CN107935582A - 一种用于氧化锌压敏电阻器制备的材料 - Google Patents
一种用于氧化锌压敏电阻器制备的材料 Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 36
- 239000000463 material Substances 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 11
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 9
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims abstract description 9
- 229940075624 ytterbium oxide Drugs 0.000 claims abstract description 9
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 7
- 239000004327 boric acid Substances 0.000 claims description 7
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052769 Ytterbium Inorganic materials 0.000 abstract description 2
- -1 ytterbium ion Chemical class 0.000 abstract description 2
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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Abstract
本发明公开了一种用于氧化锌压敏电阻器制备的材料,由以下重量份组分组成:氧化锌93‑96份;氧化锡0.05‑1.3份;三氧化二铋1.5‑1.8份;氧化钇46‑49;氧化镱46‑49;二氧化硅9‑12。本发明引入了钇离子和镱离子,并添加了三氧化二铋,极大提升了氧化锌压敏材料的性能。
Description
技术领域
本发明涉及电子器件领域,尤其是涉及一种用于氧化锌压敏电阻器制备的材料。
背景技术
压敏电阻是一种限压型保护器件。利用压敏电阻的非线性特性,当过电压出现在压敏电阻的两极间,压敏电阻可以将电压钳位到一个相对固定的电压值,从而实现对后级电路的保护。近几年来,随着信息技术的迅速发展,电子设备的小型化、多功能化、高稳定性成为发展的必然趋势,作为保护半导体元件的压敏电阻也相应地向着轻薄、低压化、高可靠性方向发展。
而氧化锌压敏电阻器一直因其兼具工艺简单、成本低廉、使用方便等优点,获得了广泛应用。但现在由于汽车工业、通讯设备、铁路信号、微型电机及各种电子元器件需要轻薄的电阻器,电阻器元件厚度减薄后,不但元件的机械强度降低,而且通流容量减小,因此,如何寻求一种单位厚度的压敏电压值低、同时漏电流小的压敏功能材料,成了现在氧化锌制备行业急需要解决的问题。
发明内容
本发明提供了一种用于氧化锌压敏电阻器制备的材料,以解决现有的氧化锌压敏材料不能满足制造轻薄电阻器的需求的问题。
为了解决上述技术问题,本发明采用的技术方案概述如下:
一种用于氧化锌压敏电阻器制备的材料,由以下重量份的材料组成:
氧化锌93-96份;
氧化锡0.05-1.3份;
三氧化二铋1.5-1.8份;
氧化钇46-49;
氧化镱46-49;
二氧化硅9-12。
更进一步地,所述组分还包括硼酸0.05-0.08份。
更进一步地,所述氧化锌为纳米级氧化锌及微米级氧化锌中的任意一种或两种。
更进一步地,一种用于氧化锌压敏电阻器制备的材料,由以下重量份的材料组成:
氧化锌95份;
氧化锡1.2份;
三氧化二铋1.7份;
氧化钇47份;
氧化镱48份;
二氧化硅10份;
硼酸0.06份。
综上所述,由于采用了上述技术方案,本发明的有益效果是:
1.本发明的氧化锌压敏电阻材料中添加了三氧化二铋,能够促使烧结时形成陷阱和表面态而使氧化锌压敏电阻材料具有非线性,增加了压敏电阻材料的灵敏性;
2.本发明通过引入与锌离子半径相近的钇离子和镱离子(Y3+半径为0.088nm,Yb3+半径为0.09nm,Zn2+半径为0.06nm),所得到的压敏电阻材料的非线性系数、较低的泄露电流、较强的抗大电流能力;
3.本发明制得的纳米氧化锌压敏电阻材料具有良好的电学性能稳定性;
4.本发明的氧化锌压敏电阻材料的制备方法成本较低、原料易得、且制备方法简单,具有良好的应用前景。
具体实施方式
下面结合具体实施方式对本发明作进一步详细说明。本发明的实施方式包括但不限于下列实施例。
实施例1
一种用于氧化锌压敏电阻器制备的材料,由以下重量份的材料组成:氧化锌93份;氧化锡0.05份;三氧化二铋1.5份;氧化钇46;氧化镱46;二氧化硅9。
实施例2
一种用于氧化锌压敏电阻器制备的材料,由以下重量份的材料组成:氧化锌96份;氧化锡1.3份;
三氧化二铋1.8份;氧化钇49;氧化镱49;二氧化硅12;硼酸0.08份。
实施例3
一种用于氧化锌压敏电阻器制备的材料,由以下重量份的材料组成:氧化锌95份;氧化锡1.2份;三氧化二铋1.7份;氧化钇47份;氧化镱48份;二氧化硅10份;硼酸0.06份。
实施例4
一种用于氧化锌压敏电阻器制备的材料,由以下重量份的材料组成:氧化锌94份;氧化锡1份;三氧化二铋1.6份;氧化钇48;氧化镱48;二氧化硅11;硼酸0.05份。
如上所述即为本发明的实施例。本发明不局限于上述实施方式,任何人应该得知在本发明的启示下做出的结构变化,凡是与本发明具有相同或相近的技术方案,均落入本发明的保护范围之内。
Claims (4)
1.一种用于氧化锌压敏电阻器制备的材料,其特征在于,由以下重量份的材料组成:
氧化锌93-96份;
氧化锡0.05-1.3份;
三氧化二铋1.5-1.8份;
氧化钇46-49;
氧化镱46-49;
二氧化硅9-12。
2.如权利要求1所述的一种用于氧化锌压敏电阻器制备的材料,其特征在于,所述组分还包括硼酸0.05-0.08份。
3.如权利要求1所述的一种用于氧化锌压敏电阻器制备的材料,其特征在于,所述氧化锌为纳米级氧化锌及微米级氧化锌中的任意一种或两种。
4.如权利要求2所述的一种用于氧化锌压敏电阻器制备的材料,其特征在于,由以下重量份的材料组成:
氧化锌95份;
氧化锡1.2份;
三氧化二铋1.7份;
氧化钇47份;
氧化镱48份;
二氧化硅10份;
硼酸0.06份。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108675783A (zh) * | 2018-05-24 | 2018-10-19 | 江苏时瑞电子科技有限公司 | 一种用于氧化锌压敏电阻器的材料及其制备方法 |
CN108947521A (zh) * | 2018-09-20 | 2018-12-07 | 华蓥市职业教育培训中心 | 一种压敏电阻材料的制备方法 |
CN109053187A (zh) * | 2018-10-15 | 2018-12-21 | 安徽银点电子科技有限公司 | 一种高电位梯度的氧化锌压敏电阻材料及其制备方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108675783A (zh) * | 2018-05-24 | 2018-10-19 | 江苏时瑞电子科技有限公司 | 一种用于氧化锌压敏电阻器的材料及其制备方法 |
CN108947521A (zh) * | 2018-09-20 | 2018-12-07 | 华蓥市职业教育培训中心 | 一种压敏电阻材料的制备方法 |
CN109053187A (zh) * | 2018-10-15 | 2018-12-21 | 安徽银点电子科技有限公司 | 一种高电位梯度的氧化锌压敏电阻材料及其制备方法 |
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