CN108242398A - Method for Forming Complex Curved Surface on Wafer Surface - Google Patents
Method for Forming Complex Curved Surface on Wafer Surface Download PDFInfo
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- CN108242398A CN108242398A CN201611207872.0A CN201611207872A CN108242398A CN 108242398 A CN108242398 A CN 108242398A CN 201611207872 A CN201611207872 A CN 201611207872A CN 108242398 A CN108242398 A CN 108242398A
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 72
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000011031 large-scale manufacturing process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The application provides a method for forming a complex curved surface on the surface of a wafer, which comprises the following steps: forming photoresist on the surface of the wafer; exposing the photoresist by using a photomask graph with first gray scale distribution, and developing the exposed photoresist to convert the first gray scale distribution in the photomask graph into first thickness distribution of the photoresist so as to form a curved surface on the surface of the photoresist; and etching the photoresist, and etching the surface of the photoresist and the surface of the wafer to transfer the curved surface of the photoresist surface to the surface of the wafer. According to the application, a curved surface can be formed on the surface of the wafer.
Description
Technical field
This application involves technical field of manufacturing semiconductors more particularly to a kind of methods for forming curved surface on the surface of chip.
Background technology
In semiconductor technology, it is planarization process the characteristics of silicon materials surface processing technique, that is, in silicon wafer surface
X-direction and Y-direction are processed.In recent years, deep trouth technique has been developed, that is, use the mode of dry etching or wet etching
Groove is formed in silicon face.
It is to manufacture parallel with the surface of semi-conducting material or be in mostly in existing semiconductor material surface processing technology
The plane of certain degree even deep trouth technique, is also only hung down on the basis of planar technology pair with the surface of semi-conducting material
Straight face carries out fluting processing to form plane, and seldom processes smooth surface.
With the development of semiconductor technology, the requirement that curved surface is processed on the surface of semi-conducting material is more and more, related
Research also gradually carry out.For example, non-patent document 1 (《Silicon substrate freeform optics microlens array makes and optical property is ground
Study carefully》, Sun Yanjun etc.,《Infrared technique》The 1st phase of volume 34) it discloses, the photoresist of substrate surface is being carried out using laser beam
During exposure, control laser beam realizes the change dose exposure to photoresist, after development in the time for exposure of different location
The surface of photoresist forms particular curvature, then, is shifted the particular curvature on photoresist surface by the method that the particle beams etches
To substrate surface.
It should be noted that the introduction of technical background is intended merely to above it is convenient the technical solution of the application is carried out it is clear,
Complete explanation, and facilitate the understanding of those skilled in the art and illustrate.Cannot merely because these schemes the application's
Background technology part is expounded and thinks that above-mentioned technical proposal is known to those skilled in the art.
Apply for content
The inventors of the present application found that technology disclosed in non-patent document 1 at least there are it is following the shortcomings that：Pass through control
Laser beam realizes the change dose exposure to photoresist in the time for exposure of different location, wherein, it the position control of laser beam and exposes
Control difficulty between light time is larger, and taking for exposure process is too long, is unsuitable for large-scale production also, by laser beam in photoetching
The influences such as the scattering in glue, the smoothness of finally formed curved surface can be affected.
The application provides a kind of method for forming curved surface on the surface of chip, utilizes the photomask with specific intensity profile
Figure is exposed photoresist, to form the photoresist with curved surface, and the curved surface of photoresist is transferred to crystalline substance
The surface of piece, so as to form curved surface on the surface of chip.
According to the one side of the embodiment of the present application, provide and a kind of complex-curved method, the party are formed in wafer surface
Method includes：
Photoresist is formed on the surface of chip；
The photoresist is exposed, and make the photoetching after exposure using the photomask pattern with the first intensity profile
Glue develops, and the first thickness that first intensity profile in the photomask pattern is converted into the photoresist is distributed,
So as to form curved surface on the photoresist surface；And
The surface on surface and the chip to the photoresist performs etching, and the curved surface on the photoresist surface is turned
Move on to the surface of the chip.
According to the other side of the embodiment of the present application, wherein, in the step of etching, the photoresist and the chip
Etching selection ratio be 1：1-1：50.
According to the other side of the embodiment of the present application, wherein, in the step of etching, to different parts in etch areas
Etch period it is identical.
According to the other side of the embodiment of the present application, wherein, what the wafer surface that thinner photoresist covers was etched
Depth is deeper.
According to the other side of the embodiment of the present application, wherein, the time of the exposure is 200 milliseconds -800 milliseconds.
According to the other side of the embodiment of the present application, wherein, the first intensity profile of the photomask pattern is at least
According to target surface, the gray scale of the etching selection ratio and the photomask pattern of the photoresist and the chip with it is described
Relationship between the exposure depth of photoresist is come determining.
The advantageous effect of the application is：Required smooth surface can be formed on the surface of chip, and suitable for big
Large-scale production.
With reference to following explanation and attached drawing, the particular implementation of the application is disclosed in detail, specifies the original of the application
Reason can be in a manner of adopted.It should be understood that presently filed embodiment is not so limited in range.In appended power
In the range of the spirit and terms of profit requirement, presently filed embodiment includes many changes, modifications and is equal.
The feature for describing and/or showing for a kind of embodiment can be in a manner of same or similar one or more
Used in a other embodiment, with the feature in other embodiment it is combined or substitute other embodiment in feature.
It should be emphasized that term "comprises/comprising" refers to the presence of feature, one integral piece, step or component when being used herein, but simultaneously
It is not excluded for the presence or additional of one or more other features, one integral piece, step or component.
Description of the drawings
Included attached drawing is used for providing being further understood from the embodiment of the present application, and which constitute one of specification
Point, for illustrating presently filed embodiment, and with word description come together to illustrate the principle of the application.Under it should be evident that
Attached drawing in the description of face is only some embodiments of the present application, for those of ordinary skill in the art, is not paying wound
Under the premise of the property made is laborious, other attached drawings are can also be obtained according to these attached drawings.In the accompanying drawings：
Fig. 1 is to form a schematic diagram of the method for curved surface on the surface of chip in the embodiment of the present application；
Fig. 2 is to form a process flow diagram of the method for curved surface on the surface of chip in the embodiment of the present application.
Specific embodiment
With reference to attached drawing, by following specification, the aforementioned and other feature of the application will be apparent.In specification
In attached drawing, the particular implementation of the application is specifically disclosed, which show the portions for the principle that the application wherein may be used
Divide embodiment, it will thus be appreciated that the application is not limited to described embodiment, on the contrary, the application includes falling into appended power
Whole modifications, modification and equivalent in the range of profit requirement.
Embodiment 1
The embodiment of the present application 1 provide it is a kind of complex-curved method is formed on the surface of chip, on the surface of chip
Form complicated smooth surface.
Fig. 1 is a schematic diagram for forming complex-curved method in the embodiment of the present application in wafer surface, such as Fig. 1 institutes
Show, this method includes：
Step 101 forms photoresist on the surface of chip；
Step 102 is exposed, and make exposure the photoresist using the photomask pattern with the first intensity profile
First intensity profile in the photomask pattern is converted into the first thickness of the photoresist by photoresist developing afterwards
Degree distribution, so as to form curved surface on the photoresist surface；And
Step 103, etching photoresist, the surface on surface and the chip to the photoresist performs etching, by institute
The curved surface for stating photoresist surface is transferred to the surface of the chip.
Through this embodiment, photoresist is exposed using the photomask pattern with specific intensity profile, to be formed
Photoresist with curved surface, and the curved surface of photoresist is transferred to the surface of chip, so as in the surface shape of chip
Into curved surface, thereby, it is possible to form smooth curved surface on the surface of chip in simple method, and suitable for large-scale production.
In the present embodiment, which can be common substrate in field of semiconductor manufacture, such as Silicon Wafer, insulator
On silicon (Silicon-On-Insulator, SOI) wafer, germanium Silicon Wafer or gallium nitride (Gallium Nitride, GaN) it is brilliant
Circle etc.；Also, the wafer can not carried out the wafer of semiconductor technology processing or carried out processing
Wafer, such as the wafer that the process such as ion implanting, etching and/or diffusion are crossed was carried out, the present embodiment is not intended to limit this.
In the step 101 of the present embodiment, can be formed on the surface of chip has certain thickness photoresist, the photoetching
The thickness of glue is uniform.The method for forming photoresist can refer to the prior art, and the present embodiment repeats no more.
In the step 102 of the present embodiment, can use with the first intensity profile photomask pattern to photoresist into
Row exposure, the photomask pattern is such as can be the figure on photolithography plate.
During exposure, behind the region that the light of exposure passes through the gray scale of photomask pattern different, there is difference
Energy, lead to the corresponding region of photoresist there is different exposure energy and exposure depth, as a result, photomask pattern as a result,
The first intensity profile be converted into the distribution of the exposure depth on photoresist.
In a step 102, the photoresist after exposure is developed, photoresist of the formation with first thickness distribution, and
The surface of photoresist forms curved surface, and first thickness distribution is corresponding with the distribution of exposure depth, so also with photomask pattern
First intensity profile corresponds to.
In a step 102, the first intensity profile of photomask pattern at least can be according to target surface, photoresist and crystalline substance
Relationship between the etching selection ratio of piece and the gray scale of photomask pattern and the exposure depth of photoresist is come determining.For example,
The empirical equation of the fitting of the relationship between the first intensity profile and above-mentioned each factor can be previously obtained by many experiments,
Also, when manufacturing curved surface, the empirical equation and target surface can be based on, to determine the first gray scale of photomask pattern point
Cloth.
In a step 102, the time of exposure can be 200 milliseconds -800 milliseconds, if long or too short, can all make exposure
The distribution of depth can not meet scheduled demand.
In step 103, photoresist surface and wafer surface are performed etching, which for example can be dry etching,
For example, reactive ion etching etc..
In step 103, relatively thin photoresist is etched away first, with the continuation of etching, the thinner part institute of photoresist
The surface of the chip of covering is further etched, meanwhile, the thicker portion of photoresist is also gradually etched, until all photoresists
It is all etched away, the curved surface on photoresist surface is then transferred to the surface of chip.
Due between photoresist and wafer material there are etching selection ratio, so, the curved surface on photoresist surface is being transferred to
Part can occur during wafer surface to deform, which is, for example, 1：1-1：50, wherein, which can basis
Different photoresist type and change.
In step 103, can be identical to the etch period of different parts in etch areas, thereby, it is possible to make can be
Journey simplifies.Certainly, the application is without being limited thereto, can not also be identical to the etch period of different parts in etch areas.
In step 103, the depth that the wafer surface of thinner photoresist covering is etched is deeper.
Through this embodiment, photoresist is exposed using the photomask pattern with specific intensity profile, to be formed
Photoresist with curved surface, and the curved surface of photoresist is transferred to the surface of chip, so as in the surface shape of chip
Into curved surface, thereby, it is possible to form smooth curved surface on the surface of chip in simple method, and suitable for large-scale production.
In the following, with reference to specific example, illustrate the method for the formation curved surface of the present embodiment.
Fig. 2 is the process flow chart schematic diagram of the formation curved surface of the embodiment of the present application.
As shown in Fig. 2, photomask pattern 301 has the first intensity profile；
Such as the A of Fig. 2) shown in, using photomask pattern 301, process is exposed and developed, is formed on the surface of silicon wafer 201
Photoetching offset plate figure 202, the surface of photoetching offset plate figure 202 are curved surface, the first intensity profile phase of the curved surface and photomask pattern 301
It is corresponding.
Such as the B of Fig. 2)-D) shown in, the surface on surface and chip 201 to photoresist 202 performs etching, thus by photoetching
The curved surface on the surface of glue pattern 202 is transferred to the surface of chip 201.
According to an embodiment of the present application, smooth curved surface can be formed on the surface of substrate, improves the processing to chip
Ability, and can be adapted to mass produce.
The application is described above in association with specific embodiment, it will be appreciated by those skilled in the art that this
A little descriptions are all exemplary, and are not the limitation to the application protection domain.Those skilled in the art can be according to the application
Spirit and principle various variants and modifications are made to the application, these variants and modifications are also within the scope of application.
Claims (6)
1. a kind of form complex-curved method in wafer surface, which is characterized in that this method includes：
Photoresist is formed on the surface of chip；
The photoresist is exposed, and show the photoresist after exposure using the photomask pattern with the first intensity profile
Shadow, the first thickness that first intensity profile in the photomask pattern is converted into the photoresist are distributed, so as to
Curved surface is formed on the photoresist surface；And
The surface on surface and the chip to the photoresist performs etching, and the curved surface on the photoresist surface is transferred to
The surface of the chip.
2. complex-curved method is formed in wafer surface as described in claim 1, which is characterized in that
In the step of etching, the etching selection ratio of the photoresist and the chip is 1：1-1：50.
3. complex-curved method is formed in wafer surface as described in claim 1, which is characterized in that etching the step of
In, it is identical to the etch period of different parts in etch areas.
4. complex-curved method is formed in wafer surface as claimed in claim 3, which is characterized in that
The depth that the wafer surface of thinner photoresist covering is etched is deeper.
5. the method for forming curved surface on the surface of chip as described in claim 1, which is characterized in that
The time of the exposure is 100 milliseconds -800 milliseconds.
6. complex-curved method is formed in wafer surface as described in claim 1, which is characterized in that
First intensity profile of the photomask pattern is at least the etching according to target surface, the photoresist and the chip
Relationship between selection ratio and the gray scale of the photomask pattern and the exposure depth of the photoresist is come determining.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611207872.0A CN108242398A (en) | 2016-12-23 | 2016-12-23 | Method for Forming Complex Curved Surface on Wafer Surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611207872.0A CN108242398A (en) | 2016-12-23 | 2016-12-23 | Method for Forming Complex Curved Surface on Wafer Surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108242398A true CN108242398A (en) | 2018-07-03 |
Family
ID=62703667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611207872.0A Pending CN108242398A (en) | 2016-12-23 | 2016-12-23 | Method for Forming Complex Curved Surface on Wafer Surface |
Country Status (1)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585484A (en) * | 2018-12-04 | 2019-04-05 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110164944A (en) * | 2019-06-03 | 2019-08-23 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, mask plate, display device |
| CN112731774A (en) * | 2020-12-31 | 2021-04-30 | 嘉兴驭光光电科技有限公司 | Method for manufacturing micro-nano optical device |
| CN113277465A (en) * | 2020-02-19 | 2021-08-20 | 上海新微技术研发中心有限公司 | Method for manufacturing spherical structure |
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| CN1705915A (en) * | 2003-01-23 | 2005-12-07 | 美商福昌公司 | Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same |
| CN101950126A (en) * | 2010-09-08 | 2011-01-19 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing three-dimensional smooth curved surface microstructure based on SU-8 thick photo-resist |
| CN105372726A (en) * | 2015-12-14 | 2016-03-02 | 中山大学 | Diamond micro lens array and preparation method thereof |
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2016
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| CN1705915A (en) * | 2003-01-23 | 2005-12-07 | 美商福昌公司 | Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same |
| CN1556442A (en) * | 2004-01-06 | 2004-12-22 | 中国人民解放军国防科学技术大学 | Binary optica device grey scale changing mask method and device for making |
| CN101950126A (en) * | 2010-09-08 | 2011-01-19 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing three-dimensional smooth curved surface microstructure based on SU-8 thick photo-resist |
| CN105372726A (en) * | 2015-12-14 | 2016-03-02 | 中山大学 | Diamond micro lens array and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585484A (en) * | 2018-12-04 | 2019-04-05 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110164944A (en) * | 2019-06-03 | 2019-08-23 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, mask plate, display device |
| CN113277465A (en) * | 2020-02-19 | 2021-08-20 | 上海新微技术研发中心有限公司 | Method for manufacturing spherical structure |
| CN112731774A (en) * | 2020-12-31 | 2021-04-30 | 嘉兴驭光光电科技有限公司 | Method for manufacturing micro-nano optical device |
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Application publication date: 20180703 |