CN111474822A - Method for quickly correcting uniformity of optical substrate based on three-dimensional photoresist mask - Google Patents
Method for quickly correcting uniformity of optical substrate based on three-dimensional photoresist mask Download PDFInfo
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- CN111474822A CN111474822A CN202010422741.4A CN202010422741A CN111474822A CN 111474822 A CN111474822 A CN 111474822A CN 202010422741 A CN202010422741 A CN 202010422741A CN 111474822 A CN111474822 A CN 111474822A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
Abstract
The invention provides a method for quickly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask. The method comprises the following steps: and (4) manufacturing a three-dimensional photoresist mask and uniformly etching and thinning. The working process comprises the steps of firstly carrying out initial uniformity test on the optical substrate, then completing the distribution test of the thickness of the photoresist coating on the surface of the optical substrate, and then carrying out photoetching removal amount distribution design, gray ultraviolet exposure, development and post-baking to form the three-dimensional photoresist mask. And the second step of uniform etching and thinning is to firstly design the distribution of the etching removal amount and optimize the technological parameters of the plasma, and obtain a uniform optical substrate through an etching and thinning intermediate state. The method overcomes the problems of incompatibility of flexible film optical materials, high cost and low efficiency in the traditional technology, and realizes high-efficiency optical substrate processing of compatible flexible film optical materials.
Description
Technical Field
The invention belongs to the field of optical surface processing, and particularly relates to a method for quickly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask.
Background
In the processing technology of uniform optical substrates, the technological route of magnetorheological polishing or ion beam polishing is generally adopted. The magnetorheological polishing process cannot process flexible thin-film optical materials, and the diameter-thickness ratio cannot be lower than a certain numerical value. The ion beam polishing process is not compatible with flexible thin film optical materials, and the surface of the processed optical substrate has large high-frequency roughness, which causes large energy loss in optical applications. Whether magnetorheological or ion beams are adopted, the processing mode of single-point scanning determines that the processing period is exponentially increased along with the increase of the caliber, and the problems of high cost and low efficiency exist.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the invention provides a method for quickly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask, which solves the problems of incompatibility of flexible film optical materials, high cost and low efficiency in the prior art, and realizes high-efficiency optical substrate processing compatible with the flexible film optical materials.
The technical scheme adopted by the invention for solving the technical problems is as follows: a method for rapidly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask comprises the following working procedures that firstly, an initial uniformity test 1 of the optical substrate is carried out, then a photoresist coating thickness distribution test 2 is completed on the surface of the optical substrate, and then a three-dimensional photoresist mask is formed by carrying out photoetching removal amount distribution design 3, gray ultraviolet exposure 4, development and post-baking 5; and the second step of uniform etching and thinning comprises the steps of firstly designing etching removal quantity distribution 6 and optimizing plasma process parameters 7, and obtaining a uniform optical substrate 9 through an etching and thinning intermediate state 8.
Further, the initial uniformity test 1 for the optical substrate is to calibrate the initial thickness distribution of the optical substrate, the optical substrate material includes but is not limited to rigid optical materials such as quartz glass and the like, and flexible optical materials such as polyimide films and the like, for thicker optical materials, a plane interferometer can be used to test the transmission wavefront of the optical substrate, and the thickness distribution of the optical substrate is calculated, for thinner optical materials, the plane interferometer can be used to test the transmission wavefront, and the thickness distribution can also be directly tested by a film thickness meter.
Further, the photoresist coating thickness distribution test 2 is to test the thickness and thickness distribution of the photoresist layer coated on the surface of the optical substrate, a positive photoresist is adopted, including but not limited to products of models AZ3100, AZ1500 and AZ4526, the thickness of the photoresist is adjustable within 1-10 μm, a spin coater is generally adopted to carry out centrifugal spin coating on a small-caliber optical substrate or an optical substrate with a symmetrical shape, a blade coater can also be adopted to carry out photoresist coating on a large-caliber optical substrate or an irregular optical substrate, prebaking is usually required after photoresist coating, namely, the photoresist layer is heated to remove redundant solvent, an oven or a hot plate is generally adopted to carry out prebaking, a film thickness meter is utilized to test the thickness distribution of the photoresist, and the thickness test precision is generally better than 1 ‰.
Further, the photoetching removal amount distribution design 3 is to calculate the removal amount distribution required by the photoresist layer according to the initial uniformity of the optical substrate, the thickness distribution of the photoresist coating and the target thickness distribution of the three-dimensional photoresist mask, and fit an exposure amount distribution function according to the photoetching removal amount distribution in combination with the exposure process empirical parameters.
Further, the gray ultraviolet exposure 4 is exposure of the photoresist layer with adjustable dose by using a designed exposure distribution function. The exposure method includes but is not limited to laser direct writing exposure, digital maskless exposure, moving mask exposure and gray scale mask exposure, and the final effect is to make the distribution of the photosensitive depth of the photoresist layer conform to the photoetching removal amount distribution design.
Further, the developing and post-baking 5 is to wash off the photosensitive photoresist portion with a developing solution to leave the non-photosensitive photoresist portion and further remove the residual solvent of the photoresist by post-baking. The developing solution includes but is not limited to KOH, NaOH, TMAH dilute solution, the contrast of local photoresist removal is realized by using the difference of the dissolution rate of the photosensitive photoresist and the non-photosensitive photoresist in the specific solution in the developing process, the post-baking process is to heat the residual photoresist layer to remove the redundant solvent, an oven or a hot plate is generally adopted for post-baking, and the residual photoresist layer forms a three-dimensional photoresist mask.
Further, the etching removal amount distribution design 6 is to calculate the removal amount distribution required by the residual material according to the initial uniformity of the optical substrate, the thickness distribution of the three-dimensional photoresist mask and the target uniformity of the optical substrate.
Further, the plasma process parameter optimization 7 is to select and optimize the composition and the proportion of the reaction gas according to the specific combination of the optical substrate material and the photoresist material, the reaction gas includes but is not limited to O2, N2, Ar, CHF3, SF6, CF4, so that the mixed reaction gas has the same etching rate to the photoresist and the optical substrate as much as possible, if the target can not be achieved, the etching rate ratio of the photoresist and the optical substrate needs to be determined, and the etching rate ratio needs to be substituted into the design of the distribution of the photoresist removal amount.
Further, the etching thinning intermediate state 8 is a state when the three-dimensional photoresist mask is not completely removed, when the etching rate ratio of the photoresist to the optical substrate is 1, the surface shape of the residual material is completely consistent with the surface shape of the three-dimensional photoresist mask, and when the etching rate ratio of the photoresist to the optical substrate is not 1, the surface shape of the residual material is inconsistent with the surface shape of the three-dimensional photoresist mask. The etching process may be continuous or segmented.
Further, the uniform optical substrate 9 is an optical substrate finally obtained after the etching removal is completed, at this time, the three-dimensional photoresist mask is completely removed, the redundant material of the optical substrate is also removed, and the remaining optical substrate has better thickness uniformity.
Compared with the prior art, the invention has the advantages that:
(1) the invention can realize surface shape control of the quartz substrate with large diameter-thickness ratio and obtain the large-caliber ultrathin quartz window.
(2) The invention can realize the optical polishing of the flexible substrate and obtain the large-caliber thin film optical substrate.
(3) The invention can improve the surface shape control efficiency, avoid the iteration of multiple processing detection and realize one-time surface shape correction.
Drawings
FIG. 1 is a schematic diagram of a three-dimensional photoresist mask fabrication method;
FIG. 2 is a schematic diagram of a uniform etching thinning method;
in the figure: 1, testing the initial uniformity of the optical substrate; 2, testing the distribution of the thickness of the photoresist coating; 3, photoetching removal quantity distribution design; 4, gray ultraviolet exposure; 5, developing and post-baking; 6, designing etching removal amount distribution; 7, optimizing plasma process parameters; 8 is an etching thinning intermediate state; and 9 is a uniform optical substrate.
Detailed Description
The invention is further described with reference to the following figures and detailed description.
As shown in fig. 1-2, a method for rapidly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask comprises two major steps, three-dimensional photoresist mask manufacturing and uniform etching thinning. The method specifically comprises the steps of testing the initial uniformity of the optical substrate, testing the distribution of the thickness of a photoresist coating, designing the distribution of photoetching removal amount, carrying out gray ultraviolet exposure, developing and postbaking, designing the distribution of etching removal amount, optimizing plasma process parameters, etching and thinning the intermediate state and homogenizing the optical substrate.
The initial uniformity test of the optical substrate is to calibrate the initial thickness distribution of the optical substrate. Optical substrate materials include, but are not limited to, rigid optical materials such as quartz glass, and flexible optical materials such as polyimide films. For thicker optical materials, a planar interferometer can be used to measure the transmitted wavefront of the optical substrate and calculate the thickness distribution of the optical substrate. For thinner optical materials, a planar interferometer can be used for measuring the transmission wavefront to calculate the thickness distribution, and a film thickness meter can be directly used for measuring the thickness distribution.
The photoresist coating thickness distribution test is to test the thickness and thickness distribution of the photoresist layer coated on the surface of the optical substrate. The thickness of the positive photoresist is adjustable from 1 to 10 mu m, and the positive photoresist comprises but is not limited to AZ3100, AZ1500, AZ4526 and other products. For small-caliber optical substrates or optical substrates with symmetrical shapes, spin coating is generally carried out by a spin coater, and for large-caliber optical substrates or irregular optical substrates, photoresist coating can also be carried out by a blade coater. A pre-bake is usually required after the photoresist is coated, i.e., the photoresist layer is heated to remove excess solvent, and the pre-bake is usually performed by using an oven or a hot plate. The thickness distribution of the photoresist is tested by using a film thickness meter, and the thickness testing precision is generally better than 1 per thousand.
The photoetching removal amount distribution design is to calculate the removal amount distribution required by the photoresist layer according to the initial uniformity of the optical substrate, the thickness distribution of the photoresist coating and the target thickness distribution of the three-dimensional photoresist mask. And fitting an exposure distribution function according to the photoetching removal amount distribution and the exposure process empirical parameters.
The gray ultraviolet exposure is exposure of the photoresist layer with adjustable dose by utilizing a designed exposure distribution function. Exposure methods include, but are not limited to, laser direct write exposure, digital maskless exposure, moving mask exposure, and gray scale mask exposure. The final effect is to make the distribution of the photosensitive depth of the photoresist layer conform to the design of the distribution of the photoetching removal amount.
The developing and post-baking are to wash off the photosensitive photoresist part by using a developing solution to leave the photosensitive photoresist part and further remove the residual solvent of the photoresist by post-baking. The developing solution includes but is not limited to diluted solutions of KOH, NaOH, TMAH, etc. The development is to realize the contrast of local photoresist removal by utilizing the difference of the dissolution rate of the photosensitive photoresist and the non-photosensitive photoresist in a specific solution. Post-baking is to heat the residual photoresist layer to remove the excess solvent, and generally a baking oven or a hot plate is used for post-baking, and the residual photoresist layer forms a three-dimensional photoresist mask.
The etching removal amount distribution design is to calculate the removal amount distribution required by the residual material according to the initial uniformity of the optical substrate, the thickness distribution of the three-dimensional photoresist mask and the target uniformity of the optical substrate.
The optimization of the plasma process parameters is to screen and optimize the composition and proportion of reaction gases according to the specific combination of the optical substrate material and the photoresist material, wherein the reaction gases include but are not limited to O2, N2, Ar, CHF3, SF6, CF4 and the like, and the mixed reaction gases have the same etching rate to the photoresist and the optical substrate as much as possible. If this goal is not achieved, the etch rate ratio of the photoresist and the optical substrate needs to be determined and substituted into the lithographic removal profile design.
The etching thinning intermediate state is a state when the three-dimensional photoresist mask is not completely removed, when the etching rate ratio of the photoresist to the optical substrate is 1, the surface shape of the residual material is completely consistent with the surface shape of the three-dimensional photoresist mask, and when the etching rate ratio of the photoresist to the optical substrate is not 1, the surface shape of the residual material is inconsistent with the surface shape of the three-dimensional photoresist mask. The etching process may be continuous or segmented.
The uniform optical substrate is an optical substrate finally obtained after the etching removal is finished. At the moment, the three-dimensional photoresist mask is completely removed, redundant materials of the optical substrate are also removed, and the remaining optical substrate has better thickness uniformity.
The working process is as follows: the first step is the fabrication of a three-dimensional photoresist mask. The method comprises the steps of firstly calibrating initial thickness distribution of an optical substrate, then coating a photoresist layer on the surface of the optical substrate and testing the thickness and the thickness distribution, calculating the removal amount distribution required by the photoresist layer according to the initial uniformity of the optical substrate, the thickness distribution of the photoresist layer and the target thickness distribution of a three-dimensional photoresist mask, then carrying out adjustable dose exposure on the photoresist layer by using a designed exposure amount distribution function, washing off a photosensitive photoresist part by using a developing solution, leaving an unexposed photoresist part, and then baking to further remove residual solvent of the photoresist to form the three-dimensional photoresist mask. The second step is uniform etching thinning. Calculating the removal amount distribution required by the residual material according to the initial uniformity of the optical substrate, the thickness distribution of the three-dimensional photoresist mask and the target uniformity of the optical substrate, enabling the mixed reaction gas to have the same etching rate on the photoresist and the optical substrate through plasma process parameter optimization, and completely removing the residual three-dimensional photoresist mask to obtain the uniform optical substrate.
Claims (10)
1. A method for rapidly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask is characterized in that the method comprises the following working procedures: firstly, performing an initial uniformity test (1) on an optical substrate, then completing a photoresist coating thickness distribution test (2) on the surface of the optical substrate, and then performing photoetching removal amount distribution design (3), gray ultraviolet exposure (4), development and post-baking (5) to form a three-dimensional photoresist mask; and the second step of uniform etching and thinning comprises the steps of etching removal amount distribution design (6) and plasma process parameter optimization (7), and obtaining a uniform optical substrate (9) through an etching and thinning intermediate state (8).
2. The method for rapidly correcting the uniformity of the optical substrate based on the three-dimensional photoresist mask as claimed in claim 1, wherein the initial uniformity test (1) of the optical substrate is to calibrate the initial thickness distribution of the optical substrate, the optical substrate material includes but is not limited to rigid optical materials such as quartz glass and the like, and flexible optical materials such as polyimide films and the like, for thicker optical materials, the thickness distribution of the optical substrate can be calculated by using a plane interferometer to test the transmission wavefront of the optical substrate, and for thinner optical materials, the thickness distribution can be calculated by using the plane interferometer to test the transmission wavefront, or the thickness distribution can be directly tested by using a film thickness meter.
3. The method for rapidly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask as claimed in claim 1, the method is characterized in that the photoresist coating thickness distribution test (2) is to test the thickness and the thickness distribution of a photoresist layer coated on the surface of an optical substrate, positive photoresist is adopted, including but not limited to AZ3100, AZ1500 and AZ4526 products, the thickness of the photoresist is 1-10 mu m adjustable, for small-caliber optical substrates or optical substrates with symmetrical shapes, spin coating is generally carried out centrifugally by a spin coater, for large-caliber optical substrates or irregular optical substrates, a blade coater can also be adopted for coating the photoresist, prebaking is usually required after the photoresist is coated, the photoresist layer is heated to remove the redundant solvent, a baking oven or a hot plate is generally adopted for prebaking, a film thickness meter is utilized to test the thickness distribution of the photoresist, and the thickness test precision is generally better than 1 per thousand.
4. The method for rapidly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask as claimed in claim 1, wherein the lithography removal amount distribution design (3) is to calculate the removal amount distribution required by the photoresist layer according to the initial uniformity of the optical substrate, the thickness distribution of the photoresist coating and the target thickness distribution of the three-dimensional photoresist mask, and fit the exposure amount distribution function according to the lithography removal amount distribution in combination with the empirical parameters of the exposure process.
5. The method for three-dimensional photoresist mask based rapid correction of optical substrate uniformity as claimed in claim 1, wherein the gray scale uv exposure (4) is a dose-adjustable exposure of the photoresist layer using a designed exposure distribution function, the exposure methods include but are not limited to laser direct write exposure, digital maskless exposure, moving mask exposure and gray scale mask exposure, and the final effect is to make the distribution of the photosensitive depth of the photoresist layer conform to the lithography removal amount distribution design.
6. The method for rapidly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask as claimed in claim 1, wherein the developing and post-baking (5) comprises washing off the exposed photoresist portion with a developing solution, leaving the unexposed photoresist portion, and post-baking to further remove the residual solvent of the photoresist, the developing solution includes but is not limited to KOH, NaOH, and TMAH dilute solutions, the developing process comprises using the difference between the dissolution rates of the exposed and unexposed photoresist in a specific solution to achieve the contrast ratio of the local removal of the photoresist, the post-baking process comprises heating the residual photoresist layer to remove the excess solvent, and the oven or hot plate is used for post-baking to form the three-dimensional photoresist mask on the residual photoresist layer.
7. The method for rapidly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask as claimed in claim 1, wherein the etching removal amount distribution design (6) is to calculate the removal amount distribution required for the remaining material according to the initial uniformity of the optical substrate, the thickness distribution of the three-dimensional photoresist mask and the target uniformity of the optical substrate.
8. The method for rapidly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask as claimed in claim 1, wherein the optimization (7) of the plasma process parameters is to screen and optimize the composition and the ratio of the reaction gases including but not limited to O2, N2, Ar, CHF3, SF6, CF4 according to the specific combination of the optical substrate material and the photoresist material, so that the mixed reaction gases have the same etching rate to the photoresist and the optical substrate as much as possible, if the etching rate ratio between the photoresist and the optical substrate cannot be achieved, the etching rate ratio needs to be determined and substituted into the design of the distribution of the photoresist removal amount.
9. The method for rapidly correcting the uniformity of the optical substrate based on the three-dimensional photoresist mask as claimed in claim 1, wherein the etching thinning intermediate state (8) is a state in which the three-dimensional photoresist mask is not completely removed, when the etching rate ratio of the photoresist to the optical substrate is 1, the surface shape of the residual material is completely consistent with the surface shape of the three-dimensional photoresist mask, and when the etching rate ratio of the photoresist to the optical substrate is not 1, the surface shape of the residual material is not consistent with the surface shape of the three-dimensional photoresist mask, and the etching process can be continuous or segmented.
10. The method for rapidly correcting the uniformity of an optical substrate based on a three-dimensional photoresist mask according to claim 1, wherein the uniform optical substrate (9) is an optical substrate finally obtained after the etching removal is completed, at this time, the three-dimensional photoresist mask is completely removed, the redundant material of the optical substrate is also removed, and the remaining optical substrate has better thickness uniformity.
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| CN111474822B (en) | 2021-09-17 |
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