CN107910419B - A kind of light emitting diode and preparation method thereof - Google Patents
A kind of light emitting diode and preparation method thereof Download PDFInfo
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- CN107910419B CN107910419B CN201711103855.7A CN201711103855A CN107910419B CN 107910419 B CN107910419 B CN 107910419B CN 201711103855 A CN201711103855 A CN 201711103855A CN 107910419 B CN107910419 B CN 107910419B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 110
- 229920002120 photoresistant polymer Polymers 0.000 claims description 67
- 238000005530 etching Methods 0.000 claims description 37
- 238000000926 separation method Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 230000003628 erosive effect Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 236
- 238000010586 diagram Methods 0.000 description 26
- 238000004020 luminiscence type Methods 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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Abstract
This application discloses a kind of light emitting diodes and preparation method thereof, wherein, the light emitting diode prepared by the light-emitting diodes tube preparation method passes through the step being arranged on substrate, adjacent second type conductive layer on the first type conductive layer and first direction of the epitaxial structure formed on adjacent step is at least partly contacted, so as to realize the electrical connection of second type conductive layer adjacent on the first type conductive layer and first direction of the epitaxial structure on adjacent step by the transparency conducting layer being subsequently formed, may not need from series connection at least two epitaxial structures realized through the above way is realized by way of building bridged electrodes, avoid bridged electrodes it is possible that risk of breakage, and simplify the preparation difficulty with the concatenated light emitting diode of multiple epitaxial structures.
Description
Technical field
This application involves technical field of semiconductors, more specifically to a kind of light emitting diode and preparation method thereof.
Background technique
Light emitting diode (Light Emitting Diode, LED), also referred to as electroluminescent diode, are the core of LED light
Heart component.With the fast development of light emitting diode, the application field of light emitting diode is continuously increased, the structure of light emitting diode
Also improve and perfect is constantly obtained.
The light emitting diode of high-voltage chip structure can effectively reduce the advantages of cost and energy consumption of application end with it,
A popular developing direction as light emitting diode now.In the prior art, using the light-emitting diodes of high-voltage chip structure
Pipe generallys use the series connection that chip manufacturing process realizes several luminescence units on horizontal plane in such a way that electrode bridges.But
In this configuration, electrode realizes that the concatenated bridged electrodes needs of several luminescence units lead the first type of two luminescence units
Together with electric structure is bridged with second type conductive structure, and both conductive structures make not on the same extension horizontal plane
It obtains and not only needs to make multiple separation layers when preparing bridged electrodes, but also need to solve different height difference bring right-angle side
Bridge joint problem, this not only makes the preparation process of bridged electrodes complicated, but also bridged electrodes can be made to hold in some bending places
The case where being easily broken occurs.
Summary of the invention
In order to solve the above technical problems, being provided the present invention provides a kind of light emitting diode and preparation method thereof with realizing
It is a kind of that purpose of the luminescence unit from concatenated light emitting diode and preparation method thereof can be realized without dependence bridged electrodes.
To realize the above-mentioned technical purpose, the embodiment of the invention provides following technical solutions:
A kind of preparation method of light emitting diode, comprising:
Substrate is provided；
At least one level step is formed in the substrate first surface, the height of every grade of step is sequentially reduced along first direction；
Epitaxial structure is formed on every grade of step, the epitaxial structure includes the buffering stacked gradually positioned at ledge surface
Layer, the first type conductive layer, active area and second type conductive layer, the side of the buffer layer of the epitaxial structure on every grade of step with the
The side of the second type conductive layer of epitaxial structure on one direction on adjacent step at least partly contacts；
Epitaxial structure on every grade of step is performed etching, with away from substrate second surface apart from the smallest ledge surface shape
At electrode platform and the buffer layer of the epitaxial structure on other steps is exposed towards one side section of first direction；
Epitaxial structure on every grade of step forms separation layer towards first direction side, the separation layer covering described the
The partial sidewall surface of the sidewall surfaces and the first type conductive layer of two type conductive layers and active area；
The second type conductive layer surface of epitaxial structure and exposed buffer-layer surface form transparent lead on every grade of step
Electric layer, so that the epitaxy junction on the first type conductive layer of the epitaxial structure on every grade of step and step adjacent in a first direction
The second type conductive layer of structure is electrically connected by the transparency conducting layer；
First electrode is formed away from the one side of substrate surface in the electrode platform, and away from substrate second surface distance
Maximum layer at transparent layer forms second electrode.
Optionally, described to include: in substrate surface formation at least one level step
The substrate is performed etching, to form at least one level step over the substrate.
Optionally, described to include: in substrate surface formation at least one level step
Step buffer layer is formed in the substrate surface；
Step material layer is formed in the step buffer-layer surface；
The step material layer is performed etching, to form at least one level step.
Optionally, the epitaxial structure on every grade of step includes: towards first direction side formation separation layer
The second type conductive layer surface of epitaxial structure on every grade of step forms one layer of first photoresist layer；
The expose portion surface of the buffer layer of epitaxial structure on every grade of step forms one layer of second photoresist layer, described
The thickness of second photoresist layer is less than the thickness of first photoresist layer；
The sidewall surfaces of epitaxial structure on every grade of step grow separation layer so that the separation layer be completely covered it is described
Second type conductive layer and active area are towards the sidewall surfaces of first direction, and part covers the first type conductive layer towards first
The sidewall surfaces in direction；
Remove first photoresist layer and second type photoresist layer.
Optionally, the epitaxial structure on every grade of step performs etching, minimum away from substrate second surface distance
Ledge surface form electrode platform and keep the buffer layer of epitaxial structure on other steps sudden and violent towards one side section of first direction
Expose and includes:
The second type conductive layer surface of epitaxial structure on every grade of step forms one layer of sacrificial layer；
The sacrificial layer removal away from the substrate second surface on the smallest step will be located at；
Third photoetching is formed in the sacrificial layer surface and with the second surface on the smallest step of the substrate distance
Glue-line；
By erosion removal sacrificial layer, while removing the third photoresist layer of sacrificial layer surface；
It is formed simultaneously the 4th photoresist layer in the second type conductive layer surface and third photoresist layer surface being exposed,
The colloidality of the third photoresist layer and the 4th photoresist layer is opposite；
Mask plate is set on the 4th photoresist layer surface, and is exposure mask to the 4th photoresist using the mask plate
Layer is exposed and develops, partially to remove fourth photoresist layer of the every grade of step towards first direction；
Using remaining 4th photoresist layer as exposure mask, using inductively coupled plasma etching technique on every grade of step
Epitaxial structure performs etching, to form electrode platform apart from the smallest ledge surface away from substrate second surface and make other steps
On the buffer layer of epitaxial structure be exposed towards one side section of first direction.
Optionally, the etching technics used to the epitaxial structure is inductively coupled plasma etching technique.
A kind of light emitting diode, comprising:
Substrate, the substrate first surface have at least one level step, and the height of every grade of step successively subtracts along first direction
It is small；
Epitaxial structure on every grade of step, the epitaxial structure include the buffering stacked gradually positioned at ledge surface
Layer, the first type conductive layer, active area and second type conductive layer；
The sidewall surfaces of epitaxial structure towards first direction side on every grade of step are provided with separation layer, the separation layer
Cover the sidewall surfaces of the second type conductive layer and active area and the partial sidewall surface of the first type conductive layer, distance
The substrate second surface has electrode platform apart from the smallest ledge surface；
The buffer layer of the second type conductive layer surface and the epitaxial structure on every grade of step is covered towards first direction one
The transparency conducting layer of end surfaces, the first type conductive layer of the epitaxial structure on every grade of step and adjacent step in a first direction
On the second type conductive layer of epitaxial structure be electrically connected by the transparency conducting layer；
Deviate from the first electrode on the one side of substrate surface positioned at the electrode platform；
Positioned at the second electrode away from substrate second surface apart from maximum layer at transparent layer.
Optionally, the step that there is the first surface of the substrate at least one level to be formed by substrate through over etching.
Optionally, at least one level step of the substrate surface includes:
Step buffer layer；
Deviate from the step material layer of the substrate first surface side positioned at the step buffer layer；
The step that there is the step material layer at least one level to be formed by step material layer through over etching.
It can be seen from the above technical proposal that the embodiment of the invention provides a kind of light emitting diode and preparation method thereof,
Wherein, the preparation method of the light emitting diode is by forming at least one level step, and the shape on each step in substrate surface
At the mode of epitaxial structure, so that phase on the first type conductive layer and first direction of two adjacent epitaxial structures (luminescence unit)
Adjacent second type conductive layer at least partly contacts, and is etched and the formation of separation layer and transparency conducting layer by subsequent,
The electrical connection of second type conductive layer adjacent on the first type conductive layer and first direction of adjacent epitaxial structure is realized, thus
Realize connecting certainly in LED internal epitaxial structure.The light emitting diode formed by the above method is without passing through bridge
Receiving electrode realize epitaxial structure series connection, avoid bridged electrodes it is possible that risk of breakage, and simplify have it is more
The preparation difficulty of a concatenated light emitting diode of epitaxial structure.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow diagram of the preparation method for light emitting diode that one embodiment of the application provides；
Fig. 2-Fig. 9 is the preparation flow schematic diagram of the preparation method of light emitting diode shown in FIG. 1；
Figure 10 is that a kind of process of the preparation method for light emitting diode that another one embodiment of the application provides is shown
It is intended to；
Figure 11 is that a kind of process of the preparation method for light emitting diode that another one embodiment of the application provides is shown
It is intended to；
Figure 12-Figure 14 is a kind of preparation flow schematic diagram for step that one embodiment of the application provides；
Figure 15 is that a kind of process of the preparation method for light emitting diode that another one embodiment of the application provides is shown
It is intended to.
Figure 16-Figure 18 is a kind of preparation flow schematic diagram for separation layer that one embodiment of the application provides；
Figure 19 is a kind of process signal of the preparation method for light emitting diode that the specific embodiment of the application provides
Figure；
Figure 20-Figure 25 is a kind of preparation flow schematic diagram for electrode platform that one embodiment of the application provides.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present application provides a kind of preparation method of light emitting diode, as shown in Figure 1, comprising:
S101: substrate is provided；
It is the schematic diagram of the section structure of substrate with reference to Fig. 2, Fig. 2.Label 10 in Fig. 2 indicates the substrate.
S102: the substrate first surface formed at least one level step, the height of every grade of step along first direction successively
Reduce；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S102 with reference to Fig. 3, Fig. 3.In Fig. 3
Label 20 indicates the step.
It should be noted that the first direction is parallel with the substrate direction, in Fig. 3, first direction is arrow institute
Show direction, of course, in the other embodiments of the application, the first direction can also be opposite direction shown in arrow.This
Application is to this and without limitation, specific depending on actual conditions.
In addition, the numbers of steps that the substrate first surface can have can be 2,3,4,5 etc..Specifically regard described shine
Depending on the number of concatenated epitaxial structure needed for diode.
S103: forming epitaxial structure on every grade of step, and the epitaxial structure includes being located at ledge surface to stack gradually
Buffer layer, the first type conductive layer, active area and second type conductive layer, the side of the buffer layer of the epitaxial structure on every grade of step with
The side of the second type conductive layer of the epitaxial structure on adjacent step at least partly contacts in a first direction；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S103 with reference to Fig. 4, Fig. 4.In Fig. 4
Label 30 indicates the epitaxial structure, and 31 indicate buffer layers, and 32 indicate the first type conductive layers, and 33 indicate active areas, and 34 indicate the
Two type conductive layers.
It should be noted that the buffer layer, the first type conductive layer, active area and second type conductive layer are the epitaxy junction
The basic Component units (alternatively referred to as luminescence unit) of structure, on this basis, the epitaxial structure can also include other to LED
The performance of chip has the functional structure layer of optimization function.
The formation process of the first type conductive layer, active area and second type conductive layer includes but is not limited to that physical vapor is heavy
Long-pending (Physical Vapor Deposition, PVD), chemical vapor deposition (Chemical Vapor Deposition,
CVD), epitaxial growth (Epitaxy Growth Technology) and atom sediment (Atomic Layer Deposition,
ALD).Wherein, physical vapour deposition (PVD) includes but is not limited to hot evaporation and magnetron sputtering.The application to this and without limitation, specifically
Depending on actual conditions.
S104: performing etching the epitaxial structure on every grade of step, with away from substrate second surface apart from the smallest step
Surface forms electrode platform and the buffer layer of the epitaxial structure on other steps is exposed towards one side section of first direction；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S104 with reference to Fig. 5, Fig. 5.
It is the top view of structure shown in Fig. 5 with reference to Fig. 6, Fig. 6.Label 11 in Fig. 6 indicates the electrode platform, i.e., first
The production region of electrode.
S105: the epitaxial structure on every grade of step forms separation layer, the separation layer covering towards first direction side
The partial sidewall surface of the sidewall surfaces and the first type conductive layer of the second type conductive layer and active area；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S105 with reference to Fig. 7, Fig. 7.In the step
The purpose of setting separation layer is to protect in subsequent technique to the covering part of separation layer in rapid, subsequent also for avoiding
The case where transparency conducting layer of formation accidentally connect and is connected with second type conductive layer and active area appearance.40 table of label in Fig. 7
Show the separation layer.
S106: the second type conductive layer surface of epitaxial structure and exposed buffer-layer surface are formed on every grade of step
Bright conductive layer, so that outer on the first type conductive layer of the epitaxial structure on every grade of step and step adjacent in a first direction
The second type conductive layer for prolonging structure is electrically connected by the transparency conducting layer；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S106 with reference to Fig. 8, Fig. 8.In Fig. 8
Label 50 indicates the transparency conducting layer.
S107: first electrode is formed away from the one side of substrate surface in the electrode platform, and away from the second table of substrate
Identity distance forms second electrode from maximum layer at transparent layer.
It is the schematic diagram of the section structure of the substrate and its surface texture after step S107 with reference to Fig. 9, Fig. 9.It needs
Bright, the second surface of the substrate is away from the surface of the first surface side, apart from second surface apart from the smallest
Transparency conducting layer is located at the end region of substrate first direction；It is located at apart from substrate second surface apart from maximum transparency conducting layer
The initiation region of substrate first direction.
Label 60 in Fig. 9 indicates the second electrode, and 70 indicate the first electrode.
The light emitting diode prepared by the above method passes through the step being arranged on substrate, so that being formed on adjacent step
Epitaxial structure the first type conductive layer and first direction on adjacent second type conductive layer can at least partly contact, so as to
To be realized on the first type conductive layer and first direction of the epitaxial structure on adjacent step by the transparency conducting layer being subsequently formed
The electrical connection of adjacent second type conductive layer, at least two epitaxial structures realized through the above way may not need from series connection
Realized by way of building bridged electrodes, avoid bridged electrodes it is possible that risk of breakage, and simplify and have
The preparation difficulty of multiple concatenated light emitting diodes of epitaxial structure.
In addition, the epitaxial structure of above method preparation forms the side of separation layer by the epitaxial structure side wall in each step
Formula protects separation layer institute covering part, also avoids the transparency conducting layer being subsequently formed covering epitaxial layer side wall, so that
The second type conductive layer of single extension light emitting structure, active area, the first type conductive layer connect and are connected and form short circuit alone.
On the basis of the above embodiments, one kind is provided in one embodiment of the application to be formed on the substrate at least
Two kinds of feasible patterns of level-one step:
It is described to include: in substrate surface formation at least one level step with reference to Figure 10
S1021: performing etching the substrate, to form at least one level step over the substrate.
It should be noted that directly substrate is performed etching to be formed at least one level step way process it is relatively simple, but
It is when step number is more, it is desirable to provide thicker substrate meets the formation of multi-stage stairs.
It is described to include: in substrate surface formation at least one level step with reference to Figure 11
S1022: step buffer layer is formed in the substrate surface；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S1022, Figure 12 with reference to Figure 12, Figure 12
In label 21 indicate the step buffer layer.
S1023: step material layer is formed in the step buffer-layer surface；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S1023 with reference to Figure 13, Figure 13.Figure 13
In label 22 indicate the step material layer.
S1024: performing etching the step material layer, to form at least one level step.
It is the schematic diagram of the section structure of the substrate and its surface texture after step S1024 with reference to Figure 14, Figure 14.
In the present embodiment, pass through volume first without performing etching to substrate during forming at least one level and adjusting
External bucket step buffer layer and step material layer, the mode then performed etching to step material layer form at least one level step,
During this formation at least one level step, without proposing thickness requirement to substrate.The application is to formation at least one level platform
The specific method of rank and without limitation, specifically depending on actual conditions.
On the basis of the above embodiments, described to every grade of step with reference to Figure 15 in another embodiment of the application
On epitaxial structure perform etching, electrode platform and to make other being formed away from substrate second surface apart from the smallest ledge surface
The buffer layer of epitaxial structure on step is exposed towards one side section of first direction
S1051: the second type conductive layer surface of the epitaxial structure on every grade of step forms one layer of first photoresist layer；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S1051, Figure 16 with reference to Figure 16, Figure 16
In label PR1 indicate first photoresist layer.
S1052: the expose portion surface of the buffer layer of the epitaxial structure on every grade of step forms one layer of second photoresist
Layer, the thickness of second photoresist layer are less than the thickness of first photoresist layer；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S1052 with reference to Figure 17, Figure 17.Figure 17
In label PR2 indicate second photoresist layer.
S1053: the sidewall surfaces of the epitaxial structure on every grade of step grow separation layer, so that the separation layer covers completely
The sidewall surfaces of the second type conductive layer and active area towards first direction are covered, and part covers the first type conductive layer court
To the sidewall surfaces of first direction；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S1053 with reference to Figure 18, Figure 18.
S1054: removal first photoresist layer and second type photoresist layer.
It is the schematic diagram of the section structure of the substrate and its surface texture after step S1054 with reference to Fig. 7, Fig. 7.
Optionally, the etching technics used to the epitaxial structure is inductively coupled plasma etching (Inductive
Coupled Plasma Emission Spectrometer), ICP) technique.
On the basis of the above embodiments, as shown in figure 19, described to every grade in the specific embodiment of the application
Epitaxial structure on step performs etching, to form electrode platform apart from the smallest ledge surface away from substrate second surface and make
The buffer layer of epitaxial structure on other steps is exposed towards one side section of first direction
S1041: the second type conductive layer surface of the epitaxial structure on every grade of step forms one layer of sacrificial layer；
The schematic diagram of the section structure of substrate and its surface texture after step S1041 refers to Figure 20；Mark in Figure 20
Number SA indicates the sacrificial layer.
S1042: the sacrificial layer removal away from the substrate second surface on the smallest step will be located at；
The schematic diagram of the section structure of substrate and its surface texture after step S1042 refers to Figure 21.
S1043: the is formed in the sacrificial layer surface and with the second surface on the smallest step of the substrate distance
Three photoresist layers；
The schematic diagram of the section structure of substrate and its surface texture after step S1043 refers to Figure 22；Mark in Figure 22
Number PR3 indicates the third photoresist layer.
S1044: by erosion removal sacrificial layer, while the third photoresist layer of sacrificial layer surface is removed；
The schematic diagram of the section structure of substrate and its surface texture after step S1044 refers to Figure 23.
S1045: the 4th light is formed simultaneously in the second type conductive layer surface and third photoresist layer surface being exposed
The colloidality of photoresist layer, the third photoresist layer and the 4th photoresist layer is opposite；
The schematic diagram of the section structure of substrate and its surface texture after step S1045 refers to Figure 24；Mark in Figure 24
Number PR4 indicates the 4th photoresist layer.
S1046: mask plate is set on the 4th photoresist layer surface, and is exposure mask to the described 4th using the mask plate
Photoresist layer is exposed and develops, partially to remove fourth photoresist layer of the every grade of step towards first direction.
The schematic diagram of the section structure of substrate and its surface texture after step S1046 refers to Figure 25.
S1047: using remaining 4th photoresist layer as exposure mask, using inductively coupled plasma etching technique to every grade of platform
Epitaxial structure on rank performs etching, to form electrode platform apart from the smallest ledge surface away from substrate second surface and make it
The buffer layer of epitaxial structure on his step is exposed towards one side section of first direction.
The schematic diagram of the section structure of substrate and its surface texture after step S1047 refers to Fig. 5.
It should be noted that purpose existing for the sacrificial layer is formed in removal step S1042 positioned at except away from institute
While stating sacrificial layer of the substrate second surface on the smallest step, the third photoresist layer on its surface is removed, is only retained
Third photoresist layer away from the substrate second surface on the smallest step；Optionally, the sacrificial layer can be dioxy
The conventional dielectric layers such as SiClx, the method for removing the sacrificial layer can be using wet etching, for example, by using BOE solution to titanium dioxide
Silicon layer is dissolved.
In addition, the colloidality of the third photoresist layer and the 4th photoresist layer in step S1045 on the contrary, so that only go
Except every grade of step is towards the 4th photoresist layer of first direction, and it is retained in away from the substrate second surface apart from the smallest step
On third photoresist layer.For example, the third photoresist layer can be positive photoresist layer, the 4th photoresist layer can be with
For negativity photoresist layer；Being also possible to the third photoresist layer is negativity photoresist layer, and the 4th photoresist layer is positivity
Photoresist layer；When the colloidality difference of the 4th photoresist layer, the requirement to the shape of the mask plate of step S1045 is not yet
Together, the application to this and without limitation, specifically depending on actual conditions.
In step S1046, due to also remaining with third photoresist layer above the electrode platform, using
When inductively coupled plasma etching technique (ICP) performs etching the epitaxial structure on every grade of step, above electrode platform
Etching depth can be less than the etching depth of the epitaxial structure on other steps, to retain the first type conductive layer of part as institute
State electrode platform.
Correspondingly, with reference to Fig. 9, the light emitting diode includes: the embodiment of the present application also provides a kind of light emitting diode
Substrate 10,10 first surface of substrate have at least one level step 20, and the height of every grade of step 20 is along first party
To being sequentially reduced；
Epitaxial structure 30 on every grade of step 20, the epitaxial structure 30 include being located at 20 surface of step to stack gradually
Buffer layer 31, the first type conductive layer 32, active area 33 and second type conductive layer 34；
The sidewall surfaces of epitaxial structure 30 towards first direction side on every grade of step 20 are provided with separation layer 40, described
Separation layer 40 covers the sidewall surfaces of the second type conductive layer 34 and active area 33 and the portion of the first type conductive layer 32
Divide sidewall surfaces；
The buffer layer 31 of 34 surface of second type conductive layer and the epitaxial structure 30 on every grade of step 20 is covered towards
The transparency conducting layer 50 of one direction end surface, the first type conductive layer 32 of the epitaxial structure 30 on every grade of step 20 with first
The second type conductive layer 34 of epitaxial structure 30 on direction on adjacent step 20 is electrically connected by the transparency conducting layer 50；
Positioned at the first electricity away from 10 second surface of substrate apart from the smallest first type conductive layer, 32 electrode fabrication platform surface
Pole 70；
Positioned at the second electrode 60 away from 10 second surface of substrate apart from maximum 50 surface of transparency conducting layer.
The light emitting diode is by the step 20 that is arranged on substrate 10, so that the epitaxy junction formed on adjacent step 20
Adjacent second type conductive layer 34 can be contacted at least partly on the first type conductive layer 32 and first direction of structure 30, so as to
The first type conductive layer 32 and first of the epitaxial structure 30 on adjacent step 20 is realized by the transparency conducting layer 50 being subsequently formed
The electrical connection of adjacent second type conductive layer 34 on direction, at least two epitaxial structures 30 realized through the above way are gone here and there certainly
Connection may not need and be realized by way of building bridged electrodes, avoid bridged electrodes it is possible that risk of breakage, and
Simplify the preparation difficulty with the concatenated light emitting diode of multiple epitaxial structures 30.
In addition, the epitaxial structure 30 of the light emitting diode by each step 20 30 side wall of epitaxial structure formed every
The mode of absciss layer 40 protects 40 covering parts of separation layer, and the transparency conducting layer 50 being subsequently formed is avoided to cover epitaxial layer
Side wall so that alone the second type conductive layer 34 of single extension light emitting structure, active area 33, the first type conductive layer 32 connection and
Conducting forms short circuit.
Optionally, the step 20 that there is the first surface of the substrate 10 at least one level to be formed by substrate 10 through over etching.
Optionally, at least one level step 20 on 10 surface of substrate includes:
20 buffer layer 31 of step；
Deviate from 20 material layer of step of the 10 first surface side of substrate positioned at 20 buffer layer 31 of step；
The step 20 that there is 20 material layer of step at least one level to be formed by 20 material layer of step through over etching.
The specific forming process of above two step 20 is with reference to above for the preparation method of light emitting diode.
In conclusion the embodiment of the present application provides a kind of light emitting diode and preparation method thereof, wherein pass through the hair
The light emitting diode of optical diode preparation method preparation passes through the step being arranged on substrate, so that is formed on adjacent step is outer
Prolonging second type conductive layer adjacent on the first type conductive layer and first direction of structure can at least partly contact, so as to logical
Cross the transparency conducting layer being subsequently formed realize it is adjacent on the first type conductive layer and first direction of the epitaxial structure on adjacent step
Second type conductive layer electrical connection, at least two epitaxial structures realized through the above way may not need and passes through from series connection
The mode for building bridged electrodes realizes, avoid bridged electrodes it is possible that risk of breakage, and simplify with multiple
The preparation difficulty of the concatenated light emitting diode of epitaxial structure.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (9)
1. a kind of preparation method of light emitting diode characterized by comprising
Substrate is provided；
At least one level step is formed in the substrate first surface, the height of every grade of step is sequentially reduced along first direction；
Form epitaxial structure on every grade of step, the epitaxial structure includes the buffer layer stacked gradually positioned at ledge surface, the
One type conductive layer, active area and second type conductive layer, the side of the buffer layer of the epitaxial structure on every grade of step in first party
The side of the second type conductive layer of the epitaxial structure on adjacent step at least partly contacts upwards；
Epitaxial structure on every grade of step is performed etching, to form electricity apart from the smallest ledge surface away from substrate second surface
The buffer layer of the epitaxial structure on other steps simultaneously is exposed towards one side section of first direction in Polar Patform；
Epitaxial structure on every grade of step forms separation layer towards first direction side, and the separation layer covers the second type
The partial sidewall surface of the sidewall surfaces and the first type conductive layer of conductive layer and active area；
The second type conductive layer surface of epitaxial structure and exposed buffer-layer surface form transparency conducting layer on every grade of step,
So that the first type conductive layer of the epitaxial structure on every grade of step and the epitaxial structure on adjacent step in a first direction
Second type conductive layer is electrically connected by the transparency conducting layer；
First electrode is formed away from the one side of substrate surface in the electrode platform, and maximum away from substrate second surface distance
Layer at transparent layer formed second electrode.
2. the method according to claim 1, wherein described form at least one level step packet in the substrate surface
It includes:
The substrate is performed etching, to form at least one level step over the substrate.
3. the method according to claim 1, wherein described form at least one level step packet in the substrate surface
It includes:
Step buffer layer is formed in the substrate surface；
Step material layer is formed in the step buffer-layer surface；
The step material layer is performed etching, to form at least one level step.
4. the method according to claim 1, wherein the epitaxial structure on every grade of step is towards first party
Forming separation layer to side includes:
The second type conductive layer surface of epitaxial structure on every grade of step forms one layer of first photoresist layer；
One layer of second photoresist layer of expose portion surface formation of the buffer layer of epitaxial structure on every grade of step, described second
The thickness of photoresist layer is less than the thickness of first photoresist layer；
The sidewall surfaces of epitaxial structure on every grade of step grow separation layer, so that the separation layer is completely covered described second
Type conductive layer and active area are towards the sidewall surfaces of first direction, and part covers the first type conductive layer towards first direction
Sidewall surfaces；
Remove first photoresist layer and second type photoresist layer.
5. the method according to claim 1, wherein the epitaxial structure on every grade of step performs etching,
To form electrode platform apart from the smallest ledge surface away from substrate second surface and make the slow of the epitaxial structure on other steps
It rushes layer and is exposed towards one side section of first direction and include:
The second type conductive layer surface of epitaxial structure on every grade of step forms one layer of sacrificial layer；
The sacrificial layer removal away from the substrate second surface on the smallest step will be located at；
Third photoresist layer is formed in the sacrificial layer surface and with the second surface on the smallest step of the substrate distance；
By erosion removal sacrificial layer, while removing the third photoresist layer of sacrificial layer surface；
It is formed simultaneously the 4th photoresist layer in the second type conductive layer surface and third photoresist layer surface being exposed, it is described
The colloidality of third photoresist layer and the 4th photoresist layer is opposite；
The 4th photoresist layer surface be arranged mask plate, and using the mask plate as exposure mask to the 4th photoresist layer into
Row exposure and imaging, partially to remove fourth photoresist layer of the every grade of step towards first direction；
Using remaining 4th photoresist layer as exposure mask, using inductively coupled plasma etching technique to the extension on every grade of step
Structure performs etching, to form electrode platform apart from the smallest ledge surface away from substrate second surface and make on other steps
The buffer layer of epitaxial structure is exposed towards one side section of first direction.
6. the method according to claim 1, wherein the etching technics used to the epitaxial structure is inductance coupling
Close plasma etch process.
7. a kind of light emitting diode characterized by comprising
Substrate, the substrate first surface have at least one level step, and the height of every grade of step is sequentially reduced along first direction；
Epitaxial structure on every grade of step, the epitaxial structure include the buffer layer stacked gradually positioned at ledge surface, the
One type conductive layer, active area and second type conductive layer；
The sidewall surfaces of epitaxial structure towards first direction side on every grade of step are provided with separation layer, the separation layer covering
The partial sidewall surface of the sidewall surfaces and the first type conductive layer of the second type conductive layer and active area, described in
Substrate second surface has electrode platform apart from the smallest ledge surface；
The buffer layer of the second type conductive layer surface and the epitaxial structure on every grade of step is covered towards first direction one end table
The transparency conducting layer in face, the first type conductive layer of the epitaxial structure on every grade of step on adjacent step in a first direction
The second type conductive layer of epitaxial structure is electrically connected by the transparency conducting layer；
Deviate from the first electrode on the one side of substrate surface positioned at the electrode platform；
Positioned at the second electrode away from substrate second surface apart from maximum layer at transparent layer.
8. light emitting diode according to claim 7, which is characterized in that the first surface of the substrate has at least one level
The step formed by substrate through over etching.
9. light emitting diode according to claim 7, which is characterized in that at least one level step packet of the substrate surface
It includes:
Step buffer layer；
Deviate from the step material layer of the substrate first surface side positioned at the step buffer layer；
The step that there is the step material layer at least one level to be formed by step material layer through over etching.
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