is 30 minutes, and the passivation temperature is 50 ℃. And ultrasonically cleaning the passivated wafer by using deionized water to remove the passivation solution, drying the wafer in a hundred-grade dust-free clean room, and independently vacuum-packaging each wafer by using plastic so as to realize good protection.
Example 3
adopting a T2 red copper plate with the plate thickness of 2mm, processing and generating a wafer with the outer diameter of 12mm in a stamping mode, adopting a deep micropore electric spark processing machine tool to form and process micropores with the diameter of 0.08mm in the center of the wafer, wherein the working solution used in the processing is deionized water with the insulation strength of 20 MOmega cm, and the electrode material used in the processing is molybdenum wire with the diameter of 0.07 mm; the peak current selected in the micropore forming process is 0.3A, the current pulse width is 4 mus, the pulse time is 100 mus, the processing capacitance is 3500pF, the distance between the electrode and the workpiece is controlled at 50 um, the vibration amplitude of the processing electrode is 6 x 10-6m, the vibration frequency is 1100Hz, and the rotating speed is 12000 rpm. And after finishing the micropore machining and forming, carrying out annealing and softening treatment on the micropore, wherein the used electric heating device is a tubular high-temperature furnace, introducing argon-hydrogen mixed gas containing 10 vol% of hydrogen, carrying out heat treatment at 400-500 ℃ for 10 minutes, and carrying out water cooling rapidly. Then, the wafer with micropores after the heat treatment is subjected to electrolytic polishing, the formula of the electrolytic polishing solution is 825mL/L orthophosphoric acid and 175mL/L deionized water, the voltage of the electrolytic polishing is 2V, the time is 40 minutes, and the temperature of the electrolytic polishing is 40 ℃. Then, passivating the wafer after electrolytic polishing, wherein the formula of the used passivation solution comprises 16ml/L sulfuric acid (with the concentration of 98 wt%), 100g/L chromium trioxide (with the purity of 99.5 wt%) and the balance of water; the passivation time was 20 seconds and the passivation temperature was 30 ℃. And ultrasonically cleaning the passivated wafer by using deionized water to remove the passivation solution, drying the wafer in a hundred-grade dust-free clean room, and independently vacuum-packaging each wafer by using plastic so as to realize good protection.
As shown in figure 2, the high-cleanness flow-limiting sealing gasket produced by the invention is a round metal sheet which is provided with micropores in the middle, has high surface smoothness and is subjected to passivation treatment, and the material used by the high-cleanness flow-limiting sealing gasket is 316L stainless steel. The roughness Ra of the upper surface and the lower surface of the flow-limiting sealing gasket is less than 0.25 mu m, the flow-limiting sealing gasket can be stored for a long time through passivation treatment, has good sealing effect and strong high-temperature resistance and corrosion resistance, and can be used for sealing joints of special gas media.
the whole flow-limiting sealing gasket is in a disc shape, the diameter of the disc is 12-20 mm, and the thickness of the disc is 1-2 mm. The central hole of the flow-limiting sealing gasket is a hole structure formed by combining a taper hole and a micropore up and down, the taper hole is a taper hole with a large upper end and a small lower end, and the diameter of the lower end of the taper hole is the same as that of the micropore. The diameter of the micropores is 0.05-0.1 mm, and the height of the micropores is 0.6-0.8 mm.
the upper and lower surfaces of the flow-limiting sealing gasket produced by the invention are used for sealing the end face sealing type joint, and the micropore in the middle of the flow-limiting sealing gasket is used for limiting the flow so as to realize the micro gas flow. The invention can effectively promote the development and application of the high-cleanness flow-limiting sealing gasket, and the micropore in the center of the flow-limiting sealing gasket can obtain extremely low gas flow, thereby meeting some special flow requirements and having important significance for developing some special-purpose gas path systems.
Claims (1)
1. A manufacturing method of a high-cleanness flow-limiting sealing gasket is characterized by comprising the following specific operation steps:
(1) processing a metal plate with the plate thickness of 1-2 mm by a stamping or laser cutting mode to generate a wafer with the outer diameter of 12-20 mm;
(2) Adopting a deep micropore electric spark machine tool to perform forming processing on micropores with the diameter of 0.05-0.1 mm on the center of the wafer;
(3) After the micropore machining and forming are finished, annealing and softening treatment is carried out on the micropore machining and forming;
(4) Carrying out electrolytic polishing on the wafer with the micropores after the heat treatment;
(5) Passivating the wafer after electrolytic polishing;
(6) Ultrasonically cleaning the passivated wafer by using deionized water to remove the passivation solution, drying the wafer in a hundred-grade dust-free clean room, and independently packaging each wafer by vacuum plastics;
The metal plate is made of 304/304L stainless steel plate, 316/316L stainless steel plate, T2/T1 red copper plate or 1050/1060/1070 pure aluminum plate;
in the step (2), during micropore processing, for wafers made of 304/304L stainless steel, 316/316L stainless steel and T1/T2 red copper, the used working solution is deionized water with the insulation strength of 15-20M omega cm; for the wafer made of 1050/1060/1070 pure aluminum, the used working fluid is kerosene; for wafers made of 304/304L stainless steel and 316/316L stainless steel, the used electrode material is tungsten wires, and the diameter of each tungsten wire is 0.03-0.08 mm; for the wafer made of T1/T2 red copper, the used electrode material is molybdenum wire with the diameter of 0.03-0.08 mm; for a wafer made of 1050/1060/1070 pure aluminum, the used electrode material is brass wire with the diameter of 0.03-0.08 mm;
In the step (2), the peak current adopted for micropore processing is 0.2-0.3A, the current pulse width is 2-4 mus, the pulse time is 90-110 mus, the processing capacitance is 3000-3500 pF, the distance between an electrode and a workpiece is controlled to be 40-55 mu m, the vibration amplitude of the processing electrode is 4-6 multiplied by 10 < -6 > m, the vibration frequency is 900-1100 Hz, and the rotating speed is 8000-12000 rpm;
in the step (3), when annealing and softening treatment is carried out, an electric heating device is a tubular high-temperature furnace, argon-hydrogen mixed gas containing 8-12 vol% of hydrogen is introduced, for wafers made of 304/304L stainless steel and 316/316L stainless steel, the heat treatment temperature is 1000-1100 ℃, the heat preservation time is 8-20 minutes, and water cooling is carried out rapidly; for the wafer made of T1/T2 red copper, the heat treatment temperature is 400-500 ℃, the heat preservation time is 10-20 minutes, and water cooling is carried out rapidly; for a wafer made of 1050/1060/1070 pure aluminum, the heat treatment temperature is 360-420 ℃, the heat preservation time is 30-40 minutes, and water cooling is carried out rapidly;
In the step (4), during electrolytic polishing, for the wafer made of 304/304L stainless steel, the formula of the used electrolytic polishing solution is as follows: 140-180 g/L of phosphoric acid, 10-30 g/L of hexamethylenetetramine, 70-90 mL/L of sulfuric acid, 40-60 mL/L of glycerol, 5-15 g/L of o-benzoylsulfonimide and the balance of water; the voltage of electrolytic polishing is 18-22V, the time of electrolytic polishing is 5-7 minutes, and the temperature of electrolytic polishing is 55-65 ℃; for a disc made of 316/316L stainless steel, the formula of the used electrolytic polishing solution is as follows: 190-210 g/L of perchloric acid and the balance of glacial acetic acid; the voltage of electrolytic polishing is 25-35V, the time of electrolytic polishing is 7-9 minutes, and the temperature of electrolytic polishing is 75-85 ℃; for the wafer made of T1/T2 red copper, the formula of the used electrolytic polishing solution is as follows: 820-830 mL/L of orthophosphoric acid and the balance of deionized water; the voltage of electrolytic polishing is 1-3V, the time is 35-45 minutes, and the temperature of electrolytic polishing is 35-45 ℃; for a wafer made of 1050/1060/1070 pure aluminum, the formula of the used electrolytic polishing solution is as follows: perchloric acid 90-110 mL/L, and the balance of absolute ethyl alcohol; the voltage of electrolytic polishing is 29-31V, the time of electrolytic polishing is 25-35 seconds, and the temperature of electrolytic polishing is 35-45 ℃;
In the step (5), during passivation, for the 304/304L stainless steel wafer, the formula of the used passivation solution is as follows: 8-12 ml/L of sulfuric acid, 15-25 g/L of potassium nitrate and the balance of water; the passivation time is 18-22 minutes, and the passivation temperature is 80-85 ℃; for a disc made of 316/316L stainless steel, the formula of the used passivation solution is as follows: 340-360 mL/L of nitric acid and the balance of deionized water; the passivation time is 25-35 minutes, and the passivation temperature is 45-55 ℃; for the wafer made of T1/T2 red copper, the formula of the used passivation solution is as follows: 15-17 ml/L of sulfuric acid, 90-110 g/L of chromium trioxide and the balance of water; the passivation time is 15-25 seconds, and the passivation temperature is 25-35 ℃; for a wafer made of 1050/1060/1070 pure aluminum, the formula of the used passivation solution is as follows: 35-37 ml/L of sulfuric acid, 190-210 g/L of chromium trioxide and the balance of water; the passivation time is 25-35 seconds, and the passivation temperature is 25-30 ℃.
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| CN113833849A (en) * | 2020-06-24 | 2021-12-24 | 中国石油化工股份有限公司 | Metal gasket for diamond pressure cavity high-temperature and high-pressure experiment and manufacturing method thereof |
| CN115142065A (en) * | 2022-06-09 | 2022-10-04 | 宁波顺成电器有限公司 | Surface treatment method for reducing contact resistance of rivet type contact surface |
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