CN107910411A - Light emitting diode and preparation method thereof - Google Patents
Light emitting diode and preparation method thereof Download PDFInfo
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- CN107910411A CN107910411A CN201711140866.2A CN201711140866A CN107910411A CN 107910411 A CN107910411 A CN 107910411A CN 201711140866 A CN201711140866 A CN 201711140866A CN 107910411 A CN107910411 A CN 107910411A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Abstract
The present invention provides a kind of light emitting diode and preparation method thereof, the light emitting diode includes：Substrate, the laminated construction on the substrate, the u GaN on the laminated construction, the n GaN on the u GaN, the quantum well structure on the n GaN, the p GaN on the quantum well structure；Light emitting diode provided by the present invention and preparation method thereof, by forming the laminated construction with aluminium nitride and gallium nitride on substrate, release progressively will be carried out because of stress caused by hetero-epitaxy during laminated construction is formed, the dislocation for avoiding producing in growth course penetrates to epitaxial layer and then influence the performance of the crystalline quality of epitaxial layer and the light emitting diode being eventually fabricated.
Description
Technical field
The present invention relates to lighting technical field, and in particular to a kind of light emitting diode and preparation method thereof.
Background technology
Compared with traditional lighting, semiconductor light-emitting-diode (light-emission diodes, LED) especially nitrogenizes
Thing (gallium nitride) light emitting diode has higher luminous efficiency, therefore is more and more widely used in lighting area.
For making light emitting diode, the problem of selection of substrate material is overriding concern.Which kind of should use close
Suitable substrate according to the requirement of equipment and LED component, it is necessary to make choice.Generally there are three kinds of materials to be used as lining on the market at present
Bottom, is respectively：Sapphire (Al2O3), silicon (Si), carborundum (SiC).
In general, the epitaxial layer of gallium nitride-based material and device is mainly grown on a sapphire substrate.Sapphire Substrate and silicon
Substrate, silicon carbide substrates are compared to there is the advantages of many：First, the production technology of Sapphire Substrate is ripe, device quality is preferable；Its
Secondary, sapphire stability is fine, can be used in higher temperature growth processes；Finally, sapphire high mechanical strength, is easy to locate
Reason and cleaning.Therefore, most of techniques are generally all used as substrate using sapphire.
Using sapphire as substrate there is also some problems, due to being using hetero-epitaxy (Heteroepitaxy on sapphire
Gallium nitride), lattice mismatch and thermal mismatching cause in the LED device of growth that there are substantial amounts of dislocation defects, these dislocations
The growth quality of epitaxial layer is reduced, causes the reduction of light-emitting diode luminous efficiency, the reduction in service life, and the drop of reliability
It is low.
The mismatch that two kinds of different materials of alleviation can be played by advance low temperature growth buffer layer on a sapphire substrate is asked
Inscribe, low temperature buffer layer is disclosed in such as Application No. CN200910062768.0, CN201120107283.1 patent document
Technology.Current commercialized method is first at 400~600 DEG C in MOCVD (metal organic chemical vapor deposition) growth course
Under the conditions of low temperature growth buffer layer, after being then warming up to 900~1100 DEG C of growing three-dimensionals or quasi- two-dimensional layer nitride, then adjust
The nitride surface of the gain of parameter plane such as chamber pressure, temperature.Although being capable of pole using the MOCVD low temperature buffer layers grown
Big reduction dislocation density, but because the limitation of growth conditions, the thickness of cushion still has big substantially all in more than 20nm
Amount dislocation density is penetrated to epitaxial layer；In addition, because MOCVD low temperature growth buffers layer still uses the bigger conditions of V/III,
Growth rate is often depending on the flow of group III source, when substrate dimension is equal to or more than 4 cun, because the inequality of group III source
Even property causes thickness evenness poor, the dislocation density in epitaxial layer is also differed greatly on wafer.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of light emitting diode and preparation method thereof.
The technical problems to be solved by the invention are realized using following technical scheme：
A kind of light emitting diode, including：Substrate, the laminated construction on the substrate, on the laminated construction
U-GaN, the n-GaN on the u-GaN, the quantum well structure on the n-GaN, positioned at the quantum well structure
On p-GaN；The laminated construction includes nitride multilayer gallium layer and nitride multilayer aluminium lamination, has between adjacent gallium nitride layer described
Aln layer, the gallium nitride layer number of plies are equal to the aln layer number of plies, and lowermost end and substrate contact are gallium nitride layer in laminated construction,
Top and u-GaN contact layers are aln layer in laminated construction；The u-GaN is undoped gallium nitride layer, and the n-GaN is
N-shaped doped gallium nitride layer, the quantum well structure include well layer and multilayer barrier layer, and the barrier layer is perpendicular to the n-GaN tables
It is stacked on the direction in face, there is the well layer between adjacent barrier layer, the p-GaN is p-type doped gallium nitride layer.
Optionally, the laminated construction thickness is 20~50nm.
Optionally, aln layer and gallium nitride layer thickness ratio are 1 in the laminated construction:(2~3).
Optionally, at least one includes aluminum gallium nitride between gallium nitride layer and aln layer in the laminated construction
Layer.
Optionally, the gallium nitride layer is less than apart from the substrate distance apart from u-GaN distances.
Optionally, the gallium nitride layer is apart from the 1/5~3/5 of the substrate distance apart from the distance of the u-GaN.
Optionally, in the laminated construction aln layer at least one be indium aluminium nitrogen layer.
Optionally, in the laminated construction gallium nitride layer at least one be indium gallium nitrogen layer.
A kind of preparation method of light emitting diode, including：
Substrate is provided；
Laminated construction is formed over the substrate；
U-GaN is formed on the stacked structure；
N-GaN is formed on the u-GaN；
Quantum well structure is formed on the n-GaN；
P-GaN is formed on the quantum well structure；
The laminated construction includes nitride multilayer gallium layer and nitride multilayer aluminium lamination, has the nitrogen between adjacent gallium nitride layer
Change aluminium lamination, the gallium nitride layer number of plies is equal to the aln layer number of plies, and lowermost end and substrate contact are gallium nitride layer in laminated construction, folded
Top and u-GaN contact layers are aln layer in Rotating fields；The u-GaN is undoped gallium nitride layer, and the n-GaN is n
Type doped gallium nitride layer, the quantum well structure include well layer and multilayer barrier layer, and the barrier layer is perpendicular to the n-GaN surfaces
Direction on be stacked, there is the well layer, the p-GaN is p-type doped gallium nitride layer between adjacent barrier layer.
Optionally, the preparation method is further included to substrate pre-treatment step, the pre-treatment step be 900 DEG C~
1200 DEG C, nitrogen, hydrogen flowing quantity ratio are 1:Handled 5~10 minutes under the conditions of (3~5).
The beneficial effects of the invention are as follows：Light emitting diode provided by the present invention, has nitridation by being formed on substrate
The laminated construction of aluminium and gallium nitride, will carry out progressively during laminated construction is formed because of stress caused by hetero-epitaxy
Release, the dislocation for avoiding producing in growth course penetrate to epitaxial layer and then influence the crystalline quality of epitaxial layer and be eventually fabricated
Light emitting diode performance；Since the temperature of growing aluminum nitride is delayed higher than (800 DEG C~1100 DEG C) low temperature of the prior art
Layer (400 DEG C~600 DEG C) is rushed, the growth rate of gallium nitride is improved during laminated construction is formed, it is not necessary to by III
The increase of clan source flow improves growth rate, improves the uniformity of thickness；With aluminium nitride is used alone as cushion phase
Than laminated construction can preferably be reduced the mismatch between substrate and epitaxial layer, obtained by the release by stress progress progressively
Epi-layer surface pattern it is more smooth.
Brief description of the drawings
Fig. 1 is prior art light emitting diode construction schematic diagram；
Fig. 2 is prior art light emitting diode quantum well structure schematic diagram；
Fig. 3 is light emitting diode construction schematic diagram provided by the present invention；
Fig. 4 is light emitting diode laminated construction schematic diagram provided by the present invention；
Fig. 5 is light emitting diode preparation method flow chart provided by the invention.
Embodiment
Light emitting diode in by MOCVD device manufacturing process there are problems, for example, the light-emitting diodes formed
The poor-performing of pipe.
In conjunction with light emitting diode construction and its manufacturing process, the reason for analyzing the light emitting diode poor-performing：
Please refer to Fig.1, Fig. 2, light emitting diode 100 of the prior art includes：Substrate 102；The shape on the substrate 102
Into cushion 103；The u-GaN106 formed on the cushion 103, the n-GaN108 formed on the u-GaN106,
The quantum well structure 110 formed on the n-GaN108, the p-GaN112 formed on the quantum well structure 110.
Wherein described cushion 103 is low temperature nitride gallium layer, and the u-GaN106 is undoped gallium nitride layer, the n-
GaN108 is N-shaped doped gallium nitride layer, and the quantum well structure 110 includes well layer 110b and multilayer barrier layer 110a, the barrier layer
110a is stacked on the direction on the n-GaN108 surfaces, has the well layer between adjacent barrier layer 110a
110b, the p-GaN112 are p-type doped gallium nitride layer.
As mentioned in the background, two kinds of alleviation can be played not by advance low temperature growth buffer layer on substrate
With the mismatch problems of material, but because the limitation of growth conditions, the thickness of cushion still has big substantially all in more than 20nm
Amount dislocation density is penetrated to epitaxial layer；In addition, because MOCVD low temperature growth buffers layer still uses the bigger conditions of V/III,
Growth rate is often depending on the flow of group III source, when substrate dimension is equal to or more than 4 cun, because the inequality of group III source
Even property causes thickness evenness poor, the dislocation density in epitaxial layer is also differed greatly on wafer.
To solve the technical problem, the present invention provides a kind of light emitting diode, please refers to Fig.3, Fig. 4, including：Substrate
102；Laminated construction 104 on the substrate 102；U-GaN106 on the laminated construction 104；Positioned at the u-
N-GaN108 on GaN106；Quantum well structure 110 on the n-GaN108；On the quantum well structure 110
P-GaN112.
Wherein described laminated construction 104 includes nitride multilayer gallium layer 104b and nitride multilayer aluminium lamination 104a, adjacent gallium nitride
There is the aln layer 104a between layer 104b, the gallium nitride layer 104b numbers of plies are equal to the aln layer 104a numbers of plies, laminated construction
Middle lowermost end and substrate contact be gallium nitride layer 104b, and top and u-GaN106 contact layers are aln layer in laminated construction
104a。
Compared with gallium nitride, aluminium nitride has the lattice mismatch and thermal mismatching of smaller, while aluminium nitride and nitridation with substrate
Gallium has good compatibility, by forming the laminated construction with aluminium nitride and gallium nitride on substrate, is forming laminated construction
During will carry out release progressively because of stress caused by hetero-epitaxy, the dislocation for avoiding producing in growth course penetrate to
Epitaxial layer and then the performance for influencing the crystalline quality of epitaxial layer and the light emitting diode being eventually fabricated；Due to growing aluminum nitride
Temperature is higher than (800 DEG C~1100 DEG C) low temperature buffer layer of the prior art (400 DEG C~600 DEG C), is forming laminated construction
During improve the growth rate of gallium nitride, it is not necessary to improve growth rate by the increase of III group source flux, improve
The uniformity of thickness；Compared with aluminium nitride is used alone as cushion, laminated construction can be by the way that stress be carried out progressively
Release, preferably reduces the mismatch between substrate and epitaxial layer, and obtained epi-layer surface pattern is more smooth.
When preparing light emitting diode by metal organic chemical vapor deposition technique, substrate is usually placed in slide glass dish
On be then passed in reaction chamber and deposited, can also not deposited at the same time with substrate contact part in slide glass dish in deposition process
Each layer that light emitting diode is included, needs after deposition to take slide glass dish away baking or etching to reuse, due to
Laminated construction is one layer be deposited on substrate at first, thus laminated construction is also one layer contacted at first with slide glass dish, if
Laminated construction lowermost end and substrate contact be aluminium nitride, and aluminium nitride decomposition temperature is high, chemical property is stablized, by toasting or
Person's etching is difficult to remove totally when cleaning slide glass dish, not only influences whether follow-up normal production, while can also shorten load
The service life of piece disk, laminated construction lowermost end and substrate contact for gallium nitride layer then can easily by toast or etch by
Slide glass dish surface cleaning is clean.
The hole produced in the electronics and p-GaN layer that are produced in n-GaN layers of light emitting diode is compound in quantum well structure
Shine, thus light emitting source is located on laminated construction, top and u-GaN contact layers are aln layer in laminated construction, aluminium nitride
Layer reflectivity is higher than gallium nitride layer reflectivity, can further improve light extraction efficiency.
Buffer layer thickness provided in the prior art is 10~30nm, laminated construction provided by the invention 104 1 compared with
Good thickness range is 1 in 20~50nm, aln layer 104a and gallium nitride layer 104b thickness ratio:(2~3).It is if described folded
The thickness of Rotating fields 104 is too small, and rough surface is easily produced in pyroprocess；If the laminated construction 104
Thickness is excessive, and larger stress and warpage can be gathered inside laminated construction, particularly large scale epitaxial structure.
At least one is wrapped between gallium nitride layer 104b and aln layer 104a in wherein described laminated construction 104
Gallium nitride layer is included, by setting gallium nitride layer further to reduce the stress produced in laminated construction 104 itself, reduces laminated construction
The dislocation density produced in 104, improves 104 crystalline quality of laminated construction, so that laminated construction 104 plays preferably buffering and makees
With.
Pass through verification experimental verification, when laminated construction 104 includes a gallium nitride layer, the gallium nitride layer distance u-
GaN106 distances are less than apart from 102 distance of substrate, can reach more preferably stress release effect, it is preferred that the gallium nitride layer
The distance of distance u-GaN106 is apart from the 1/5~3/5 of 102 distance of substrate.
In the laminated construction aln layer at least one for indium aluminium nitrogen layer or gallium nitride layer at least one
For indium gallium nitrogen layer.Aln layer or gallium nitride layer doped indium in laminated construction, can preferably improve aln layer and nitridation
Gallium layer contact interface, reduces contact interface dislocation density.
Present invention also offers the preparation method with above-mentioned corresponding light emitting diode, referring to Fig. 5, the preparation method bag
Include：
Step 402：Substrate is provided.
In the present embodiment, the material of the substrate is sapphire.In other embodiments, the material of the substrate can be with
For gallium nitride, silicon, zinc oxide or carborundum.
In the present embodiment, preferably substrate is pre-processed, substrate is carried out preferred orientation, while remove and remain in substrate
The debris such as the particle on surface, obtain the more preferable light emitting diode of crystalline quality, and the pre-treatment step is under the high temperature conditions
Substrate is pre-processed in hydrogen and nitrogen mixture atmosphere, preferably at 900 DEG C~1200 DEG C, nitrogen, hydrogen flowing quantity ratio are 1:
Handled 5~10 minutes under the conditions of (3~5).
Step 404：Laminated construction is formed over the substrate.
In the present embodiment, the laminated construction includes nitride multilayer gallium layer and nitride multilayer aluminium lamination, adjacent gallium nitride layer it
Between there is the aln layer, the gallium nitride layer number of plies is equal to the aln layer number of plies, lowermost end and substrate contact in laminated construction
For gallium nitride layer, top and u-GaN contact layers are aln layer in laminated construction.
In the present embodiment, the laminated construction thickness is 20~50nm, and aln layer is 1 with gallium nitride layer thickness ratio:(2
~3).
In the present embodiment, can also in the laminated construction between gallium nitride layer and aln layer at least within it
One includes gallium nitride layer, by setting gallium nitride layer further to reduce the stress produced in laminated construction itself, reduces lamination knot
The dislocation density produced in structure, improves laminated construction crystalline quality, so that laminated construction plays more preferable cushioning effect.Work as lamination
When structure includes a gallium nitride layer, the gallium nitride layer distance u-GaN distances are less than apart from substrate distance, can reach more
Good stress release effect, preferably, the distance of the gallium nitride layer distance u-GaN is apart from the 1/5~3/ of substrate distance
5。
In the present embodiment, forming the technique of the laminated construction includes：Metal organic chemical compound vapor deposition technique.
In the present embodiment, forming the reacting gas of the laminated construction includes：Gallium source gas body, aluminum source gas and nitrogen source gas
Body.The gallium source gas body is combined including one or both of trimethyl gallium (TMGa) and triethyl-gallium (TEGa), source of aluminium
Gas is trimethyl aluminium (TMAl), and the nitrogen source gas include ammonia (NH3)；Carrier gas is included in nitrogen (N2) and hydrogen (H2)
One or two combination.
Step 406：U-GaN is formed on the stacked structure.
In the present embodiment, the u-GaN is undoped with GaN.
In the present embodiment, forming the technique of the u-GaN includes：Metal organic chemical compound vapor deposition technique.
In the present embodiment, forming the reacting gas of the u-GaN includes：Gallium source gas body and nitrogen source gas.The gallium source gas
Body is combined including one or both of trimethyl gallium (TMGa) and triethyl-gallium (TEGa), and the nitrogen source gas include ammonia
(NH3)；Carrier gas is combined including one or both of nitrogen (N2) and hydrogen (H2).
In the present embodiment, if the temperature for forming the u-GaN is too low, easily make the u-GaN crystalline qualities to be formed poor；
If the temperature for forming the u-GaN is excessive, surface defect is be easy to cause.Specifically, form the technological parameter bag of the u-GaN
Include：Reaction temperature is 800 DEG C~1200 DEG C.
In the present embodiment, if the thickness of the u-GaN is too small, it is not easy to which the figure on substrate is covered；It is if described
The thickness of u-GaN is excessive, easily produces larger warpage and waste of material and production cost.Specifically, the thickness of the u-GaN
Spend for 0.5 μm~8 μm.
Step 408：N-GaN is formed on the u-GaN.
In the present embodiment, the n-GaN is used for the anode for forming light emitting diode.
Specifically, the n-GaN is the GaN containing N-shaped ion.
In the present embodiment, the N-shaped ion is silicon ion.The doping concentration of silicon ion in the n-GaN is
1E17atoms/cm3~3E19atoms/cm3.
In the present embodiment, forming the technique of the n-GaN includes：Metal organic chemical vapor deposition technique.
In the present embodiment, forming the reacting gas of the n-GaN includes：Gallium source gas body, nitrogen source gas and silicon source gas, institute
State gallium source gas body to combine including one or both of trimethyl gallium (TMGa) and triethyl-gallium (TEGa), the nitrogen source gas bag
Ammonia (NH3) is included, the silicon source gas includes silane (SiH4)；Carrier gas includes one kind or two in nitrogen (N2) and hydrogen (H2)
Kind combination.
If the temperature for forming the n-GaN is too low, easily make the n-GaN lattice qualities to be formed poor；If form institute
It is excessive to state the temperature of n-GaN, be easy to cause surface defect.Specifically, in the present embodiment, forming the n-GaN reaction temperatures is
800 DEG C~1200 DEG C.
In the present embodiment, the thickness of the n-GaN is 0.5 μm~8 μm.
Step 410：Quantum well structure is formed on the n-GaN.
In the present embodiment, the quantum well structure is multi-quantum pit structure.In other embodiments, the quantum well structure
It can also be single quantum.
The quantum well structure can form multiple separated Quantum Well, so as to increase the quantum of institute's formation Light-Emitting Diode
Efficiency, improves the luminous efficiency of Light-Emitting Diode.
In the present embodiment, the quantum well structure includes well layer and multilayer barrier layer, and the barrier layer is perpendicular to the n-GaN
It is stacked on the direction on surface, there is the well layer between adjacent barrier layer.
In the present embodiment, the material of the well layer is InGaN, and the material of the barrier layer is GaN.
In the present embodiment, the number of plies of the well layer is 2 layers~30 layers.The barrier layer is one layer more than well layer.The barrier layer
The number of plies is 3 layers~31 layers.
In the present embodiment, forming the technique of the well layer and the barrier layer includes：Metal organic chemical vapor deposition technique.
In the present embodiment, forming the reacting gas of the well layer includes：Gallium source gas body, nitrogen source gas and indium source gas body, institute
State gallium source gas body to combine including one or both of trimethyl gallium (TMGa) and triethyl-gallium (TEGa), the indium source gas body bag
Trimethyl indium (TMIn) is included, the nitrogen source gas include ammonia (NH3)；Carrier gas includes one kind in nitrogen (N2) and hydrogen (H2)
Or two kinds of combinations.
In the present embodiment, forming the technological parameter of the well layer includes：Reaction temperature is 600 DEG C~900 DEG C.
If the thickness of the well layer is excessive, easily increase the width of Quantum Well in quantum well structure, so as to reduce to amount
The constraint effect of electronics, easily increases the escape of electronics, reduces the luminous efficiency for forming light emitting diode in sub- trap；If institute
It is too small to state the thickness of well layer, easily increases technology difficulty.Specifically, in the present embodiment, the thickness of the well layer for 0.5nm~
5nm。
In the present embodiment, the content of indium is 15%~50% in the well layer.
In the present embodiment, forming the reacting gas of the barrier layer includes：Gallium source gas body and nitrogen source gas, the gallium source gas body
Combined including one or both of trimethyl gallium (TMGa) and triethyl-gallium (TEGa), the nitrogen source gas include ammonia
(NH3)；Carrier gas is combined including one or both of nitrogen (N2) and hydrogen (H2).
If the thickness of the barrier layer is too small, easily make, so as to increase the escape of electronics, being dropped with coupling for well layer
Low luminous efficiency；If the electric conductivity of the excessive easily increase quantum well structure of the thickness of the barrier layer, influences to form luminous two
The performance of pole pipe.Specifically, in the present embodiment, the thickness of the barrier layer is 0.5nm~5nm.
In the present embodiment, forming the technological parameter of the barrier layer includes：Reaction temperature is 600 DEG C~900 DEG C.
Step 412：P-GaN is formed on the quantum well structure.
In the present embodiment, the p-GaN is used as the cathode of formed light emitting diode.
Specifically, the p-GaN is the GaN containing p-type ion.
In the present embodiment, the p-type ion is magnesium ion.The doping concentration of magnesium in the p-GaN is 1E18atoms/
Cm3~2E20atoms/cm3.
In the present embodiment, forming the technique of the p-GaN includes：Metal organic chemical vapor deposition technique.
In the present embodiment, forming the reacting gas of the p-GaN includes：Gallium source gas body, nitrogen source gas and magnesium source gas body, institute
State gallium source gas body to combine including one or both of trimethyl gallium (TMGa) and triethyl-gallium (TEGa), the nitrogen source gas bag
Ammonia (NH3) is included, the magnesium source gas body includes two luxuriant magnesium (Cp2Mg)；Carrier gas includes one kind in nitrogen (N2) and hydrogen (H2)
Or two kinds of combinations.
In the present embodiment, forming the technological parameter of the p-GaN includes：Reaction temperature is 800 DEG C~1100 DEG C.
In the present embodiment, the thickness of the p-GaN is 30nm~50nm.
To sum up, in the preparation method of light emitting diode provided by the present invention, by being formed on substrate with aluminium nitride
With the laminated construction of gallium nitride, releasing progressively will be carried out because of stress caused by hetero-epitaxy during laminated construction is formed
Put, the dislocation that avoids producing in growth course penetrates to epitaxial layer and then influences the crystalline quality of epitaxial layer and be eventually fabricated
The performance of light emitting diode；Since the temperature of growing aluminum nitride is higher than (800 DEG C~1100 DEG C) low temperature buffer of the prior art
Layer (400 DEG C~600 DEG C), improves the growth rate of gallium nitride, it is not necessary to by III group during laminated construction is formed
The increase of source flux improves growth rate, improves the uniformity of thickness；Compared with aluminium nitride is used alone as cushion,
Laminated construction can preferably be reduced the mismatch between substrate and epitaxial layer, obtained by the release by stress progress progressively
Epi-layer surface pattern is more smooth.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the scope of restriction.
Claims (10)
- A kind of 1. light emitting diode, it is characterised in that including：Substrate, the laminated construction on the substrate, positioned at described folded U-GaN on Rotating fields, the n-GaN on the u-GaN, the quantum well structure on the n-GaN, positioned at the amount P-GaN on sub- well structure；The laminated construction includes nitride multilayer gallium layer and nitride multilayer aluminium lamination, between adjacent gallium nitride layer With the aln layer, the gallium nitride layer number of plies is equal to the aln layer number of plies, and lowermost end is with substrate contact in laminated construction Gallium nitride layer, top and u-GaN contact layers are aln layer in laminated construction；The u-GaN is undoped gallium nitride layer, institute It is N-shaped doped gallium nitride layer to state n-GaN, and the quantum well structure includes well layer and multilayer barrier layer, and the barrier layer is perpendicular to institute State and be stacked on the direction on n-GaN surfaces, there is the well layer between adjacent barrier layer, the p-GaN is p-type doped gallium nitride Layer.
- 2. light emitting diode as claimed in claim 1, it is characterised in that the laminated construction thickness is 20~50nm.
- 3. light emitting diode as claimed in claim 1 or 2, it is characterised in that aln layer and nitridation in the laminated construction Gallium layer thickness ratio is 1:(2~3).
- 4. light emitting diode as claimed in claim 1, it is characterised in that positioned at gallium nitride layer and nitridation in the laminated construction At least one includes gallium nitride layer between aluminium lamination.
- 5. light emitting diode as claimed in claim 4, it is characterised in that the gallium nitride layer is apart from the u-GaN apart from small In apart from the substrate distance.
- 6. light emitting diode as claimed in claim 4, it is characterised in that distance of the gallium nitride layer apart from the u-GaN For apart from the 1/5~3/5 of the substrate distance.
- 7. light emitting diode as claimed in claim 1, it is characterised in that in the laminated construction aln layer at least within it One is indium aluminium nitrogen layer.
- 8. light emitting diode as claimed in claim 1, it is characterised in that in the laminated construction gallium nitride layer at least within it One is indium gallium nitrogen layer.
- A kind of 9. preparation method of light emitting diode, it is characterised in that including：Substrate is provided；Laminated construction is formed over the substrate；U-GaN is formed on the stacked structure；N-GaN is formed on the u-GaN；Quantum well structure is formed on the n-GaN；P-GaN is formed on the quantum well structure；The laminated construction includes nitride multilayer gallium layer and nitride multilayer aluminium lamination, has the aluminium nitride between adjacent gallium nitride layer Layer, the gallium nitride layer number of plies are equal to the aln layer number of plies, and lowermost end and substrate contact are gallium nitride layer in laminated construction, lamination knot Top and u-GaN contact layers are aln layer in structure；The u-GaN is undoped gallium nitride layer, and the n-GaN mixes for N-shaped Miscellaneous gallium nitride layer, the quantum well structure include well layer and multilayer barrier layer, and the barrier layer is perpendicular to the side on the n-GaN surfaces It is stacked upwards, there is the well layer between adjacent barrier layer, the p-GaN is p-type doped gallium nitride layer.
- 10. the preparation method of light emitting diode as claimed in claim 9, it is characterised in that the preparation method is further included to lining Bottom pre-treatment step, the pre-treatment step are that nitrogen, hydrogen flowing quantity ratio are 1 at 900 DEG C~1200 DEG C:Under the conditions of (3~5) Processing 5~10 minutes.
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