CN107958939A - One kind nitridation Gallium base heterojunction Schottky diode structures - Google Patents
One kind nitridation Gallium base heterojunction Schottky diode structures Download PDFInfo
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- CN107958939A CN107958939A CN201610907273.3A CN201610907273A CN107958939A CN 107958939 A CN107958939 A CN 107958939A CN 201610907273 A CN201610907273 A CN 201610907273A CN 107958939 A CN107958939 A CN 107958939A
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 86
- 239000002184 metal Substances 0.000 claims abstract description 86
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 238000000407 epitaxy Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 20
- 150000002739 metals Chemical class 0.000 claims description 8
- 238000007654 immersion Methods 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 7
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 51
- 229910002601 GaN Inorganic materials 0.000 description 47
- 238000005516 engineering process Methods 0.000 description 9
- 230000002441 reversible effect Effects 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910015844 BCl3 Inorganic materials 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 206010036590 Premature baby Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
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- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
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- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to one kind to nitrogenize Gallium base heterojunction Schottky diode structures, including following characteristics：The wide-band gap material (such as barrier layer AlGaN) nitrogenized in Gallium base heterojunction materials forms I type hetero-junctions with small gap material GaN, epi-layer surface has the anode based on Schottky contacts and the cathode based on Ohmic contact, wherein at least there is a p type island region domain to be placed near its circumference on anode metal contact hole lower epi layer surface, this p type island region domain is extended under nitridation Gallium surfaces from semiconductor epitaxial layer surface, depth is more than 0.1 micron, it is Schottky contacts that schottky metal pole (i.e. anode) is contacted with non-p-type area epitaxy layer surface, extremely interior some metal contact with p type island region domain of schottky metal is Ohmic contact, this contact can effectively connect away the hole in breakdown in caused electron hole pair and device is safely used.
Description
Technical field
The present invention relates to one kind to nitrogenize Gallium base heterojunction Schottky diode structures, is nitrogenized more particularly to one kind
The high electron mobility Schottky diode semiconductor device structure of Gallium base heterojunctions.
Background technology
Carborundum and gallium nitride are known as third generation semiconductor, they will be that semiconductor brings technical revolution.Before,
These wide bandgap semiconductors have been developed several ten years, and 1 up to 2002 or so, and company of Infineon releases the Schottky of 600V
Diode, announces that carborundum formally starts to provide product with practical value.Afterwards, grid-control field-effect silicon carbide transistor is also opened
Begin to launch, it is also more and more more to be engaged in the related manufacturer of silicon carbide power device, from the point of view of product technology aspect, at that time
The carborundum of phase is more ripe than gallium nitride, research and development paces, what 2008 or so, some companies such as U.S. but gallium nitride does not stop
The IR of state, the Transform in the U.S., Japanese Toshiba also begin to provide the sample of gallium nitride power device in succession.Afterwards, the U.S.
EPC, Japanese Fujitsu, Panasonic, Rohm, then has the companies such as ST, Onsemi and Ti also to release one after another their nitridation Gallium
Product.Under the promotion of these companies, the whole ecological environment for nitrogenizing Gallium power devices is greatly improved, from the extension of gallium nitride,
Technique makes, and encapsulation, drive integrated circult and application etc. all reach its maturity.It is generally believed that from the point of view of present situation, hit
Wear wide band gap semiconductor device market of the voltage at 1200 volts or less, it will be that GaN HEMT are leading, more than 1200 volts
It is then the world of carborundum.
Gallium nitride (GaN) is semiconductor material with wide forbidden band, has the breakdown electric field characteristic of bigger and high electronics saturation than silicon
Drift velocity, generally speaking, GaN are the excellent materials that high frequency and high-power semiconductor devices can be manufactured with Come.
Gallium nitride (GaN) base heterojunction material is the high breakdown electric field for having continued GaN material, high electronics saturation drift velocity
The advantages that.AlGaN/GaN is that the primary structure in GaN base heterojunction material represents, and wherein AlGaN is wide-band gap material, and GaN is
Arrowband material, both form I type hetero-junctions, and two-dimensional electron gas (2DEG) is located at the GaN sides of heterojunction boundary, are partly to lead at present
Hot spot in body material and device research field.
Since gallium nitride (GaN) single crystalline substrate is prohibitively expensive and immature, general (GaN) base device is without using vertical junction
Structure, but use transversary.The structure of high voltage lateral device manufacture with nitridation Gallium (GaN) generally as shown in Figure 1, due to
The doping process prematurity of gallium nitride, especially p-type are adulterated, it is not easy to are controlled, so far always, the structure of Fig. 1 does not have business yet
The product of change, in contrast, with AlGaN/GaN semi-conducting material forms into hetero-junctions, so as to form high electron mobility crystal
(HEMT) device is managed, its basic structure is as shown in Fig. 2, compared to other semi-conducting materials, such as AlGaAs/GaAs, AlGaN/GaN
The HEMT device that material manufacture goes out has more preferable electric property, because it is III group nitrogen to manufacture the wurtzite structure GaN of device with what
The hexagonal crystallographic texture of compound, is that a kind of band gap is wide and with suppressing electric, ferroelectric semi-conducting material, this crystal structure lacks
Inversion symmetry, is presented very strong polarity effect, including piezoelectricity and spontaneous polarization, piezoelectric modulus than other iii-vs,
More than big 1 order of magnitude of Group II-VI semiconductor material, spontaneous polarization strength is also very big, due to III-nitride material energy gap phase
Poor great disparity, heterostructure interface conduction band form deep quantum well there are huge energy bandmatch.Based on strong polarization inducing action and huge
Energy bandmatch, group III-nitride heterostructure interface can form the high concentration two-dimensional electron gas system of the last one quantum localization.Such as
Typical AlGaN/GaN heterojunction structures, its AlGaN potential barrier middle piezoelectricity pole intensity is tradition AlGaAs/GaAs heterojunction structures
In as many as 5 times, high-performance two-dimensional electron gas has extremely important technology application value.AlGaN/GaN systems are as an allusion quotation
The GaN base heterojunction structure of type, in microwave power, high-temperature electronic device and military field etc. have particularly important application value.
Power device can generally bear high anti-bias voltage and big forward conduction electric current, and different power devices has
Different specifications, its anti-bias voltage that can bear and forward current are different.Longitudinal power device is in regional structure
Active area and termination environment can be divided into, termination environment is usually the edge in periphery followed by source region.Lateral power is without eventually
Petiolarea, only active area, active area flow to the flow region of low-voltage electrode for electric current from high-voltage electrode, so, work as transverse direction
When device is in reverse bias, active area (i.e. from high-voltage electrode to the region between low-voltage electrode) needs to be used for bearing from height
Voltage electrode has to the anti-bias voltage between low-voltage electrode and takes this into account, transversal device is in design except reducing electric conduction
Resistance, reduces parasitic capacitance etc., also to take into account the requirement of breakdown voltage, electric from high-voltage electrode to low-voltage in reverse bias
Need to form depletion region between pole, to bear the voltage of reverse bias, to bear the consumption that suitable anti-bias voltage just wants suitable width
Area to the greatest extent, in depleted region, the electric charge between semi-conducting material will balance, and require to remain almost without net charge when exhausting, no
Then depletion region just can not spread Come and bear to apply the voltage of reverse bias thereon.
Current gallium nitride power device, has from low pressure (being less than 100 volts) to the D-mode of high pressure (200 volts to 1200 volts)
Field-effect transistor, or E-mode field-effect transistors, or the Schottky diode of high pressure (400 volts to 1200 volts), are all
HEMT structure.The structure of these devices is simple, for carborundum, the preamble technique of the AlGaN/GaN HEMT of gallium nitride
It is relatively easy to, preamble technique is before referring to including cuing off to chip after the completion of epitaxial film materials.General now is normal
HEMT structure is not have to doped N-type area, and without doped p-type area, the representative cross-sections structure of device is as shown in Figure 2.This
The conducting resistance and switching characteristic of a little devices are all better than silicon device very much, have the excellent spy of typical third generation semiconductor devices
Property.But these devices have a significant drawback, be exactly whether source electrode, grid still drain, neither one electrode can be effectively fast
Receive fastly between AlGaN/GaN in hole caused by breakdown.Under some applications, especially drive motor when, device
It is to be in breakdown conditions that can not avoid moment, in breakdown, substantial amounts of electron hole pair can be produced in device, in high pressure
Under biasing, electrons are gone to drain electrode and are connect away by the drain electrode absorption of Ohmic contact, and Kong Xue They are rested on around grid and source electrode, because
Hole all can not efficiently and effectively be connect away for the grid and source electrode of Fig. 2, under high pressure reverse bias, these rest on grid and source electrode
The hole of surrounding can cause device to burn failure.Current many nitridation Gallium devices are to avoid to have the application that breakdown occurs, it
Be mainly used as the application of radio-frequency power amplifier or PFC (PFC), but nitrogenizing Gallium power devices is finally
Overcome this problem, otherwise, its application prospect can be restricted greatly.
The content of the invention
The shortcomings that disclosed AlGaN/GaN HEMT structure can be to avoid the above, no matter device can be made because of dynamic
The breakdown occurred during caused Hai Shi Static states, caused hole can effectively be connect away during breakdown, will not rest on device
Inner, so that device can safely be used in the application that some have breakdown to occur, such as the application of drive motor.
Basic device principle used in the present invention is to make breakdown generation attached around schottky metal pole (anode A node)
Closely, avoid breakdown from occurring to early in some local zonules, then collect breakdown through the p type island region domain being placed on around this
These holes are reached anode metal by the empty cave And of caused electron hole centering.The present invention can pass through ion in technique and note
Enter or plasma immersion ion implantation or outer layer growth method are introduced p type island region domain on gallium nitride surface, can pass through in design
Domain and technological process make field plate and p type island region domain is placed on appropriate place, and field version can make electric field concentrate on device not too much
One local small range and cause premature breakdown, be placed on the appropriate position of near its circumference on anode metal contact hole lower epi layer surface
P type island region domain can help to be distributed with effectively making electric fields uniform, and can help reception breakdown caused by electronics sky six
The hole of centering.
General nitridation Gallium base heterojunctions Schottky diode structure includes the broad stopband in nitridation Gallium base heterojunction materials
Material (such as barrier layer AlGaN) forms I type hetero-junctions with small gap material GaN, and two-dimensional electron gas (2DEG) is located at hetero-junctions circle
, wherein at least there is a schottky metal pole i.e. anode (Anode) in the GaN sides in face in nitridation Gallium epi-layer surfaces, Schottky
Metal at metal pole forms Schottky metal contact with nitridation Gallium epi-layer surfaces, and contact berrier makes schottky metal pole just
To can absorb the electronics that is launched from cathode (Cathode) during biasing, when reverse bias can stop electronics enter anode so as to
So that Schottky diode is the diode component of single carrier, the principal carrier of N-diode is electronics, wherein cathode
Metal with nitridation Gallium epitaxial layers be Ohmic contact, implementation the present invention have kinds of schemes, be the main step for implementing each scheme below
Suddenly.
Scheme one：As shown in Figure 3 and Figure 4, there is field plate in schottky metal pole (i.e. anode) place of device, this field plate causes
Electric field energy near anode is more uniformly distributed, and is wherein at least had a p type island region domain to be placed under schottky metal pole and is nitrogenized
At Gallium epi-layer surfaces, this p type island region domain is extended under nitridation Gallium surfaces from semiconductor epitaxial layer surface, and it is micro- that depth is more than 0.1
Meter, the contact portion of metal and p type island region domain at schottky metal pole connects for the Ohmic contact of metal/p type island region or close to ohm
Touch, contact with non-p-type area epitaxy layer surface and to be metal/nitridation Gallium cap layers or metal/AlGaN layer or nitrogenize Gallium being Xiao Te
Base contacts.
Scheme two：As shown in figure 5, it is similar with scheme one, it is a difference in that in addition to the p type island region domain (1) described in scheme one,
An at least p type island region domain (11), which is placed under schottky metal pole, nitrogenizes near its circumference at Gallium epi-layer surfaces, this p type island region
Domain is extended under nitridation Gallium surfaces from semiconductor epitaxial layer surface, and depth is more than 0.1 micron, this p type island region domain (11) not by
Any electrode is connected to, this p type island region domain (11) is primarily used to make the electric field near Schottky contacts to be more uniformly distributed, and reduces
Schottky barrier is subject to the pressure of internal field, so that leakage current is reduced in reverse bias.
Scheme three：As shown in Figure 6 and Figure 7, it is similar with scheme one, it is a difference in that at least part of area in p type island region
Domain, wherein epitaxial layer nitridation Gallium on epitaxial layer AlGaN or gallium nitride layer/AlGaN epitaxial layers be disposed of so that
Schottky metal extremely in some metal p type island region nitridation Gallium epi-layer surfaces, and and p-type can be directly contacted in this region
The contact portion in region is for the Ohmic contact of metal/p type island region or close to Ohmic contact, metal and non-p-type area epitaxy layer surface
It is metal/nitridation Gallium cap layers or metal/AlGaN layer to contact or nitridation Gallium is Schottky contacts.
Scheme four：As shown in Figure 8 and Figure 9, each scheme is similar with more than, is the gold in schottky metal in place of main difference
Contact of the category with semiconductor is not exclusively.Some extremely interior metal (9) of schottky metal in this scheme, this part metals
(9) contact with p type island region domain is for the Ohmic contact of metal/p type island region or close to Ohmic contact, this part metals (9) and epitaxial layer
The contact in the non-p type island region domain in surface is the Ohmic contact of metal/N-type region or close to Ohmic contact, schottky metal pole another part
The contact of (i.e. non-(9) part) with epi-layer surface is schottky metal/semiconductor contact, in other words, has three in this scheme four
The different metal/semiconductor contact of kind：Metal forms the Ohmic contact of metal/P-type semiconductor with p type island region domain or is connect close to ohm
Touch, this contact is used as connecing away the hole in electron hole pair caused by breakdown；Another kind is metal and the non-P of epi-layer surface
The contact in type region, this is the Ohmic contact of metal/N-type semiconductor or close to Ohmic contact, (anode during as forward conduction
For positive bias) injection electronics, carrier density when increase turns on, makes ducting capacity stronger；The third is metal and epitaxial layer table
The contact in the non-p type island region domain in face, this is the Schottky contacts of metal/N-type semiconductor, as the dominant touch of Schottky diode,
The electronics to come from emission of cathode can be absorbed in forward bias, when reverse bias can stop that electronics enters anode so that Xiao
Special based diode is the diode component of single carrier.
More than the p type island region of each scheme can also be used to make the buffer action between chip, can thus save as every
From the grooving step being used.
Brief description of the drawings
Attached drawing is used for providing a further understanding of the present invention, is used to explain the present invention together with embodiments of the present invention,
It is not construed as limiting the invention：
Fig. 1 is the cross-sectional of gallium nitride lateral device structure；
Fig. 2 is the cross-sectional for the nitridation Gallium base heterojunction Schottky diode structures for having GaN cap；
There is the cross-sectional of the nitridation Gallium base heterojunction Schottky diode structures in p type island region domain at Fig. 3 anodes；
There is the cross-sectional of the Schottky diode structure in p type island region domain at one Anodic of Fig. 4 schemes；
There is the cross-sectional of the Schottky diode structure in p type island region domain at two Anodic of Fig. 5 schemes；
There is the cross-sectional of the Schottky diode structure in p type island region domain at three Anodic of Fig. 6 schemes；
The cross-sectional of nitridation Gallium base heterojunction Schottky diode structures in Fig. 7 schemes three；
There is the cross-sectional of the Schottky diode structure in p type island region domain at four Anodic of Fig. 8 schemes；
The cross-sectional of nitridation Gallium base heterojunction Schottky diode structures in Fig. 9 schemes four；
Figure 10 is that the embodiment of the present invention completes the cross-sectional of all epitaxial layers；
Figure 11 is the cross-sectional that the embodiment of the present invention completes perforate etching on GaN cap/AlGaN/GaN；
Figure 12 is that the embodiment of the present invention completes the cross-sectional of p type island region on surface；
Figure 13 is that the embodiment of the present invention completes the cross-sectional of deposition cathode electrode metal.
Figure 14 is that the embodiment of the present invention completes the cross-sectional of Schottky electrode metal (anode).
Reference symbol table：
1 p type island region domain
2 AIN cushions
3 nitridation Gallium (GaN) epitaxial layers
4 AlGaN epitaxial layers
5 nitridation Gallium (GaN) cap layers
6 dielectric layers
7 anodes
8 cathodes
Part metals in 9 cathodes can form Ohmic contact with p type island region or N-type region
10 Sapphire Substrates
The 11 p type island region domains not being connected with any electrode
The type area of Resurf N in 12 nitridation Gallium (GaN) epitaxial layers in active area
Embodiment
The present invention can be used in the HEMT structure of various III nitrogen hetero-junctions, now lift a related laterally nitridation Gallium bases
Heterojunction schottky diode power device embodiments come introduce the present invention one of which application.Mainly introduced in embodiment
How the process of the one of which scheme (scheme one) of the present invention is used, and to what surface passivation layer, metal draws XIAN and wafer
The wear down of piece and etc. be omitted.
Embodiment：
As shown in Figure 10, obtained with MOCVD methods in Sapphire Substrate (0001) direction Epitaxial growth from substrate up
Include 200nm AIN cushions, the GaN layer of the unintentional doping of 3um, undoped barrier layer Al (0.25) Ga of 25nm successively
(0.75) GaN cap of the unintentional doping of N and 2.5nm.
As shown in figure 11, in GaN surfaces accumulation lithography coating, portion of epi is exposed using p type island region domain aperture mask version
The surface of layer, the perforate size width of p type island region domain aperture mask version is 0.1um to 3.0um, and hole shape can be various geometric graphs
Case such as square, circular and rectangle, then use sense coupling to GaN cap/AlGaN/GaN
(ICP) dry etching of technology, etching gas C12/BCl3, etches the epitaxial surface exposed, until exposing AlGaN bottoms
Under GaN layer Bei Ke Erosion fall minimum 0.1 micron of depth, then remove lithography coating.
As shown in figure 12, one layer of p-type epitaxial layer is grown with the epitaxial surface of MOCVD methods on substrate, thickness is more than
0.05 micron, P doping concentrations are higher than 1 × 1016/cm3, then inductive couple plasma is used using lithography coating and Yan Mo Ban And
The dry etching Ke Erosion of body etching (ICP) technology fall the p-type epitaxial layer beyond p type island region.
As shown in figure 13, in surface metallization medium layer, dielectric layer can be silicon nitride, silica etc., thickness of dielectric layers
It is 1000A between 5000A, in dielectric layer surface accumulation lithography coating, exposes certain media layer using contact hole mask version
Surface, then to dielectric layer use sense coupling (ICP) technology dry etching, etching gas C12/
BCl3, until exposing the p type island region domain GaN layer of dielectric layer bottom portion and partial GaN cap, then passes through electron beam evaporation
Method, by four layers of metal：The metal ohmic contact of Ti (200A)/Al (800A)/Ni (200A)/Au (1000A) compositions is evaporated to
Material structure surface, then removes unwanted metal by work stripping technology, only leaves required metal in contact hole, then pass through
850 DEG C, the quick thermal annealing process of 30 seconds, so that the metal in contact hole forms good Ohm contact electrode.
As shown in figure 14, in surface accumulation lithography coating, exposed using schottky metal pole (i.e. anode) aperture mask version
Go out the surface of certain media layer, the dry etching of sense coupling (ICP) technology is then used to dielectric layer, carve
Erosion gas is C12/BCl3, until exposing the GaN cap or partial AlGaN layer or partial N-type of dielectric layer bottom portion
GaN layer, then by electron beam evaporation method by the evaporation of metal of Ni (500A)/Al (2000A) composition to material structure surface,
Then unwanted metal is removed by work stripping technology, then the quick thermal annealing process through 500 DEG C, 30 seconds, so that connecing
Ni metals/epi-layer surface in contact hole forms good Schottky contacts.
Finally it should be noted that：It these are only the preferred embodiment of the present invention, be not intended to limit the invention, this hair
It is bright can be used for be related to manufacture various III nitrogen hetero-junctions HEMT device (for example, heterojunction field effect transistor (HEMT FET) or
Schottky diode), the present invention can be used for the semiconductor power discrete device for preparing 100V to 2000V, the embodiment of the present invention
It is to be made an explanation with N-type channel device, the present invention also can be used for P-type channel device, although being carried out with reference to embodiment to the present invention
Detailed description, for those skilled in the art, it still can be to the technical solution described in previous embodiment
Modify, or equivalent substitution is carried out to which part technical characteristic, but within the spirit and principles of the invention, institute
Any modification, equivalent substitution, improvement and etc. of work, should all be included in the protection scope of the present invention.
Claims (8)
1. one kind nitridation Gallium base heterojunction Schottky diode structures, including following characteristics：
1. an at least slice width forbidden band barrier layer AlGaN and small gap material GaN forms I type hetero-junctions, two-dimensional electron gas
(2DEG) is located at the GaN sides of heterojunction boundary, and the wherein thickness of broad stopband barrier layer AlGaN is 10nm to 50nm, low energy gap
Material GaN is unintentional doping, its thickness is 1um to 5um；
2. epi-layer surface has the anode based on Schottky contacts and the cathode based on Ohmic contact, schottky metal pole
There is field plate in (i.e. anode) place；
3. wherein at least having a p type island region domain to be placed under schottky metal pole nitrogenizes near its circumference at Gallium epi-layer surfaces；
4. the contact portion in metal at schottky metal pole and p type island region domain is for the Ohmic contact of metal/p type island region or close to ohm
Contact, contact with non-p-type area epitaxy layer surface and to be metal/nitridation Gallium cap layers or metal/AlGaN layer or nitrogenize Gallium being Xiao
Te Ji is contacted.
2. according to the p type island region domain described in claim 1 its (3), it is characterised in that the size width in the p type island region domain is
0.2um to 5.0um, extends under nitridation Gallium surfaces, depth is more than 0.1 micron from semiconductor epitaxial layer surface.
3. according to the p type island region domain described in claim 1 its (3), it is characterised in that the p type island region domain be in technique pass through from
Son injection plasma immersion ion implantation (Plasma Immersion Ion Implantation) or outer layer growth method
Formed.
4. one kind nitridation Gallium base heterojunction Schottky diode structures, including following characteristics：
1. an at least slice width forbidden band barrier layer AlGaN and small gap material GaN forms I type hetero-junctions, two-dimensional electron gas
(2DEG) is located at the GaN sides of heterojunction boundary, and the wherein thickness of broad stopband barrier layer AlGaN is 10nm to 50nm, low energy gap
Material GaN is unintentional doping, its thickness is 1um to 5um；
2. epi-layer surface has the anode based on Schottky contacts and the cathode based on Ohmic contact, schottky metal pole
There is field plate in (i.e. anode) place；
3. wherein at least have a p type island region domain (1) be placed under schottky metal pole nitrogenize Gallium epi-layer surfaces at around it is attached
Closely；
4. an at least p type island region domain (11), which is placed under schottky metal pole, nitrogenizes near its circumference at Gallium epi-layer surfaces,
This p type island region domain is extended under nitridation Gallium surfaces from semiconductor epitaxial layer surface, and depth is more than 0.1 micron, this p type island region domain (11)
It is not attached to any electrode；
5. the contact portion of the metal and p type island region domain (1) at schottky metal pole is the Ohmic contact or close of metal/p type island region
Ohmic contact, it is metal/nitridation Gallium cap layers or metal/AlGaN layer or nitridation Gallium to be contacted with non-p-type area epitaxy layer surface
It is Schottky contacts.
5. according to the p type island region domain described in claim 4 its (3) and (4), its size width is 0.2um to 5.0um, from semiconductor
Epi-layer surface is extended under nitridation Gallium surfaces, and depth is more than 0.1 micron, these p type island region domains are to pass through ion in technique
Inject plasma immersion ion implantation (Plasma Immersion Ion Implantation) or outer layer growth method shape
Into.
6. one kind nitridation Gallium base heterojunction Schottky diode structures, including following characteristics：
1. an at least slice width forbidden band barrier layer AlGaN and small gap material GaN forms I type hetero-junctions, two-dimensional electron gas
(2DEG) is located at the GaN sides of heterojunction boundary, and the wherein thickness of broad stopband barrier layer AlGaN is 10nm to 50nm, low energy gap
Material GaN is unintentional doping, its thickness is 1um to 5um；
2. epi-layer surface has the anode based on Schottky contacts and the cathode based on Ohmic contact, schottky metal pole
There is field plate in (i.e. anode) place；
3. wherein at least have a p type island region domain (1) be placed under schottky metal pole nitrogenize Gallium epi-layer surfaces at around it is attached
Closely；
4. the metal at schottky metal pole contacts with each other with the epi-layer surface under positive contact hole.
7. according to the p type island region domain described in claim 6 its (3), it is characterised in that the size width in the p type island region domain is
0.2um to 5.0um, extends under nitridation Gallium surfaces, depth is more than 0.1 micron, these p type island regions from semiconductor epitaxial layer surface
Domain is to pass through ion implanting or plasma immersion ion implantation (Plasma Immersion Ion Implantation) in technique
Or the formation of outer layer growth method.
8. the metal at schottky metal pole according to claim 6 its (4), it is characterised in that the Schottky gold
Belong to ohm that some metal (9) contact with the p type island region domain under positive contact hole in the metal at pole is metal/p type island region
Contact or close to Ohmic contact, the contact with the non-p type island region domain under positive contact hole of this part metals (9) is metal/N-type region
Ohmic contact or close to Ohmic contact, some metal and the non-P under positive contact hole in the metal at schottky metal pole
The contact in type region is schottky metal/semiconductor contact.
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| CN110707157A (en) * | 2019-11-12 | 2020-01-17 | 西安电子科技大学 | AlGaN/GaN Schottky barrier diode based on P + type guard ring structure and manufacturing method |
| CN110795902A (en) * | 2019-10-30 | 2020-02-14 | 中国科学院国家空间科学中心 | Calculation method and system of simulation model of Schottky diode |
| CN111211176A (en) * | 2020-01-14 | 2020-05-29 | 香港商莫斯飞特半导体有限公司 | Gallium nitride-based heterojunction integrated device structure and manufacturing method |
| CN114823851A (en) * | 2022-04-15 | 2022-07-29 | 晶通半导体(深圳)有限公司 | Gallium nitride reverse conducting transistor |
| CN114864656A (en) * | 2022-04-15 | 2022-08-05 | 晶通半导体(深圳)有限公司 | Gallium nitride schottky diode |
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