CN107879635B - Glass frit for preparing solar cell electrode, paste composition comprising same, solar cell electrode and solar cell - Google Patents
Glass frit for preparing solar cell electrode, paste composition comprising same, solar cell electrode and solar cell Download PDFInfo
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- CN107879635B CN107879635B CN201710946774.7A CN201710946774A CN107879635B CN 107879635 B CN107879635 B CN 107879635B CN 201710946774 A CN201710946774 A CN 201710946774A CN 107879635 B CN107879635 B CN 107879635B
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- Prior art keywords
- oxide
- solar cell
- glass frit
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- electrode
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- 239000011521 glass Substances 0.000 title claims abstract description 93
- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 239000000843 powder Substances 0.000 claims abstract description 36
- 239000002245 particle Substances 0.000 claims abstract description 15
- -1 sodium tellurite pentahydrate Chemical class 0.000 claims abstract description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 16
- 239000000654 additive Substances 0.000 claims description 11
- 239000011787 zinc oxide Substances 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000013008 thixotropic agent Substances 0.000 claims description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 4
- 239000012963 UV stabilizer Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 239000002518 antifoaming agent Substances 0.000 claims description 4
- 239000003963 antioxidant agent Substances 0.000 claims description 4
- 230000003078 antioxidant effect Effects 0.000 claims description 4
- 229910052810 boron oxide Inorganic materials 0.000 claims description 4
- 239000007822 coupling agent Substances 0.000 claims description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 4
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical group [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 4
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 4
- 239000000049 pigment Substances 0.000 claims description 4
- 239000004014 plasticizer Substances 0.000 claims description 4
- 239000003381 stabilizer Substances 0.000 claims description 4
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 claims description 4
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 2
- 229910000431 copper oxide Inorganic materials 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 abstract description 15
- 238000005245 sintering Methods 0.000 abstract description 13
- 229910000679 solder Inorganic materials 0.000 abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 11
- 239000000853 adhesive Substances 0.000 abstract description 9
- 230000001070 adhesive effect Effects 0.000 abstract description 9
- 230000009257 reactivity Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 5
- 230000005496 eutectics Effects 0.000 abstract description 4
- 229910004273 TeO3 Inorganic materials 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 239000007791 liquid phase Substances 0.000 abstract description 3
- 229910001415 sodium ion Inorganic materials 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 150000004706 metal oxides Chemical class 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 229910052714 tellurium Inorganic materials 0.000 description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 5
- 239000004135 Bone phosphate Substances 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- 229910003069 TeO2 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VOADVZVYWFSHSM-UHFFFAOYSA-L sodium tellurite Chemical compound [Na+].[Na+].[O-][Te]([O-])=O VOADVZVYWFSHSM-UHFFFAOYSA-L 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- KZVBBTZJMSWGTK-UHFFFAOYSA-N 1-[2-(2-butoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOCCCC KZVBBTZJMSWGTK-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- OHBRHBQMHLEELN-UHFFFAOYSA-N acetic acid;1-butoxybutane Chemical compound CC(O)=O.CCCCOCCCC OHBRHBQMHLEELN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007603 infrared drying Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(II,IV) oxide Inorganic materials O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 229940032007 methylethyl ketone Drugs 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- 229940116411 terpineol Drugs 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses glass powder for preparing a solar cell electrode, a paste composition comprising the glass powder, the solar cell electrode and a solar cell. Wherein the glass powder comprises sodium tellurite pentahydrate and lead tetraoxide. The glass powder contains the lead tetroxide-sodium tellurite, has higher eutectic point and can provide a certain space for controlling the reactivity of the glass powder and the silicon nitride. Na (Na)2TeO3The compound Na element in (1) can also form Ag-Na ion complex, and can promote the liquid phase sintering of Ag particles in the sintering process. Therefore, the trilead-sodium tellurite glass composition can provide stable reactivity with silicon nitride and provide a solar cell with excellent and stable contact resistance. The solar cell electrode, and the solder ribbon prepared using the paste composition of the present invention have excellent adhesive strength and minimize series resistance (Rs), thereby providing high conversion efficiency.
Description
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to glass powder for preparing a solar cell electrode, a paste composition comprising the glass powder, the solar cell electrode and a solar cell.
Background
Solar cells generate electrical energy by converting photons of sunlight through a p-n junction using the photovoltaic effect. In a solar cell, front and rear electrodes are formed on upper and lower surfaces of a semiconductor wafer or substrate having a p-n junction, respectively. Then, the photoelectric effect of the p-n junction is induced by solar light entering the semiconductor wafer, and electrons generated by the photoelectric effect of the p-n junction supply current to the outside through the electrodes. The composition for an electrode is disposed on a wafer, and is patterned and baked to form an electrode of a solar cell.
Increasing the efficiency of solar cells by continuously reducing the emitter thickness may instead lead to shunting, which will deteriorate the performance of the solar cell. In addition, solar cells have gradually increased in area to improve efficiency. However, in this case, there may be a problem of efficiency degradation due to an increase in contact resistance of the solar cell.
The anti-reflection layer on the top of the solar cell is a layer of silicon nitride, and the front electrode of the solar cell needs a glass powder component to etch the layer of silicon nitride so as to conduct current generated by the lower emitter. The solar cells are connected to each other by solder ribbons to constitute a solar cell module. Tellurium glass has the characteristics of low melting point, high durability, easy dissolution of silver in solid solution and the like, and can be used for glass for fluorescent display tube sealing applications (Japanese patent laid-open No. 10-029834A) and optical fiber material applications (Japanese patent laid-open No. 2007-008802A). However, tellurium glass has very low reactivity with silicon oxide, which makes it insufficient for etching silicon nitride. PbO can lower the softening point of the glass and enable the glass frit composition to melt at low temperatures. The PbO can form a low eutectic point with silicon nitride and has PbO-TeO2The glass powder of the composition has high reactivity with silicon nitride. At present, the adhesion of solar cell electrodes made of ingredients including typical lead-containing glass frit to solder ribbons is insufficient, and low adhesion between the electrodes and the solder ribbons results in high series resistance and deterioration of conversion efficiency.
Disclosure of Invention
The invention aims to provide glass powder for preparing a solar cell electrode, a paste composition comprising the glass powder, the solar cell electrode and a solar cell, and aims to solve the technical problems that in the prior art, the adhesion between the solar cell electrode and a solder strip is insufficient, and the low adhesion between the electrode and the solder strip causes the deterioration of high series resistance and conversion efficiency.
In order to achieve the above object, according to one aspect of the present invention, there is provided a glass frit for use in the preparation of an electrode of a solar cell. The glass powder comprises sodium tellurite pentahydrate and lead tetraoxide.
Further, the glass frit contains 15 to 85wt% of sodium tellurite pentahydrate and 15 to 85wt% of lead tetraoxide.
Further, the glass frit further comprises 0.1 wt% to 5wt% of a group I oxide; preferably, the group I metal oxide is selected from Li2O、Na2O and K2O, or a combination thereof.
Further, the glass frit further comprises 0.1 wt% to 5wt% of a group II oxide; preferably, the group II oxide is one or more selected from the group consisting of MgO, CaO, SrO, and BaO.
Further, the glass frit further comprises 0.1 wt% to 20wt% of a transition metal oxide; preferably, the transition metal oxide is one or more selected from the group consisting of titanium oxide, vanadium oxide, manganese oxide, iron oxide, cobalt oxide, nickel oxide, copper oxide, zirconium oxide, molybdenum oxide, ruthenium oxide, tungsten oxide, and zinc oxide.
Further, the glass frit contains 1 to 15 wt% of ZnO.
Further, the glass frit may further contain other oxide selected from one or more of the group consisting of phosphorus oxide, boron oxide and silicon oxide.
Further, the total amount of the group I oxide, the group II oxide, the transition metal oxide and other oxides added to the glass frit is 1 to 25 wt%.
Further, the average particle diameter D50 of the glass frit is 0.1 to 10 μm.
According to another aspect of the present invention, there is provided a paste composition for preparing an electrode of a solar cell. The paste composition comprises 60-95 wt% of conductive powder, 1.0-20 wt% of organic vehicle, 0.1-5 wt% of the glass powder and the balance of additives.
Further, the additive is one or more selected from the group consisting of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an antifoaming agent, a pigment, a UV stabilizer, an antioxidant, and a coupling agent.
Further, the conductive powder is silver powder.
According to yet another aspect of the present invention, a solar cell electrode is provided. The solar cell is prepared from any one of the paste compositions described above.
According to yet another aspect of the present invention, there is provided a solar cell including an electrode. The electrode is a solar cell electrode prepared from the paste composition of the present invention.
The glass powder contains the lead tetroxide-sodium tellurite, has higher eutectic point and can provide a certain space for controlling the reactivity of the glass powder and the silicon nitride. Na (Na)2TeO3The compound Na element in (1) can also form Ag-Na ion complex, and can promote the liquid phase sintering of Ag particles in the sintering process. Therefore, the trilead-sodium tellurite glass composition can provide stable reactivity with silicon nitride and provide a solar cell with excellent and stable contact resistance. The paste composition of the present invention, which can reduce the adverse effect of high surface resistance on p-n junction while reducing contact resistance, thereby improving solar cell efficiency and improving the chemical properties of electrodes made therefrom; the paste composition of the present invention produces a solar cell electrode, and solder ribbon, having excellent adhesive strength and minimizing series resistance (Rs), thereby providing high conversion efficiency.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 shows a schematic view of a solar cell manufactured using the paste composition according to an embodiment of the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
According to an exemplary embodiment of the present invention, a glass frit for use in the preparation of electrodes for solar cells is provided. The glass powder comprises sodium tellurite pentahydrate and lead tetraoxide.
The glass powder contains the lead tetroxide-sodium tellurite, has higher eutectic point and can provide a certain space for controlling the reactivity of the glass powder and the silicon nitride. Na (Na)2TeO3The compound Na element in (1) can also form Ag-Na ion complex, and can promote the liquid phase sintering of Ag particles in the sintering process. Therefore, the trilead-sodium tellurite glass composition can provide stable reactivity with silicon nitride and provide a solar cell with excellent and stable contact resistance. The solar cell electrode, and the solder ribbon prepared using the paste composition of the present invention have excellent adhesive strength and minimize series resistance (Rs), thereby providing high conversion efficiency. Preferably, the glass frit comprises 15 to 85wt% of sodium tellurite pentahydrate and 15 to 85wt% of lead tetraoxide. The sodium tellurite pentahydrate and the lead tetraoxide are in the proportion range, so that the properties of the glass powder can reach an optimized state.
In order to improve the properties of the glass frit, it is preferable that the glass frit further contains 0.1 to 5wt% of a group I oxide; more preferably, the group I metal oxide is selected from the group consisting of Li2O、Na2O and K2O, or a combination thereof. The group I oxide has the function of reducing the contact resistance as an electron provider, and in the content range, the slurry containing the glass powder can be well combined with a standard matrix (such as alumina and the like), the structure is compact, and the glass powder has excellent electric conduction resistance.
In order to further improve the properties of the glass frit, the glass frit further comprises a group II oxide, which can reduce the viscosity of the paste at high temperature without lowering the strain point, and preferably, the group II oxide is contained in an amount of 0.1 to 5 wt%; when the content of the group II metal oxideWhen sufficient, the content is easy to inhibit alkali component, especially Na2And (4) diffusion of O. However, when the content of the group II metal oxide is too large, the resistance to denitrification is liable to deteriorate, and the material cost significantly increases. On the other hand, when the content of the group II metal oxide is too small, the viscosity at high temperature may excessively increase. For example, MgO is a component that lowers the viscosity at high temperatures to improve the meltability and formability. In addition, MgO has an excellent effect of preventing glass plates from being easily broken in alkaline earth metal oxides. More preferably, the group II oxide is one or more selected from the group consisting of MgO, CaO, SrO, and BaO.
In order to further improve the properties of the glass frit, it is preferable that the glass frit further contains 0.1 to 20wt% of a transition metal oxide; more preferably, the transition metal oxide is selected from the group consisting of TiO2、V2O5、MnO、Fe2O3、CoO、NiO、 CuO、ZrO、MoO3、RuO、WO3And ZnO. Further preferably, the glass frit further comprises 1 wt% to 15 wt% of ZnO. Generally, transition metal oxides have different effects on the glass component. For example, in tellurium glasses, tungsten oxide and molybdenum oxide are one of the constituents that contribute to the formation of a glass network in addition to tellurium oxide, which contributes to the expansion of the vitrification range of the tellurium glass and stabilizes the glass.
According to a typical embodiment of the invention, the glass frit further comprises other oxides, which are oxides other than lead tetraoxide, group I metal oxides, group II metal oxides and transition metal oxides; preferably, the other oxide is one or more selected from the group consisting of phosphorus oxide, boron oxide and silicon oxide.
Preferably, the total amount of group I oxide, group II oxide, transition metal oxide and other oxides added to the glass frit is 1 to 25 wt%.
According to an exemplary embodiment of the present invention, a paste composition for preparing an electrode of a solar cell is provided. The paste composition comprises 60-95 wt% of conductive powder, 1.0-20 wt% of organic vehicle, 0.1-5 wt% of the glass powder and the balance of additives. Wherein the additive is one or more selected from the group consisting of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an antifoaming agent, a pigment, a UV stabilizer, an antioxidant, and a coupling agent.
According to an exemplary embodiment of the present invention, a solar cell electrode is provided. The solar cell is prepared from any one of the paste compositions described above.
According to an exemplary embodiment of the present invention, a solar cell is provided, including an electrode. The electrode is a solar cell electrode prepared from the paste composition of the present invention.
According to an exemplary embodiment of the present invention, a solar cell electrode composition includes silver powder, sodium tellurite-triglycine tetraoxide-based glass frit, and an organic vehicle. Now, the composition of the solar cell electrode of the present invention will be described in more detail.
(A) Silver powder
According to one exemplary embodiment of the present invention, the paste composition for preparing the solar cell electrode includes silver powder as the conductive powder. The particle size of the silver powder may be in the nanometer or micrometer range. For example, the silver powder may have a particle size of several tens to several hundreds of nanometers, or several to several tens of micrometers. Alternatively, the silver powder may be a mixture of two or more silver powders having different particle diameters.
The silver powder may have a spherical, flake, or amorphous shape.
The silver powder preferably has an average particle diameter (D50) of about 0.1 μm to about 10 μm, more preferably an average particle diameter (D50) of about 0.5 μm to about 5 μm. The average particle size can be measured using an instrument such as Mastersize 2000(Malvern co., Ltd.) after dispersing the conductive powder in isopropyl alcohol (IPA) by ultrasonic waves at 25 ℃ for 3 minutes. Within this average particle size range, the composition can provide low contact resistance and low line resistance.
The silver powder can be present in an amount of about 60 wt% to about 95wt%, based on the total weight of the composition. Within this range, the conductive powder can prevent the deterioration of the conversion efficiency due to the increase in resistance. More preferably, the conductive powder is present in an amount of about 70 wt% to about 95 wt%.
(B) Sodium tellurite-tetraoxide tribasic lead-based glass powder
The glass frit serves to enhance adhesion between the conductive powder and the wafer or the substrate, and to reduce contact resistance by forming silver grains in the emitter region by etching the anti-reflection layer and melting the silver powder during sintering of the conductive paste. In addition, during the sintering process, the glass frit softens and lowers the sintering temperature.
When the area of the solar cell is increased in order to improve the efficiency of the solar cell, there may be a problem in that the contact resistance of the solar cell is increased. Therefore, there is a need to minimize the series resistance (Rs) and the effect on the p-n junction. In addition, as the suitable sintering temperature varies over a wide range using various wafers having different surface resistances, the glass frit needs to ensure sufficient thermal stability to withstand a large sintering temperature window.
The solar cells are connected to each other by solder ribbons to constitute a solar cell module. In this case, the low adhesive strength between the solar cell electrode and the solder ribbon may cause detachment of the cell or decrease reliability. In the present invention, sodium tellurite-triglycine oxide-based glass frit is used in order to ensure that the solar cell has desired electrical and physical properties such as adhesive strength.
In the present invention, the sodium tellurite-tribasic lead oxide-based glass frit may contain 15 to 85wt% of sodium tellurite pentahydrate and 15 to 85wt% of tribasic lead oxide, and preferably, the glass frit further contains 0.1 to 5wt% of a group I oxide; more preferably, the group I metal oxide is selected from the group consisting of Li2O、Na2O and K2One or more of the group consisting of O; preferably, the glass frit further comprises 0.1 wt% to 5wt% of a group II oxide; more preferably, the group II oxide is one or more selected from the group consisting of MgO, CaO, SrO, and BaO; preferably, the glass frit further comprises 0.1 wt% to 20wt% of a transition metal oxide; more preferably, the transition metal oxide is selected from the group consisting of TiO2、V2O5、MnO、Fe2O3、CoO、 NiO、CuO、ZrO、MoO3、RuO、WO3And ZnO; particularly preferably, the transition metal oxide is 1 to 15 wt% ZnO. In addition, the glass frit may further contain other oxides, which means oxides other than lead tetraoxide, group I metal oxide, group II metal oxide, and transition metal oxide; preferably, the other oxide is one or more selected from the group consisting of phosphorus oxide, boron oxide and silicon oxide. The total amount of the group I oxide, the group II oxide, the transition metal oxide and other oxides added to the glass frit is 1 to 25 wt%. Within this range, the glass frit can ensure excellent adhesive strength and excellent conversion efficiency.
The glass frit may be prepared from sodium tellurite pentahydrate, lead tetraoxide, etc. by any typical method. For example, sodium tellurite pentahydrate and other oxides are mixed in certain proportions. The mixing may be performed using a ball mill or a planetary mill. The mixed composition is melted at about 900 ℃ to about 1400 ℃ and then quenched to about 25 ℃. The resultant material is pulverized using a disk mill, a planetary mill, or the like, thereby providing glass frit.
The average particle size D50 of the glass frit may be from about 0.1 μm to about 10 μm and is present in an amount of from about 0.1 wt% to about 5wt% based on the total amount of the composition. The glass frit may have a spherical or amorphous shape.
(C) Organic vehicle
The organic vehicle imparts the appropriate viscosity and rheological characteristics required for the conductive paste printing process by mechanical mixing with the inorganic components in the solar cell electrode.
The organic vehicle may be any typical organic vehicle used in a solar cell electrode composition, and may include a binder resin, a solvent, and the like.
The binder resin may be selected from acrylate resins or cellulose resins. Ethyl cellulose is generally used as the binder resin. Further, the binder resin may be selected from ethyl hydroxyethyl cellulose, nitrocellulose, a blend of ethyl cellulose and phenolic resin, alkyd resin, phenol, acrylate, xylene, polybutene, polyester, urea, melamine, vinyl acetate resin, wood rosin, polymethacrylate of alcohol, and the like.
The solvent may be selected from, for example, hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether), butyl carbitol acetate (monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol, methyl ethyl ketone, benzyl alcohol, gamma-butyrolactone, ethyl lactate, and combinations thereof.
The organic vehicle can be present in an amount of about 1 wt% to about 20wt%, based on the total weight of the composition. Within this range, the organic vehicle may provide sufficient adhesive strength and excellent printability to the composition.
(D) Additive agent
The composition may further include typical additives to enhance flow properties, processability and stability, as desired. The additives may include, but are not limited to, a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an antifoaming agent, a pigment, a UV stabilizer, an antioxidant, a coupling agent, and the like. These additives may be used alone or as a mixture thereof. These additives may be present in an amount of about 0.1 wt% to about 5wt% of the composition, but the amount may vary as desired.
According to a typical embodiment of the present invention, a solar cell manufactured using the paste composition. As shown in fig. 1, the back surface electrode 210 and the front surface electrode 230 may be formed by printing a cell electrode composition on a wafer or substrate 100 including a p layer 101 and an n layer 102 serving as an emitter, and sintering. For example, a preliminary process for preparing the back electrode is performed by printing the composition on the back surface of the wafer and drying the printed composition at about 200 to about 400 ℃ for about 10 to 60 seconds. In addition, a preliminary process for preparing the front electrode may be performed by printing the slurry on the front surface of the wafer and drying the printed composition. The front and back electrodes may then be formed by sintering the wafer at about 400 ℃ to about 950 ℃, preferably about 850 ℃ to about 950 ℃, for about 30 seconds to 50 seconds.
Next, the present invention will be described in more detail by referring to examples. It should be noted, however, that these examples are provided only for illustrating the present invention and should not be construed as limiting the present invention in any way.
Detailed descriptions that are clear to those skilled in the art are omitted for the sake of clarity.
Examples and comparative examples
The oxides were mixed according to the composition shown in Table 1, and melted and sintered at 900 to 1400 ℃ to prepare sodium tellurite-triglycine tetraoxide-based glass frit having an average particle diameter (D50) of 2.0. mu.m.
As an organic binder, 1.0 wt% of ethyl cellulose was sufficiently dissolved in 9.0 wt% of butyl carbitol at 60 ℃, and a solution including 87.5 wt% of spherical silver powder having an average particle size of 1.5 μm, 2.0 wt% of the prepared sodium tellurite and tribasic glass powder and 0.5 wt% of thixotropic agent Thixatrol ST was added to the binder, followed by grinding in a three-roll machine, thereby preparing a solar cell electrode composition.
The electrode composition prepared as above was deposited on the front surface of a single crystal silicon wafer in a predetermined pattern by screen printing, followed by drying in an infrared drying oven. The composition used to prepare the back aluminum electrode was then printed on the back side of the wafer and dried in the same manner. The battery piece treated in the above procedure was fired at 910 ℃ for 40 seconds in a belt furnace. The conversion efficiency (%) of the cell, the series resistance Rs (m Ω), the open-circuit voltage (Voc), and the like were measured using a solar energy efficiency tester (PSS10, BERGER). Then, the electrode of the battery is soldered to the solder ribbon with solder at 300 to 400 ℃ using a soldering iron. Then, the adhesive strength (N/mm) of the battery electrode to the solder ribbon was measured using a tensile tester at a peel angle of 180 ° and a tensile rate of 50 mm/min. The measured conversion efficiency and tensile force tests are shown in table 1.
Examples 1 to 12 and comparative examples 1 to 16
Examples 1 to 12 and comparative examples 1 to 16 compositions for solar cell electrodes were prepared in the same manner using the compositions of glass frit as shown in table 1, and physical properties were evaluated. It should be noted that the examples and comparative examples in Table 1 are intended to highlight one or more of the features of the inventive examples, and are not intended to limit the scope of the invention, nor are they intended to illustrate comparative examples outside the scope of the invention. Furthermore, the inventive subject matter is not limited to the specific details described in the examples and comparative examples.
TABLE 1
As shown in table 1, the solar cell electrodes manufactured using the compositions prepared in examples 1 to 12 using sodium tellurite pentahydrate, lead tetraoxide, and the like, and having the component compositions within the preferable ranges of the present invention, exhibited high adhesive strength and excellent conversion efficiency. The compositions used in comparative examples 1 to 2 also contained sodium tellurite pentahydrate and lead tetraoxide, but the component ratios were not in the most preferable ranges, although only PbO and TeO were used in comparison with the other examples2The composition of (a) has better effect, and the conversion rate and the tensile force of the solar cell electrode prepared by the composition are reduced compared with those of the above examples. Comparative examples 3 to 5 use PbO and TeO2Replacing sodium tellurite and Pb in the invention3O4Showing very low pull and efficiency. Even if PbO or TeO is used as in comparative examples 6 to 72One of them substituted sodium tellurite pentahydrate or Pb in the examples of the present invention, respectively3O4The electrodes prepared likewise do not have good electrical properties. TeO is adopted in comparative examples 8 to 102、Na2O and PbO to replace sodium tellurite and Pb3O4The prepared electrode has poor performance. Comparative examples 11 to 16 contain PbO and TeO2And group I elements or group II elements, but the electrical properties and tensile force are not good.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. Glass frit for preparing electrodes of solar cells, characterized in that it comprises 15 to 85% by weight of sodium tellurite pentahydrate and 15 to 85% by weight of lead tetraoxide; the glass frit further comprises 0.1 wt% to 5wt% of a group I oxide; the glass frit further comprises 0.1 wt% to 5wt% of a group II oxide; the glass frit further comprises 0.1 wt% to 20wt% of a transition metal oxide; the group I oxide is selected from Li2O、Na2O and K2One or more of the group consisting of O; the group II oxide is one or more selected from the group consisting of MgO, CaO, SrO and BaO; the transition metal oxide is one or more selected from the group consisting of titanium oxide, vanadium oxide, manganese oxide, iron oxide, cobalt oxide, nickel oxide, copper oxide, zirconium oxide, molybdenum oxide, ruthenium oxide, tungsten oxide, and zinc oxide; the sum of the weight percentages of the components contained in the glass powder is 100 percent.
2. The glass frit according to claim 1, wherein the glass frit further comprises 1 wt% to 15 wt% of ZnO.
3. The glass frit according to claim 1 or 2, wherein the glass frit further comprises other oxide selected from one or more of the group consisting of phosphorus oxide, boron oxide and silicon oxide.
4. The glass frit according to claim 3, wherein the total amount of the group I oxide, the group II oxide, the transition metal oxide and the other oxide added to the glass frit is 1 to 25 wt%.
5. The glass frit according to claim 1 or 2, wherein the average particle diameter D50 of the glass frit is 0.1 to 10 μm.
6. A paste composition for preparing a solar cell electrode, comprising 60 to 95wt% of a conductive powder, 1.0 to 20wt% of an organic vehicle, 0.1 to 5wt% of the glass frit according to any one of claims 1 to 5, and the balance of additives.
7. The paste composition of claim 6, wherein the additive is one or more selected from the group consisting of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an antifoaming agent, a pigment, a UV stabilizer, an antioxidant, and a coupling agent.
8. The paste composition of claim 6, wherein the conductive powder is silver powder.
9. A solar cell electrode prepared from the paste composition according to any one of claims 6 to 8.
10. A solar cell comprising an electrode, wherein the electrode is the solar cell electrode of claim 9.
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| KR100772501B1 (en) * | 2005-06-30 | 2007-11-01 | 한국전자통신연구원 | Tellurite glass composite, optical waveguide and optical amplifier using the same |
| EP2637216B1 (en) * | 2008-08-07 | 2014-12-17 | Kyoto Elex Co., Ltd. | Conductive paste for formation of a solar cell element electrode, solar cell element, and manufacturing method for said solar cell element |
| KR101246686B1 (en) * | 2010-03-19 | 2013-03-21 | 제일모직주식회사 | Paste for forming electrode of solar cell and solar cell with the same |
| KR20130064659A (en) * | 2011-12-08 | 2013-06-18 | 제일모직주식회사 | Electrode paste composition for solar cell and electrode prepared using the same |
| US20130183795A1 (en) * | 2012-01-16 | 2013-07-18 | E I Du Pont De Nemours And Company | Solar cell back side electrode |
| EP2654085B1 (en) * | 2012-04-17 | 2017-08-23 | Heraeus Precious Metals North America Conshohocken LLC | Inorganic reaction system for electroconductive paste composition |
| US9087937B2 (en) * | 2012-05-10 | 2015-07-21 | E I Du Pont De Nemours And Company | Glass composition and its use in conductive silver paste |
| JP5690780B2 (en) * | 2012-07-18 | 2015-03-25 | 株式会社ノリタケカンパニーリミテド | Ag electrode forming paste composition, method for producing the same, and solar cell |
| KR20140022511A (en) * | 2012-08-13 | 2014-02-25 | 제일모직주식회사 | Electrode paste for solar cell, electrode prepared from the same and solar cell comprising the same |
| TWI532062B (en) * | 2015-04-27 | 2016-05-01 | Giga Solar Materials Corp | Conductive pulp and a method of manufacturing the same |
| CN106328246A (en) * | 2015-06-19 | 2017-01-11 | 江苏正能电子科技有限公司 | Positive silver paste for crystalline silicon solar cell |
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