CN107924143B - 控制束引导装置的方法和束引导装置 - Google Patents

控制束引导装置的方法和束引导装置 Download PDF

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Publication number
CN107924143B
CN107924143B CN201680051162.5A CN201680051162A CN107924143B CN 107924143 B CN107924143 B CN 107924143B CN 201680051162 A CN201680051162 A CN 201680051162A CN 107924143 B CN107924143 B CN 107924143B
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China
Prior art keywords
radiation
illumination
scanners
illumination radiation
projection exposure
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CN201680051162.5A
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English (en)
Chinese (zh)
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CN107924143A (zh
Inventor
M.帕特拉
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Publication of CN107924143A publication Critical patent/CN107924143A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laser Surgery Devices (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
CN201680051162.5A 2015-07-09 2016-07-08 控制束引导装置的方法和束引导装置 Active CN107924143B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015212878.4A DE102015212878A1 (de) 2015-07-09 2015-07-09 Strahlführungsvorrichtung
DE102015212878.4 2015-07-09
PCT/EP2016/066310 WO2017005912A2 (de) 2015-07-09 2016-07-08 Verfahren zur steuerung einer strahlführungsvorrichtung und strahlführungsvorrichtung

Publications (2)

Publication Number Publication Date
CN107924143A CN107924143A (zh) 2018-04-17
CN107924143B true CN107924143B (zh) 2021-04-23

Family

ID=56550191

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680051162.5A Active CN107924143B (zh) 2015-07-09 2016-07-08 控制束引导装置的方法和束引导装置

Country Status (4)

Country Link
KR (1) KR102700274B1 (de)
CN (1) CN107924143B (de)
DE (1) DE102015212878A1 (de)
WO (1) WO2017005912A2 (de)

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154527A (ja) * 1984-01-24 1985-08-14 Canon Inc 露光装置
US4653903A (en) * 1984-01-24 1987-03-31 Canon Kabushiki Kaisha Exposure apparatus
US5091744A (en) * 1984-02-13 1992-02-25 Canon Kabushiki Kaisha Illumination optical system
US4788698A (en) * 1984-04-15 1988-11-29 Hitachi, Ltd. X-ray exposure system
US4820899A (en) * 1987-03-03 1989-04-11 Nikon Corporation Laser beam working system
JP2611682B2 (ja) * 1995-02-10 1997-05-21 株式会社ニコン 半導体製造装置
EP0955641B1 (de) 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
DE19935404A1 (de) 1999-07-30 2001-02-01 Zeiss Carl Fa Beleuchtungssystem mit mehreren Lichtquellen
JP3810039B2 (ja) * 1998-05-06 2006-08-16 キヤノン株式会社 ステージ装置
US6229639B1 (en) * 1998-07-09 2001-05-08 Cymer, Inc. Multiplexer for laser lithography
JP2000260684A (ja) * 1999-03-08 2000-09-22 Nikon Corp 露光装置、及び照明装置
SG139554A1 (en) * 2002-12-20 2008-02-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP4195434B2 (ja) * 2003-10-31 2008-12-10 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及びデバイス製造方法
DE10358225B3 (de) 2003-12-12 2005-06-30 Forschungszentrum Karlsruhe Gmbh Undulator und Verfahren zu dessen Betrieb
KR20060126740A (ko) * 2004-02-12 2006-12-08 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 소프트 ｘ선 가공장치 및 소프트 ｘ선 가공방법
DE102004013886A1 (de) * 2004-03-16 2005-10-06 Carl Zeiss Smt Ag Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem
US20070152171A1 (en) 2005-12-30 2007-07-05 Michael Goldstein Free electron laser
CN1858651A (zh) * 2006-06-02 2006-11-08 上海微电子装备有限公司 一种曝光装置
US7697115B2 (en) * 2006-06-23 2010-04-13 Asml Holding N.V. Resonant scanning mirror
DE102006059024A1 (de) * 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
NL1036323A1 (nl) * 2007-12-27 2009-06-30 Asml Holding Nv Folded optical encoder and applications for same.
CN103293665B (zh) 2008-02-15 2016-07-06 卡尔蔡司Smt有限责任公司 微光刻的投射曝光设备使用的分面镜
DE102012210071A1 (de) * 2012-06-15 2013-12-19 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage sowie Verfahren zum Steuern einer Projektionsbelichtungsanlage
DE102013204443A1 (de) * 2013-03-14 2014-10-02 Carl Zeiss Smt Gmbh Optische Baugruppe zur Lichtleitwerterhöhung
DE102013211830A1 (de) 2013-06-21 2014-06-12 Carl Zeiss Smt Gmbh EUV-Lithographieanlage mit Freie-Elektronen-Laser-Einheit
DE102013223935A1 (de) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Belichtungslithographie

Also Published As

Publication number Publication date
WO2017005912A3 (de) 2017-03-02
WO2017005912A2 (de) 2017-01-12
DE102015212878A1 (de) 2017-01-12
KR102700274B1 (ko) 2024-08-29
CN107924143A (zh) 2018-04-17
KR20180028487A (ko) 2018-03-16

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