CN107873084A

CN107873084A - Dynamic property tester and dynamic characteristic test method

Info

Publication number: CN107873084A
Application number: CN201680008073.2A
Authority: CN
Inventors: 坂本阳; 坂本阳一; 泷田伸幸
Original assignee: Sintokogio Ltd
Current assignee: Sintokogio Ltd
Priority date: 2015-05-28
Filing date: 2016-03-14
Publication date: 2018-04-03
Anticipated expiration: 2036-03-14
Also published as: JP2016223833A; CN107873084B; WO2016189930A1; TWI676038B; TW201641947A; JP6477257B2

Abstract

Dynamic property tester possesses：Power supply；Reactor；With electrically connect in series the 1st, the 2nd switch portion, the 3rd diode electrically connected in parallel with the 1st switch portion, the 4th diode electrically connected in parallel with the 2nd switch portion, and for selecting the selection circuit of object that the 1st semiconductor or the 2nd semiconductor determine as switch；Switch the 3rd switch portion of supply and the cut-out from power supply to the 1st semiconductor or the electric current of the 2nd semiconductor；And the on-state of each switch portion of switching control and the control device of off-state.1st connecting portion of the 1st, the 2nd semi-conductor electricity connection and the 2nd connecting portion for electrically connecting the 1st, the 2nd switch portion are electrically connected via reactor.Control device is turned on the 2nd, the 3rd switch portion when starting the switch measure of the 1st semiconductor, after the end determined according to the switch of the 1st semiconductor makes the 2nd switch portion turn into off-state, the 3rd switch portion is turned into off-state.

Description

Dynamic property tester and dynamic characteristic test method

Technical field

This disclosure relates to dynamic property tester and dynamic characteristic test method.

Background technology

In the past, as insulated gate bipolar transistor (IGBT：Insulated Gate Bipolar Transistor) etc. The inspection of power semiconductor modular, carry out dynamic characteristic (AC：Alternating Current) experiment.For example, patent document 1 Described experimental rig is charged using high voltage power supply to capacitor, and in the state of being charged to capacitor Carry out switch measure.

Patent document 1：Japanese Unexamined Patent Publication 2013-160572 publications

In conventional experimental rig, because the energy accumulated in capacitor is consumed in dynamic characteristic test circuit, So it is required for charging to capacitor using high voltage power supply whenever switch measure is carried out.Therefore, it is special whenever entering Mobile state Property experiment when, electricity usage amount increase.

In the art, it is desirable to the reduction of the electricity usage amount in dynamic characteristic test.

The content of the invention

The dynamic property tester of the one side of the disclosure is carried out by the dynamic of the dynamic characteristic test of testing equipment Characteristic test apparatus, it is above-mentioned that the 1st semiconductor electrically connected in series and the 2nd semiconductor are included, with simultaneously by testing equipment The 1st diode that the mode of connection is connected with the 1st semi-conductor electricity and be connected in parallel with the 2nd semi-conductor electricity the 2nd two Pole pipe.The dynamic property tester possesses：The power supply that can be charged, supply the electric current for dynamic characteristic test；Reactor, As the load of the 1st semiconductor and the 2nd semiconductor；Selection circuit, have the 1st switch portion that electrically connects in series and 2nd switch portion, the 3rd diode electrically connected in parallel with the 1st switch portion and in parallel with the 2nd switch portion 4th diode of electrical connection, for selecting any one pair determined as switch in the 1st semiconductor and the 2nd semiconductor As；3rd switch portion, switch supply and cut-out from power supply to the 1st semiconductor or the electric current of the 2nd semiconductor；And control Device, control is switched over to the on-state and off-state of the 1st switch portion, the 2nd switch portion and the 3rd switch portion.Will 1st connecting portion of the 1st semiconductor and the connection of the 2nd semi-conductor electricity and the 1st switch portion and the 2nd switch portion are electrically connected the 2nd Connecting portion electrically connects via reactor.The positive terminal of power supply is electrically connected with the negative electrode of the 1st diode and the negative electrode of the 3rd diode Connect, the negative terminal of power supply electrically connects with the anode of the 2nd diode and the anode of the 4th diode.Control device is starting the 1st The 2nd switch portion and the 3rd switch portion are turned on during the switch measure of semiconductor, in the switch according to the 1st semiconductor Measure terminates this case and makes the 2nd switch portion the 3rd switch portion is turned into off-state as after off-state.

According to the dynamic property tester, when starting the switch measure of the 1st semiconductor, make the 2nd switch portion and the 3rd Switch portion is turned on, and is turned into the 2nd switch portion terminating this case according to the switch of the 1st semiconductor measure and is disconnected After state, the 3rd switch portion is set to turn into off-state.In the switch measure of the 1st semiconductor, supplied from power supply to the 1st semiconductor 2nd connecting portion stream of the electric current from the 1st connecting portion of the 1st semiconductor and the 2nd semiconductor towards the 1st switch portion and the 2nd switch portion Reactor is crossed, at the time of the switch of the 1st semiconductor determines end, being accumulated in reactor has energy.Therefore, by according to The switch measure of 1 semiconductor terminates this case and the 2nd switch portion is turned into off-state, is formed and led to from the negative terminal of power supply The current path that the 2nd diode, reactor, the 3rd diode and the 3rd switch portion return to the positive terminal of power supply is crossed, is accumulated In reactor energy as electric current flow into power supply positive terminal.Thereby, it is possible to the institute in the switch of the 1st semiconductor measure A part for the energy (electric power) of the power supply used is reclaimed.As a result, the electric power in dynamic characteristic test can be reduced Usage amount.In addition, in this manual, so-called " electrical connection " is more than the situation that 2 key elements of connecting object are directly connected to, It is also included within the situation that the other element that can be electrically connected is connected between 2 key elements of connecting object., can as other element Include switch portion such as relay and transistor etc..

Control device can also turn into the 1st switch portion and the 3rd switch portion when starting the switch measure of the 2nd semiconductor On-state, after the 1st switch portion is turned into off-state this case that being terminated according to the switch of the 2nd semiconductor measure, make 3rd switch portion turns into off-state.In this case, in the switch measure of the 2nd semiconductor, supply to the 2nd half and lead from power supply 1st connecting portion of the electric current of body from the 2nd connecting portion of the 1st switch portion and the 2nd switch portion towards the 1st semiconductor and the 2nd semiconductor Reactor is flowed through, at the time of the switch of the 2nd semiconductor determines end, being accumulated in reactor has energy.Therefore, basis is passed through The switch measure of 2nd semiconductor terminates this case and the 1st switch portion is turned into off-state, forms the negative terminal from power supply The current path of the positive terminal of power supply is returned to by the 4th diode, reactor, the 1st diode and the 3rd switch portion, is stored The long-pending energy in reactor flows into the positive terminal of power supply as electric current.Thereby, it is possible to in the switch of the 2nd semiconductor measure A part for the energy (electric power) of used power supply is reclaimed.As a result, it can further reduce dynamic characteristic test In electricity usage amount.

1st switch portion and the 2nd switch portion can also be transistors.In this case, the 1st switch can be switched at high speed Portion and the on-state and off-state of the 2nd switch portion, it is possible to increase switch the precision of measure.

The dynamic characteristic test method of another other side of the disclosure is carried out by the dynamic characteristic test of testing equipment Dynamic characteristic test method, it is above-mentioned to be included the 1st semiconductor that electrically connects in series and the 2nd half led by testing equipment Body, the 1st diode being connected in parallel with the 1st semi-conductor electricity and it is connected in parallel with the 2nd semi-conductor electricity The 2nd diode.The dynamic characteristic test method includes：By making with the 1st switch portion that electrically connects in series and 2nd switch portion, the 3rd diode electrically connected in parallel with the 1st switch portion and in parallel with the 2nd switch portion 2nd switch portion of the selection circuit of the 4th diode of electrical connection is turned on, to select the 1st semiconductor to be surveyed as switch Fixed object, and by being turned on the 3rd switch portion of the power electric connection with that can charge in series, Electric current is supplied to the 1st semiconductor, to carry out the step of switch of the 1st semiconductor determines；By being surveyed according to the switch of the 1st semiconductor Fixed end, and the 2nd switch portion is turned into off-state, to enter to the energy used in the switch measure of the 1st semiconductor The step of row recovery；And after the step of being reclaimed to the energy used in the switch measure of the 1st semiconductor, make the 3 switch portions turn into the step of off-state.The 1st connecting portion that 1st semiconductor and the 2nd semi-conductor electricity are connected and the 1st is opened 2nd connecting portion of pass portion and the electrical connection of the 2nd switch portion electrically connects via reactor.The positive terminal of power supply and the 1st diode Negative electrode and the 3rd diode negative electrode electrical connection, the anode and the 4th diode of the negative terminal of power supply and the 2nd diode Anode electrical connection.

According to the dynamic characteristic test method, make the 2nd switch portion and the 3rd when starting the switch measure of the 1st semiconductor Switch portion is turned on, and is turned into the 2nd switch portion terminating this case according to the switch of the 1st semiconductor measure and is disconnected After state, the 3rd switch portion is set to turn into off-state.In the switch measure of the 1st semiconductor, supplied from power supply to the 1st semiconductor 2nd connection of the electric current from the 1st connecting portion of the 1st semiconductor and the 2nd semiconductor towards the 1st switch portion and the 2nd switch portion Reactor is flowed through in portion, and at the time of the switch of the 1st semiconductor determines end, being accumulated in reactor has energy.Therefore, root is passed through Terminate this case according to the switch measure of the 1st semiconductor and the 2nd switch portion is turned into off-state, form the negative pole end from power supply Son returns to the current path of the positive terminal of power supply by the 2nd diode, reactor, the 3rd diode and the 3rd switch portion, Accumulate the positive terminal that the energy in reactor flows into power supply as electric current.Thereby, it is possible to the switch measure in the 1st semiconductor Used in the part of energy (electric power) of power supply reclaimed.As a result, it can reduce in dynamic characteristic test Electricity usage amount.

Another otherwise dynamic characteristic test method of the disclosure can also be included also：By make selection circuit 1 switch portion is turned on, to select object of the 2nd semiconductor as switch measure, and by turning into the 3rd switch portion On-state, electric current is supplied to the 2nd semiconductor, to carry out the step of switch of the 2nd semiconductor determines；By being led according to the 2nd half The end of the switch measure of body, and the 1st switch portion is turned into off-state, come to being made in the switch of the 2nd semiconductor measure The step of energy is reclaimed；And to switching what the energy used in determining was reclaimed in the 2nd semiconductor After step, the step of making the 3rd switch portion turn into off-state.In this case, in the switch measure of the 2nd semiconductor, from electricity Source is supplied to the electric current of the 2nd semiconductor from the 2nd connecting portion of the 1st switch portion and the 2nd switch portion towards the 1st semiconductor and the 1st connecting portion of 2 semiconductors flows through reactor, and at the time of the switch of the 2nd semiconductor determines end, being accumulated in reactor has Energy.Therefore, by terminating this case according to the switch of the 2nd semiconductor measure to make the 1st switch portion turn into off-state, shape The positive pole of power supply is returned to by the 4th diode, reactor, the 1st diode and the 3rd switch portion into the negative terminal from power supply The current path of terminal, accumulate the positive terminal that the energy in reactor flows into power supply as electric current.Thereby, it is possible to the 2nd A part for the energy (electric power) of power supply used in the switch measure of semiconductor is reclaimed.As a result, one can be entered Step reduces the electricity usage amount in dynamic characteristic test.

According to the disclosure, the electricity usage amount in dynamic characteristic test can be reduced.

Brief description of the drawings

Fig. 1 is the circuit diagram for the dynamic property tester for schematically showing an embodiment.

Fig. 2 is the timing diagram of the N sides switch measure in Fig. 1 dynamic property tester.

The figure of current path when Fig. 3 is the switch connection in the N sides switch measure for represent Fig. 2.

Fig. 4 is the figure of current path when switching off in the N sides switch measure for represent Fig. 2.

The figure of current path when Fig. 5 is the energy regenerating in the N sides switch measure for represent Fig. 2.

Fig. 6 is the timing diagram of the P sides switch measure in Fig. 1 dynamic property tester.

The figure of current path when Fig. 7 is the switch connection in the P sides switch measure for represent Fig. 6.

Fig. 8 is the figure of current path when switching off in the P sides switch measure for represent Fig. 6.

The figure of current path when Fig. 9 is the energy regenerating in the P sides switch measure for represent Fig. 6.

Figure 10 is the timing diagram of the N sides switch measure of comparative example.

Figure 11 is the timing diagram of the P sides switch measure of comparative example.

Figure 12 is the sequential for the N sides switch measure that the overcurrent in the dynamic property tester comprising Fig. 1 prevents processing Figure.

Figure 13 is the figure of the current path when overcurrent in the N sides switch measure for represent Figure 12 prevents from handling.

Figure 14 is the sequential for the P sides switch measure that the overcurrent in the dynamic property tester comprising Fig. 1 prevents processing Figure.

Figure 15 is the figure of the current path when overcurrent in the P sides switch measure for represent Figure 14 prevents from handling.

Figure 16 is that the overcurrent comprising the high speed cut-out circuit in the dynamic property tester for having used Fig. 1 prevents from handling N sides switch measure timing diagram.

Figure 17 is when representing to have used the overcurrent of the high speed cut-out circuit in Figure 16 N sides switch measure to prevent from handling The figure of current path.

Figure 18 is that the overcurrent of the high speed cut-out circuit in the dynamic property tester for include the use of Fig. 1 prevents from handling P sides switch measure timing diagram.

Figure 19 is when representing to have used the overcurrent of the high speed cut-out circuit in Figure 18 P sides switch measure to prevent from handling The figure of current path.

Figure 20 is the timing diagram of the N sides capacity of short circuit measure in Fig. 1 dynamic property tester.

Figure 21 is the timing diagram of the P sides capacity of short circuit measure in Fig. 1 dynamic property tester.

Figure 22 is the circuit diagram of the variation for the dynamic property tester for representing Fig. 1.

Figure 23 is the electricity when overcurrent of the N sides switch measure in the dynamic property tester for represent Figure 22 prevents from handling The figure of flow path.

Figure 24 is the electricity when overcurrent of the P sides switch measure in the dynamic property tester for represent Figure 22 prevents from handling The figure of flow path.

Figure 25 is to prevent the examination of processing and Figure 22 dynamic characteristic for the overcurrent in the dynamic property tester to Fig. 1 Overcurrent in experiment device prevents the figure that processing is compared.

Figure 26 is the circuit diagram of the other variations for the dynamic property tester for representing Fig. 1.

Embodiment

Hereinafter, embodiment of the present disclosure is illustrated referring to the drawings.In addition, in the description of the drawings, wanted to same Element marks same reference, and the repetitive description thereof will be omitted.

Fig. 1 is the circuit diagram for the dynamic property tester for schematically showing an embodiment.It is as shown in figure 1, dynamic Step response experimental rig 1 is the device for the dynamic characteristic test for implementing DUT50, possesses hookup 10, overcurrent sensing circuit 20 and control device 30.As dynamic characteristic test, dynamic property tester 1 carries out switching measure and capacity of short circuit is surveyed Fixed (SC measure) etc..In switch determines, IGBT characteristics and diode characteristic can be measured.As IGBT characteristics, There are rise time, fall time, turn-on delay time, turn-off delay time, disconnection surge voltage, gate charge, connection loss And disconnect loss etc..As diode characteristic, there are reverse recovery time, reverse recovery current and Reverse recovery energy etc..

DUT50 be dynamic property tester 1 by testing equipment, be comprising 2 half electrically connected in series The power semiconductor modular of the 2in1 types of conductor element.Specifically, DUT50 includes transistor Qdp, Qdn (the 1st semiconductor, the 2 semiconductors) and diode Ddp, Ddn (the 1st diode, the 2nd diode).Transistor Qdp, Qdn are IGBT.Transistor Qdp's The colelctor electrode of emitter stage and transistor Qdn is electrically connected to each other.Transistor Qdp, Qdn colelctor electrode respectively with diode Ddp, Ddn Negative electrode electrical connection, the anode of transistor Qdp, Qdn emitter stage respectively with diode Ddp, Ddn electrically connects.In other words, it is brilliant Body pipe Qdp, Qdn with identical towards electrically connecting in series, diode Ddp be in parallel with transistor Qdp The fly-wheel diode of electrical connection, diode Ddn are the fly-wheel diodes electrically connected in parallel with transistor Qdn.DUT50 With P terminals, O terminals and N-terminal.P terminals electrically connect with transistor Qdp colelctor electrode and diode Ddp negative electrode, N Terminal electrically connects with transistor Qdn emitter stage and diode Ddn anode, emitter stage, the crystalline substance of O terminals and transistor Qdp The negative electrode electrical connection of body pipe Qdn colelctor electrode, diode Ddp anode and diode Ddn.In other words, O terminals with by crystalline substance Connecting portion Cd (the 1st connecting portion) electrical connections of body pipe Qdp, Qdn electrical connection.For example, DUT50 can be used in the inverter electricity of 1 phase Road, transistor Qdp can be used in upper arm, and transistor Qdn can be used in underarm.

Hookup 10 is the circuit for implementing DUT50 dynamic characteristic test.Hookup 10 possesses power capacitor Device 11, main switch portion 12, selection circuit 13, overcurrent prevent circuit 14, at a high speed cut-out circuit 15, selection circuit 16 and reactance Device L.Power capacitor 11 is to supply the electric current for dynamic characteristic test to the power supply of hookup 10.As power capacitor Device 11, such as it is capable of the thin film capacitor of frequency of use excellent.If the energy (electric charge) accumulated in power capacitor 11 subtracts Few, then power capacitor 11 is connected with high voltage power supply (not shown), is charged by high voltage power supply.

Main switch portion 12 is switching from power capacitor 11 to DUT50 (transistor Qdp or transistor Qdn) electric current Supply and the circuit of cut-out.Main switch portion 12 includes transistor Qp (the 3rd switch portion) and diode Dp.Transistor Qp is IGBT.Transistor Qp colelctor electrode electrically connects with diode Dp negative electrode, transistor Qp emitter stage and diode Dp anode Electrical connection.In other words, diode Dp is the fly-wheel diode electrically connected in parallel with transistor Qp.Transistor Qp's Colelctor electrode and power capacitor 11+terminal (positive terminal) electrically connects, transistor Qp emitter stage and transistor Qhp described later Colelctor electrode, diode Dhp negative electrode, switch SWp one end and DUT50 P terminals electrical connection.

Selection circuit 13 is that any one for selecting in transistor Qdp, Qdn that DUT50 included is surveyed as switch The circuit of fixed object.Selection circuit 13 include transistor Qhp, Qhn (the 1st switch portion, the 2nd switch portion) and diode Dhp, Dhn (the 3rd diode, the 4th diode).Transistor Qhp, Qhn are IGBT.Transistor Qhp, Qhn colelctor electrode respectively with two poles Pipe Dhp, Dhn negative electrode electrical connection, the anode of transistor Qhp, Qhn emitter stage respectively with diode Dhp, Dhn electrically connect.Change Sentence is talked about, and diode Dhp is the fly-wheel diode electrically connected in parallel with transistor Qhp, and diode Dhn is with parallel connection The fly-wheel diode that is electrically connected with transistor Qhn of mode.Transistor Qhp emitter stage and transistor Qhn colelctor electrode are mutual Electrical connection, and electrically connected with the negative electrode of transistor Qcf described later colelctor electrode and diode Dcf.In other words, transistor Qhp, Qhn with identical towards electrically connecting in series, and by the connecting portion Cs of transistor Qhp, Qhn electrical connection, (the 2nd connects Portion) electrically connected via high speed cut-out circuit 15 and reactor L with DUT50 O terminals.Transistor Qhp colelctor electrode and crystal Pipe Qp emitter stage, diode Dp anode, switch SWp one end and DUT50 P terminals electrical connection.Transistor Qhn hair Emitter-base bandgap grading and power capacitor 11-terminal (negative terminal), N-terminal of the other end and DUT50 that switch SWn electrically connect.

Overcurrent prevents that circuit 14 from being to be accumulated for consuming in the circuit of reactor L energy.Overcurrent prevents circuit 14 It is configured to electrically connect with reactor L in parallel.Overcurrent prevents circuit 14 from including transistor Qif, Qir and diode Dif、Dir.Transistor Qif, Qir are IGBT.Transistor Qif, Qir colelctor electrode are electric with diode Dif, Dir negative electrode respectively Connection, the anode of transistor Qif, Qir emitter stage respectively with diode Dif, Dir electrically connect.In other words, diode Dif The fly-wheel diode electrically connected in parallel with transistor Qif, diode Dir be in parallel with transistor The fly-wheel diode of Qir electrical connections.Transistor Qif emitter stage and transistor Qir emitter stage are electrically connected to each other.In other words Say, transistor Qif, Qir are electrically connected in series with mutually opposite direction.Transistor Qif colelctor electrode with it is described later One end electrical connection of transistor Qcr colelctor electrode, diode Dcr negative electrode and reactor L.Transistor Qir colelctor electrode with The O terminals electrical connection of the reactor L other end, the other end for switching SWp, the one end for switching SWn and DUT50.

Cut-out circuit 15 is for making overcurrent prevent circuit 14 consumes at high speed from accumulating in reactor L energy at a high speed Circuit.Cut-out circuit 15 is configured to electrically connect with reactor L in series at a high speed.Cut-out circuit 15 includes crystal at a high speed Pipe Qcf, Qcr and diode Dcf, Dcr.Transistor Qcf, Qcr are IGBT.Transistor Qcf, Qcr colelctor electrode respectively with two poles Pipe Dcf, Dcr negative electrode electrical connection, the anode of transistor Qcf, Qcr emitter stage respectively with diode Dcf, Dcr electrically connect.Change Sentence is talked about, and diode Dcf is the fly-wheel diode electrically connected in parallel with transistor Qcf, and diode Dcr is with parallel connection The fly-wheel diode that is electrically connected with transistor Qcr of mode.Transistor Qcf emitter stage and transistor Qcr emitter stage are mutual Electrical connection.In other words, transistor Qcf, Qcr is electrically connected in series with mutually opposite direction.Transistor Qcf collection The negative electrode of electrode and transistor Qhp emitter stage, transistor Qhn colelctor electrode, diode Dhp anode and diode Dhn Electrical connection.One end of transistor Qcr colelctor electrode and transistor Qif colelctor electrode, diode Dif negative electrode and reactor L Electrical connection.

Selection circuit 16 be for select transistor Qdp, Qdn that DUT50 included any one as capacity of short circuit The circuit of the object of measure.Selection circuit 16 includes switch SWp, SWn.It is relay to switch SWp, SWn.Switch SWp one end Emitter stage, diode Dp anode, transistor Qhp colelctor electrode, diode Dhp negative electrode and DUT50 with transistor Qp P terminals electrical connection.The one end for switching the SWp other end and switch SWn is electrically connected to each other, and the other end with reactor L, The O terminals electrical connection of transistor Qir colelctor electrode, diode Dir negative electrode and DUT50.Switch the SWn other end and power supply Capacitor 11-the N-terminal electrical connection of terminal, transistor Qhn emitter stage, diode Dhn anode and DUT50.

Reactor L is the load of dynamic characteristic test.In other words, reactor L is transistor Qdp, Qdn load.Electricity Anti- device L one end electrically connects with the negative electrode of transistor Qcr colelctor electrode and diode Dcr, the reactor L other end with DUT50 O terminals electrical connection.

Overcurrent sensing circuit 20 is the circuit that convection current overtesting circuit 10 and DUT50 overcurrent are detected.Cross Current detection circuit 20 includes current sensor 21, current sensor 22, comparator 23 and comparator 24.

Current sensor 21 is the current value to flowing through hookup 10 and DUT50 electric current when N sides switch and determined The sensor detected.Current sensor 21 be arranged at connection DUT50 N-terminal and power capacitor 11-cloth of terminal Near N-terminal of line.Current sensor 21 exports the current value detected to comparator 23.Current sensor 22 is in P Side, which switchs, flows through the sensor that the current value of hookup 10 and DUT50 electric current is detected when determining.Current sensor 22 are arranged near the P terminals of the wiring of connection DUT50 P terminals and transistor Qp emitter stage.Current sensor 22 will be examined The current value measured is exported to comparator 24.

Comparator 23 compares the current value and the overcurrent threshold value Ref_N of N sides that are detected by current sensor 21 Compared with, and comparative result is exported to control device 30.Overcurrent threshold value Ref_N is for detection of excessive current and pre-determined Value.In comparator 23, the overcurrent threshold value Ref_N of N sides is inputted to+terminal, the electricity that will be detected by current sensor 21 Flow valuve is inputted to-terminal.In this case, comparator 23 is overcurrent threshold in the current value detected by current sensor 21 In the case of below value Ref_N, the output signal of high level is exported to control device 30, detected by current sensor 21 In the case that the current value ratio overcurrent threshold value Ref_N that goes out is big, low level output signal is exported to control device 30.

Comparator 24 compares the current value and the overcurrent threshold value Ref_P of P sides that are detected by current sensor 22 Compared with, and comparative result is exported to control device 30.Overcurrent threshold value Ref_P is for detection of excessive current and pre-determined Value.In comparator 24, the overcurrent threshold value Ref_P of P sides is inputted to+terminal, the electricity that will be detected by current sensor 22 Flow valuve is inputted to-terminal.In this case, comparator 24 is overcurrent threshold in the current value detected by current sensor 22 In the case of below value Ref_P, the output signal of high level is exported to control device 30, detected by current sensor 22 In the case that the current value ratio overcurrent threshold value Ref_P that goes out is big, low level output signal is exported to control device 30.

Control device 30 be carry out be used for switching transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, Qdp, Qdn and Switch the controller of the switching control of SWp, SWn on-state (conducting state) and off-state (dissengaged positions).Control dress 30 are put by respectively exporting signal Sqp, Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp, Sqdn to transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, Qdp, Qdn, to switch the on-state of each transistor and off-state.Control dress 30 are put by respectively exporting relay signal Sswp, Sswn to switch SWp, SWn, to switch the on-state of each switch and break Open state.For the switching control carried out by control device 30, it is described in detail in following each measure.In addition, The on-state of so-called transistor means that colelctor electrode-transmitting interpolar is electric conducting state, the disconnection shape of so-called transistor State means that colelctor electrode-transmitting interpolar is that state is electrically cut off.In addition, in the case where transistor is IGBT, according to grid-hair Voltage across poles is penetrated to be switched on state and off-state.In the following description, for convenience, height is being supplied to transistor In the case of the signal of level, transistor is turned on, and low level signal is being supplied to transistor In the case of, transistor turns into off-state.

(switch measure)

Next, to having used the switch of dynamic property tester 1 measure to illustrate.First, to transistor Qdn's Switch measure (sometimes referred to as " N sides switch measure ".) illustrate.Fig. 2 is that the N sides switch in dynamic property tester 1 is surveyed Fixed timing diagram.Fig. 3 is the figure of current path when representing the switch connection in the switch measure of N sides.Fig. 4 is to represent that N sides switch The figure of current path when switching off in measure.Fig. 5 is current path when representing the energy regenerating in the switch measure of N sides Figure.

In addition, in switch determines, relay signal Sswp, Sswn are always set at low level, and switch SWp, SWn is total It is off-state, so omitting the explanation of relay signal and switch in each step.In addition, in the following description, will The electric current supplied from power capacitor 11 is set to Ic, will flow through transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, Qdp, Qdn Electric current be set to electric current Iqp, Iqhp, Iqhn, Iqif, Iqir, Iqcf, Iqcr, Iqdp, Iqdn, will flow through reactor L's Electric current is set to electric current IL to illustrate.In addition, for flowing through the electric current of each transistor, emitter stage is being flowed into from colelctor electrode In the case of be on the occasion of flowing into the situation of colelctor electrode from emitter stage or flowing into negative electrode (forward direction) from the anode of fly-wheel diode In the case of be negative value.It is just in the case of the O terminals flowing towards DUT50 for flowing through reactor L electric current Value, it is negative value in the case where being flowed to its opposite direction.In addition, each step, but each step are shown with identical depth map Time without identical, can adjust as suitably desired.In each step, the opportunity of the switching control of each transistor both may be used , can also be different with identical.

As shown in Figure 2, in step ST11, control device 30 by signal Sqp, Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp, Sqdn are set as low level and exported.Therefore, transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, Qdp, Qdn are off-state, do not have electric current flowing in each transistor.In addition, the energy of power capacitor 11 Ec (electric charge) is for example as full of electricity condition.

Then, in step ST12, signal Sqp, Sqhp, Sqcf, Sqcr, Sqdn are set as height by control device 30 Signal in addition is simultaneously set as low level to export by level.Thus, transistor Qp, Qhp, Qcf, Qcr, Qdn into For on-state, transistor in addition turns into off-state.Now, as shown in Figure 3, formed from power capacitor 11+terminal passes sequentially through transistor Qp, transistor Qhp, transistor Qcf, transistor Qcr, reactor L and transistor Qdn And return to power capacitor 11-the current path Pn1 of terminal, flow in current path Pn1 and supplied from power capacitor 11 The electric current given.In this condition, the process of electric current Ic, Iqp, Iqhp, Iqcf ,-Iqcr, IL, Iqdn magnitude of current over time And increase, on the other hand, the ENERGY E c of power capacitor 11 process over time and reduce.In addition, transistor Qhn, Not streaming current Iqhn, Iqif, Iqir, Iqdp in Qif, Qir, Qdp.In other words, in step ST12, control device 30 is logical Crossing is turned on transistor Qhp, make transistor Qdn turn into switch measure object, by make transistor Qp, Qcf, Qcr is turned on, and electric current is supplied to transistor Qdn from power capacitor 11.

Then, in step ST13, signal Sqp, Sqhp, Sqcf, Sqcr are set as high level by control device 30 And signal in addition is set as low level to export.In other words, from step ST12 only by signal Sqdn Low level is changed to from high level, for signal in addition without change.Thus, transistor Qp, Qhp, Qcf, Qcr is turned on, and transistor in addition turns into off-state.Now, as shown in Figure 4, formed in transistor Current path Pn2 touring successively in Qhp, transistor Qcf, transistor Qcr, reactor L and diode Ddp, is immediately being walked The electric current flowed before rapid ST13 in current path Pn1 flows in current path Pn2.Therefore, electric current Ic, Iqp, Iqdn The magnitude of current is 0, electric current is not supplied from power capacitor 11, so ENERGY E c does not change.Now, energy is by transistor Qhp, crystal Pipe Qcf, transistor Qcr, reactor L and diode the Ddp consumption such as resistance components, so electric current Iqhp, Iqcf ,- Iqcr, IL, flow through diode Ddp electric current-Iqdp the magnitude of current from before Following step ST13 in current path Pn1 The magnitude of current of the electric current of flowing is risen, and process over time is slowly reduced.In addition, electric current Iqhn, Iqif, Iqir magnitude of current Still it is 0.

Then, it is identical with step ST12 in step ST14, control device 30 by signal Sqp, Sqhp, Sqcf, Sqcr, Sqdn are set as high level and signal in addition are set as into low level to export.In other words, from step Signal Sqdn is only changed to high level by ST13 from low level, for signal in addition without change.By This, forms current path Pn1, the electric current flowed before Following step ST14 in current path Pn2 and from power capacitor The electric current that device 11 supplies flows in current path Pn1.Now, electric current Ic, Iqp, Iqhp, Iqcf ,-Iqcr, IL, Iqdn The magnitude of current is from the magnitude of current of the electric current flowed before Following step ST14 in current path Pn2 further with the time By and increase, on the other hand, the process of the ENERGY E c of power capacitor 11 over time is further reduced.In addition, in crystal Not streaming current Iqhn, Iqif, Iqir, Iqdp in pipe Qhn, Qif, Qir, Qdp.

Then, it is identical with step ST13 in step ST15, control device 30 by signal Sqp, Sqhp, Sqcf, Sqcr is set as high level and signal in addition is set as into low level to export.In other words, from step ST14 Signal Sqdn is only changed to low level from high level, for signal in addition without change.Thus, shape Into current path Pn2, the electric current flowed before Following step ST15 in current path Pn1 flows in current path Pn2. Now, identical with step ST13, electric current Ic, Iqp, Iqdn magnitude of current are 0, electric current Iqhp, Iqcf ,-Iqcr, IL ,-Iqdp Magnitude of current process over time and slowly reduce.In addition, electric current Iqhn, Iqif, Iqir magnitude of current are still 0.In addition, by In not supplying electric current from power capacitor 11, so ENERGY E c does not change.At the moment, obtain required for N sides switch determines Waveform.In other words, step ST12~step ST15 make transistor Qdn turn into off-state untill, obtain transistor Qdn's Waveform required for switch measure.In this sense, it may be said that step ST12~step ST15's makes transistor Qdn turn into disconnected Processing untill open state is the switch measure of transistor Qdn in the narrow sense.

Afterwards, signal Sqhp is changed to low level by control device 30 from high level.Thus, transistor Qp, Qcf, Qcr is turned on, and transistor in addition turns into off-state.Now, as shown in Figure 5, formed from power supply electricity Container 11-terminal passes sequentially through diode Dhn, transistor Qcf, transistor Qcr, reactor L, diode Ddp and crystal Pipe Qp and return to power capacitor 11+the current path Pn3 of terminal, signal Sqhp is immediately being switched into low level The electric current flowed before in current path Pn2 flows in current path Pn3.Therefore, the electric current Iqhp magnitude of current is 0.And And due to current path Pn3 from power capacitor 11-terminal direction+terminal, so power capacitor 11 is electrically charged, energy Ec processes over time and increase, on the other hand, electric current-Iqhn (electric current for flowing through diode Dhn), Iqcf ,-Iqcr, IL ,-Iqdp ,-Iqp ,-Ic (from power capacitor 11-electric current from terminal to the flowing of+terminal) the magnitude of current over time Process and reduce.In addition, electric current Iqdn, Iqif, Iqir magnitude of current are still 0.

Then, in step ST16, continue with step ST15 identical states, the electric current flowed in current path Pn3 The magnitude of current be changed into 0, the ENERGY E c of power capacitor 11 is returned nearly to be full of electricity condition.

Then, in step ST17, control device 30 by signal Sqp, Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp, Sqdn are set as low level and exported.Therefore, transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, Qdp, Qdn turns into off-state, the not streaming current in each transistor.Like this, switch measure in N sides terminates.It is in addition it is also possible to logical Crossing the magnitude of current for the electric current that detection circuit etc. detection (not shown) is flowed in current path Pn3 turns into below defined threshold value this One situation, control device 30 detect the electricity of the electric current flowed in current path Pn3 according to the output signal for carrying out self-detection circuit Flow is almost 0 this case (energy regenerating processing terminates).Defined threshold value is for example set to 0 or the value more slightly larger than 0. Moreover, control device 30 can also terminate this case according to energy regenerating processing is detected, and carry out step ST17 processing.

As described above, control device 30 by when starting N sides switch measure, make transistor Qp, Qhp, Qcf, Qcr into For on-state, and the end of the collection of the waveform in the switch measure of N sides, transistor Qhp is turned into off-state, Reclaim the energy used in the switch measure of N sides.Moreover, energy of the control device 30 used in N sides switch measure After being reclaimed, transistor Qp, Qcf, Qcr is set to turn into off-state.Therefore, because the energy at the end of the switch measure of N sides Ec, which almost turns into, is full of electricity condition, so without carrying out filling for power capacitor 11 by high voltage power supply to determine next time Electricity.

Next, switch measure (the sometimes referred to as situation of " P sides switch measure " to transistor Qdp.) illustrate.Figure 6 be the timing diagram for representing the P sides switch measure in dynamic property tester 1.Fig. 7 is to represent the switch in the switch measure of P sides The figure of current path during connection.Fig. 8 is the figure for representing current path when switching off in the switch measure of P sides.Fig. 9 is table Show P sides switch measure in energy regenerating when current path figure.

As shown in Figure 6, step ST21 is identical with Fig. 2 step ST11, so omitting the description.Then, in step In ST22, signal Sqp, Sqhn, Sqcf, Sqcr, Sqdp are set as high level and by addition by control device 30 Signal is set as low level to export.Thus, transistor Qp, Qhn, Qcf, Qcr, Qdp is turned on, in addition Transistor turn into off-state.Now, as shown in fig. 7, formed from power capacitor 11+terminal passes sequentially through transistor Qp, transistor Qdp, reactor L, transistor Qcr, transistor Qcf and transistor Qhn and return to power capacitor 11- The current path Pp1 of terminal, the electric current supplied from power capacitor 11 flow in current path Pp1.In this condition, electric current Ic, Iqp, Iqdp ,-IL, Iqcr ,-Iqcf, Iqhn magnitude of current process over time and increase, on the other hand, power supply electricity The ENERGY E c of container 11 processes over time and reduce.In addition, the not streaming current in transistor Qhp, Qif, Qir, Qdn Iqhp、Iqif、Iqir、Iqdn.In other words, in step ST22, control device 30 connects shape by turning into transistor Qhn State, and transistor Qdp is turned into the object of switch measure, and be turned on by making transistor Qp, Qcf, Qcr, and Electric current is supplied to transistor Qdp from power capacitor 11.

Then, in step ST23, signal Sqp, Sqhn, Sqcf, Sqcr are set as high level by control device 30 And signal in addition is set as low level to export.In other words, from step ST22 only by signal Sqdp Low level is changed to from high level, for signal in addition without change.Thus, transistor Qp, Qhn, Qcf, Qcr is turned on, and transistor in addition turns into off-state.Now, as shown in figure 8, formed transistor Qhn, Current path Pp2 touring successively in diode Ddn, reactor L, transistor Qcr and transistor Qcf, in Following step The electric current flowed before ST23 in current path Pp1 flows in current path Pp2.Therefore, electric current Ic, Iqp, Iqdp electricity Flow is 0, electric current is not supplied from power capacitor 11, so ENERGY E c does not change.Now, energy is by transistor Qhn, two Pole pipe Ddn, reactor L, transistor Qcr and transistor the Qcf consumption such as resistance components, so electric current Iqhn ,-Iqdn (streams Cross diode Ddn electric current) ,-IL, Iqcr ,-Iqcf the magnitude of current from before Following step ST23 in current path Pp1 The magnitude of current of the electric current of middle flowing rises, process over time and slowly reduce.In addition, electric current Iqhp, Iqif, Iqir electricity Flow is still 0.

Then, it is identical with step ST22 in step ST24, control device 30 by signal Sqp, Sqhn, Sqcf, Sqcr, Sqdp are set as high level and signal in addition are set as into low level to export.In other words, from step Signal Sqdp is only changed to high level by ST23 from low level, for signal in addition without change.By This, forms current path Pp1, the electric current flowed before Following step ST24 in current path Pp2 and from power capacitor The electric current that device 11 supplies flows in current path Pp1.Now, electric current Ic, Iqp, Iqdp ,-IL, Iqcr ,-Iqcf, Iqhn The magnitude of current from the magnitude of current of the electric current flowed before Following step ST24 in current path Pp2 further with the time Process and increase, on the other hand, the process of the ENERGY E c of power capacitor 11 over time is further reduced.In addition, in crystalline substance Not streaming current Iqhp, Iqif, Iqir, Iqdn in body pipe Qhp, Qif, Qir, Qdn.

Then, it is identical with step ST23 in step ST25, control device 30 by signal Sqp, Sqhn, Sqcf, Sqcr is set as high level and signal in addition is set as into low level to export.In other words, from step ST24 Signal Sqdp is only changed to low level from high level, for signal in addition without change.Thus, shape Into current path Pp2, the electric current flowed before Following step ST25 in current path Pp1 flows in current path Pp2. Now, identical with step ST23, electric current Ic, Iqp, Iqdp magnitude of current is 0, electric current Iqhn ,-Iqdn ,-IL, Iqcr ,- The process of the Iqcf magnitude of current over time is slowly reduced.In addition, electric current Iqhp, Iqif, Iqir magnitude of current are still 0.Separately Outside, due to not supplying electric current from power capacitor 11, so ENERGY E c does not change.At the moment, P sides switch measure is obtained Required waveform.In other words, step ST22~step ST25 make transistor Qdp turn into off-state untill, obtain crystalline substance Waveform required for body pipe Qdp switch measure.In this sense, it may be said that step ST22~step ST25's makes transistor Qdp turn into off-state untill processing be transistor Qdp in the narrow sense switch measure.

Afterwards, signal Sqhn is changed to low level by control device 30 from high level.Thus, transistor Qp, Qcf, Qcr is turned on, and transistor in addition turns into off-state.Now, as shown in figure 9, being formed from power capacitor 11-terminal passes sequentially through diode Ddn, reactor L, transistor Qcr, transistor Qcf, diode Dhp and transistor Qp And return to power capacitor 11+the current path Pp3 of terminal, before signal Sqhn immediately is switched into low level The electric current flowed in current path Pp2 flows in current path Pp3.Therefore, the electric current Iqhn magnitude of current is 0.It is moreover, electric Flow path Pp3 from power capacitor 11-terminal direction+terminal, so power capacitor 11 is electrically charged, ENERGY E c with when Between process and increase, on the other hand, electric current-Iqdn ,-IL, Iqcr ,-Iqcf ,-Iqhp (flow through diode Dhp electricity Stream) ,-Iqp ,-Ic magnitude of current process over time and reduce.In addition, electric current Iqdp, Iqif, Iqir magnitude of current are still For 0.

Then, in step ST26, continue with step ST25 identical states, the electric current flowed in current path Pp3 The magnitude of current be 0, the ENERGY E c of power capacitor 11 is returned nearly to be full of electricity condition.

Then, in step ST27, control device 30 by signal Sqp, Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp, Sqdn are set as low level and exported.Therefore, transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, Qdp, Qdn turns into off-state, the streaming current in the middle part of each transistor.Like this, switch measure in P sides terminates.It is in addition it is also possible to logical Cross detection circuit etc. (not shown) detect the magnitude of current of the electric current flowed in current path Pp3 be below defined threshold value this One situation, control device 30 detect the electric current flowed in current path Pp3 according to the output signal for carrying out self-detection circuit The magnitude of current is almost 0 this case (end of energy regenerating processing).Defined threshold value is for example set to 0 or more slightly larger than 0 Value.Moreover, the end that control device 30 can also be handled according to energy regenerating is detected, to carry out step ST27 processing.

As above, control device 30 by when starting P sides switch measure, make transistor Qp, Qhn, Qcf, Qcr into For on-state, and the end of the collection of the waveform in the switch measure of P sides, transistor Qhn is turned into off-state, Reclaim the energy used in the switch measure of P sides.Moreover, control device 30 is being reclaimed used in the switch measure of P sides Energy after, transistor Qp, Qcf, Qcr is turned into off-state.Therefore, because ENERGY E c is several at the end of the switch measure of P sides It is full of electricity condition, so without carrying out the charging of power capacitor 11 using high voltage power supply for measure next time.

Next, the comparative example for having used the switch of dynamic property tester 1 to determine is illustrated.Figure 10 is to compare The timing diagram of the N sides switch measure of example.Figure 11 is the timing diagram of the P sides switch measure of comparative example.As shown in Figure 10, comparative example Signal Sqhp is switched to low level opportunity by N sides switch measure compared with the switch measure of Fig. 2 N sides from high level It is different.Specifically, in the switch measure of the N sides of comparative example, in step ST115 and step ST116, control device 30 will Signal Sqhp is maintained high level.Therefore, flowed in current path Pn2 electric current (electric current Iqhp, Iqcf ,-Iqcr, IL ,-Iqdp) magnitude of current process over time and slowly reduce, about 0, but power capacitor 11 is not filled Electricity.Therefore, it is necessary to be charged using high voltage power supply to power capacitor 11 before determine next time.

Similarly, as shown in figure 11, the P sides switch measure of comparative example is compared with the switch measure of Fig. 6 P sides, by grid Signal Sqhn switches to low level opportunity different from high level.Specifically, in the switch measure of the P sides of comparative example, in step In rapid ST125 and step ST126, signal Sqhn is maintained high level by control device 30.Therefore, in current path The magnitude of current of the electric current (electric current Iqhn ,-Iqdn ,-IL, Iqcr ,-Iqcf) flowed in Pp2 process over time and it is slow Ground is reduced, and about 0, but power capacitor 11 is not charged.Therefore, it is necessary to utilize before determine next time High voltage power supply charges to power capacitor 11.

Next, the overcurrent of dynamic property tester 1 is prevented from illustrating.First, in the switch measure of N sides Overcurrent prevents from illustrating.Figure 12 is the N sides switch measure that processing is prevented comprising the overcurrent in dynamic property tester 1 Timing diagram.Figure 13 is the figure for representing the current path when overcurrent that N sides are switched in measure prevents from handling.

As shown in Figure 12, step ST31~step ST33 signal and Fig. 2 step ST11~step ST13 It is identical, so omitting the description.In this embodiment, in step ST33, it is assumed that due to DUT50 is bad and transistor Qdn does not turn into disconnected The situation of open state.In this case, after step ST32, electric current (electric current Ic, Iqp, Iqhp, Iqcf ,-Iqcr, IL, Iqdn) continue to flow in current path Pn1, process over time, its magnitude of current continues to increase.

Moreover, in step ST34, the magnitude of current of the electric current flowed in current path Pn1 becomes the overcurrent than N side Threshold value Ref_N is big, and comparator 23 exports low level output signal to control device 30.Moreover, control device 30 according to from This case that comparator 23 receives low level output signal, detection of excessive current, and signal Sqp, Sqhp is electric from height It is flat to be changed to low level, signal Sqir is changed to high level from low level.Thus, transistor Qcf, Qcr, Qir, Qdn It is turned on, transistor in addition turns into off-state.Now, as shown in figure 13, formed in transistor Qcf, crystalline substance Current path Pn41 touring successively in body pipe Qcr, reactor L, transistor Qdn and diode Dhn, and formed in reactance Current path Pn42 touring successively in device L, transistor Qir and diode Dif.Moreover, flowed in current path Pn1 Overcurrent separates inflow current path P n41 and current path Pn42.Thus, prevent overcurrent continue hookup 10 with And flowed in DUT50.

Then, it is identical with step ST15 in step ST35, state of the control device 30 from step ST34 signal Signal Sqdn is only changed to low level from high level, for signal in addition without change.But by And transistor Qdn bad in DUT50 does not turn into off-state, and each transistor maintains and step ST34 identical states.Moreover, The electric current flowed in current path Pn41 is touring in current path Pn41, and thus energy is by transistor Qcf, transistor Qcr, electricity Anti- device L, transistor Qdn and diode Dhn resistance components etc. consume, thus its magnitude of current process over time and subtract It is few.Similarly, the electric current flowed in current path Pn42 is touring in current path Pn42, so energy is by reactor L, crystalline substance Body pipe Qir and diode Dif resistance components etc. consume, thus its magnitude of current process over time and reduce.

Then, in step ST36, the state of step ST35 signal continues, in current path Pn41 and electric current The magnitude of current of the electric current flowed in path P n42 further reduces and turns into 0.

Then, in step ST37, control device 30 by signal Sqp, Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp, Sqdn are set as low level and exported.Therefore, transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, Qdp, Qdn turns into off-state, the not streaming current in each transistor.In addition it is also possible to by detection circuit etc. (not shown) come Detecting the magnitude of current of the electric current flowed in current path Pn41 and current path Pn42 turns into below defined threshold value, control Device 30 detects what is flowed in current path Pn41 and current path Pn42 according to the output signal for carrying out self-detection circuit The magnitude of current of electric current is almost 0 this case (end of energy expenditure processing).Defined threshold value is for example set to 0 or ratio 0 slightly larger value.Moreover, control device 30 can also carry out step according to the end this case for detecting that energy expenditure is handled ST37 processing.

As described above, this case that control device 30 detects overcurrent by basis in the switch measure of N sides, crystalline substance is made Body pipe Qp, Qhp turn into off-state, and are turned on transistor Qir, to make overcurrent prevent circuit 14 from acting. Thus, the energy accumulated when generating overcurrent in reactor L prevents circuit 14 from consuming by overcurrent, prevents from switching in N sides In measure, more overcurrent flow into DUT50.

Next, the overcurrent in the switch measure of P sides is prevented from illustrating.Figure 14 is to include dynamic property tester Overcurrent in 1 prevents the timing diagram of the P sides switch measure of processing.Figure 15 is to represent that the overcurrent in the switch measure of P sides prevents The figure of current path during processing.

As shown in figure 14, step ST41~step ST43 signal and Fig. 6 step ST21~step ST23 phase Together, so omitting the description.In this embodiment, in step ST43, it is assumed that due to DUT50 is bad and transistor Qdp does not turn into and disconnected The situation of state.In this case, after step ST42, electric current (electric current Ic, Iqp, Iqdp ,-IL, Iqcr ,-Iqcf, Iqhn) continue to flow in current path Pp1, process over time, its magnitude of current continues to increase.

Moreover, in step ST44, the magnitude of current of the electric current flowed in current path Pp1 becomes the overcurrent than P side Threshold value Ref_P is big, and comparator 24 exports low level output signal to control device 30.Moreover, control device 30 according to from This case that comparator 24 receives low level output signal, detection of excessive current, and signal Sqp, Sqhn is electric from height It is flat to be changed to low level, signal Sqif is changed to high level from low level.Thus, transistor Qcf, Qcr, Qif, Qdp It is turned on, transistor in addition turns into off-state.Now, as shown in figure 15, formed in reactor L, crystal Current path Pp41 touring successively in pipe Qcr, transistor Qcf, diode Dhp and transistor Qdp, and formed in reactance Current path Pp42 touring successively in device L, transistor Qif and diode Dir.Moreover, flowed in current path Pp1 Overcurrent separates inflow current path P p41 and current path Pp42.Thus, prevent overcurrent continue hookup 10 with And flowed in DUT50.

Then, it is identical with step ST25 in step ST45, state of the control device 30 from step ST44 signal Signal Sqdp is only changed to low level from high level, for signal in addition without change.But by Bad in DUT50, so transistor Qdp does not turn into off-state, each transistor maintains and step ST44 identical states.And And the electric current due to being flowed in current path Pp41 is touring in current path Pp41, so energy is by reactor L, crystal Pipe Qcr, transistor Qcf, the diode Dhp and transistor Qdp consumption such as resistance components, so its magnitude of current is over time By and reduce.Similarly, due to the electric current that is flowed in current path Pp42 in current path Pp42 it is touring, so energy Resistance components by reactor L, transistor Qif and diode Dir etc. consume, thus its magnitude of current process over time and Reduce.

Then, in step ST46, the state of step ST45 signal continues, in current path Pp41 and electric current The magnitude of current of the electric current flowed in path P p42 further reduces and turns into 0.

Then, in step ST47, control device 30 by signal Sqp, Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp, Sqdn are set as low level and exported.Therefore, transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, Qdp, Qdn turns into off-state, the not streaming current in each transistor.In addition it is also possible to by detection circuit etc. (not shown) come The magnitude of current for detecting the electric current flowed in current path Pp41 and current path Pp42 is this feelings below defined threshold value Condition, control device 30 are detected in current path Pp41 and current path Pp42 according to the output signal for carrying out self-detection circuit The magnitude of current of the electric current of flowing is almost 0 this case (end of energy expenditure processing).Defined threshold value is for example set to 0 Or the value more slightly larger than 0.Moreover, control device 30 can also enter according to the end this case for detecting that energy expenditure is handled Row step ST47 processing.

As described above, this case that control device 30 detects overcurrent by basis in the switch measure of P sides, and make Transistor Qp, Qhn turn into off-state, and are turned on transistor Qif, to make overcurrent prevent that circuit 14 is dynamic Make.Thus, the energy accumulated when generating overcurrent in reactor L prevents circuit 14 from consuming by overcurrent, prevents from opening in P sides Close in measure, more overcurrent flow into DUT50.

Further, the overcurrent for having used cut-out circuit 15 at a high speed is prevented from illustrating.First, cut at a high speed to having used Overcurrent in the N sides switch measure of deenergizing 15 prevents from illustrating.Figure 16 is to include to have used dynamic property tester 1 In high speed cut-out circuit overcurrent prevent processing N sides switch measure timing diagram.Figure 17 is to represent to have used N sides to switch The figure of current path when the overcurrent of high speed cut-out circuit in measure prevents from handling.

The timing diagram of signal shown in Figure 16 is compared with the timing diagram of the signal shown in Figure 12, in step In ST54, signal Sqcf, Sqcr is further changed to low electricity by control device 30 according to overcurrent is detected from high level Flat point is different.Therefore, if detection of excessive current, transistor Qir, Qdn are turned on, and transistor in addition turns into Off-state.Now, as shown in figure 17, current path Pn41 is not formed, and only forms current path Pn42, so on electric current road The overcurrent inflow current path P n42 flowed in the Pn1 of footpath.Moreover, because the electric current flowed in current path Pn42 is on electric current road Touring and consumed energy in the Pn42 of footpath, thus its magnitude of current process over time and reduce.

As described above, control device 30 by according to N sides switch measure in detect overcurrent, make transistor Qp, Qhp turns into off-state, and is turned on transistor Qir, to make overcurrent prevent circuit 14 from acting, further leads to Crossing makes transistor Qcf, Qcr turn into off-state, act high speed cut-out circuit 15.Thus, stored when generating overcurrent Product flows into overcurrent in reactor L energy as electric current prevents circuit 14, and prevents circuit 14 from consuming by overcurrent.Do not make In the case that cut-out circuit 15 acts at a high speed, the overcurrent that is flowed in current path Pn1 separate inflow current path P n41 with And current path Pn42.Now, the resistance for the resistance components that the resistance value for contributing to the consumption of overcurrent is current path Pn41 The combined resistance value of the resistance value of value and current path Pn42 resistance components, the resistance of the resistance components than current path Pn42 It is worth small.Therefore, compared with not making the situation that cut-out circuit 15 acts at a high speed, the situation that cut-out circuit 15 acts at a high speed is made Under, contribute to the resistance value increase of the consumption of overcurrent, so the energy accumulated in reactor L is consumed in a short time, energy Enough further reliably to prevent in the switch measure of N sides, more overcurrent flow into DUT50.

Next, to having used the overcurrent in the P sides switch measure of cut-out circuit 15 at a high speed to prevent from illustrating.Figure 18 It is that the overcurrent that circuit is cut off comprising the high speed used in dynamic property tester 1 prevents the P sides switch of processing from determining Timing diagram.Figure 19 is electric current road when representing to have used the overcurrent of the high speed cut-out circuit in the switch measure of P sides to prevent from handling The figure in footpath.

The timing diagram of signal shown in Figure 18 is compared with the timing diagram of the signal shown in Figure 14, in step In ST64, signal Sqcf, Sqcr is further changed to low electricity by control device 30 according to overcurrent is detected from high level Flat point is different.Therefore, if detecting overcurrent, transistor Qif, Qdp are turned on, transistor in addition into For off-state.Now, as shown in figure 19, due to not forming current path Pp41, and current path Pp42 is only formed, so The overcurrent inflow current path P p42 flowed in current path Pp1.Moreover, because the electric current flowed in current path Pp42 exists Touring and consumed energy in current path Pp42, thus its magnitude of current process over time and reduce.

As described above, control device 30 according in the switch measure of P sides by detecting overcurrent, and makes transistor Qp, Qhn turn into off-state, and are turned on transistor Qif, to make overcurrent prevent circuit 14 from acting, enter one Step is by making transistor Qcf, Qcr turn into off-state, act high speed cut-out circuit 15.Thus, overcurrent is being generated When the energy accumulated in reactor L prevent from flowing in circuit 14 in overcurrent as electric current, and prevent circuit 14 from disappearing by overcurrent Consumption.In the case where not making cut-out circuit 15 action at a high speed, the overcurrent flowed in current path Pp1 separates inflow current road Footpath Pp41 and current path Pp42.Now, contribute to the consumption of overcurrent resistance value be current path Pp41 resistance into Point resistance value and current path Pp42 resistance components resistance value combined resistance value, resistance than current path Pp42 into The resistance value divided is small.Therefore, compared with not making the situation that cut-out circuit 15 acts at a high speed, acted making high speed cut-out circuit 15 In the case of, contribute to the resistance value increase of the consumption of overcurrent, so the energy accumulated in reactor L is disappeared in a short time Consumption, further reliably prevent in the switch measure of P sides, more overcurrent flow into DUT50.

(capacity of short circuit measure)

Next, to having used the capacity of short circuit of dynamic property tester 1 measure to illustrate.First, to transistor Qdn capacity of short circuit measure is (sometimes referred to as " N sides capacity of short circuit measure ".) illustrate.Figure 20 is dynamic property tester 1 In N sides capacities of short circuit measure timing diagram.As shown in figure 20, in step ST71, control device 30 is by relay signal Sswp, Sswn and signal Sqp, Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp, Sqdn are set as low electricity Put down and export.Therefore, it is to disconnect to switch SWp, SWn and transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, Qdp, Qdn State, the not streaming current in each transistor and switch.

Then, in step ST72, control device 30 sets relay signal Sswp and signal Sqp, Sqdn Set for high level and by relay signal Sswn and signal Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp Exported for low level.Thus, switch SWp and transistor Qp, Qdn are turned on, switch and crystalline substance in addition Body pipe turns into off-state.Now, formed from power capacitor 11+terminal passes sequentially through transistor Qp, switch SWp and crystalline substance Body pipe Qdn and return to power capacitor 11-current path of terminal, electric current flows in the current path.Like this, Short circuit current flows in transistor Qdn in a manner of not via reactor L.

Then, it is identical with step ST71 in step ST73, control device 30 by relay signal Sswp, Sswn and Signal Sqp, Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp, Sqdn are set as low level and exported.Thus, Whole switches and transistor turn into off-state, not streaming current in each transistor and in switching.More than A series of processing, carry out N sides capacity of short circuit measure.

Next, transistor Qdp capacity of short circuit measure (is sometimes referred to as " P sides capacity of short circuit measure ".) illustrate. Figure 21 is the timing diagram of the P sides capacity of short circuit measure in dynamic property tester 1.As shown in figure 21, in step ST81, control Device 30 processed by relay signal Sswp, Sswn and signal Sqp, Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp, Sqdn are set as low level and exported.Therefore, switch SWp, SWn and transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, Qdp, Qdn are off-state, the not streaming current in each transistor and switch.

Then, in step ST82, control device 30 sets relay signal Sswn and signal Sqp, Sqdp Set for high level and by relay signal Sswp and signal Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdn Exported for low level.Thus, switch SWn and transistor Qp, Qdp are turned on, switch and crystalline substance in addition Body pipe turns into off-state.Now, formed from power capacitor 11+terminal pass sequentially through transistor Qp, transistor Qdp and Switch SWn and return to power capacitor 11-current path of terminal, electric current flows in the current path.Like this, Short circuit current flows in transistor Qdp in a manner of not via reactor L.

Then, it is identical with step ST81 in step ST83, control device 30 by relay signal Sswp, Sswn and Signal Sqp, Sqhp, Sqhn, Sqif, Sqir, Sqcf, Sqcr, Sqdp, Sqdn are set as low level and exported.Thus, Whole switches and transistor turn into off-state, not streaming current in each transistor and in switching.More than A series of processing, carry out P sides capacity of short circuit measure.

In dynamic property tester 1 described above, when starting transistor Qdn switch measure, make transistor Qp, Qhp, Qcf, Qcr are turned on, and (are being used for adopting for the waveform of switch measure according to transistor Qdn switch measure Collection) terminate and make transistor Qhp transistor Qp, Qcf, Qcr is turned into off-state as after off-state.Carrying out crystal During pipe Qdn switch measure, supplied to transistor Qdn electric current from connecting portion Cs towards connecting portion Cd and flowed by power capacitor 11 Reactor L is crossed, at the time of transistor Qdn switch measure (collection for being used to switch the waveform of measure) terminates, in reactor L Middle accumulation has energy.Therefore, this is terminated by determining (collection for being used to switch the waveform of measure) according to transistor Qdn switch One situation and transistor Qhp is turned into off-state, so as to formed from power capacitor 11-terminal passes sequentially through diode Dhn, transistor Qcf, transistor Qcr, reactor L, diode Ddp and transistor Qp and return to power capacitor 11+ The current path Pn3 of terminal, accumulate energy in reactor L as current direction power capacitor 11+terminal.Thus, energy A part for the energy (electric power) of enough power capacitors 11 to used in transistor Qdn switch measure reclaims. As a result, the electricity usage amount in dynamic characteristic test can be reduced.In addition, can shorten in order to determine next time and to electricity The time that source capacitor 11 charges, (raising) machine cycle can be shortened.

In addition, in dynamic property tester 1, make when starting transistor Qdp switch measure transistor Qp, Qhn, Qcf, Qcr are turned on, and are terminating this according to transistor Qdp switch measure (collection for being used to switch the waveform of measure) One situation and make transistor Qhn turn into off-state after, transistor Qp, Qcf, Qcr is turned into off-state.In transistor Qdp Switch measure when, supplied from power capacitor 11 to transistor Qdp electric current, flow through electricity from connecting portion Cd towards connecting portion Cs Anti- device L, at the time of transistor Qdp switch measure (collection for being used to switch the waveform of measure) terminates, stored in reactor L Product has energy.Therefore, this feelings is terminated by determining (collection for being used to switch the waveform of measure) according to transistor Qdp switch Condition and transistor Qhn is turned into off-state, so as to formed from power capacitor 11-terminal pass sequentially through diode Ddn, Reactor L, transistor Qcr, transistor Qcf, diode Dhp and transistor Qp and return to power capacitor 11+terminal Current path Pp3, accumulate energy in reactor L as current direction power capacitor 11+terminal.Thereby, it is possible to right A part for the energy (electric power) of power capacitor 11 used in transistor Qdp switch measure is reclaimed.It is tied Fruit is can further to reduce the electricity usage amount in dynamic characteristic test.In addition, can shorten to determine next time and right The time that power capacitor 11 charges, the further shortening (raising) of machine cycle can be realized.

In addition, in dynamic property tester 1, by being turned on transistor Qhp, carry out selection transistor Objects of the Qdn as switch measure, in transistor Qdn switch measure, from connecting portion Cs towards connecting portion Cd electric current stream Cross reactor L.In addition, by being turned on transistor Qhn, carry out objects of the selection transistor Qdp as switch measure, In transistor Qdp switch measure, the electric current from connecting portion Cd towards connecting portion Cs flows through reactor L.In other words, in electricity Bidirectional current can be flowed in anti-device L.Moreover, in transistor Qdn switch measure, examined in dynamic property tester 1 In the case of the overcurrent for measuring the magnitude of current more than overcurrent threshold value Ref_N, by being turned on transistor Qir, To form touring current path Pn42 in reactor L, transistor Qir and diode Dif.Moreover, accumulate in reactor L Energy flow and be consumed in current path Pn42 as electric current.On the other hand, determined in transistor Qdp switch In, detected in dynamic property tester 1 more than overcurrent threshold value Ref_P the magnitude of current overcurrent in the case of, lead to Crossing is turned on transistor Qif, forms touring electric current road in reactor L, transistor Qif and diode Dir Footpath Pp42.Moreover, the energy accumulated in reactor L flows as electric current and is consumed in current path Pp42.Like this, In the dynamic property tester 1 comprising the transistor Qdp electrically connected in series and transistor Qdn DUT50, Although bidirectional current can be flowed in reactor L, it can prevent more overcurrent from flowing into either direction DUT50.Thereby, it is possible to avoid failure of dynamic property tester 1 etc..As a result, the maintenance such as part replacement can be reduced Frequency, it helps reduce cost.

Diode Dif is transistor Qif fly-wheel diode, and diode Dir is transistor Qir fly-wheel diode.Two Pole pipe Dif is configured as：Its forward direction is to be configured as from connecting portion Cd towards connecting portion Cs direction, diode Dir：It is positive For from connecting portion Cs towards connecting portion Cd direction.Like this, using the fly-wheel diode for protecting transistor Qif, Qir, To form above-mentioned current path Pn42, Pp42, so be capable of the increase of suppression component, and can prevent two-way more Overcurrent flows into DUT50.

In addition, transistor Qdn switch measure in, in the case where detecting overcurrent, by make transistor Qir into For on-state, and transistor Qcf, Qcr is turned into off-state, the electric current road different from current path Pn42 can be cut off Footpath Pn41.Therefore, it is possible to make accumulation prevent circuit 14 (current path Pn42) in overcurrent as electric current in reactor L energy Middle flowing, it can at high speed consume and accumulate in reactor L energy.Similarly, in transistor Qdp switch measure, examining In the case of measuring overcurrent, by being turned on transistor Qif, and turn into transistor Qcf, Qcr and disconnect shape State, the current path Pp41 different from current path Pp42 can be cut off.Therefore, it is possible to make accumulation make in reactor L energy Flowed for electric current in overcurrent prevents circuit 14 (current path Pp42), can at high speed consume and accumulate in reactor L energy Amount.

In addition, the dynamic property tester and dynamic characteristic test method of the present invention are not limited to above-mentioned embodiment party Formula.For example, transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr are not limited to IGBT, it is to allow hand over on-state and break The switch portion of open state.For example, as transistor Qp, Qhp, Qhn, Qif, Qir, Qcf, Qcr, FET can be used (Field Effect Transistor：Field-effect transistor) and other transistors such as bipolar transistor and can be high Relay that quick-action is made etc..By using transistor, state and off-state can be switched at high speed, it is possible to increase include Switch the precision of the dynamic characteristic test of measure.

Alternatively, it is also possible to replace power capacitor 11, the power supply that can be charged using other.In addition, not to be opened In the case of closing for the purpose of the energy regenerating in measure, the power supply that can not be charged can also be used, main switch can also be not provided with Portion 12.In this case, power capacitor 11+terminal and transistor Qhp colelctor electrode, diode Dhp negative electrode, switch The negative electrode electrical connection of SWp one end, transistor Qdp colelctor electrode and diode Ddp, power capacitor 11-terminal with it is brilliant Body pipe Qhn emitter stage, diode Dhn anode, the other end, transistor the Qdn emitter stage and diode for switching SWn Ddn anode electrical connection.

In addition, in the case of for the purpose of carrying out the energy regenerating in switch measure, overcurrent can also be not provided with and prevented Only circuit 14 and at a high speed cut-out circuit 15.In this case, transistor Qhp emitter stage and transistor Qhn colelctor electrode Electrically connected with reactor L one end.

For high speed cuts off circuit 15, in the case of the overcurrent in cutting off N sides switch measure at high speed, at least Transistor Qcf is turned into off-state, in the case of the overcurrent in cutting off P sides switch measure at high speed, at least make Transistor Qcr turns into off-state.In addition, for high speed cuts off circuit 15, N sides switch measure is being cut off at high speed In overcurrent in the case of, in current path Pn41 not with current path Pn42 repeat part, connected with reactor L Setting.In addition, for high speed cuts off circuit 15, the situation of the overcurrent in P sides switch measure is cut off at high speed Under, the part not repeated with current path Pp42 in current path Pp41, it is arranged in series with reactor L.Cut at a high speed Deenergizing 15 can also be for example arranged between DUT50 and reactor L.Led in addition, cutting off circuit 15 at a high speed and possessing to allow hand over The switch portion of logical state and dissengaged positions, such as can also be relay etc..

In addition, overcurrent prevents that circuit 14 from being the structure that can prevent two-way overcurrent.Overcurrent prevents circuit 14 for example can also be reverse blocking IGBT.For preventing circuit 14 more particularly, for overcurrent, from connecting portion Cd courts To on a connecting portion Cs direction, possess the switch portion electrically connected in series and diode, from connecting portion Cs Towards on connecting portion Cd another direction, possess the switch portion electrically connected in series and diode.One It is a direction that the diode in direction, which is configured to its forward direction, and it is another that the diode in another direction, which is configured to its forward direction, Direction.

As shown in figure 22, overcurrent prevents circuit 14 to be for example configured to diode bridge.If illustrating, deform The overcurrent of example prevents circuit 14 from including transistor Qi, diode Di and diode D1~D4.Transistor Qi is IGBT.Crystal Pipe Qi colelctor electrode electrically connects with diode Di negative electrode, and transistor Qi emitter stage electrically connects with diode Di anode.Change Sentence is talked about, and diode Di is the fly-wheel diode electrically connected in parallel with transistor Qi.Transistor Qi colelctor electrode with The negative electrode electrical connection of diode D1 negative electrode and diode D3, transistor Qi emitter stage and diode D2 anode and two Pole pipe D4 anode electrical connection.Diode D1 anode and diode D2 negative electrode are electrically connected to each other, and with transistor Qcr Colelctor electrode, diode Dcr negative electrode and reactor L one end electrical connection.Diode D3 anode and diode D4's Negative electrode is electrically connected to each other, and the other end with reactor L, the other end for switching SWp, the one end for switching SWn and DUT50 O terminals electrically connect.

For example, in Figure 12 step ST34, the electric current that is flowed in current path Pn1 (electric current Ic, Iqp, Iqhp, Iqcf ,-Iqcr, IL, Iqdn) magnitude of current increase and become bigger than the overcurrent threshold value Ref_N of N side, so as to comparator 23 In the case that low level output signal is exported to control device 30, control device 30 receives low electricity according to from comparator 23 This case that flat output signal, detection of excessive current, and signal Sqp, Sqhp is changed to low level from high level.By This, transistor Qcf, Qcr, Qdn are turned on, and transistor in addition turns into off-state.Now, such as Figure 23 institutes Show, form current path Pn41, and the overcurrent inflow current path P n41 flowed in current path Pn1.

Then, signal Sqi is changed to high level by control device 30 from low level.Thus, further transistor Qi It is turned on, as shown in figure 23, is formed touring successively in reactor L, diode D3, transistor Qi and diode D2 Current path Pn43, and a part of inflow current path P n43 of the electric current flowed in current path Pn41.Moreover, because The electric current flowed in current path Pn41 is touring in current path Pn41, so as to energy by transistor Qcf, transistor Qcr, Reactor L, transistor Qdn and diode Dhn resistance components etc. consume, thus its magnitude of current process over time and subtract It is few.Similarly, because the electric current that is flowed in current path Pn43 in current path Pn43 it is touring, so as to energy by reactor L, Diode D3, transistor Qi and diode D2 resistance components etc. consume, thus its magnitude of current process over time and subtract It is few.

In addition, in Figure 14 step ST44, the electric current that is flowed in current path Pp1 (electric current Ic, Iqp, Iqdp ,- IL, Iqcr ,-Iqcf, Iqhn) the magnitude of current increase and become bigger than the overcurrent threshold value Ref_P of P side, and comparator 24 will In the case that low level output signal is exported to control device 30, control device 30 receives low level according to from comparator 24 Output signal this case that, detection of excessive current, signal Sqp, Sqhn is changed to low level from high level.Thus, it is brilliant Body pipe Qcf, Qcr, Qdp are turned on, and transistor in addition turns into off-state.Now, as shown in figure 24, formed Current path Pp41, and the overcurrent inflow current path P p41 flowed in current path Pp1.

Then, signal Sqi is changed to high level by control device 30 from low level.Thus, further transistor Qi It is turned on, as shown in figure 24, is formed touring successively in reactor L, diode D1, transistor Qi and diode D4 Current path Pp43, a part of inflow current path P p43 of the electric current flowed in current path Pp41.Moreover, because in electricity The electric current flowed in flow path Pp41 is touring in current path Pp41, so as to which energy is by reactor L, transistor Qcr, transistor Qcf, diode Dhp and transistor Qdp resistance components etc. consume, thus its magnitude of current process over time and reduce. Similarly, because the electric current that is flowed in current path Pp43 in current path Pp43 it is touring, so as to which energy is by reactor L, two Pole pipe D1, transistor Qi and diode D4 resistance components etc. consume, thus its magnitude of current process over time and reduce. In the overcurrent so formed prevents circuit 14, can also carry out the two-way overcurrent of dynamic property tester 1 prevents.

In addition, as shown in Figure 25 (a), overcurrent prevent circuit 14 by transistor Qif, Qir and diode Dif, In the case that Dir is formed, in the switch measure of N sides, before transistor Qp, Qhp is turned into off-state, make transistor Qir is turned on, and does not also flow the short circuit current not via reactor L.Like this, prevent circuit 14 by crystalline substance in overcurrent In the case that body pipe Qif, Qir and diode Dif, Dir are formed, transistor Qp, Qhp is set to turn into the opportunity of off-state and make The order on the opportunity that transistor Qir is turned on is arbitrary.Also it is identical in the switch measure of P sides.

On the other hand, as shown in Figure 25 (b), in the case where overcurrent prevents that circuit 14 is made up of diode bridge, in N In the switch measure of side, if before making transistor Qp, Qhp turn into off-state, transistor Qi is turned on, then is formed From power capacitor 11+terminal passes through transistor Qp, transistor Qhp, transistor Qcf, transistor Qcr, diode D1, crystal Pipe Qi, diode D4 and transistor Qdn and return to power capacitor 11-the current path Pn5 of terminal.Due to electric current Path P n5 is the current path not via reactor L, so flowing short circuit current in dynamic property tester 1.Therefore, In the case where overcurrent prevents that circuit 14 is made up of diode bridge, when making overcurrent prevent that circuit 14 from acting, it is necessary to make After transistor Qp, Qhp turn into off-state, it is turned on transistor Qi.Also it is identical in the switch measure of P sides.

Like this, the situation that circuit 14 is made up of transistor Qif, Qir and diode Dif, Dir is prevented in overcurrent Under, transistor Qif, Qir are electrically connected in series, so by make transistor Qif, Qir any one turn into connect shape State, the electric current in only one direction prevent from flowing in circuit 14 in overcurrent.Therefore, in the switch measure of N sides, even in making crystal Pipe Qp, Qhp are turned on transistor Qir before turning into off-state, and short-circuit electricity will not be also flowed in transistor Qdn Stream, in the switch measure of P sides, shape is connected even in making transistor Qp, Qhn before turn into transistor Qif as off-state State, short circuit current will not be also flowed in transistor Qdp.Therefore, it is possible to reduce the opportunity for making overcurrent prevent circuit 14 from acting Restriction, control can be simplified.

In addition, DUT50 is not limited to the power semiconductor modular of the types of 2in 1, it is to include transistor Qdp and transistor Qdn equipment.For example, DUT50 can also be the types of 4in 1, the types of 6in 1 and the type constant power semiconductor modules of 8in 1.

Figure 26 is the circuit diagram for the other variations for representing dynamic property tester.Dynamic characteristic test shown in Figure 26 Device 1A is the power semiconductor modular for using the types of 6in 1 as the dynamic property tester in the case of DUT.Dynamic characteristic Experimental rig 1A compared with dynamic property tester 1, replace DUT50 and using DUT50A as by the point of testing equipment with And the point for replacing hookup 10 and possessing hookup 10A is different.Hookup 10A is compared with hookup 10, also The point for possessing selection circuit 17 is different.In addition, in fig. 26, omit the diagram of overcurrent sensing circuit 20.

DUT50A is the power semiconductor modular of the types of 6in 1 comprising 6 transistors.Specifically, DUT50A is in parallel DUT50 transistor Qdp, Qdn and diode Ddp, Ddn group with 3 phases (U, V, W phase) part.In other words, for For DUT50A, being used as U phases has transistor Qdpu, Qdnu and diode Ddpu, Ddnu (the 1st diode, the 2nd two pole Pipe), being used as V phases has transistor Qdpv, Qdnv and diode Ddpv, Ddnv (the 1st diode, the 2nd diode), as W phases, which are used, has transistor Qdpw, Qdnw and diode Ddpw, Ddnw.DUT50A has P terminals, U terminals, V terminals, W terminals And N-terminal.P terminals electrically connect with transistor Qdpu, Qdpv, Qdpw colelctor electrode, N-terminal and transistor Qdnu, Qdnv, Qdnw emitter stage electrical connection.U terminals electrically connect with transistor Qdpu emitter stage and transistor Qdnu colelctor electrode, V ends Son electrically connects with transistor Qdpv emitter stage and transistor Qdnv colelctor electrode, the emitter stage of W terminals and transistor Qdpw And transistor Qdnw colelctor electrode electrical connection.For example, DUT50A is used for the inverter circuit of 3 phases, transistor Qdpu can be used In the upper arm of U phases, transistor Qdnu can be used in the underarm of U phases, and transistor Qdpv can be used in the upper arm of V phases, transistor Qdnv can be used in the underarm of V phases, and transistor Qdpw can be used in the upper arm of W phases, and transistor Qdnw can be used under W phases Arm.

Selection circuit 17 is for selecting the progress in transistor Qdp, Qdn of 3 phases (U, V, W phase) that DUT50A included Switch transistor Qdp, Qdn of the phase of measure circuit.Selection circuit 17 includes switch SWu, SWv, SWw.Switch SWu, SWv, SWw is relay.Switch SWu, SWv, SWw one end are electrically connected to each other, and the other end with reactor L, transistor Qir Colelctor electrode, diode Dir negative electrode, switch SWp the other end and switch SWn one end electrical connection.Switch SWu, SWv, SWw The other end electrically connected respectively with DUT50A U, V, W terminal.

In the dynamic property tester 1A so formed, control device 30 further by transistor Qdpu, Qdnu, Qdpv, Qdnv, Qdpw, Qdnw export signal Sqdpu, Sqdnu, Sqdpv, Sqdnv, Sqdpw, Sqdnw respectively, To switch the on-state of each transistor and off-state.In addition, control device 30 is defeated by distinguishing switch SWu, SWv, SWw Go out relay signal Sswu, Sswv, Ssww, to switch the on-state of each switch and off-state.Even in DUT be other classes In the case of the power semiconductor modular of type, it can also be formed in the same manner as dynamic property tester 1A.

Description of reference numerals：1st, 1A ... dynamic property testers；11 ... power capacitors (power supply)；12 ... main switches Portion；13 ... selection circuits；30 ... control devices；50th, 50A ... DUT (by testing equipment)；Cd ... connecting portions (the 1st connecting portion)； Cs ... connecting portions (the 2nd connecting portion)；Ddn, Ddnu, Ddnv, Ddnw ... diode (the 2nd diode)；Ddp、Ddpu、Ddpv、 Ddpw ... diodes (the 1st diode)；Dhn ... diodes (the 4th diode)；Dhp ... diodes (the 3rd diode)；L ... reactance Device；Qdn, Qdnu, Qdnv, Qdnw ... transistor (the 2nd semiconductor)；(the 1st half leads Qdp, Qdpu, Qdpv, Qdpw ... transistor Body)；Qhn ... transistors (the 2nd switch portion)；Qhp ... transistors (the 1st switch portion)；Qp ... transistors (the 3rd switch portion).

Claims

1. a kind of dynamic property tester, carried out by the dynamic property tester of the dynamic characteristic test of testing equipment, It is described by testing equipment include the 1st semiconductor that electrically connects in series and the 2nd semiconductor, in parallel with it is described 1st diode of the 1st semi-conductor electricity connection and the 2nd diode being connected in parallel with the 2nd semi-conductor electricity, The dynamic property tester possesses：

The power supply that can be charged, supply the electric current for the dynamic characteristic test；

Reactor, turn into the load of the 1st semiconductor and the 2nd semiconductor；

Selection circuit, have the 1st switch portion that electrically connects in series and the 2nd switch portion, in parallel with it is described 3rd diode of the 1st switch portion electrical connection and the 4th diode electrically connected in parallel with the 2nd switch portion, For selecting any one object determined as switch in the 1st semiconductor and the 2nd semiconductor；

3rd switch portion, switch supply from the power supply to the 1st semiconductor or the electric current of the 2nd semiconductor and Cut-out；And

Control device, on-state and disconnection to the 1st switch portion, the 2nd switch portion and the 3rd switch portion State switches over control,

The 1st connecting portion that 1st semiconductor and the 2nd semi-conductor electricity are connected and by the 1st switch portion and institute The 2nd connecting portion for stating the electrical connection of the 2nd switch portion electrically connects via the reactor,

The positive terminal of the power supply electrically connects with the negative electrode of the 1st diode and the negative electrode of the 3rd diode,

The negative terminal of the power supply electrically connects with the anode of the 2nd diode and the anode of the 4th diode,

The control device makes the 2nd switch portion and the 3rd switch when starting the switch measure of the 1st semiconductor Portion is turned on, and turns into the 2nd switch portion terminating this case according to the switch of the 1st semiconductor measure After off-state, the 3rd switch portion is set to turn into off-state.

2. dynamic property tester according to claim 1, wherein,

The control device makes the 1st switch portion and the 3rd switch when starting the switch measure of the 2nd semiconductor Portion is turned on, and turns into the 1st switch portion terminating this case according to the switch of the 2nd semiconductor measure After off-state, the 3rd switch portion is set to turn into off-state.

3. the dynamic property tester according to claims 1 or 2, wherein,

1st switch portion and the 2nd switch portion are transistors.

4. a kind of dynamic characteristic test method, carried out by the dynamic characteristic test method of the dynamic characteristic test of testing equipment, It is described by testing equipment include the 1st semiconductor that electrically connects in series and the 2nd semiconductor, in parallel with it is described 1st diode of the 1st semi-conductor electricity connection and the 2nd diode being connected in parallel with the 2nd semi-conductor electricity, The dynamic characteristic test method includes：

By making with the 1st switch portion that electrically connects in series and the 2nd switch portion, in parallel with the described 1st The choosing of the 3rd diode and the 4th diode electrically connected in parallel with the 2nd switch portion of switch portion electrical connection The 2nd switch portion for selecting circuit is turned on, to select object of the 1st semiconductor as switch measure, and By being turned on the 3rd switch portion of the power electric connection with that can charge in series, led to the described 1st half Body supplies electric current, to carry out the step of switch of the 1st semiconductor determines；

By the end determined according to the switch of the 1st semiconductor, and the 2nd switch portion is set to turn into off-state, next pair The step of energy used in the switch measure of the 1st semiconductor is reclaimed；And

After the step of being reclaimed to the energy used in the switch measure of the 1st semiconductor, the described 3rd is set to open Pass portion turns into the step of off-state,

The 1st connecting portion that 1st semiconductor and the 2nd semi-conductor electricity are connected and by the 1st switch portion and institute The 2nd connecting portion for stating the electrical connection of the 2nd switch portion electrically connects via reactor,

The negative terminal of the power supply electrically connects with the anode of the 2nd diode and the anode of the 4th diode.

5. dynamic characteristic test method according to claim 4, wherein, also include：

By being turned on the 1st switch portion of the selection circuit, to select the 2nd semiconductor as switch The object of measure, and by being turned on the 3rd switch portion, electric current is supplied to the 2nd semiconductor, to carry out The step of switch measure of 2nd semiconductor；

By the end determined according to the switch of the 2nd semiconductor, and the 1st switch portion is set to turn into off-state, next pair The step of energy used in the switch measure of the 2nd semiconductor is reclaimed；And

After the step of being reclaimed to the energy used in the switch measure of the 2nd semiconductor, the described 3rd is set to open Pass portion turns into the step of off-state.