CN107946321A - Array base palte and preparation method thereof, display panel, display device - Google Patents
Array base palte and preparation method thereof, display panel, display device Download PDFInfo
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- CN107946321A CN107946321A CN201711322180.5A CN201711322180A CN107946321A CN 107946321 A CN107946321 A CN 107946321A CN 201711322180 A CN201711322180 A CN 201711322180A CN 107946321 A CN107946321 A CN 107946321A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000011368 organic material Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000000059 patterning Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 229920001621 AMOLED Polymers 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 12
- 238000005286 illumination Methods 0.000 abstract description 9
- 239000002184 metal Substances 0.000 description 18
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012260 resinous material Substances 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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Abstract
The present invention discloses a kind of array base palte and preparation method thereof, display panel, display device, the array base palte includes being stacked light shield layer and active layer in substrate, the light shield layer is located at covers the orthographic projection of the active layer on the substrate close to the side of the substrate, the orthographic projection of the light shield layer on the substrate；The light shield layer is black organic material.The array base palte of the embodiment of the present invention, light shield layer and active layer are provided with substrate, light shield layer is positioned close to the side of substrate, and orthographic projection covering active layer orthographic projection on substrate of the light shield layer in substrate, light shield layer is set to block active layer completely, prevent illumination from being had an impact to active layer, and the light shield layer of the embodiment of the present invention uses black organic material, it is non-conductive, it can be arranged directly in substrate, and the other structures of array base palte are formed above it, it is increased without via and changes layer and account for arrangement space more, technique is simple, good shading effect, and it is easily achieved high PPI.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of array base palte and preparation method thereof, display panel, shows
Showing device.
Background technology
Metal-oxide semiconductor (MOS) is extensive at present because it is with advantages such as process uniformity is good, Low dark curient, high mobilities
Applied in display device.But metal-oxide semiconductor (MOS) easily influences its performance after by illumination, especially when it is subject to illumination
Afterwards so that the increase of raceway groove carriers density in display device so that the threshold voltage of TFT to negative value direction change, and this
The uncertainty and the characteristic such as incomplete recovery of kind of change so that metal-oxide semiconductor (MOS) in the application of display device by
To limitation.
Metal-oxide semiconductor (MOS) is used for the active layer of array base palte at present, mainly avoids it from being subject to by way of shading
Extraneous illumination effect, bottom grating structure are usually by the use of the gate metal of itself as light shield layer, and top gate structure is usually to increase by one
Layer metal is as light shield layer.There is very big defect in the two, the former is by the use of gate metal as light shield layer, and shaded effect is poor, laterally
Light and reflected light are all to be irradiated to active layer, and due to the limitation of design, and grid cannot be done it is too big, if increase
Metal layer is complicated to be unfavorable for yield as light shield layer；The latter is used as light shield layer by increasing metal layer, and shading metal layer is not
Can be hanging, essential to be connected to a certain current potential, to prevent that electrostatic is bad, this is just necessarily required to increase via to connect metal light shield layer
To a certain current potential, and active layer needs conductor part to get over the border of shading metal layer, prevents from influencing conductor effect,
Via is so added again and is changed at layer, and arrangement space waste is more, complicated to be unfavorable for yield.
The content of the invention
The present invention provides a kind of array base palte and preparation method thereof, display panel, display device, to solve the prior art
The problem of middle light shield layer design structure complexity is beneficial to yield.
In a first aspect, the present invention provides a kind of array base palte, the array base palte includes being stacked the screening in substrate
Photosphere and active layer, the light shield layer are located at close to the side of the substrate, the orthographic projection of the light shield layer on the substrate
Cover the orthographic projection of the active layer on the substrate；
The light shield layer is black organic material.
Alternatively, it is additionally provided with insulating layer between the light shield layer and the active layer.
Alternatively, the light shield layer is located at the non-open areas of the array base palte.
Alternatively, the material of the light shield layer is photoresist resinous material.
Alternatively, the array base palte is the array base palte of the bottom emitting structure of AMOLED types.
Second aspect, present invention also offers a kind of display panel, including above-mentioned array base palte.
The third aspect, present invention also offers a kind of display device, including above-mentioned display panel.
Fourth aspect, present invention also offers a kind of preparation method of array base palte, including：
Substrate is provided；
Patterning forms light shield layer and active layer successively on the substrate；
Wherein, the light shield layer is located at close to the side of the substrate, the orthographic projection of the light shield layer on the substrate
The orthographic projection of the active layer on the substrate is covered, the light shield layer is black organic material.
It is alternatively, described that patterning forms light shield layer successively on the substrate and active layer further includes：
Patterning forms light shield layer on the substrate；
Patterning forms insulating layer on the light shield layer；
Patterning forms active layer.
Alternatively, the light shield layer is located at the non-open areas of the array base palte.
Compared with prior art, the embodiment of the present invention has the following advantages：
The array base palte of the embodiment of the present invention, is provided with light shield layer and active layer in substrate, and light shield layer is positioned close to
The side of substrate, and orthographic projection covering active layer orthographic projection on substrate of the light shield layer in substrate, allow light shield layer complete
Active layer is blocked entirely, prevents illumination from being had an impact to active layer, and the light shield layer of the embodiment of the present invention uses black organic matter material
Material, it is non-conductive, it can be arranged directly in substrate, and the other structures of array base palte are formed above it, it is increased without via
Arrangement space is accounted for layer is changed, technique is simple, good shading effect, and is easily achieved high PPI (Pixels Per Inch, per English more
Very little contained number of pixels).
Brief description of the drawings
Fig. 1 show the structure diagram of the array base palte of the embodiment of the present invention；
Fig. 2 show a kind of structural representation of the array base palte of the bottom emitting structure of AMOLED types of the embodiment of the present invention
Figure；
Fig. 3 show the preparation flow figure of the array base palte of the embodiment of the present invention.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is part of the embodiment of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, those of ordinary skill in the art's acquired every other implementation without making creative work
Example, belongs to the scope of protection of the invention.
It is a kind of structure diagram of array base palte of the embodiment of the present invention as shown in Figure 1, which includes stacking
Light shield layer 2 and active layer 3 on the base 1 is set, and light shield layer 2 is located at close to the side of substrate 1, and light shield layer 2 is on the base 1
Orthographic projection of the orthographic projection covering active layer 3 in substrate so that light shield layer 2 can block active layer 3 completely, prevent ambient light
Had an impact according to 5 pairs of active layers 2.
It is understood that Fig. 1 is merely to show the position relationship of light shield layer 2 and active layer 3, between these two layers there
It is existing design and/or the top of active layer 3 can also have the other structures of array base palte, not shown in figure, but this area
Existing structure can be added to the figure by technical staff, and understand the present invention.
Light shield layer 2 is black organic material, and black organic material is non-conductive, and shading is done using black organic material
Light shield layer 2, can be formed directly into substrate 1, can be formed directly in the other structures of array base palte above it afterwards by layer 2,
Light shield layer 2 is non-conductive, without being connected to a certain current potential, therefore is increased without via and changes layer and account for arrangement space more, work
Skill is simple, good shading effect, it is easy to accomplish high PPI.
The material of currently used active layer 3 is metal-oxide semiconductor (MOS), such as the semi-conducting material such as a-IGZO, and is adopted
Active layer 3 cannot be contacted with light shield layer 2 made of metal oxide materials, otherwise can cause the spy of metal-oxide semiconductor (MOS)
Unstable, the degradation of property.Therefore, insulating layer 4 is usually provided between light shield layer 2 and active layer 3, especially in top gate type
Array base palte in.And in the array base palte of bottom gate type, since there are other more layers between active layer 3 and light shield layer 2
Structure, the two is not directly contacted with, and can be not provided with insulating layer 4.
In the array base palte of the bottom emitting structure of AMOLED types, due to metal wire (such as gate on array base palte
Line, data lines etc.) meeting reflection light, and then influence viewing effect, it usually needs polaroid is attached on these metal wires, is avoided
It is reflective that display is impacted, and the light shield layer 2 of the present invention can not only block active layer 3, avoid illumination from producing active layer 3
Influence, the region of metal wire can also be disposed at, block these metal wires, elimination is reflective, without in metal
Polaroid is attached on line, saves polaroid.In addition to the region corresponding with metal wire of active layer 3, as long as on array base palte
Non-display area light shield layer 2 can be set, therefore, light shield layer 2 can be located at array base palte non-open areas.So can be with
Effectively avoid ambient light from being had an impact according to 5 on substrate and then influence display effect.
Fig. 2 shows a kind of array base-plate structure signal of bottom emitting structure of the AMOLED types using the present invention program
Figure, which is top gate structure, and the solution of the present invention is introduced as example.As shown in Fig. 2, stack gradually on the base 1
It is provided with light shield layer 2, insulating layer 4, active layer 3, gate insulation layer 9, grid layer 8, the second insulating layer 6 and source-drain layer 7 etc., shading
Layer 2 can block whole TFT zone, avoid ambient light from being had an impact according to 5 pairs of active layers 3, and then influence the performance of active layer 3.
Light shield layer 2 is both provided with all non-open areas of the array base palte, except avoiding ambient light from producing shadow according to 5 pairs of active layers 3
Ring outer, metal wire can also be blocked, can eliminate reflective, save polaroid, save cost and process.Using of the invention real
The scheme of example is applied, can to become apparent from the picture that 1 side of substrate is seen, eliminate unnecessary light.
The material of above-mentioned light shield layer can be photoresist resinous material, which is commonly used in the black matrix of display field,
Therefore, it is the good light screening material of comparison.
As shown in the above, the embodiment of the present invention has the following advantages：
Light shield layer, is arranged on the non-open areas of array base palte by the array base palte of the embodiment of the present invention, can effectively be kept away
Exempt from illumination to have an impact active layer, and then influence the performance of active layer, the metal wire on array base palte can also be blocked, eliminate
It is reflective, save polaroid；The light shield layer uses black organic material, non-conductive, sets the other structures of array base palte on it,
It is increased without via and changes layer and account for arrangement space more, technique is simple, good shading effect, it is easy to accomplish high PPI.
It should be noted that above-mentioned light shield layer is not limited only to apply the AMOLED products in bottom emitting structure, top emitting knot
Illumination interference etc. can also be avoided in structure using it, only effect is more obvious in the bottom emitting structure of AMOLED types.
In addition, it can also be the array base palte of top gate type that above-mentioned array base palte, which can be the array base palte of bottom gate type, to this
The present invention is not limited, because top gate type array base palte and the basic structure of bottom gate type array base palte are public for those skilled in the art
Know, therefore, details are not described herein.
The embodiment of the present invention additionally provides a kind of preparation method of array base palte, and with reference to shown in Fig. 2, this method includes：
Step 100, there is provided substrate.
Step 200, patterning forms light shield layer and active layer successively in substrate.
With reference to shown in Fig. 1, light shield layer 2 is located at close to the side of substrate 1, the orthographic projection of light shield layer 2 on the base 1 covered with
Orthographic projection of the active layer 3 in substrate, light shield layer 2 are black organic material.
Light shield layer 2 is black organic material, and black organic material is non-conductive, and shading is done using black organic material
Light shield layer 2, can be formed directly into substrate 1, can be formed directly in the other structures of array base palte above it afterwards by layer 2,
It is increased without via and changes layer and account for arrangement space more, technique is simple, good shading effect, it is easy to accomplish high PPI.
It is understood that between active layer 3 and light shield layer 2 and/or the top of active layer 3 can also have other knots
Structure, for Fig. 1 merely to showing the position relationship of light shield layer 2 and active layer 3, the other structures of array base palte are existing design, its
Formation process is also the prior art, and details are not described herein.
The material of currently used active layer 3 is metal-oxide semiconductor (MOS), such as the semi-conducting material such as a-IGZO, and is adopted
Active layer 3 cannot be contacted with light shield layer 2 made of metal oxide materials, otherwise can cause the spy of metal-oxide semiconductor (MOS)
Unstable, the degradation of property, in the array base palte of top gate type, must be provided with insulating layer 4 between active layer 3 and light shield layer 2, because
This, patterning the step of forming light shield layer 2 and active layer 3 successively on the base 1 includes following three step：
First patterning forms light shield layer 2 on the base 1；
Patterning forms insulating layer 4 on light shield layer 2 afterwards；
Finally active layer 3 is formed in patterning.
And in the array base palte of bottom gate type, since also there are other layer of more knot between active layer 3 and light shield layer 2
Structure, the two is not directly contacted with, and can be not provided with insulating layer 4.
It is understood that above-mentioned light shield layer 2 can be located at the non-open areas of array base palte.In this way, both can effectively it keep away
Exempt from ambient light to have an impact according to 5 pairs of active layers 3, and then influence the performance of active layer 3, the metal on array base palte can also be blocked
Line, eliminates reflective, saving polaroid.
Understand through the above, the embodiment of the present invention has the following advantages：
The preparation method of the array base palte of the embodiment of the present invention, forms light shield layer in substrate, and light shield layer is located at substrate
Whole non-open areas, it is possible to prevente effectively from illumination has an impact active layer, and then influences the performance of active layer, can also hide
The metal wire on array base palte is kept off, eliminates reflective, saving polaroid；The light shield layer uses black organic material, non-conductive, at it
The upper other structures for setting array base palte, are increased without via and change layer and account for arrangement space more, technique is simple, shaded effect
It is good, it is easy to accomplish high PPI.
The embodiment of the present invention additionally provides a kind of display panel, including above-mentioned array base palte.
The embodiment of the present invention additionally provides a kind of display device, includes the display panel of above-described embodiment, display device can
Think that mobile phone, tablet computer, television set, display, laptop, Digital Frame, navigator, Electronic Paper etc. are any with aobvious
Show the product or component of function.
Each embodiment in this specification is described by the way of progressive, what each embodiment stressed be with
The difference of other embodiment, between each embodiment identical similar part mutually referring to.For system embodiment
For, since it is substantially similar to embodiment of the method, so description is fairly simple, referring to the portion of embodiment of the method in place of correlation
Defend oneself bright.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know basic creation
Property concept, then can make these embodiments other change and modification.So appended claims be intended to be construed to include it is excellent
Select embodiment and fall into all change and modification of range of embodiment of the invention.
The above description is merely a specific embodiment, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be subject to scope of the claims.
Claims (10)
1. a kind of array base palte, it is characterised in that the array base palte includes being stacked light shield layer in substrate and active
Layer, the light shield layer are located at the side of the close substrate, have described in the orthographic projection covering of the light shield layer on the substrate
The orthographic projection of active layer on the substrate；
The light shield layer is black organic material.
2. array base palte according to claim 1, it is characterised in that also set between the light shield layer and the active layer
It is equipped with insulating layer.
3. array base palte according to claim 1, it is characterised in that the light shield layer is located at the non-of the array base palte and opens
Mouth region domain.
4. array base palte according to claim 1, it is characterised in that the material of the light shield layer is photoresist resinae material
Material.
5. array base palte according to claim 1, it is characterised in that the array base palte is the bottom emitting knot of AMOLED types
The array base palte of structure.
6. a kind of display panel, it is characterised in that including such as claim 1-5 any one of them array base palte.
7. a kind of display device, it is characterised in that including display panel as claimed in claim 6.
A kind of 8. preparation method of array base palte, it is characterised in that including：
Substrate is provided；
Patterning forms light shield layer and active layer successively on the substrate；
Wherein, the light shield layer is located at close to the side of the substrate, the orthographic projection covering of the light shield layer on the substrate
The orthographic projection of the active layer on the substrate, the light shield layer are black organic material.
9. according to the method described in claim 8, it is characterized in that, described pattern successively on the substrate forms light shield layer
Include with active layer：
Patterning forms light shield layer on the substrate；
Patterning forms insulating layer on the light shield layer；
Patterning forms active layer.
10. according to the method described in claim 8, it is characterized in that, the light shield layer is located at the non-opening of the array base palte
Region.
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| CN201711322180.5A CN107946321B (en) | 2017-12-12 | 2017-12-12 | Array substrate, preparation method thereof, display panel and display device |
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| CN111739897A (en) * | 2020-07-14 | 2020-10-02 | 武汉华星光电技术有限公司 | Array substrate and manufacturing method thereof |
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