CN107946321B - Array substrate, preparation method thereof, display panel and display device - Google Patents
Array substrate, preparation method thereof, display panel and display device Download PDFInfo
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- CN107946321B CN107946321B CN201711322180.5A CN201711322180A CN107946321B CN 107946321 B CN107946321 B CN 107946321B CN 201711322180 A CN201711322180 A CN 201711322180A CN 107946321 B CN107946321 B CN 107946321B
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- 239000000758 substrate Substances 0.000 title claims abstract description 119
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000011368 organic material Substances 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 229920001621 AMOLED Polymers 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 2
- 238000005286 illumination Methods 0.000 abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 description 11
- 150000004706 metal oxides Chemical class 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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Abstract
The invention discloses an array substrate and a preparation method thereof, a display panel and a display device, wherein the array substrate comprises a shading layer and an active layer which are stacked on a substrate, the shading layer is positioned at one side close to the substrate, and the orthographic projection of the shading layer on the substrate covers the orthographic projection of the active layer on the substrate; the shading layer is made of black organic materials. The array substrate provided by the embodiment of the invention is characterized in that the light shielding layer and the active layer are arranged on the substrate, the light shielding layer is arranged at one side close to the substrate, and the orthographic projection of the light shielding layer on the substrate covers the orthographic projection of the active layer on the substrate, so that the light shielding layer can completely shield the active layer and prevent the influence of illumination on the active layer.
Description
Technical Field
The invention relates to the technical field of display, in particular to an array substrate, a preparation method of the array substrate, a display panel and a display device.
Background
Metal oxide semiconductors are widely used in display devices because of their advantages, such as good process uniformity, low leakage current, and high mobility. However, the performance of the metal oxide semiconductor is easily affected by light, and particularly when the metal oxide semiconductor is illuminated, the density of carriers in a channel in a display device is increased, so that the threshold voltage of the TFT is changed towards a negative value, and the application of the metal oxide semiconductor in the display device is limited due to the characteristics of uncertainty, incomplete recovery and the like of the change.
At present, a metal oxide semiconductor is used for an active layer of an array substrate, and is mainly prevented from being influenced by external illumination in a shading mode. Both the two have great defects, the former uses grid metal as a shading layer, the shading effect is poor, lateral light and reflected light irradiate an active layer, the grid cannot be too large due to the limitation of design, and if a metal layer is added as the shading layer, the structure is complex and the yield is not favorable; the latter is through increasing the metal level as the light shield layer, and the shading metal level can not hang in the air, must be connected to certain electric potential to prevent that static is bad, and this must need increase the via hole in order to connect metal light shield layer to certain electric potential, and the active layer needs the boundary that the conductorization part can not climb the shading metal level, prevents to influence the conductorization effect, has increased via hole and trade layer department again like this, and the overall arrangement space is extravagant more, and the structure is complicated to the yield.
Disclosure of Invention
The invention provides an array substrate, a preparation method of the array substrate, a display panel and a display device, and aims to solve the problem that in the prior art, a light shielding layer is complex in design structure and beneficial to yield.
In a first aspect, the present invention provides an array substrate, including a light-shielding layer and an active layer stacked on a substrate, where the light-shielding layer is located on a side close to the substrate, and an orthographic projection of the light-shielding layer on the substrate covers an orthographic projection of the active layer on the substrate;
the shading layer is made of black organic materials.
Optionally, an insulating layer is further disposed between the light shielding layer and the active layer.
Optionally, the light shielding layer is located in a non-opening area of the array substrate.
Optionally, the light shielding layer is made of a photoresist resin material.
Optionally, the array substrate is an array substrate of an AMOLED type bottom emission structure.
In a second aspect, the invention further provides a display panel including the array substrate.
In a third aspect, the present invention further provides a display device, including the display panel.
In a fourth aspect, the present invention also provides a method for manufacturing an array substrate, including:
Providing a substrate;
sequentially patterning a light shielding layer and an active layer on the substrate;
the light shielding layer is located on one side close to the substrate, the orthographic projection of the light shielding layer on the substrate covers the orthographic projection of the active layer on the substrate, and the light shielding layer is a black organic matter material.
Optionally, the sequentially patterning a light-shielding layer and an active layer on the substrate further includes:
patterning a light shielding layer on the substrate;
patterning an insulating layer on the light shielding layer;
and patterning to form an active layer.
Optionally, the light shielding layer is located in a non-opening area of the array substrate.
Compared with the prior art, the embodiment of the invention has the following advantages:
the array substrate provided by the embodiment of the invention is provided with the light shielding layer and the active layer on the substrate, the light shielding layer is arranged on one side close to the substrate, and the orthographic projection of the light shielding layer on the substrate covers the orthographic projection of the active layer on the substrate, so that the light shielding layer can completely shield the active layer and prevent the illumination from influencing the active layer.
Drawings
Fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of an array substrate of an AMOLED type bottom emission structure according to an embodiment of the present invention;
fig. 3 is a flow chart illustrating a method for manufacturing an array substrate according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments of the present invention, belong to the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present invention, where the array substrate includes a light-shielding layer 2 and an active layer 3 stacked on a substrate 1, the light-shielding layer 2 is located at a side close to the substrate 1, and an orthographic projection of the light-shielding layer 2 on the substrate 1 covers an orthographic projection of the active layer 3 on the substrate, so that the light-shielding layer 2 can completely shield the active layer 3, and the active layer 2 is prevented from being affected by external light 5.
It is to be understood that fig. 1 is only for illustrating the position relationship between the light shielding layer 2 and the active layer 3, and other structures of the array substrate may also be present between the two layers and/or above the active layer 3, which are all conventional designs and not shown in the drawings, but those skilled in the art can add conventional structures to the drawings and understand the present invention.
The light shielding layer 2 is made of a black organic material which is non-conductive, the light shielding layer 2 is made of the black organic material, the light shielding layer 2 can be directly formed on the substrate 1, and then other structures of the array substrate can be directly formed above the light shielding layer 2.
The currently used material of the active layer 3 is a metal oxide semiconductor, such as a-IGZO, and the active layer 3 made of the metal oxide material cannot contact with the light shielding layer 2, which may result in unstable characteristics and poor performance of the metal oxide semiconductor. Therefore, the insulating layer 4 is usually provided between the light-shielding layer 2 and the active layer 3, particularly in a top-gate array substrate. In the bottom gate array substrate, the active layer 3 and the light-shielding layer 2 are not in direct contact with each other because there are many other layer structures between them, and the insulating layer 4 may not be provided.
In the array substrate of the AMOLED type bottom emission structure, since metal wires (such as gate wires, data wires, etc.) on the array substrate reflect light, and further affect the viewing effect, polarizer plates are generally required to be attached to the metal wires to avoid the influence of reflection on display, and the light shielding layer 2 of the invention can not only shield the active layer 3 to avoid the influence of illumination on the active layer 3, but also can be arranged in the area with the metal wires to shield the metal wires to eliminate reflection, so that the polarizer plates do not need to be attached to the metal wires, and the polarizer plates are saved. The light shielding layer 2 may be provided in a non-display region on the array substrate except for regions corresponding to the active layer 3 and the metal lines, and thus the light shielding layer 2 may be located in a non-opening region of the array substrate. Therefore, the influence of the external illumination 5 on the substrate to further influence the display effect can be effectively avoided.
Fig. 2 is a schematic structural diagram of an array substrate of an AMOLED type bottom emission structure according to an embodiment of the present invention, the array substrate is a top gate structure, and the embodiment of the present invention is described as an example. As shown in fig. 2, a light shielding layer 2, an insulating layer 4, an active layer 3, a gate insulating layer 9, a gate layer 8, a second insulating layer 6, a source drain layer 7, and the like are sequentially stacked on a substrate 1, and the light shielding layer 2 can shield the whole TFT region, thereby preventing external illumination 5 from affecting the active layer 3 and further affecting the performance of the active layer 3. All the non-opening areas of the array substrate are provided with the shading layers 2, so that the influence of external illumination 5 on the active layer 3 is avoided, metal wires can be shaded, reflection can be eliminated, polaroids are saved, and the cost and the working procedures are saved. By adopting the scheme of the embodiment of the invention, the picture seen on one side of the substrate 1 can be clearer, and unnecessary light is eliminated.
The light-shielding layer may be made of a photoresist resin material, which is generally used for a black matrix in the display field, and is therefore a relatively good light-shielding material.
From the above, the embodiments of the present invention have the following advantages:
according to the array substrate provided by the embodiment of the invention, the light shielding layer is arranged in the non-opening area of the array substrate, so that the influence of illumination on the active layer and the performance of the active layer can be effectively avoided, metal wires on the array substrate can be shielded, reflection is eliminated, and a polaroid is saved; the shading layer is made of a black organic material and is non-conductive, other structures of the array substrate are arranged on the shading layer, a layout space is occupied without adding through holes and changing layers, the process is simple, the shading effect is good, and high PPI is easy to realize.
It should be noted that the above light shielding layer is not limited to be applied to the AMOLED product with the bottom emission structure, and can be used to avoid the illumination interference in the top emission structure, but the effect is more obvious in the AMOLED type bottom emission structure.
In addition, the array substrate may be a bottom gate type array substrate or a top gate type array substrate, which is not limited to the above embodiments, and the basic structures of the top gate type array substrate and the bottom gate type array substrate are well known to those skilled in the art, and therefore, the description thereof is omitted here.
An embodiment of the present invention further provides a method for manufacturing an array substrate, and as shown in fig. 2, the method includes:
Referring to fig. 1, a light-shielding layer 2 is located at a side close to a substrate 1, an orthographic projection of the light-shielding layer 2 on the substrate 1 covers an orthographic projection of an active layer 3 on the substrate, and the light-shielding layer 2 is a black organic material.
The light shielding layer 2 is made of a black organic material which is non-conductive, the light shielding layer 2 is made of the black organic material, the light shielding layer 2 can be directly formed on the substrate 1, other structures of the array substrate can be directly formed above the light shielding layer, the layout space is occupied without increasing via holes and changing layers, the process is simple, the light shielding effect is good, and high PPI is easy to realize.
It can be understood that other structures may be further disposed between the active layer 3 and the light-shielding layer 2 and/or above the active layer 3, fig. 1 is only for illustrating a positional relationship between the light-shielding layer 2 and the active layer 3, other structures of the array substrate are designed in the prior art, and a forming process thereof is also the prior art, and is not repeated herein.
The currently commonly used material of the active layer 3 is a metal oxide semiconductor, such as a-IGZO, and the active layer 3 made of the metal oxide material cannot contact with the light shielding layer 2, which would otherwise cause unstable characteristics and poor performance of the metal oxide semiconductor, and in the top gate type array substrate, the insulating layer 4 must be disposed between the active layer 3 and the light shielding layer 2, so the step of sequentially patterning the light shielding layer 2 and the active layer 3 on the substrate 1 includes the following three steps:
Patterning a light shielding layer 2 on a substrate 1;
then, patterning an insulating layer 4 on the light shielding layer 2;
finally, the active layer 3 is patterned.
In the bottom-gate array substrate, the active layer 3 and the light-shielding layer 2 are not in direct contact with each other because there are many other layer structures between them, and the insulating layer 4 may not be provided.
It is understood that the light shielding layer 2 may be located in a non-opening region of the array substrate. Therefore, the influence of external illumination 5 on the active layer 3 can be effectively avoided, the performance of the active layer 3 is further influenced, the metal wires on the array substrate can be shielded, reflection is eliminated, and the polaroid is saved.
As can be seen from the above, the embodiments of the present invention have the following advantages:
according to the preparation method of the array substrate, the light shielding layer is formed on the substrate and is located in the whole non-opening area of the substrate, so that the influence of illumination on the active layer and the performance of the active layer can be effectively avoided, metal wires on the array substrate can be shielded, reflection is eliminated, and a polaroid is saved; the shading layer is made of black organic materials and is non-conductive, other structures of the array substrate are arranged on the shading layer, through holes do not need to be added, layers are not changed, layout space is occupied, the process is simple, the shading effect is good, and high PPI is easy to achieve.
The embodiment of the invention also provides a display panel which comprises the array substrate.
The embodiment of the invention also provides a display device, which comprises the display panel of the embodiment, and the display device can be any product or component with a display function, such as a mobile phone, a tablet personal computer, a television, a display, a notebook computer, a digital photo frame, a navigator, electronic paper and the like.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system embodiment, since it is basically similar to the method embodiment, the description is simple, and for the relevant points, refer to the partial description of the method embodiment.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the embodiments of the invention.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. An array substrate is characterized by comprising a shading layer and an active layer which are stacked on a substrate, wherein the shading layer is positioned on one side close to the substrate, and the orthographic projection of the shading layer on the substrate covers the orthographic projection of the active layer on the substrate;
the shading layer is made of black organic matter materials and is not conductive;
the array substrate is of an AMOLED type bottom emission structure, and the shading layer comprises a part arranged in a metal wire area of the array substrate and a part located in a non-opening area of the array substrate so as to shade the metal wire area and the non-opening area.
2. The array substrate of claim 1, wherein an insulating layer is further disposed between the light shielding layer and the active layer.
3. The array substrate of claim 1, wherein the light shielding layer is made of a photoresist material.
4. A display panel comprising the array substrate according to any one of claims 1 to 3.
5. A display device characterized by comprising the display panel according to claim 4.
6. A method for manufacturing an array substrate, the method being applied to the array substrate of any one of claims 1 to 3, comprising:
providing a substrate;
sequentially patterning a light shielding layer and an active layer on the substrate;
the light shielding layer is positioned on one side close to the substrate, the orthographic projection of the light shielding layer on the substrate covers the orthographic projection of the active layer on the substrate, and the light shielding layer is made of a black organic material;
the array substrate is an AMOLED type array substrate with a bottom emission structure, and the shading layer is arranged in a metal wire area of the array substrate.
7. The method of claim 6, wherein the sequentially patterning a light shield layer and an active layer on the substrate comprises:
patterning a light shielding layer on the substrate;
patterning an insulating layer on the light shielding layer;
and patterning to form an active layer.
8. The method of claim 6, wherein the light-shielding layer is located in a non-open area of the array substrate.
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| CN109300957B (en) | 2018-09-30 | 2021-10-08 | 京东方科技集团股份有限公司 | OLED substrate and transparent display |
| CN109659319B (en) * | 2018-12-10 | 2021-01-01 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN110190069B (en) * | 2019-05-22 | 2021-08-03 | 武汉华星光电技术有限公司 | Array substrate and preparation method thereof |
| KR20210052757A (en) | 2019-10-31 | 2021-05-11 | 삼성디스플레이 주식회사 | Display device |
| CN111739897B (en) * | 2020-07-14 | 2022-07-12 | 武汉华星光电技术有限公司 | Array substrate and manufacturing method thereof |
| CN112928127B (en) * | 2021-01-12 | 2022-11-04 | 武汉华星光电技术有限公司 | Array substrate |
| CN113611664A (en) * | 2021-07-30 | 2021-11-05 | 惠科股份有限公司 | Preparation method of array substrate, array substrate and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103855225A (en) * | 2012-12-03 | 2014-06-11 | 乐金显示有限公司 | Thin film transistor, display device and method of manufacturing the same |
| CN106125430A (en) * | 2016-08-26 | 2016-11-16 | 深圳市华星光电技术有限公司 | The preparation method of array base palte, display floater and array base palte |
| CN106935546A (en) * | 2017-04-12 | 2017-07-07 | 京东方科技集团股份有限公司 | The preparation method of array base palte, array base palte, display panel and display device |
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| CN103943626B (en) * | 2013-02-04 | 2017-04-05 | 上海天马微电子有限公司 | A kind of tft array substrate, display floater and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103855225A (en) * | 2012-12-03 | 2014-06-11 | 乐金显示有限公司 | Thin film transistor, display device and method of manufacturing the same |
| CN106125430A (en) * | 2016-08-26 | 2016-11-16 | 深圳市华星光电技术有限公司 | The preparation method of array base palte, display floater and array base palte |
| CN106935546A (en) * | 2017-04-12 | 2017-07-07 | 京东方科技集团股份有限公司 | The preparation method of array base palte, array base palte, display panel and display device |
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