CN107946406A - A kind of bionical light reads non-refrigerating infrared focal plane and preparation method thereof - Google Patents
A kind of bionical light reads non-refrigerating infrared focal plane and preparation method thereof Download PDFInfo
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- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims abstract description 12
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 12
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 46
- 229910052710 silicon Inorganic materials 0.000 claims description 46
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
The invention discloses a kind of bionical light to read non-refrigerating infrared focal plane and preparation method thereof, belongs to non-refrigerated infrared focal plane probe domain technology field.The present invention uses for reference Morpho butterfly's wings micro-nano structure and interacts with infra-red radiation, produces the wavelength conversion characteristics of visible ray change, is applied to the research that light reads non refrigerating infrared imaging focus plane array.The MEMS technology that is combined using photoetching process, ICP RIE etching technics, coating process, selective sideetching technique and PDMS micro-nano structure duplication process prepares the complex three-dimensional micro-nano structure of imitative butterfly's wing scale；The present invention develop it is feasible there is high optical sensitivity light to read non refrigerating infrared imaging focus plane detection pixel array, technical foundation will be put forward for the exploitation of infrared detecting unit micro-nano structure in infrared imagery technique of future generation.
Description
Technical field
The present invention relates to a kind of bionical light to read non-refrigerating infrared focal plane and preparation method thereof, belongs to light and reads non-brake method
Infrared focal plane detector domain technology field.
Background technology
Infrared detector is the core of infrared detection system, is that the light sensing for producing response can be radiated to extraneous infrared light
Device, the two-dimensional array of multiple infrared detector unit compositions are known as infrared focal plane array（FPA, Focal Plane Array）.
Photon detector has the characteristics that fast response time, reliability are high.But the technology needs cryogenic refrigeration, this adds increased it to be
The complexity of system, causes system price to remain high, so as to constrain its application and development.Hot-probing uncooled ir is burnt flat
Surface detector technology is quickly grown with the continuous progress of semiconductor fabrication process and the continuous lifting of application demand.Although mesh
Preceding sensitivity can't compared with refrigeration type infrared detector, but this technology be not required to refrigeration, cost is low, small power consumption, light weight,
It is small, start and stabilized speed it is fast the advantages that, be more advantageous to this technology application popularization, simultaneously because price is relatively cheap
Also can meet civilian infrared system and part equip on a large scale military infrared system there is an urgent need to.
Traditional non-refrigerated infrared focal plane probe uses electricity playback mode, and the metal of electricity playback mode connects
The thermal conductivity of detector cells is improved, reduces being thermally isolated between detector cells and substrate, as a result reduces temperature rise effect.
With the development of MEMS techniques, the light that Manalis in 1997 et al. takes the lead in being made of Si/Al bi-material layers cantilever beam is read
Go out infrared focal plane array, when absorbing incident IR radiation, after producing temperature rise, the spacing between its is spiral produces minor variations,
The focal length of Fresnel zone plate is caused to change, the light being emitted after defocusing is received by CCD again, forms image.It is this to be based on
The detection that the optical pickup system of inter pixel interference (Inter-pixel interference) principle may provide higher is sensitive
Degree.Generally speaking, current light reads thermal type infrared detector and mainly utilizes bimetallic effect type, carrier-strain type and heat
Three kinds of principles of luminous effect type manufacture and design certain thermotropic micro-structure to absorb infra-red radiation in substrate, and still, these set
The noise equivalent temperature difference and spatial resolution, time response etc. of meter are difficult to the performance requirement for meeting third generation Infrared FPA.
Nature is best designer, and the mankind therefrom constantly obtain invention and the inspiration created, to solve various science
Technical barrier.2012, American scientist by studying this biology with 500 perpetual calendar histories of Morpho butterflies, from
Inspiration is found in the wing of its colorful change, designs a kind of sensitive infrared sensor.Correlative theses are published in《Nature-light
Son is learned》（Nature Photonics）On, this or will be helpful to design thermal imaging sensor.Since infrared thermal imaging can be by thing
The thermal energy visualization that body itself distributes, thus it has extensive use in terms of industry, military and medicine.Radislav A and
Colleague designs a kind of biomimetic sensor, possess than existing infrared detector volume smaller, detection speed faster, sensitivity higher
Advantage, and its to heat control do not require, it is not required that complicated precision processing technology.In this contrived experiment,
They will absorb the extraordinary carbon nanotube technology of infrared radiation property, and with the colorful change of sudden strain of a muscle butterfly wing, this feature is combined,
By experiment, scientist has found that when in infrared radiation to wing thermal expansion occurs for micro-nano nanostructured on wing scale, makes
The refractive index for obtaining these micro-nano structures changes, so that wing color changes, it means that this micro-nano structure
Light can be transformed into the change of visible light wave range from infrared band.Fig. 1 is Morpho butterfly's wing scale micro-nano structures
Infrared acquisition schematic diagram based on wavelength convert.In addition they also found, the increase of carbon nanotube density on wing, wing it is red
Absorbable amount of radiation can also increase therewith outside, so as to improve the sensitivity of sensor.The same year, scientist Sambles J R exist
《Nature-photonic propulsion》（Nature Photonics）On publish an article and point out, derive from biological structure wavelength convert based on this
Infrared acquisition principle, once prepare the large area FPA arrays by optimization design, either specific IR wavelength
Or the IR wavelength of a certain scope, utilize this technology, it will have very huge application prospect, especially in medical diagnosis and
In terms of monitoring.
The content of the invention
An object of the present invention, is to provide a kind of bionical light and reads non-refrigerating infrared focal plane and preparation method thereof.This
The high biomimetic features performance infrared detector of invention exploitation and manufacture a new generation provides a new approach.The present invention solves above-mentioned skill
The technical solution of art problem is as follows：A kind of bionical light reads non-refrigerating infrared focal plane and preparation method thereof, includes the following steps：
Step 1：Existed with photoetching technique（111）The grating fringe of micro-meter scale is processed on monocrystalline silicon piece, wherein grating fringe will
Parallel to { 110 } crystal face, so that grating side wall is { 110 } crystal face after ICP-Bosch techniques etching；
Step 2：{ 110 } crystal face side wall band for etching micro-meter scale on a silicon substrate using ICP-Bosch techniques receives scale ripple
The grating fringe of line structure, to the sample clean after etching to remove the carbon that produces after photoresist and ICP-Bosch techniques etching
Fluorine compounds；
Step 3：Sample surfaces are tilted a certain angle, and one layer of Cr covering as wet etching is deposited using electron beam evaporation process
Film, since sample surfaces are tilted a certain angle so that the vertical movement direction and grating sidewall surfaces face of evaporation movement material have
Certain angle, so as to so that the bottom of { 110 } crystal face side wall ripple covers one layer of Cr；
Step 4：The characteristics of using Silicon Crystal Anisotropic Etching, using wet corrosion technique, gone out to be layered micro- with KOH solution corrosion
Micro-nano structure；
Step 5：Remove metal Cr, dry, prepare silicon substrate and imitate butterfly scale layering micro-nano structure；Step 6：With silicon substrate micro-nano knot
Structure is mould, and the complex three-dimensional that imitative butterfly's wing scale is prepared with reference to single-walled carbon nanotube doping PDMS micro-nano moulding process is micro-
Micro-nano structure is to improve to infrared detective sensitiveness, up to the novel bionic non-refrigerated infrared focal plane probe pixel.
Infrared acquisition principle uses for reference the wavelength convert performance of biological structure, prepares bionic micro-nano structure, when bionic micro-nano structure detects
To after infra-red radiation so that the refractive index of these micro-nano structures changes, and causes the change of spectrum.This micro-nano structure can be with
Light is transformed into the change of visible light wave range from infrared band, so that real non-brake method light reads infrared acquisition.In step 1, adopt
With photoetching technique, to select（111）Monocrystalline silicon piece does substrate, silicon substrate surface spin coating photoresist, exposure, development, by mask plate
On minute yardstick raster graphic be transferred to photoresist surface, wherein grating fringe will be parallel to { 110 } crystal face.Grating fringe interval
Scope is 50nm-10 μm.In step 2, { 110 } crystal face of micro-meter scale is etched on a silicon substrate using ICP-Bosch techniques
Side wall band receives the grating fringe of scale ripple struction, and depth bounds is 100nm-10 μm, and Bosch technological principles are etching and protection
Alternately, thus sector structure can be etched in silicon grating side wall, etches power parameter and the time determines sector structure
An important factor for size, the size of the sector structure further influences to be layered the thickness of micro-nano structure, Layer thickness 50nm-
200nm.Electron beam evaporation deposition technique is used in step 3, is needed sample inclination certain angle in plated film, the angle model
Enclose for 10o~20o, this angle determines the coverage of sector structure bottom mask, so as to determine the thickness of layering.Step
KOH solution is used in 4, its mass percent concentration is 40%.In step 6, to improve pixel micro-nano structure to infra-red radiation
Detectivity, it is necessary to single-walled carbon nanotube adulterate PDMS prepared in step 5 silicon substrate layering micro-nano structure copy come.
Brief description of the drawings
Fig. 1 Morpho butterfly's wing scale micro-nano structure infrared acquisition schematic diagrames；
Fig. 2 photoetching process grating fringes；
Fig. 3 ICP-Bosch process-side wall bands receive the grating fringe of scale ripple struction；
Fig. 4 coating process covering ripple struction bottom；
Fig. 5 anisotropic wet etching process prepares layering micro-nano structure；
Fig. 6 removes metal Cr, drying, prepares silicon substrate layering micro-nano structure；
The bionical layering micro-nano structure result of Fig. 7 silicon substrates.
Embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
A kind of bionical light reads non-refrigerating infrared focal plane and preparation method thereof, it is characterised in that includes the following steps：
Step 1：As shown in Fig. 2, existed with photoetching technique（111）The grating fringe of micro-meter scale is processed on monocrystalline silicon piece, wherein
Grating fringe will be parallel to { 110 } crystal face, so that grating side wall is { 110 } crystal face after ICP-Bosch techniques etching；
Step 2：As shown in figure 3, etch { 110 } crystal face side wall of micro-meter scale on a silicon substrate using ICP-Bosch techniques
Band receives the grating fringe of scale ripple struction, and the sample clean after etching is etched with removing photoresist and ICP-Bosch techniques
The fluorocarbon produced afterwards；
Step 3：As shown in figure 4, sample surfaces are tilted a certain angle, one layer of Cr is deposited as wet method using electron beam evaporation process
The mask of corrosion, since sample surfaces are tilted a certain angle so that the vertical movement direction of evaporation movement material and grating side wall
There is certain angle in surface face, so as to so that the bottom of { 110 } crystal face side wall ripple covers one layer of Cr；
Step 4：As shown in figure 5, the characteristics of using Silicon Crystal Anisotropic Etching, rotten with KOH solution using wet corrosion technique
Lose layering micro-nano structure；
Step 5：As shown in fig. 6, removing metal Cr, dry, prepare silicon substrate and imitate butterfly scale layering micro-nano structure, Fig. 7 is real
Apply result figure；
Step 6：Using silicon substrate micro-nano structure as mould, imitative butterfly is prepared with reference to single-walled carbon nanotube doping PDMS micro-nano moulding process
The complex three-dimensional micro-nano structure of butterfly wing scale is to improve to infrared detective sensitiveness, up to the novel bionic non-brake method
Infrared focal plane detector pixel.
Embodiment one：
A kind of bionical light of disclosure of the invention reads non-refrigerating infrared focal plane and preparation method thereof, it is characterised in that including as follows
Step：
Step 1：Existed with photoetching technique（111）The grating fringe of micro-meter scale is processed on monocrystalline silicon piece, wherein grating fringe will
Parallel to { 110 } crystal face, so that grating side wall is { 110 } crystal face after ICP-Bosch techniques etching；
Step 2：{ 110 } crystal face side wall band for etching micro-meter scale on a silicon substrate using ICP-Bosch techniques receives scale ripple
The grating fringe of line structure, APM (SC-1 are used to the sample after etching）Method（Formula：NH4OH/H2O2 /H2O=1:1:5,
Temperature is 80 DEG C）To remove the fluorocarbon produced after photoresist and ICP-Bosch techniques etching；
Step 3：Sample surfaces are tilted a certain angle, and one layer of Cr covering as wet etching is deposited using electron beam evaporation process
Film, since sample surfaces are tilted a certain angle so that the vertical movement direction and grating sidewall surfaces face of evaporation movement material have
Certain angle, so as to so that the bottom of { 110 } crystal face side wall ripple covers one layer of Cr；
Step 4：The characteristics of using Silicon Crystal Anisotropic Etching, using wet corrosion technique, gone out to be layered micro- with KOH solution corrosion
Micro-nano structure；
Step 5：Remove metal Cr with dilute sulfuric acid, dry, prepare silicon substrate and imitate butterfly scale layering micro-nano structure；
Step 6：Using silicon substrate micro-nano structure as mould, imitative butterfly is prepared with reference to single-walled carbon nanotube doping PDMS micro-nano moulding process
The complex three-dimensional micro-nano structure of butterfly wing scale is to improve to infrared detective sensitiveness, up to the novel bionic non-brake method
Infrared focal plane detector pixel.
Infrared acquisition principle uses for reference the wavelength convert performance of biological structure, bionic micro-nano structure is prepared, when bionical micro-nano
After structure detects infra-red radiation so that the refractive index of these micro-nano structures changes, and causes the change of spectrum.This micro-nano
Light can be transformed into the change of visible light wave range by structure from infrared band, so that real non-brake method light reads infrared acquisition.
In step 1, using photoetching technique, to select（111）Monocrystalline silicon piece does substrate, silicon substrate surface spin coating photoresist,
Exposure, development, photoresist surface is transferred to by the minute yardstick raster graphic on mask plate, and wherein grating fringe will be parallel to
{ 110 } crystal face.Grating fringe interval is 50nm.
In step 2, { 110 } crystal face side wall band for being etched micro-meter scale on a silicon substrate using ICP-Bosch techniques is received
The grating fringe of scale ripple struction, depth bounds 100nm, Bosch technological principle be etching and protection alternately, thus
Sector structure can be etched in silicon grating side wall, etch power parameter and the time determines the size of sector structure, sector knot
An important factor for size of structure further influences to be layered the thickness of micro-nano structure, Layer thickness 50nm.
Electron beam evaporation deposition technique is used in step 3, is needed sample inclination certain angle in plated film, the angle
Scope is 10o, this angle determines the coverage of sector structure bottom mask, so as to determine the thickness of layering.
KOH solution is used in step 4, its mass percent concentration is 40%.
In step 6, to improve pixel micro-nano structure to the detectivity of infra-red radiation, it is necessary to be adulterated with single-walled carbon nanotube
PDMS prepared in step 5 silicon substrate layering micro-nano structure copy come.
Embodiment two：
A kind of bionical light of disclosure of the invention reads non-refrigerating infrared focal plane and preparation method thereof, it is characterised in that including as follows
Step：
Step 1：Existed with photoetching technique（111）The grating fringe of micro-meter scale is processed on monocrystalline silicon piece, wherein grating fringe will
Parallel to { 110 } crystal face, so that grating side wall is { 110 } crystal face after ICP-Bosch techniques etching；
Step 2：{ 110 } crystal face side wall band for etching micro-meter scale on a silicon substrate using ICP-Bosch techniques receives scale ripple
The grating fringe of line structure, APM (SC-1 are used to the sample after etching）Method（Formula：NH4OH/H2O2 /H2O=1:1:5,
Temperature is 80 DEG C）To remove the fluorocarbon produced after photoresist and ICP-Bosch techniques etching；
Step 3：Sample surfaces are tilted a certain angle, and one layer of Cr covering as wet etching is deposited using electron beam evaporation process
Film, since sample surfaces are tilted a certain angle so that the vertical movement direction and grating sidewall surfaces face of evaporation movement material have
Certain angle, so as to so that the bottom of { 110 } crystal face side wall ripple covers one layer of Cr；
Step 4：The characteristics of using Silicon Crystal Anisotropic Etching, using wet corrosion technique, gone out to be layered micro- with KOH solution corrosion
Micro-nano structure；
Step 5：Remove metal Cr with dilute sulfuric acid, dry, prepare silicon substrate and imitate butterfly scale layering micro-nano structure；
Step 6：Using silicon substrate micro-nano structure as mould, imitative butterfly is prepared with reference to single-walled carbon nanotube doping PDMS micro-nano moulding process
The complex three-dimensional micro-nano structure of butterfly wing scale is to improve to infrared detective sensitiveness, up to the novel bionic non-brake method
Infrared focal plane detector pixel.
Infrared acquisition principle uses for reference the wavelength convert performance of biological structure, bionic micro-nano structure is prepared, when bionical micro-nano
After structure detects infra-red radiation so that the refractive index of these micro-nano structures changes, and causes the change of spectrum.This micro-nano
Light can be transformed into the change of visible light wave range by structure from infrared band, so that real non-brake method light reads infrared acquisition.
In step 1, using photoetching technique, to select（111）Monocrystalline silicon piece does substrate, silicon substrate surface spin coating photoresist,
Exposure, development, photoresist surface is transferred to by the minute yardstick raster graphic on mask plate, and wherein grating fringe will be parallel to
{ 110 } crystal face.Grating fringe interval is 5 μm.
In step 2, { 110 } crystal face side wall band for being etched micro-meter scale on a silicon substrate using ICP-Bosch techniques is received
The grating fringe of scale ripple struction, depth bounds are 1 μm, and Bosch technological principles are etchings and protect alternately, thus meeting
Sector structure is etched in silicon grating side wall, power parameter is etched and the time determines the size of sector structure, the sector structure
Size further influence be layered micro-nano structure thickness an important factor for, Layer thickness 100nm.
Electron beam evaporation deposition technique is used in step 3, is needed sample inclination certain angle in plated film, the angle
Scope is 15o, this angle determines the coverage of sector structure bottom mask, so as to determine the thickness of layering.
KOH solution is used in step 4, its mass percent concentration is 40%.
In step 6, to improve pixel micro-nano structure to the detectivity of infra-red radiation, it is necessary to be adulterated with single-walled carbon nanotube
PDMS prepared in step 5 silicon substrate layering micro-nano structure copy come.
Embodiment three：
A kind of bionical light of disclosure of the invention reads non-refrigerating infrared focal plane and preparation method thereof, it is characterised in that including as follows
Step：
Step 1：Existed with photoetching technique（111）The grating fringe of micro-meter scale is processed on monocrystalline silicon piece, wherein grating fringe will
Parallel to { 110 } crystal face, so that grating side wall is { 110 } crystal face after ICP-Bosch techniques etching；
Step 2：{ 110 } crystal face side wall band for etching micro-meter scale on a silicon substrate using ICP-Bosch techniques receives scale ripple
The grating fringe of line structure, APM (SC-1 are used to the sample after etching）Method（Formula：NH4OH/H2O2 /H2O=1:1:5,
Temperature is 80 DEG C）To remove the fluorocarbon produced after photoresist and ICP-Bosch techniques etching；
Step 3：Sample surfaces are tilted a certain angle, and one layer of Cr covering as wet etching is deposited using electron beam evaporation process
Film, since sample surfaces are tilted a certain angle so that the vertical movement direction and grating sidewall surfaces face of evaporation movement material have
Certain angle, so as to so that the bottom of { 110 } crystal face side wall ripple covers one layer of Cr；
Step 4：The characteristics of using Silicon Crystal Anisotropic Etching, using wet corrosion technique, gone out to be layered micro- with KOH solution corrosion
Micro-nano structure；
Step 5：Remove metal Cr with dilute sulfuric acid, dry, prepare silicon substrate and imitate butterfly scale layering micro-nano structure；
Step 6：Using silicon substrate micro-nano structure as mould, imitative butterfly is prepared with reference to single-walled carbon nanotube doping PDMS micro-nano moulding process
The complex three-dimensional micro-nano structure of butterfly wing scale is to improve to infrared detective sensitiveness, up to the novel bionic non-brake method
Infrared focal plane detector pixel.
Infrared acquisition principle uses for reference the wavelength convert performance of biological structure, bionic micro-nano structure is prepared, when bionical micro-nano
After structure detects infra-red radiation so that the refractive index of these micro-nano structures changes, and causes the change of spectrum.This micro-nano
Light can be transformed into the change of visible light wave range by structure from infrared band, so that real non-brake method light reads infrared acquisition.
In step 1, using photoetching technique, to select（111）Monocrystalline silicon piece does substrate, silicon substrate surface spin coating photoresist,
Exposure, development, photoresist surface is transferred to by the minute yardstick raster graphic on mask plate, and wherein grating fringe will be parallel to
{ 110 } crystal face.Grating fringe interval is 10 μm.
In step 2, { 110 } crystal face side wall band for being etched micro-meter scale on a silicon substrate using ICP-Bosch techniques is received
The grating fringe of scale ripple struction, depth bounds are 10 μm, and Bosch technological principles are etchings and protect alternately, thus
Sector structure can be etched in silicon grating side wall, etch power parameter and the time determines the size of sector structure, sector knot
An important factor for size of structure further influences to be layered the thickness of micro-nano structure, Layer thickness 200nm.
Electron beam evaporation deposition technique is used in step 3, is needed sample inclination certain angle in plated film, the angle
Scope is 20o, this angle determines the coverage of sector structure bottom mask, so as to determine the thickness of layering.
KOH solution is used in step 4, its mass percent concentration is 40%.
In step 6, to improve pixel micro-nano structure to the detectivity of infra-red radiation, it is necessary to be adulterated with single-walled carbon nanotube
PDMS prepared in step 5 silicon substrate layering micro-nano structure copy come.
Claims (7)
1. a kind of bionical light reads non-refrigerating infrared focal plane and preparation method thereof, it is characterised in that includes the following steps：
Step 1：Existed with photoetching technique（111）The grating fringe of micro-meter scale is processed on monocrystalline silicon piece, wherein grating fringe will
Parallel to { 110 } crystal face, so that grating side wall is { 110 } crystal face after ICP-Bosch techniques etching；
Step 2：{ 110 } crystal face side wall band for etching micro-meter scale on a silicon substrate using ICP-Bosch techniques receives scale ripple
The grating fringe of line structure, APM (SC-1 are used to the sample after etching）Method（Formula：NH4OH/H2O2 /H2O=1:1:5,
Temperature is 80 DEG C）To remove the fluorocarbon produced after photoresist and ICP-Bosch techniques etching；
Step 3：Sample surfaces are tilted a certain angle, and one layer of Cr covering as wet etching is deposited using electron beam evaporation process
Film, since sample surfaces are tilted a certain angle so that the vertical movement direction and grating sidewall surfaces face of evaporation movement material have
Certain angle, so as to so that the bottom of { 110 } crystal face side wall ripple covers one layer of Cr；
Step 4：The characteristics of using Silicon Crystal Anisotropic Etching, using wet corrosion technique, gone out to be layered micro- with KOH solution corrosion
Micro-nano structure；
Step 5：Remove metal Cr with dilute sulfuric acid, dry, prepare silicon substrate and imitate butterfly scale layering micro-nano structure；
Step 6：Using silicon substrate micro-nano structure as mould, imitative butterfly is prepared with reference to single-walled carbon nanotube doping PDMS micro-nano moulding process
The complex three-dimensional micro-nano structure of butterfly wing scale is to improve to infrared detective sensitiveness, up to the novel bionic non-brake method
Infrared focal plane detector pixel.
2. a kind of bionical light according to claim 1 reads non-refrigerating infrared focal plane preparation method, it is characterised in that red
Outer detection principle uses for reference the wavelength convert performance of biological structure, bionic micro-nano structure is prepared, when bionic micro-nano structure detects
After infra-red radiation so that the refractive index of these micro-nano structures changes, and causes the change of spectrum, and this micro-nano structure can incite somebody to action
Light is transformed into the change of visible light wave range from infrared band, so that real non-brake method light reads infrared acquisition.
3. a kind of bionical light according to claim 1 reads non-refrigerating infrared focal plane preparation method, it is characterised in that step
In rapid 1, using photoetching technique, to select（111）Monocrystalline silicon piece does substrate, and silicon substrate surface spin coating photoresist, exposure, develop,
Minute yardstick raster graphic on mask plate is transferred to photoresist surface, wherein grating fringe will be parallel to { 110 } crystal face, grating
Fringe spacing scope is 50nm-10 μm.
4. a kind of bionical light according to claim 1 reads non-refrigerating infrared focal plane preparation method, it is characterised in that step
In rapid 2, { 110 } crystal face side wall band for etching micro-meter scale on a silicon substrate using ICP-Bosch techniques receives scale ripple knot
The grating fringe of structure, depth bounds are 100nm-10 μm, Bosch technological principles be etching and protection alternately, thus can be
Silicon grating side wall etches sector structure, etches power parameter and the time determines the size of sector structure, the sector structure
An important factor for size further influences to be layered the thickness of micro-nano structure, Layer thickness 50nm-200nm.
5. a kind of bionical light according to claim 1 reads non-refrigerating infrared focal plane preparation method, it is characterised in that step
Electron beam evaporation deposition technique is used in rapid 3, is needed sample inclination certain angle in plated film, which is 10o~
20o, this angle determines the coverage of sector structure bottom mask, so as to determine the thickness of layering.
6. a kind of bionical light according to claim 1 reads non-refrigerating infrared focal plane preparation method, it is characterised in that step
KOH solution is used in rapid 4, its mass percent concentration is 40%.
7. a kind of bionical light according to claim 1 reads non-refrigerating infrared focal plane preparation method, it is characterised in that step
In rapid 6, to improve pixel micro-nano structure to the detectivity of infra-red radiation, it is necessary to the PDMS that single-walled carbon nanotube adulterates step
The silicon substrate layering micro-nano structure prepared in rapid 5 copies.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114815025A (en) * | 2022-05-17 | 2022-07-29 | 中国科学院上海光学精密机械研究所 | Preparation method of large-aspect-ratio sub-wavelength periodic grating |
-
2017
- 2017-11-29 CN CN201711221074.8A patent/CN107946406A/en active Pending
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| BRANDON HONG: ""Simple Nanoimprinted Polymer Nanostructures for Uncooled Thermal Detection by Direct Surface Plasmon Resonance Imaging"", 《ACS APPL. MATER. INTERFACES》 * |
| FANGYU ZHANG: ""Infrared Detection Based on Localized Modification of Morpho Butterfly Wings"", 《ADV. MATER.》 * |
| TAMAR SAISON: ""Replication of butterfly wing and natural lotus leaf structures by nanoimprint on silica sol-gel films"", 《BIOINSPIRATION & BIOMIMETICS 》 * |
| YANG GAO: ""Bio-Inspired Fabrication of Complex Hierarchical Structure in Silicon"", 《J. NANOSCI. NANOTECHNOL.》 * |
| ZHIWU HAN: ""Fabrication of the replica templated from butterfly wing scales with complex light trapping structures"", 《APPLIED SURFACE SCIENCE》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114815025A (en) * | 2022-05-17 | 2022-07-29 | 中国科学院上海光学精密机械研究所 | Preparation method of large-aspect-ratio sub-wavelength periodic grating |
| CN114815025B (en) * | 2022-05-17 | 2024-03-01 | 中国科学院上海光学精密机械研究所 | Preparation method of large-duty-ratio sub-wavelength period grating |
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