CN107993912A - A kind of method for the ion implantation angle for calibrating ion implantation apparatus - Google Patents
A kind of method for the ion implantation angle for calibrating ion implantation apparatus Download PDFInfo
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- CN107993912A CN107993912A CN201711185019.8A CN201711185019A CN107993912A CN 107993912 A CN107993912 A CN 107993912A CN 201711185019 A CN201711185019 A CN 201711185019A CN 107993912 A CN107993912 A CN 107993912A
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- angle
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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Abstract
The invention discloses a kind of method for the ion implantation angle for calibrating ion implantation apparatus, multiple and different ion implantation angles is chosen, ion implanting is carried out to common silicon chip using ion implantation apparatus；Sheet resistance value is measured after annealing, calibration curve is established according to sheet resistance value and corresponding implant angle, calculates and obtains collimation angle.The cost of implant angle calibration can be reduced by substituting existing high precision silicon slice using common silicon chip in technical solution of the present invention, the relatively low heat wave value of accuracy is replaced using sheet resistance value, equal implant angle calibration effect can be also realized under conditions of without using high precision silicon slice.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of side for the ion implantation angle for calibrating ion implantation apparatus
Method.
Background technology
With developing rapidly for very large scale integration technology, the size of semiconductor devices is constantly reducing, it is made
The required precision for making technique is higher and higher.The major requirement of manufacturing process intermediate ion injection technology includes uniformity and repeats
Property, energy purity, implant angle accuracy etc..With the diminution of dimensions of semiconductor devices, ultra-shallow junctions injection, pocket structures
The control to ion implantation angle such as injection, Halo structure injection, Channeling implantation and the injection of high-precision side wall requires very smart
It is accurate.
Due to the high-precision requirement to ion implantation angle, the note to ion injection machine table is needed in ion implantation technology
Enter angle to be calibrated or monitored, the method for the implant angle calibration of current existing ion implantation apparatus is：It is high-precision using multi-disc
Silicon chip (accurate wafer) is spent in the desirable scope of the raceway groove angle theoretical value of high precision silicon slice in lengthwise position and transverse direction
Position carries out ion implanting, the heat wave value (TW, full name Thermal Wave) of high precision silicon slice is measured afterwards, according to figure
Shown in 3, the curve L2 finally formed according to heat wave value and ion implantation angle carries out symmetrical analysis, and analysis method is using minimum
Square law, obtains the angle of the vertex correspondence of curve L2, the angle as calibration.More common silicon chip (the normal of high precision silicon slice
Wafer) there is more preferable crystal orientation angle, since manufacturing process is complicated, there are larger for the more common silicon chip of corresponding manufacture cost
Gap.
But existing angle calibration system method employs high precision silicon slice and exists, the production cost of increase, while existing heat
Wave number measurement is not high to the accuracy reliability of ion implantation angle calibration result, certain error can be produced, for high accuracy
Manufacturing process can have a huge impact.
The content of the invention
For the prior art existing above problem in the art of semiconductor manufacturing, a kind of calibration ion implantation apparatus is now provided
Ion implantation angle method.
Concrete technical scheme is as follows：
A kind of method for the ion implantation angle for calibrating ion implantation apparatus, comprises the following steps：
Step S1：Multiple silicon chips are provided, chosen in the range of the raceway groove angle theoretical value of the silicon chip it is multiple and different from
Sub- implant angle, each silicon chip corresponds to an ion implantation angle, using ion implantation apparatus to each silicon chip root
Ion implanting is carried out according to the corresponding ion implantation angle；
Step S2：Made annealing treatment for multiple silicon chips；
Step S3：The sheet resistance value of each silicon chip is measured successively；
Step S4：Calibration curve is established according to the sheet resistance value and the corresponding ion implantation angle, to described
Calibration curve carries out least square method calculating, obtains collimation angle；
Step S5：Ion implantation apparatus is calibrated according to the collimation angle.
Preferably, in the step S1, the ion implantation angle includes regulation of longitudinal angle and lateral angles；
The multiple silicon chip include two groups, the ion implanting of one group of carry out regulation of longitudinal angle, another group of carry out horizontal stroke
To the ion implanting of angle.
Preferably, in the step S4, the calibration curve includes horizontal curve and Vertical Curve, the horizontal curve by
The incidence angle of the sheet resistance value and corresponding lateral angles is formed；The Vertical Curve is by the sheet resistance value and correspondence
Regulation of longitudinal angle incidence angle form.
Preferably, in the step S4, least square method calculating is carried out respectively to the horizontal curve and Vertical Curve, is obtained
To horizontal collimation angle and longitudinal alignment angle.
Preferably, in the step S1, the ion implantation angle includes：
Benchmark longitudinal direction implant angle and benchmark are injected laterally into angle；
At least two relative to benchmark longitudinal direction implant angle opposing longitudinal angle in a longitudinal direction；
At least two are injected laterally into angle lateral angles opposite in a lateral direction relative to the benchmark.
Preferably, the ion implantation angle includes：5 regulation of longitudinal angle and 5 lateral angles.
Preferably, in the step S1, to the dopant species of each silicon chip progress ion implanting, Implantation Energy, note
Enter dosage all same.
Preferably, using arsenic as the dopant species, the Implantation Energy is 170KEV, implantation dosage 5E13.
Above-mentioned technical proposal has the following advantages that or beneficial effect：
The silicon chip that this programme uses substitutes existing high precision silicon slice for common silicon chip, using common silicon chip can reduce note
Enter the cost of angle calibration system, established and calibrated as benchmark using the sheet resistance value after measurement ion implanting and ion implantation angle
Curve, is realized by the analysis to calibration curve and implant angle is calibrated, and the relatively low heat of accuracy is replaced using sheet resistance value
Wave number, can also realize equal implant angle calibration effect under conditions of without using high precision silicon slice.
Brief description of the drawings
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
Illustrate, and be not meant to limit the scope of the invention.
Fig. 1 is a kind of flow chart of the embodiment of the method for the ion implantation angle for calibrating ion implantation apparatus of the present invention；
Fig. 2 is the schematic diagram of lieutenant colonel's directrix curve of the embodiment of the present invention；
Fig. 3 is the curve for measuring acquisition using heat wave value using high precision silicon slice in the prior art.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained on the premise of creative work is not made it is all its
His embodiment, belongs to the scope of protection of the invention.
It should be noted that in the case where there is no conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
In a kind of preferred embodiment of the present invention, according to Fig. 1, a kind of ion implantation angle for calibrating ion implantation apparatus
Method, comprise the following steps：
Step S1：Multiple silicon chips are provided, multiple and different ion notes is chosen in the range of the raceway groove angle theoretical value of silicon chip
Enter angle, each silicon chip corresponds to an ion implantation angle, using ion implantation apparatus to each silicon chip according to corresponding ion implanting
Angle carries out ion implanting；
Step S2：Made annealing treatment for multiple silicon chips；
Step S3：The sheet resistance value of each silicon chip is measured successively；
Step S4：Calibration curve is established according to sheet resistance value and corresponding ion implantation angle, calibration curve is carried out
Least square method calculates, and obtains collimation angle；
Step S5：Ion implantation apparatus is calibrated according to collimation angle.
Specifically, in the present embodiment, received in 65 Nano grades, 55 Nano grades, 45 Nano grades, 40 Nano grades, 32
Meter level is other, the ion implanting of 28 Nano grades, and the ion implanting of different angle is carried out using common silicon chip, after annealing activation note
The foreign atom entered.Since silicon chip is after ion implantation technology is completed, silicon chip resistance is capable of the equal of accuracy reactive ion injection
Even property, simultaneously as existing common silicon chip precision is inadequate and heat wave value accuracy of measurement is relatively low, error is larger to be realized
To the accurate alignment of ion implantation angle.Therefore, existing heat wave value is replaced using the test sheet resistance value of common silicon chip to survey
Amount, realizes the uniformity of reactive ion injection technology exactly.Above-mentioned technique can be applied to logic chip, memory chip, radio frequency
In the manufacture of the semiconductor new chip such as chip, flash memory, embedded flash memory.
Further, calibration curve L1 is established using by each implant angle and the fitting of each sheet resistance value, according to Fig. 2
Shown, transverse axis represents the angle of ion implanting, and the longitudinal axis represents sheet resistance value, each implant angle and corresponding sheet resistance value
Form data point pi(xi, yi), i=1,2 ..., m.Calibration curve L1 is a V-type curve, and the obtained curve equation of fitting isLeast square method calculating is carried out to calibration curve L1, calculation formula is：
So as to obtain the vertex of calibration curve L1, the implant angle on vertex is the angle that ion implantation apparatus needs to calibrate.
In a kind of preferred embodiment of the present invention, in step S1, ion implantation angle includes regulation of longitudinal angle and lateral angles；
Multiple silicon chips include two groups, the ion implanting of one group of carry out regulation of longitudinal angle, the ion of another group of carry out lateral angles
Injection.
In step S4, calibration curve includes horizontal curve and Vertical Curve, and horizontal curve is by sheet resistance value and corresponding
The incidence angle of lateral angles is formed；Vertical Curve is made of the incidence angle of sheet resistance value and corresponding regulation of longitudinal angle.
In step S4, least square method calculating is carried out respectively to horizontal curve and Vertical Curve, obtains horizontal collimation angle
With longitudinal alignment angle.
Specifically, in the present embodiment, regulation of longitudinal angle and lateral angles are separately tested in ion implantation process, are reduced
The lateral position of ion implanting and the mutual influence of lengthwise position, carry out separating school to the horizontal and vertical of angle of ion implanting
It is accurate so that calibration is more accurate.
In a kind of preferred embodiment of the present invention, in step S1, ion implantation angle includes：
Benchmark longitudinal direction implant angle and benchmark are injected laterally into angle；
At least two relative to benchmark longitudinal direction implant angle opposing longitudinal angle in a longitudinal direction；
At least two are injected laterally into angle lateral angles opposite in a lateral direction relative to benchmark.
Specifically, in the present embodiment, since before ion implantation apparatus is calibrated, the benchmark implant angle of ion implantation apparatus is usual
The vertex of very close calibration curve L1, calibration curve L1 is aided in determining whether for the data gathered close to the angle of calibration target
Vertex, so as to obtain more accurately collimation angle.
Further, after benchmark implant angle has been set, on longitudinal direction or horizontal direction, setting at least two
The opposite implant angle in direction, it is ensured that can get data in the both sides of the vertex position of calibration curve L1, help
In the vertex for determining calibration curve L1, so as to obtain collimation angle.
In a kind of preferred embodiment of the present invention, ion implantation angle includes：5 regulation of longitudinal angle and 5 lateral angles.
Specifically, in the present embodiment, longitudinal direction or horizontal direction set at least five be used for test injector angle
Degree, can cause more accurate by calculating the collimation angle obtained.Further, using the note for being used to test more than 5
Enter angle, can further improve the accuracy of collimation angle.
In a kind of preferred embodiment of the present invention, in step S1, dopant species, the note of ion implanting are carried out to each silicon chip
Enter energy, implantation dosage all same.
Specifically, in the present embodiment, using identical ion implanting conditions, it can make it that the result of calibration is more smart
Really.
In a kind of preferred embodiment of the present invention, using arsenic as dopant species, Implantation Energy 170KEV, implantation dosage
For 5E13.
Specifically, in the present embodiment, the susceptibility using above-mentioned ion implanting conditions for the angle of ion implanting
It is higher, help to improve the precision of calibration.
The foregoing is merely preferred embodiments of the present invention, not thereby limit embodiments of the present invention and protection model
Enclose, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent substitution and obviously change obtained scheme, should be included in protection scope of the present invention.
Claims (8)
- A kind of 1. method for the ion implantation angle for calibrating ion implantation apparatus, it is characterised in that comprise the following steps：Step S1：Multiple silicon chips are provided, multiple and different ion notes is chosen in the range of the raceway groove angle theoretical value of the silicon chip Enter angle, each silicon chip corresponds to an ion implantation angle, using ion implantation apparatus to each silicon chip according to right The ion implantation angle answered carries out ion implanting；Step S2：Made annealing treatment for multiple silicon chips；Step S3：The sheet resistance value of each silicon chip is measured successively；Step S4：Calibration curve is established according to the sheet resistance value and the corresponding ion implantation angle, to the calibration Curve carries out least square method calculating, obtains collimation angle；Step S5：Ion implantation apparatus is calibrated according to the collimation angle.
- 2. the method for the ion implantation angle of calibration ion implantation apparatus according to claim 1, it is characterised in that the step In rapid S1, the ion implantation angle includes regulation of longitudinal angle and lateral angles；The multiple silicon chip include two groups, the ion implanting of one group of carry out regulation of longitudinal angle, another group of carry out lateral angle The ion implanting of degree.
- 3. the method for the ion implantation angle of calibration ion implantation apparatus according to claim 2, it is characterised in that the step In rapid S4, the calibration curve includes horizontal curve and Vertical Curve, and the horizontal curve is by the sheet resistance value and correspondence Lateral angles incidence angle form；The Vertical Curve is by the sheet resistance value and the incidence angle structure of corresponding regulation of longitudinal angle Into.
- 4. the method for the ion implantation angle of calibration ion implantation apparatus according to claim 3, it is characterised in that the step In rapid S4, least square method calculating is carried out respectively to the horizontal curve and Vertical Curve, obtains horizontal collimation angle and longitudinal direction Collimation angle.
- 5. the method for the ion implantation angle of calibration ion implantation apparatus according to claim 2, it is characterised in that the step In rapid S1, the ion implantation angle includes：Benchmark longitudinal direction implant angle and benchmark are injected laterally into angle；At least two relative to benchmark longitudinal direction implant angle opposing longitudinal angle in a longitudinal direction；At least two are injected laterally into angle lateral angles opposite in a lateral direction relative to the benchmark.
- 6. it is according to claim 5 calibration ion implantation apparatus ion implantation angle method, it is characterised in that it is described from Sub- implant angle includes：5 regulation of longitudinal angle and 5 lateral angles.
- 7. the method for the ion implantation angle of calibration ion implantation apparatus according to claim 1, it is characterised in that the step In rapid S1, dopant species, Implantation Energy, the implantation dosage all same of ion implanting are carried out to each silicon chip.
- 8. the method for the ion implantation angle of calibration ion implantation apparatus according to claim 1, it is characterised in that using arsenic As the dopant species, the Implantation Energy is 170KEV, implantation dosage 5E13.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854033A (en) * | 2019-11-25 | 2020-02-28 | 上海华力微电子有限公司 | Ion implantation angle deviation monitoring method and system |
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| US20060138357A1 (en) * | 2004-12-29 | 2006-06-29 | Dongbuanam Semiconductor Inc. | Method for fabricating a metal-insulator-metal capacitor |
| US7397046B2 (en) * | 2004-12-29 | 2008-07-08 | Texas Instruments Incorporated | Method for implanter angle verification and calibration |
| CN103646892A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | A method for monitoring an ion implantation angle |
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| CN110854033A (en) * | 2019-11-25 | 2020-02-28 | 上海华力微电子有限公司 | Ion implantation angle deviation monitoring method and system |
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Application publication date: 20180504 |