CN107851547B - 用于气体消除的方法及装置 - Google Patents

用于气体消除的方法及装置 Download PDF

Info

Publication number
CN107851547B
CN107851547B CN201680043524.6A CN201680043524A CN107851547B CN 107851547 B CN107851547 B CN 107851547B CN 201680043524 A CN201680043524 A CN 201680043524A CN 107851547 B CN107851547 B CN 107851547B
Authority
CN
China
Prior art keywords
turns
coil antenna
plasma
dielectric tube
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680043524.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN107851547A (zh
Inventor
王荣平
曾继兵
大卫·姆曲英·胡
迈克尔·S·考克斯
原铮
杰姆斯·L·厄鲁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN107851547A publication Critical patent/CN107851547A/zh
Application granted granted Critical
Publication of CN107851547B publication Critical patent/CN107851547B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4414—Electrochemical vapour deposition [EVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
    • H05H1/2465—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube the plasma being activated by inductive coupling, e.g. using coiled electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/30—Medical applications
    • H05H2245/36—Sterilisation of objects, liquids, volumes or surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Electrochemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201680043524.6A 2015-07-24 2016-05-12 用于气体消除的方法及装置 Active CN107851547B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562196549P 2015-07-24 2015-07-24
US62/196,549 2015-07-24
US15/147,974 US10187966B2 (en) 2015-07-24 2016-05-06 Method and apparatus for gas abatement
US15/147,974 2016-05-06
PCT/US2016/032091 WO2017019149A1 (en) 2015-07-24 2016-05-12 Method and apparatus for gas abatement

Publications (2)

Publication Number Publication Date
CN107851547A CN107851547A (zh) 2018-03-27
CN107851547B true CN107851547B (zh) 2020-11-27

Family

ID=57837928

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680043524.6A Active CN107851547B (zh) 2015-07-24 2016-05-12 用于气体消除的方法及装置

Country Status (7)

Country Link
US (2) US10187966B2 (https=)
EP (1) EP3326193B1 (https=)
JP (1) JP6671472B2 (https=)
KR (1) KR102551216B1 (https=)
CN (1) CN107851547B (https=)
TW (1) TWI675415B (https=)
WO (1) WO2017019149A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10187966B2 (en) * 2015-07-24 2019-01-22 Applied Materials, Inc. Method and apparatus for gas abatement
US10535506B2 (en) 2016-01-13 2020-01-14 Mks Instruments, Inc. Method and apparatus for deposition cleaning in a pumping line
KR102210393B1 (ko) 2017-02-09 2021-02-01 어플라이드 머티어리얼스, 인코포레이티드 수증기 및 산소 시약을 이용하는 플라즈마 저감 기술
JP7042142B2 (ja) * 2018-03-30 2022-03-25 株式会社ダイヘン プラズマ発生装置
JP7042143B2 (ja) * 2018-03-30 2022-03-25 株式会社ダイヘン プラズマ発生装置
US11221182B2 (en) 2018-07-31 2022-01-11 Applied Materials, Inc. Apparatus with multistaged cooling
US11306971B2 (en) 2018-12-13 2022-04-19 Applied Materials, Inc. Heat exchanger with multistaged cooling
WO2020172179A1 (en) * 2019-02-22 2020-08-27 Applied Materials, Inc. Reduction of br2 and cl2 in semiconductor processes
US20200286712A1 (en) * 2019-03-05 2020-09-10 Advanced Energy Industries, Inc. Single-turn and laminated-wall inductively coupled plasma sources
JP7489171B2 (ja) * 2019-03-26 2024-05-23 株式会社ダイヘン プラズマ発生装置
US11745229B2 (en) 2020-08-11 2023-09-05 Mks Instruments, Inc. Endpoint detection of deposition cleaning in a pumping line and a processing chamber
US12065359B2 (en) 2021-04-14 2024-08-20 Applied Materials, Inc. Portable fluorine generator for on-site calibration
US11664197B2 (en) 2021-08-02 2023-05-30 Mks Instruments, Inc. Method and apparatus for plasma generation
JP7756033B2 (ja) * 2022-03-23 2025-10-17 株式会社ダイヘン プラズマ発生器
US12159765B2 (en) 2022-09-02 2024-12-03 Mks Instruments, Inc. Method and apparatus for plasma generation
CN116161802B (zh) * 2023-03-24 2025-06-03 瑞纳智能设备股份有限公司 水处理装置和水处理系统
US12573594B2 (en) 2023-12-19 2026-03-10 Applied Materials, Inc. Protective liner for plasma source

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0696967A (ja) * 1992-09-14 1994-04-08 Ulvac Japan Ltd プロセス装置用高周波電源の整合装置
CN1582485A (zh) * 2001-09-14 2005-02-16 拉姆研究有限公司 等离子体处理器线圈
CN101390187A (zh) * 2006-01-24 2009-03-18 瓦里安半导体设备公司 具有低有效天线电压的等离子体浸润离子源
JP2013093265A (ja) * 2011-10-27 2013-05-16 Panasonic Corp プラズマ処理装置及び方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
US6187072B1 (en) * 1995-09-25 2001-02-13 Applied Materials, Inc. Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
US6193802B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6315872B1 (en) * 1997-11-26 2001-11-13 Applied Materials, Inc. Coil for sputter deposition
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
US6291938B1 (en) 1999-12-31 2001-09-18 Litmas, Inc. Methods and apparatus for igniting and sustaining inductively coupled plasma
US6367412B1 (en) 2000-02-17 2002-04-09 Applied Materials, Inc. Porous ceramic liner for a plasma source
KR100513163B1 (ko) * 2003-06-18 2005-09-08 삼성전자주식회사 Ｉｃｐ 안테나 및 이를 사용하는 플라즈마 발생장치
FR2864795B1 (fr) * 2004-01-06 2008-04-18 Air Liquide Procede de traitement des gaz par des decharges hautes frequence
US20050194099A1 (en) 2004-03-03 2005-09-08 Jewett Russell F.Jr. Inductively coupled plasma source using induced eddy currents
US20060081185A1 (en) * 2004-10-15 2006-04-20 Justin Mauck Thermal management of dielectric components in a plasma discharge device
US20060211253A1 (en) * 2005-03-16 2006-09-21 Ing-Shin Chen Method and apparatus for monitoring plasma conditions in an etching plasma processing facility
JP2006286536A (ja) * 2005-04-04 2006-10-19 Ebara Corp プラズマ生成方法、誘導結合型プラズマ源、およびプラズマ処理装置
KR100774521B1 (ko) * 2005-07-19 2007-11-08 주식회사 디엠에스 다중 안테나 코일군이 구비된 유도결합 플라즈마 반응장치
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
US8932430B2 (en) * 2011-05-06 2015-01-13 Axcelis Technologies, Inc. RF coupled plasma abatement system comprising an integrated power oscillator
US20080236491A1 (en) 2007-03-30 2008-10-02 Tokyo Electron Limited Multiflow integrated icp source
JP4950763B2 (ja) * 2007-05-25 2012-06-13 大陽日酸株式会社 プラズマ生成装置
KR100926706B1 (ko) * 2008-02-21 2009-11-17 (주)플러스텍 반구형 나선 안테나를 구비한 반도체용 플라즈마 가공장치
US8736177B2 (en) 2010-09-30 2014-05-27 Fei Company Compact RF antenna for an inductively coupled plasma ion source
KR101196309B1 (ko) * 2011-05-19 2012-11-06 한국과학기술원 플라즈마 발생 장치
US20130146225A1 (en) * 2011-12-08 2013-06-13 Mks Instruments, Inc. Gas injector apparatus for plasma applicator
US9867238B2 (en) * 2012-04-26 2018-01-09 Applied Materials, Inc. Apparatus for treating an exhaust gas in a foreline
KR20140087215A (ko) * 2012-12-28 2014-07-09 주식회사 윈텔 플라즈마 장치 및 기판 처리 장치
US9247629B2 (en) 2013-03-15 2016-01-26 Agilent Technologies, Inc. Waveguide-based apparatus for exciting and sustaining a plasma
CN105340059B (zh) * 2013-06-17 2019-03-22 应用材料公司 用于等离子体反应器的增强等离子体源
US11158526B2 (en) * 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
JP2017517380A (ja) * 2014-03-06 2017-06-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 重原子を含有する化合物のプラズマ軽減
US9240308B2 (en) * 2014-03-06 2016-01-19 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system
US9230780B2 (en) * 2014-03-06 2016-01-05 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source
US20150279626A1 (en) * 2014-03-27 2015-10-01 Mks Instruments, Inc. Microwave plasma applicator with improved power uniformity
US9653266B2 (en) * 2014-03-27 2017-05-16 Mks Instruments, Inc. Microwave plasma applicator with improved power uniformity
US9378928B2 (en) * 2014-05-29 2016-06-28 Applied Materials, Inc. Apparatus for treating a gas in a conduit
US10187966B2 (en) * 2015-07-24 2019-01-22 Applied Materials, Inc. Method and apparatus for gas abatement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0696967A (ja) * 1992-09-14 1994-04-08 Ulvac Japan Ltd プロセス装置用高周波電源の整合装置
CN1582485A (zh) * 2001-09-14 2005-02-16 拉姆研究有限公司 等离子体处理器线圈
CN101390187A (zh) * 2006-01-24 2009-03-18 瓦里安半导体设备公司 具有低有效天线电压的等离子体浸润离子源
JP2013093265A (ja) * 2011-10-27 2013-05-16 Panasonic Corp プラズマ処理装置及び方法

Also Published As

Publication number Publication date
JP6671472B2 (ja) 2020-03-25
US20170027049A1 (en) 2017-01-26
KR102551216B1 (ko) 2023-07-03
CN107851547A (zh) 2018-03-27
US10757797B2 (en) 2020-08-25
TWI675415B (zh) 2019-10-21
TW201705274A (zh) 2017-02-01
EP3326193B1 (en) 2023-01-11
US20190246481A1 (en) 2019-08-08
EP3326193A1 (en) 2018-05-30
EP3326193A4 (en) 2019-04-10
WO2017019149A1 (en) 2017-02-02
JP2018530893A (ja) 2018-10-18
KR20180025963A (ko) 2018-03-09
US10187966B2 (en) 2019-01-22

Similar Documents

Publication Publication Date Title
CN107851547B (zh) 用于气体消除的方法及装置
KR102104243B1 (ko) 포어라인에서 배기 가스를 처리하기 위한 장치
US6239553B1 (en) RF plasma source for material processing
KR101805612B1 (ko) 도관 내의 가스를 처리하기 위한 장치
JP6177864B2 (ja) チャネルに沿って断面積が変化するトーラス状のプラズマチャネル
KR101594636B1 (ko) 고주파 안테나 유닛 및 플라즈마 처리장치
KR20090094290A (ko) 플라즈마 발생 장치
TW200911040A (en) Plasma processing system, antenna, and use plasma processing system
KR100803794B1 (ko) 마그네틱 코어 블록에 매설된 플라즈마 방전 튜브를 구비한유도 결합 플라즈마 소스
KR100805557B1 (ko) 다중 마그네틱 코어가 결합된 유도 결합 플라즈마 소스
CN1290399A (zh) 在等离子体中产生激活/离子化粒子的装置
US12327713B2 (en) Plasma reactor for inductively coupled plasma and method of assembling the same
KR100972371B1 (ko) 복합 플라즈마 소스 및 이를 이용한 가스 분리 방법
KR100743842B1 (ko) 자속 채널에 결합된 플라즈마 챔버를 구비한 플라즈마반응기
KR100805558B1 (ko) 마그네틱 코어에 결합된 다중 방전 튜브를 구비한 유도 결합 플라즈마 소스
KR100772447B1 (ko) 내장 마그네틱 코어를 갖는 유도 결합 플라즈마 소스
KR101406203B1 (ko) 마이크로파 플라즈마 어플리케이터 및 원격 플라즈마 반도체 식각장비
KR101161201B1 (ko) 고온의 플라즈마 반응기
KR102467297B1 (ko) 마그네틱 코어 방열패드
JP2006291319A (ja) プラズマ発生装置およびこれを用いた成膜方法
CN111370281A (zh) 等离子体刻蚀装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant