CN107937979A - The Fuzzy Adaptive Control Scheme of vapor phase method crystal growth pressure system - Google Patents
The Fuzzy Adaptive Control Scheme of vapor phase method crystal growth pressure system Download PDFInfo
- Publication number
- CN107937979A CN107937979A CN201711309540.8A CN201711309540A CN107937979A CN 107937979 A CN107937979 A CN 107937979A CN 201711309540 A CN201711309540 A CN 201711309540A CN 107937979 A CN107937979 A CN 107937979A
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- China
- Prior art keywords
- pressure
- control
- pid
- vacuum chamber
- pressure control
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Abstract
The present invention relates to a kind of Fuzzy Adaptive Control Scheme of vapor phase method crystal growth pressure system, pressure control instrument sends the indoor pressure value of the vacuum chamber of acquisition to PLC module by pressure sensor by Modbus communications, plc data communicates the display that pressure data is done in host computer through TCP, target pressure value and real-time pressure measured value the operation fuzzy-adjustable PID algorithm that host computer is set according to technologist, the Kp of the PID of pressure control instrument is corrected in real time, Ki, these three control parameters of Kd, the dish valve that the pressure control instruction of the PID control circuit output of pressure control instrument is adjusted between vacuum chamber and vacuum pump opens ratio, have the technical effect that providing reliable and stable pressure to technique involved in crystal growing process controls.
Description
Technical field
The present invention relates to a kind of vapor phase method crystal growth pressure automatic control system, more particularly to vapor phase method crystal growth pressure
The Fuzzy Adaptive Control Scheme of Force system.
Background technology
Pressure control is widely present in crystalline material preparation.In general, the flow of the air inlet of control pressurer system
It is fixed, by controlling the exhaust of gas outlet to realize the purpose of pressure control.Implementation has two kinds, first, passing through adjusting
The unlatching ratio of dish valve or ball valve realizes pressure control, and it is exactly to be realized by the pumping speed of Frequency Converter Control vacuum pump to also have a kind of
Pressure control.For the first pressure control mode, concrete implementation approach has the following two kinds：The first is that pressure control instrument passes through instrument
Internal pid control parameter carrys out controlling opening of valve, and usually, common pressure control instrument only has a set of pid parameter, for picture
For the larger system of growing silicon carbice crystals pressure change, a set of pid parameter is difficult to meet the control in different pressures section
Effect；High-end instrument may have a few set pid parameters, but cost can greatly promote.Second is in using PLC controller
PID modules can also directly control the aperture of drain tap, but pid parameter is not easy to change once setting later, can't
The Self-tuning System of pid parameter is carried out as pressure control instrument, for new pressure control targe value just needs that pid parameter is repeated
Debugging.It is big to be directed to pressure control range required during vapor phase method crystal growth, control accuracy requirement is high, above routine
Pressure controling mode cannot meet the requirement of crystal quality.Needed at the initial stage of crystal growth and latter stage vacuum chamber be maintained at compared with
To prevent spontaneous nucleation under big pressure state, need to ensure the low-pressure state of vacuum chamber again in growth course, and as far as possible subtract
Few pressure disturbance is to reduce the defects of crystal produces such as parcel, microchannel, it is seen that the accuracy of pressure control, stability are to crystalline substance
The quality of body has a very big impact.Therefore, a set of new crystal growth pressure control system is developed to have great importance.
The content of the invention
In view of problem existing in the prior art, the present invention provides a kind of fuzzy self-adaption for crystal growth pressure system
Control method, can effectively carry out the accurate control of growth chamber pressure, improve crystal quality, and concrete technical scheme is, and 1, a kind of
The Fuzzy Adaptive Control Scheme of vapor phase method crystal growth pressure system, it is characterised in that：Control method is PC control control
The PID control output of instrument is pressed, vacuum chamber is adjusted to adjust the unlatching ratio of the dish valve between vacuum chamber and vacuum pump in real time
Pressure, specifically includes following steps, (i), host computer setting crystal growth each period pressure set points；(ii), pressure sensor is adopted
Collect current force samples value y (k) and upload host computer, calculate：Error e=r (k)-y (k), error rate ec=e (k)-e
(k-1),
Wherein：Y (k) is current pressure measured value, r (k) is current pressure setting value, e is represented as pressure control error, e (k) is
Current step pressure control error, e (k-1) are the change rate that previous step pressure controls error, ec representative pressures control error；(three)、
E and ec are blurred according to fuzzy rule, by fuzzy control rule table draw pressure control instrument PID Kp, Ki, Kd this 3
Variation delta kp, Δ ki, the Δ kd of a parameter；(iv) the increment of actual pid parameter, is drawn by ambiguity solution computing, passes through increment
Superposition calculation goes out the parameter value of current PID；(v) the output valve of controlled quentity controlled variable, is drawn by PID arithmetic, cable is passed through by host computer
Modbus TCP communications are carried out with PLC controller, send output regulating command to PLC controller；(vi), PLC controller is led to again
RS-485 interfaces and pressure control meter communication are crossed, pressure control instrument adjusts the unlatching ratio of the dish valve between vacuum chamber and vacuum pump, from
And realize and the real-time of vacuum chamber pressure is adjusted.
The solution have the advantages that the parameter of the PID of pressure control instrument is modified in real time online, it is assumed that Xiang Zhen
The flow that empty room is filled with growth gasses is fixed, by the output regulation disc valve aperture of pressure control instrument, realizes vacuum chamber pressure
Accurate control in the range of 1-30mbar, can meet different pressures at different moments is precisely controlled requirement.
Brief description of the drawings
Fig. 1 is the structure diagram of adaptive fuzzy crystal growth pressure control system of the present invention；
Fig. 2 is control schematic diagram of the present invention；
Fig. 3 is control flow chart of the present invention.
Embodiment
Below in conjunction with the accompanying drawings and example, the embodiment of the present invention is described in further detail.
As shown in Figure 1, 2, 3, it is shown, it is vapor phase method growing silicon carbice crystals control pressurer system of the present invention, including vacuum
Room, pressure sensor, pressure control instrument, dish valve, PLC module, upper computer module, vacuum pump, before crystal growth, first to vacuum chamber
Vacuumized, treat that vacuum chamber pressure is evacuated to 10-5During mbar, stopping vacuumizes and Ar to 400mbar is filled into vacuum chamber, afterwards
Start vacuum chamber being warming up to 2300-2400 °, after vacuum room temperature reaches balance, the pressure value of vacuum chamber is about stablized
800mbar or so, it is desirable to realize accurate control of the vacuum chamber pressure in the range of 10mbar；
Then begin to enter crystal growth and pressure control stage,
(i), the pressure set points in host computer setting crystal growth each period,
(ii), pressure sensor gathers current force samples value y (k) and uploads host computer, calculates：
Error e=r (k)-y (k),
Error rate ec=e (k)-e (k-1),
Wherein：Y (k) is current pressure measured value, r (k) is current pressure setting value, e is represented as pressure control error, e (k) is
Current step pressure control error, e (k-1) are the change rate that previous step pressure controls error, ec representative pressures control error；
(iii), e and ec are blurred according to fuzzy rule, by fuzzy control rule table draw pressure control instrument PID Kp,
The variation delta kp, Δ ki, Δ kd of this 3 parameters of Ki, Kd；
(iv) the increment of actual pid parameter, is drawn by ambiguity solution computing, the parameter of current PID is gone out by increment superposition calculation
Value；
(v) the output valve of controlled quentity controlled variable, is drawn by PID arithmetic, Modbus is carried out by cable and PLC controller by host computer
TCP communication, sends output regulating command to PLC controller；
(vi), PLC controller is adjusted between vacuum chamber and vacuum pump by RS-485 interfaces and pressure control meter communication, pressure control instrument again
Dish valve unlatching ratio, reached real-time in the range of 10mbar of vacuum chamber pressure adjust, control.
Embodiment of above is merely to illustrate the present invention, and not limitation of the present invention, in relation to the common of technical field
Technical staff, without departing from the spirit and scope of the present invention, can also make a variety of changes and modification, therefore so
Equivalent technical solution falls within scope of the invention, and scope of patent protection of the invention should be defined by the claims.
Claims (1)
- A kind of 1. Fuzzy Adaptive Control Scheme of vapor phase method crystal growth pressure system, it is characterised in that：Control method is upper Position machine carries out fuzzy calculating according to the pressure target value that the pressure measuring value of instrument and technologist set, and controls pressure control instrument The PID control output of table, vacuum chamber pressure is adjusted to adjust the unlatching ratio of the dish valve between vacuum chamber and vacuum pump in real time, Specifically include following steps,(i), the pressure set points in host computer setting crystal growth each period；(ii), pressure sensor gathers current force samples value y (k) and uploads host computer, calculates：Error e=r (k)-y (k),Error rate ec=e (k)-e (k-1),Wherein：Y (k) is current pressure measured value, r (k) is current pressure setting value, e is represented as pressure control error, e (k) is Current step pressure control error, e (k-1) are the change rate that previous step pressure controls error, ec representative pressures control error；(iii), e and ec are blurred according to fuzzy rule, by fuzzy control rule table draw pressure control instrument PID Kp, The variation delta kp, Δ ki, Δ kd of this 3 parameters of Ki, Kd；(iv) the increment of actual pid parameter, is drawn by ambiguity solution computing, gone out by increment superposition calculation current PID Kp, Ki, Kd parameter value；(v) the output valve of controlled quentity controlled variable, is drawn by PID arithmetic, Modbus is carried out by cable and PLC controller by host computer TCP communication, sends output regulating command to PLC controller；(vi), PLC controller is adjusted between vacuum chamber and vacuum pump by RS-485 interfaces and pressure control meter communication, pressure control instrument again Dish valve unlatching ratio, adjusted so as to fulfill to the real-time of vacuum chamber pressure.
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| CN201711309540.8A CN107937979A (en) | 2017-12-11 | 2017-12-11 | The Fuzzy Adaptive Control Scheme of vapor phase method crystal growth pressure system |
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| CN201711309540.8A CN107937979A (en) | 2017-12-11 | 2017-12-11 | The Fuzzy Adaptive Control Scheme of vapor phase method crystal growth pressure system |
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| CN107937979A true CN107937979A (en) | 2018-04-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111501095A (en) * | 2020-05-19 | 2020-08-07 | 青岛佳恩半导体有限公司 | Silicon carbide single crystal growth device and method |
| CN112210825A (en) * | 2020-09-15 | 2021-01-12 | 中国电子科技集团公司第四十六研究所 | Pressure self-adaptive fuzzy control method for large-flow gas phase method crystal growth |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806603A1 (en) * | 1996-05-06 | 1997-11-12 | Korea Lube-Tech Co., Ltd. | Method and apparatus for automatically feeding lubricating oil using microcomputer |
| CN101117727A (en) * | 2007-07-16 | 2008-02-06 | 中国科学院上海硅酸盐研究所 | Gas phase crystal growth pressure automatic control system |
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2017
- 2017-12-11 CN CN201711309540.8A patent/CN107937979A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806603A1 (en) * | 1996-05-06 | 1997-11-12 | Korea Lube-Tech Co., Ltd. | Method and apparatus for automatically feeding lubricating oil using microcomputer |
| CN101117727A (en) * | 2007-07-16 | 2008-02-06 | 中国科学院上海硅酸盐研究所 | Gas phase crystal growth pressure automatic control system |
Non-Patent Citations (2)
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| 富宏亚等: "《智能加工技术与系统》", 30 September 2006, 哈尔滨工业大学出版社 * |
| 张世生编著: "《可编程控制器应用技术》", 31 May 2009, 西安电子科技大学出版社 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111501095A (en) * | 2020-05-19 | 2020-08-07 | 青岛佳恩半导体有限公司 | Silicon carbide single crystal growth device and method |
| CN111501095B (en) * | 2020-05-19 | 2021-03-05 | 青岛佳恩半导体有限公司 | Silicon carbide single crystal growth device and method |
| CN112210825A (en) * | 2020-09-15 | 2021-01-12 | 中国电子科技集团公司第四十六研究所 | Pressure self-adaptive fuzzy control method for large-flow gas phase method crystal growth |
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