CN107851551A - The processing method of base material, temporary transient fixing composition and semiconductor device - Google Patents

The processing method of base material, temporary transient fixing composition and semiconductor device Download PDF

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Publication number
CN107851551A
CN107851551A CN201680041470.XA CN201680041470A CN107851551A CN 107851551 A CN107851551 A CN 107851551A CN 201680041470 A CN201680041470 A CN 201680041470A CN 107851551 A CN107851551 A CN 107851551A
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base material
temporary transient
layer
temporarily fixed
supporter
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CN107851551B (en
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丸山洋郎
丸山洋一郎
森隆
水野光
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JSR Corp
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JSR Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention provides a kind of processing method of base material, it is the method for the mobile processing of processing of the progress base material in the state of being temporarily fixed on supporter by base material via temporary transient fixed material, easily can be removed the adhesive linkage residued in after self-supporter separation substrate on base material by peeling off and/or solvent cleaning.The processing method of the base material of the present invention includes successively：The step of forming layered product, the layered product has supporter, temporarily fixed material and base material, and the temporary transient fixed material is to be contacted with the face with the support side in the base material and by the temporary transient fixed material layer (I) formed containing the composition selected from least one of polybenzoxazole precursor and polybenzoxazole polymer and the temporary transient fixed material for supporting the temporary transient fixed material layer (II) on the face on side and containing light absorber being formed in the layer (I)；The base material is processed, and/or makes the step of the layered product movement；The step of to the layer (II) irradiation light；The step of base material being separated from the supporter；And from the base material remove layer (I) the step of.

Description

The processing method of base material, temporary transient fixing composition and semiconductor device
Technical field
The present invention relates to a kind of processing method of base material, temporary transient fixing composition and semiconductor device.
Background technology
It is proposed has：Material is being fixed by substrate bondings such as semiconductor crystal wafers in the shape on the supporters such as glass substrate via temporary transient Under state, to the method for the base material progress step such as grinding back surface and photosensitive etching and processing.It is required for the temporarily fixed material Be：Base material can be temporarily fixed in working process on supporter, after working process can self-supporter be easily separated Base material.
It is proposed has：In the separating treatment, by the layered product comprising supporter, temporary transient fixed material and base material The temporarily fixed material irradiation radiant such as ultraviolet and infrared ray, make the adhesion of temporarily fixed material reduce and self-supporting The method of body separation substrate.
For example, in patent document 1, disclosing has transparent branch by the temporary transient material of fixing comprising peel ply and adhesive linkage Support body and the semiconductor crystal wafer temporarily fixed layered product formed, and propose the support side one side scanning laser for having by self-induced transparency One is irradiated in face of peel ply, makes the adhesion of peel ply reduce and the method for self-supporter peeling base.
Prior art literature
Patent document
Patent document 1：No. 2014/0106473 publication of US publication
The content of the invention
Invent problem to be solved
In the method for self-supporter peeling base before, laser is irradiated on the support side of self-induced transparency to peel ply, therefore And produced sometimes in peel ply because of laser irradiation and the local heat for reaching 1000 DEG C or so.Also conduction is extremely bonded caused heat Layer, so cause the deterioration of adhesive linkage.The deterioration of adhesive linkage can cause following problem：By lift-off processing or solvent can not be used Cleaning treatment easily by the base material after stripping adhesive linkage remove.
Problem of the invention is that providing a kind of processing method of base material, it is via temporary transient fixed material that base material is temporary transient The method that the mobile processing of processing of base material is carried out in the state of being fixed on supporter, can be for example, by stripping and/or solvent Clean and easily remove the adhesive linkage residued in after self-supporter separation substrate on base material.
The technological means solved the problems, such as
The present inventor et al. has carried out making great efforts research to solve described problem.Its result, which finds to utilize, has following structure Into the processing method of base material can solve described problem, so as to complete the present invention.
That is, the present invention for example relates to following [1]~[8].
[1] a kind of processing method of base material, it includes successively：(1) the step of forming layered product, the layered product has branch Support body, temporarily fixed material and base material, temporarily fixed material described herein is to be connect with the face with the support side in the base material Touch and temporary transient by being formed containing the composition selected from least one of polybenzoxazole precursor and polybenzoxazole polymer On the face on fixed material layer (I) and the support side being formed in the temporarily fixed material layer (I) and containing the temporary of light absorber When fix material layer (II)；(2) base material is processed, and/or makes the step of the layered product movement；(3) to described temporary When fix material layer (II) irradiation light the step of；(4) the step of separating the base material from the supporter；And (5) from the base Material removes the step of temporarily fixed material layer (I).
[2] processing method for the base material that according to [1] is recorded, wherein the composition contains polybenzoxazole precursor.
[3] processing method for the base material that according to [1] or [2] is recorded, wherein the temporarily fixed material layer (II) and then Contain pyrolytic resin.
[4] processing method for the base material that any one of [1]~[3] according to are recorded, wherein in the step (3), Light to temporarily fixed material layer (II) irradiation is ultraviolet.
[5] processing method for the base material that according to [4] are recorded, wherein the ultraviolet is wavelength 300nm~400nm's Ultraviolet.
[6] processing method for the base material that any one of [1]~[5] according to are recorded, wherein in the step (5), By peeling off the processing of the temporarily fixed material layer (I) from the base material and/or using solvent to the temporarily fixed material layer (I) The processing cleaned and remove the temporarily fixed material layer (I) from the base material.
[7] a kind of semiconductor device, it is the processing side for the base material for utilizing any one of [1]~[6] according to record Method and obtain.
[8] a kind of temporary transient fixing composition, it contains in polybenzoxazole precursor and polybenzoxazole at least A kind of polymer.
The effect of invention
According to the present invention, it is possible to provide a kind of processing method of base material, it is via temporary transient fixed material that base material is temporarily solid The method that the mobile processing of processing of base material is carried out in the state of on supporter, can be clear for example, by stripping and/or solvent Wash and easily remove the adhesive linkage residued in after self-supporter separation substrate on base material.
Brief description of the drawings
[Fig. 1] Fig. 1 is the profile of the embodiment of the layered product in the present invention.
Embodiment
Hereinafter, in the raw material group to the layered product formed in the present invention and the temporary transient fixed material for forming the layered product Compound is after temporary transient fixing composition illustrates, processing method to base material and using the base material processing method and The semiconductor device obtained illustrates.
In the present invention, when so-called temporarily fixed material refers to be processed base material and/or be mobile, in order to will not with base material Self-supporter deviates the material that base material is temporarily fixed to use on supporter by mobile mode.
1. layered product
In the layered product formed in the present invention, as processing or mobile object base material be via it is temporary transient fixation material and It is temporarily fixed on supporter.The temporarily fixed material is by base material and supporter clamping in one embodiment.
The temporarily fixed material have contact with the face on the support side in the base material temporarily fix material layer (I), with And it is formed at the temporary transient fixed material layer (II) on the face on the support side in the layer (I).Layer (I) is by containing selected from Ju Ben Bing Evil The temporary transient fixing composition of at least one of azoles precursor and polybenzoxazole polymer is formed.Layer (II) contains light absorbs Agent, it is preferably and then contains pyrolytic resin.
Think that what is contacted with base material is temporary in the case of using the temporary transient fixing composition containing polybenzoxazole precursor When fixing material layer (I) in the formation of the layer (I), the formation of layered product or base material processing when be heated, thus polyphenyl is simultaneously Oxazole precursor becomes the polybenzoxazole for turning to excellent heat resistance.Therefore, can suppress because of the light irradiation to temporary transient fixed material layer (II) And the temporarily deterioration of fixed material layer (I) caused by heat caused by part.Therefore, deduction can utilize stripping and solvent cleaning etc. simple Method by the layer (I) residued in after the separating treatment of base material on base material remove.
In the present invention, temporarily fixed material have layer (I) and with the layer (I) directly contact or clip other layers and The layer (II) of formation.In this way, the temporary transient fixed material with more than two layers of layer can balance well have protection base material with Circuit face, the adherence of base material and supporter, the separation property and working process of base material self-supporter when photo-irradiation treatment when The function such as heat resistance.
The example of the layered product is shown in Figure 1.The layered product 1 has supporter 10, is formed on supporter 10 Temporary transient fixed material 20 and the base material 30 that is temporarily fixed to by temporarily fixing material 20 on supporter 10.Temporarily fixed material 20 has There is the temporary transient fixed material layer (I) 21 contacted with base material 30 and be formed on the layer (I) 21 and contacted with supporter 10 temporary When fix material layer (II) 22.
In the layered product, in addition to layer (I) and layer (II), temporarily fixed material can also have other arbitrary layers. For example, intermediate layer can be set between layer (I) and layer (II), in addition, also other layers can be set between supporter at layer (II). Particularly preferably it is two layers of temporary transient fixed material formed by layer (I) and layer (II).
The gross thickness of the temporarily fixed material can be at the size, working process and light irradiation according to the temporary transient stationary plane of base material The degree of required heat resistance and the adhesion of base material and supporter in reason and arbitrarily select.The temporarily fixed material Gross thickness be usually more than 0.2 μm and below 1mm, preferably more than 2 μm and below 0.5mm, more preferably more than 2 μm and Below 0.3mm.In addition, the thickness of each layer of layer (I) and layer (II) is usually 0.1 μm~500 μm, preferably 1 μm~250 μm, More preferably 1 μm~150 μm.If these thickness is in the scope, temporarily fixed material has to base material is temporarily solid Fixed sufficient confining force, base material will not come off in working process or mobile processing from temporary transient stationary plane.
Various working processes, for example various material tables required by scene of the temporarily fixed material in modern economic activities When the miniaturization working process in face, the installation of various surfaces, carrying of semiconductor crystal wafer or semiconductor element etc., can suitably it be used as The temporary transient set material of base material.
[temporarily fixed material layer (I)]
Temporarily fixed material layer (I) can be by containing selected from the polymerization of at least one of polybenzoxazole precursor and polybenzoxazole Temporary transient fixing composition (I) formation of thing.Temporary transient fixing composition (I) can also contain solvent.
As temporary transient fixing composition (I), so that it may the aspect of uniform temporarily fixed material layer (I) in further forming face For be preferably the composition containing polybenzoxazole precursor.
For the viewpoint of the heat resistance of the layer (I), temporarily the 5% weight reduction temperature of fixed material layer (I) is preferably More than 350 DEG C, more preferably more than 400 DEG C.5% weight of the layer (I), which reduces temperature, to be existed using thermogravimetry (TGA) Under nitrogen environment, with programming rate, 10 DEG C/min are measured.
<Polybenzoxazole precursor and polybenzoxazole>
Polybenzoxazole precursor, in inner molecular reaction, and hastily becomes if heated and turns to the poly- benzene with heat resistance and Evil Azoles.It is therefore contemplated that when the layer with polybenzoxazole precursor is heated to high temperature, the polybenzoxazole precursor change turns to poly- Benzoxazole, thus heat resistance improves.
As polybenzoxazole precursor, such as the polymer with the construction unit shown in formula (1) can be enumerated.Ju Ben Bing Evil Azoles precursor can be the polymer with a kind of polymer of construction unit, or with two or more construction units.
[changing 1]
In formula (1), X is the direct organic group of bond or divalence, Y for tetravalence aromatic series base, be bonded to Y N and OH into Right, each couple of N and OH is bonded on the adjacent carbon atom on same aromatic rings.
As the organic group of the divalence in X, such as can enumerate：Can the arlydene through the carbon number 6~20 of halogenation, formula (g1)：- Ar1-R1-Ar1- represented the base of divalence, the alkane diyl of carbon number 1~10, the cycloalkanes diyl of carbon number 3~20, divalence it is siliceous Base.
In formula (g1), Ar1Separately for can the arlydene through the carbon number 6~20 of halogenation, R1For directly bond or divalence Base.As the base of divalence, such as can enumerate：Oxygen atom, sulphur atom, sulfonyl, carbonyl, can be through the carbon number 1~10 of halogenation Alkane diyl.
As can the arlydene through the carbon number 6~20 of halogenation, such as can enumerate：Phenylene, methylphenylene, the tert-butyl group are sub- Phenyl, fluorine phenylene, chlorine phenylene, bromine phenylene, naphthylene.As the alkane diyl of carbon number 1~10, such as can enumerate：Methylene Base, ethane -1,2- diyl.As can the alkane diyl through the carbon number 1~10 of halogenation, such as can enumerate：Methylene, dimethylated methylene Base, double (trifluoromethyl) methylene.As the cycloalkanes diyl of carbon number 3~20, such as can enumerate：Ring fourth diyl, the diyl of ring penta, ring Dihexyl.As the siliceous base of divalence, such as tetraphenyl silane -4,4 '-diyl can be enumerated.
As the aromatic series base of the tetravalence in Y, such as can enumerate：Tetravalence from aromatic hydrocarbons such as phenyl ring, naphthalene nucleus, anthracene nucleus Base, formula (g2)：＞ Ar2-R2-Ar2The base of tetravalence represented by ＜.
In formula (g2), Ar2It is separately the base of the trivalent from aromatic hydrocarbons such as phenyl ring, naphthalene nucleus, anthracene nucleus, R2 is straight Connect the base of bond or divalence.As the base of divalence, such as can enumerate：Oxygen atom, sulphur atom, sulfonyl, carbonyl, can be through halogenation The alkane diyl of carbon number 1~10.
As formation Y or Ar2Aromatic hydrocarbon, such as can enumerate：The aromatic hydrocarbon of the carbon numbers such as benzene, naphthalene, anthracene 6~20.Make For can the alkane diyl through the carbon number 1~10 of halogenation, such as can enumerate：Methylene, dimethylated methylene base, double (trifluoromethyl) methylenes Base.
Polybenzoxazole precursor for example can be using one of dicarboxylic acids and its derivative or both and dihydroxy diamine as original Expect and obtain.
As the dicarboxylic acids, such as can enumerate：Double (the 4- carboxyl phenyls) six of M-phthalic acid, terephthalic acid (TPA), 2,2- Fluoro-propane, 4,4 '-diphenyl dicarboxylic acid, 4,4 '-dicarboxydiphenyl ether, 4,4 '-dicarboxyl tetraphenyl silane, double (4- carboxyl benzene Base) sulfone, 2,2- double (to carboxyl phenyl) propane, 5- tert-butyl isophthalic acids, 5- bromines M-phthalic acid, 5- fluorine isophthalic diformazans The fragrant family dicarboxylic acids such as acid, 5- chlorine M-phthalic acid, 2,6- naphthalene dicarboxylic acids；1,2- cyclobutane dicarboxylic acid, Isosorbide-5-Nitrae-hexamethylene two The fatty family dicarboxylic acids such as carboxylic acid, 1,3- cyclopentane dicarboxylic acids, ethanedioic acid, malonic acid, succinic acid.The dicarboxylic acids can individually make With one kind, also can and with two or more.In these, so that it may for the aspect for obtaining the good polybenzoxazole precursor of heat resistance, Preferably fragrant family dicarboxylic acids.
As the derivative of the dicarboxylic acids, such as can enumerate：Dicarboxylic acids halide and dicarboxylic acids and hydroxybenzotriazole Deng active ester thing.The derivative of the dicarboxylic acids can be used alone one kind, also can and with two or more.
As the dihydroxy diamine, such as can enumerate：3,3 '-diaminourea -4,4 '-dihydroxybiphenyl, 4,4 '-diamino Base -3,3 '-dihydroxybiphenyl, double (3- amino-4-hydroxylphenyls) propane, double (4- amino-3-hydroxies base) propane, double (3- Amino-4-hydroxylphenyl) methane, double (4- amino-3-hydroxies base) methane, double (3- amino-4-hydroxylphenyls) sulfones, double (4- Amino-3-hydroxy base) sulfone, double (3- amino-4-hydroxylphenyls) HFC-236fas, double (4- amino-3-hydroxies base) hexafluoros third The fragrant family diamines such as alkane, 4,6-diaminoresorcinol, 4,5- diamino resorcins.The dihydroxy diamine can individually make With one kind, also can and with two or more.The good polybenzoxazole precursor of heat resistance can be obtained by using fragrant family diamines.
In polybenzoxazole precursor, the content of the construction unit shown in formula (1) is usually more than 70 mass %, is preferably More than 80 mass %, more preferably more than 90 mass %.The content is for example using proton nmr spectra (Proton Nuclear Magnetic Resonance, 1H NMR) it is measured.
Polybenzoxazole can make polybenzoxazole precursor carry out ring-closure reaction to obtain, for example, before described by heating At least a portion of construction unit represented by formula (1) is transformed to the polymer of the construction unit represented by formula (2) in body.It is poly- Benzoxazole precursor can be the polymerization with a kind of polymer of construction unit, or with two or more construction units Thing.
[changing 2]
X and Y is synonymous with the same-sign in formula (1) in formula (2).It is bonded to that Y N and O are paired, each pair of N and O bond In the adjacent carbon atom on identical aromatic rings, and form benzoxazole ring.
The weight of the polystyrene conversion using gel permeation chromatography (GPC) of polybenzoxazole precursor and polybenzoxazole Amount mean molecule quantity (Mw) is preferably 1,000~1,000,000, more preferably 10, and 000~100,000.Mw is in the scope Polymer easily operated when forming temporarily fixed material layer (I) using composition (I), in addition, as temporary obtained by composition (I) When fix material layer (I) there is sufficient intensity.
In the mass % of solid constituent 100 of temporary transient fixing composition (I), polybenzoxazole precursor and polybenzoxazole close Meter content is usually more than 50 mass %, the matter of preferably 70 mass %~100 mass %, more preferably 90 mass %~100 Measure %.Herein, so-called " solid constituent " refers to all the components beyond solvent.If total content is in the scope, just temporarily When fix for the adherence of material layer (I), the aspect of fissility and heat resistance preferably.
<Other compositions>
Temporary transient fixing composition (I) optionally can also contain assigns tree selected from adhesions such as Petropols and terpenic series resins Fat, antioxidant, polymerization inhibitor, contiguity auxiliary agent, surfactant, polystyrene crosslinked particle and aluminum oxide, oxidation It is more than one or both of metal oxide particles such as zirconium, titanium oxide and silica.
[temporarily fixed material layer (II)]
Temporarily fixed material layer (II) can for example be formed by the temporary transient fixing composition (II) containing light absorber.Composition (II) it is preferably and then contains pyrolytic resin.Composition (II) can also contain solvent.
<Light absorber>
As light absorber, such as can enumerate：Enumerate BTA system light absorber, hydroxyphenyltriazinuv system light absorber, two Benzophenone system light absorber, salicylic acid system light absorber, radioactivity-sensitive radical polymerization initiator and photoinduction acid produce The organic system light absorber such as agent；Phenol novolacs and naphthol novolac varnish etc. have the resin of fused-ring aromatic ring； C.I. the black such as pigment black (C.I.pigment black) 7, C.I. pigment blacks 31, C.I. pigment blacks 32 and C.I. pigment blacks 35 Pigment (such as carbon black)；C.I. alizarol saphirol (C.I.pigment blue) 15：3rd, C.I. pigment blue 15s: 4, C.I. pigment blue 15s： 6th, C.I. naphthol greens (C.I.pigment green) 7, C.I. pigment green 36s, C.I. naphthol greens 58, C.I. pigment yellows (C.I.pigment yellow) 139, C.I. paratoneres (C.I.pigment red) 242, C.I. paratoneres 245 and C.I. face Expect red 254 grade non-black pigment；C.I. vat blue (C.I.vat blue) 4, C.I. acid blues (C.I.acid blue) 40, C.I. direct green (C.I.direct green) 28, C.I. direct greens 59, C.I. Indian yellows (C.I.acid yellow) 11, C.I. direct Huang (C.I.direct yellow) 12, C.I. active yellows (C.I.reactive yellow) 2, C.I. acid reds (C.I.acid red) 37, C.I. acid red 18s 0, C.I. acid blues 29, C.I. directly red (C.I.direct red) 28 and C.I. direct red 83 grade dyestuff.
Furthermore described with the resin of fused-ring aromatic ring, there is also as pyrolytic resin described later Play the resin of function.On such a resin, it can be used as and content described later is calculated equivalent to light absorber person, can also be used as phase When calculating content described later in pyrolytic resin person.
In these, for improving the aspect of separation property of base material, preferably black pigment.In the present invention, as black Pigment, in addition to carbon black monomer, it is possible to use MHI carbon black #201, MHI carbon black #209, MHI carbon black #220, MHI carbon blacks #273 Carbon black dispersions such as (more than, drive state's pigment (stock) manufacture).
Light absorber can be used alone one kind, also can and with two or more.
In the mass % of solid constituent 100 of temporary transient fixing composition (II), the content of light absorber is usually 1 mass % The mass % of~60 mass %, preferably 10 mass %~50 mass %, more preferably 20 mass %~40.Herein, so-called " solid Composition " refers to all the components beyond solvent.If the content of light absorber is in the scope, one is entered with regard to the separation property of base material Step is improved and can prevented for the aspect of the deterioration of the base material caused by the light irradiation preferably.
<Pyrolytic resin>
Temporary transient fixing composition (II) is preferably and then contains pyrolytic resin.Think that pyrolytic resin passes through light Irradiate and decompose or go bad, thus further improve the separation property of base material.
In this manual, so-called " pyrolytic resin " refers to that 5% weight reduces the resin that temperature is less than 300 DEG C. It is preferably 250 DEG C~150 DEG C that 5% weight of pyrolytic resin, which reduces temperature,.5% weight of the resin reduces temperature can profit With thermogravimetry (TGA) in a nitrogen environment, with programming rate, 10 DEG C/min are measured.
As pyrolytic resin, such as can enumerate：Cyclic olefine polymer, acrylic resin, terpenic series resin, stone Oleoresin, novolac resin and elastomer.In these, preferably cyclic olefine polymer, terpenic series resin, Petropols, And elastomer.
As cyclic olefine polymer, such as can enumerate：Cyclic olefin based compound and non-cyclic olefin based compound Addition copolymer, one or more kinds of cyclic olefin based compounds ring-opened metathesis polymers, make the open loop subdivision Polymer obtained by the hydrogenation of depolymerization compound.
As cyclic olefin based compound, such as can enumerate：ENB system alkene, tetracyclododecen system alkene, two rings Pentadiene system alkene and these derivative.As the derivative, such as can enumerate with selected from alkyl, alkylidene, aralkyl In base, cycloalkyl, hydroxyl, alkoxy, acetyl group, cyano group, amide groups, imide, silylation, aromatic rings, ehter bond and ester bond One or more kinds of substitutive derivatives.
As non-cyclic olefin based compound, such as carbon number 2~20, preferably 2~10 straight-chain or branch can be enumerated The alkene of chain, more preferably ethene, propylene, butylene, particularly preferably ethene.
The weight average molecular weight (Mw) that the polystyrene using GPC method of cyclic olefine polymer converts is usually 10, 000~100,000, preferably 30,000~100,000.
As terpenic series resin, such as can enumerate：Terpene resin, hydrogenated terpene resin, terpene phenol resin, hydriding terpene Phenolic resin, aromatic modified terpene resin, aromatic modified hydrogenated terpene resin.
As Petropols, such as can enumerate：C5 through-stones oleoresin, C9 through-stones oleoresin, C5 systems/C9 systems mixing oil tree Fat, cyclopentadiene system resin, the polymer of vinyl aromatic compound, alkene and vinyl aromatic compound Copolymer, cyclopentadiene based compound and vinyl aromatic compound copolymer, these hydride and be selected from Two or more mixtures in these.
As elastomer, such as can enumerate different for the liquid butadiene rubber of liquid condition, liquid under normal temperature (25 DEG C) Pentadiene rubber, liquid styrene butadiene ribber, liquid SIR styrene isoprene rubber equiconjugate dienopolymer rubber.Bullet Property body using GPC method polystyrene convert number average molecular weight (Mn) be usually 1,000~100,000.
Pyrolytic resin can be used alone one kind, also can and with two or more.
It is right containing the layer selected from least one of cyclic olefine polymer, terpenic series resin, Petropols and elastomer The chemical liquids of the high organic solvent of chemical liquids, such as polarity used in photosensitive etching and processing or water system have high patience. Therefore, when being processed base material and/or being mobile, can prevent from causing temporarily to fix material layer (II) deterioration, base because of chemical liquids Material self-supporter deviates mobile unfavorable condition.
In the mass % of solid constituent 100 of temporary transient fixing composition (II), the content of pyrolytic resin is usually 10 The mass % of quality %~95 mass %, preferably 30 mass %~90 mass %, more preferably 50 mass %~80.Herein, institute Meaning " solid constituent " refers to all the components beyond solvent.If the content of the resin is in the scope, just make base material The aspect for the temperature low temperature being temporarily fixed to when on supporter or base material will not self-supporting when being processed to base material and be mobile For the mobile aspect of body deviation preferably.
<Other compositions>
Temporary transient fixing composition (II) optionally can also contain selected from antioxidant, polymerization inhibitor, contiguity auxiliary agent, table In the metal oxide particle such as face activating agent, polystyrene crosslinked particle and aluminum oxide, zirconium oxide, titanium oxide and silica One or more.
<Temporary transient fixing composition (I) and the temporarily manufacture of fixing composition (II)>
Temporary transient fixing composition (I) and temporary transient fixing composition (II) optionally can be by using resin combinations The known device that is used in processing, such as biaxial extruder, single axle extruding machine, continuous kneader, roller kneading machine, pressurization are mediated Machine, banbury mix each composition to manufacture.In addition, in order to go the removal of impurity, also can suitably be filtered.
In temporary transient fixing composition (I) and the temporarily manufacture of fixing composition (II), just by the composition Viscosity is set as the aspect suitable for the scope of coating, it is possible to use solvent.
As the solvent used in temporary transient fixing composition (I), such as can enumerate：Dimethyl sulfoxide (DMSO), diethyl are sub- The sulfoxide solvents such as sulfone；3- methoxyl groups-N, N- dimethylpropionamide, 3- butoxy-N, N- dimethylpropionamide, 3- hexyloxy-N, N- dimethylpropionamides, DMF, N, N- diethylformamides, DMA, N, N- diethyl The amide solvents such as acetamide；METHYLPYRROLIDONE, NVP, N- amyl groups -2-Pyrrolidone, N- The pyrrolidones such as (methoxy-propyl) -2-Pyrrolidone, N- (tert-butyl group) -2-Pyrrolidone, CHP are molten Agent；The ketone solvents such as 2-HEPTANONE, 3- heptanone, 4- heptanone, cyclohexanone；The phosphinylidyne amine solvent such as hexamethyl phosphoramide；And gamma-butyrolacton etc. Interior ester solvent.
As the solvent used in temporary transient fixing composition (II), such as can enumerate：Dimethylbenzene, limonene, equal three Toluene, cinene, firpene, dicyclohexyl, cyclododecene, 1- Tert-butyl-3,5-dimethyl Benzenes, butyl cyclohexane, cyclooctane, ring The hydrocarbon solvents such as heptane, hexamethylene, hexahydrotoluene；Methyl phenyl ethers anisole, propylene glycol monomethyl ether, dipropylene glycol methyl ether, diethylene glycol list second Alcohol/the ether solvents such as ether, diethylene glycol dimethyl ether；Ethylene carbonate, ethyl acetate, butyl acetate, ethyl lactate, 3- ethoxy-propionic acids Ester/the lactone such as ethyl ester, propylene glycol methyl ether acetate, diethylene glycol monoethyl ether acetic acid esters, propylene carbonate, gamma-butyrolacton is molten Agent；The ketone solvents such as cyclopentanone, cyclohexanone, methyl iso-butyl ketone (MIBK), 2-HEPTANONE；The acid amides such as METHYLPYRROLIDONE/lactams is molten Agent.
Solvent can be used alone one kind, also can and with two or more.
Solvent is contained by temporary transient fixing composition (I) and temporary transient fixing composition (II), and is easily adjusted these The viscosity of temporary transient fixing composition, therefore easily temporary transient fixed material is formed on base material or supporter.For example, solvent can be with Temporary transient fixing composition (I) and the temporarily solid component concentration of fixing composition (II) are as usually 5 mass %~70 Quality %, more preferably the mass % of 15 mass %~50 scope use.Herein, so-called " solid component concentration " refer to solvent with Total concentration of outer all the components.
<2. the processing method of base material>
The processing method of the base material of the present invention includes：(1) the step of forming the layered product；(2) base material is carried out Processing, and/or make the step of the layered product movement；(3) to described temporarily fixed material layer (II) irradiation light the step of；(4) certainly The supporter separates the step of base material；And (5) remove described the step of temporarily fixing material layer (I) from the base material.
Hereinafter, each step is also referred to as step (1)~step (5).
<2-1. steps (1)>
In step (1), such as (1-1) forms the temporarily fixed material on the surface of supporter and/or base material, and via The temporarily fixed material makes base material be bonded with supporter, and thus base material can be temporarily fixed on supporter.In addition, (1-2) exists The temporarily fixed material is formed on the surface of supporter, and the base materials such as resin coating film are formed on the temporarily fixed material, thus Base material can be temporarily fixed on supporter.Base material optionally also can surface treated.
As the forming method of the temporarily fixed material, such as can enumerate：It is straight that (α) will temporarily fix each layer possessed by material Connect the method on supporter and/or on base material of being formed at；(β) is implementing polyethylene terephthalate film of demoulding processing etc. On film using temporary transient fixing composition with certain thickness film forming after, using laminar manner by each layer be transferred to supporter and/or Method on base material.It is preferably described (α) method for the aspect of film thickness uniformity.
The temporary transient fixing composition (I) of each layer and temporary transient fixing composition possessed by material are temporarily fixed as being formed (II) coating method, such as spin-coating method, ink-jet method etc. can be enumerated.In spin-coating method, such as it can enumerate and be in rotary speed 300rpm~3,500rpm, it is preferably 500rpm~1,500rpm, acceleration are 500rpm/ seconds second~15,000rpm/, rotation Time is the method for composition described in spin coating under conditions of 30 seconds~300 seconds.
After being coated with temporary transient fixing composition (I) and forming film, such as heated, evaporate solvent, thus shape Into temporary transient fixed material layer (I).The condition of heating for example can suitably determine according to the boiling point of solvent, such as heating-up temperature is usually 100 DEG C~350 DEG C, the heat time is usually 1 minute~60 minutes.
After being coated with temporary transient fixing composition (II) and forming film, such as heated, evaporate solvent, thus shape Into temporary transient fixed material layer (II).The condition of heating for example can suitably determine according to the boiling point of solvent, such as heating-up temperature is usual For 100 DEG C~300 DEG C, the heat time is usually 1 minute~60 minutes.
The heating of the film can optionally be carried out with the multistage.
In (α) method, as the method for making base material be bonded with supporter, such as it can enumerate：Method 1, in base material Forming layer (I) and forming layer (II) in intermediate layer on face, these are made to be bonded in a manner of layer (I) and layer (II) contact；Side Method 2, layer (I) and layer (II) are sequentially formed on substrate surface and is bonded supporter on layer (II)；Method 3, in intermediate layer Sequentially form layer (II) and layer (I) and be bonded base material on layer (I).Temperature now can be according to temporary transient fixing composition (I) And temporarily fixing composition (II) suitably selects containing composition, coating method etc..In these, it is avoided that the formation of each layer For the viewpoint of middle level (I) and layer (II) mixing, preferably methods described 1.
Crimp condition on base material and supporter, as long as such as by be preferably more than room temperature and less than 400 DEG C, more Preferably 150 DEG C~400 DEG C of temperature applied 0.01MPa~100MPa with 1 minute~20 minutes on the stacked direction of each layer Pressure carry out.After crimping, and then temperature that can also be 150 DEG C~300 DEG C is carried out at heating in 10 minutes~3 hours Reason.In this way, base material is firmly held on supporter via temporary transient fixed material.
Temporarily in fixed material layer (I), total content of polybenzoxazole precursor and polybenzoxazole is usually 50 mass % More than, the mass % of preferably 70 mass %~100 mass %, more preferably 90 mass %~100.If content is in the model Enclose, then with regard to for the aspect of the adherence of temporary transient fixed material layer (I), fissility and heat resistance preferably.
Temporarily in fixed material layer (II), the content of light absorber is usually the mass % of 1 mass %~60, preferably 10 matter Measure the mass % of %~50 mass %, more preferably 20 mass %~40.If the content of light absorber is in the scope, with regard to base For the viewpoint of the fissility of material preferably.Temporarily in fixed material layer (II), the content of pyrolytic resin is usually 10 mass % The mass % of~95 mass %, preferably 30 mass %~90 mass %, more preferably 50 mass %~80.
The base material as processing (movement) object can for example be enumerated：Semiconductor crystal wafer, glass substrate, resin base Plate, metal substrate, metal foil, grinding pad, resin coating film.Also projection, distribution and dielectric film etc. can be formed on a semiconductor wafer. As resin coating film, such as the layer for containing organic principle as principal component can be enumerated；It can specifically enumerate：By photosensitive material The photo-sensitive resin of formation, the insulative resin layer that is formed by Ins. ulative material, formed by photosensitive insulating resin material Photosensitive insulating resin layer etc..
As supporter, make temporarily to fix material layer (II) and go bad carrying out light irradiation using step (3) self-supporting side In the case of, preferably for the transparent substrate of the light used in light irradiation, such as glass substrate and quartz base plate can be enumerated.
When at forming layer on base material (I), in order that the extension temporarily in the face of fixed material is uniform, also can be to substrate surface (such as circuit face) implements surface treatment in advance.As the method for surface treatment, such as it can enumerate and be pre-coated with substrate surface The method of surface conditioning agent.As the surface conditioning agent, such as the coupling agents such as silane coupling agent can be enumerated.
<2-2. steps (2)>
Step (2) is that the layered product that gained is processed, and/or made to the base material being temporarily fixed on supporter moves Step.Moving step is the step for making the base materials such as semiconductor crystal wafer together be moved with supporter from certain device to other devices.Make For the working process for the base material being temporarily fixed on supporter, such as can enumerate：The filming of the base materials such as cutting, grinding back surface, Photosensitive etching and processing.Photosensitive etching and processing for example comprising the formation selected from Resist patterns, etching and processing, sputter coating formation, Plating processing and plating reflow processing one or more of processing.The formation of etching and processing and sputter coating be, for example, 25 DEG C~ Carried out within the temperature range of 300 DEG C or so, plating processing and plating reflow processing are e.g. in 225 DEG C~300 DEG C or so of temperature Carried out in the range of degree.As long as the working process of base material is carried out at a temperature of the confining force of temporary transient fixed material will not disappear, then It is not particularly limited.
<2-3. steps (3)>
After the working process of base material or the movement of layered product, to temporarily fixing material layer (II) possessed by temporary transient fixed material Such as self-supporting side irradiation light.By light irradiation, the light absorber containing composition as temporary transient fixed material layer (II) absorbs The adhesion reduction of light, temporarily fixed material layer (II).Therefore, as long as after the light irradiation for temporary transient fixed material layer (II), then Do not need especially the heating of temporarily fixed material can easily self-supporter separation substrate.
Light irradiation is preferably to use ultraviolet, such as can use wavelength 10nm~400nm ultraviolet, particularly preferably ripple Long 300nm~400nm ultraviolet.As the light source of irradiation light, such as can enumerate：Cooper-Hewitt lamp, high-pressure mercury-vapor lamp, superelevation Medium pressure mercury lamp, laser.
In these, preferably laser.Preferably self-supporting side one side scanning laser one is in face of temporarily fixed material layer (II) Whole face be irradiated, focus is concentrated on temporarily fixed material layer (II) and is irradiated laser.Scan method has no spy Do not limit, such as can enumerate：In the X/Y plane of temporary transient fixed material layer (II), laser is irradiated with wire in the X-axis direction, in Y The method for making irradiation portion move successively on direction of principal axis and being irradiated to whole face；Or with angle week shape irradiation laser, make irradiation portion certainly Central part be moved to successively to peripheral part outside or make irradiation portion be moved to successively from peripheral part to central part inner side and to whole face The method being irradiated.
Laser can for example enumerate Solid State Laser (example：Use the total solids laser of photo-excited semiconductor laser, YAG laser), Liquid laser (example：Pigment laser), gas laser (example：PRK).In these, it is preferable to use photo-excited semiconductor swashs Total solids laser (the wavelength of light：355nm), YAG laser (wavelength：355nm) and PRK.
As PRK, such as can enumerate：F2PRK (wavelength：157mm), ArF PRKs (ripple It is long：193nm), KrF PRKs (wavelength：248nm), XeCl PRKs (wavelength：308nm), XeF PRKs (wavelength：351nm).
The condition of light irradiation regards the species of light source etc. and different, use photo-excited semiconductor laser total solids laser and In the case of YAG laser, usually 1mW~100W, integration light quantity is usually 1.4 × 10-7mJ/cm2~1.4 × 107mJ/cm2。
<2-4. steps (4)>
After the working process of base material or mobile processing, to base material or supporter applying power, thus shelled from the supporter From described base material etc., separate both.Such as it can enumerate：Base material or supporter are applied on the direction parallel relative to substrate surface The method for reinforcing and separating both；One of base material or supporter is fixed, and from relative to the parallel direction of substrate surface with Certain angle starts another one, the method for thus separating both.
In the former method, method can be listed below：Base material is set to slide in the horizontal direction on the surface relative to supporter While dynamic, apply the power to be contended with fixed support body or application to the power of the base material to supporter, thus self-supporter Separation substrate.
In the method for the latter, the applying power preferably on relative to substrate surface generally perpendicular direction and self-supporter separate Base material.It is so-called to refer to " relative to substrate surface generally perpendicular direction applying power " relative to the axle perpendicular to substrate surface i.e. z-axis, Scope at usually 0 °~60 °, it is preferably 0 °~45 ° of scope, more preferably 0 °~30 ° of scope and then preferably 0 ° ~5 ° of scope, particularly preferably 0 °, the i.e. applying power on the direction of substrate surface.As separate mode, such as can incite somebody to action The periphery of base material or supporter starts (part or all from temporarily fixed material by the periphery is peeled off) and relative to base Applying power in face generally perpendicular direction, and the method peeled off successively from the periphery of base material or supporter to center (hook drawing mode) is carried out.
The separation can be usually 5 DEG C~100 DEG C, be preferably 10 DEG C~45 DEG C and then preferably 15 DEG C~30 DEG C Temperature is carried out.Temperature herein refers to the temperature of supporter.In addition, when being separated, in order to prevent the breakage of base material, also may be used The face of side in the substrate and opposite with the temporary transient set face of supporter attaches enhancing band, for example commercially available cutting belt.
In the present invention, as described above, temporarily fixed material has layer (I) and layer (II), base material is protected by layer (I), and mainly Separation is produced in layer (II), therefore in the case where base material has projection, the breakage of projection can be prevented in separating step.
<2-5. steps (5)>
Step (5) is to remove described the step of temporarily fixing material layer (I) from base material.Temporary transient fixed material layer (I) be by containing In the case that the temporary transient fixing composition (I) for having polybenzoxazole precursor is formed, it is believed that for example utilize step (1)~step (2) precursor applied in becomes the polybenzoxazole for turning to excellent heat resistance.Therefore, can suppress because to temporarily fixed The temporarily deterioration of fixed material layer (I) caused by heat caused by the light irradiation of material layer (II) and part.Therefore, using peel off and it is molten The simple method such as agent cleaning removes the layer (I) residued in after the separating treatment of base material on base material.
As lift-off processing, such as it can enumerate and be peeled off temporarily admittedly from base material on relative to substrate surface generally perpendicular direction Determine material layer (I) method, can specifically enumerate the applying power on relative to substrate surface generally perpendicular direction, and from base material Periphery peel off the method (hook drawing mode) of temporarily fixed material layer (I) successively to center.The implication of generally vertical direction such as step It is illustrated such in (4) one columns.
As the cleaning treatment using solvent, such as the method being impregnated in base material in solvent can be enumerated, base material is sprayed The method of solvent, the method for applying when base material is impregnated in solvent ultrasonic wave.The temperature of solvent is not particularly limited, Preferably 10 DEG C~80 DEG C, more preferably 20 DEG C~50 DEG C.As solvent, temporary transient fixing composition (I) and temporarily can be illustrated Illustrated solvent in the column of manufacture one of fixing composition (II).
In these, so that it may for the damaged aspect for preventing projection, preferably lift-off processing.
As described above, can self-supporter separation substrate.
3. semiconductor device
The semiconductor device of the present invention can be processed by using the processing method of the base material of the present invention and make to base material Make.Semiconductor device (example obtained by processing base material is separated in self-supporter：Semiconductor element) after, the temporarily fixed material is in institute It is easily moved away when stating step (5), therefore in the semiconductor device, temporarily fixes the pollution (example of material：Stain, focal spot) Strongly reduced.
[embodiment]
Hereinafter, it is specifically described based on embodiment and then to the present invention, but the present invention is not limited to these embodiments. In the record of following embodiment etc., as long as not specifically mentioned, then " part " is the implication use with " mass parts ".
The mean molecule quantity of polymer and resin (Mw, Mn) is the GPC tubing strings (2 manufactured using eastern Cao (stock) G2000HXL, 1 G3000HXL, 1 G4000HXL) and in terms of polystyrene conversion and use measure device " HLC-8220- GPC " (eastern Cao's (share) manufacture) is measured.
1. the manufacture of temporary transient fixing composition
The manufacture of [Production Example 1] temporary transient fixing composition (I-1)
50 parts of double (3- amino-4-hydroxylphenyls) HFC-236fas of 2,2- and N- first are added in the flask that capacity is 0.3L 270 parts of base -2-Pyrrolidone, is subject to stirring and dissolving.Then, temperature is simultaneously remained 0 DEG C~10 DEG C, simultaneously lasts 30 minutes Dropwise addition makes 4, and 50 parts of 4 '-epoxide double (chlorobenzoyl chlorides) is dissolved in the solution formed in 230 parts of METHYLPYRROLIDONE, then Continue stirring 60 minutes.Solution after stirring is put into pure water, reclaim precipitate, and by its with pure water clean 3 times after, enter Row vacuum drying, obtains polybenzoxazole precursor (A1).The weight average molecular weight of precursor (A1) is 48,600.Make precursor (A1) It is dissolved in gamma-butyrolacton/METHYLPYRROLIDONE=8/2 (mass ratio), with solid component concentration as 30 mass %'s Prepared by mode, manufacture temporary transient fixing composition (I-1).
The manufacture of [Production Example 2] temporary transient fixing composition (I-2)
50 parts of double (3- amino-4-hydroxylphenyls) HFC-236fas of 2,2- and N- first are added in the flask that capacity is 0.3L 400 parts of base -2-Pyrrolidone, is subject to stirring and dissolving.Then, temperature is simultaneously remained 0 DEG C~10 DEG C, simultaneously lasts 30 minutes 50 parts of succinyl dichloro is added dropwise, then proceedes to stirring 60 minutes.Solution after stirring is put into pure water, reclaims precipitate, And after it is cleaned 3 times with pure water, be dried in vacuo, obtain polybenzoxazole precursor (A2).The weight average of precursor (A2) Molecular weight is 58,500.Precursor (A2) is set to be dissolved in gamma-butyrolacton/METHYLPYRROLIDONE=8/2 (mass ratio), with Solid component concentration is prepared as 30 mass % mode, manufactures temporary transient fixing composition (I-2).
The manufacture of [Production Example 3] temporary transient fixing composition (I-3)
50 parts of double (3- amino-4-hydroxylphenyls) isopropylidenes of 2,2- and N- first are added in the flask that capacity is 0.3L 270 parts of base -2-Pyrrolidone, is subject to stirring and dissolving.Then, temperature is simultaneously remained 0 DEG C~10 DEG C, simultaneously lasts 30 minutes Dropwise addition makes 4, and 50 parts of 4 '-epoxide double (chlorobenzoyl chlorides) is dissolved in the solution formed in 230 parts of METHYLPYRROLIDONE, then Continue stirring 60 minutes.Solution after stirring is put into pure water, reclaim precipitate, and by its with pure water clean 3 times after, enter Row vacuum drying, obtains polybenzoxazole precursor (A3).The weight average molecular weight of precursor (A3) is 26,300.Make precursor (A3) It is dissolved in gamma-butyrolacton/METHYLPYRROLIDONE=8/2 (mass ratio), with solid component concentration as 30 mass %'s Prepared by mode, manufacture temporary transient fixing composition (I-3).
The manufacture of [Production Example 4] temporary transient fixing composition (I-4)
2,2- double 50 parts of (3- amino-4-hydroxylphenyls) HFC-236fa, Isosorbide-5-Nitraes-ring are added in the flask that capacity is 0.3L 500 parts of 50 parts of hexane dicarboxylic acid's (cis-trans- mixture) and polyphosphoric acid, are subject to stirring and dissolving.Then, in nitrogen environment It is lower that temperature is warming up to 200 DEG C, continue stirring 30 minutes.Solution after stirring is put into pure water, reclaims precipitate, and will After it is cleaned 3 times with pure water, it is dried in vacuo, obtains polybenzoxazole precursor (A4).The weight averaged molecular of precursor (A4) Measure as 41,000.Precursor (A4) is dissolved in cyclohexanone, prepared in a manner of solid component concentration turns into 30 mass %, Manufacture temporary transient fixing composition (I-4).
The manufacture of [Production Example 5] temporary transient fixing composition (I-5)
P- 70 parts of t-butoxystyrene, 10 parts of styrene is set to be dissolved in 150 parts of propylene glycol monomethyl ether, in nitrogen ring Under border, reaction temperature is remained 70 DEG C, 4 parts polymerize within 10 hours using azobis isobutyronitrile.Thereafter, after polymerisation molten Sulfuric acid is added in liquid, reaction temperature is remained 90 DEG C and react within 10 hours, makes p- t-butoxystyrene construction unit It is deprotected and is transformed to p- hydroxy styrenes construction unit.Ethyl acetate is added in solution after the conversion, carries out 5 washings, Ethyl acetate is removed, obtains p- hydroxy styrenes/styrol copolymer (A5).The weight average molecular weight of copolymer (A5) (Mw) it is 10,000.In addition, according to NMR, copolymer (A5) is with the p- hydroxystyrene units of 80 moles of %, 20 moles of % The polymer of styrene units.Copolymer (A5) is set to be dissolved in ethyl lactate, with solid component concentration as 30 mass %'s Prepared by mode, manufacture temporary transient fixing composition (I-5).
The manufacture of [Production Example 6] temporary transient fixing composition (I-6)
In the flask through nitrogen displacement, 2 as polymerization initiator, 2 '-azobis isobutyronitrile 5.0g and conduct are put into It polymerize the propylene glycol methyl ether acetate 150g of solvent, is stirred.Put into solution after agitation methacrylic acid 11g, P- isopropenyl phenol 15g, three ring [5.2.1.02,6] decane methyl acrylate 15g, iso-bornyl acrylate 39g, And phenoxy group polyethylene glycol acrylate 20g, start to stir and be warming up to 80 DEG C.Thereafter, heated 6 hours at 80 DEG C.It will add Solution after thermojunction beam is added dropwise in substantial amounts of hexamethylene and makes its solidification.The coagulum is washed, makes the solidification Thing be re-dissolved in coagulum for identical weight tetrahydrofuran in, then the solution of gained is added dropwise in substantial amounts of hexamethylene And it is set to solidify again.The redissolution and solidification operation are added up to after carrying out 3 times, to the coagulum vacuum of gained at 40 DEG C Dry 48 hours, obtain copolymer (A6).The weight average molecular weight (Mw) of copolymer (A6) is 10,000.Make copolymer (A6) It is dissolved in propylene glycol methyl ether acetate, is prepared in a manner of solid component concentration turns into 30 mass %, manufacture is temporary transient Fixing composition (I-6).
The manufacture of [Production Example 7] temporary transient fixing composition (II-1)
By 80 parts of cyclic olefine polymer (trade name " ARTON RX4500 ", JSR (stock) manufacture), 20 parts of hydrogenation terpene Olefine resin (trade name " CLEARON P150 ", peace former chemical (stock) manufacture), 20 parts of liquid styrene butadiene ribber (commodity Name " L-SBR-820 ", Kuraray (stock) manufacture), 3 parts of hindered phenol series antioxidant (trade name " IRGANOX1010 ", BASF Company manufactures), 125 parts of carbon black dispersion (trade name " MHI carbon blacks #209 ", imperial state's pigment (stock) manufacture, solid constituent 35 Quality %) and 367 parts mesitylene mixing, thus manufacture temporary transient fixing composition (II-1).
2. evaluation
[1~embodiment of embodiment 4,1~comparative example of comparative example 4]
The temporary transient fixing composition of spin coating (I-1)~temporary transient fixing composition on 4 inches of Silicon Wafers (substrate 1) (I-6), thereafter, heated using heating plate under the membrance casting condition described in table 1, it is 10 μm uniform to obtain with thickness Temporary transient fixed material layer (I) substrate 1.In addition, the temporary transient fixing composition of spin coating on 4 inches of glass wafer (substrate 2) (II-1) after, thereafter, being heated 5 minutes at 160 DEG C using heating plate, and then heated 10 minutes at 230 DEG C, making has thickness Spend the substrate 2 of the uniform temporarily fixed material layer (II) for 3 μm.
After the substrate 1 and the substrate 2 are cut into vertical 1cm, horizontal 1cm respectively, with temporarily fixed material layer (I) and temporarily The mode of fixed material layer (II) contact is bonded, and using chip bonding device, applies 5 points at a temperature of the crimping shown in table 1 Clock 15MPa pressure, obtain the layered product that substrate 1 forms with substrate 2 via temporary transient fixed material layer stackup.
Utilize total solids height output laser aid (trade name " Genesis CX 355STM Compact ", the day black human relations of undergraduate course Special (stock) manufacture) to export 100mW, integrate light quantity 2.08 × 10-4 mJ/cm2The layered product of gained is irradiated from the side of substrate 2 purple Outside line UV laser (wavelength 355nm).From the experiment after light irradiation substrate 2 is removed with layered product.Then, to substrate 1 can be peeled off On temporary transient fixed material layer (I), the preparation when institute for forming temporarily each temporarily fixed material composition of fixed material layer (I) can be utilized Temporarily fixed material layer (I) is evaluated for the solvent cleaning used.Evaluation result is shown in table 1.
In layer (I) lift-off processing, using omnipotent adhesion strength test machine, (trade name is " up to lattice 4000 ", Dagua Inc. Manufacture) in a manner of hook is drawn relative to vertical axle (z-axis) direction applying power in the face of substrate 1 speed of 500 μm/second (, 23 DEG C), enter The stripping of row layer (I).
In the cleaning treatment of layer (I), each temporarily fixing composition (I-1) of temporarily fixed material layer (I)~temporarily is being formed When fixing composition (I-6) preparation in the homogeneous solvent that uses, at 23 DEG C, the layered product after substrate 2 will be removed and soaked Stain 20 minutes.For example, the layered product after removal substrate 2 is impregnated in gamma-butyrolacton/N- methyl -2- in the case of example 1 In pyrrolidones=8/2 (mass ratio), in the case of comparative example 1, the layered product after removal substrate 2 is impregnated in ethyl lactate In.
[table 1]
The explanation of symbol
1：Layered product
10：Supporter
20：Temporarily fixed material
21：Temporarily fixed material layer (I)
22：Temporarily fixed material layer (II)
30：Base material

Claims (8)

1. a kind of processing method of base material, it includes successively：
(1) the step of forming layered product, the layered product have supporter, temporarily fixed material and base material,
Temporarily fixed material described herein for contacted with the face with the support side in the base material and by containing selected from polyphenyl simultaneously Temporary transient fixed material layer (I) that the composition of at least one of oxazole precursor and polybenzoxazole polymer is formed and
Material layer is temporarily fixed on the face on the support side being formed in the temporarily fixed material layer (I) and containing light absorber (II)；
(2) base material is processed, and/or makes the step of the layered product movement；
(3) to described temporarily fixed material layer (II) irradiation light the step of；
(4) the step of separating the base material from the supporter；And
(5) the step of removing temporarily fixed material layer (I) from the base material.
2. the processing method of base material according to claim 1, wherein the composition contains polybenzoxazole precursor.
3. the processing method of base material according to claim 1 or 2, wherein described temporarily fix material layer (II) and then containing heat Decomposability resin.
4. the processing method of base material according to any one of claim 1 to 3, wherein in the step (3), to described Temporarily the light of fixed material layer (II) irradiation is ultraviolet.
5. the processing method of base material according to claim 4, wherein the ultraviolet is wavelength 300nm~400nm purple Outside line.
6. the processing method of base material according to any one of claim 1 to 5, wherein in the step (5), by certainly The base material is peeled off the processing of the temporarily fixed material layer (I) and/or the temporarily fixed material layer (I) carried out using solvent clear The processing washed and remove the temporarily fixed material layer (I) from the base material.
7. a kind of semiconductor device, its be the processing method using base material according to any one of claim 1 to 6 and .
8. a kind of temporary transient fixing composition, it contains poly- selected from least one of polybenzoxazole precursor and polybenzoxazole Compound.
CN201680041470.XA 2015-08-21 2016-07-22 Substrate processing method and semiconductor device Active CN107851551B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021217802A1 (en) * 2020-04-27 2021-11-04 武汉华星光电半导体显示技术有限公司 Flexible display panel and manufacturing method therefor
CN115551962A (en) * 2020-05-21 2022-12-30 电化株式会社 Composition comprising a fatty acid ester and a fatty acid ester

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023243488A1 (en) * 2022-06-13 2023-12-21 日東電工株式会社 Adhesive sheet for provisional fixation of electronic component
WO2023243487A1 (en) * 2022-06-13 2023-12-21 日東電工株式会社 Adhesive sheet for provisional fixation of electronic component

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1885500A (en) * 2005-06-24 2006-12-27 精工爱普生株式会社 Manufacturing method for a semiconductor device
CN101030526A (en) * 2006-03-03 2007-09-05 株式会社半导体能源研究所 Method of manufacyuring semiconductor device
CN102625952A (en) * 2009-09-16 2012-08-01 住友电木株式会社 Film for forming spacer, method for manufacturing semiconductor wafer bonded body, semiconductor wafer bonded body, and semiconductor device
WO2015030030A1 (en) * 2013-08-30 2015-03-05 富士フイルム株式会社 Laminate and application therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3178417B2 (en) * 1998-06-10 2001-06-18 日本電気株式会社 Semiconductor carrier and method of manufacturing the same
DE10137375A1 (en) * 2001-07-31 2003-02-27 Infineon Technologies Ag Use of polybenzoxazole polymers for adhesive bonding, especially for bonding chips and-or wafers, e.g. silicon wafers with titanium nitride-coated silicon chips
CN1703773B (en) * 2002-06-03 2011-11-16 3M创新有限公司 Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
KR101383540B1 (en) 2007-01-03 2014-04-09 삼성전자주식회사 Method of estimating motion vector using multiple motion vector predictors, apparatus, encoder, decoder and decoding method
JP2011066167A (en) * 2009-09-16 2011-03-31 Sumitomo Bakelite Co Ltd Film for forming spacer, method for manufacturing semiconductor wafer bonded body, semiconductor wafer bonded body, and semiconductor device
JP2013098305A (en) * 2011-10-31 2013-05-20 Jsr Corp Processing method of substrate, semiconductor device and composition for temporarily fixing
US20140103499A1 (en) * 2012-10-11 2014-04-17 International Business Machines Corporation Advanced handler wafer bonding and debonding
WO2014137801A1 (en) * 2013-03-03 2014-09-12 John Moore Temporary adhesive with tunable adhesion force sufficient for processing thin solid materials

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1885500A (en) * 2005-06-24 2006-12-27 精工爱普生株式会社 Manufacturing method for a semiconductor device
CN101030526A (en) * 2006-03-03 2007-09-05 株式会社半导体能源研究所 Method of manufacyuring semiconductor device
CN102625952A (en) * 2009-09-16 2012-08-01 住友电木株式会社 Film for forming spacer, method for manufacturing semiconductor wafer bonded body, semiconductor wafer bonded body, and semiconductor device
WO2015030030A1 (en) * 2013-08-30 2015-03-05 富士フイルム株式会社 Laminate and application therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021217802A1 (en) * 2020-04-27 2021-11-04 武汉华星光电半导体显示技术有限公司 Flexible display panel and manufacturing method therefor
US11793013B2 (en) 2020-04-27 2023-10-17 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Flexible display panel and fabricating method thereof
CN115551962A (en) * 2020-05-21 2022-12-30 电化株式会社 Composition comprising a fatty acid ester and a fatty acid ester

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