CN107908076B - A kind of vortex light shear interference focus adjustment method in light field regulation photoetching - Google Patents
A kind of vortex light shear interference focus adjustment method in light field regulation photoetching Download PDFInfo
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- CN107908076B CN107908076B CN201710944259.5A CN201710944259A CN107908076B CN 107908076 B CN107908076 B CN 107908076B CN 201710944259 A CN201710944259 A CN 201710944259A CN 107908076 B CN107908076 B CN 107908076B
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000001259 photo etching Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 238000001514 detection method Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70183—Zoom systems for adjusting beam diameter
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- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses the vortex light shear interference focus adjustment methods in a kind of regulation photoetching of light field, it realizes constraint exposure using the optical field characteristics of vortex light, realize focusing using the interference pattern of vortex light.The vortex beams for reflecting from substrate surface and transmiting through object lens, carry out shear interference on optical parallel plate.Symmetry is presented when quasi- burnt in interference figure, is asymmetric bifurcated pattern when defocus, and its bifurcated pattern is exactly the opposite under positive and negative out-of-focus appearance, can realize focusing detection using pattern.Focus adjustment method of the invention is simple and compact, vortex beams dual-use material, and interference focusing detection has very high sensitivity, and interference figure is not influenced by light source stability and hot spot uniformity etc..
Description
Technical field
The present invention relates to the focus adjustment methods in a kind of super-resolution laser lithography, specifically, being related to a kind of in light field regulation
Regulation vortex light is used for the method for shear interference focusing simultaneously in super resolution lithography.
Background technique
Light field regulate and control photoetching be a kind of fine lines manufacturing process of novel super-resolution, using constrain light such as vortex light come
Constraint write-in light beam makes lithographic line width much smaller than attainable diffraction limit when being separately written light beam effect.In order to reach more
Thin lines, lithography system would generally use large-numerical aperture object lens, this strongly reduces the depth of focus of lithography system, it is therefore desirable to
Highly sensitive focus unit, and be simple and efficient as far as possible.
In the light field regulation super resolution lithography based on vortex light, the function of vortex light is only the light field to write-in light beam
It is constrained, achievees the effect that super resolution lithography.There has been no carry out light field using the flat plate shear interference figure of vortex light at present
Regulate and control the report of super resolution lithography system focusing.
Summary of the invention
In view of the deficiencies of the prior art, it is an object of the present invention to provide the vortex light shearing in a kind of regulation photoetching of light field is dry
Relate to focus adjustment method.The vortex light is used to focus by the present invention simultaneously, and optical parallel plate is arranged on the reflected light path of vortex light,
Using the shear interference pattern of vortex light, defocus information is extracted, reaches highly sensitive focusing purpose.
The purpose of the present invention is achieved through the following technical solutions: the vortex light shearing in a kind of regulation photoetching of light field
Interfere focus adjustment method, this method comprises the following steps:
(1) light beam and vortex beams are written after bundling device closes beam, successively through beam splitter and object lens, are incident on substrate.
(2) vortex beams transmit after substrate reflection through object lens, and beam splitter reflection is incident on optical parallel plate, and
Shear interference is generated on its surface, then forms interference figure on planar array detector.
(3) if bifurcated striped and left branch bifurcation ostium that interference figure is rendered into pair are upward, right branch bifurcation ostium is downward,
Reduce the distance between substrate and object lens;If the bifurcated striped and left branch bifurcation ostium that interference figure is rendered into pair be downward, right branch
When bifurcation ostium is upward, increase the distance between substrate and object lens;If full symmetric double moon shaped pattern, table is presented in interference figure
The surface of bright substrate is located at the focal point of object lens, realizes the vortex light shear interference focusing in light field regulation photoetching.
The beneficial effects of the present invention are:
1. the present invention no setting is required additional focusing light source simplifies optical system dexterously by vortex light dual-use material.It
Constraint exposure is realized using the optical field characteristics of vortex light, realizes focusing using the interference pattern of vortex light.
2. the present invention is based on interference to focus, there is higher position from defocus sensitivity, be conducive under super resolution lithography background
Small depth of focus focusing detection.The detection method based on energy is compared simultaneously, and interference detects uneven to light-intensity variation, hot spot etc. unwise
Sense.
3. what the present invention utilized is shear interference of the vortex light based on parallel flat, interference figure shape is not put down in parallel
Plate posture influences.And common plane wave shear interference is based on plate wedge, interference figure is influenced by plate wedge posture, i.e.,
Prior Accurate Calibration is needed if for focusing.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention;
Fig. 2 is negative defocus interference pattern;
Fig. 3 is quasi- burnt interference pattern;
Fig. 4 is positive out of focus interference pattern;
In figure: 1. substrates, 2. object lens, 3. beam splitters, 4. vortex beams, 5. bundling devices, 6. write-in light beams, the battle array detection of 7. faces
Device, 8. optical parallel plates.
Specific embodiment
The present invention will be further explained below with reference to the attached drawings.
As shown in Figure 1, the vortex light shear interference focus adjustment method in light field regulation photoetching of the present invention includes the following steps:
1, light beam 6 and vortex beams 4 are written after bundling device 5 closes beam, successively through beam splitter 3 and object lens 2, are incident on substrate
1。
Write-in light beam 6 is laser.Vortex beams 4 can be generated by laser through phase board, spatial light modulator etc..Close beam
Afterwards, light beam 6 is written and vortex beams 4 are overlapped.It is different with the wavelength of vortex beams 4 that light beam 6 is written.
2, vortex beams 4 transmit after the reflection of substrate 1 through object lens 2, and beam splitter 3 reflects, and are incident on optical parallel plate 8
On, and shear interference is generated on its surface, then interference figure is formed on planar array detector 7.
Vortex beams 4, should by object lens 2 and beam splitter 3 directive, one piece of optical parallel plate 8 after 1 surface reflection of substrate
Optical parallel plate 8 reflects the light beam and shear interference occurs, and then forms interference figure on planar array detector 7;When from
Left-right asymmetry bifurcated pair is presented in Jiao Shi, the interference figure, and in positive and negative defocus both direction, the bifurcated direction of bifurcated pair is just
It is good opposite.When quasi- burnt, which is presented full symmetric double moon shaped pattern.
The bifurcated striped and left branch bifurcation ostium that 3, if interference figure is rendered into pair be upward, right branch bifurcation ostium is downward
(as shown in Figure 2) reduces the distance between substrate 1 and object lens 2;If bifurcated striped and left branch bifurcated that interference figure is rendered into pair
When Open Side Down, right branch bifurcation ostium is upward (as shown in Figure 4), increase the distance between substrate 1 and object lens 2;If interference figure
Full symmetric double moon shaped pattern (as shown in Figure 3) is presented, shows that the surface of substrate 1 is located at the focal point of object lens 2, realizes light field
Regulate and control the vortex light shear interference focusing in photoetching.
Substrate 1, object lens 2, bundling device 5, vortex beams 4 and write-in light beam 6 constitute basic light field regulation super-resolution laser
Lithography system.Substrate 1, object lens 2, beam splitter 3, vortex beams 4, optical parallel plate 8 and planar array detector 7 constitute shear interference
Focusing system.Substrate 1 is placed in six axle position moving stage, its angle and position can be arbitrarily adjusted in the six-freedom degree of free space
It sets, should make it vertical with incident vortex beams 4 and write-in light beam 6 before focusing starts.Object lens 2 be it is achromatic, with guarantee
Wavelength and different vortex beams 4 are identical with the write-in focus position of light beam 6.
Defocus pattern shown in Fig. 2-4 can be transferred to computer and carry out subsequent focusing processing, and position from defocus can be based on
Machine vision analysis can also be used in human eye discriminatory analysis.Focusing both may be based on the static focusing of human eye or machine vision, can also
It is based on the dynamic focusing under machine vision and closed loop states.
The numerical aperture of focusing accuracy of the invention and object lens 1 is closely related, for the object lens of high-NA, focusing
Precision can achieve sub-micrometer scale.
Claims (1)
1. the vortex light shear interference focus adjustment method in a kind of light field regulation photoetching, which is characterized in that this method includes following step
It is rapid:
(1), light beam (6) and vortex beams (4) are written after bundling device (5) close beam, successively through beam splitter (3) and object lens (2), enter
It is mapped to substrate (1);
(2), vortex beams (4) transmit after substrate (1) reflection through object lens (2), and optical parallel is incident in beam splitter (3) reflection
On plate (8), and shear interference is generated on its surface, then forms interference figure on planar array detector (7);
(3) if, the bifurcated striped that is rendered into pair of interference figure and when left branch bifurcation ostium is upward, right branch bifurcation ostium is downward, subtract
The distance between small substrate (1) and object lens (2);If bifurcated striped and left branch bifurcation ostium that interference figure is rendered into pair downwards,
When right branch bifurcation ostium is upward, increase the distance between substrate (1) and object lens (2);If full symmetric pair is presented in interference figure
Month shape pattern shows that the surface of substrate (1) is located at the focal point of object lens (2), realizes that the vortex light in light field regulation photoetching is sheared
Interference focusing.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102589853A (en) * | 2012-01-16 | 2012-07-18 | 北京理工大学 | Focal length measuring method of auto-collimating differential confocal lens |
CN103207532A (en) * | 2013-04-21 | 2013-07-17 | 中国科学院光电技术研究所 | Coaxial focus detection measurement system and measurement method thereof |
CN103983198A (en) * | 2014-05-29 | 2014-08-13 | 山东师范大学 | System and method for measuring out-of-plane displacement through vortex light |
CN105509902A (en) * | 2015-12-25 | 2016-04-20 | 华南师范大学 | Interference measurement method and interference measurement system for vortex beam |
CN106814546A (en) * | 2015-11-30 | 2017-06-09 | 上海微电子装备有限公司 | Focal plane detection device, focal plane scaling method and silicon wafer exposure method |
-
2017
- 2017-10-12 CN CN201710944259.5A patent/CN107908076B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102589853A (en) * | 2012-01-16 | 2012-07-18 | 北京理工大学 | Focal length measuring method of auto-collimating differential confocal lens |
CN103207532A (en) * | 2013-04-21 | 2013-07-17 | 中国科学院光电技术研究所 | Coaxial focus detection measurement system and measurement method thereof |
CN103983198A (en) * | 2014-05-29 | 2014-08-13 | 山东师范大学 | System and method for measuring out-of-plane displacement through vortex light |
CN106814546A (en) * | 2015-11-30 | 2017-06-09 | 上海微电子装备有限公司 | Focal plane detection device, focal plane scaling method and silicon wafer exposure method |
CN105509902A (en) * | 2015-12-25 | 2016-04-20 | 华南师范大学 | Interference measurement method and interference measurement system for vortex beam |
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