CN107863683B - 一种光学参量振荡器 - Google Patents
一种光学参量振荡器 Download PDFInfo
- Publication number
- CN107863683B CN107863683B CN201711384711.3A CN201711384711A CN107863683B CN 107863683 B CN107863683 B CN 107863683B CN 201711384711 A CN201711384711 A CN 201711384711A CN 107863683 B CN107863683 B CN 107863683B
- Authority
- CN
- China
- Prior art keywords
- frequency
- ultrashort pulse
- pulse laser
- fundamental frequency
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 170
- 230000008929 regeneration Effects 0.000 claims abstract description 65
- 238000011069 regeneration method Methods 0.000 claims abstract description 65
- 230000010355 oscillation Effects 0.000 claims abstract description 51
- 230000001172 regenerating effect Effects 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims description 108
- 238000002310 reflectometry Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 2
- 238000005086 pumping Methods 0.000 abstract description 12
- 230000001360 synchronised effect Effects 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 13
- 238000007747 plating Methods 0.000 description 12
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 230000003321 amplification Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/1083—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using parametric generation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
- H01S3/235—Regenerative amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08054—Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/082—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094096—Multi-wavelength pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/127—Plural Q-switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1312—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
- H01S3/1673—YVO4 [YVO]
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Abstract
本发明提供一种光学参量振荡器,包括基频超短脉冲激光器、基频再生放大器;通过在基频再生放大器再生腔内通过双色分光镜插入光学参量振荡腔,只要变频超短脉冲激光在光学参量振荡腔往返一周光程与基频超短脉冲在基频再生放大器往返一周光程相等或者变频超短脉冲激光在光学参量振荡腔往返一周光程是基频超短脉冲在基频再生放大器往返一周光程的整数分之一,就可以实现同步泵浦条件,而与基频光再生放大器的重复频率无关,实现高能量的超短脉冲光学参量振荡输出。
Description
技术领域
本发明涉及激光频率变换领域,更具体地,涉及一种光学参量振荡器。
背景技术
高能量超短脉冲激光,如皮秒或飞秒脉冲激光,在材料处理、激光光谱学、激光测距等领域具有重要应用。目前,获得高能量超短脉冲激光的方法是通过激光锁模的方法获得,并通过行波放大或再生放大的方法提高超短脉冲激光能量。然而,由于激光发射能级是分立的,只有少数波段的超短脉冲激光可以直接从激光发射器中获得。如可从Nd:YVO4激光器中获得1064nm和1342nm的超短脉冲激光,可从Ho:YAG激光器中获得2.1μm的超短脉冲激光。
为了在更宽的波长范围内,尤其是中红外范围获得超短脉冲激光,可以借助光学参量变频或者拉曼频移方法实现超短脉冲激光频率变换。光学参量变频包括光学参量产生(Optical Parametric Generation,OPG)、光学参量放大(Optical ParametricAmplification,OPA),以及光学参量振荡(Optical Parametric Oscillation,OPO)。
OPG方法阈值高、效率低、产生的变频激光光谱很宽,光束质量也很差;OPA方法是在OPG基础上注入一个小功率的信号激光,虽然可以改善OPG方法光谱宽、光束质量差的问题,然而额外需要的种子激光器增加了成本和复杂性,OPO方法阈值低、效率高、光谱窄、光束质量好、可调谐、结构紧凑,是理想的超短脉冲激光频率变换方法。然而,由于飞秒或皮秒超短脉冲激光持续时间很短,必须采用同步泵浦的方法才能实现光参量振荡。该方法通常要求OPO腔长须与泵浦激光脉冲间隔相等才能满足同步泵浦条件,因此该方法通常用于重复频率在100MHz左右的超短脉冲激光变频,其相应的腔长为1.5m。在平均功率一定的情况下,重频越高单脉冲能量越小,因此目前采用传统同步泵浦OPO方法获得超短脉冲激光能量仅为纳焦耳量级。为从光参量振荡器中获得更高的单脉冲能量,往往采用降低脉冲重复频率的方法,如2017年光学著名期刊Optics Express文献(Opt.Express 25,8840)中,采用重复频率为7.09MHz的1μm基频激光作为泵浦光实现了0.35μJ的2μm亚皮秒光参量振荡激光输出,为实现同步泵浦条件,他们的腔长总长为21.2m,采用大量镜子对光路进行进行折叠,结构非常复杂。如要采用1MHz重频的基频超短脉冲激光泵浦,相应的OPO腔长要达到150m,要用10kHz重频的基频光泵浦的话,所需的OPO腔长将达到15km,显然这是无法实现的。
发明内容
本发明提供一种克服上述问题或者至少部分地解决上述问题的一种光学参量振荡器,解决了现有技术中提高脉冲能量困难,无法实现高能量的超短脉冲光学参量振荡输出的问题。
根据本发明的一个方面,提供一种光学参量振荡器,包括基频超短脉冲激光器、基频再生放大器、光学参量振荡腔;
所述基频超短脉冲激光器用于产生基频超短脉冲激光;
所述基频再生放大器包括第一基频光反射镜、第二基频光反射镜、基频光偏振器、基频光Q开关;
所述第一基频光反射镜和所述第二基频光反射镜相对设置构成再生腔;所述基频光偏振器和基频光Q开关组合,用于接收所述基频超短脉冲激光并将所述基频超短脉冲激光锁定在再生腔内,以使所述基频超短脉冲激光沿再生腔的光轴线在所述再生腔内振荡;
所述再生腔的光轴线上设有变频介质以及至少一个分光镜,所述变频介质用于接收基频超短脉冲激光并产生变频超短脉冲激光,接收变频超短脉冲激光并放大;所述分光镜用于将所述变频超短脉冲激光分光并传输至所述光学参量振荡腔,以使所述变频超短脉冲激光在所述光学参量振荡腔内振荡。
作为优选的,所述分光镜包括第一分光镜和第二分光镜,所述第一分光镜分光并传输变频超短脉冲激光的光路上设有第一变频光反射镜,所述第二分光镜分光并传输变频超短脉冲激光的光路上设有第二变频光反射镜,所述第一变频光反射镜、第一分光镜、第二分光镜、第二变频光反射镜组成所述光学参量振荡腔。
作为优选的,所述第一基频光反射镜上还镀有变频光高反膜,所述分光镜分光并传输变频超短脉冲激光的光路上还设有一变频光反射镜,所述第一基频光反射镜、所述分光镜、所述变频光反射镜组成所述光学参量振荡腔。
作为优选的,所述第一基频光反射镜和所述第二基频光反射镜对基频超短脉冲激光反射率均大于90%;所述第一变频光反射镜、第二变频光反射镜对变频超短脉冲激光的反射率大于50%。
作为优选的,所述变频超短脉冲激光在所述光学参量振荡腔内往返一周的光程为所述基频超短脉冲激光在所述再生腔内往返一周的光程的1/n,其中n是正整数。
作为优选的,在所述第一基频光反射镜和所述第二基频光反射镜间设有激光增益介质,用于放大所述再生腔内的基频超短脉冲激光。
作为优选的,所述基频光Q开关连接有基频Q开关驱动;所述基频Q开关驱动用于为所述基频光Q开关提供重频为1Hz~1MHz的驱动电压。
作为优选的,所述光学参量振荡腔内还设有变频光Q开关和变频光偏振器,所述变频光Q开关用于将变频超短脉冲激光从变频光偏振器导出。
作为优选的,所述变频介质为KTiOPO4、RbTiOAsO4、KTiOAsO4、LiNbO3、LiInS2、LiGaSe2、BaGa4S7、BaGa4Se7、BBO、PPLN、SiC非线性光学晶体中的一种。
作为优选的,所述基频超短脉冲激光器为锁模激光器、被动调Q激光器或半导体激光器。
本发明提出一种光学参量振荡器,在基频超短脉冲的再生放大器腔内通过双色镜插入光学参量振荡器,只要光学参量振荡器往返一周光程与基频超短脉冲再生放大器往返一周光程相等或者光学参量振荡器往返一周光程是基频超短脉冲再生放大器往返一周光程的整数分之一,就可以实现同步泵浦条件,而与及基频光再生放大器的重复频率无关,实现高能量的超短脉冲光学参量振荡输出。
附图说明
图1为根据本发明实施例1的光学参量振荡器结构示意图;
图2为根据本发明实施例2的光学参量振荡器结构示意图;
图3为根据本发明实施例3的光学参量振荡器结构示意图。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
本实施例中示出了一种光学参量振荡器,包括基频超短脉冲激光器、基频再生放大器、光学参量振荡腔;
所述基频超短脉冲激光器用于产生基频超短脉冲激光;
所述基频再生放大器包括第一基频光反射镜、第二基频光反射镜、基频光偏振器、基频光Q开关;
所述第一基频光反射镜和所述第二基频光反射镜相对设置构成再生腔;所述基频光偏振器和基频光Q开关组合,用于接收所述基频超短脉冲激光并将所述基频超短脉冲激光锁定在再生腔内,以使所述基频超短脉冲激光沿再生腔的光轴线在所述再生腔内振荡;
所述再生腔的光轴线上设有变频介质以及至少一个分光镜,所述变频介质用于接收基频超短脉冲激光并产生变频超短脉冲激光,接收变频超短脉冲激光并放大;所述分光镜用于将所述变频超短脉冲激光分光并传输至所述光学参量振荡腔,以使所述变频超短脉冲激光在所述光学参量振荡腔内振荡。
所述变频超短脉冲激光在所述光学参量振荡器内往返一周的光程为所述基频超短脉冲激光在所述振荡腔内往返一周的光程的1/n。
实施例1
如图1所示,图中示出了一种高能量超短脉冲光学参量振荡器的结构示意图。包括基频超短脉冲激光器1、基频再生放大器、第一基频光反射镜2、第二基频光反射镜3、基频光偏振器4、基频光Q开关5、变频介质11、第一分光镜7、第二分光镜8、第一变频光反射镜9、第二变频光反射镜10、激光增益介质12。
所述基频超短脉冲激光器1是半导体可饱和吸收镜(SESAM)被动锁模Nd:YVO4皮秒激光器,脉冲重复频率80MHz,单脉冲能量10nJ,脉宽10ps、波长1064nm。
所述基频再生放大器由第一基频光反射镜2、第二基频光反射镜3、基频光偏振器4、基频光Q开关5、激光增益介质12构成,光学长度为1.5m,即再生腔的光学长度为1.5m;第一基频光反射镜2、第二基频光反射镜3基片材料为石英,通过镀介质膜实现对1064nm波长的激光反射率均大于99%;基频光Q开关5为BBO电光Q开光,由基频Q开关驱动6提供重频为10kHz的驱动电压,以实现基频超短脉冲激光注入基频再生放大器;基频光偏振器4是薄膜偏振片;激光增益介质12为Nd:YVO4,第一分光镜镜7、第二分光镜8基片为石英,通过镀介质膜实现对1064nm波长激光透过率大于98%,对1.5μm波长激光反射率大于99%,从而可以将1064nm基频激光和1.5μm变频激光分开。
所述变频介质11为KTA非线性晶体,切割角为θ=90°,切割;变频光高反射镜5对1.5μm波长激光反射率为80%;所述第一变频光反射镜9、第二变频光反射镜10、第一分光镜7、第二分光镜8构成光学参量振荡腔,光学参量振荡腔光学长度同样为1.5m,等于再生放大器腔光学长度;所述变频介质11为KTA非线性晶体,切割角为θ=90°,切割,设置于所述再生腔与所述光学参量振荡腔光轴重合部分。
所述基频超短脉冲激光器1产生的小能量基频超短脉冲激光通过基频光偏振器4和基频光Q开关5组合注入并锁定在再生腔内,从而在所述基频再生放大器中往返,每往返一次通过激光增益介质12两次,脉冲能量被放大,共可放大103~106倍。
基频再生放大器的再生腔内被放大的基频超短脉冲激光同样通过变频介质11,在满足相位匹配下,由光学参量效应产生1.5μm波长变频超短脉冲激光,并在光学参量振荡腔反馈振荡。由于光学参量振荡腔光学长度与基频再生放大器光学长度相等,因此1.5μm变频超短脉冲激光依次被第一变频光反射镜9、第二分光镜8、第一分光镜7、第二变频光反射镜10、第一分光镜7反射再次回到变频介质11时,1064nm的基频超短脉冲激光也再次到达变频介质11,因此1.5μm变频超短脉冲激光在1064nm基频超短脉冲激光泵浦下得到放大。重复以上过程直至1.5μm变频超短脉冲激光达到最大值,有效的1.5μm变频超短脉冲激光从第二变频光反射镜10中部分透过的激光获得,输出高能量的1.5μm脉冲激光,其脉冲包络具有与基频再生放大器相同的重频10kHz。
实施例2
如图2所示,图中示出了一种高能量超短脉冲光学参量振荡器的结构示意图。其在图1的基础上增加了变频光偏振器13、变频光Q开关14及驱动器15;第一基频光反射镜2与第一变频光反射镜9通过镀双高反膜合为同一片反射镜,即该反射镜既是第一基频光反射镜2又是第一变频光反射镜9。
变频光Q开关14为LISe电光Q开关。基频超短脉冲激光器1是半导体皮秒激光器,脉冲重复频率100MHz,单脉冲能量10pJ,脉宽30ps、波长1064nm。
所述基频再生放大器由第一基频光反射镜2、第二基频光反射镜3、基频光偏振器4、基频光Q开关5、激光增益介质12构成,光学长度为1.5m,即再生腔的光学长度为1.5m;第一基频光反射镜2基片材料为石英,通过镀介质膜实现对1064nm和3.5μm波长的激光反射率均大于99%,因此它同时是第一变频光反射镜9;第二基频光反射镜3基片材料为石英,通过镀介质膜实现对1064nm波长的激光反射率大于99%;基频光Q开关5为BBO电光Q开光,由基频Q开关驱动6提供重频为100kHz的驱动电压实现基频再生放大器基频超短脉冲激光的注入;基频光偏振器4是薄膜偏振片;激光增益介质12为Nd:YAG,第一分光镜7基片为石英,通过镀介质膜实现对1064nm波长激光透过率大于98%,对3.5μm中红外波长激光反射率大于99%,从而将1064nm基频超短脉冲激光和3.5μm中红外变频超短脉冲激光分开;所述变频介质11为KTA晶体,切割角为θ=41.4°,第二变频光高反射镜10对3.5μm波长激光反射率大于99%。
在本实施例中,第一变频光反射镜9、所述第一分光镜7、所述第二变频光反射镜10构成光学参量振荡腔,光学参量振荡腔光学长度为0.75m,等于再生放大器腔光学长度1/2。所述基频超短脉冲激光器1产生的小能量基频超短脉冲激光通过基频光偏振器4和基频光Q开关5组合注入并锁定在再生腔内,从而在所述基频再生放大器中往返,每往返一次通过激光增益介质12两次,脉冲能量被放大,共可放大103~106倍。
基频再生放大器的再生腔内被放大的基频超短脉冲激光同样通过变频介质11,在满足相位匹配下,由光学参量效应产生3.5μm波长变频超短脉冲激光,并在光学参量振荡腔反馈振荡。由于光学参量振荡腔光学长度是基频再生放大器再生腔光学长度一半,因此3.5μm变频超短脉冲激光依次被第一变频光反射镜9、第一分光镜7、第二变频光镜10、第一分光镜7反射两个循环回到变频介质11时,1064nm的基频超短脉冲激光也再次到达变频介质11,因此3.5μm变频超短脉冲激光在1064nm基频超短脉冲激光泵浦下得到放大。重复以上过程直至3.5μm变频超短脉冲激光达到最大值,此时变频光Q开关14工作,将3.5μm中红外变频超短脉冲激光从变频光偏振器13倒出获得高能量的3.5μm脉冲激光,其具有与基频再生放大器相同的重频100kHz。
实施例3
图3所示是一种高能量超短脉冲光学参量振荡器的结构示意图。与实施例2相比,将变频介质11替换为周期性极化铌酸锂PPLN晶体,基频光偏振器4和变频光偏振器13均选用偏振棱镜;通过镀膜将第一基频光反射镜2和第二分光镜8镀制到同一片镜片上,即该镜片既是第一基频光反射镜2,又是第二分光镜8.
基频超短脉冲激光器1选用1030nm SESAM被动锁模Yb:YAG光纤飞秒激光器,脉冲重复频率80MHz,单脉冲能量1nJ,脉宽500fs、波长1030nm。所述基频再生放大器中的激光增益介质12采用Yb:YAG盘片晶体。第一基频光反射镜2基片材料为氟化钙,通过镀介质膜实现对1030nm激光反射率均大于99%,对3.9μm波长激光透过率大于98%,因此第一基频光反射镜2同时是第二分光镜8;第二基频光反射镜3基片材料为石英,通过镀介质膜实现对1030nm波长的激光反射率大于99%;基频光Q开关5为RTP电光Q开光,由基频Q开关驱动6提供重频为1MHz的驱动电压实现超短脉冲激光注入基频再生放大器;基频光偏振器4是偏振棱镜;第一分光镜7基片材料为石英,通过镀介质膜实现对1030nm波长激光透过率大于98%,对3.9μm变频激光反射率大于99%,从而可以将1030nm基频激光和3.9μm变频激光分开;第二变频光反射镜10对3.9μm波长变频激光反射率大于99%;所述第一变频光反射镜9、所述第一分光镜7、所述第二变频光反射镜10构成光学参量振荡腔,其光学长度为同样为1.8m。所述基频超短脉冲激光器输出的低能量基频超短脉冲激光通过基频光偏振器4和基频光Q开关6的组合注入并锁定在再生腔内,从而在所述基频再生放大器中往返并被放大,每往返一次通过激光增益介质12两次,脉冲能量被放大,共可放大103~106倍。基频再生放大器腔内被放大的超短脉冲激光同样通过变频介质11,在PPLN晶体中产生3.9μm变频激光,并在光学参量振荡腔反馈振荡。由于光学参量振荡腔光学长度与基频再生放大器光学长度相同,因此3.9μm变频超短脉冲激光依次被第一变频光反射镜9、第一分光镜镜7、第二变频光反射镜10反射1个循环回到变频介质11时,1030nm的基频超短脉冲激光也再次到达变频介质1,因此3.9μm变频超短脉冲激光在1030nm的基频超短脉冲激光泵浦下得到放大。重复以上过程直至3.9μm变频超短脉冲激光达到最大值,此时变频光Q开关14工作,将3.9μm中红外变频超短脉冲激光从变频光偏振器13倒出获得高能量的3.9μm脉冲激光,其具有与基频再生放大器相同的重频1MHz。
本发明提出一种光学参量振荡器,在基频超短脉冲的再生放大器腔内通过双色镜插入光学参量振荡器,只要光学参量振荡器往返一周光程与基频超短脉冲再生放大器往返一周光程相等或者光学参量振荡器往返一周光程是基频超短脉冲再生放大器往返一周光程的整数分之一,就可以实现同步泵浦条件,而与及基频光再生放大器的重复频率无关,实现高能量的超短脉冲光学参量振荡输出。
实施例4
将图2中的激光增益介质12去掉构成本实施例的一种高能量超短脉冲光学参量振荡器的结构示意图。与实施例2相比,基频超短脉冲激光器1直接采用重频1kHz、脉冲能量10mJ、脉宽30ps、波长1064nm的较低重频高能量的皮秒激光器,因此基频再生放大器内无需设置激光增益介质。在以往的技术中,无法在如此低的重频下实现超短脉冲光学参量振荡,通过本实施例的方法则可实现。
所述基频再生放大器由第一基频光反射镜2、第二基频光反射镜3、基频光偏振器4、基频光Q开关5、激光增益介质12构成,光学长度为1.5m,即再生腔的光学长度为1.5m;第一基频光反射镜2基片材料为石英,通过镀介质膜实现对1064nm和,2.1μm波长的激光反射率均大于99%,因此它同时是第一变频光反射镜9;第二基频光反射镜3材料为石英,通过镀介质膜实现对1064nm波长的激光反射率大于99%;基频光Q开关5为KD*P电光Q开光,由基频Q开关驱动6提供重频为1kHz的驱动电压实现基频再生放大器中基频超短脉冲激光的注入;基频光偏振器4是薄膜偏振片;第一分光镜7基片为石英,通过镀介质膜实现对1064nm波长激光透过率大于98%,对2.1μm中红外波长激光反射率大于99%,从而将1064nm基频超短脉冲激光和2.1μm中红外变频超短脉冲激光分开;所述变频介质11为KTP晶体;第二变频光反射镜10对2.1μm波长激光反射率大于99%。
在本实施例中,第一变频光反射镜9、所述第一分光镜7、所述第二变频光反射镜10构成光学参量振荡腔,光学参量振荡腔光学长度为0.75m,等于再生放大器再生腔光学长度一半。所述基频超短脉冲激光器1产生的基频超短脉冲激光通过基频光偏振器4和基频光Q开关5组合注入并锁定在再生腔内,从而在所述基频再生放大器中往返。
基频再生放大器的再生腔内往返的基频超短脉冲激光同样通过变频介质11,在满足相位匹配下,由光学参量效应产生2.1μm波长变频超短脉冲激光,并在光学参量振荡腔反馈振荡。由于光学参量振荡腔光学长度是基频再生放大器振荡腔光学长度一半,因此2.1μm变频超短脉冲激光依次被第一变频光反射镜9、第一分光镜7、第二变频光镜10、第一分光镜7反射2个循环回到变频介质11时,1064nm的基频超短脉冲激光也再次到达变频介质11,因此2.1μm变频超短脉冲激光在1064nm基频超短脉冲激光往返泵浦下得到放大,且1064nm基频超短脉冲激光能量被消耗。重复以上过程直至2.1μm变频超短脉冲激光达到最大值,此时变频光Q开关14工作,将2.1μm中红外变频超短脉冲激光从变频光偏振器13倒出获得高能量的2.1μm脉冲激光,其具有与基频再生放大器相同的重频1kHz。
综上所述,本发明提出一种光学参量振荡器,在基频超短脉冲的再生放大器腔内通过双色镜插入光学参量振荡器,只要光学参量振荡器往返一周光程与基频超短脉冲再生放大器往返一周光程相等或者光学参量振荡器往返一周光程是基频超短脉冲再生放大器往返一周光程的整数分之一,就可以实现同步泵浦条件,而与及基频光再生放大器的重复频率无关,实现高能量的超短脉冲光学参量振荡输出。
最后,本发明的方法仅为较佳的实施方案,并非用于限定本发明的保护范围。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种光学参量振荡器,其特征在于,包括基频超短脉冲激光器、基频再生放大器、光学参量振荡腔;
所述基频超短脉冲激光器用于产生基频超短脉冲激光;
所述基频再生放大器包括第一基频光反射镜、第二基频光反射镜、基频光偏振器、基频光Q开关;
所述第一基频光反射镜和所述第二基频光反射镜相对设置构成再生腔;所述基频光偏振器和基频光Q开关组合,用于接收所述基频超短脉冲激光并将所述基频超短脉冲激光锁定在再生腔内,以使所述基频超短脉冲激光沿再生腔的光轴线在所述再生腔内振荡;
所述再生腔的光轴线上设有变频介质以及至少一个分光镜,所述变频介质用于接收基频超短脉冲激光并产生变频超短脉冲激光,接收变频超短脉冲激光并放大;所述分光镜用于将所述变频超短脉冲激光分光并传输至所述光学参量振荡腔,以使所述变频超短脉冲激光在所述光学参量振荡腔内振荡;
所述光学参量振荡器往返一周光程与所述基频超短脉再生放大器往返一周光程相等;
或者,所述光学参量振荡器往返一周光程是所述基频超短脉再生放大器往返一周光程的整数分之一。
2.根据权利要求1所述的光学参量振荡器,其特征在于,所述分光镜包括第一分光镜和第二分光镜,所述第一分光镜分光并传输变频超短脉冲激光的光路上设有第一变频光反射镜,所述第二分光镜分光并传输变频超短脉冲激光的光路上设有第二变频光反射镜,所述第一变频光反射镜、第一分光镜、第二分光镜、第二变频光反射镜组成所述光学参量振荡腔。
3.根据权利要求1或2所述的光学参量振荡器,其特征在于,所述第一基频光反射镜上还镀有变频光高反膜,所述分光镜分光并传输变频超短脉冲激光的光路上还设有一变频光反射镜,所述第一基频光反射镜、所述分光镜、所述变频光反射镜组成所述光学参量振荡腔。
4.根据权利要求2所述的光学参量振荡器,其特征在于,所述第一基频光反射镜和所述第二基频光反射镜对基频超短脉冲激光反射率均大于90%;所述第一变频光反射镜、第二变频光反射镜对变频超短脉冲激光的反射率大于50%。
5.根据权利要求1所述的光学参量振荡器,其特征在于,所述变频超短脉冲激光在所述光学参量振荡腔内往返一周的光程为所述基频超短脉冲激光在所述再生腔内往返一周的光程的1/n,其中n是正整数。
6.根据权利要求1所述的光学参量振荡器,其特征在于,在所述第一基频光反射镜和所述第二基频光反射镜间设有激光增益介质,用于放大所述再生腔内的基频超短脉冲激光。
7.根据权利要求1所述的光学参量振荡器,其特征在于,所述基频光Q开关连接有基频Q开关驱动;所述基频Q开关驱动用于为所述基频光Q开关提供重频为1Hz~1MHz的驱动电压。
8.根据权利要求1或2所述的光学参量振荡器,其特征在于,所述光学参量振荡腔内还设有变频光Q开关和变频光偏振器,所述变频光Q开关用于将变频超短脉冲激光从变频光偏振器导出。
9.根据权利要求1所述的光学参量振荡器,其特征在于,所述变频介质为KTiOPO4、RbTiOAsO4、KTiOAsO4、LiNbO3、LiInS2、LiGaSe2、BaGa4S7、BaGa4Se7、BBO、PPLN、SiC非线性光学晶体中的一种。
10.根据权利要求1所述的光学参量振荡器,其特征在于,所述基频超短脉冲激光器为锁模激光器、被动调Q激光器或半导体激光器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711384711.3A CN107863683B (zh) | 2017-12-20 | 2017-12-20 | 一种光学参量振荡器 |
PCT/CN2018/121698 WO2019120186A1 (zh) | 2017-12-20 | 2018-12-18 | 一种光学参量振荡器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711384711.3A CN107863683B (zh) | 2017-12-20 | 2017-12-20 | 一种光学参量振荡器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107863683A CN107863683A (zh) | 2018-03-30 |
CN107863683B true CN107863683B (zh) | 2020-06-02 |
Family
ID=61706642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711384711.3A Active CN107863683B (zh) | 2017-12-20 | 2017-12-20 | 一种光学参量振荡器 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN107863683B (zh) |
WO (1) | WO2019120186A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107863683B (zh) * | 2017-12-20 | 2020-06-02 | 中国科学院理化技术研究所 | 一种光学参量振荡器 |
CN111224308A (zh) * | 2018-11-23 | 2020-06-02 | 中国科学院理化技术研究所 | 一种中红外光参量全固态激光源 |
GB202018937D0 (en) * | 2020-12-01 | 2021-01-13 | Res & Innovation Uk | Compact high energy regenerative amplifier |
CN112864789B (zh) * | 2021-01-11 | 2022-05-03 | 中国科学院理化技术研究所 | 一种皮秒脉冲光学参量变频激光输出装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1461081A (zh) * | 2003-06-18 | 2003-12-10 | 清华大学 | 折叠型内腔变反射率光参量振荡器 |
CN1630967A (zh) * | 2001-09-20 | 2005-06-22 | 费多尔·V·卡尔普什科 | 激光辐射的腔内频率变换 |
CN101676785A (zh) * | 2008-09-18 | 2010-03-24 | 中国科学院福建物质结构研究所 | 一种产生2微米波段激光的光参量振荡器 |
CN105305221A (zh) * | 2015-11-25 | 2016-02-03 | 吕志伟 | 一种百皮秒至纳秒脉冲宽度可调的固体激光器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7599413B2 (en) * | 2006-05-19 | 2009-10-06 | Pavilion Integration Corp. | Self-contained module for injecting signal into slave laser without any modifications or adaptations to it |
CN101673917A (zh) * | 2009-09-29 | 2010-03-17 | 天津大学 | 端面泵浦中红外kta参量振荡器 |
CN103199427B (zh) * | 2013-03-14 | 2015-03-04 | 天津大学 | 一种内腔单谐振光学参量振荡器 |
CN106856292B (zh) * | 2017-02-21 | 2019-03-08 | 中国科学院上海光学精密机械研究所 | 基于外差拍频锁定的种子注入2μm波段单频脉冲光参量振荡器 |
CN106711745B (zh) * | 2017-02-26 | 2019-03-08 | 中国科学院上海光学精密机械研究所 | 宽调谐、窄线宽纳秒脉冲双共振中红外参量振荡器 |
CN107863683B (zh) * | 2017-12-20 | 2020-06-02 | 中国科学院理化技术研究所 | 一种光学参量振荡器 |
-
2017
- 2017-12-20 CN CN201711384711.3A patent/CN107863683B/zh active Active
-
2018
- 2018-12-18 WO PCT/CN2018/121698 patent/WO2019120186A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1630967A (zh) * | 2001-09-20 | 2005-06-22 | 费多尔·V·卡尔普什科 | 激光辐射的腔内频率变换 |
CN1461081A (zh) * | 2003-06-18 | 2003-12-10 | 清华大学 | 折叠型内腔变反射率光参量振荡器 |
CN101676785A (zh) * | 2008-09-18 | 2010-03-24 | 中国科学院福建物质结构研究所 | 一种产生2微米波段激光的光参量振荡器 |
CN105305221A (zh) * | 2015-11-25 | 2016-02-03 | 吕志伟 | 一种百皮秒至纳秒脉冲宽度可调的固体激光器 |
Non-Patent Citations (1)
Title |
---|
30.5-μJ, 10-kHz, picosecond optical parametric oscillator pumped synchronously and intracavity by a regenerative amplifier;LI-JIAO HE等;《Optics Letters》;20180201;第43卷(第3期);第539-542页,附图1 * |
Also Published As
Publication number | Publication date |
---|---|
CN107863683A (zh) | 2018-03-30 |
WO2019120186A1 (zh) | 2019-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107863683B (zh) | 一种光学参量振荡器 | |
Burr et al. | High-repetition-rate femtosecond optical parametric oscillator based on periodically poled lithium niobate | |
Reid et al. | Advances in ultrafast optical parametric oscillators | |
Ebrahim-Zadeh et al. | Breakthroughs in photonics 2012: Breakthroughs in optical parametric oscillators | |
McDonagh et al. | 47 W, 6 ns constant pulse duration, high-repetition-rate cavity-dumped Q-switched TEM 00 Nd: YVO 4 oscillator | |
JP2004505472A (ja) | 非線形光学系において使用するためのレーザー | |
CN110854672A (zh) | 一种电光调q腔内倍频亚纳秒脉冲绿光激光器 | |
US7907644B2 (en) | High-repetition laser system for generating ultra-short pulses according to the principle of cavity dumping | |
CN107706733B (zh) | 一种产生亚纳秒脉冲激光的方法 | |
JP2007512693A (ja) | コンパクトな設計の高度繰り返しレーザーシステム | |
CN210779491U (zh) | 一种电光调q腔内倍频亚纳秒脉冲绿光激光器 | |
CN110492345B (zh) | 一种波长可调谐非线性镜锁模激光器及工作方法 | |
EP4256659B1 (en) | Wavelength-tunable source of pulsed laser radiation for vis-nir spectroscopy | |
WO2020160422A1 (en) | Low repetition rate infrared tunable femtosecond laser source | |
Emmerichs et al. | Generation of high-repetition rate femtosecond pulses tunable in the mid-infrared | |
WO2014120371A2 (en) | Diamond-based supercontinuum generation system | |
Zou et al. | An in-band diode-end-pumped high-power and high-efficiency ultrashort pulse Nd: YVO4 bulk laser mode-locked by a frequency doubling LBO crystal | |
JP2010258198A (ja) | モード同期固体レーザ装置 | |
Devi et al. | Phase-modulation-mode-locked continuous-wave MgO: PPLN optical parametric oscillator | |
Simon et al. | Nonlinear optical frequency conversion techniques | |
McDonagh et al. | 888-nm pumping of Nd: YVO4 for high-power high-efficiency TEM00 lasers | |
Yao et al. | An actively mode-locked Ho: YAG solid-laser pumped by a Tm-doped fiber laser | |
Marandi et al. | Guided-wave half-harmonic generation of frequency combs with∼ 75-fold spectral broadening | |
Gribanov et al. | Regimes of Pulsed Generation in a-Laser with Different Optical Circuits of Resonators | |
Tang et al. | Optical parametric processes and broadly tunable femtosecond sources |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |