CN107949656A - 用于向基材的表面提供涂覆层的设备和方法 - Google Patents
用于向基材的表面提供涂覆层的设备和方法 Download PDFInfo
- Publication number
- CN107949656A CN107949656A CN201680049744.XA CN201680049744A CN107949656A CN 107949656 A CN107949656 A CN 107949656A CN 201680049744 A CN201680049744 A CN 201680049744A CN 107949656 A CN107949656 A CN 107949656A
- Authority
- CN
- China
- Prior art keywords
- base material
- staggeredly
- mesh
- reel
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20155629 | 2015-09-02 | ||
FI20155629 | 2015-09-02 | ||
PCT/FI2016/050592 WO2017037338A1 (en) | 2015-09-02 | 2016-08-30 | Apparatus and method for providing a coating to a surface of a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107949656A true CN107949656A (zh) | 2018-04-20 |
CN107949656B CN107949656B (zh) | 2020-07-03 |
Family
ID=58186739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680049744.XA Active CN107949656B (zh) | 2015-09-02 | 2016-08-30 | 用于向基材的表面提供涂覆层的设备和方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10214813B2 (zh) |
EP (1) | EP3344796B1 (zh) |
CN (1) | CN107949656B (zh) |
WO (1) | WO2017037338A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI125341B (en) * | 2012-07-09 | 2015-08-31 | Beneq Oy | Apparatus and method for treating substrate |
JP7285431B2 (ja) * | 2019-05-30 | 2023-06-02 | 住友金属鉱山株式会社 | 真空成膜装置と真空成膜方法 |
JP7285430B2 (ja) * | 2019-05-30 | 2023-06-02 | 住友金属鉱山株式会社 | 真空成膜装置と真空成膜方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020066409A1 (en) * | 2000-12-04 | 2002-06-06 | General Electric Company | Fiber coating method and reactor |
WO2003094228A1 (en) * | 2002-05-01 | 2003-11-13 | Sundew Technologies, Llc | Trench capacitor with enhanced capacity and method of fabrication same |
JP2008189957A (ja) * | 2007-02-02 | 2008-08-21 | Kobe Steel Ltd | 連続成膜装置 |
CN102712999A (zh) * | 2009-10-06 | 2012-10-03 | 欧瑞康太阳能(处贝区市)公司 | 涂覆基材的方法 |
CN103459665A (zh) * | 2011-03-29 | 2013-12-18 | 凸版印刷株式会社 | 卷绕成膜装置 |
CN104060240A (zh) * | 2014-07-11 | 2014-09-24 | 无锡格菲电子薄膜科技有限公司 | 一种生产二维纳米材料的水平式卷对卷装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8603195B2 (en) * | 2009-08-24 | 2013-12-10 | Applied Materials, Inc. | 3D approach on battery and supercapitor fabrication by initiation chemical vapor deposition techniques |
EP2481830A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition. |
-
2016
- 2016-08-30 CN CN201680049744.XA patent/CN107949656B/zh active Active
- 2016-08-30 US US15/751,566 patent/US10214813B2/en active Active
- 2016-08-30 EP EP16840881.3A patent/EP3344796B1/en active Active
- 2016-08-30 WO PCT/FI2016/050592 patent/WO2017037338A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020066409A1 (en) * | 2000-12-04 | 2002-06-06 | General Electric Company | Fiber coating method and reactor |
WO2003094228A1 (en) * | 2002-05-01 | 2003-11-13 | Sundew Technologies, Llc | Trench capacitor with enhanced capacity and method of fabrication same |
JP2008189957A (ja) * | 2007-02-02 | 2008-08-21 | Kobe Steel Ltd | 連続成膜装置 |
CN102712999A (zh) * | 2009-10-06 | 2012-10-03 | 欧瑞康太阳能(处贝区市)公司 | 涂覆基材的方法 |
CN103459665A (zh) * | 2011-03-29 | 2013-12-18 | 凸版印刷株式会社 | 卷绕成膜装置 |
CN104060240A (zh) * | 2014-07-11 | 2014-09-24 | 无锡格菲电子薄膜科技有限公司 | 一种生产二维纳米材料的水平式卷对卷装置 |
Also Published As
Publication number | Publication date |
---|---|
US20180237913A1 (en) | 2018-08-23 |
EP3344796A4 (en) | 2019-01-30 |
EP3344796A1 (en) | 2018-07-11 |
CN107949656B (zh) | 2020-07-03 |
US10214813B2 (en) | 2019-02-26 |
EP3344796B1 (en) | 2020-08-05 |
WO2017037338A1 (en) | 2017-03-09 |
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Legal Events
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Espoo, Finland Patentee after: BENEQ Group Ltd. Address before: Espoo, Finland Patentee before: BENEQ OY |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220824 Address after: Espoo, Finland Patentee after: BENEQ OY Address before: Espoo, Finland Patentee before: BENEQ Group Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230515 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Patentee after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Espoo, Finland Patentee before: BENEQ OY |