CN111501095A - Silicon carbide single crystal growth device and method - Google Patents
Silicon carbide single crystal growth device and method Download PDFInfo
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- CN111501095A CN111501095A CN202010422243.XA CN202010422243A CN111501095A CN 111501095 A CN111501095 A CN 111501095A CN 202010422243 A CN202010422243 A CN 202010422243A CN 111501095 A CN111501095 A CN 111501095A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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Abstract
The invention provides a silicon carbide single crystal growth device and a method thereof, which comprises a reaction device assembly, a lifting device assembly and an air pressure control assembly, wherein the air pressure control assembly is internally provided with an adjusting device assembly, a first air pump fills inert gas into a gas storage bottle, a third induction coil heats the inert gas, a first control valve is opened to input the heated inert gas in the gas storage bottle into the device, the problem of excessive crystal growth defects caused by the temperature field change of the conventional PVT method is solved, the lifting device assembly is internally provided with a motor, a speed reducer, a connecting block, a screw rod, a second bevel gear and a third bevel gear, the motor drives the third bevel gear to rotate, the third bevel gear drives the second bevel gear to rotate, the second bevel gear is meshed with the screw rod, the screw rod drives the connecting block to move upwards, and the connecting block drives a seed crystal support platform device to move upwards and stably, therefore, the silicon carbide single crystal growth device has the effects of keeping the temperature zone where the seed crystal is positioned stable and keeping the crystal growth speed block.
Description
Technical Field
The invention relates to the technical field of silicon carbide crystal growth, in particular to a silicon carbide single crystal growth device and a method thereof.
Background
Silicon carbide single crystal is one of the most important third-generation semiconductor materials, and is widely applied to the fields of power electronics, radio frequency devices, photoelectronic devices and the like because of the excellent properties of large forbidden bandwidth, high saturated electron mobility, strong breakdown field, high thermal conductivity and the like, and the growth process of growing the silicon carbide single crystal by the PVT method is carried out in a closed graphite crucible, but the method has several problems: 1, when the pressure of the inert gas in the reaction area is adjusted, the temperature difference between the external inert gas and the inert gas in the reaction area is too large, so that the temperature gradient in the reaction area is damaged when the pressure is adjusted, and the silicon carbide crystal has the defects of increase in the number of micropipes, small-angle grain boundary dislocation, stacking fault and the like, so that the quality of the generated silicon carbide crystal is reduced; 2, the distance between the seed crystal and the raw material area is shortened in the growth process, so that the temperature area where the seed crystal is positioned is changed, and the growth speed of the crystal is reduced.
Disclosure of Invention
The embodiment of the invention provides a silicon carbide single crystal growth device and a method thereof, and solves the problems that the crystal growth speed is reduced due to excessive crystal growth defects caused by temperature field change and temperature zone change of seed crystals caused by pressure regulation in the conventional PVT method for growing silicon carbide single crystals by adding a lifting device component and an air pressure control component.
In view of the above problems, the technical solution proposed by the present invention is:
an apparatus for growing a silicon carbide single crystal, comprising:
the reaction device assembly comprises a reaction furnace, a first induction coil, a raw material, a seed crystal supporting platform device and a heat insulation layer;
wherein the first induction coil is arranged at the outer side of the reaction furnace, the raw materials are arranged inside the reaction furnace, a first through hole is formed at the top of the reaction furnace, a second groove is formed at one side of the first through hole, the seed crystal support platform device is respectively arranged inside the first through hole and the second groove, the reaction furnace is arranged inside the heat preservation layer, the seed crystal support platform device comprises a connecting column, a seed crystal support, a limiting block, a second induction coil, a connecting seat and a first ball, the connecting column is arranged inside the first through hole, the seed crystal support is arranged at the bottom of the connecting column, the limiting block is arranged at one side of the connecting column, the second induction coil is arranged at the outer side of the limiting block, the connecting seat is arranged at the top of the connecting column, and a first groove is formed on the inner wall surface of the connecting seat, a first ball is arranged in the first groove;
the lifting device assembly comprises a device assembly shell, a bearing, a first rotating shaft, a first bevel gear, a second bevel gear, a third bevel gear, a second rotating shaft, a speed reducer, a motor, a screw rod, a connecting block, a heat insulation block and a second ball;
wherein the device component housing is mounted on the top of the heat insulating layer, the bearing is mounted on one side of the device component housing, the first rotating shaft, the first bevel gear, the second bevel gear, the third bevel gear, the second rotating shaft, the speed reducer and the motor are sequentially arranged in the device component housing from left to right, one end of the first rotating shaft is mounted in the bearing, the other end of the first rotating shaft is mounted in the first bevel gear, the tooth surface of the first bevel gear is meshed with one side of the tooth surface of the second bevel gear, the tooth surface of the third bevel gear is meshed with the other side of the tooth surface of the second bevel gear, one end of the second rotating shaft is mounted in the third bevel gear, and the other end of the second rotating shaft is mounted on one side of the speed reducer, the screw rod sequentially penetrates through the second bevel gear, the device assembly shell and the heat preservation layer from top to bottom, the connecting block is installed at the bottom of the screw rod, a fifth groove is formed in the surface of the connecting block, a fourth groove is formed in the bottom of the second bevel gear, a third groove is formed in the bottom of the inner wall of the device assembly shell, a second ball is arranged between the third groove and the fourth groove, and the heat insulation block is arranged between the screw rod and the device assembly shell and between the heat preservation layer and the device assembly shell;
the air pressure control assembly comprises a pressure chamber, a pressure gauge and an adjusting device assembly;
the reaction device assembly is arranged in the pressure chamber, the pressure gauge is arranged on one side of the pressure chamber, the pressure gauge is used for detecting the pressure inside the pressure chamber, the adjusting device assembly is arranged at the bottom of the pressure chamber, the adjusting device assembly comprises an adjusting device shell, a first air pump, a gas storage device, a second air pump, a one-way valve, a first connecting pipe, a first control valve, a second connecting pipe, a third connecting pipe and a second control valve, the first air pump, the gas storage device and the second air pump are sequentially arranged in the adjusting device shell from left to right, the gas storage device comprises an air storage bottle, a third induction coil and a heat insulation layer, the one-way valve is arranged on one side of the first air pump, one end of the third connecting pipe is sequentially connected with the first air pump in a penetrating manner from left to right, The one-way valve with the insulating layer with the gas bomb intercommunication, first control valve set up in the top of first air pump, the one end of first connecting pipe with the gas bomb intercommunication, the other end of first connecting pipe through connection in proper order the insulating layer first control valve adjusting device casing the pressure chamber with the heat preservation, the second control valve set up in the top of second air pump, the one end of second connecting pipe through connection in proper order the adjusting device casing the second air pump the second control valve the pressure chamber with the heat preservation.
In order to better realize the technical scheme of the invention, the following technical measures are also adopted.
Furthermore, the reacting furnace, the connecting column and the limiting block are made of graphite, the section of the reacting furnace is trapezoidal, the bottom of the reacting furnace is a high-temperature area, and the top of the reacting furnace is a low-temperature area.
Further first induction coil is used for heating the reacting furnace, second induction coil is used for heating the spliced pole, third induction coil is used for heating the gas bomb, the outer wall of spliced pole with the inner wall clearance fit of first through-hole, the outer wall of stopper with clearance fit between the inner wall of first recess.
Furthermore, the shape and the size of the first bevel gear and the third bevel gear are consistent, the first bevel gear and the third bevel gear are symmetrically arranged, the second bevel gear is in threaded connection with the screw rod, and the heat insulation block is in threaded connection with the screw rod.
Furthermore, the shape and size of the first groove are consistent with those of the fifth groove, the first groove and the fifth groove are annular grooves, the first ball is arranged between the first groove and the fifth groove, and the shape of the first groove and the shape of the fifth groove are matched with that of the first ball.
Furthermore, one end of the first connecting pipe, which is close to the heat insulation layer, is used for being simultaneously communicated with the pressure chamber and the heat insulation layer, and one end of the second connecting pipe, which is close to the heat insulation layer, is used for being simultaneously communicated with the pressure chamber and the heat insulation layer.
Further, the first air pump is used for filling inert gas into the gas storage bottle through a third connecting pipe, and the second air pump is used for emptying the pressure chamber and the air in the reaction device assembly through the second connecting pipe.
Further, the second induction coil is used for keeping the temperature of the connecting column consistent with the temperature above the reaction furnace.
A method for growing a silicon carbide single crystal, comprising the steps of:
s1, filling raw materials, filling the raw materials to the bottom of the reaction furnace, and installing seed crystals on the seed crystal support;
s2, vacuumizing for the first time, opening a second control valve, starting a second air pump, exhausting air in the pressure chamber, the reaction device assembly and the lifting device assembly through a second connecting pipe, closing the second control valve when the vacuum degree of the pressure chamber is 0.05-0.1 mPa by observing an air pressure gauge, and closing the second air pump;
s3, filling protective gas, starting a first air pump, filling inert gas into a gas storage bottle, heating the inert gas to the temperature of 1000-;
s4, controlling growth, starting a motor, reducing speed through a speed reducer and driving a second rotating shaft to rotate, driving a third bevel gear to rotate through the second rotating shaft, driving a second gear to rotate through the third bevel gear, driving a lead screw to move upwards through a second bevel gear, driving a seed crystal supporting platform device to move upwards through a connecting block through the lead screw, enabling the seed crystal to keep a temperature zone where the seed crystal is located all the time in the growth process, keeping a temperature field in the reaction furnace stable, and starting a second control valve to reduce the pressure of a pressure chamber to 20mbar and keep the pressure for 30 hours;
s5, boosting pressure, opening a first control valve, filling inert gas in the gas storage cylinder into the pressure chamber and the reaction device assembly, keeping the gas pressure of the inert gas in the pressure chamber at 60mbr, and keeping for 20 hours;
and S6, cooling, and slowly reducing the pressure and the temperature to room temperature to obtain the silicon carbide single crystal.
Compared with the prior art, the invention has the beneficial effects that:
1. through setting up the atmospheric pressure control subassembly to set up the adjusting device subassembly in the atmospheric pressure control subassembly, first air pump fills inert gas into the gas bomb, and the third induction coil heats inert gas, opens inside first control valve imports the device with the inert gas of heating in the gas bomb, has improved the crystal growth defect too much problem that the regulating pressure that current PVT method growth silicon carbide single crystal exists leads to the temperature field change to lead to.
2. Through setting up the hoisting device subassembly, set up the motor in the hoisting device subassembly, the speed reducer, the connecting block, the lead screw, second bevel gear and third bevel gear, the torque is promoted after the speed reducer reduces the rotational speed of motor, promote the stability of motor transmission, drive third bevel gear and rotate, third bevel gear drives second bevel gear and rotates, second bevel gear meshing lead screw, drive lead screw upward movement, the lead screw drives the connecting block upward movement, the connecting block drives the seed crystal and holds in the palm platform device steady motion that makes progress, thereby make silicon carbide monocrystal growth device have the warm area that keeps the seed crystal place stable, the effect of crystal growth speed piece.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
FIG. 1 is a schematic cross-sectional view of an apparatus for growing a silicon carbide single crystal according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a reactor according to an embodiment of the present invention;
FIG. 3 is a schematic view of the structure at A in FIG. 1;
FIG. 4 is a schematic view of the structure at B in FIG. 1;
FIG. 5 is a schematic view of the structure of FIG. 1 at C;
FIG. 6 is a flow chart of a method for growing a silicon carbide single crystal according to an embodiment of the present invention.
Reference numerals:
1-cleaning component, 1-reaction device component; 101-a reaction furnace; 102-a first induction coil; 103-raw material; 104-seed crystal support platform device; 10401-connecting column; 10402-seed holder; 10403-a limiting block; 10404 — a second induction coil; 10405-a connecting base; 10406-a first groove; 10407-a first ball bearing; 105-an insulating layer; 106 — a first via; 107-a second groove; 2-a lifting device assembly; 201-device assembly housing; 202-a bearing; 203-a first rotating shaft; 204-a first bevel gear; 205-a second bevel gear; 206-a third bevel gear; 207-a second shaft; 208-a speed reducer; 209-motor; 2010-lead screw; 2011-connecting block; 2012-a third groove; 2013-a fourth groove; 2014-fifth groove; 2015-insulating blocks; 2016-a second ball bearing; 3-a pneumatic control assembly; 301-a pressure chamber; 302-pressure gauge; 303-adjusting device components; 30301-adjusting the device housing; 30302-first air pump; 30303-gas storage means; 3030301-gas cylinder; 3030302-third induction coil; 3030303-a thermal insulation layer; 30304-second air pump; 30305-one-way valve; 30306-first connecting tube; 30307-a first control valve; 30308-second connecting tube; 30309-third connecting tube; 303010-second control valve.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Referring to fig. 1-5, a reaction device assembly 1, where the reaction device assembly 1 includes a reaction furnace 101, a first induction coil 102, a raw material 103, a seed holder 10402 platform device 104, and an insulating layer 105, where the first induction coil 102 is disposed outside the reaction furnace 101, the first induction coil 102 is used to heat the reaction furnace 101, the first induction coil 102 heats the reaction furnace 101 at different temperatures according to different distributions on the surface of the reaction furnace 101, a temperature field is formed inside the reaction furnace 101, the raw material 103 is disposed inside the reaction furnace 101, a first through hole 106 is formed at the top of the reaction furnace 101, a second groove 107 is formed at one side of the first through hole 106, the seed holder 10402 platform device 104 is respectively mounted inside the first through hole 106 and the second groove 107, the reaction furnace 101 is disposed inside the insulating layer 105, the seed crystal support 10402 platform device 104 comprises a connecting column 10401, a seed crystal support 10402, a limiting block 10403, a second induction coil 10404, a connecting seat 10405 and first balls 10407, the connecting column 10401 is installed inside the first through hole 106, the seed crystal support 10402 is installed at the bottom of the connecting column 10401, the limiting block 10403 is installed on one side of the connecting column 10401, the second induction coil 10404 is arranged on the outer side of the limiting block 10403, the second induction coil 10404 is used for heating the connecting column 10401, the connecting seat 10405 is installed at the top of the connecting column 10401, a first groove 10406 is formed in the inner wall surface of the connecting seat 10405, the first balls 10407 are arranged inside the first groove 10406, a lifting device assembly 2 is arranged, and the lifting device assembly 2 comprises a device assembly shell 201, a bearing 202, a first rotating shaft 203, a first bevel gear 204, a second bevel gear 205, A third bevel gear 206, a second rotating shaft 207, a speed reducer 208, a motor 209, a screw 2010, a connecting block 2011, a heat insulation block 2015 and a second ball 2016, wherein the device assembly housing 201 is mounted on the top of the heat insulation layer 105, the bearing 202 is mounted on one side of the device assembly housing 201, the first rotating shaft 203, the first bevel gear 204, the second bevel gear 205, the third bevel gear 206, the second rotating shaft 207, the speed reducer 208 and the motor 209 are sequentially arranged inside the device assembly housing 201 from left to right, the first bevel gear 204 and the third bevel gear 206 are identical in shape and size, the first bevel gear 204 and the third bevel gear 206 are symmetrically arranged, the second bevel gear 205 is in threaded connection with the screw 2010, and the heat insulation block 2015 is in threaded connection with the screw 2010, one end of the first rotating shaft 203 is installed inside the bearing 202, the other end of the first rotating shaft 203 is installed inside the first bevel gear 204, the tooth surface of the first bevel gear 204 is engaged with one side of the tooth surface of the second bevel gear 205, the tooth surface of the third bevel gear 206 is engaged with the other side of the tooth surface of the second bevel gear 205, one end of the second rotating shaft 207 is installed inside the third bevel gear 206, the other end of the second rotating shaft 207 is installed on one side of the speed reducer 208, the screw 2010 sequentially penetrates through the second bevel gear 205, the device assembly housing 201 and the heat-insulating layer 105 from top to bottom, the connecting block 2011 is installed at the bottom of the screw 2010, the surface of the connecting block 2011 is provided with a fifth groove 2014, and the bottom of the second bevel gear 205 is provided with a fourth groove 2013, a third groove 2012 is formed in the bottom of the inner wall of the device component housing 201, a second ball 2016 is disposed between the third groove 2012 and the fourth groove 2013, the heat insulation block 2015 is disposed between the screw 2010 and the device component housing 201 and the heat insulation layer 105, the air pressure control component 3 includes a pressure chamber 301, a pressure gauge 302 and an adjusting device component 303, wherein the reaction device component 1 is disposed inside the pressure chamber 301, the pressure gauge 302 is disposed on one side of the pressure chamber 301, the pressure gauge 302 is used for detecting the pressure inside the pressure chamber 301, the adjusting device component 303 is mounted at the bottom of the pressure chamber 301, and the adjusting device component 303 includes an adjusting device housing 30301, a first air pump 30302, a gas storage device 30303, a second air pump 30304, a one-way valve 30305, a first connecting pipe 30306, a second connecting pipe 2016, A first control valve 30307, a second connecting pipe 30308, a third connecting pipe 30309 and a second control valve 303010, wherein the first air pump 30302, the air storage device 30303 and the second air pump 30304 are sequentially installed inside the adjusting device shell 30301 from left to right, the air storage device 30303 comprises an air storage bottle 3030301, a third induction coil 3030302 and a heat insulation layer 3030303, the one-way valve 30305 is arranged on one side of the first air pump 30302, one end of the third connecting pipe 30309 is sequentially connected with the first air pump 30302, the one-way valve 30305 and the heat insulation layer 3030303 in a penetrating manner from left to right and is communicated with the air storage bottle 3030301, the first control valve 30307 is arranged above the first air pump 30302, one end of the first connecting pipe 30306 is communicated with the air storage bottle 3030301, and the other end of the first connecting pipe 30306 is sequentially connected with the heat insulation layer 3030303, the first control valve 30307, the adjusting device shell 30301, the third connecting pipe 30309, The pressure chamber 301 and the insulating layer 105, the second control valve 303010 is disposed above the second air pump 30304, one end of the second connection pipe 30308 is sequentially connected to the adjusting device housing 30301, the second air pump 30304, the second control valve 303010, the pressure chamber 301 and the insulating layer 105 in a penetrating manner, the first air pump 30302 is used for filling inert gas into the air storage bottle 3030301 through the third connection pipe 30309, the second air pump 30304 is used for evacuating air in the pressure chamber 301 and the reaction device assembly 1 through the second connection pipe 30308, one end of the first connection pipe 30306 close to the insulating layer 105 is used for simultaneously communicating with the pressure chamber 301 and the insulating layer 105, one end of the second connection pipe 30308 close to the insulating layer 105 is used for simultaneously communicating with the pressure chamber 301 and the insulating layer 105, the first air pump 30302 fills inert gas into the air storage bottle 3030301, third induction coil 3030302 heats the inert gas, open first control valve 30307 and input the inert gas of heating in the gas bomb 3030301 inside the device, the problem that the regulation pressure that has existed in the growth of silicon carbide single crystal of current PVT method leads to the crystal growth defect that the temperature field change leads to too much is improved, speed reducer 208 promotes the moment of torsion after reducing the rotational speed of motor 209, promote the stability of motor 209 transmission, drive third bevel gear 206 and rotate, third bevel gear 206 drives second bevel gear 205 and rotates, second bevel gear 205 meshes lead screw 2010, drive lead screw 2010 upward movement, lead screw 2010 drives connecting block 2011 upward movement, connecting block 2011 drives seed holder 10402 platform device 104 upward steady movement, thereby make the growth of silicon carbide single crystal device have the effect of keeping the stability of seed crystal place, crystal growth temperature zone block.
The embodiment of the invention is also realized by the following technical scheme.
Referring to fig. 1, in the embodiment of the present invention, the reaction furnace 101, the connecting column 10401, and the limiting block 10403 are made of graphite, the cross section of the reaction furnace 101 is trapezoidal, the bottom of the reaction furnace 101 is a high temperature region, the top of the reaction furnace 101 is a low temperature region, and the second induction coil 10404 is configured to maintain the temperature of the connecting column 10401 to be consistent with the temperature above the reaction furnace 101.
In this embodiment, raw materials 103 that the bottom of the inner wall of reacting furnace 101 set up, raw materials 103 is adding sublimation in-process and is being close to the top central zone along the inner wall of reacting furnace 101, guide gaseous phase component's direction of transport, realize the continuous growth of crystal, first induction coil 102 and second induction coil 10404 heat reacting furnace 101 and spliced pole 10401 respectively simultaneously, the temperature at reacting furnace 101 top keeps unanimous with spliced pole 10401's temperature, in the process of the rising of spliced pole 10401, influence the temperature variation at reacting furnace 101 top as far as possible, thereby make silicon carbide single crystal growth device have keep the warm area at seed crystal place stable, the effect that the crystal growth defect is few.
Referring to fig. 1, in this embodiment, the third induction coil 3030302 is used for heating the gas cylinder 3030301, the outer wall of the connecting column 10401 is in clearance fit with the inner wall of the first through hole 106, and the outer wall of the limiting block 10403 is in clearance fit with the inner wall of the first groove 10406.
In this embodiment, after the inert gas is filled into the gas cylinder 3030301, the gas cylinder 3030301 is heated by the third induction coil 3030302 to raise the temperature of the inert gas, and the temperature field inside the silicon carbide single crystal growth apparatus is not changed after the heated inert gas enters the silicon carbide single crystal growth apparatus, so that the silicon carbide single crystal growth apparatus has the effects of keeping the temperature zone where the seed crystal is located stable and reducing crystal growth defects.
Referring to fig. 1 to 5, the first recess 10406 and the fifth recess 2014 have the same shape and size, the first recess 10406 and the fifth recess 2014 are annular grooves, the first ball 10407 is disposed between the first recess 10406 and the fifth recess 2014, and the first recess 10406 and the fifth recess 2014 have the shape matching the shape of the first ball 10407.
In this embodiment, the lead screw 2010 drives the connecting block 2011 to rise, and the connecting block 2011 can be moved inside the connecting seat 10405, and the torque transmitted from the lead screw 2010 to the connecting block 2011 by the second bevel gear 205 is eliminated, so that damage to the connecting column 10401 is avoided, and the service life of the silicon carbide single crystal growth device is shortened.
Referring to FIGS. 1 to 6, a method for growing a silicon carbide single crystal, comprising the steps of:
s1, filling the raw material 103 to the bottom of the reaction furnace 101, and mounting the seed crystal to the seed crystal holder 10402;
s2, first vacuuming, opening the second control valve 303010, starting the second air pump 30304, exhausting the air in the pressure chamber 301, the reaction device assembly 1 and the lifting device assembly 2 through the second connection pipe 30308, closing the second control valve 303010 when the vacuum degree of the pressure chamber 301 is 0.05mPa-0.1mPa by observing the barometer, and closing the second air pump 30304;
s3, filling protective gas, starting a first gas pump 30302, filling inert gas into a gas storage bottle 3030301, heating the inert gas to the temperature of 1000-;
s4, growth control, starting a motor 209, decelerating through a speed reducer 208 and driving a second rotating shaft 207 to rotate, driving a third bevel gear 206 to rotate by the second rotating shaft 207, driving a second gear to rotate by the third bevel gear 206, driving a lead screw 2010 to move upwards by a second bevel gear 205, driving a seed crystal holder 10402 platform device 104 to move upwards by the lead screw 2010 through a connecting block 2011, so that a temperature zone where a seed crystal is located is always kept in the growth process of the seed crystal, a temperature field in the reaction furnace 101 is kept stable, starting a second control valve 303010, reducing the pressure of a pressure chamber 301 to 20mbar, and keeping the pressure for 30 hours;
s5, boosting pressure, opening a first control valve 30307, filling inert gas in a gas storage cylinder 3030301 into the pressure chamber 301 and the reaction device assembly 1, keeping the gas pressure of the inert gas in the pressure chamber 301 at 60mbr, and keeping for 20 hours;
and S6, cooling, and slowly reducing the pressure and the temperature to room temperature to obtain the silicon carbide single crystal.
The method comprises the following specific implementation steps: filling a raw material 103 to the bottom of a reaction furnace 101, installing a seed crystal to a seed crystal holder 10402, opening a second control valve 303010, starting a second air pump 30304, exhausting air in a pressure chamber 301, a reaction device assembly 1 and a lifting device assembly 2 through a second connecting pipe 30308, closing the second control valve 303010 when the vacuum degree of the pressure chamber 301 is 0.05-0.1 mPa by observing an air pressure gauge, closing the second air pump 30304, starting the first air pump 30302, filling inert gas into a gas storage bottle 3030301, heating the inert gas to 1000-, keeping the gas pressure of the inert gas in the pressure chamber 301 at 1000mbr, starting the motor 209, reducing the speed through the speed reducer 208 and driving the second rotating shaft 207 to rotate, driving the third bevel gear 206 to rotate by the second rotating shaft 207, driving the second gear to rotate by the third bevel gear 206, driving the lead screw 2010 to move upwards by the second bevel gear 205, driving the seed crystal holder 10402 platform device 104 to move upwards by the lead screw 2010 through the connecting block 2011, so that the seed crystal is always kept in the temperature region where the seed crystal is located in the growth process, the temperature field in the reaction furnace 101 is kept stable, starting the second control valve 303010, reducing the pressure in the pressure chamber 301 to 20mbar, keeping the pressure for 30 hours, opening the first control valve 30307, filling the inert gas in the gas storage bottle 3030301 into the pressure chamber 301 and the reaction device assembly 1, keeping the gas pressure of the inert gas in the pressure chamber 301 at 60mbr, keeping the gas pressure for 20 hours, and slowly reducing the pressure and the temperature to, the silicon carbide single crystal is obtained, so that the silicon carbide single crystal growing device has the effects of reducing crystal growth defects, keeping a temperature zone where the seed crystal is positioned stable and keeping the crystal growth speed.
It should be noted that the specific model specifications of the motor 209, the first air pump 30302 and the second air pump 30304 need to be determined by model selection according to the actual specification of the device, and the specific model selection calculation method adopts the prior art, so detailed description is omitted.
The power supply of the motor 209, the first air pump 30302 and the second air pump 30304 and the principle thereof will be apparent to those skilled in the art and will not be described in detail herein.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (9)
1. An apparatus for growing a silicon carbide single crystal, comprising:
the reaction device assembly comprises a reaction furnace, a first induction coil, a raw material, a seed crystal supporting platform device and a heat insulation layer;
wherein the first induction coil is arranged at the outer side of the reaction furnace, the raw materials are arranged inside the reaction furnace, a first through hole is formed at the top of the reaction furnace, a second groove is formed at one side of the first through hole, the seed crystal support platform device is respectively arranged inside the first through hole and the second groove, the reaction furnace is arranged inside the heat preservation layer, the seed crystal support platform device comprises a connecting column, a seed crystal support, a limiting block, a second induction coil, a connecting seat and a first ball, the connecting column is arranged inside the first through hole, the seed crystal support is arranged at the bottom of the connecting column, the limiting block is arranged at one side of the connecting column, the second induction coil is arranged at the outer side of the limiting block, the connecting seat is arranged at the top of the connecting column, and a first groove is formed on the inner wall surface of the connecting seat, a first ball is arranged in the first groove;
the lifting device assembly comprises a device assembly shell, a bearing, a first rotating shaft, a first bevel gear, a second bevel gear, a third bevel gear, a second rotating shaft, a speed reducer, a motor, a screw rod, a connecting block, a heat insulation block and a second ball;
wherein the device component housing is mounted on the top of the heat insulating layer, the bearing is mounted on one side of the device component housing, the first rotating shaft, the first bevel gear, the second bevel gear, the third bevel gear, the second rotating shaft, the speed reducer and the motor are sequentially arranged in the device component housing from left to right, one end of the first rotating shaft is mounted in the bearing, the other end of the first rotating shaft is mounted in the first bevel gear, the tooth surface of the first bevel gear is meshed with one side of the tooth surface of the second bevel gear, the tooth surface of the third bevel gear is meshed with the other side of the tooth surface of the second bevel gear, one end of the second rotating shaft is mounted in the third bevel gear, and the other end of the second rotating shaft is mounted on one side of the speed reducer, the screw rod sequentially penetrates through the second bevel gear, the device assembly shell and the heat preservation layer from top to bottom, the connecting block is installed at the bottom of the screw rod, a fifth groove is formed in the surface of the connecting block, a fourth groove is formed in the bottom of the second bevel gear, a third groove is formed in the bottom of the inner wall of the device assembly shell, a second ball is arranged between the third groove and the fourth groove, and the heat insulation block is arranged between the screw rod and the device assembly shell and between the heat preservation layer and the device assembly shell;
the air pressure control assembly comprises a pressure chamber, a pressure gauge and an adjusting device assembly;
the reaction device assembly is arranged in the pressure chamber, the pressure gauge is arranged on one side of the pressure chamber, the pressure gauge is used for detecting the pressure inside the pressure chamber, the adjusting device assembly is arranged at the bottom of the pressure chamber, the adjusting device assembly comprises an adjusting device shell, a first air pump, a gas storage device, a second air pump, a one-way valve, a first connecting pipe, a first control valve, a second connecting pipe, a third connecting pipe and a second control valve, the first air pump, the gas storage device and the second air pump are sequentially arranged in the adjusting device shell from left to right, the gas storage device comprises an air storage bottle, a third induction coil and a heat insulation layer, the one-way valve is arranged on one side of the first air pump, one end of the third connecting pipe is sequentially connected with the first air pump in a penetrating manner from left to right, The one-way valve with the insulating layer with the gas bomb intercommunication, first control valve set up in the top of first air pump, the one end of first connecting pipe with the gas bomb intercommunication, the other end of first connecting pipe through connection in proper order the insulating layer first control valve adjusting device casing the pressure chamber with the heat preservation, the second control valve set up in the top of second air pump, the one end of second connecting pipe through connection in proper order the adjusting device casing the second air pump the second control valve the pressure chamber with the heat preservation.
2. A silicon carbide single crystal growing apparatus according to claim 1, wherein: the reaction furnace, the connecting column and the limiting block are made of graphite, the section of the reaction furnace is trapezoidal, the bottom of the reaction furnace is a high-temperature area, and the top of the reaction furnace is a low-temperature area.
3. A silicon carbide single crystal growing apparatus according to claim 1, wherein: the first induction coil is used for heating the reaction furnace, the second induction coil is used for heating the connecting column, the third induction coil is used for heating the gas bomb, the outer wall of the connecting column is in clearance fit with the inner wall of the first through hole, and the outer wall of the limiting block is in clearance fit with the inner wall of the first groove.
4. A silicon carbide single crystal growing apparatus according to claim 1, wherein: the first bevel gear and the third bevel gear are identical in shape and size, the first bevel gear and the third bevel gear are symmetrically arranged, the second bevel gear is in threaded connection with the lead screw, and the heat insulation block is in threaded connection with the lead screw.
5. A silicon carbide single crystal growing apparatus according to claim 1, wherein: the first groove is consistent with the fifth groove in shape and size, the first groove and the fifth groove are annular grooves, the first ball is arranged between the first groove and the fifth groove, and the first groove and the fifth groove are matched with the first ball in shape.
6. A silicon carbide single crystal growing apparatus according to claim 1, wherein: the first connecting pipe is close to one end of the heat preservation layer and used for being communicated with the pressure chamber and the heat preservation layer at the same time, and the second connecting pipe is close to one end of the heat preservation layer and used for being communicated with the pressure chamber and the heat preservation layer at the same time.
7. A silicon carbide single crystal growing apparatus according to claim 1, wherein: the first air pump is used for filling inert gas into the gas storage bottle through a third connecting pipe, and the second air pump is used for emptying the pressure chamber and the air in the reaction device assembly through the second connecting pipe.
8. A silicon carbide single crystal growing apparatus according to claim 1, wherein: the second induction coil is used for keeping the temperature of the connecting column consistent with the temperature above the reaction furnace.
9. A method for growing a silicon carbide single crystal, comprising the steps of:
s1, filling raw materials, filling the raw materials to the bottom of the reaction furnace, and installing seed crystals on the seed crystal support;
s2, vacuumizing for the first time, opening a second control valve, starting a second air pump, exhausting air in the pressure chamber, the reaction device assembly and the lifting device assembly through a second connecting pipe, closing the second control valve when the vacuum degree of the pressure chamber is 0.05-0.1 mPa by observing an air pressure gauge, and closing the second air pump;
s3, filling protective gas, starting a first air pump, filling inert gas into a gas storage bottle, heating the inert gas to the temperature of 1000-;
s4, controlling growth, starting a motor, reducing speed through a speed reducer and driving a second rotating shaft to rotate, driving a third bevel gear to rotate through the second rotating shaft, driving a second gear to rotate through the third bevel gear, driving a lead screw to move upwards through a second bevel gear, driving a seed crystal supporting platform device to move upwards through a connecting block through the lead screw, enabling the seed crystal to keep a temperature zone where the seed crystal is located all the time in the growth process, keeping a temperature field in the reaction furnace stable, and starting a second control valve to reduce the pressure of a pressure chamber to 20mbar and keep the pressure for 30 hours;
s5, boosting pressure, opening a first control valve, filling inert gas in the gas storage cylinder into the pressure chamber and the reaction device assembly, keeping the gas pressure of the inert gas in the pressure chamber at 60mbr, and keeping for 20 hours;
and S6, cooling, and slowly reducing the pressure and the temperature to room temperature to obtain the silicon carbide single crystal.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106119954A (en) * | 2016-08-31 | 2016-11-16 | 台州市能科技有限公司 | A kind of single-crystal silicon carbide manufactures device |
| CN107254715A (en) * | 2010-12-16 | 2017-10-17 | 株式会社电装 | Manufacture the device of single-crystal silicon carbide |
| CN107937979A (en) * | 2017-12-11 | 2018-04-20 | 中国电子科技集团公司第四十六研究所 | The Fuzzy Adaptive Control Scheme of vapor phase method crystal growth pressure system |
| CN209522952U (en) * | 2018-12-25 | 2019-10-22 | 戚祖强 | Large size silicon carbide crystals grower |
| CN110408998A (en) * | 2019-07-29 | 2019-11-05 | 江苏星特亮科技有限公司 | A kind of single-crystal silicon carbide continuous growing device and its growing method |
-
2020
- 2020-05-19 CN CN202010422243.XA patent/CN111501095B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107254715A (en) * | 2010-12-16 | 2017-10-17 | 株式会社电装 | Manufacture the device of single-crystal silicon carbide |
| CN106119954A (en) * | 2016-08-31 | 2016-11-16 | 台州市能科技有限公司 | A kind of single-crystal silicon carbide manufactures device |
| CN107937979A (en) * | 2017-12-11 | 2018-04-20 | 中国电子科技集团公司第四十六研究所 | The Fuzzy Adaptive Control Scheme of vapor phase method crystal growth pressure system |
| CN209522952U (en) * | 2018-12-25 | 2019-10-22 | 戚祖强 | Large size silicon carbide crystals grower |
| CN110408998A (en) * | 2019-07-29 | 2019-11-05 | 江苏星特亮科技有限公司 | A kind of single-crystal silicon carbide continuous growing device and its growing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114182341A (en) * | 2021-12-22 | 2022-03-15 | 季华实验室 | High-purity crystal growth system and method |
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