CN107910419A - A kind of light emitting diode and preparation method thereof - Google Patents
A kind of light emitting diode and preparation method thereof Download PDFInfo
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- CN107910419A CN107910419A CN201711103855.7A CN201711103855A CN107910419A CN 107910419 A CN107910419 A CN 107910419A CN 201711103855 A CN201711103855 A CN 201711103855A CN 107910419 A CN107910419 A CN 107910419A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 110
- 229920002120 photoresistant polymer Polymers 0.000 claims description 65
- 238000005530 etching Methods 0.000 claims description 38
- 238000000926 separation method Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 230000003628 erosive effect Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 209
- 238000004020 luminiscence type Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- Electroluminescent Light Sources (AREA)
Abstract
This application discloses a kind of light emitting diode and preparation method thereof, wherein, the step that sets on substrate is passed through by light emitting diode prepared by the light-emitting diodes tube preparation method, adjacent Second-Type conductive layer on the first type conductive layer and first direction of the epitaxial structure formed on adjacent step is at least partly contacted, so as to realize the electrical connection of Second-Type conductive layer adjacent on the first type conductive layer and first direction of the epitaxial structure on adjacent step by the transparency conducting layer being subsequently formed, may not need from series connection at least two epitaxial structures realized through the above way is realized by way of building bridged electrodes, avoid bridged electrodes it is possible that risk of breakage, and simplify the preparation difficulty of the light emitting diode with the series connection of multiple epitaxial structures.
Description
Technical field
This application involves technical field of semiconductors, more specifically to a kind of light emitting diode and preparation method thereof.
Background technology
Light emitting diode (Light Emitting Diode, LED), also referred to as electroluminescent diode, are the core of LED light
Heart component.With the fast development of light emitting diode, the application field of light emitting diode is continuously increased, the structure of light emitting diode
Also improve and perfect is constantly obtained.
The advantages of light emitting diode of high-voltage chip structure can effectively reduce the cost of application end and energy consumption with it,
As a popular developing direction of light emitting diode now.In the prior art, using the light-emitting diodes of high-voltage chip structure
Pipe generally use chip manufacturing process realizes the series connection of several luminescence units on horizontal plane by way of electrode bridge joint.But
In this configuration, electrode realizes that the bridged electrodes of several luminescence units series connection need to lead on the first type of two luminescence units
Together with electric structure is bridged with Second-Type conductive structure, and both conductive structures make not on same extension horizontal plane
Obtain not only needs to make multiple separation layers when preparing bridged electrodes, but also also needs to solve the right-angle side that different height difference band comes
Bridge joint problem, this not only make it that the preparation process of bridged electrodes is complicated, but also bridged electrodes can be caused to hold in some bending places
The situation for easily occurring being broken occurs.
The content of the invention
In order to solve the above technical problems, the present invention provides a kind of light emitting diode and preparation method thereof, provided with realizing
A kind of need not be the purpose that luminescence unit can be achieved from the light emitting diode connected and preparation method thereof by bridged electrodes.
To realize above-mentioned technical purpose, an embodiment of the present invention provides following technical solution：
A kind of preparation method of light emitting diode, including：
Substrate is provided；
At least level-one step, the height of every grade of step is formed in the substrate first surface to be sequentially reduced in the first direction；
Epitaxial structure is formed on every grade of step, the epitaxial structure includes the buffering stacked gradually positioned at ledge surface
Layer, the first type conductive layer, active area and Second-Type conductive layer, the side of the cushion of the epitaxial structure on every grade of step with the
The side of the Second-Type conductive layer of epitaxial structure on one direction on adjacent step at least partly contacts；
Epitaxial structure on every grade of step is performed etching, with away from the minimum ledge surface shape of substrate second surface distance
Into electrode platform and the cushion of the epitaxial structure on other steps is set to be exposed towards first direction side part；
Epitaxial structure on every grade of step forms separation layer towards first direction side, the separation layer covering described the
The partial sidewall surface of the sidewall surfaces and the first type conductive layer of two type conductive layers and active area；
The Second-Type conductive layer surface of epitaxial structure and exposed buffer-layer surface form transparent lead on every grade of step
Electric layer, so that the first type conductive layer of epitaxial structure on every grade of step and the epitaxy junction on adjacent step in a first direction
The Second-Type conductive layer of structure is electrically connected by the transparency conducting layer；
First electrode is formed away from one side surface of substrate in the electrode platform, and away from substrate second surface distance
Maximum layer at transparent layer forms second electrode.
Optionally, it is described to include in substrate surface formation at least level-one step：
The substrate is performed etching, to form at least level-one step over the substrate.
Optionally, it is described to include in substrate surface formation at least level-one step：
Step cushion is formed in the substrate surface；
Step material layer is formed in the step buffer-layer surface；
The step material layer is performed etching, to form at least level-one step.
Optionally, the epitaxial structure on every grade of step forms separation layer towards first direction side and includes：
The Second-Type conductive layer surface of epitaxial structure on every grade of step forms one layer of first photoresist layer；
The expose portion surface of the cushion of epitaxial structure on every grade of step forms one layer of second photoresist layer, described
The thickness of second photoresist layer is less than the thickness of first photoresist layer；
The sidewall surfaces growth separation layer of epitaxial structure on every grade of step so that the separation layer be completely covered it is described
Second-Type conductive layer and active area are towards the sidewall surfaces of first direction, and part covers the first type conductive layer towards first
The sidewall surfaces in direction；
Remove first photoresist layer and Second-Type photoresist layer.
Optionally, the epitaxial structure on every grade of step performs etching, with minimum away from substrate second surface distance
Ledge surface formed and electrode platform and make the cushion of the epitaxial structure on other steps sudden and violent towards first direction side part
Expose including：
The Second-Type conductive layer surface of epitaxial structure on every grade of step forms one layer of sacrifice layer；
Sacrifice layer on away from the minimum step of substrate second surface distance is removed；
The 3rd photoetching is formed in the sacrificial layer surface and the second surface with the step of substrate distance minimum
Glue-line；
By erosion removal sacrifice layer, while remove the 3rd photoresist layer of sacrificial layer surface；
In the Second-Type conductive layer surface and the 3rd photoresist layer surface being exposed while the 4th photoresist layer is formed,
The colloidality of 3rd photoresist layer and the 4th photoresist layer is opposite；
Mask plate is set on the 4th photoresist layer surface, and is mask to the 4th photoresist using the mask plate
Layer is exposed and develops, partly to remove fourth photoresist layer of the every grade of step towards first direction；
Using remaining 4th photoresist layer as mask, using inductively coupled plasma etching technique on every grade of step
Epitaxial structure performs etching, to form electrode platform away from the minimum ledge surface of substrate second surface distance and make other steps
On the cushion of epitaxial structure be exposed towards first direction side part.
Optionally, the etching technics used to the epitaxial structure is inductively coupled plasma etching technique.
A kind of light emitting diode, including：
There is at least level-one step, the height of every grade of step to subtract successively in the first direction for substrate, the substrate first surface
It is small；
Epitaxial structure on every grade of step, the epitaxial structure include the buffering stacked gradually positioned at ledge surface
Layer, the first type conductive layer, active area and Second-Type conductive layer；
The sidewall surfaces of epitaxial structure towards first direction side on every grade of step are provided with separation layer, the separation layer
Cover the sidewall surfaces of the Second-Type conductive layer and active area and the partial sidewall surface of the first type conductive layer, distance
The minimum ledge surface of the substrate second surface distance has electrode platform；
The cushion of the Second-Type conductive layer surface and the epitaxial structure on every grade of step is covered towards first direction one
The transparency conducting layer of end surfaces, the first type conductive layer of the epitaxial structure on every grade of step and adjacent step in a first direction
On the Second-Type conductive layer of epitaxial structure be electrically connected by the transparency conducting layer；
Deviate from the first electrode of one side surface of substrate positioned at the electrode platform；
Positioned at the second electrode away from the maximum layer at transparent layer of substrate second surface distance.
Optionally, the first surface of the substrate has the step that at least level-one is formed by substrate through over etching.
Optionally, at least level-one step of the substrate surface includes：
Step cushion；
Deviate from the step material layer of the substrate first surface side positioned at the step cushion；
The step material layer has the step that at least level-one is formed by step material layer through over etching.
It can be seen from the above technical proposal that an embodiment of the present invention provides a kind of light emitting diode and preparation method thereof,
Wherein, the preparation method of the light emitting diode in substrate surface by forming at least level-one step, and the shape on each step
Into the mode of epitaxial structure so that phase on the first type conductive layer and first direction of two adjacent epitaxial structures (luminescence unit)
Adjacent Second-Type conductive layer at least partly contacts, and by the formation of follow-up etching and separation layer and transparency conducting layer,
The electrical connection of Second-Type conductive layer adjacent on the first type conductive layer and first direction of adjacent epitaxial structure is realized, so that
Realize connecting certainly in LED internal epitaxial structure.The light emitting diode formed by the above method need not pass through bridge
Receiving electrode realizes the series connection of epitaxial structure, avoid bridged electrodes it is possible that risk of breakage, and simplify with more
The preparation difficulty of the light emitting diode of a epitaxial structure series connection.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow diagram of the preparation method for light emitting diode that one embodiment of the application provides；
Fig. 2-Fig. 9 is the preparation flow schematic diagram of the preparation method of the light emitting diode shown in Fig. 1；
Figure 10 is that a kind of flow of the preparation method for light emitting diode that another one embodiment of the application provides is shown
It is intended to；
Figure 11 is that a kind of flow of the preparation method for light emitting diode that another one embodiment of the application provides is shown
It is intended to；
Figure 12-Figure 14 is a kind of preparation flow schematic diagram for step that one embodiment of the application provides；
Figure 15 is that a kind of flow of the preparation method for light emitting diode that another one embodiment of the application provides is shown
It is intended to.
Figure 16-Figure 18 is a kind of preparation flow schematic diagram for separation layer that one embodiment of the application provides；
Figure 19 is a kind of flow signal of the preparation method for light emitting diode that the specific embodiment of the application provides
Figure；
Figure 20-Figure 25 is a kind of preparation flow schematic diagram for electrode platform that one embodiment of the application provides.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment, belongs to the scope of protection of the invention.
The embodiment of the present application provides a kind of preparation method of light emitting diode, as shown in Figure 1, including：
S101：Substrate is provided；
With reference to figure 2, Fig. 2 is the cross-sectional view of substrate.Label 10 in Fig. 2 represents the substrate.
S102：At least level-one step is formed in the substrate first surface, and the height of every grade of step is in the first direction successively
Reduce；
With reference to figure 3, Fig. 3 is the cross-sectional view of the substrate and its surface texture after step S102.In Fig. 3
Label 20 represents the step.
It should be noted that the first direction is parallel with the substrate direction, in figure 3, first direction is arrow institute
Show direction, of course, in the other embodiment of the application, the first direction can also be the opposite direction shown in arrow.This
Application does not limit this, specifically depending on actual conditions.
In addition, the numbers of steps that the substrate first surface can possess can be 2,3,4,5 etc..Specifically regard described shine
Depending on the number of the epitaxial structure of series connection needed for diode.
S103：Epitaxial structure is formed on every grade of step, the epitaxial structure includes what is stacked gradually positioned at ledge surface
Cushion, the first type conductive layer, active area and Second-Type conductive layer, the side of the cushion of the epitaxial structure on every grade of step with
The side of the Second-Type conductive layer of the epitaxial structure on adjacent step at least partly contacts in a first direction；
With reference to figure 4, Fig. 4 is the cross-sectional view of the substrate and its surface texture after step S103.In Fig. 4
Label 30 represents the epitaxial structure, and 31 represent cushions, and 32 represent the first type conductive layers, and 33 represent active areas, and 34 represent the
Two type conductive layers.
It should be noted that the cushion, the first type conductive layer, active area and Second-Type conductive layer are the epitaxy junction
The basic Component units (alternatively referred to as luminescence unit) of structure, on this basis, the epitaxial structure can also include other to LED
The performance of chip has the functional structure layer of optimization function.
The formation process of the first type conductive layer, active area and Second-Type conductive layer includes but not limited to physical vapor and sinks
Long-pending (Physical Vapor Deposition, PVD), chemical vapor deposition (Chemical Vapor Deposition,
CVD), epitaxial growth (Epitaxy Growth Technology) and atom sediment (Atomic Layer Deposition,
ALD).Wherein, physical vapour deposition (PVD) includes but not limited to hot evaporation and magnetron sputtering.The application does not limit this, specifically
Depending on actual conditions.
S104：Epitaxial structure on every grade of step is performed etching, with away from the minimum step of substrate second surface distance
Surface forms electrode platform and the cushion of the epitaxial structure on other steps is exposed towards first direction side part；
With reference to figure 5, Fig. 5 is the cross-sectional view of the substrate and its surface texture after step S104.
With reference to figure 6, Fig. 6 is the top view of structure shown in Fig. 5.Label 11 in Fig. 6 represents the electrode platform, i.e., first
The making region of electrode.
S105：Epitaxial structure on every grade of step forms separation layer, the separation layer covering towards first direction side
The sidewall surfaces of the Second-Type conductive layer and active area and the partial sidewall surface of the first type conductive layer；
With reference to figure 7, Fig. 7 is the cross-sectional view of the substrate and its surface texture after step S105.In the step
The purpose that separation layer is set in rapid is that the covering part of separation layer is protected in follow-up technique, follow-up also for avoiding
The situation that the transparency conducting layer of formation is connected and turns on Second-Type conductive layer and active area by mistake occurs.40 table of label in Fig. 7
Show the separation layer.
S106：The Second-Type conductive layer surface of epitaxial structure and exposed buffer-layer surface are formed on every grade of step
Bright conductive layer so that the first type conductive layer of epitaxial structure on every grade of step with it is outer on adjacent step in a first direction
The Second-Type conductive layer for prolonging structure is electrically connected by the transparency conducting layer；
With reference to figure 8, Fig. 8 is the cross-sectional view of the substrate and its surface texture after step S106.In Fig. 8
Label 50 represents the transparency conducting layer.
S107：First electrode is formed away from one side surface of substrate in the electrode platform, and away from the second table of substrate
Identity distance forms second electrode from maximum layer at transparent layer.
With reference to figure 9, Fig. 9 is the cross-sectional view of the substrate and its surface texture after step S107.Need
Bright, the second surface of the substrate is away from the surface of the first surface side, apart from second surface distance minimum
Transparency conducting layer is located at the end region of substrate first direction；The transparency conducting layer maximum apart from substrate second surface distance is located at
The initiation region of substrate first direction.
Label 60 in Fig. 9 represents the second electrode, and 70 represent the first electrode.
The step that sets on substrate is passed through by light emitting diode prepared by the above method so that formed on adjacent step
Epitaxial structure the first type conductive layer and first direction on adjacent Second-Type conductive layer can at least partly contact, so as to
To be realized by the transparency conducting layer being subsequently formed on the first type conductive layer and first direction of the epitaxial structure on adjacent step
The electrical connection of adjacent Second-Type conductive layer, at least two epitaxial structures realized through the above way may not need from series connection
Realized by way of building bridged electrodes, avoid bridged electrodes it is possible that risk of breakage, and simplify and have
The preparation difficulty of the light emitting diode of multiple epitaxial structure series connection.
In addition, the side that epitaxial structure prepared by the above method passes through the epitaxial structure side wall formation separation layer in each step
Formula protects separation layer institute covering part, it also avoid the transparency conducting layer covering epitaxial layer side wall being subsequently formed so that
The Second-Type conductive layer of single extension ray structure, active area, the first type conductive layer connect and turn on and form short circuit alone.
On the basis of above-described embodiment, a kind of formed on substrate at least is provided in one embodiment of the application
Two kinds of feasible patterns of level-one step：
It is described to include in substrate surface formation at least level-one step with reference to figure 10：
S1021：The substrate is performed etching, to form at least level-one step over the substrate.
It should be noted that directly substrate is performed etching to be formed at least level-one step way process it is relatively simple, but
It is when step number is more, it is desirable to provide thicker substrate meets the formation of multi-stage stairs.
It is described to include in substrate surface formation at least level-one step with reference to figure 11：
S1022：Step cushion is formed in the substrate surface；
With reference to figure 12, Figure 12 is the cross-sectional view of the substrate and its surface texture after step S1022, Figure 12
In label 21 represent the step cushion.
S1023：Step material layer is formed in the step buffer-layer surface；
With reference to figure 13, Figure 13 is the cross-sectional view of the substrate and its surface texture after step S1023.Figure 13
In label 22 represent the step material layer.
S1024：The step material layer is performed etching, to form at least level-one step.
With reference to figure 14, Figure 14 is the cross-sectional view of the substrate and its surface texture after step S1024.
In the present embodiment, volume first is passed through without being performed etching to substrate during forming at least level-one and adjusting
External bucket step cushion and step material layer, the mode then performed etching to step material layer form at least level-one step,
During this formation at least level-one step, without proposing thickness requirement to substrate.The application is to forming at least level-one platform
The specific method of rank does not limit, specifically depending on actual conditions.
It is described to every grade of step with reference to figure 15 in another embodiment of the application on the basis of above-described embodiment
On epitaxial structure perform etching, to form electrode platform away from the minimum ledge surface of substrate second surface distance and make other
The cushion of epitaxial structure on step towards first direction side part be exposed including：
S1051：The Second-Type conductive layer surface of epitaxial structure on every grade of step forms one layer of first photoresist layer；
With reference to figure 16, Figure 16 is the cross-sectional view of the substrate and its surface texture after step S1051, Figure 16
In label PR1 represent first photoresist layer.
S1052：The expose portion surface of the cushion of epitaxial structure on every grade of step forms one layer of second photoresist
Layer, the thickness of second photoresist layer are less than the thickness of first photoresist layer；
With reference to figure 17, Figure 17 is the cross-sectional view of the substrate and its surface texture after step S1052.Figure 17
In label PR2 represent second photoresist layer.
S1053：The sidewall surfaces growth separation layer of epitaxial structure on every grade of step, so that the separation layer covers completely
The sidewall surfaces of the Second-Type conductive layer and active area towards first direction are covered, and part covers the first type conductive layer court
To the sidewall surfaces of first direction；
With reference to figure 18, Figure 18 is the cross-sectional view of the substrate and its surface texture after step S1053.
S1054：Remove first photoresist layer and Second-Type photoresist layer.
With reference to figure 7, Fig. 7 is the cross-sectional view of the substrate and its surface texture after step S1054.
Optionally, the etching technics used to the epitaxial structure is inductively coupled plasma etching (Inductive
Coupled Plasma Emission Spectrometer), ICP) technique.
It is as shown in figure 19, described to every grade in the specific embodiment of the application on the basis of above-described embodiment
Epitaxial structure on step performs etching, to form electrode platform away from the minimum ledge surface of substrate second surface distance and make
The cushion of epitaxial structure on other steps towards first direction side part be exposed including：
S1041：The Second-Type conductive layer surface of epitaxial structure on every grade of step forms one layer of sacrifice layer；
The cross-sectional view of substrate and its surface texture after step S1041 is with reference to figure 20；Mark in Figure 20
Number SA represents the sacrifice layer.
S1042：Sacrifice layer on away from the minimum step of substrate second surface distance is removed；
The cross-sectional view of substrate and its surface texture after step S1042 is with reference to figure 21.
S1043：The sacrificial layer surface and it is described with the step of substrate distance minimum on second surface formation the
Three photoresist layers；
The cross-sectional view of substrate and its surface texture after step S1043 is with reference to figure 22；Mark in Figure 22
Number PR3 represents the 3rd photoresist layer.
S1044：By erosion removal sacrifice layer, while remove the 3rd photoresist layer of sacrificial layer surface；
The cross-sectional view of substrate and its surface texture after step S1044 is with reference to figure 23.
S1045：In the Second-Type conductive layer surface and the 3rd photoresist layer surface being exposed while form the 4th light
Photoresist layer, the colloidality of the 3rd photoresist layer and the 4th photoresist layer are opposite；
The cross-sectional view of substrate and its surface texture after step S1045 is with reference to figure 24；Mark in Figure 24
Number PR4 represents the 4th photoresist layer.
S1046：Mask plate is set on the 4th photoresist layer surface, and is mask to the described 4th using the mask plate
Photoresist layer is exposed and develops, partly to remove fourth photoresist layer of the every grade of step towards first direction.
The cross-sectional view of substrate and its surface texture after step S1046 is with reference to figure 25.
S1047：Using remaining 4th photoresist layer as mask, using inductively coupled plasma etching technique to every grade of platform
Epitaxial structure on rank performs etching, to form electrode platform away from the minimum ledge surface of substrate second surface distance and make it
The cushion of epitaxial structure on his step is exposed towards first direction side part.
The cross-sectional view of substrate and its surface texture after step S1047 is with reference to figure 5.
It should be noted that purpose existing for the sacrifice layer is formed in removal step S1042 positioned at except away from institute
While stating the sacrifice layer on the minimum step of substrate second surface distance, the 3rd photoresist layer on its surface is removed, is only retained
Away from the 3rd photoresist layer on the minimum step of substrate second surface distance；Optionally, the sacrifice layer can be dioxy
The conventional dielectric layers such as SiClx, wet etching can be used by removing the method for the sacrifice layer, for example with BOE solution to titanium dioxide
Silicon layer is dissolved.
In addition, the colloidality of the 3rd photoresist layer and the 4th photoresist layer in step S1045 on the contrary, so that only go
Except every grade of step is towards the 4th photoresist layer of first direction, and it is retained in away from the minimum step of substrate second surface distance
On the 3rd photoresist layer.For example, the 3rd photoresist layer can be positive photoresist layer, the 4th photoresist layer can be with
For negative photo glue-line；Can also be that the 3rd photoresist layer is negative photo glue-line, the 4th photoresist layer is positivity
Photoresist layer；When the colloidality of the 4th photoresist layer is different, the requirement to the shape of the mask plate of step S1045 is not yet
Together, the application does not limit this, specifically depending on actual conditions.
In step S1046, due to also remaining with the 3rd photoresist layer above the electrode platform, using
When inductively coupled plasma etching technique (ICP) performs etching the epitaxial structure on every grade of step, above electrode platform
Etching depth can be less than the etching depth of the epitaxial structure on other steps, so that the first type conductive layer of member-retaining portion is as institute
State electrode platform.
Correspondingly, the embodiment of the present application additionally provides a kind of light emitting diode, with reference to figure 9, the light emitting diode includes：
Substrate 10,10 first surface of substrate have an at least level-one step 20, and the height of every grade of step 20 is along first party
To being sequentially reduced；
Epitaxial structure 30 on every grade of step 20, the epitaxial structure 30 include stacking gradually positioned at 20 surface of step
Cushion 31, the first type conductive layer 32, active area 33 and Second-Type conductive layer 34；
The sidewall surfaces of epitaxial structure 30 towards first direction side on every grade of step 20 are provided with separation layer 40, described
Separation layer 40 covers the sidewall surfaces of the Second-Type conductive layer 34 and active area 33 and the portion of the first type conductive layer 32
Divide sidewall surfaces；
The cushion 31 of 34 surface of Second-Type conductive layer and the epitaxial structure 30 on every grade of step 20 is covered towards
The transparency conducting layer 50 of one direction end surface, the first type conductive layer 32 of the epitaxial structure 30 on every grade of step 20 with first
The Second-Type conductive layer 34 of epitaxial structure 30 on direction on adjacent step 20 is electrically connected by the transparency conducting layer 50；
Positioned at the first electricity away from the minimum 32 electrode fabrication platform surface of the first type conductive layer of 10 second surface of substrate distance
Pole 70；
Positioned at the second electrode 60 away from maximum 50 surface of transparency conducting layer of 10 second surface of substrate distance.
The light emitting diode passes through the step 20 that sets over the substrate 10 so that the epitaxy junction formed on adjacent step 20
Adjacent Second-Type conductive layer 34 can be contacted at least partly on the first type conductive layer 32 and first direction of structure 30, so as to
The first type conductive layer 32 and first of the epitaxial structure 30 on adjacent step 20 is realized by the transparency conducting layer 50 being subsequently formed
The electrical connection of adjacent Second-Type conductive layer 34 on direction, at least two epitaxial structures 30 realized through the above way are gone here and there certainly
Connection may not need and be realized by way of building bridged electrodes, avoid bridged electrodes it is possible that risk of breakage, and
Simplify the preparation difficulty of the light emitting diode with the series connection of multiple epitaxial structures 30.
In addition, the epitaxial structure 30 of the light emitting diode by each step 20 30 side wall of epitaxial structure formed every
The mode of absciss layer 40 protects 40 covering parts of separation layer, and the transparency conducting layer 50 for avoiding being subsequently formed covers epitaxial layer
Side wall so that alone the Second-Type conductive layer 34 of single extension ray structure, active area 33, the first type conductive layer 32 connect and
Conducting forms short circuit.
Optionally, the first surface of the substrate 10 has the step 20 that at least level-one is formed by substrate 10 through over etching.
Optionally, at least level-one step 20 on 10 surface of substrate includes：
20 cushion 31 of step；
Deviate from 20 material layer of step of the 10 first surface side of substrate positioned at 20 cushion 31 of step；
20 material layer of step has the step 20 that at least level-one is formed by 20 material layer of step through over etching.
The specific forming process of above two step 20 refers to the preparation method above for light emitting diode.
In conclusion the embodiment of the present application provides a kind of light emitting diode and preparation method thereof, wherein, pass through the hair
Light emitting diode prepared by optical diode preparation method passes through the step that sets on substrate so that what is formed on adjacent step is outer
Prolonging Second-Type conductive layer adjacent on the first type conductive layer and first direction of structure can at least partly contact, so as to logical
Cross the transparency conducting layer being subsequently formed realize it is adjacent on the first type conductive layer and first direction of the epitaxial structure on adjacent step
Second-Type conductive layer electrical connection, at least two epitaxial structures realized through the above way may not need and passes through from series connection
The mode for building bridged electrodes realizes, avoid bridged electrodes it is possible that risk of breakage, and simplify with multiple
The preparation difficulty of the light emitting diode of epitaxial structure series connection.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (9)
- A kind of 1. preparation method of light emitting diode, it is characterised in that including：Substrate is provided；At least level-one step, the height of every grade of step is formed in the substrate first surface to be sequentially reduced in the first direction；Form epitaxial structure on every grade of step, cushion that the epitaxial structure includes stacking gradually positioned at ledge surface, the One type conductive layer, active area and Second-Type conductive layer, the side of the cushion of the epitaxial structure on every grade of step with first party The side of the Second-Type conductive layer of the epitaxial structure on adjacent step at least partly contacts upwards；Epitaxial structure on every grade of step is performed etching, to form electricity away from the minimum ledge surface of substrate second surface distance Polar Patform simultaneously makes the cushion of the epitaxial structure on other steps be exposed towards first direction side part；Epitaxial structure on every grade of step forms separation layer towards first direction side, and the separation layer covers the Second-Type The partial sidewall surface of the sidewall surfaces and the first type conductive layer of conductive layer and active area；The Second-Type conductive layer surface of epitaxial structure and exposed buffer-layer surface form transparency conducting layer on every grade of step, So that the first type conductive layer of epitaxial structure on every grade of step and the epitaxial structure on adjacent step in a first direction Second-Type conductive layer is electrically connected by the transparency conducting layer；First electrode is formed away from one side surface of substrate in the electrode platform, and maximum away from substrate second surface distance Layer at transparent layer formed second electrode.
- 2. according to the method described in claim 1, it is characterized in that, described form at least level-one step bag in the substrate surface Include：The substrate is performed etching, to form at least level-one step over the substrate.
- 3. according to the method described in claim 1, it is characterized in that, described form at least level-one step bag in the substrate surface Include：Step cushion is formed in the substrate surface；Step material layer is formed in the step buffer-layer surface；The step material layer is performed etching, to form at least level-one step.
- 4. according to the method described in claim 1, it is characterized in that, the epitaxial structure on every grade of step is towards first party Forming separation layer to side includes：The Second-Type conductive layer surface of epitaxial structure on every grade of step forms one layer of first photoresist layer；One layer of second photoresist layer of expose portion surface formation of the cushion of epitaxial structure on every grade of step, described second The thickness of photoresist layer is less than the thickness of first photoresist layer；The sidewall surfaces growth separation layer of epitaxial structure on every grade of step, so that the separation layer is completely covered described second Type conductive layer and active area are towards the sidewall surfaces of first direction, and part covers the first type conductive layer towards first direction Sidewall surfaces；Remove first photoresist layer and Second-Type photoresist layer.
- 5. according to the method described in claim 1, it is characterized in that, the epitaxial structure on every grade of step performs etching, To form electrode platform away from the minimum ledge surface of substrate second surface distance and make the slow of the epitaxial structure on other steps Rush layer towards first direction side part be exposed including：The Second-Type conductive layer surface of epitaxial structure on every grade of step forms one layer of sacrifice layer；Sacrifice layer on away from the minimum step of substrate second surface distance is removed；The 3rd photoresist layer is formed in the sacrificial layer surface and the second surface with the step of substrate distance minimum；By erosion removal sacrifice layer, while remove the 3rd photoresist layer of sacrificial layer surface；In the Second-Type conductive layer surface and the 3rd photoresist layer surface being exposed while the 4th photoresist layer is formed, it is described The colloidality of 3rd photoresist layer and the 4th photoresist layer is opposite；The 4th photoresist layer surface set mask plate, and using the mask plate as mask to the 4th photoresist layer into Row is exposed and developed, partly to remove fourth photoresist layer of the every grade of step towards first direction；Using remaining 4th photoresist layer as mask, using inductively coupled plasma etching technique to the extension on every grade of step Structure performs etching, to form electrode platform away from the minimum ledge surface of substrate second surface distance and make on other steps The cushion of epitaxial structure is exposed towards first direction side part.
- 6. according to the method described in claim 1, it is characterized in that, the etching technics used to the epitaxial structure is inductance coupling Close plasma etch process.
- A kind of 7. light emitting diode, it is characterised in that including：There is at least level-one step, the height of every grade of step to be sequentially reduced in the first direction for substrate, the substrate first surface；Epitaxial structure on every grade of step, cushion that the epitaxial structure includes stacking gradually positioned at ledge surface, the One type conductive layer, active area and Second-Type conductive layer；The sidewall surfaces of epitaxial structure towards first direction side on every grade of step are provided with separation layer, the separation layer covering The sidewall surfaces of the Second-Type conductive layer and active area and the partial sidewall surface of the first type conductive layer, described in The minimum ledge surface of substrate second surface distance has electrode platform；The cushion of the Second-Type conductive layer surface and the epitaxial structure on every grade of step is covered towards first direction one end table The transparency conducting layer in face, the first type conductive layer of the epitaxial structure on every grade of step with adjacent step in a first direction The Second-Type conductive layer of epitaxial structure is electrically connected by the transparency conducting layer；Deviate from the first electrode of one side surface of substrate positioned at the electrode platform；Positioned at the second electrode away from the maximum layer at transparent layer of substrate second surface distance.
- 8. light emitting diode according to claim 7, it is characterised in that the first surface of the substrate has at least level-one The step formed by substrate through over etching.
- 9. light emitting diode according to claim 7, it is characterised in that at least level-one step bag of the substrate surface Include：Step cushion；Deviate from the step material layer of the substrate first surface side positioned at the step cushion；The step material layer has the step that at least level-one is formed by step material layer through over etching.
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| CN102446948A (en) * | 2010-10-12 | 2012-05-09 | 晶元光电股份有限公司 | Light emitting element |
| US20130026448A1 (en) * | 2010-07-28 | 2013-01-31 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (led) die having peripheral electrode frame and method of fabrication |
| CN102938436A (en) * | 2012-11-20 | 2013-02-20 | 无锡华润华晶微电子有限公司 | Isolation filling manufacture method in GaN-based high voltage light-emitting diode (LED) manufacture process |
| CN104701307A (en) * | 2014-12-06 | 2015-06-10 | 广州南科集成电子有限公司 | Planar high-voltage serial LED (light-emitting diode) integrated chip and manufacturing method |
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| US20130026448A1 (en) * | 2010-07-28 | 2013-01-31 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (led) die having peripheral electrode frame and method of fabrication |
| CN102446948A (en) * | 2010-10-12 | 2012-05-09 | 晶元光电股份有限公司 | Light emitting element |
| CN102938436A (en) * | 2012-11-20 | 2013-02-20 | 无锡华润华晶微电子有限公司 | Isolation filling manufacture method in GaN-based high voltage light-emitting diode (LED) manufacture process |
| CN104701307A (en) * | 2014-12-06 | 2015-06-10 | 广州南科集成电子有限公司 | Planar high-voltage serial LED (light-emitting diode) integrated chip and manufacturing method |
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