CN206546821U - Photo-sensitive cell and camera device - Google Patents
Photo-sensitive cell and camera device Download PDFInfo
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- CN206546821U CN206546821U CN201720111310.XU CN201720111310U CN206546821U CN 206546821 U CN206546821 U CN 206546821U CN 201720111310 U CN201720111310 U CN 201720111310U CN 206546821 U CN206546821 U CN 206546821U
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Abstract
The application provides a kind of photo-sensitive cell and camera device, to improve light receiving efficiency, and then improves shooting frame per second.In the application, photo-sensitive cell includes：Substrate and the grid on substrate, the grid include：Photosensitive door, the transmission gate adjacent with photosensitive door, the collection door adjacent with transmission gate and the signal adjacent with collecting door read point；Wherein, photosensitive door includes at least two nested photosensitive areas successively, is nested in the voltage applied on the photosensitive area of internal layer and is more than the voltage for being nested in and being applied on the photosensitive area of outer layer；The voltage applied on transmission gate is more than the voltage applied in photosensitive door on any photosensitive area, collects the voltage applied on door and is more than the voltage applied on transmission gate.Technical scheme, can improve light receiving efficiency, and then improve shooting frame per second.
Description
Technical Field
The present disclosure relates to semiconductor technologies, and particularly to a photosensitive device and an image capturing apparatus.
Background
With the proliferation of technologies such as AR (Augmented Reality), VR (Virtual Reality), gesture recognition, etc., the requirements for the scale of the optical signal receiving array of the ranging sensor in the 3D TOF (Time of Flight) imaging device are increasing. The distance measuring sensor is used for converting the distance between the distance measuring sensor and a shot object by calculating the phase difference between light emission and reflection to generate depth information and form 3D imaging.
However, if the optical signal receiving Array size is merely increased, for example, a 3D TOF camera device with the optical signal receiving Array size of QVGA (Quarter Video Graphics Array), the frame rate is lowered, and a frame rate that is too low cannot meet the capturing requirement for the motion of the imaging object.
SUMMERY OF THE UTILITY MODEL
In view of the above, embodiments of the present disclosure provide a photosensitive element and an image capturing apparatus, so as to improve the photosensitive efficiency and further improve the image capturing frame rate.
Some embodiments of the present application provide a photosensitive element, including: the gate structure comprises a substrate and a gate positioned on the substrate, wherein the gate comprises: the system comprises a photosensitive gate, a transmission gate adjacent to the photosensitive gate, a collection gate adjacent to the transmission gate and a signal reading point adjacent to the collection gate; wherein,
the photosensitive gate comprises at least two photosensitive areas which are sequentially nested, and the voltage applied to the photosensitive area nested in the inner layer is greater than the voltage applied to the photosensitive area nested in the outer layer;
the voltage applied to the transmission gate is larger than that applied to any photosensitive area in the photosensitive gate, and the voltage applied to the collection gate is larger than that applied to the transmission gate.
In one embodiment of the present application, the photosensitive gate may include a first photosensitive region and a second photosensitive region; the second photosensitive region may include a vein and a handle; the vein-shaped part is nested in the first light sensing area, and the vein-shaped part extends out of the first light sensing area to form the handle part; the transmission gate may include a first transmission gate and a second transmission gate; the first transmission gate and the second transmission gate are respectively positioned on two sides of the handle part;
the collection gate may include a first collection gate and a second collection gate; the first collection gate is adjacent to the first transfer gate and the second collection gate is adjacent to the second transfer gate; the signal readout point may include a first signal readout point and a second signal readout point; the first signal readout point is adjacent to the first collection gate; the second signal readout point is adjacent to the second collection gate.
In one embodiment of the present application, the pulse sequence of the pulse-shaped portion may be a pinnate pulse.
In one embodiment of the present application, the pulse-shaped portions may include main, side and thready pulses; the main vein is along the longitudinal extension of first light sensing district, the side vein is the main vein is along the horizontal extension of first light sensing district forms, the thready vein is the side vein is along the longitudinal extension of first light sensing district forms.
In an embodiment of the present application, the first photosensitive region, the second photosensitive region, the transfer gate, and the collection gate may be P-type doped, and doping concentrations are sequentially decreased; or the first photosensitive region, the second photosensitive region, the transmission gate and the collection gate can be doped in an N type, and the doping concentration is increased in sequence; or the first photosensitive area, the second photosensitive area, the transmission gate and the collection gate can be in the trend of decreasing the P-type doping concentration and increasing the N-type doping concentration in sequence.
In one embodiment of the present application, the photosensitive gate may include a third photosensitive area and a fourth photosensitive area nested within the third photosensitive area; wherein the fourth photosensitive region is in a pulse shape; the fourth photosensitive area may include a main vein and a side vein; the main pulse extends along the longitudinal direction of the third photosensitive area, and the side pulse is formed by extending the main pulse along the transverse direction of the third photosensitive area; the main vein penetrates through the third photosensitive area, the boundary of the first end of the main vein is flush with the first boundary of the third photosensitive area, the boundary of the second end of the main vein is flush with the second boundary of the third photosensitive area, and the first boundary and the second boundary are opposite in position; the transmission gates may include a third transmission gate and a fourth transmission gate; the third transmission gate is adjacent to the first end and the fourth transmission gate is adjacent to the second end; the collecting doors comprise a third collecting door and a fourth collecting door; the third collection gate is adjacent to the third transfer gate and the fourth collection gate is adjacent to the fourth transfer gate; the signal readout point may include a third signal readout point and a fourth signal readout point; the third signal readout point is adjacent to the third collection gate; the fourth signal readout point is adjacent to the fourth collection gate.
In an embodiment of the present application, the third photosensitive region, the fourth photosensitive region, the transfer gate, and the collection gate may be P-type doped, and doping concentrations are sequentially decreased; or the third photosensitive region, the fourth photosensitive region, the transmission gate and the collection gate can be doped in an N type, and the doping concentration is increased in sequence; or the third photosensitive area, the fourth photosensitive area, the transmission gate and the collection gate can be in the trend of decreasing the P-type doping concentration and increasing the N-type doping concentration in sequence.
In one embodiment of the present application, the photosensitive gate may include a fifth photosensitive area, a sixth photosensitive area nested within the fifth photosensitive area, and a seventh photosensitive area; the seventh photosensitive region may include a guide portion and an end portion; the guide part is nested in the sixth light sensing area and extends out of the sixth light sensing area to form the end part; the transmission gates may include a fifth transmission gate and a sixth transmission gate; the fifth transmission gate and the sixth transmission gate are respectively positioned on two sides of the end part; the collection gate may include a fifth collection gate and a sixth collection gate; the fifth collection gate is adjacent to the fifth transfer gate, and the sixth collection gate is adjacent to the sixth transfer gate; the signal readout points may include a fifth signal readout point and a sixth signal readout point; the fifth signal readout point is adjacent to the fifth collection gate; the sixth signal readout point is adjacent to the sixth collection gate.
In one embodiment of the present application, the sixth photosensitive region may have a pulse shape.
In an embodiment of the present application, the pulse sequence of the sixth photosensitive region may be a pinnate pulse.
In one embodiment of the present application, the sixth photosensitive region may include main veins, side veins and fine veins; the main vein extends along the longitudinal direction of the fifth photosensitive area, the side vein is formed by extending the main vein along the transverse direction of the fifth photosensitive area, and the thready vein is formed by extending the side vein along the longitudinal direction of the fifth photosensitive area.
In an embodiment of the present application, the fifth photosensitive region, the sixth photosensitive region, the seventh photosensitive region, the transfer gate, and the collection gate may be P-type doped, and doping concentrations are sequentially reduced; or the fifth photosensitive region, the sixth photosensitive region, the seventh photosensitive region, the transmission gate and the collection gate can be doped in an N type, and the doping concentration is increased in sequence; or the fifth photosensitive area, the sixth photosensitive area, the seventh photosensitive area, the transmission gate and the collection gate can be in a trend of decreasing the P-type doping concentration and increasing the N-type doping concentration in sequence.
Some embodiments of the present application further provide an image pickup apparatus, including the photosensitive element.
The embodiment of the application achieves the main technical effects that: at least two photosensitive areas which are nested in sequence are arranged on the grid electrode, the voltage applied to the photosensitive area which is nested in the inner layer is larger than the voltage applied to the photosensitive area which is nested in the outer layer, therefore, when light irradiates on the photosensitive area, photo-generated signal charges in the substrate below the photosensitive area can rapidly move from the substrate below the outer layer to the substrate below the inner layer, and because the voltage applied to the transmission gate is larger than the voltage applied to any photosensitive area in the photosensitive gate, and the voltage applied to the collection gate is larger than the voltage applied to the transmission gate, the signal charges accumulated in the substrate below the innermost photosensitive area can rapidly move to the substrate below the collection gate through the substrate below the transmission gate so as to be read at a signal reading point. The technical scheme of this application can make the photoproduction signal charge in the substrate of light sensing district below can remove the substrate to collecting the door below fast when there is the light to shine the light sensing district, can improve sensitization efficiency, and then can improve the frame rate of making a video recording.
Drawings
FIG. 1 is a schematic structural diagram of a photosensitive element according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a potential distribution of a photosensitive element according to an exemplary embodiment of the present disclosure;
FIG. 3 is a schematic structural diagram of a photosensitive element shown in the second embodiment of the present application;
fig. 4 is a schematic structural diagram of a photosensitive element shown in the third embodiment of the present application.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It is to be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the present application. The word "if" as used herein may be interpreted as "at … …" or "when … …" or "in response to a determination", depending on the context.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Example one
The embodiment of this application provides a photosensitive element, includes: a substrate and a gate located on the substrate, the gate comprising: the system comprises a photosensitive gate, a transmission gate adjacent to the photosensitive gate, a collection gate adjacent to the transmission gate and a signal reading point adjacent to the collection gate; the photosensitive gate comprises at least two photosensitive areas which are sequentially nested, and the voltage applied to the photosensitive area nested in the inner layer is greater than the voltage applied to the photosensitive area nested in the outer layer; the voltage applied to the transmission gate is larger than that applied to any photosensitive area in the photosensitive gate, and the voltage applied to the collection gate is larger than that applied to the transmission gate.
When light irradiates the photosensitive region, photons with energy larger than the band gap of the semiconductor material of the substrate are absorbed by the semiconductor material, electron hole pairs are generated in the semiconductor body under the grid, majority of photons are repelled by the grid voltage, and minority of photons flow away through the substrate and are collected in the potential well to form signal charges. Since the signal charge in this application is generated by absorption of photons by the semiconductor material, it can also be referred to as photo-generated signal charge.
At least two photosensitive areas which are nested in sequence are arranged on the grid electrode, the voltage applied to the photosensitive area which is nested in the inner layer is larger than the voltage applied to the photosensitive area which is nested in the outer layer, therefore, when light irradiates on the photosensitive area, photo-generated signal charges in the substrate below the photosensitive area can rapidly move from the substrate below the outer layer to the substrate below the inner layer, and because the voltage applied to the transmission gate is larger than the voltage applied to any photosensitive area in the photosensitive gate, and the voltage applied to the collection gate is larger than the voltage applied to the transmission gate, the signal charges accumulated in the substrate below the innermost photosensitive area can rapidly move to the substrate below the collection gate through the substrate below the transmission gate so as to be read at a signal reading point. Like this, can make the photoproduction signal charge in the substrate of light sensing district below can remove to the substrate of collection door below fast when there is the light to shine the light sensing district, can improve sensitization efficiency, and then can improve the frame rate of making a video recording, simultaneously, sensitization efficiency can improve and can also make the photosensitive element can be applicable to the low pressure scene.
Referring to fig. 1, in the present embodiment, the photosensitive gate may include a first photosensitive region GM1 and a second photosensitive region GM 2; the second photosensitive area comprises a vein-shaped part GM21 and a handle part GM 22; the vein-shaped part GM21 is nested in the first photosensitive area GM1, and the vein-shaped part GM21 extends out of the first photosensitive area GM1 to form a handle part GM 22; the transmission gate comprises a first transmission gate G1 and a second transmission gate G2; the first transmission gate G1 and the second transmission gate G2 are respectively positioned at two sides of the handle GM 22; the collection doors include a first collection door IG1 and a second collection door IG 2; a first collection gate IG1 is adjacent to the first transfer gate G1, and a second collection gate IG2 is adjacent to the second transfer gate G2; the signal reading points comprise a first signal reading point Read1 and a second signal reading point Read 2; the first signal Read1 is adjacent to the first collection gate IG 1; the second signal Read2 is adjacent to the second collection gate IG 2.
In this embodiment, the pulse sequence of the pulse-shaped portion GM21 is a pinnate pulse. Specifically, the pulse-shaped part GM21 includes a main pulse GM211, a side pulse GM212, and a thready pulse GM 213; the main vein GM211 extends along the longitudinal direction of the first photosensitive area GM1, the side vein GM212 is formed by extending the main vein along the transverse direction of the first photosensitive area GM1, and the thready vein GM213 is formed by extending the side vein along the longitudinal direction of the first photosensitive area GM 1. Thus, the vein portion GM21 makes extensive and deep contact with the first photosensitive region GM 1.
When light is irradiated to the photosensitive area, since the vein portion GM21 is in extensive and deep contact with the first photosensitive area GM1, photo-generated signal charges in the substrate under the first photosensitive area GM1 can move faster and be collected in the substrate under the second photosensitive area GM2 through the vein portion GM21, and at the same time, photo-generated signal charges in the substrate under the second photosensitive area GM2 also move fast into the substrate under the transfer gate through the handle portion GM22, and photo-generated signal charges in the substrate under the transfer gate also move fast into the substrate under the collection gate. The vein-shaped portion GM21 of the second photosensitive region GM2 may enable photo-generated signal charges in the substrate below the first photosensitive region GM1 to be collected more quickly into the substrate below the second photosensitive region GM2, which is beneficial to further improving the photosensitive efficiency.
Alternatively, the first photosensitive region GM1, the second photosensitive region GM2, the transfer gate, and the collection gate may be P-type doped, and the doping concentration is sequentially decreased. For example, in practical applications, the first photosensitive region GM1 and the second photosensitive region GM2 may be P + + type gates, the doping concentration of the first photosensitive region GM1 is greater than that of the second photosensitive region GM2, the transfer gate may be a P + type gate, and the doping concentration of the collection gate may be a P type gate. In practical applications, the first photosensitive region GM1 and the second photosensitive region GM2 may also be P + -type gates, the doping concentration of the first photosensitive region GM1 is greater than that of the second photosensitive region GM2, the doping concentration of the transfer gate may be P-type gates, and the doping concentration of the collection gate may be P-type gates. In this way, energy band distortion may be generated at the boundary between the first photosensitive region GM1 and the second photosensitive region GM2, the boundary between the second photosensitive region GM2 and the transfer gate, and the boundary between the transfer gate and the collection gate, so that the potentials at the first photosensitive region GM1, the second photosensitive region GM2, the transfer gate, and the collection gate may have a trend of smooth gradual change, specifically referring to fig. 2, that is, the potential change on the transfer path of the signal charge 21 has a trend of smooth gradual change, and further, noise may be reduced.
Alternatively, the first photosensitive region GM1, the second photosensitive region GM2, the transfer gate, and the collection gate may be doped N-type, and the doping concentration is sequentially increased. For example, in practical applications, the first photosensitive region GM1 and the second photosensitive region GM2 may be N-type gates, the doping concentration of the first photosensitive region GM1 is less than that of the second photosensitive region GM2, the transfer gate may be N-type gates, and the doping concentration of the collection gate may be N + -type gates. For example, in practical applications, the first photosensitive region GM1 and the second photosensitive region GM2 may be N-type gates, the doping concentration of the first photosensitive region GM1 is less than that of the second photosensitive region GM2, the transfer gate may be an N + -type gate, and the doping concentration of the collection gate may be an N + + -type gate. In this way, energy band distortion may be generated at the boundary between the first photosensitive region GM1 and the second photosensitive region GM2, the boundary between the second photosensitive region GM2 and the transfer gate, and the boundary between the transfer gate and the collection gate, so that the potentials at the first photosensitive region GM1, the second photosensitive region GM2, the transfer gate, and the collection gate may have a trend of smooth gradual change, specifically referring to fig. 2, that is, the potential change on the signal charge transfer path has a trend of smooth gradual change, and further, noise may be reduced.
Optionally, the first photosensitive region GM1, the second photosensitive region GM2, the transfer gate, and the collection gate sequentially show a trend of decreasing P-type doping concentration and increasing N-type doping concentration. For example, in practical applications, the first photosensitive region GM1 and the second photosensitive region GM2 may be P + + type gates, the doping concentration of the first photosensitive region GM1 is greater than that of the second photosensitive region GM2, the transfer gate may be a P + type gate, and the doping concentration of the collection gate may be an N type gate. For example, in practical applications, the first photosensitive region GM1 and the second photosensitive region GM2 may also be P + -type gates, the doping concentration of the first photosensitive region GM1 is greater than that of the second photosensitive region GM2, the transfer gate may be an N + -type gate, and the doping concentration of the collection gate may be an N + + -type gate. In this way, energy band distortion may be generated at the boundary between the first photosensitive region GM1 and the second photosensitive region GM2, the boundary between the second photosensitive region GM2 and the transfer gate, and the boundary between the transfer gate and the collection gate, so that the potentials at the first photosensitive region GM1, the second photosensitive region GM2, the transfer gate, and the collection gate may have a trend of smooth gradual change, that is, the potential change on the signal charge transfer path may have a trend of smooth gradual change, and further, noise may be reduced.
The main technical effects achieved by the embodiment are as follows: when light irradiates the photosensitive area, the photo-generated signal charges in the substrate below the photosensitive area can be rapidly moved to the substrate below the collecting door, so that the photosensitive efficiency can be improved, the camera shooting frame rate can be improved, and meanwhile, the photosensitive element can be suitable for low-voltage scenes.
Example two
The second embodiment of the present application provides a photosensitive element. The second embodiment is substantially the same as the first embodiment, and the main differences are as follows: the nested form of the photosensitive gate is different, and the position distribution of the transmission gate, the collection gate and the signal reading point is different, so that the embodiment of the application is enriched.
Referring to fig. 3, the photo gate includes a third photo-sensing area GM3 and a fourth photo-sensing area GM4 nested in the third photo-sensing area GM 3; wherein, the fourth photosensitive area GM4 is in a vein shape; the fourth photosensitive area GM4 includes a main vein GM41 and a side vein GM 42; the main vein GM41 extends along the longitudinal direction of the third photosensitive area GM3, and the side vein GM42 is formed by extending the main vein GM41 along the transverse direction of the third photosensitive area GM 3; the main vein GM41 penetrates through the third photosensitive area GM3, the boundary of the first end of the main vein GM41 is flush with the first boundary of the third photosensitive area GM3, the boundary of the second end of the main vein GM41 is flush with the second boundary of the third photosensitive area GM3, wherein the first boundary is opposite to the second boundary; the transmission gates comprise a third transmission gate G3 and a fourth transmission gate G4; the third transmission gate G3 is adjacent to the first end, and the fourth transmission gate G4 is adjacent to the second end; the collection gates include a third collection gate IG3 and a fourth collection gate IG 4; a third collection gate IG3 is adjacent to the third transfer gate G3, and a fourth collection gate IG4 is adjacent to the fourth transfer gate G4; the signal reading points comprise a third signal reading point Read3 and a fourth signal reading point Read 4; the third signal Read3 is adjacent to the third collection gate IG 3; the fourth signal Read4 is adjacent to the fourth collection gate IG 4.
Optionally, the third photosensitive region GM3, the fourth photosensitive region GM4, the transfer gate, and the collection gate are doped P-type, and the doping concentrations are sequentially decreased. For example, in practical applications, the third photosensitive region GM3 and the fourth photosensitive region GM4 may be P + + type gates, the doping concentration of the third photosensitive region GM3 is greater than that of the fourth photosensitive region GM4, the doping concentration of the transfer gate may be P + type gates, and the doping concentration of the collection gate may be P type gates. In practical applications, the third photosensitive region GM3 and the fourth photosensitive region GM4 may also be P + -type gates, the doping concentration of the third photosensitive region GM3 is greater than that of the fourth photosensitive region GM4, the doping concentration of the transfer gate may be P-type gates, and the doping concentration of the collection gate may be P-type gates. In this way, energy band distortion may be generated at the boundary between the third photosensitive region GM3 and the fourth photosensitive region GM4, the boundary between the fourth photosensitive region GM4 and the transfer gate, and the boundary between the transfer gate and the collection gate, so that the potentials at the third photosensitive region GM3, the fourth photosensitive region GM4, the transfer gate, and the collection gate may have a trend of smooth gradual change, that is, the potential change on the signal charge transfer path may have a trend of smooth gradual change, and further, noise may be reduced.
Optionally, the third photosensitive region GM3, the fourth photosensitive region GM4, the transfer gate, and the collection gate are doped N-type, and the doping concentration is sequentially increased. For example, in practical applications, the third photosensitive region GM3 and the fourth photosensitive region GM4 may be N-type gates, the doping concentration of the third photosensitive region GM3 is less than that of the fourth photosensitive region GM4, the doping concentration of the transfer gate may be N-type gates, and the doping concentration of the collection gate may be N + -type gates. For example, in practical applications, the third photosensitive region GM3 and the fourth photosensitive region GM4 may be N-type gates, the doping concentration of the third photosensitive region GM3 is less than that of the fourth photosensitive region GM4, the transfer gate may be an N + -type gate, and the doping concentration of the collection gate may be an N + + -type gate. In this way, energy band distortion may be generated at the boundary between the third photosensitive region GM3 and the fourth photosensitive region GM4, the boundary between the fourth photosensitive region GM4 and the transfer gate, and the boundary between the transfer gate and the collection gate, so that the potentials at the third photosensitive region GM3, the fourth photosensitive region GM4, the transfer gate, and the collection gate may have a trend of smooth gradual change, that is, the potential change on the signal charge transfer path may have a trend of smooth gradual change, and further, noise may be reduced.
Optionally, the third photosensitive region GM3, the fourth photosensitive region GM4, the transfer gate, and the collection gate sequentially show a trend of decreasing the P-type doping concentration and increasing the N-type doping concentration. For example, in practical applications, the third photosensitive region GM3 and the fourth photosensitive region GM4 may be P + + type gates, the doping concentration of the third photosensitive region GM3 is greater than that of the fourth photosensitive region GM4, the doping concentration of the transfer gate may be P + type gates, and the doping concentration of the collection gate may be N type gates. For example, in practical applications, the third photosensitive region GM3 and the fourth photosensitive region GM4 may also be P + -type gates, the doping concentration of the third photosensitive region GM3 is greater than that of the fourth photosensitive region GM4, the transfer gate may be an N + -type gate, and the doping concentration of the collection gate may be an N + + -type gate. In this way, energy band distortion may be generated at the boundary between the third photosensitive region GM3 and the fourth photosensitive region GM4, the boundary between the fourth photosensitive region GM4 and the transfer gate, and the boundary between the transfer gate and the collection gate, so that the potentials at the third photosensitive region GM3, the fourth photosensitive region GM4, the transfer gate, and the collection gate may have a trend of smooth gradual change, that is, the potential change on the signal charge transfer path may have a trend of smooth gradual change, and further, noise may be reduced.
The main technical effects achieved by the embodiment are as follows: when light irradiates the photosensitive area, the photo-generated signal charges in the substrate below the photosensitive area can be rapidly moved to the substrate below the collecting door, so that the photosensitive efficiency can be improved, the camera shooting frame rate can be improved, and meanwhile, the photosensitive element can be suitable for low-voltage scenes.
EXAMPLE III
The third embodiment of the application provides a photosensitive element. The third embodiment is substantially the same as the first embodiment, and the main differences are as follows: in one embodiment, the photo-sensing gate includes two photo-sensing regions; in the third embodiment, the photosensing gate comprises three photosensing areas, which enriches the embodiments of the application.
Referring to fig. 4, the photo gate includes a fifth photo-sensing region G5, a sixth photo-sensing region G6 nested in the fifth photo-sensing region G5, and a seventh photo-sensing region GM 7; the seventh photosensitive area GM7 includes a guide GM71 and an end GM 72; the guide GM71 is nested in the sixth light sensing region G6, and the guide GM71 extends outward of the sixth light sensing region G6 to form an end GM 72. The transmission gates comprise a fifth transmission gate G5 and a sixth transmission gate G6; the fifth transmission gate G5 and the sixth transmission gate G6 are respectively positioned at two sides of the end GM 72; the collection doors include a fifth collection door IG5 and a sixth collection door IG 6; a fifth collection gate IG5 is adjacent to the fifth transfer gate G5, and a sixth collection gate IG6 is adjacent to the sixth transfer gate G6; the signal reading points include a fifth signal reading point Read5 and a sixth signal reading point Read 6; the fifth signal Read5 is adjacent to the fifth collection gate IG 5; the sixth signal Read point Read6 is adjacent to the sixth collection gate IG 6.
In the present embodiment, the sixth photosensitive region G6 has a pulse shape. Specifically, the pulse sequence of the sixth photosensitive region G6 is a pinnate pulse. The sixth photosensitive area G6 includes a main vein GM211, a side vein GM212, and a thready vein GM 213; the main vein GM211 extends along the longitudinal direction of the fifth photosensitive area G5, the side vein GM212 is formed by extending the main vein GM211 along the transverse direction of the fifth photosensitive area G5, and the thready vein GM213 is formed by extending the side vein GM212 along the longitudinal direction of the fifth photosensitive area G5.
Optionally, the fifth photosensitive region G5, the sixth photosensitive region G6, the seventh photosensitive region GM7, the transfer gate, and the collection gate are P-type doped, and the doping concentration decreases sequentially. For example, in practical applications, the fifth photosensitive region G5, the sixth photosensitive region G6, and the seventh photosensitive region GM7 may be P + + type gates, the doping concentration of the fifth photosensitive region G5 is greater than that of the sixth photosensitive region G6, the doping concentration of the sixth photosensitive region G6 is greater than that of the seventh photosensitive region GM7, the transfer gate may be a P + -type gate, and the doping concentration of the collection gate may be a P-type gate. Thus, energy band distortion may be generated at the boundary between the fifth photosensitive region G5 and the sixth photosensitive region G6, the boundary between the sixth photosensitive region G6 and the seventh photosensitive region GM7, the boundary between the seventh photosensitive region GM7 and the transfer gate, and the boundary between the transfer gate and the collection gate, so that the potentials at the fifth photosensitive region G5, the sixth photosensitive region G6, the seventh photosensitive region GM7, the transfer gate, and the collection gate may have a smoothly gradually changing trend, that is, the potential variation on the signal charge transfer path may have a smoothly changing trend, and further, noise may be reduced.
Optionally, the fifth photosensitive region G5, the sixth photosensitive region G6, the seventh photosensitive region GM7, the transfer gate, and the collection gate are doped N-type, and the doping concentration is sequentially increased. For example, in practical applications, the fifth photosensitive region G5, the sixth photosensitive region G6, and the seventh photosensitive region GM7 may be N-type gates, the doping concentration of the fifth photosensitive region G5 is less than that of the sixth photosensitive region G6, the doping concentration of the sixth photosensitive region G6 is less than that of the seventh photosensitive region GM7, the transfer gate may be an N-type gate, and the doping concentration of the collection gate may be an N + -type gate. Thus, energy band distortion may be generated at the boundary between the fifth photosensitive region G5 and the sixth photosensitive region G6, the boundary between the sixth photosensitive region G6 and the seventh photosensitive region GM7, the boundary between the seventh photosensitive region GM7 and the transfer gate, and the boundary between the transfer gate and the collection gate, so that the potentials at the fifth photosensitive region G5, the sixth photosensitive region G6, the seventh photosensitive region GM7, the transfer gate, and the collection gate may have a smoothly gradually changing trend, that is, the potential variation on the signal charge transfer path may have a smoothly changing trend, and further, noise may be reduced.
Optionally, the fifth photosensitive region G5, the sixth photosensitive region G6, the seventh photosensitive region GM7, the transfer gate, and the collection gate sequentially show a trend of decreasing P-type doping concentration and increasing N-type doping concentration. For example, in practical applications, the fifth photosensitive region G5, the sixth photosensitive region G6, and the seventh photosensitive region GM7 may be P + + type gates, the doping concentration of the fifth photosensitive region G5 is greater than that of the sixth photosensitive region G6, the doping concentration of the sixth photosensitive region G6 is greater than that of the seventh photosensitive region GM7, the transfer gate may be a P + type gate, and the doping concentration of the collection gate may be an N type gate. Thus, energy band distortion may be generated at the boundary between the fifth photosensitive region G5 and the sixth photosensitive region G6, the boundary between the sixth photosensitive region G6 and the seventh photosensitive region GM7, the boundary between the seventh photosensitive region GM7 and the transfer gate, and the boundary between the transfer gate and the collection gate, so that the potentials at the fifth photosensitive region G5, the sixth photosensitive region G6, the seventh photosensitive region GM7, the transfer gate, and the collection gate may have a smoothly gradually changing trend, that is, the potential variation on the signal charge transfer path may have a smoothly changing trend, and further, noise may be reduced.
The main technical effects achieved by the embodiment are as follows: when light irradiates the photosensitive area, the photo-generated signal charges in the substrate below the photosensitive area can be rapidly moved to the substrate below the collecting door, so that the photosensitive efficiency can be improved, the camera shooting frame rate can be improved, and meanwhile, the photosensitive element can be suitable for low-voltage scenes.
Example four
Corresponding to the embodiment of the photosensitive element, the application also provides an embodiment of the image pickup device.
An embodiment four of the present application provides a photosensitive element including the embodiment one, two, or three.
The main technical effects achieved by the embodiment are as follows: can be when there being light irradiation to sensitization district, make the substrate that the photogenic signal charge in the substrate of sensitization district below can remove to the collection door below fast, can improve sensitization efficiency, and then can improve the frame rate of making a video recording, simultaneously, sensitization efficiency can improve and can also make the photosensitive element can be applicable to the low pressure scene.
In the present application, the above embodiments may be complementary to each other without conflict. The above-described embodiments of the apparatus are merely illustrative, and the units described as separate parts may or may not be physically separate, and the parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the scheme of the application. One of ordinary skill in the art can understand and implement it without inventive effort.
The present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed.
Claims (13)
1. A photosensitive element comprising a substrate and a gate on the substrate, wherein the gate comprises: the system comprises a photosensitive gate, a transmission gate adjacent to the photosensitive gate, a collection gate adjacent to the transmission gate and a signal reading point adjacent to the collection gate; wherein,
the photosensitive gate comprises at least two photosensitive areas which are sequentially nested, and the voltage applied to the photosensitive area nested in the inner layer is greater than the voltage applied to the photosensitive area nested in the outer layer;
the voltage applied to the transmission gate is larger than that applied to any photosensitive area in the photosensitive gate, and the voltage applied to the collection gate is larger than that applied to the transmission gate.
2. The photosensitive element of claim 1, wherein the photosensitive gate comprises a first photosensitive region and a second photosensitive region;
the second photosensitive area comprises a vein-shaped part and a handle part; the vein-shaped part is nested in the first light sensing area, and the vein-shaped part extends out of the first light sensing area to form the handle part;
the transmission gate comprises a first transmission gate and a second transmission gate; the first transmission gate and the second transmission gate are respectively positioned on two sides of the handle part;
the collecting door comprises a first collecting door and a second collecting door; the first collection gate is adjacent to the first transfer gate and the second collection gate is adjacent to the second transfer gate;
the signal reading points comprise a first signal reading point and a second signal reading point; the first signal readout point is adjacent to the first collection gate; the second signal readout point is adjacent to the second collection gate.
3. A photosensitive element according to claim 2, wherein the pulse sequence of the pulse-shaped portion is a pinnate pulse.
4. A photosensitive element according to claim 3, wherein the pulse-like portions include main pulses, side pulses, and thready pulses;
the main vein is along the longitudinal extension of first light sensing district, the side vein is the main vein is along the horizontal extension of first light sensing district forms, the thready vein is the side vein is along the longitudinal extension of first light sensing district forms.
5. The photosensitive element according to claim 2, wherein the first photosensitive region, the second photosensitive region, the transfer gate, and the collection gate are doped P-type, and the doping concentration decreases in sequence; or,
the first photosensitive area, the second photosensitive area, the transmission gate and the collection gate are doped in an N type, and the doping concentration is increased in sequence;
or,
the first photosensitive area, the second photosensitive area, the transmission gate and the collection gate are in turn in the trend of decreasing P-type doping concentration and increasing N-type doping concentration.
6. A photosensitive element according to claim 1, wherein said photosensitive gate comprises a third photosensitive area and a fourth photosensitive area nested within said third photosensitive area; wherein the fourth photosensitive region is in a pulse shape;
the fourth photosensitive area comprises a main pulse and a side pulse; the main pulse extends along the longitudinal direction of the third photosensitive area, and the side pulse is formed by extending the main pulse along the transverse direction of the third photosensitive area;
the main vein penetrates through the third photosensitive area, the boundary of the first end of the main vein is flush with the first boundary of the third photosensitive area, the boundary of the second end of the main vein is flush with the second boundary of the third photosensitive area, and the first boundary and the second boundary are opposite in position;
the transmission gate comprises a third transmission gate and a fourth transmission gate; the third transmission gate is adjacent to the first end and the fourth transmission gate is adjacent to the second end;
the collecting doors comprise a third collecting door and a fourth collecting door; the third collection gate is adjacent to the third transfer gate and the fourth collection gate is adjacent to the fourth transfer gate;
the signal readout points comprise a third signal readout point and a fourth signal readout point; the third signal readout point is adjacent to the third collection gate; the fourth signal readout point is adjacent to the fourth collection gate.
7. The photosensitive element according to claim 6, wherein the third photosensitive region, the fourth photosensitive region, the transfer gate, and the collection gate are doped P-type, and the doping concentration decreases in sequence; or,
the third photosensitive area, the fourth photosensitive area, the transmission gate and the collection gate are doped in an N type, and the doping concentration is increased in sequence;
or,
the third photosensitive area, the fourth photosensitive area, the transmission gate and the collection gate are in the trend of decreasing P-type doping concentration and increasing N-type doping concentration in sequence.
8. The photosensitive element of claim 1, wherein the photosensitive gate comprises a fifth photosensitive area, a sixth photosensitive area nested within the fifth photosensitive area, and a seventh photosensitive area;
the seventh photosensitive area comprises a guide part and an end part; the guide part is nested in the sixth light sensing area and extends out of the sixth light sensing area to form the end part;
the transmission gate comprises a fifth transmission gate and a sixth transmission gate; the fifth transmission gate and the sixth transmission gate are respectively positioned on two sides of the end part;
the collecting doors comprise a fifth collecting door and a sixth collecting door; the fifth collection gate is adjacent to the fifth transfer gate, and the sixth collection gate is adjacent to the sixth transfer gate;
the signal reading points comprise a fifth signal reading point and a sixth signal reading point; the fifth signal readout point is adjacent to the fifth collection gate; the sixth signal readout point is adjacent to the sixth collection gate.
9. The photosensitive element of claim 8, wherein the sixth photosensitive region is vein-shaped.
10. The photosensitive element according to claim 9, wherein the pulse sequence of the sixth photosensitive region is a pinnate pulse.
11. The photosensitive element of claim 10, wherein the sixth photosensitive region comprises a main vein, a lateral vein, and a thready vein;
the main vein extends along the longitudinal direction of the fifth photosensitive area, the side vein is formed by extending the main vein along the transverse direction of the fifth photosensitive area, and the thready vein is formed by extending the side vein along the longitudinal direction of the fifth photosensitive area.
12. The photosensitive element according to claim 8, wherein the fifth photosensitive region, the sixth photosensitive region, the seventh photosensitive region, the transfer gate, and the collection gate are doped P-type, and the doping concentration decreases in sequence; or,
the fifth photosensitive area, the sixth photosensitive area, the seventh photosensitive area, the transmission gate and the collection gate are doped in an N type, and the doping concentration is increased in sequence;
or,
the fifth photosensitive area, the sixth photosensitive area, the seventh photosensitive area, the transmission gate and the collection gate are in the trend of decreasing P-type doping concentration and increasing N-type doping concentration in sequence.
13. An image pickup apparatus comprising the photosensitive element according to any one of claims 1 to 12.
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| CN201720111310.XU CN206546821U (en) | 2017-02-06 | 2017-02-06 | Photo-sensitive cell and camera device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720111310.XU CN206546821U (en) | 2017-02-06 | 2017-02-06 | Photo-sensitive cell and camera device |
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| CN206546821U true CN206546821U (en) | 2017-10-10 |
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