CN107990852B - Three-dimensional critical size measurement method based on scanning electron microscope - Google Patents
Three-dimensional critical size measurement method based on scanning electron microscope Download PDFInfo
- Publication number
- CN107990852B CN107990852B CN201711139423.1A CN201711139423A CN107990852B CN 107990852 B CN107990852 B CN 107990852B CN 201711139423 A CN201711139423 A CN 201711139423A CN 107990852 B CN107990852 B CN 107990852B
- Authority
- CN
- China
- Prior art keywords
- angle
- channel
- picture
- expression formula
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
Abstract
The three-dimensional critical size measurement method based on scanning electron microscope that the invention discloses a kind of, belongs to technical field of semiconductors.The described method includes: electron beam to be tilted to first angle incidence channel along the vertical direction, channel picture is shot by scanning electron microscope and obtains the first picture, the first picture of analysis obtains the tangent expression formula of first angle；Electron beam is tilted to second angle incidence channel along the vertical direction, second angle and first angle differ, and shoot channel picture by scanning electron microscope and obtain second picture, analysis second picture obtains the tangent expression formula of second angle；The three-dimensional critical size of channel is calculated according to the tangent expression formula of the tangent expression formula of first angle and second angle.In the present invention, the quick online nondestructive measurement of the three-dimensional critical size of high-aspect-ratio is realized, can not only be saved time and cost, shortens the R&D cycle, and can satisfy large-scale production requirement.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of three-dimensional critical sizes based on scanning electron microscope
Measurement method.
Background technique
With the continuous development to integrated level and storage capacity requirement, three-dimensional storage comes into being.Three-dimensional storage is
A kind of novel product based on flat memory, main characteristics are that planar structure is converted to stereochemical structure, to greatly save
Chip area.In the R&D process of three-dimensional storage, to ensure efficiency of research and development and product yield, its high-aspect-ratio three-dimensional is closed
The On-line rapid measurement of key size is most important.Currently, generalling use atomic force microscope (Atomic Force
Microscope, AFM), optical critical dimension (Optical Critical Dimension, OCD), transmission electron microscope
The measurement of the methods of (Transmission Electron Microscope, TEM) progress high-aspect-ratio three-dimensional critical size；So
And atomic force microscope measurement method therein, measuring speed are slow, thus be not suitable for the online quick survey of semiconductor technology
Amount；Optical critical dimension measurement method therein, the modeling time is long, need to consume more time cost；Transmission electricity therein
Sub- microscopy measurements are destructive measurement, cannot achieve on-line measurement.The measurement method of existing critical size is also
One kind, i.e. scanning electron microscope (Scanning Electron Microscope, SEM) measurement method can be realized quickly
On-line measurement, but be but only limitted to the measurement of plane characteristic at present, the height letter of channel depth or boss etc. can not be obtained
Breath.As it can be seen that seeking a kind of measurement method of quickly and effectively high-aspect-ratio three-dimensional critical size, to adapt to the fast of three-dimensional storage
Speed development is necessary；In other words, it can be realized the fast on-line measurement of plane characteristic based on scanning electron microscope, then
The measurement for how applying it to high-aspect-ratio three-dimensional critical size is also necessary.
Summary of the invention
To solve the deficiencies in the prior art, the present invention provides a kind of three-dimensional critical size survey based on scanning electron microscope
Amount method, comprising:
Electron beam is tilted to first angle incidence channel along the vertical direction, channel picture is shot by scanning electron microscope
The first picture is obtained, first picture is analyzed and obtains the tangent expression formula of the first angle；
Electron beam is tilted to second angle incidence channel along the vertical direction, the second angle and the first angle are not
Deng, by scanning electron microscope shoot channel picture obtain second picture, analyze the second picture and obtain described second jiao
The tangent expression formula of degree；
The channel is calculated according to the tangent expression formula of the tangent expression formula of the first angle and the second angle
Three-dimensional critical size.
Optionally, the first angle and the second angle are all larger than 0 degree less than 10 degree.
Optionally, the three-dimensional critical size of the channel is the channel depth of premeasuring；
Analysis first picture obtains the tangent expression formula of the first angle, specifically: measurement described first
The sidewall width of electron beam oblique projection in picture, according to the sidewall width of measurement and the channel depth of premeasuring to first angle
Tangent be indicated to obtain the tangent expression formula of first angle；
The analysis second picture obtains the tangent expression formula of the second angle, specifically: measurement described second
The sidewall width of electron beam oblique projection in picture, according to the sidewall width of measurement and the channel depth of premeasuring to second angle
Tangent be indicated to obtain the tangent expression formula of second angle.
Optionally, the first angle is α, and the sidewall width for measuring electron beam oblique projection in first picture is
L1；The second angle is θ, and the sidewall width for measuring electron beam oblique projection in the second picture is L2；Described first jiao
Degree α and the second angle are that the differential seat angle between θ is γ, and the channel depth of the premeasuring is expressed as H；
The tangent expression formula of the first angle are as follows: tan α=L1/H；
The tangent expression formula of the second angle are as follows: tan θ=L2/H.
According to the tangent expression formula of the tangent expression formula of the first angle and the second angle, premeasuring is derived
Channel depth H=L1L2tan γ/(L2-L1tan γ).
Optionally, when the top of electron beam from channel side is incident, when injecting the bottom of the channel other side, electron beam inclines
Oblique angle is critical inclination angle, and the depth-to-width ratio of corresponding channel is maximum depth-to-width ratio.
Optionally, the method is also applied to etch the three-dimensional critical size of the deep hole of high-aspect-ratio, deep trouth and boss
Measurement.
The present invention has the advantages that
In the present invention, it is based on scanning electron microscope, and combine image-forming principle and trigonometric function that can quickly and effectively count
The three-dimensional critical size for calculating high-aspect-ratio realizes quick online nondestructive measurement, can not only save time and cost,
Shorten the R&D cycle, and can satisfy large-scale production requirement.
Detailed description of the invention
By reading the following detailed description of the preferred embodiment, various other advantages and benefits are common for this field
Technical staff will become clear.The drawings are only for the purpose of illustrating a preferred embodiment, and is not considered as to the present invention
Limitation.And throughout the drawings, the same reference numbers will be used to refer to the same parts.In the accompanying drawings:
Attached drawing 1 is a kind of three-dimensional critical size measurement method process based on scanning electron microscope provided by the invention
Figure；
Attached drawing 2 is the channel picture of scanning electron microscope shooting when electron beam tilts first angle incidence；
Attached drawing 3 is incident schematic diagram when electron beam tilts first angle；
Attached drawing 4 is incident isoboles when electron beam tilts first angle；
Attached drawing 5 is enlarged drawing when electron beam tilts first angle incidence between L1, H, α；
Attached drawing 6 is the channel picture of scanning electron microscope shooting when electron beam tilts second angle incidence；
Attached drawing 7 is incident schematic diagram when electron beam tilts second angle；
Attached drawing 8 is incident isoboles when electron beam tilts second angle；
Attached drawing 9 is enlarged drawing when electron beam tilts second angle incidence between L2, H, θ；
Attached drawing 10 be electron beam with critical inclination angle incidence when schematic diagram；
The channel picture of scanning electron microscope shooting when attached drawing 11 is electron beam non-oblique incidence；
Schematic diagram when attached drawing 12 is electron beam non-oblique incidence；
Isoboles when attached drawing 13 is electron beam non-oblique incidence.
Specific embodiment
The illustrative embodiments of the disclosure are more fully described below with reference to accompanying drawings.Although showing this public affairs in attached drawing
The illustrative embodiments opened, it being understood, however, that may be realized in various forms the disclosure without the reality that should be illustrated here
The mode of applying is limited.It is to be able to thoroughly understand the disclosure on the contrary, providing these embodiments, and can be by this public affairs
The range opened completely is communicated to those skilled in the art.
Embodiment according to the present invention provides a kind of three-dimensional critical size measurement side based on scanning electron microscope
Method, as shown in Figure 1, comprising:
Electron beam is tilted to first angle incidence channel along the vertical direction, channel picture is shot by scanning electron microscope
The first picture is obtained, the first picture of analysis obtains the tangent expression formula of first angle；
Electron beam is tilted to second angle incidence channel along the vertical direction, second angle and first angle differ, by sweeping
It retouches electron microscope shooting channel picture and obtains second picture, analysis second picture obtains the tangent expression formula of second angle；
The three-dimensional critical size of channel is calculated according to the tangent expression formula of the tangent expression formula of first angle and second angle.
Embodiment according to the present invention, first angle and second angle are all larger than 0 degree less than 10 degree.
Embodiment according to the present invention, the three-dimensional critical size of channel are the channel depth of premeasuring；
Accordingly, analysis states the first picture and obtains the tangent expression formula of first angle, specifically: electricity in the first picture of measurement
The sidewall width of beamlet oblique projection, just the cutting into first angle according to the sidewall width of measurement and the channel depth of premeasuring
Row indicates to obtain the tangent expression formula of first angle；
Accordingly, analysis second picture obtains the tangent expression formula of second angle, specifically: electronics in measurement second picture
The sidewall width of beam oblique projection carries out the tangent of second angle according to the sidewall width of measurement and the channel depth of premeasuring
Expression obtains the tangent expression formula of second angle.
It may be noted that ground, since actual conditions lower channel is not substantially vertical, but there are certain inclination angle, the present invention
In, to make design have generality, defining electron beam, inclined angle is that trench sidewalls and electron beam are incident along the vertical direction
Angle between direction.And first angle can be greater than second angle, might be less that second angle；The corresponding electricity of first angle
The inclined direction of the inclined direction of beamlet electron beam corresponding with second angle may be the same or different.In the present invention, it is
Convenient for description, second angle is less than with first angle, and the inclined direction of electron beam twice is identical, be for being tilted to the right into
Row explanation.
Specifically, as shown in Figures 2 to 5, when electron beam is tilted to the right first angle α incidence channel along the vertical direction,
Since channel left bottom is stopped by channel left side top, thus the information of channel left bottom can not be collected into；Therefore, In
In the picture shown in Fig. 2 shot using scanning electron microscope, first bright line in left side is the information of channel left side top,
Article 2 bright line is the information of channel bottom right side, and Article 3 bright line is the information of channel right hand top；At this point, Article 2 bright line
The distance between Article 3 bright line L1 is the sidewall width of electron beam oblique projection, can be measured from picture；It will be pre-
The channel depth of measurement is expressed as H, then has the tangent expression formula of first angle: tan α=L1/H.
As shown in Figures 6 to 9, when electron beam is tilted to the right second angle θ incidence channel along the vertical direction, also due to
Channel left bottom is stopped by channel left side top, thus can not be collected into the information of channel left bottom；Therefore, in Fig. 6
Shown in the picture that is shot using scanning electron microscope, first bright line in left side is the information of channel left side top, the
Two bright lines are the information of channel bottom right side, and Article 3 bright line is the information of channel right hand top；At this point, Article 2 bright line with
The distance between Article 3 bright line L2 is the sidewall width of electron beam oblique projection, can be measured from picture；Due to
Second angle θ is greater than first angle α, thus L2 is significantly than L1 wide；The channel depth of premeasuring is expressed as H, then has
The tangent expression formula of two angles: tan α=L1/H.
Further, in the present embodiment, the differential seat angle between second angle and first angle is expressed as γ, it is corresponding
Ground calculates the three-dimensional critical size of channel according to the tangent expression formula of the tangent expression formula of first angle and second angle, specifically
Are as follows: according to the tangent expression formula of the tangent expression formula of first angle and second angle, derive the channel depth H=of premeasuring
L1L2tanγ/(L2-L1tanγ)。
Further, in the present embodiment, incident from the top of channel side when electron beam, inject the channel other side
When bottom, the inclination angle of electron beam is critical inclination angle, and the depth-to-width ratio of corresponding channel is maximum depth-to-width ratio.
Specifically, incident from the left side top of channel with electron beam in the present invention, inject for the bottom right side of channel into
Row explanation, as shown in Figure 10, trench bottom figure will not generate at this time, thus cannot be distinguished side wall boundary, at this time electron beam
Inclination angle be critical inclination angle β, the sidewall width of electron beam oblique projection is L, and the depth of channel is H, corresponding channel
Depth-to-width ratio is maximum depth-to-width ratio；At this point, the tangent expression formula of critical inclination angle β are as follows: tan β=L/H, then the maximum of channel is deep wide
Than H/L=1/tan β.
More specifically, the present invention in, due to being limited by board, when critical inclination angle β be 10 degree, the work of board
State is relatively stable, the maximum depth-to-width ratio H/L=1/tan10=5.73 of corresponding channel.In some embodiments, critical to incline
Oblique angle β can also be 14 degree, and the working condition of board is not very stable at this time.It may be noted that ground, the knot bigger for depth-to-width ratio
Structure, corresponding critical inclination angle can be smaller.
In the present invention, as shown in Figure 11 to Figure 13, when electron beam does not tilt and injects channel, since electron beam is approximate and side
Wall direction is parallel, and the secondary electron of boundary is influenced electronics ratio that is smaller, thus being collected into side wall boundary by surrounding
Other regions are more, so that the boundary of white is generated, and other regions are relatively darker.It can be seen from the figure that electron beam not
In the case that inclination is injected, since electron beam approximation is parallel with sidewall direction, and the profile of invisible side wall, it can only see white
Boundary；Only after electron beam tilts certain angle, side wall can just be projected out one fixed width；In the present invention not according to this
Together, by making electron beam inclination obtain corresponding two width values twice, and the differential seat angle of front and back inclined twice is combined, calculated
The three-dimensional critical size of channel, i.e. depth.
Embodiment according to the present invention, the present invention in three-dimensional critical size measurement method be not limited to measurement channel three
Critical size is tieed up, the three-dimensional critical size measurement in deep hole, deep trouth and boss of etching high-aspect-ratio etc. is extended also to.
In the present invention, it is based on scanning electron microscope, and combine image-forming principle and trigonometric function that can quickly and effectively count
The three-dimensional critical size for calculating high-aspect-ratio realizes quick online nondestructive measurement, can not only save time and cost,
Shorten the R&D cycle, and can satisfy large-scale production requirement.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by anyone skilled in the art,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of the claim
Subject to enclosing.
Claims (5)
1. a kind of three-dimensional critical size measurement method based on scanning electron microscope characterized by comprising
Electron beam is tilted to first angle incidence channel along the vertical direction, channel picture is shot by scanning electron microscope and is obtained
First picture analyzes first picture and obtains the tangent expression formula of the first angle；
Electron beam is tilted to second angle incidence channel along the vertical direction, the second angle and the first angle differ, and lead to
Overscanning electron microscope shooting channel picture obtains second picture, analyzes the second picture and is obtaining the second angle just
Cut expression formula；
The three-dimensional of the channel is calculated according to the tangent expression formula of the tangent expression formula of the first angle and the second angle
Critical size；
The three-dimensional critical size of the channel is the channel depth of premeasuring；
Analysis first picture obtains the tangent expression formula of the first angle, specifically: measurement first picture
The sidewall width of middle electron beam oblique projection, according to the sidewall width of measurement and the channel depth of premeasuring to first angle just
Cut the tangent expression formula for being indicated to obtain first angle；
The analysis second picture obtains the tangent expression formula of the second angle, specifically: measure the second picture
The sidewall width of middle electron beam oblique projection, according to the sidewall width of measurement and the channel depth of premeasuring to second angle just
Cut the tangent expression formula for being indicated to obtain second angle.
2. the method according to claim 1, wherein the first angle and the second angle are all larger than 0 degree
Less than 10 degree.
3. measuring electricity in first picture the method according to claim 1, wherein the first angle is α
The sidewall width of beamlet oblique projection is L1；The second angle is θ, measures electron beam oblique projection in the second picture
Sidewall width is L2；The first angle α and the second angle are that the differential seat angle between θ is γ, the channel of the premeasuring
Depth representing is H；
The tangent expression formula of the first angle are as follows: tan α=L1/H；
The tangent expression formula of the second angle are as follows: tan θ=L2/H；
According to the tangent expression formula of the tangent expression formula of the first angle and the second angle, the channel of premeasuring is derived
Depth H=L1L2tan γ/(L2-L1tan γ).
4. the method according to claim 1, wherein injecting ditch when the top of electron beam from channel side is incident
When the bottom of the road other side, the inclination angle of electron beam is critical inclination angle, and the depth-to-width ratio of corresponding channel is maximum depth-to-width ratio.
5. the method according to claim 1, wherein the method be also applied to etching high-aspect-ratio deep hole,
The measurement of the three-dimensional critical size of deep trouth and boss.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711139423.1A CN107990852B (en) | 2017-11-16 | 2017-11-16 | Three-dimensional critical size measurement method based on scanning electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711139423.1A CN107990852B (en) | 2017-11-16 | 2017-11-16 | Three-dimensional critical size measurement method based on scanning electron microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107990852A CN107990852A (en) | 2018-05-04 |
| CN107990852B true CN107990852B (en) | 2019-11-26 |
Family
ID=62031484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711139423.1A Active CN107990852B (en) | 2017-11-16 | 2017-11-16 | Three-dimensional critical size measurement method based on scanning electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107990852B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659246B (en) * | 2018-11-15 | 2020-12-01 | 长江存储科技有限责任公司 | Method for measuring opening inclination and method for manufacturing three-dimensional memory |
| CN111199895B (en) * | 2020-01-02 | 2022-07-15 | 长江存储科技有限责任公司 | Method, device, server and readable storage medium for measuring channel |
| CN112863980B (en) * | 2021-01-05 | 2022-04-12 | 长江存储科技有限责任公司 | Calibration method and calibration device for characteristic dimension scanning electron microscope machine |
| CN114295080B (en) * | 2021-12-30 | 2023-12-01 | 长江存储科技有限责任公司 | Method and device for measuring semiconductor device and storage medium |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04323545A (en) * | 1991-04-22 | 1992-11-12 | Nec Corp | Method of total reflection x-ray diffraction microscopy |
| CN1296287A (en) * | 1999-11-05 | 2001-05-23 | 日本电气株式会社 | Device for checking semiconductor device |
| KR20040070680A (en) * | 2003-02-04 | 2004-08-11 | 아남반도체 주식회사 | The measurement method of sti slope in semiconductor |
| CN101581571A (en) * | 2009-06-19 | 2009-11-18 | 武汉钢铁(集团)公司 | Method for measuring pit depth with scanning electronic microscope |
| CN102854208A (en) * | 2012-09-25 | 2013-01-02 | 中国科学院高能物理研究所 | Ray back scattering imaging system for discriminating depth information |
| CN107024483A (en) * | 2015-10-13 | 2017-08-08 | 弗兰克公司 | The three-dimensional inspection of optical communications link |
-
2017
- 2017-11-16 CN CN201711139423.1A patent/CN107990852B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04323545A (en) * | 1991-04-22 | 1992-11-12 | Nec Corp | Method of total reflection x-ray diffraction microscopy |
| CN1296287A (en) * | 1999-11-05 | 2001-05-23 | 日本电气株式会社 | Device for checking semiconductor device |
| KR20040070680A (en) * | 2003-02-04 | 2004-08-11 | 아남반도체 주식회사 | The measurement method of sti slope in semiconductor |
| CN101581571A (en) * | 2009-06-19 | 2009-11-18 | 武汉钢铁(集团)公司 | Method for measuring pit depth with scanning electronic microscope |
| CN102854208A (en) * | 2012-09-25 | 2013-01-02 | 中国科学院高能物理研究所 | Ray back scattering imaging system for discriminating depth information |
| CN107024483A (en) * | 2015-10-13 | 2017-08-08 | 弗兰克公司 | The three-dimensional inspection of optical communications link |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107990852A (en) | 2018-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107990852B (en) | Three-dimensional critical size measurement method based on scanning electron microscope | |
| CN105264635B (en) | Reference design for inclination or graze grinding operation using charged particle beam | |
| CN104809456B (en) | A kind of Three-dimensional target recognition method based on two valued description symbol | |
| CN109765254A (en) | Pattern measurement device and measurement method | |
| CN105547166B (en) | A kind of development machine driving window rapid detection method based on two dimensional laser scanning | |
| JP6272487B2 (en) | Charged particle beam apparatus, simulation method, and simulation apparatus | |
| CN110276732A (en) | A kind of mountain area point cloud cavity restorative procedure for taking features of terrain line feature into account | |
| CN101469973B (en) | Measuring method | |
| US11301983B2 (en) | Measuring height difference in patterns on semiconductor wafers | |
| CN109472802A (en) | A kind of surface grid model construction method constrained certainly based on edge feature | |
| CN105590338A (en) | Three-dimensional reconstruction method for image of scanning electron microscope | |
| CN103728666A (en) | Method for determining replacement speed of static correction middle reference plane | |
| CN109783842A (en) | A kind of ray detection method and system based on voxel data | |
| US6771418B2 (en) | Method and apparatus for extracting three-dimensional spacial data of object using electron microscope | |
| KR102369780B1 (en) | Charged particle beam device, cross-sectional shape estimation program | |
| CN106524998A (en) | Method for measuring tunnel linear exposed structural surface based on three-dimensional laser scanning technique | |
| CN107292924B (en) | The characteristic automatic recognition method for the laser groove that a kind of pair of laser processing is formed | |
| Manzoor | Light trapping in monocrystalline silicon solar cells using random upright pyramids | |
| WO2022267687A1 (en) | Micro-nano deep trench structure fast measurement method on basis of white light interference | |
| CN108050991A (en) | Method based on scanning electron microscopy measurement sidewall draft angles | |
| Zhang et al. | Advanced characterisation of black silicon surface topography with 3D PFIB-SEM | |
| Kuchler et al. | Reconstruction of the surface topography of randomly textured silicon | |
| CN107356606A (en) | The detection method of semiconductor wafer dislocation density | |
| CN112347901A (en) | Rock mass analysis method based on three-dimensional laser scanning technology | |
| CN105938137B (en) | The detection method and detection means of the polysilicon indices of crystallographic plane |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |