CN107861338A - A kind of method that three-dimension curved surface exposure and etching are realized using grayscale mask version - Google Patents
A kind of method that three-dimension curved surface exposure and etching are realized using grayscale mask version Download PDFInfo
- Publication number
- CN107861338A CN107861338A CN201711215278.0A CN201711215278A CN107861338A CN 107861338 A CN107861338 A CN 107861338A CN 201711215278 A CN201711215278 A CN 201711215278A CN 107861338 A CN107861338 A CN 107861338A
- Authority
- CN
- China
- Prior art keywords
- etching
- photoresist
- processed
- curved surface
- dimension curved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
Abstract
The invention belongs to micro-nano three-dimension curved surface manufacture field, and disclose a kind of method that three-dimension curved surface exposure and etching are realized using grayscale mask version.This method comprises the following steps：(a) working depth of material surface to be processed, and the position correspondence relation of mask plate and material to be processed are determined, corresponding position sets corresponding gray value on mask plate；(b) photoresist is coated with material surface to be processed, photoresist is exposed and developed through mask plate using light source, thus form three-dimension curved surface figure on photoresist surface；(c) material to be processed for having photoresist to the surface obtained by step (b) carries out compound etching, so as to form required three-dimension curved surface figure in material surface to be processed, thus completes to treat the processing of rapidoprint.By the present invention, processing dimension is small, and machining accuracy is high, high in machining efficiency.
Description
Technical field
The invention belongs to micro-nano three-dimension curved surface manufacture field, and three are realized using grayscale mask version more particularly, to one kind
The method for tieing up Bent exposure and etching.
Background technology
Traditional optical must not be imaged independent of morphology and optical material, cause optical imaging system complexity, mirror
Piece quantity is more, assembling and testing and measuring technology are complicated, and volume is big, quality weight, can not realize the unification of high-performance and lighting.With biography
System optical element is compared, and when micronano optical element surface structure reaches nanoscale (nm) characteristic size, it can have tradition grand
See optical texture and micron order (μm)/grade (mm) Jie sees some functions or characteristic that micro-structural does not have, it is this
Optical function micro-structural can increase the Optical System Design free degree so that optical system number of lenses is reduced, lens dimension reduces,
System architecture simplifies, while further improves image quality, expands visual field, detection range and measurement accuracy.
The processing method of micronano optical micro-structural is more at present, mainly has：Precision grinding machining, diamond precision car
Cut, femtosecond/Ah second's Laser Processing, nano impression, electrical-chemistry method, Laser deposition etching etc..Prior art is using exposure
The product finally obtained with the method for etching is mostly plane, stepped structure or could obtained by multiple etching required
Three-dimensional structure, and the problems such as processing dimension is larger, machining accuracy is low, processing efficiency is poor be present.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, three are realized using grayscale mask version the invention provides one kind
The method for tieing up Bent exposure and etching, by using grayscale mask version exposure photo-etching glue, three-dimension curved surface is formed on photoresist surface
Figure, and then to be processed Material cladding of the surface with photoresist is etched, thus solving can not one in material surface to be processed
The technical problem of secondary shaped three dimensional curved surface figure.
To achieve the above object, it is proposed, according to the invention, provide it is a kind of using grayscale mask version realize three-dimension curved surface exposure with
The method of etching, it is characterised in that this method comprises the following steps：
(a) required three-dimension curved surface figure is directed to, determines its working depth at material surface diverse location to be processed,
Mask plate is placed in the top of material to be processed, the position correspondence relation of the mask plate and material to be processed is determined, for institute
The working depth at diverse location is stated, corresponding position sets corresponding gray value on the mask plate；
(b) photoresist is coated with material surface to be processed, the photoresist is carried out through the mask plate using light source
Exposed and developed, in the exposure process, the difference of gray value causes the photoresist surface at diverse location on the mask plate
Deep mixed exposure is realized, thus forms three-dimension curved surface figure in the photoresist surface development；
(c) material to be processed for having photoresist to the surface after being developed by step (b) carries out compound etching, so as to be added
Work material surface forms required three-dimension curved surface figure, thus completes to treat the processing of rapidoprint, wherein, the compound etching
Comprise the following steps：
(c1) etching the composition A and B performed etching to the photoresist and material to be processed is chosen respectively, and this is etched
Composition A and B mixing obtain mixture etching composition C；
(c2) the three-dimension curved surface figure formed using the etching composition C according to the photoresist surface, to the photoetching
Glue and material to be processed perform etching simultaneously.
It is further preferred that in step (c1), when etching the composition A and B do not chemically react, pass through regulation
A and B ratio in the etching composition C so that the etching composition C is respectively to the etching of the photoresist and material to be processed
Speed is identical.
It is further preferred that in step (c1), when etching the composition A and B do not chemically react, and pass through tune
Saving the ratio of A and B in the etching composition C can not cause the etching composition C respectively to the photoresist and material to be processed
Etch rate it is identical when,
(I) obtained according to etching composition C respectively to the ratio between the photoresist and the etching speed for treating rapidoprint r
The etching composition C is respectively to photoresist and the prediction working depth S of material to be processed in same time1And S2The ratio between be also r,
It is derived from the prediction working depth S of the photoresist1=r*S2；
(II) the depth d for the three-dimension curved surface figure formed in the photoresist surface development that measurement is obtained by step (b),
Calculate depth d and the photoresist prediction working depth S1Sum S,
If S=S2, start to etch using the etching composition C；
If S ≠ S2, adjust the gray value, repeat step (b), until S=S2, start to carve using the etching composition C
Erosion.
It is further preferred that the mask plate preferably uses glass chromium plate or film.
It is further preferred that the compound lithographic method used that etches is wet etching or dry etching.
In general, by the contemplated above technical scheme of the present invention compared with prior art, enough obtain following beneficial
Effect：
1st, the present invention is by using mask plate, and sets the gray value at mask plate diverse location, and light source passes through mask plate
During exposure photo-etching glue, gray scale figure can carry out the intensity modulated of light to the directional light that exposure light source comes out in grayscale mask version, make
Photoresist by the light irradiation of different light intensity, realize the deep mixed exposure of photoresist, it is three-dimensional so as to be obtained on photoresist surface
Curved surface figure；
2nd, the present invention is by using compound etching, by from etching composition to photoresist and material to be processed in the same time
Erosion, machining accuracy are high and high in machining efficiency；
3rd, exposure provided by the invention and lithographic method, step is simple, simple operation, the three-dimension curved surface structure precision of processing
Height, shape of product variation, applied widely, the micronano optical element that is particularly suitable for use in, LED graph substrates, solar energy, harmonic oscillator
The processing of gyroscope, MEMS etc..
Brief description of the drawings
Fig. 1 is according to the exposure constructed by the preferred embodiments of the present invention and the method flow diagram of etching；
Fig. 2 is according to the gray-scale map schematic diagram in the grayscale mask version constructed by the preferred embodiments of the present invention；
Fig. 3 is to be coated with according to the rapidoprint constructed by the preferred embodiments of the present invention after photoresist and exposure in photoresist
Surface forms the schematic diagram of three-dimension curved surface figure；
Fig. 4 is according to the three-dimension curved surface figure formed in material surface to be processed constructed by the preferred embodiments of the present invention
Schematic diagram.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Conflict can is not formed each other to be mutually combined.
Realize that three-dimension curved surface exposure and lithographic method comprise the following steps using grayscale mask version：
(a) graphical to mask plate progress gray scale, the gray value put on the figure corresponds directly to the height of curved surface；
(b) photoresist is coated with machined material surface, when being exposed using the grayscale mask version, gray scale in grayscale mask version
Figure can carry out the intensity modulated of light to the directional light that exposure light source comes out so that photoresist is by the light irradiation of different light intensity, reality
The deep mixed exposure of existing photoresist, the three-dimension curved surface figure of photoresist can be obtained after developed；
(c) the machined material surface of the three-dimension curved surface figure to having obtained photoresist carries out compound etching, finally obtains
The three-dimension curved surface figure on machined material surface.By machined material etching composition and photoresist etching composition at both not
Mix, the compound rear etching composition is performed etching to machined material and photoresist simultaneously, such as under generation chemical reaction condition
Fruit machined material is different from photoresist etch rate, can etch composition ratio with photoresist by testing to adjust machined material
Example, makes both etch rates equal.So as to obtain target three-dimension curved surface figure.
If the etch rate for adjusting machined material can not be identical with the etch rate of photoresist, it can be obtained by experiment
Photoresist and machined material by different rates during same etching ingredient source etching, obtaining speed ratio factor, (speed ratio factor is
Different rates ratio when photoresist is etched with backing material by same etching source), according to the elevation information of three-dimension curved surface, utilize this
Speed ratio factor, the gray scale figure on mask plate is adjusted, so as to adjust the thickness information of photoresist so that while to machined material
Target three-dimension curved surface figure is obtained after being performed etching with photoresist.This method have processing dimension is small, machining accuracy is high, processing effect
The advantages that rate is high.
This method is not limited in mask plate exposure, can also use the energy without mask plate such as electron beam, laser, ion beam
Exposure.The energy exposure without mask plate such as electron beam, laser, ion beam is that above-mentioned figure gray value is converted into electron beam, swashed
Residence time when light, ion beam direct-write photoetching glue, residence time length can cause the depth of direct-write photoetching glue deep, so as to set up
Figure gray value and the one-to-one relation of photoresist depth, the three-dimension curved surface figure of photoresist can be obtained.
The etching can be wet etching or dry etching etc..The machined material that this method is directed to is not limited in silicon material
Material, glass etc., apply also for other semi-conducting materials such as GaN.
The present invention is further detailed below in conjunction with specific embodiments.
Example one
The patterned mask plate of hemisphere upper surface gray scale is made, the gray value put on the figure corresponds directly to hemisphere upper table
The height in face；
Photoresist is coated with machined material Si surfaces, when being exposed using the grayscale mask version, gray scale in grayscale mask version
Figure can carry out the intensity modulated of light to the directional light that exposure light source comes out so that photoresist is by the light irradiation of different light intensity, reality
The deep mixed exposure of existing photoresist, the hemisphere upper surface figure of photoresist can be obtained after developed；
The machined material Si surfaces of hemisphere upper surface figure to having obtained photoresist carry out compound etching, finally obtain
The hemisphere upper surface figure on machined material Si surfaces.By machined material Si etching composition SF6With being etched into for photoresist
Divide oxonium ion mixing, the compound rear etching composition performed etching to machined material Si with photoresist simultaneously,
If machined material is different from photoresist etch rate, machined material Si and photoetching can be adjusted by testing
Glue etches component ratio, makes both etch rates equal.So as to obtain target hemisphere upper surface figure.Period can use Bosch
Technique is etched with protection alternately.
Example two：
The patterned mask plate of hemisphere upper surface gray scale is made, the gray value put on the figure corresponds directly to hemisphere upper table
The height in face；
Photoresist is coated with machined material glass surface, it is grey in grayscale mask version when being exposed using the grayscale mask version
The intensity modulated of light can be carried out to the directional light that exposure light source comes out by spending figure so that photoresist by the light irradiation of different light intensity,
The deep mixed exposure of photoresist is realized, the hemisphere upper surface figure of photoresist can be obtained after developed；To having obtained photoetching
The machined material glass surface of the hemisphere upper surface figure of glue carries out compound etching, finally obtains machined material glass surface
Hemisphere upper surface figure.Photoresist is obtained with machined material glass by same etching ingredient source CHF by testing3+O2Etching
When different rates, obtaining speed ratio factor, (speed ratio factor is difference when photoresist and backing material are etched by same etching source
Speed ratio), according to the elevation information of three-dimension curved surface, using the speed ratio factor, the gray scale figure on mask plate is adjusted, so as to adjust
The thickness information of photoresist so that while obtain target hemisphere upper surface after being performed etching to machined material glass and photoresist
Figure.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all any modification, equivalent and improvement made within the spirit and principles of the invention etc., all should be included
Within protection scope of the present invention.
Claims (5)
- A kind of 1. method that three-dimension curved surface exposure and etching are realized using grayscale mask version, it is characterised in that under this method includes Row step：(a) required three-dimension curved surface figure is directed to, its working depth at material surface diverse location to be processed is determined, will cover Film version is placed in the top of material to be processed, determines the position correspondence relation of the mask plate and material to be processed, for it is described not With the working depth of opening position, corresponding position sets corresponding gray value on the mask plate；(b) photoresist is coated with material surface to be processed, the photoresist is exposed through the mask plate using light source And development, in the exposure process, the difference of gray value causes the photoresist surface to realize at diverse location on the mask plate Deep mixed exposure, thus form three-dimension curved surface figure in the photoresist surface development；(c) material to be processed for having photoresist to the surface after being developed by step (b) carries out compound etching, so as in material to be processed Material surface forms required three-dimension curved surface figure, thus completes to treat the processing of rapidoprint, wherein, the compound etching includes The following steps：(c1) etching the composition A and B performed etching to the photoresist and material to be processed is chosen respectively, and by the etching composition A and B mixing obtains mixture etching composition C；(c2) the three-dimension curved surface figure formed according to the photoresist surface using the etching composition C, to the photoresist with Material to be processed performs etching simultaneously.
- A kind of 2. method that three-dimension curved surface exposure and etching are realized using grayscale mask version as claimed in claim 1, in step (c1) in, when etching the composition A and B do not chemically react, by adjusting the ratio of A and B in the etching composition C, So that the etching composition C is identical with the etch rate of material to be processed to the photoresist respectively.
- A kind of 3. method that three-dimension curved surface exposure and etching are realized using grayscale mask version as claimed in claim 1, in step (c1) in, when etching the composition A and B do not chemically react, and by adjusting the ratio of A and B in the etching composition C When can not make it that the etching composition C is identical with the etch rate of material to be processed to the photoresist respectively,(I) obtained according to etching composition C respectively to the ratio between the photoresist and the etching speed for treating rapidoprint r identical The etching composition C is respectively to photoresist and the prediction working depth S of material to be processed in time1And S2The ratio between be also r, thus Obtain the prediction working depth S of the photoresist1=r*S2；(II) the depth d for the three-dimension curved surface figure formed in the photoresist surface development that measurement is obtained by step (b), calculate Depth d and the photoresist prediction working depth S1Sum S,If S=S2, start to etch using the etching composition C；If S ≠ S2, adjust the gray value, repeat step (b), until S=S2, start to etch using the etching composition C.
- 4. a kind of method that three-dimension curved surface exposure and etching are realized using grayscale mask version as claimed in claim 1, its feature It is, the mask plate preferably uses glass chromium plate or film.
- 5. a kind of method that three-dimension curved surface exposure and etching are realized using grayscale mask version as claimed in claim 1, its feature It is, the compound lithographic method used that etches is wet etching or dry etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711215278.0A CN107861338A (en) | 2017-11-28 | 2017-11-28 | A kind of method that three-dimension curved surface exposure and etching are realized using grayscale mask version |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711215278.0A CN107861338A (en) | 2017-11-28 | 2017-11-28 | A kind of method that three-dimension curved surface exposure and etching are realized using grayscale mask version |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107861338A true CN107861338A (en) | 2018-03-30 |
Family
ID=61702761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711215278.0A Pending CN107861338A (en) | 2017-11-28 | 2017-11-28 | A kind of method that three-dimension curved surface exposure and etching are realized using grayscale mask version |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107861338A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110164944A (en) * | 2019-06-03 | 2019-08-23 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, mask plate, display device |
| CN111474822A (en) * | 2020-05-19 | 2020-07-31 | 中国科学院光电技术研究所 | Method for quickly correcting uniformity of optical substrate based on three-dimensional photoresist mask |
| CN114253079A (en) * | 2020-09-21 | 2022-03-29 | 浙江水晶光电科技股份有限公司 | Light intensity correction method, device and equipment for gray scale photoetching and storage medium |
| CN114721078A (en) * | 2022-04-08 | 2022-07-08 | 中国科学院光电技术研究所 | Refraction-harmonic diffraction mixed lens array device for multispectral imaging and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438544A (en) * | 2003-02-28 | 2003-08-27 | 北京大学 | Method for deep etching multi-layer high depth-width-ratio silicon stairs |
| CN1556442A (en) * | 2004-01-06 | 2004-12-22 | 中国人民解放军国防科学技术大学 | Binary optica device grey scale changing mask method and device for making |
| US20060139597A1 (en) * | 2004-12-29 | 2006-06-29 | Asml Netherlands Bv | Methods and systems for lithographic gray scaling |
-
2017
- 2017-11-28 CN CN201711215278.0A patent/CN107861338A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438544A (en) * | 2003-02-28 | 2003-08-27 | 北京大学 | Method for deep etching multi-layer high depth-width-ratio silicon stairs |
| CN1556442A (en) * | 2004-01-06 | 2004-12-22 | 中国人民解放军国防科学技术大学 | Binary optica device grey scale changing mask method and device for making |
| US20060139597A1 (en) * | 2004-12-29 | 2006-06-29 | Asml Netherlands Bv | Methods and systems for lithographic gray scaling |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110164944A (en) * | 2019-06-03 | 2019-08-23 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, mask plate, display device |
| CN111474822A (en) * | 2020-05-19 | 2020-07-31 | 中国科学院光电技术研究所 | Method for quickly correcting uniformity of optical substrate based on three-dimensional photoresist mask |
| CN114253079A (en) * | 2020-09-21 | 2022-03-29 | 浙江水晶光电科技股份有限公司 | Light intensity correction method, device and equipment for gray scale photoetching and storage medium |
| CN114253079B (en) * | 2020-09-21 | 2024-04-09 | 浙江水晶光电科技股份有限公司 | Gray scale photoetching light intensity correction method, device, equipment and storage medium |
| CN114721078A (en) * | 2022-04-08 | 2022-07-08 | 中国科学院光电技术研究所 | Refraction-harmonic diffraction mixed lens array device for multispectral imaging and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107861338A (en) | A kind of method that three-dimension curved surface exposure and etching are realized using grayscale mask version | |
| CN101384967B (en) | Optical integrator for an illumination system of a microlithographic projection exposure apparatus | |
| TW583720B (en) | Optical illuminating system, light exposure equipment and manufacturing method of micro-devices | |
| Niesler et al. | Two‐Photon Polymerization—A Versatile Microfabrication Tool: From maskless lithography to 3D printing | |
| CN105259739B (en) | The photolithography method and device of periodic array in two dimensions are prepared from imaging based on ultraviolet wide spectrum | |
| US11789182B2 (en) | Micro concave-convex structure for optical body and display device | |
| Luo et al. | Fabrication of a curved microlens array using double gray-scale digital maskless lithography | |
| CN107904577A (en) | A kind of controllable surface preparation method of wellability based on dynamic control | |
| CN106536163A (en) | Master manufacturing method, transferred object, and replica master | |
| CN105645347B (en) | The localization method of bulk-micromachining | |
| TWI272456B (en) | Method for making mold of light guide plate | |
| CN108242398A (en) | Method for Forming Complex Curved Surface on Wafer Surface | |
| CN203838359U (en) | Base material structure for manufacturing concave blazed grating, and blazed grating convenient to manufacture | |
| CN104503024A (en) | Preparation method of polymer optical waveguide with inclined-surface coupling port | |
| CN105549138A (en) | Seven-grade diffraction grating structure, preparation method thereof and wafer photoetching alignment method | |
| CN105242495B (en) | Photoetching exposure device | |
| CN106019807A (en) | Method of manufacturing photomask, photomask and method of manufacturing flat panel display | |
| US2389504A (en) | Process of making reticles or the like | |
| CN102495526A (en) | Optical exposing method, and method for applying optical exposure in preparation of silicon material vertical hollow structure | |
| CN108107683B (en) | Silicon wafer surface photoetching method with high-step structure | |
| CN202230299U (en) | Super resolution direct writing lithography machine based on guided mode interference | |
| CN102540746A (en) | Method for achieving three-dimensional photoetching of projection type photoetching machine by utilizing layering exposure | |
| Tormen et al. | Three-dimensional micro-and nanostructuring by combination of nanoimprint and x-ray lithography | |
| Niesler et al. | Two‐Photon Polymerization—A Versatile Microfabrication Tool: From maskless lithography to 3D printing | |
| US20030049545A1 (en) | Methods for manufacturing reticles and reticle blanks exhibiting reduced warp and resist stress for use in charged-particle-beam microlithography |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180330 |
|
| WD01 | Invention patent application deemed withdrawn after publication |