CN107871799A - 一种正向失配四结太阳能电池 - Google Patents
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Abstract
本发明涉及太阳能电池技术领域,提供一种正向失配四结太阳能电池,包括Ge衬底和帽层,其中,从所述Ge衬底到所述帽层依次设有Ga0.5In0.5P成核层、Ga0.99In0.01As缓冲层、第一隧道结、(AlGa)1‑xInxAs渐变缓冲层、第一(AlGa)1‑ xInxAs/(AlGa)1‑yInyAs DBR、Ga1‑xInxAs电池、第二隧道结、第二(AlGa)1‑xInxAs/(AlGa)1‑yInyAs DBR、(AlGa)1‑xInxAs电池、第三隧道结以及(AlGa)1‑yInyP电池,通过优化电池带隙在太阳光谱中的分布,调整三个子电池的组分,提高太阳能电池的光电转换效率。
Description
技术领域
本发明属于太阳能电池技术领域,尤其涉及一种正向失配四结太阳能电池。
背景技术
随着生产力的飞速发展,全世界对能源的需求正在猛烈地增长,经济发展对能源的依赖越来越严重,其中太阳能是一种取之不尽用之不竭的绿色能源,于是太阳电池受到人们越来越多的重视。
基于晶格匹配设计思想的正向匹配三结太阳能电池,其材料选择为Ga0.5In0.5P、Ga0.99In0.01As和Ge,这三种材料在晶格常数上匹配好,能获得更好的外延形貌,材料的禁带宽度在AM0条件下能够获得较好的匹配,但其转换效率目前已经几乎达到极限,继续提高的空间有限。
发明内容
本发明的目的在于提供一种正向失配四结太阳能电池,旨在解决现有技术中正向匹配三结太阳能电池的转换效率目前已经几乎达到极限,继续提高的空间有限的问题。
本发明是这样实现的,一种正向失配四结太阳能电池,所述正向失配四结太阳能电池包括Ge衬底和帽层,其中,从所述Ge衬底到所述帽层依次设有Ga0.5In0.5P成核层、Ga0.99In0.01As缓冲层、第一隧道结、(AlGa)1-xInxAs渐变缓冲层、第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR、Ga1-xInxAs电池、第二隧道结、第二(AlGa)1-xInxAs/(AlGa)1-yInyAsDBR、(AlGa)1-xInxAs电池、第三隧道结以及(AlGa)1-yInyP电池;
所述第一隧道结包括n型掺杂的n+-GaAs层和p型掺杂的p+-AlGaAs层,所述n型掺杂的n+-GaAs层的浓度和所述p型掺杂的p+-AlGaAs层的浓度均为1×1019-1×1021cm-3;
所述(AlGa)1-xInxAs渐变缓冲层包括p型掺杂层,所述p型掺杂层的浓度为1×1017-1×1019cm-3,厚度为500nm-4000nm,0.01≤x≤0.4;
所述第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR包括p型掺杂层,所述p型掺杂层的浓度为1×1017-1×1019cm-3,在每个周期内,(AlGa)1-xInxAs和(AlGa)1-yInyAs的厚度均为30nm-300nm,0.01≤x≤0.4,0.01≤y≤0.4;
所述Ga1-xInxAs电池包括n型掺杂的n-Ga1-xInxAs发射区层和p型掺杂的p-Ga1- xInxAs基区层,所述n型掺杂的n-Ga1-xInxAs发射区层的浓度为1×1017-1×1019cm-3,p型掺杂的p-Ga1-xInxAs基区层的浓度为1×1016-1×1018cm-3,所述n型掺杂的n-Ga1-xInxAs发射区层的厚度均为50nm-300nm,所述p型掺杂的p-Ga1-xInxAs基区层的厚度为500nm-3000nm,0.01≤x≤0.4;
所述第二隧道结包括n型掺杂的n+-Ga1-yInyP层和p型掺杂的p+-(AlGa)1-xInxAs层,所述n型掺杂的n+-Ga1-yInyP层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,所述p型掺杂的p+-(AlGa)1-xInxAs层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,其中,0.01≤x≤0.4,0.4≤y≤0.9;
所述第二(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR包括p型掺杂层,所述p型掺杂层的浓度为1×1017-1×1019cm-3,每个周期内,(AlGa)1-xInxAs的厚度为30nm-300nm,(AlGa)1-yInyAs的厚度范围为30nm-300nm,其中,0.01≤x≤0.4,0.01≤y≤0.4;
所述(AlGa)1-xInxAs电池包括n型掺杂的n-(AlGa)1-xInxAs发射区层和p型掺杂的p-(AlGa)1-xInxAs基区层,所述n型掺杂的n-(AlGa)1-xInxAs发射区层的浓度为1×1017-1×1019cm-3,厚度为50nm-300nm;所述p型掺杂的p-(AlGa)1-xInxAs基区层的浓度为1×1016-1×1018cm-3,厚度为500nm-3000nm,0.01≤x≤0.4;
所述第三隧道结包括n型掺杂的n+-(AlGa)1-yInyP层和p型掺杂的p+-(AlGa)1- xInxAs层,所述n型掺杂的n+-(AlGa)1-yInyP层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,所述p型掺杂的p+-(AlGa)1-xInxAs层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,其中,0.01≤x≤0.4,0.4≤y≤0.9;
所述(AlGa)1-yInyP电池包括n型掺杂的n-(AlGa)1-yInyP发射区层和p型掺杂的p-(AlGa)1-yInyP基区层,所述n型掺杂的n-(AlGa)1-yInyP发射区层的浓度为1×1017-1×1019cm-3,厚度范围为10nm-100nm,所述p型掺杂的p-(AlGa)1-yInyP基区层的浓度为1×1016-1×1018cm-3,厚度为100nm-1000nm,其中,0.01≤x≤0.4,0.4≤y≤0.9。
作为一种改进的方案,所述第一隧道结的厚度为10nm-100nm,生长温度为550-700度。
作为一种改进的方案,所述Ga0.99In0.01As缓冲层的生长温度为600-750度,厚度为200nm-2000nm。
作为一种改进的方案,所述(AlGa)1-xInxAs电池的n型掺杂的n-(AlGa)1-xInxAs发射区层和p型掺杂的p-(AlGa)1-xInxAs基区层的生长温度为550-700度。
作为一种改进的方案,所述Ga0.5In0.5P成核层的生长温度为550–700℃,厚度为50-500nm。
作为一种改进的方案,所述(AlGa)1-xInxAs渐变缓冲层、第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR、第二(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR和Ga1-xInxAs电池的生长温度均为600-750度。
作为一种改进的方案,所述第二隧道结的生长温度为550-700度。
作为一种改进的方案,所述帽层包括n型掺杂的n+-Ga1-xInxAs层,浓度为1×1018-1×1021cm-3,厚度为50nm-1000nm,生长温度为550–700℃,0.01≤x≤0.4。
由于正向失配四结太阳能电池包括Ge衬底和帽层,其中,从所述Ge衬底到所述帽层依次设有Ga0.5In0.5P成核层、Ga0.99In0.01As缓冲层、第一隧道结、(AlGa)1-xInxAs渐变缓冲层、第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR、Ga1-xInxAs电池、第二隧道结、第二(AlGa)1- xInxAs/(AlGa)1-yInyAs DBR、(AlGa)1-xInxAs电池、第三隧道结以及(AlGa)1-yInyP电池,通过优化电池带隙在太阳光谱中的分布,调整三个子电池的组分,提高太阳能电池的光电转换效率。
附图说明
图1是本发明提供的正向失配四结太阳能电池的结构示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
图1示出了本发明提供的正向失配四结太阳能电池的结构示意图,为了便于说明,图中仅给出了与本发明相关的部分。
正向失配四结太阳能电池包括Ge衬底和帽层,其中,从所述Ge衬底到所述帽层依次设有Ga0.5In0.5P成核层、Ga0.99In0.01As缓冲层、第一隧道结、(AlGa)1-xInxAs渐变缓冲层、第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR、Ga1-xInxAs电池、第二隧道结、第二(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR、(AlGa)1-xInxAs电池、第三隧道结以及(AlGa)1-yInyP电池;
Ga0.5In0.5P成核层,其n型掺杂剂为Si、Se或Te,生长温度为550–700℃,厚度为50-500nm,通过该层中磷原子的扩散形成n-Ge层,从而形成锗电池;
Ga0.99In0.01As缓冲层,其n型掺杂剂为Si、Se或Te,生长温度为600-750度,厚度为200nm-2000nm;
第一隧道结包括n型掺杂的n+-GaAs层和p型掺杂的p+-AlGaAs层,n型掺杂的n+-GaAs层的掺杂剂为Si、Se或Te,p型掺杂的p+-AlGaAs层的掺杂剂为Zn、Mg或C,所述n型掺杂的n+-GaAs层的浓度和所述p型掺杂的p+-AlGaAs层的浓度均为1×1019-1×1021cm-3,其中,该第一隧道结的厚度为10nm-100nm,生长温度为550-700度;
所述(AlGa)1-xInxAs渐变缓冲层包括p型掺杂层,In的组分从下到上从0.01线性或阶梯渐变到x,p型掺杂层的掺杂剂为Zn、Mg或C,所述p型掺杂层的浓度为1×1017-1×1019cm-3,厚度为500nm-4000nm,0.01≤x≤0.4,其生长温度为600-750度;
第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR包括p型掺杂层,p型掺杂层的掺杂剂为Zn、Mg或C,所述p型掺杂层的浓度为1×1017-1×1019cm-3,周期数为5-30个,在每个周期内,(AlGa)1-xInxAs和(AlGa)1-yInyAs的厚度均为30nm-300nm,其生长温度为600-750度,0.01≤x≤0.4,0.01≤y≤0.4,;
Ga1-xInxAs电池包括n型掺杂的n-Ga1-xInxAs发射区层和p型掺杂的p-Ga1-xInxAs基区层,n型掺杂的n-Ga1-xInxAs发射区层的掺杂剂为Si、Se或Te,p型掺杂的p-Ga1-xInxAs基区层的掺杂剂为Zn、Mg或C,n型掺杂的n-Ga1-xInxAs发射区层的浓度为1×1017-1×1019cm-3,p型掺杂的p-Ga1-xInxAs基区层的浓度为1×1016-1×1018cm-3,所述n型掺杂的n-Ga1-xInxAs发射区层的厚度均为50nm-300nm,所述p型掺杂的p-Ga1-xInxAs基区层的厚度为500nm-3000nm,其生长温度为600-750度,其中,0.01≤x≤0.4;
第二隧道结包括n型掺杂的n+-Ga1-yInyP层和p型掺杂的p+-(AlGa)1-xInxAs层,n型掺杂的n+-Ga1-yInyP层的掺杂剂为Si、Se或Te,p型掺杂的p+-(AlGa)1-xInxAs层的掺杂剂为Zn、Mg或C,所述n型掺杂的n+-Ga1-yInyP层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,所述p型掺杂的p+-(AlGa)1-xInxAs层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,其生长温度为550-700度,其中,0.01≤x≤0.4,0.4≤y≤0.9;
第二(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR包括p型掺杂层,p型掺杂层的掺杂剂为Zn、Mg或C,所述p型掺杂层的浓度为1×1017-1×1019cm-3,周期数为5-30个,每个周期内,(AlGa)1-xInxAs的厚度为30nm-300nm,(AlGa)1-yInyAs的厚度范围为30nm-300nm,其生长温度为600-750度,其中,0.01≤x≤0.4,0.01≤y≤0.4;
(AlGa)1-xInxAs电池包括n型掺杂的n-(AlGa)1-xInxAs发射区层和p型掺杂的p-(AlGa)1-xInxAs基区层,n型掺杂的n-(AlGa)1-xInxAs发射区层的掺杂剂为Si、Se或Te,p型掺杂的p-(AlGa)1-xInxAs基区层的掺杂剂为Zn、Mg或C,所述n型掺杂的n-(AlGa)1-xInxAs发射区层的浓度为1×1017-1×1019cm-3,厚度为50nm-300nm;所述p型掺杂的p-(AlGa)1-xInxAs基区层的浓度为1×1016-1×1018cm-3,厚度为500nm-3000nm,0.01≤x≤0.4;
第三隧道结包括n型掺杂的n+-(AlGa)1-yInyP层和p型掺杂的p+-(AlGa)1-xInxAs层,n型掺杂的n+-(AlGa)1-yInyP层的掺杂剂为Si、Se或Te,p型掺杂的p+-(AlGa)1-xInxAs层的掺杂剂为Zn、Mg或C,所述n型掺杂的n+-(AlGa)1-yInyP层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,所述p型掺杂的p+-(AlGa)1-xInxAs层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,其中,0.01≤x≤0.4,0.4≤y≤0.9;
(AlGa)1-yInyP电池包括n型掺杂的n-(AlGa)1-yInyP发射区层和p型掺杂的p-(AlGa)1-yInyP基区层,n型掺杂的n-(AlGa)1-yInyP发射区层的掺杂剂为Si、Se或Te,p型掺杂的p-(AlGa)1-yInyP基区层的掺杂剂为Zn、Mg或C,所述n型掺杂的n-(AlGa)1-yInyP发射区层的浓度为1×1017-1×1019cm-3,厚度范围为10nm-100nm,所述p型掺杂的p-(AlGa)1-yInyP基区层的浓度为1×1016-1×1018cm-3,厚度为100nm-1000nm,其中,0.01≤x≤0.4,0.4≤y≤0.9。
在本发明实施例中,帽层包括n型掺杂的n+-Ga1-xInxAs层,掺杂剂为Si、Se或Te,浓度为1×1018-1×1021cm-3,厚度为50nm-1000nm,生长温度为550–700℃,0.01≤x≤0.4。
在本发明实施例中,采用第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR和第二(AlGa)1- xInxAs/(AlGa)1-yInyAs DBR的结构,可以反射Ga1-xInxAs电池和(AlGa)1-xInxAs电池的光子,从而实现被两个子电池重新吸收,提高量子效率和抗辐照能力。
在本发明实施例中,正向失配四结太阳能电池包括Ge衬底和帽层,其中,从所述Ge衬底到所述帽层依次设有Ga0.5In0.5P成核层、Ga0.99In0.01As缓冲层、第一隧道结、(AlGa)1- xInxAs渐变缓冲层、第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR、Ga1-xInxAs电池、第二隧道结、第二(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR、(AlGa)1-xInxAs电池、第三隧道结以及(AlGa)1- yInyP电池,其结构简单,便于制作,同时通过优化电池带隙在太阳光谱中的分布,调整三个子电池的组分,提高太阳能电池的光电转换效率。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (8)
1.一种正向失配四结太阳能电池,其特征在于,所述正向失配四结太阳能电池包括Ge衬底和帽层,其中,从所述Ge衬底到所述帽层依次设有Ga0.5In0.5P成核层、Ga0.99In0.01As缓冲层、第一隧道结、(AlGa)1-xInxAs渐变缓冲层、第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR、Ga1- xInxAs电池、第二隧道结、第二(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR、(AlGa)1-xInxAs电池、第三隧道结以及(AlGa)1-yInyP电池;
所述第一隧道结包括n型掺杂的n+-GaAs层和p型掺杂的p+-AlGaAs层,所述n型掺杂的n+-GaAs层的浓度和所述p型掺杂的p+-AlGaAs层的浓度均为1×1019-1×1021cm-3;
所述(AlGa)1-xInxAs渐变缓冲层包括p型掺杂层,所述p型掺杂层的浓度为1×1017-1×1019cm-3,厚度为500nm-4000nm,0.01≤x≤0.4;
所述第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR包括p型掺杂层,所述p型掺杂层的浓度为1×1017-1×1019cm-3,在每个周期内,(AlGa)1-xInxAs和(AlGa)1-yInyAs的厚度均为30nm-300nm,0.01≤x≤0.4,0.01≤y≤0.4;
所述Ga1-xInxAs电池包括n型掺杂的n-Ga1-xInxAs发射区层和p型掺杂的p-Ga1-xInxAs基区层,所述n型掺杂的n-Ga1-xInxAs发射区层的浓度为1×1017-1×1019cm-3,p型掺杂的p-Ga1-xInxAs基区层的浓度为1×1016-1×1018cm-3,所述n型掺杂的n-Ga1-xInxAs发射区层的厚度均为50nm-300nm,所述p型掺杂的p-Ga1-xInxAs基区层的厚度为500nm-3000nm,0.01≤x≤0.4;
所述第二隧道结包括n型掺杂的n+-Ga1-yInyP层和p型掺杂的p+-(AlGa)1-xInxAs层,所述n型掺杂的n+-Ga1-yInyP层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,所述p型掺杂的p+-(AlGa)1-xInxAs层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,其中,0.01≤x≤0.4,0.4≤y≤0.9;
所述第二(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR包括p型掺杂层,所述p型掺杂层的浓度为1×1017-1×1019cm-3,每个周期内,(AlGa)1-xInxAs的厚度为30nm-300nm,(AlGa)1-yInyAs的厚度范围为30nm-300nm,其中,0.01≤x≤0.4,0.01≤y≤0.4;
所述(AlGa)1-xInxAs电池包括n型掺杂的n-(AlGa)1-xInxAs发射区层和p型掺杂的p-(AlGa)1-xInxAs基区层,所述n型掺杂的n-(AlGa)1-xInxAs发射区层的浓度为1×1017-1×1019cm-3,厚度为50nm-300nm;所述p型掺杂的p-(AlGa)1-xInxAs基区层的浓度为1×1016-1×1018cm-3,厚度为500nm-3000nm,0.01≤x≤0.4;
所述第三隧道结包括n型掺杂的n+-(AlGa)1-yInyP层和p型掺杂的p+-(AlGa)1-xInxAs层,所述n型掺杂的n+-(AlGa)1-yInyP层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,所述p型掺杂的p+-(AlGa)1-xInxAs层的浓度为1×1019-1×1021cm-3,厚度为10nm-100nm,其中,0.01≤x≤0.4,0.4≤y≤0.9;
所述(AlGa)1-yInyP电池包括n型掺杂的n-(AlGa)1-yInyP发射区层和p型掺杂的p-(AlGa)1-yInyP基区层,所述n型掺杂的n-(AlGa)1-yInyP发射区层的浓度为1×1017-1×1019cm-3,厚度范围为10nm-100nm,所述p型掺杂的p-(AlGa)1-yInyP基区层的浓度为1×1016-1×1018cm-3,厚度为100nm-1000nm,其中,0.01≤x≤0.4,0.4≤y≤0.9。
2.根据权利要求1所述的正向失配四结太阳能电池,其特征在于,所述第一隧道结的厚度为10nm-100nm,生长温度为550-700度。
3.根据权利要求1所述的正向失配四结太阳能电池,其特征在于,所述Ga0.99In0.01As缓冲层的生长温度为600-750度,厚度为200nm-2000nm。
4.根据权利要求1所述的正向失配四结太阳能电池,其特征在于,所述(AlGa)1-xInxAs电池的n型掺杂的n-(AlGa)1-xInxAs发射区层和p型掺杂的p-(AlGa)1-xInxAs基区层的生长温度为550-700度。
5.根据权利要求1所述的正向失配四结太阳能电池,其特征在于,所述Ga0.5In0.5P成核层的生长温度为550–700℃,厚度为50-500nm。
6.根据权利要求1所述的正向失配四结太阳能电池,其特征在于,所述(AlGa)1-xInxAs渐变缓冲层、第一(AlGa)1-xInxAs/(AlGa)1-yInyAs DBR、第二(AlGa)1-xInxAs/(AlGa)1-yInyAsDBR和Ga1-xInxAs电池的生长温度均为600-750度。
7.根据权利要求1所述的正向失配四结太阳能电池,其特征在于,所述第二隧道结的生长温度为550-700度。
8.根据权利要求1所述的正向失配四结太阳能电池,其特征在于,所述帽层包括n型掺杂的n+-Ga1-xInxAs层,浓度为1×1018-1×1021cm-3,厚度为50nm-1000nm,生长温度为550–700℃,0.01≤x≤0.4。
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