CN107990852A - Three-dimensional critical size measuring method based on scanning electron microscope - Google Patents
Three-dimensional critical size measuring method based on scanning electron microscope Download PDFInfo
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- CN107990852A CN107990852A CN201711139423.1A CN201711139423A CN107990852A CN 107990852 A CN107990852 A CN 107990852A CN 201711139423 A CN201711139423 A CN 201711139423A CN 107990852 A CN107990852 A CN 107990852A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
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Abstract
The invention discloses a kind of three-dimensional critical size measuring method based on scanning electron microscope, belong to technical field of semiconductors.The described method includes：Electron beam is vertically tilted to first angle incidence raceway groove, shooting raceway groove picture by scanning electron microscope obtains the first picture, and the first picture of analysis obtains the tangent expression formula of first angle；Electron beam is vertically tilted to second angle incidence raceway groove, second angle is differed with first angle, and shooting raceway groove picture by scanning electron microscope obtains second picture, and analysis second picture obtains the tangent expression formula of second angle；The three-dimensional critical size of raceway groove is calculated according to the tangent expression formula of the tangent expression formula of first angle and second angle.In the present invention, the quick online nondestructive measurement of the three-dimensional critical size of high-aspect-ratio is realized, it can not only save time and cost, and shorten the R＆D cycle, and disclosure satisfy that large-scale production requirement.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of three-dimensional critical size based on scanning electron microscope
Measuring method.
Background technology
With the continuous development to integrated level and storage capacity requirement, three-dimensional storage comes into being.Three-dimensional storage is
A kind of novel product based on flat memory, its main characteristics are that planar structure is converted to stereochemical structure, to greatly save
Chip area.It is three-dimensional to its high-aspect-ratio to close to ensure efficiency of research and development and product yield in the R＆D process of three-dimensional storage
The On-line rapid measurement of key size is most important.At present, generally use atomic force microscope (Atomic Force
Microscope, AFM), optical critical dimension (Optical Critical Dimension, OCD), transmission electron microscope
The methods of (Transmission Electron Microscope, TEM), carries out the measurement of high-aspect-ratio three-dimensional critical size；So
And atomic force microscope measuring method therein, its measuring speed are slow, thus be not suitable for the online quick survey of semiconductor technology
Amount；Optical critical dimension measuring method therein, it models time length, need to consume more time cost；Transmission electricity therein
Sub- microscopy measurements, it is destructive measurement, can not realize on-line measurement.The measuring method of existing critical size also has
One kind, i.e. scanning electron microscope (Scanning Electron Microscope, SEM) measuring method, it can be realized quickly
On-line measurement, but be but only limitted to the measurement of plane characteristic at present, the height letter of channel depth or boss etc. can not be obtained
Breath.As it can be seen that seek a kind of measuring method of fast and effectively high-aspect-ratio three-dimensional critical size, to adapt to the fast of three-dimensional storage
Speed development is necessary；In other words, the fast on-line measurement of plane characteristic can be realized based on scanning electron microscope, then
The measurement for how applying it to high-aspect-ratio three-dimensional critical size is also necessary.
The content of the invention
To solve the deficiencies in the prior art, the present invention provides a kind of three-dimensional critical size based on scanning electron microscope and surveys
Amount method, including：
Electron beam is vertically tilted to first angle incidence raceway groove, raceway groove picture is shot by scanning electron microscope
The first picture is obtained, first picture is analyzed and obtains the tangent expression formula of the first angle；
Electron beam is vertically tilted to second angle incidence raceway groove, the second angle and the first angle are not
Deng, by scanning electron microscope shoot raceway groove picture obtain second picture, analyze the second picture and obtain described second jiao
The tangent expression formula of degree；
The raceway groove is calculated according to the tangent expression formula of the tangent expression formula of the first angle and the second angle
Three-dimensional critical size.
Alternatively, the first angle and the second angle are all higher than 0 degree less than 10 degree.
Alternatively, the three-dimensional critical size of the raceway groove is the channel depth of premeasuring；
Analysis first picture obtains the tangent expression formula of the first angle, is specially：Measure described first
The sidewall width of electron beam oblique projection in picture, according to the sidewall width of measurement and the channel depth of premeasuring to first angle
Tangent be indicated to obtain the tangent expression formula of first angle；
The analysis second picture obtains the tangent expression formula of the second angle, is specially：Measure described second
The sidewall width of electron beam oblique projection in picture, according to the sidewall width of measurement and the channel depth of premeasuring to second angle
Tangent be indicated to obtain the tangent expression formula of second angle.
Alternatively, the first angle is α, and the sidewall width for measuring electron beam oblique projection in first picture is
L1；The second angle is θ, and the sidewall width for measuring electron beam oblique projection in the second picture is L2；Described first jiao
Differential seat angle between degree α and the second angle are θ is γ, and the channel depth of the premeasuring is expressed as H；
The tangent expression formula of the first angle is：Tan α=L1/H；
The tangent expression formula of the second angle is：Tan θ=L2/H.
According to the tangent expression formula of the first angle and the tangent expression formula of the second angle, premeasuring is derived
Channel depth H=L1L2tan γ/(L2-L1tan γ).
Alternatively, when electron beam is incident from the top of raceway groove side, when injecting the bottom of raceway groove opposite side, electron beam inclines
Oblique angle is critical inclination angle, and the depth-to-width ratio of corresponding raceway groove is maximum depth-to-width ratio.
Alternatively, the method is also applied to etch the three-dimensional critical size of the deep hole of high-aspect-ratio, deep trouth and boss
Measurement.
The advantage of the invention is that：
In the present invention, based on scanning electron microscope, and combination image-forming principle and trigonometric function can be counted fast and effectively
The three-dimensional critical size of high-aspect-ratio is calculated, realizes quick online nondestructive measurement, it can not only save time and cost,
Shorten the R＆D cycle, and disclosure satisfy that large-scale production requirement.
Brief description of the drawings
By reading the detailed description of hereafter preferred embodiment, it is various other the advantages of and benefit it is common for this area
Technical staff will be clear understanding.Attached drawing is only used for showing the purpose of preferred embodiment, and is not considered as to the present invention
Limitation.And in whole attached drawing, identical component is denoted by the same reference numerals.In the accompanying drawings：
Attached drawing 1 is a kind of three-dimensional critical size measuring method flow based on scanning electron microscope provided by the invention
Figure；
The raceway groove picture of scanning electron microscope shooting when attached drawing 2 tilts first angle incidence for electron beam；
Attached drawing 3 tilts incident schematic diagram during first angle for electron beam；
Attached drawing 4 tilts incident isoboles during first angle for electron beam；
Enlarged drawing when attached drawing 5 tilts first angle incidence for electron beam between L1, H, α；
The raceway groove picture of scanning electron microscope shooting when attached drawing 6 tilts second angle incidence for electron beam；
Attached drawing 7 tilts incident schematic diagram during second angle for electron beam；
Attached drawing 8 tilts incident isoboles during second angle for electron beam；
Enlarged drawing when attached drawing 9 tilts second angle incidence for electron beam between L2, H, θ；
Attached drawing 10 is schematic diagram of the electron beam with critical inclination angle when incident；
Attached drawing 11 for electron beam non-oblique incidence when scanning electron microscope shooting raceway groove picture；
Attached drawing 12 for electron beam non-oblique incidence when schematic diagram；
Attached drawing 13 for electron beam non-oblique incidence when isoboles.
Embodiment
The illustrative embodiments of the disclosure are more fully described below with reference to accompanying drawings.Although this public affairs is shown in attached drawing
The illustrative embodiments opened, it being understood, however, that may be realized in various forms the disclosure without the reality that should be illustrated here
The mode of applying is limited.Conversely, there is provided these embodiments are to be able to be best understood from the disclosure, and can be by this public affairs
The scope opened intactly is communicated to those skilled in the art.
According to the embodiment of the present invention, there is provided a kind of three-dimensional critical size measurement side based on scanning electron microscope
Method, as shown in Figure 1, including：
Electron beam is vertically tilted to first angle incidence raceway groove, raceway groove picture is shot by scanning electron microscope
The first picture is obtained, the first picture of analysis obtains the tangent expression formula of first angle；
Electron beam is vertically tilted to second angle incidence raceway groove, second angle is differed with first angle, by sweeping
Retouch electron microscope shooting raceway groove picture and obtain second picture, analysis second picture obtains the tangent expression formula of second angle；
The three-dimensional critical size of raceway groove is calculated according to the tangent expression formula of the tangent expression formula of first angle and second angle.
According to the embodiment of the present invention, first angle and second angle are all higher than 0 degree less than 10 degree.
According to the embodiment of the present invention, the three-dimensional critical size of raceway groove is the channel depth of premeasuring；
Accordingly, analysis states the first picture and obtains the tangent expression formula of first angle, is specially：Measure electric in the first picture
The sidewall width of beamlet oblique projection, just the cutting into first angle according to the sidewall width of measurement and the channel depth of premeasuring
Row represents to obtain the tangent expression formula of first angle；
Accordingly, analysis second picture obtains the tangent expression formula of second angle, is specially：Measure electronics in second picture
The sidewall width of beam oblique projection, carries out the tangent of second angle according to the sidewall width of measurement and the channel depth of premeasuring
Expression obtains the tangent expression formula of second angle.
It may be noted that ground, since actual conditions lower channel is not substantially vertical, but there are certain inclination angle, the present invention
In, to make design have generality, defining electron beam, vertically inclined angle is that trench sidewalls and electron beam are incident
Angle between direction.And first angle can be more than second angle, might be less that second angle；The corresponding electricity of first angle
The incline direction of the incline direction of beamlet electron beam corresponding with second angle may be the same or different.In the present invention, it is
Easy to describe, second angle is less than with first angle, and the incline direction of electron beam twice is identical, be exemplified by being tilted to the right into
Row explanation.
Specifically, as shown in Figures 2 to 5, when electron beam is vertically tilted to the right first angle α incidence raceway grooves,
Since raceway groove left bottom is stopped by raceway groove left side top, thus the information of raceway groove left bottom can not be collected into；Therefore, exist
In the picture shot using scanning electron microscope shown in Fig. 2, first bright line in left side is the information of raceway groove left side top,
Article 2 bright line is the information of raceway groove bottom right side, and Article 3 bright line is the information of raceway groove right hand top；At this time, Article 2 bright line
The distance between Article 3 bright line L1 is the sidewall width of electron beam oblique projection, can be measured from picture；Will be pre-
The channel depth of measurement is expressed as H, then has the tangent expression formula of first angle：Tan α=L1/H.
As shown in Figures 6 to 9, when electron beam is vertically tilted to the right second angle θ incidence raceway grooves, also due to
Raceway groove left bottom is stopped by raceway groove left side top, thus can not be collected into the information of raceway groove left bottom；Therefore, in Fig. 6
In the shown picture shot using scanning electron microscope, first bright line in left side is the information of raceway groove left side top, the
Two bright lines are the information of raceway groove bottom right side, and Article 3 bright line is the information of raceway groove right hand top；At this time, Article 2 bright line with
The distance between Article 3 bright line L2 is the sidewall width of electron beam oblique projection, it can be measured from picture；Due to
Second angle θ is more than first angle α, thus L2 is significantly than L1 wide；The channel depth of premeasuring is expressed as H, then has
The tangent expression formula of two angles：Tan α=L1/H.
Further, in the present embodiment, the differential seat angle between second angle and first angle is expressed as γ, it is corresponding
Ground, the three-dimensional critical size of raceway groove is calculated according to the tangent expression formula of the tangent expression formula of first angle and second angle, specifically
For：According to the tangent expression formula of first angle and the tangent expression formula of second angle, the channel depth H=of premeasuring is derived
L1L2tanγ/(L2-L1tanγ)。
Further, in the present embodiment, when electron beam is incident from the top of raceway groove side, raceway groove opposite side is injected
During bottom, the inclination angle of electron beam is critical inclination angle, and the depth-to-width ratio of corresponding raceway groove is maximum depth-to-width ratio.
Specifically, it is incident from the left side top of raceway groove with electron beam in the present invention, inject exemplified by the bottom right side of raceway groove into
Row explanation, as shown in Figure 10, trench bottom figure will not produce at this time, thus cannot be distinguished by out side wall boundary, at this time electron beam
Inclination angle be critical inclination angle β, the sidewall width of electron beam oblique projection is L, and the depth of raceway groove is H, corresponding raceway groove
Depth-to-width ratio is maximum depth-to-width ratio；At this time, the tangent expression formula of critical inclination angle β is：Tan β=L/H, then the maximum of raceway groove is deep wide
Than H/L=1/tan β.
More specifically, the present invention in, due to being limited be subject to board, when critical inclination angle β be 10 degree, the work of board
State is relatively stable, the maximum depth-to-width ratio H/L=1/tan10=5.73 of corresponding raceway groove.In some embodiments, it is critical to incline
Oblique angle β can also be 14 degree, and the working status of board is not very stable at this time.It may be noted that ground, for the knot of depth-to-width ratio bigger
Structure, corresponding critical inclination angle can be smaller.
In the present invention, as shown in Figure 11 to Figure 13, when electron beam does not tilt and injects raceway groove, since electron beam is approximate and side
Wall direction is parallel, and the secondary electron of boundary is influenced electronics ratio that is smaller, thus being collected into side wall boundary be subject to around
Other regions are more, so that the border of white is produced, and other regions are relatively dark.It can be seen from the figure that in electron beam not
Tilt in the case of injecting, since electron beam is approximate parallel with sidewall direction, and the profile of invisible side wall, it can only see white
Border；Only after electron beam tilts certain angle, side wall can just be projected out one fixed width；In the present invention according to this not
Together, corresponding two width values are obtained twice by tilting electron beam, and combine the differential seat angle of front and rear inclined twice, calculate
The three-dimensional critical size of raceway groove, i.e. depth.
According to the embodiment of the present invention, the three-dimensional critical size measuring method in the present invention is not limited to the three of measurement raceway groove
Critical size is tieed up, extends also to the three-dimensional critical size measurement in deep hole, deep trouth and boss of etching high-aspect-ratio etc..
In the present invention, based on scanning electron microscope, and combination image-forming principle and trigonometric function can be counted fast and effectively
The three-dimensional critical size of high-aspect-ratio is calculated, realizes quick online nondestructive measurement, it can not only save time and cost,
Shorten the R＆D cycle, and disclosure satisfy that large-scale production requirement.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of the claim
Subject to enclosing.
Claims (6)
- A kind of 1. three-dimensional critical size measuring method based on scanning electron microscope, it is characterised in that including：Electron beam is vertically tilted to first angle incidence raceway groove, shooting raceway groove picture by scanning electron microscope obtains First picture, analyzes first picture and obtains the tangent expression formula of the first angle；Electron beam is vertically tilted to second angle incidence raceway groove, the second angle is differed with the first angle, is led to Overscanning electron microscope shooting raceway groove picture obtains second picture, analyzes the second picture and is obtaining the second angle just Cut expression formula；The three-dimensional of the raceway groove is calculated according to the tangent expression formula of the tangent expression formula of the first angle and the second angle Critical size.
- 2. according to the method described in claim 1, it is characterized in that, the first angle and the second angle are all higher than 0 degree Less than 10 degree.
- 3. according to the method described in claim 1, it is characterized in that, the three-dimensional critical size of the raceway groove is the raceway groove of premeasuring Depth；Analysis first picture obtains the tangent expression formula of the first angle, is specially：Measure first picture The sidewall width of middle electron beam oblique projection, according to the sidewall width of measurement and the channel depth of premeasuring to first angle just Cut and be indicated the tangent expression formula for obtaining first angle；The analysis second picture obtains the tangent expression formula of the second angle, is specially：Measure the second picture The sidewall width of middle electron beam oblique projection, according to the sidewall width of measurement and the channel depth of premeasuring to second angle just Cut and be indicated the tangent expression formula for obtaining second angle.
- 4. according to the method described in claim 3, it is characterized in that, the first angle is α, electricity in first picture is measured The sidewall width of beamlet oblique projection is L1；The second angle is θ, measures electron beam oblique projection in the second picture Sidewall width is L2；Differential seat angle between the first angle α and the second angle are θ is γ, the raceway groove of the premeasuring Depth representing is H；The tangent expression formula of the first angle is：Tan α=L1/H；The tangent expression formula of the second angle is：Tan θ=L2/H.According to the tangent expression formula of the first angle and the tangent expression formula of the second angle, the raceway groove of premeasuring is derived Depth H=L1L2tan γ/(L2-L1tan γ).
- 5. according to the method described in claim 1, it is characterized in that, when electron beam is incident from the top of raceway groove side, ditch is injected During the bottom of road opposite side, the inclination angle of electron beam is critical inclination angle, and the depth-to-width ratio of corresponding raceway groove is maximum depth-to-width ratio.
- 6. according to the method described in claim 1, it is characterized in that, the method be also applied to etching high-aspect-ratio deep hole, The three-dimensional critical size of deep trouth and boss measures.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659246A (en) * | 2018-11-15 | 2019-04-19 | 长江存储科技有限责任公司 | A kind of measurement method of opening inclination and the preparation method of three-dimensional storage |
| CN111199895A (en) * | 2020-01-02 | 2020-05-26 | 长江存储科技有限责任公司 | Method, device, server and readable storage medium for measuring channel |
| CN112863980A (en) * | 2021-01-05 | 2021-05-28 | 长江存储科技有限责任公司 | Calibration method and calibration device for characteristic dimension scanning electron microscope machine |
| CN114295080A (en) * | 2021-12-30 | 2022-04-08 | 长江存储科技有限责任公司 | Method and apparatus for measuring semiconductor device, and storage medium |
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| CN114295080B (en) * | 2021-12-30 | 2023-12-01 | 长江存储科技有限责任公司 | Method and device for measuring semiconductor device and storage medium |
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