CN107871792B - Photovoltaic cell and corresponding method for measuring screen printing plate, sheet resistance and/or contact resistivity - Google Patents
Photovoltaic cell and corresponding method for measuring screen printing plate, sheet resistance and/or contact resistivity Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000007650 screen-printing Methods 0.000 title abstract description 7
- 238000012360 testing method Methods 0.000 claims abstract description 210
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000005259 measurement Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000007639 printing Methods 0.000 description 15
- 239000000523 sample Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 13
- 239000011295 pitch Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005245 sintering Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention provides a photovoltaic cell and a corresponding method for measuring screen printing plate, sheet resistance and/or contact resistivity, relating to the technical field of photovoltaic cells, wherein the photovoltaic cell for measuring metal-semiconductor contact resistivity comprises M test areas arranged from inside to outside, and at least one group of test electrodes which are arranged in parallel and at intervals by N rectangular electrodes are arranged in each test area; wherein M is more than or equal to 2; n is more than or equal to 3. The sheet resistance and the contact resistivity of the photovoltaic cell can be tested by using TLM test samples in the prior art, so that the technical problem that the sheet resistance and the contact resistivity of the photovoltaic cell are not accurate enough is solved, and the effect of improving the testing accuracy is achieved.
Description
Technical Field
The invention relates to the technical field of photovoltaic cells, in particular to a photovoltaic cell and a corresponding method for measuring screen printing plate, sheet resistance and/or contact resistivity.
Background
In the solar cell process, a sintering process is performed after the paste is printed, and the primary purpose of sintering is to remove moisture in the paste, solidify the paste and coagulate the paste into a metal electrode with low resistivity; and secondly, the electrode and the semiconductor silicon wafer form good ohmic contact, so that the filling factor loss of the battery is reduced, and the efficiency of the battery is improved. The contact resistivity of electrodes and semiconductor wafers is usually measured in a manner that evaluates the contact of the electrodes with the wafers, the smaller the contact resistivity, the better the performance of the cell.
The contact resistivity is generally related to slurry components, sintering temperature and the like, and accurate measurement of the contact resistivity is beneficial to helping solar cell production enterprises optimize the slurry components and the sintering temperature so as to reduce the contact resistance, improve the filling factor of the cell and finally achieve the aim of improving the efficiency of the cell.
The main method for testing contact resistivity is a transmission line method (TLM method), which is to manufacture a battery piece by printing special electrodes on a silicon wafer, wherein the electrode structure of the battery piece is shown in figure 1 and comprises a series of parallel rectangular electrodes with different pitches and arranged at intervals. The test steps are generally as follows: i) The spacing L between adjacent rectangular electrodes is measured in turn and is respectively marked as L 12 ，L 23 ，……，L （n-1）n And testing the resistance R between adjacent rectangular electrodes, respectively denoted as R 12 ，R 23 ，……，L （N-1）N And a test electrode length W; ii) drawing by taking L as an abscissa and R as an ordinate, and linearly fitting to obtain a fitting straight line, thereby obtaining a slope A and an intercept B of the fitting straight line; 3) Obtaining rho according to a calculation formula of the contact resistivity c =(A*W/2） 2 *W 2 /R sheet 。
However, according to the actual performance test of the battery piece, the test result obtained by the TLM method can only reflect the contact level at the electrode position, but cannot reflect the average contact level of the whole battery piece.
In view of this, the present invention has been made.
Disclosure of Invention
The first object of the present invention is to provide a photovoltaic cell for measuring metal-semiconductor contact resistivity, so as to alleviate the technical problem that the sheet resistance and contact resistivity of the cell tested by using the TLM test sample in the prior art are not accurate enough.
The second aim of the invention is to provide a screen printing plate which is used for preparing the photovoltaic cell.
The third object of the invention is to provide a method for measuring sheet resistance and/or contact resistivity, which can be used for testing the sheet resistance and the contact resistivity more accurately.
In order to achieve the above object of the present invention, the following technical solutions are specifically adopted:
the surface of the photovoltaic cell comprises M test areas which are arranged from inside to outside, and at least one group of test electrodes which are arranged in a parallel interval mode by N rectangular electrodes are arranged in each test area;
wherein M is more than or equal to 2; n is more than or equal to 3.
Further, the M test areas are adjacently arranged in sequence from inside to outside, the first test area is a test area formed by a character shape, and the second test area to the Mth test area are annular test areas formed by a character shape.
Further, the areas of the M test areas are equal.
Further, the edge profiles of the M test areas are square.
Further, the outer border of the mth test area has a side length ofWherein L is c Is the side length of the photovoltaic cell.
Further, the test electrodes in different test areas are symmetrically arranged at least with one symmetry axis of the photovoltaic cell.
Further, the width of the rectangular electrode is 0.1-2mm;
preferably, the length of the rectangular electrode is less than the boundary of the test area;
preferably, the spacing of the rectangular electrodes is 0.2-100mm;
preferably, the difference between the pitches of the rectangular electrodes is 0.2-20mm;
preferably, the number of the rectangular electrodes is 4-20.
And the printing pattern of the screen is matched with the pattern of the photovoltaic cell.
The method for measuring the sheet resistance and/or the contact resistivity comprises the steps of respectively measuring the sheet resistance and/or the contact resistivity in each corresponding test area by using the test electrode in the photovoltaic cell, and taking an average value after measurement to obtain the sheet resistance and/or the contact resistivity of the photovoltaic cell;
or alternatively, the first and second heat exchangers may be,
the contact resistivity in each corresponding test area is measured by the test electrode, and then the formula M/ρ is used c =1/ρ c1 +1/ρ c2 +1/ρ c3 +1/ρ c4 +……1/ρ cM Calculating to obtain the contact resistivity rho of the whole battery piece c ，ρ c1 、ρ c2 、ρ c3 、ρ c4 、……ρ cM Respectively corresponding to the average contact resistivity of each test area.
Further, before testing, the corresponding area of each group of testing electrodes is cut along the edge of the rectangular electrode in the length direction by using a laser slicing method, and then the sheet resistance and/or the contact resistivity are measured.
Compared with the prior art, the invention has the following beneficial effects:
when a TLM method is adopted to prepare a test sample, only a group of test electrodes are printed at the central position of the silicon wafer, and the central contact doping source of the silicon wafer is less due to the position relation of the wafer boat in the diffusion process, and Fang Zugao is diffused; the edge of the silicon wafer is contacted with a plurality of doping sources, and the diffusion sheet resistance is low, so that the whole silicon wafer has the phenomenon of uneven diffusion, the sheet resistances at different positions are different, and the sheet resistances and the contact resistances at different positions of the battery piece are relatively large in difference, so that the sheet resistances and the contact resistances obtained by using the conventional TLM test sample cannot represent the actual values of the sheet resistances and the contact resistances of the whole battery piece. According to the photovoltaic cell, the M test areas are arranged from inside to outside, so that different test areas comprise areas with different diffusion concentrations, measurement can be performed in a plurality of areas with different diffusion concentrations, and finally, the sheet resistance and the contact resistivity obtained by taking the average value can more truly represent the sheet resistance and the contact resistivity between metal and semiconductor of the whole photovoltaic cell, so that the authenticity of data is improved, and the photovoltaic cell has more reference value for guiding actual production and selecting raw materials.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a photovoltaic cell used in a TLM test method;
fig. 2 is a schematic structural diagram of a photovoltaic cell provided in embodiment 1 of the present invention;
fig. 3 is a schematic structural diagram of a photovoltaic cell provided in embodiment 2 of the present invention;
fig. 4 is a schematic structural diagram of a photovoltaic cell provided in embodiment 3 of the present invention;
fig. 5 is a schematic structural diagram of a photovoltaic cell provided in embodiment 5 of the present invention.
Icon: 1-a photovoltaic cell piece; 2-test electrodes.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The invention provides a photovoltaic cell for measuring metal-semiconductor contact resistivity, wherein the surface of the photovoltaic cell comprises M test areas which are arranged from inside to outside, and each test area is internally provided with at least one group of test electrodes which are arranged in a parallel interval mode by N rectangular electrodes;
wherein M is more than or equal to 2; n is more than or equal to 3.
When a TLM method is adopted to prepare a test sample, only a group of test electrodes are printed at the central position of the silicon wafer, and the central contact doping source of the silicon wafer is less due to the position relation of the wafer boat in the diffusion process, and Fang Zugao is diffused; the edge of the silicon wafer is contacted with a plurality of doping sources, and the diffusion sheet resistance is low, so that the whole silicon wafer has the phenomenon of uneven diffusion, the sheet resistances at different positions are different, and the sheet resistances and the contact resistances at different positions of the battery piece are relatively large in difference, so that the sheet resistances and the contact resistances obtained by using the conventional TLM test sample cannot represent the actual values of the sheet resistances and the contact resistances of the whole battery piece. According to the photovoltaic cell, the M test areas are arranged from inside to outside, so that different test areas comprise areas with different diffusion concentrations, measurement can be performed in a plurality of areas with different diffusion concentrations, and finally, the sheet resistance and the contact resistivity obtained by taking the average value can more truly represent the sheet resistance and the contact resistivity between metal and semiconductor of the whole photovoltaic cell, so that the authenticity of data is improved, and the photovoltaic cell has more reference value for guiding actual production and selecting raw materials.
The test areas are arranged from inside to outside in the direction that the test areas extend from the central part of the photovoltaic cell to the edge, namely, the first test area is positioned at the middle part of the photovoltaic cell, and the second test area to the Mth test area are sequentially and gradually close to the edge of the photovoltaic cell, so that different test areas can cover different doped areas, and the test result can represent the actual level more.
In the present invention, the number M of test areas is preferably 4 to 10 in order to make the test result more accurate. Exemplary, but non-limiting, values of M are, for example: 2. 3, 4, 5, 6, 7, 8, 9 or 10.
The shape of the test area may not be limited, and may preferably be square to facilitate the arrangement of the test area. When the test areas are partitioned, the test areas may be partitioned in a side-by-side rectangular manner, may be partitioned in a cross grid manner, and may be partitioned in a ring-shaped manner. So long as the separated different test regions are capable of covering a plurality of regions of different doping concentrations.
As a preferred embodiment of the invention, the M test areas are sequentially and adjacently arranged from inside to outside, the first test area is a test area formed by a character shape, and the second test area to the Mth test area are annular test areas formed by a character shape. The concentration of the doping source is distributed stepwise from the center to the edge of the photovoltaic cell during diffusion, so that the arrangement of the test area can better cover the concentration distribution range of the test area.
As a preferred embodiment of the present invention, the M test areas have the same area. The areas of the test areas are equal, which can approximate that the sheet resistance of each test area is basically the same, and the equal area arrangement also facilitates the arrangement of the test areas.
As a preferred embodiment of the present invention, the edge profiles of the M test areas are square.
As a preferred embodiment of the present invention, the centers of the M test areas coincide with the center of the photovoltaic cell sheet.
As a preferred embodiment of the invention, the side length of the outer frame of the mth test area isWherein L is c Is the side length of the photovoltaic cell.
As a preferred embodiment of the invention, the test electrodes in the different test areas are arranged symmetrically with respect to at least one axis of symmetry of the photovoltaic cell. The symmetrical arrangement is convenient for printing and processing and manufacturing the screen.
As a preferred embodiment of the present invention, the rectangular electrode has a width of 0.1 to 2mm, preferably 0.5 to 2mm; optionally, the length of the rectangular electrode is less than the boundary of the test area. The rectangular electrode is more convenient to contact with the probe of the testing device by optimizing the width of the rectangular electrode.
In the preferred embodiment described above, the width of the rectangular electrode is typically, but not limited to, for example: 0.1mm, 0.2mm, 0.5mm, 0.7mm, 1mm, 0.13mm, 0.15mm, 0.18mm or 2mm.
As a preferred embodiment of the present invention, the interval between the rectangular electrodes is 0.2-100mm, preferably 2-50mm. Alternatively, the difference in the pitches of the rectangular electrodes is 0.2 to 20mm, preferably 2 to 20mm. Too small a spacing between the rectangular electrodes requires high precision requirements for the test equipment, while too large a spacing increases sample preparation costs, and therefore, by optimizing the spacing between the rectangular electrodes, processing costs can be reduced and the precision of the test equipment can be reduced. By optimizing the difference between the pitches between the rectangular electrodes, the difference in resistance between the rectangular electrodes can be increased, and calculation errors can be further eliminated.
In the preferred embodiment described above, the spacing of the rectangular electrodes is typically, but not limited to, for example: 0.2mm, 0.5mm, 1mm, 2mm, 4mm, 6mm, 8mm, 10mm, 15mm, 20mm, 25mm, 30mm, 40mm, 50mm, 60mm, 70mm, 80mm, 90mm or 100mm.
In the preferred embodiment described above, the differences in the pitches of the rectangular electrodes are typically, but not limited to, for example: 0.2mm, 0.5mm, 1mm, 2mm, 4mm, 6mm, 8mm, 10mm, 12mm, 14mm, 16mm, 18mm or 20mm.
As a preferred embodiment of the present invention, the number of the rectangular electrodes is 4 to 20. The more the number of rectangular electrodes, the more accurate the data of the fitting straight line is obtained. The pitches between the rectangular electrodes may be equal or different, or may be arranged in an arithmetic progression in the TLM method.
In the preferred embodiment described above, the number of rectangular electrodes may be, for example, which is typical but not limiting: 3. 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 or 20.
The second aspect of the invention provides a screen printing plate, wherein the printing pattern of the screen printing plate is matched with the pattern of the photovoltaic cell.
The third aspect of the invention provides a method for measuring sheet resistance and/or contact resistivity, which comprises the steps of respectively measuring the sheet resistance and/or contact resistivity in each corresponding test area by using the test electrode in the photovoltaic cell, and taking an average value after measurement to obtain the sheet resistance and/or contact resistivity of the photovoltaic cell;
or alternatively, the first and second heat exchangers may be,
the contact resistivity in each corresponding test area is measured by the test electrode, and then the formula M/ρ is used c =1/ρ c1 +1/ρ c2 +1/ρ c3 +1/ρ c4 +……1/ρ cM Calculating to obtain the contact resistivity rho of the whole battery piece c ，ρ c1 、ρ c2 、ρ c3 、ρ c4 、……ρ cM Respectively corresponding to the average contact resistivity of each test area.
As a preferred embodiment of the present invention, the area corresponding to each set of test electrodes is cut along the edges of the rectangular electrodes in the length direction by a laser dicing method before testing, and then the sheet resistance and/or contact resistivity is measured.
As a preferred embodiment of the present invention, the method for measuring sheet resistance and/or contact resistivity in each test area comprises the steps of:
step a): measuring the length W of the rectangular electrodes in the test electrode and the actual spacing L between adjacent rectangular electrodes, respectively, denoted as L 12 ，L 23 ，L 34 ，L 45 ，……，L (N-1)N ；
Step b): testing the resistance R between adjacent rectangular electrodes by four-terminal electrode method T Respectively designated as R T12 ，R T23 ，R T34 … … R T(N-1)N ；
Step c): the actual distance L of the rectangular electrodes is taken as the abscissa, and the resistor R is taken as T Making a scatter diagram for the ordinate, and linearly fitting to obtain R T A fitting straight line y=ax+b to L;
according to the formula:formula->The method can obtain:
contact resistance，
Battery sheet resistance: r is R sheet =A·W，
Current equivalent migration length under electrode,
From this, it can be obtained that the contact resistivity ρ of the battery cell at each test electrode cx =R c 2 *W 2 /R sheet The method comprises the steps of carrying out a first treatment on the surface of the Wherein X is the number of sets of test electrodes in each test area, x=1, 2, … …, X; then, the contact resistivity of each test areaWherein m=1, 2, … …, M;
then, the contact resistivity of the whole battery piece。
As a preferred embodiment of the present invention, the method for measuring the actual distance L between the adjacent rectangular electrodes includes: the actual printing width of the rectangular electrode is measured by a metallographic microscope, the epitaxial width of the rectangular electrode during printing is calculated, the actual printing width of the rectangular electrode is calculated, the design width of the rectangular electrode is calculated, and finally the actual spacing L between the rectangular electrodes is calculated, namely the design spacing and the epitaxial width.
As a preferred embodiment of the present invention, the resistance R between adjacent rectangular electrodes is tested T The test equipment used in the process comprises a constant direct current power supply and a voltmeter;
preferably, the resistance R between adjacent rectangular electrodes is tested T The method comprises the following steps: two probes of the output port of the constant direct current power supply are respectively contacted with the n-1 th rectangular electrode and the n-th rectangular electrode, and the output current is I n-1 The method comprises the steps of carrying out a first treatment on the surface of the Two probes of the input port of the voltmeter are respectively contacted with the n-1 th rectangular electrode and the n-th rectangular electrode, and the voltage V is measured n-1 Thereby obtaining the resistance R between the n-1 th rectangular electrode and the n-th rectangular electrode T（n-1）n = V n-1 / I n-1 。
It should be noted that the actual pitch and the designed pitch in the above preferred embodiment refer to the distance between the nearest edges of two adjacent rectangular electrodes.
In the current TLM method test process, the length of the rectangular electrode of the sample used for the test is much smaller than the length of the silicon wafer, so that partial current is not transmitted in the area between the two rectangular electrodes during the test, but is transmitted at the position of the silicon wafer outside the rectangular electrodes, and the calculated contact resistivity is much larger than the actual value. In the above preferred embodiment of the present invention, in the battery piece corresponding to the test electrode obtained after laser cutting, the length of the rectangular electrode extends to the edge of the battery piece, so that during measurement, current is strictly limited to be transmitted between the two rectangular electrodes, so that the actual transmission path of the current better conforms to the current transmission path involved in the theoretical derivation process, and the deviation between the measurement result and the actual value is reduced.
For an equal area of test area, the contact resistivity can also be calculated using the following method:
1) The average contact resistance of each test area was measured using the measurement method in the above preferred embodimentThe rates are respectively denoted as ρ c1 、ρ c2 、ρ c3 、ρ c4 、……ρ cM ；
2) Contact resistivity M/ρ of the whole cell c =1/ρ c1 +1/ρ c2 +1/ρ c3 +1/ρ c4 +……1/ρ cM 。
The present invention will be described in further detail with reference to examples.
Example 1
As shown in fig. 2, the present embodiment is a photovoltaic cell for measuring metal-semiconductor contact resistivity, and the surface of the photovoltaic cell 1 includes 3 rectangular test areas, denoted as A1, A2 and A3, respectively, from inside to outside, and a set of test electrodes 2 arranged in parallel and spaced manner by rectangular electrodes are disposed in each test area. Wherein the test areas are sequentially arranged in parallel.
Example 2
As shown in fig. 3, the present embodiment is a photovoltaic cell for measuring metal-semiconductor contact resistivity, and the surface of the photovoltaic cell 1 includes 5 square test areas, denoted as A1, A2, A3, A4 and A5, respectively, from inside to outside, and a set of test electrodes 2 arranged in parallel and spaced manner by rectangular electrodes are disposed in each test area. Wherein the test areas are arranged in a crisscrossed manner.
Example 3
As shown in fig. 4, the present embodiment is a photovoltaic cell for measuring metal-semiconductor contact resistivity, the surface of the photovoltaic cell 1 includes 2 square test areas, denoted as A1 and A2, disposed from inside to outside, wherein the 2 test areas are disposed adjacently in sequence from inside to outside, the first test area A1 is a test area formed by a die shape, the second test area A2 is an annular test area formed by a die shape, and the area of the first test area A1 is equal to the area of the second test area A2. The side length of the photovoltaic cell piece of the outer frame of the second test area A2. Referring to fig. 4, a set of test electrodes 2 is disposed in the first test area A1, and the symmetry axis of the test electrodes 2 coincides with one symmetry axis of the photovoltaic cell 1; second oneTwo groups of test electrodes 2 are arranged in the test area A2, and the two groups of test electrodes 2 are symmetrically arranged along the symmetry axis. The arrangement of the rectangular electrodes in the three groups of test electrodes is the same, the length W of the rectangular electrodes is 1cm, the width of the rectangular electrodes is 1mm, the number of the rectangular electrodes is 8, and the width L between the rectangular electrodes 12 ，L 23 ，L 34 ，L 45 ，L 56 ，L 67 And L 78 0.4mm,0.8mm,1.2mm,1.6mm,2.0mm,2.4mm and 2.8mm, respectively.
Example 4
The embodiment is a method for measuring sheet resistance and contact resistivity, and the photovoltaic cell provided in embodiment 3 is used for testing, and specifically includes the following steps:
step a): solar cell provided in preparation example 3: after the silicon wafer is subjected to texturing, diffusion, etching and film plating, the aluminum paste to be tested is selected for printing, the same printing pattern as that of the solar cell in the embodiment 3 is obtained on the surface of the silicon wafer, the printing direction is printed along the length direction of the rectangular electrode in the printing process, so that the epitaxy of the metal paste on the silicon wafer is reduced, and then the solar cell in the embodiment 3 is obtained through sintering;
step b) cutting the battery piece: cutting the solar cell obtained in the step a) along the edge of the short side of the rectangular electrode (namely, the direction perpendicular to the length direction of the rectangular electrode) by using laser to obtain 3 groups of test electrodes, respectively measuring the sheet resistance and the contact resistivity of a test area corresponding to each group of test electrodes by using a TLM test method, and finally calculating and averaging to obtain the sheet resistance and the contact resistivity of the whole photovoltaic cell;
the process of testing sheet resistance and contact resistivity of each group of test electrodes is as follows: the resistance R between adjacent rectangular electrodes was measured with a constant dc power supply and a voltmeter: binding two probes of a constant direct current power supply output port on two electrodes to be tested (an n-1 th rectangular electrode and an n-th rectangular electrode), wherein the output current is constant to be 1A, binding two test probes of a voltmeter on the two electrodes to be tested, and testing potential difference; since the output current is 1A, the voltmeter is read at this timeThe number is the resistance R between the n-1 rectangular electrode and the n rectangular electrode, and the unit is: omega, respectively denoted R 12 ，R 23 ，R 34 ，R 45 ，R 56 ，R 67 And R is 78 ；
Step c): taking the actual distance L of the rectangular electrodes as an abscissa, taking the resistor R as an ordinate to make a scatter diagram, and linearly fitting to obtain a fitting straight line Y=ax+B of R and L;
according to the formula:formula->The method can obtain:
contact resistance，
Battery sheet resistance: r is R sheet =A·W，
Current equivalent migration length under electrode,
From this, it can be obtained that the contact resistivity ρ of the battery cell at each test electrode cx =R c 2 *W 2 /R sheet Wherein X is the number of sets of test electrodes in each test area, x=1, 2, … …, X;
the contact resistivity of the A1 test area in this example was calculated as: ρ cA1 =7.4mΩ·cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The two contact resistivity values obtained by testing the A2 test area are respectively: ρ cA21 =2.1mΩ·cm 2 ，ρ cA22 =1.8mΩ·cm 2 Then the contact resistivity value ρ of the A2 test area cA2 =1/2（ρ cA21 +ρ cA22 ）=1.95mΩ·cm 2 ；
Finally, calculating to obtain the contact resistivity rho of the whole battery piece c =1/2（ρ cA1 +ρ cA2 ）=4.7 mΩ·cm 2 。
Example 5
As shown in fig. 5, this embodiment is a photovoltaic cell for measuring metal-semiconductor contact resistivity, and the surface of the photovoltaic cell 1 includes 4 square test areas from inside to outside, in each of which a set of test electrodes, denoted as A1, A2, A3, and A4, are disposed in parallel and spaced apart from each other by rectangular electrodes. The four test areas are sequentially and adjacently arranged from inside to outside, the first test area A1 is a test area formed by a character shape, the second test area to the fourth test area are annular test areas formed by a character shape, and the areas of the four test areas are equal. Side length of outer frame of first test area A1The side length of the outer border of the second test area A2 +.>The side length of the outer border of the second test area A3 +.>The side length of the photovoltaic cell piece of the outer frame of the fourth test area A4.
With continued reference to fig. 5, a set of test electrodes 2 is disposed within the first test area A1, the symmetry axis of the test electrodes 2 coinciding with one symmetry axis of the photovoltaic cell 1; two sets of test electrodes 2 are respectively disposed in the second test area A2 to the fourth test area A4, wherein the two sets of test electrodes 2 in each test area are symmetrically disposed along the symmetry axis. The arrangement of the rectangular electrodes in the seven groups of test electrodes 2 is the same, the length W of the rectangular electrodes is 1cm, the width of the rectangular electrodes is 1mm, the number of the rectangular electrodes is 8, and the width L between the rectangular electrodes 12 ，L 23 ，L 34 ，L 45 ，L 56 ，L 67 And L 78 0.4mm,0.8mm,1.2mm,1.6mm,2.0mm,2.4mm and 2.8mm, respectively.
Example 6
The embodiment is a method for measuring sheet resistance and contact resistivity, and the photovoltaic cell provided in embodiment 5 is used for testing, and specifically includes the following steps:
step a): solar cell provided in preparation example 5: after the silicon wafer is subjected to texturing, diffusion, etching and film plating, the aluminum paste to be tested is selected for printing, the same printing pattern as that of the solar cell in the embodiment 5 is obtained on the surface of the silicon wafer, the printing direction is printed along the length direction of the rectangular electrode in the printing process, so that the epitaxy of the metal paste on the silicon wafer is reduced, and then the solar cell in the embodiment 5 is obtained through sintering;
step b) cutting the battery piece: cutting the solar cell obtained in the step a) along the edge of the short side of the rectangular electrode (namely, the direction perpendicular to the length direction of the rectangular electrode) by using laser to obtain 7 groups of test electrodes, measuring the sheet resistance and the contact resistivity of a test area corresponding to each group of test electrodes by using a TLM test method respectively, and finally calculating and averaging to obtain the sheet resistance and the contact resistivity of the whole photovoltaic cell;
the process of testing sheet resistance and contact resistivity of each group of test electrodes is as follows: the resistance R between adjacent rectangular electrodes was measured with a constant dc power supply and a voltmeter: binding two probes of a constant direct current power supply output port on two electrodes to be tested (an n-1 th rectangular electrode and an n-th rectangular electrode), wherein the output current is constant to be 1A, binding two test probes of a voltmeter on the two electrodes to be tested, and testing potential difference; since the output current is 1A, the reading of the voltmeter is the resistance R between the n-1 th rectangular electrode and the n-th rectangular electrode, and the unit is: omega, respectively denoted R 12 ，R 23 ，R 34 ，R 45 ，R 56 ，R 67 And R is 78 ；
Step c): taking the actual distance L of the rectangular electrodes as an abscissa, taking the resistor R as an ordinate to make a scatter diagram, and linearly fitting to obtain a fitting straight line Y=ax+B of R and L;
according to the formula:formula->The method can obtain:
contact resistance，
Battery sheet resistance: r is R sheet =A·W，
Current equivalent migration length under electrode,
From this, it can be obtained that the contact resistivity ρ of the battery cell at each test electrode cx =R c 2 *W 2 /R sheet Wherein X is the number of sets of test electrodes in each test area, x=1, 2, … …, X;
the contact resistivity of the A1 test area in this example was calculated as: ρ cA1 =5.4mΩ·cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The two contact resistivity values obtained by testing the A2 test area are respectively: ρ cA21 =3.6mΩ·cm 2 ，ρ cA22 =4.0mΩ·cm 2 Then the contact resistivity value ρ of the A2 test area cA2 =1/2（ρ cA21 +ρ cA22 ）=3.8mΩ·cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The two contact resistivity values obtained by testing the A3 test area are respectively: ρ cA31 =2.1mΩ·cm 2 ，ρ cA32 =2.6mΩ·cm 2 Then the contact resistivity value ρ of the A3 test area cA3 =1/2（ρ cA31 +ρ cA32 ）=2.35mΩ·cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The two contact resistivity values obtained by testing the A4 test area are respectively: ρ cA41 =1.9mΩ·cm 2 ，ρ cA42 =2.1mΩ·cm 2 Then the contact resistivity value ρ of the A4 test area cA4 =1/2（ρ cA41 +ρ cA42 ）=2.0mΩ·cm 2 ；
Then, the contact resistivity of the whole battery piece is 4/ρ c =1/ρ cA1 +1/ρ cA2 +1/ρ cA3 +1/ρ cA4 Calculating to obtain rho c =2.9mΩ·cm 2 。
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (13)
1. The photovoltaic cell for measuring the metal-semiconductor contact resistivity is characterized in that the surface of the photovoltaic cell comprises M test areas which are arranged from inside to outside, and at least one group of test electrodes which are arranged in a parallel interval mode by N rectangular electrodes are arranged in each test area;
wherein M is more than or equal to 2; n is more than or equal to 3; the M test areas are sequentially and adjacently arranged from inside to outside, the first test area is a test area formed by a character shape, and the second test area to the M test area are annular test areas formed by a character shape.
2. The photovoltaic cell for measuring metal-semiconductor contact resistivity of claim 1 wherein the M test areas are equal in area.
3. The photovoltaic cell for measuring metal-semiconductor contact resistivity of claim 2 wherein the edge profile of the M test areas is square.
4. The photovoltaic cell for measuring metal-semiconductor contact resistivity of claim 3, wherein the outer border of the mth test zone has a side length ofWherein L is c Is the side length of the photovoltaic cell.
5. The photovoltaic cell for measuring metal-semiconductor contact resistivity of any of claims 1-4 wherein the test electrodes in different test areas are symmetrically disposed about at least one axis of symmetry of the photovoltaic cell.
6. The photovoltaic cell for measuring metal-semiconductor contact resistivity of any of claims 1-4 wherein said rectangular electrode has a width of 0.1-2mm.
7. The photovoltaic cell for measuring metal-semiconductor contact resistivity of claim 6 wherein the rectangular electrode has a length less than the boundary of the test region.
8. The photovoltaic cell for measuring metal-semiconductor contact resistivity of claim 6, wherein the rectangular electrodes have a pitch of 0.2-100mm.
9. The photovoltaic cell for measuring metal-semiconductor contact resistivity of claim 6 wherein the difference in spacing of the rectangular electrodes is 0.2-20mm.
10. The photovoltaic cell for measuring metal-semiconductor contact resistivity of claim 6 wherein the number of rectangular electrodes is 4-20.
11. Screen, characterized in that the printed pattern of the screen matches the pattern of the photovoltaic cell of any of claims 1-10.
12. The method for measuring the sheet resistance and/or the contact resistivity is characterized in that the sheet resistance and/or the contact resistivity in each corresponding test area are respectively measured by using the test electrode in any one of claims 1-10, and the sheet resistance and/or the contact resistivity of the photovoltaic cell is obtained by taking an average value after the measurement;
before testing, the corresponding area of each group of test electrodes is cut along the edge of the rectangular electrode in the length direction by a laser slicing method, and then the sheet resistance and/or the contact resistivity are measured.
13. A method for measuring sheet resistance and/or contact resistivity, which is characterized in that the test electrodes in any one of claims 1-10 are used for measuring the contact resistivity in each corresponding test area respectively, and then the average contact resistivity of the whole battery piece is calculated by using the formula M/ρc=1/ρc1+1/ρc2+1/ρc3+1/ρc4+ … … 1/ρcM, ρc1, ρc2, ρc3, ρc4, … … ρcM corresponding to each test area respectively;
before testing, the corresponding area of each group of test electrodes is cut along the edge of the rectangular electrode in the length direction by a laser slicing method, and then the sheet resistance and/or the contact resistivity are measured.
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| CN111487465B (en) * | 2020-03-25 | 2022-08-26 | 桂林电子科技大学 | Probe spacing calibration method and contact resistivity and interface resistivity testing method |
| CN113447716B (en) * | 2020-12-09 | 2022-04-29 | 重庆康佳光电技术研究院有限公司 | Display panel detection method and display panel |
| CN113270336B (en) * | 2021-05-21 | 2024-02-13 | 浙江爱旭太阳能科技有限公司 | Method and system for testing positive silver of SE-PERC battery |
| CN113654655A (en) * | 2021-08-24 | 2021-11-16 | 宁波工程学院 | Solar sun-tracking visible light photoresistor detection method |
| CN115422871B (en) * | 2022-10-21 | 2023-03-24 | 广东省大湾区集成电路与系统应用研究院 | Method, device and equipment for extracting contact resistivity and storage medium |
| CN116930799B (en) * | 2023-09-15 | 2023-12-08 | 江苏森标科技有限公司 | Online sheet resistance detection system of battery piece |
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