CN107845713A - Die bond fixing method - Google Patents
Die bond fixing method Download PDFInfo
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- CN107845713A CN107845713A CN201610829884.0A CN201610829884A CN107845713A CN 107845713 A CN107845713 A CN 107845713A CN 201610829884 A CN201610829884 A CN 201610829884A CN 107845713 A CN107845713 A CN 107845713A
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- fixing method
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000003466 welding Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 40
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000010422 painting Methods 0.000 claims description 4
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- -1 support Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012827 research and development Methods 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 235000011464 Pachycereus pringlei Nutrition 0.000 description 1
- 240000006939 Pachycereus weberi Species 0.000 description 1
- 235000011466 Pachycereus weberi Nutrition 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
On a kind of die bond fixing method, it is comprised the steps of the present invention：Plural microwafer is provided, a substrate is provided, scaling powder, one first placement step, one first applying heat, one second placement step and one second applying heat for being in paste is provided.First and second placement step is that part microwafer is located at into substrate.First applying heat is that the scaling powder is heated into the shape that is in a liquid state, and cools down the scaling powder and the chip is mutually located with the substrate.Second applying heat is the mutual welding of second electrode group for the first electrode group and substrate for making the chip, is cooled to normal temperature afterwards.
Description
Technical field
The present invention is related to a kind of die bond fixing method.
Background technology
Light-emittingdiode (LED) frivolous, power saving and lasts a long time etc. many excellent because it has a preferable color saturation
Characteristic more, and attract manufacturer dealer actively research and development and application, such as LED backlight module, OLED, AMOLED Display Technique.However,
With the development of science and technology existing LED technology can not meet the aspect to be applied, for example, more often use at present
AMOLED Display Techniques, its shortcoming, which is under over-colored saturation distortion, sunlight to understand, watches and uses rear screen for a long time
Stigmatic problem.
Therefore, it is necessary to which the technology for setting about research and development a new generation is current to solve the problems, such as, wherein, one of research and development technology emphasis is
Micro- light-emittingdiode (Micro-LED).Micro- light-emittingdiode can be applied to display, display screen, wearable device and come back aobvious
Show part (such as google glasses) or VR 3C Products.However, due to all pole of the size used in the technology of micro- light-emittingdiode
Small (micron order), it is therefore, very harsh on permissible accuracy and yield in production, yield and quality how are lifted, into
To desire most ardently improved target now.
Therefore, it is necessary to a kind of novelty and die bond fixing method are provided with progressive, it is above-mentioned to solve the problems, such as.
The content of the invention
It is a primary object of the present invention to provide a kind of die bond fixing method, scaling powder is melted by secondary temperature elevation respectively
And the coat of metal, wafer cell strong fix positively effectively can be combined into precision and stability, energy in base unit, raising
Effectively improve product yield.
To reach above-mentioned purpose, the present invention provides a kind of die bond fixing method, and it is comprised the steps of：It is miniature to provide plural number
Chip, respectively the microwafer be provided with a first electrode group；One substrate is provided, and the substrate is positioned at a die bond board, the base
Plate is provided with the plural second electrode group corresponding with the plural first electrode group；One scaling powder for being in paste is provided, this is helped into weldering
Agent is located at the second electrode group；One first placement step, according to a first order schematically by the of the part micro- shape chip of the plural number
One electrode group is located at the second electrode group of the substrate, and the scaling powder connects first and second electrode group, wherein, the first order
Pattern is that upper compartment of terrain configures in the vertical and laterally；One first applying heat, this is made with the heating of one first predetermined temperature
Scaling powder is in a liquid state shape, while carries out compression motion and force first and second electrode group close to each other, cools down this afterwards and helps weldering
Agent and the scaling powder is positioned first and second electrode group；One second placement step, according to a second order schematically by portion
The first electrode of the micro- shape chip of the plural number is divided to be mounted on the second electrode group of the substrate, the scaling powder connects first and second electricity
Pole group, wherein, the second order pattern is opposite with the first order pattern；Repeat first applying heat；One second adds
Hot pressurization steps, being heated and being pressurizeed with one second predetermined temperature makes the first electrode group and the second electrode group welding, Zhi Houleng
But to normal temperature.
Preferably, first predetermined temperature is between 120 DEG C to 230 DEG C.
Preferably, second predetermined temperature is more than 230 DEG C and no more than 330 DEG C.
Preferably, the second electrode group has additionally comprised a coat of metal, described in first applying heat
First electrode group described in scaling powder welding and the coat of metal, the coat of metal are sequentially provided with a tin bed of material, a bronze medal from outside to inside
The bed of material and a basalis, the material of the basalis are selected from nickel or titanium, and second predetermined temperature is more than or equal to the tin bed of material
Fusing point.
Preferably, the coat of metal is additionally provided with a gold medal bed of material, and the golden bed of material is covered in the tin bed of material.
Preferably, the thickness of the tin bed of material is between 1 μm to 10 μm.
Preferably, between the thickness of the tin bed of material is 5 μm to 7 μm.
Preferably, the distance of adjacent two microwafers is less than 200 μm in one direction, each microwafer
Area between 10 μm2To 300 μm2Between.
Preferably, the scaling powder is located at described second using one of which modes such as screen painting, single-point setting, sprayings
Electrode group.
Preferably, the upper surface of the coat of metal is in plane that first predetermined temperature is 180 DEG C；Described second
Predetermined temperature is 260 DEG C；The substrate is selected from FR-4 substrates, BT substrates, glass, support, ceramics, aluminium base, copper base, silicon
Substrate, flexible base plate (PI) and sapphire one of which；The scaling powder is by the way of single-point setting located at the described second electricity
Pole group, less than 200 μm, the area of each microwafer is less than the distance of two adjacent microwafers in one direction
5 squares of Mill (mil2)；The die bond fixing method is separately provided with a track element and a heater, and the track element is provided with one
Heating location and a cooling position, the substrate can movably be located at the track list between the heating location and the cooling position
Member, the heater heat located at the heating location to the substrate 3；The pressure size of pressurization is public for every 5 squares of Mills 1
Gram to 100 g of (1~100g/5mil2)。
The beneficial effects of the present invention are：
The present invention provides a kind of die bond fixing method, and scaling powder and the coat of metal are melted respectively by secondary temperature elevation, can
Wafer cell strong fix is positively effectively combined into precision and stability, also, scaling powder and tin in base unit, raising
The bed of material is not easy excessive between gap, to avoid two adjacent microwafers from producing short circuit, can effectively improve product yield.This
Outside, scaling powder can be combined with plural second electrode on demand and according to specific distribution pattern, and success rate is combined to improve.
Brief description of the drawings
Fig. 1 is the step flow chart of one embodiment of the invention.
Fig. 2 be micro- shape chip of one embodiment of the invention be incorporated into substrate make cardon.
Fig. 3 is the partial enlarged drawing of the second electrode group of one embodiment of the invention.
Fig. 4 is the partial enlarged drawing of the coat of metal of one embodiment of the invention.
Fig. 5 and Fig. 6 is the schematic diagram of first and second placement step of one embodiment of the invention.
Fig. 7 is the heating pressurization schematic diagram of one embodiment of the invention.
Fig. 8 is the partial enlarged drawing of the coat of metal of further embodiment of this invention.
Reference
1：Die bond board；2：Microwafer；21：First electrode group；3：Substrate；31：Second electrode group；4：Scaling powder；5、
5A：The coat of metal；51：The tin bed of material；52：The copper bed of material；53：Basalis；54：The golden bed of material；6：Suction nozzle；7：Pressing means；8：Track list
Member；9：Heater.
Embodiment
Below only with the possible embodiment aspect of the embodiment explanation present invention, so and to be not used to the limitation present invention claimed
Category, conjunction are first chatted bright.
Fig. 1 to Fig. 5 is refer to, it shows the preferred embodiment of the present invention, and die bond fixing method of the invention, it is included
Following steps：
Plural microwafer 2 is provided, respectively the microwafer 2 is provided with a first electrode group 21；One substrate 3 is provided, and should
Substrate 3 is positioned at a die bond board 1, and the substrate 3 is provided with the plural second electrode group corresponding with the plural first electrode group 21
31；One scaling powder 4 for being in paste is provided, the scaling powder 4 is located at the second electrode group 31；One first placement step, according to one
The first electrode group 21 of the part micro- shape chip of the plural number is located to the second electrode group 31 of the substrate 3 one pattern of rows and columns, this is helped
Solder flux 4 connects first and second electrode group 21,31, wherein, the first order pattern is in the vertical and transverse direction goes up compartment of terrain
Configuration；One first applying heat, the scaling powder 4 is in a liquid state shape with the heating of one first predetermined temperature, while pressurizeed
Action forces first and second electrode group 21,31 close to each other, cools down the scaling powder 4 afterwards and positions the scaling powder 4
First and second electrode group 21,31；One second placement step, according to a second order schematically by the part micro- shape chip of the plural number
First electrode group 21 be located at the substrate 3 second electrode group 31, the scaling powder 4 connect first and second electrode group 21,31,
Wherein, the second order pattern is opposite with the first order pattern；Repeat first applying heat；One second heating pressurization
Step, being heated and being pressurizeed with one second predetermined temperature makes the first electrode group 21 and the welding of second electrode group 31, cools down afterwards
To normal temperature.
It is noted that because the microwafer 2 is very small, in order to avoid clamping, power is excessive to cause the microwafer 2
It is impaired, it is preferred that the microwafer 2 is moved into the substrate 3 using a suction nozzle 6.Similarly, the gimmick of pressurization can also pass through
Special pressing means 7 press to the microwafer 2, wherein, the pressure size of pressurization is 1 g to 100 of every 5 squares of Mills
G (1~100g/5mil2).The substrate 3 is selected from FR-4 substrates, BT substrates, glass, support, ceramics, aluminium base, copper-based
Plate, silicon substrate, flexible base plate (PI) and sapphire one of which.
The oxide on the surface of first and second electrode group 21,31 or pollution can be removed, carried using the scaling powder 4
Height combines quality；Also, the scaling powder 4 can also protect surface to be welded not aoxidize once again.Importantly, this first plus
Hot pressurization steps are also first time die bond (pre-determined bit), can be changed into solid-state by liquid after the scaling powder 4 cooling is risen again, enter
And link and fix first and second electrode group 21,31, in other words, respectively the microwafer 2 can be positioned at by the scaling powder 4
The substrate 3.Wherein, first predetermined temperature preferably setting between 120 DEG C to 230 DEG C, is less also easy to produce to other elements
Heat affecting, that is to say, that during from the scaling powder 4, its fusing point is preferably located at or less than this temperature range, to can be more quickly
Heating melting is carried out to the scaling powder 4, energy resource consumption is saved, shortens the production time.
To say in more detail, the second electrode group 31 has additionally comprised a coat of metal 5, in first applying heat,
The welding of the scaling powder 4 first electrode group 21 and the coat of metal 5.Wherein, the coat of metal 5 can lead to overetched mode shape
Into.It is preferred that the upper surface of the coat of metal 5 is in plane, and have more and smooth-going contact area, when with the first electrode
Group 21 can be in firm state after combining.
In more detail, the coat of metal 5 is sequentially provided with a tin bed of material 51, a bronze medal bed of material 52 and a basalis from outside to inside
53, the material of the basalis 53 is selected from nickel or titanium, wherein, second predetermined temperature is more than or equal to the fusing point of the tin bed of material 51.
Therefore it should be understood that second applying heat is mainly to melt the tin bed of material 51 with the first electrode group 21 to be connected
Knot, and the whole die bond is completed after the tin bed of material 51 cooling is risen again and consolidates process, therefore second applying heat is again
It can be described as second of die bond.Similarly, in order to have the preferable heating-up time and save processing cost, illustrate but be not limited to, this
The preferably setting of two predetermined temperatures is more than 230 DEG C and no more than 330 DEG C.In the present embodiment, first predetermined temperature is set as 180
DEG C, and second predetermined temperature is set as 260 DEG C, to allow the tin bed of material 51 positively can melt completely, and the scaling powder 4
It can be vapored away under this state of temperature, and have preferable finished product.
Addedly to illustrate, the coat of metal 5 can also there are other forms, the gold of another embodiment as shown in Figure 8
Belonging to coating 5A, coat of metal 5A is additionally provided with a gold medal bed of material 54, and the golden bed of material 54 is covered in the tin bed of material 51, wherein, gold material
Layer 54 thickness be 0.2 μm, before not being combined, the golden bed of material 54 can prevent other metal layers, and be maintained at compared with
Good state.
Fig. 1 to Fig. 6 the present embodiment is refer again to, the distance (D) of two adjacent microwafers 2 is small in one direction
In 200 μm, and respectively the area of microwafer 2 between 10 μm2To 300 μm2Between.From the foregoing, each chi of the microwafer 2
Very little and adjacent spacing is all very tiny, therefore adverse consequences is easily produced because of slight variations, and then reduces yield.Also, at this
The area of the respectively microwafer 2 in embodiment is less than 5 squares of Mill (mil2), therefore, in order to reach the production for having high yield
Quality, (i.e. first and second heating adds first and second electrode group 21,31 by the way of second order segmentation hot binding
Press step).
Compared with furthermore, it is understood that first and second electrode group 21,31 traveling shift length to be combined originally is cut
Carried out into the two-stage, allow each first and second 21,31 displacement close to each other of electrode group to diminish so that molten condition
The situation that the scaling powder 4 or the tin bed of material 51 are less susceptible to stress and splashed occurs, and adjacent two microwafers 2 are less likely
There is the situation for being unpredictably electrically connected with and having short circuit to produce, and can avoid causing the substrate 3 or other circuits, element to have not
Good influence.It is preferred that the scaling powder 4 can select non-conductive and non-corrosive disposable series (such as rosin organic system), more may be used
The problems such as effectively avoiding short circuit, and have and preferably combine success rate.It is another it is preferred that the tin bed of material 51 thickness between 1 μm extremely
Between 10 μm, can further ensure that be not easy when the tin bed of material 51 is squeezed it is excessive between the gap of two microwafers 2.Through
Multiple actual production test is crossed, when the thickness of the tin bed of material 51 is 5 μm to 7 μm, can have and preferably combine quality.
In the present embodiment, the scaling powder 4 is located at the second electrode group 31 by the way of single-point setting, therefore except should
Scaling powder 4 once all outside the plural second electrode group 31, also can with this first or second order pattern demand sequentially
The scaling powder 4 is combined with the plural second electrode.Certainly, it is not limited to the setting gimmick of the scaling powder 4.According to it is various not
Same demand, the scaling powder 4 can also be located at the second electrode group 31 by the way of screen painting.Or the scaling powder 4 is using spray
The mode of painting is located at the second electrode group 31, also without can not.
To be addedly, refer to Fig. 7, it is preferred that the die bond fixing method is separately provided with a track element 8 and a heating
Device 9, the track element 8 are provided with a heating location and a cooling position, the substrate 3 can the heating location and the cooling position it
Between be movably located at the track element 8, the heater 9 heats located at the heating location to the substrate 3, waits heating to finish
Afterwards, the track element 8 can drive the substrate 3 and the plural microwafer 2 to be together moved to the cooling position and cooled.
To sum up, die bond fixing method of the present invention melts scaling powder by stages by first and second applying heat
Or the tin bed of material, and secondary die bond is carried out, the combination stability of microwafer unit and substrate 3 can be lifted.Also, scaling powder and
The tin bed of material is not easy excessive between gap, to avoid two adjacent microwafers from producing short circuit, and ensures to combine success rate (good
Rate).In addition, scaling powder can combine with plural second electrode on demand and according to specific distribution pattern, it is combined into improving
Power.
Claims (10)
1. a kind of die bond fixing method, it is characterised in that comprise the steps of：
Plural microwafer is provided, respectively the microwafer is provided with a first electrode group；
One substrate is provided, and the substrate is positioned at a die bond board, the substrate is provided with corresponding with the plural first electrode group
Plural second electrode group；
One scaling powder for being in paste is provided, the scaling powder is located at the second electrode group；
One first placement step, the first electrode of the part micro- shape chip of the plural number is schematically mounted on the base according to a first order
The second electrode group of plate, the scaling powder connect first and second electrode group, wherein, the first order pattern in the vertical and
Compartment of terrain configures in transverse direction；
One first applying heat, the scaling powder is set to be in a liquid state shape with the heating of one first predetermined temperature, while it is dynamic to carry out pressurization
Force first and second electrode group close to each other, cool down the scaling powder afterwards and make the scaling powder position this first and
Two electrode groups；
One second placement step, the first electrode of the part micro- shape chip of the plural number is schematically mounted on the base according to a second order
The second electrode group of plate, the scaling powder connect first and second electrode group, wherein, the second order pattern is and the first row
Row pattern is opposite；
Repeat first applying heat；
One second applying heat, being heated and being pressurizeed with one second predetermined temperature makes the first electrode group and the second electrode group
Welding, normal temperature is cooled to afterwards.
2. die bond fixing method as claimed in claim 1, it is characterised in that first predetermined temperature is between 120 DEG C to 230
Between DEG C.
3. die bond fixing method as claimed in claim 1, it is characterised in that second predetermined temperature is more than 230 DEG C and not
More than 330 DEG C.
4. die bond fixing method as claimed in claim 1, it is characterised in that the second electrode group has additionally comprised a metal-plated
Layer, in first applying heat, first electrode group and the coat of metal, the metal-plated described in the scaling powder welding
Layer is sequentially provided with a tin bed of material, a bronze medal bed of material and a basalis from outside to inside, and the material of the basalis is selected from nickel or titanium, and described the
Two predetermined temperatures are more than or equal to the fusing point of the tin bed of material.
5. die bond fixing method as claimed in claim 4, it is characterised in that the coat of metal is additionally provided with a gold medal bed of material, should
The golden bed of material is covered in the tin bed of material.
6. die bond fixing method as claimed in claim 4, it is characterised in that the thickness of the tin bed of material is between 1 μm to 10 μm
Between.
7. die bond fixing method as claimed in claim 6, it is characterised in that the thickness of the tin bed of material be 5 μm to 7 μm it
Between.
8. die bond fixing method as claimed in claim 1, it is characterised in that the adjacent two miniature crystalline substances in one direction
The distance of piece is less than 200 μm, and the area of each microwafer is between 10 μm2To 300 μm2Between.
9. die bond fixing method as claimed in claim 1, it is characterised in that the scaling powder is set using screen painting, single-point
The one of which mode such as put, spray and being located at the second electrode group.
10. die bond fixing method as claimed in claim 7, it is characterised in that the upper surface of the coat of metal in plane,
First predetermined temperature is 180 DEG C；Second predetermined temperature is 260 DEG C；The substrate is selected from FR-4 substrates, BT bases
Plate, glass, support, ceramics, aluminium base, copper base, silicon substrate, flexible base plate and sapphire one of which；The scaling powder is adopted
The mode set with single-point is located at the second electrode group, and the distance of two adjacent microwafers is less than in one direction
200 μm, the area of each microwafer is less than 5 squares of Mills；The die bond fixing method be separately provided with a track element and
One heater, the track element are provided with a heating location and a cooling position, and the substrate can be in the heating location and the cooling
The track element is movably located between position, the heater heats located at the heating location to the substrate 3；Pressurization
Pressure size be every 1 g to 100 g of 5 squares of Mills.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610829884.0A CN107845713A (en) | 2016-09-19 | 2016-09-19 | Die bond fixing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610829884.0A CN107845713A (en) | 2016-09-19 | 2016-09-19 | Die bond fixing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107845713A true CN107845713A (en) | 2018-03-27 |
Family
ID=61656915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610829884.0A Pending CN107845713A (en) | 2016-09-19 | 2016-09-19 | Die bond fixing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107845713A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111628063A (en) * | 2020-03-04 | 2020-09-04 | 深圳雷曼光电科技股份有限公司 | Die bonding method for Micro-LED |
| WO2023045288A1 (en) * | 2021-09-24 | 2023-03-30 | 上海交通大学 | Solder-free welded joint and welding manufacturing method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080157395A1 (en) * | 2006-12-28 | 2008-07-03 | Luc Belanger | Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers |
| US20090289364A1 (en) * | 2008-05-21 | 2009-11-26 | Rohm Co., Ltd. | Semiconductor device and a method for manufacturing the same |
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| US20080157395A1 (en) * | 2006-12-28 | 2008-07-03 | Luc Belanger | Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers |
| US20090289364A1 (en) * | 2008-05-21 | 2009-11-26 | Rohm Co., Ltd. | Semiconductor device and a method for manufacturing the same |
| US20090321926A1 (en) * | 2008-06-27 | 2009-12-31 | Panasonic Corporation | Mounting structure and mounting method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111628063A (en) * | 2020-03-04 | 2020-09-04 | 深圳雷曼光电科技股份有限公司 | Die bonding method for Micro-LED |
| WO2023045288A1 (en) * | 2021-09-24 | 2023-03-30 | 上海交通大学 | Solder-free welded joint and welding manufacturing method therefor |
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