CN107994103B - 一种钙钛矿量子点倒装led光源 - Google Patents
一种钙钛矿量子点倒装led光源 Download PDFInfo
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- CN107994103B CN107994103B CN201711459688.XA CN201711459688A CN107994103B CN 107994103 B CN107994103 B CN 107994103B CN 201711459688 A CN201711459688 A CN 201711459688A CN 107994103 B CN107994103 B CN 107994103B
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- quantum dot
- perovskite quantum
- silicon dioxide
- light source
- led light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201711459688.XA CN107994103B (zh) | 2017-12-28 | 2017-12-28 | 一种钙钛矿量子点倒装led光源 |
Applications Claiming Priority (1)
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CN201711459688.XA CN107994103B (zh) | 2017-12-28 | 2017-12-28 | 一种钙钛矿量子点倒装led光源 |
Publications (2)
Publication Number | Publication Date |
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CN107994103A CN107994103A (zh) | 2018-05-04 |
CN107994103B true CN107994103B (zh) | 2023-07-18 |
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CN201711459688.XA Active CN107994103B (zh) | 2017-12-28 | 2017-12-28 | 一种钙钛矿量子点倒装led光源 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108735879A (zh) * | 2018-07-26 | 2018-11-02 | 易美芯光(北京)科技有限公司 | 一种含有量子点的smd封装结构 |
CN109338336B (zh) * | 2018-09-30 | 2020-06-12 | 韩山师范学院 | 利用等离子体原位和实时诊断发光量子点衰退的方法 |
CN111200066B (zh) * | 2018-11-16 | 2021-06-22 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
CN109407400A (zh) * | 2018-11-23 | 2019-03-01 | 深圳Tcl新技术有限公司 | 直下式背光模组及显示设备 |
CN110534631B (zh) * | 2019-09-05 | 2021-01-15 | 大连海事大学 | 一种led结合钙钛矿量子点微晶玻璃的显示用宽色域背光源 |
CN113634457B (zh) * | 2021-08-10 | 2022-06-07 | 湖南大学 | 一种MicroLED面板覆膜装置及使用方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002099005A (ja) * | 2000-09-25 | 2002-04-05 | Fujitsu Ltd | 表示用回転粒子、その製造方法、及びシート型表示装置 |
CN205452347U (zh) * | 2015-09-29 | 2016-08-10 | 易美芯光(北京)科技有限公司 | 一种支架型量子点led封装结构 |
CN106025042A (zh) * | 2016-07-25 | 2016-10-12 | 吉林大学 | 基于二氧化硅包覆钙钛矿量子点的稳定白光led及制备方法 |
WO2017037685A1 (en) * | 2015-09-04 | 2017-03-09 | University Of The Witwatersrand, Johannesburg | Biodegradable implant |
CN107446572A (zh) * | 2017-09-01 | 2017-12-08 | 中国科学院长春光学精密机械与物理研究所 | 合成二氧化硅包覆有机‑无机钙钛矿结构量子点的方法及其合成的量子点的应用 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2002309026A1 (en) * | 2002-05-01 | 2003-11-17 | Hokkaido Technology Licensing Office Co., Ltd. | Gel having multiple network structure and method for preparation thereof |
WO2017151773A1 (en) * | 2016-03-01 | 2017-09-08 | Prodo Laboratories, Inc. | Encapsulation methods and compositions |
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2017
- 2017-12-28 CN CN201711459688.XA patent/CN107994103B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002099005A (ja) * | 2000-09-25 | 2002-04-05 | Fujitsu Ltd | 表示用回転粒子、その製造方法、及びシート型表示装置 |
WO2017037685A1 (en) * | 2015-09-04 | 2017-03-09 | University Of The Witwatersrand, Johannesburg | Biodegradable implant |
CN205452347U (zh) * | 2015-09-29 | 2016-08-10 | 易美芯光(北京)科技有限公司 | 一种支架型量子点led封装结构 |
CN106025042A (zh) * | 2016-07-25 | 2016-10-12 | 吉林大学 | 基于二氧化硅包覆钙钛矿量子点的稳定白光led及制备方法 |
CN107446572A (zh) * | 2017-09-01 | 2017-12-08 | 中国科学院长春光学精密机械与物理研究所 | 合成二氧化硅包覆有机‑无机钙钛矿结构量子点的方法及其合成的量子点的应用 |
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Effective date of registration: 20230627 Address after: 221000 Plant 6, Precision Manufacturing Park, Suining Economic Development Zone, Xuzhou City, Jiangsu Province Applicant after: Jiangsu Chuandu Optoelectronic Technology Co.,Ltd. Address before: 710000 Room 31401, Unit 3, Unit 14, Jiatian International Building No. 1, 216 Taibai South Road, Yanta District, Xi'an City, Shaanxi Province Applicant before: Xi'an Crossing Photoelectric Technology Co.,Ltd. Effective date of registration: 20230627 Address after: 710000 Room 31401, Unit 3, Unit 14, Jiatian International Building No. 1, 216 Taibai South Road, Yanta District, Xi'an City, Shaanxi Province Applicant after: Xi'an Crossing Photoelectric Technology Co.,Ltd. Address before: No. 16, Baiyang Road, Huoguang Village, Wujiagang District, Yichang, 443001, Hubei Province Applicant before: YICHANG HUAYAO TECHNOLOGY Co.,Ltd. |
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