CN107833952A - A kind of high-power LED encapsulation technique - Google Patents
A kind of high-power LED encapsulation technique Download PDFInfo
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- CN107833952A CN107833952A CN201711216180.7A CN201711216180A CN107833952A CN 107833952 A CN107833952 A CN 107833952A CN 201711216180 A CN201711216180 A CN 201711216180A CN 107833952 A CN107833952 A CN 107833952A
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- silica gel
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- power led
- led encapsulation
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000005538 encapsulation Methods 0.000 title claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000000741 silica gel Substances 0.000 claims abstract description 61
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000001816 cooling Methods 0.000 claims abstract description 31
- 210000005056 cell body Anatomy 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 12
- 238000005286 illumination Methods 0.000 abstract description 6
- 229960001866 silicon dioxide Drugs 0.000 description 44
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of high-power LED encapsulation technique, comprises the following steps, a, prepares package cooling substrate, LED lamp is welded on the package cooling substrate, the first layer of silica gel is coated on the package cooling substrate；B, some dome-type grooves are formed in first layer of silica gel；C, coated lens silica gel and extended in the hemispherical groove outside the hemispherical groove, form sphere lenses；D, the second layer of silica gel is coated on the sphere lenses top.The high-power LED encapsulation technique of the present invention uses sphere lenses, solves the technical problem that light source brightness of illumination is not enough concentrated, it is not necessary to carry out secondary reshaping, technique is simple, reduces cost.In addition, need not smear fluorescent material on chip compared with prior art, the quantum efficiency for solving fluorescent material caused by high temperature declines, the problem of causing luminance-reduction.
Description
Technical field
The invention belongs to field of semiconductor package, and in particular to a kind of high-power LED encapsulation technique.
Background technology
LED has the characteristics of long lifespan, luminous efficiency are high, colour rendering is good, safe and reliable, rich in color and easy to maintain.
In current environmental pollution getting worse, under the background of climate warming and energy growing tension, grown up based on great power LED
Semiconductor illumination technique has been acknowledged as one of 21 century high-tech sector most with prospects.Now, LED is used more
GaN base blue light wick adds the mode of yellow fluorescence to produce white light, to realize illumination.
However, there is following defect in prior art：
1st, because the light that LED light source is sent typically is distributed in divergence expression, i.e. lambertian distribution, this causes light source brightness of illumination not
Enough to concentrate, existing silica-gel lens generally require carries out secondary reshaping by outer lens, to adapt to the lighting demand of specific occasion,
Its complex process, and add production cost.
2nd, in existing high-power LED encapsulation, fluorescent material is usually to be applied directly on chip surface.Due to chip pair
Absorption be present in the light of back scattering, therefore, this mode directly coated will reduce the efficiency of light extraction of encapsulation.Separately
Outside, fluorescent material is applied directly on chip, high temperature caused by chip can be remarkably decreased the quantum efficiency of fluorescent material, so as to tight
The luminous efficiency of encapsulation is had influence on again.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the invention provides one kind can improve efficiency of light extraction, stream
Obvious results rate, technique is simple, saves the high-power LED encapsulation technique of expense.
In order to realize foregoing invention purpose, the technical solution adopted by the present invention is：
A kind of high-power LED encapsulation technique, comprises the following steps：
A, package cooling substrate is prepared, LED lamp is welded on the package cooling substrate, on package cooling substrate
Coat the first layer of silica gel；
B, some dome-type grooves are formed in the first layer of silica gel；
C, coated lens silica gel and extended in the hemispherical groove outside hemispherical groove, form sphere lenses；
D, the second layer of silica gel is coated on the sphere lenses top.
Further, the package cooling substrate for preparing specifically includes：
A1, the original heat-radiating substrate of selection；
A2, in the original plane of heat-radiating substrate one some cell bodies spaced a predetermined distance are opened up along width, obtained
To package cooling substrate；
Wherein, the cell body is semi-cylindrical groove body.
Further, the step b is specifically included：
B1, the first hemispherical is compressed on to first layer of silica gel, forms hemispherical groove；
B2, under the first predetermined temperature is baked to first layer of silica gel first scheduled time；
B3, remove first hemispherical.
Further, the step c is specifically included：
C1, the coated lens silica gel in the hemispherical groove, form lower half spherical structure；
C2, using first hemispherical, in the lower semisphere structure upper coated lens silica gel, be correspondingly formed
Semiglobe, the lower half spherical structure combine to form sphere lenses with the upper half spherical structure.
Further, the step d is specifically included：
D1, using the second hemispherical hemispherical convex lens structure is formed in second layer of silica gel；
D2, under the second predetermined temperature is baked to first layer of silica gel second scheduled time；
D3, remove second hemispherical.
Further, the first layer of silica gel refractive index is less than the refractive index of second layer of silica gel, and described spherical
Mirror refractive index is more than the refractive index of second layer of silica gel.
Further, first predetermined temperature is 90 DEG C -125 DEG C, and first scheduled time is 15min-60min.
Further, second predetermined temperature is 100 DEG C -150 DEG C, and second scheduled time is 4h-12h.
Further, the array of silica-gel lens formation rule on the package cooling substrate.
Further, the package cooling substrate is aluminum cooling substrates.
The beneficial effects of the invention are as follows：
1st, high-power LED encapsulation technique of the invention uses sphere lenses, solves what light source brightness of illumination was not enough concentrated
Technical problem, it is not necessary to carry out secondary reshaping, technique is simple, reduces cost.
2nd, technique of the invention opens up cell body on package cooling substrate, and the cell body is the passage of air circulation, utilizes sky
The thermal convection current of gas, adds radiating effect.
3rd, fluorescent material need not be smeared on chip using the technique of the present invention, the amount for solving fluorescent material caused by high temperature
Sub- efficiency declines, the problem of causing luminance-reduction.
4th, the silica gel of different refractivity is used using the technique of the present invention, and lens is formed in silica gel, solve LED core
The problem of piece is luminous scattered so that the light that light source is sent can be concentrated more, improve light source utilization rate.
5th, technique of the invention uses aluminium heat-radiating substrate, and its thermal capacitance is big, it is not easy to deforms, is contacted tightly with fin bottom surface
It is close, good heat dissipation effect.
Brief description of the drawings
Fig. 1 is a kind of high-power LED encapsulation process chart provided in an embodiment of the present invention；
Fig. 2 is wick structure schematic diagram provided in an embodiment of the present invention；
Fig. 3 is lens structure of heat dissipation substrate schematic diagram provided in an embodiment of the present invention；
Fig. 4 is lens packages structural representation provided in an embodiment of the present invention；
Fig. 5 is sphere lenses rectangular array schematic diagram provided in an embodiment of the present invention；
Fig. 6 is that sphere lenses diamond array provided in an embodiment of the present invention lists intention.
Embodiment
With reference to embodiment, the present invention is described in further detail.But this should not be interpreted as to the present invention
The scope of above-mentioned theme is only limitted to following embodiment, all models that the present invention is belonged to based on the technology that present invention is realized
Enclose.
Embodiment one
Fig. 1 is a kind of high-power LED encapsulation process chart provided in an embodiment of the present invention, is comprised the following steps：
A, package cooling substrate is prepared, LED lamp is welded on the package cooling substrate, on package cooling substrate
Coat the first layer of silica gel；
B, some dome-type grooves are formed in the first layer of silica gel；
C, coated lens silica gel and extended in the hemispherical groove outside hemispherical groove, form sphere lenses；
D, the second layer of silica gel is coated on the sphere lenses top.
In order to be packaged, heat-radiating substrate must keep cleaning, it is necessary to spot above, especially oil stain be cleaned dry
Only, and dried, keep the drying of heat-radiating substrate.Therefore need to clean heat-radiating substrate and dried before formal encapsulation
It is roasting.After heat-radiating substrate cleans baking completion, the lead of chip to be welded, welding uses the reflow soldering process of standard,
It is mainly included the following steps that：Printing solder, die bond are examined, reflow soldering.Finally to the LED after the completion of preparation carry out detection and
Packaging.
First layer of silica gel directly contacts the RGB three-primary color LEDs on package cooling substrate, its structural representation such as Fig. 2
It is shown.A diameter of 10 μm -200 μm of sphere lenses, the spacing of adjacent sphere lenses is 10 μm -200 μm, so as to efficient
Concentrate light source.Because fluorescent material is graininess, light emission rate can be caused to decline.Using RGB wicks be not in fluorescent material because
The problem of doping problem of non-uniform causes light extraction uneven occurs in material.
The high-power LED encapsulation technique of the embodiment of the present invention uses sphere lenses, solves light source brightness of illumination and not enough collects
In technical problem, it is not necessary to carry out secondary reshaping, technique is simple, reduces cost.In addition, compared with prior art need not be in core
Fluorescent material is smeared on piece, the quantum efficiency for solving fluorescent material caused by high temperature declines, the problem of causing luminance-reduction.
In a detailed embodiment, the package cooling substrate for preparing specifically includes：
A1, the original heat-radiating substrate of selection；
A2, in the original plane of heat-radiating substrate one some cell bodies spaced a predetermined distance are opened up along width, obtained
To package cooling substrate；
Wherein, the cell body is semi-cylindrical groove body.
Because the safe junction temperature of LED chip work should can cause light intensity to reduce, light within 110 DEG C, if junction temperature is too high
A series of problems, such as spectral migration, colour temperature raise, thermal stress increases, chip accelerated ageing, LED service life is greatly reduced,
Simultaneously it is also possible to cause the layer of silica gel accelerated ageing encapsulated on chip, its light transmission efficiency is influenceed.Due in LED input powers
The energy of some is converted into luminous energy, other then be converted into heat energy, scattered in order to improve for the LED chip that power is larger
Thermal effect, the heat-radiating substrate with trough body structure is obtained after handling the original heat-radiating substrate.Specific heat-radiating substrate
Structure is the passage of air circulation referring to Fig. 3, the cell body, using the thermal convection current of air, adds radiating effect.The diameter of cell body
For 0.3mm-2mm.Under the size, it can reach in the case where not changing heat-radiating substrate intensity, increase wind as big as possible
The size in road.
In a detailed embodiment, the step b is specifically included：
B1, the first hemispherical is compressed on to first layer of silica gel, forms hemispherical groove；
B2, under the first predetermined temperature is baked to first layer of silica gel first scheduled time；
B3, remove first hemispherical.
Wherein, first predetermined temperature is 90 DEG C -125 DEG C, and first scheduled time is 15min-60min.
In a detailed embodiment, the step c is specifically included：
C1, the coated lens silica gel in the hemispherical groove, form lower half spherical structure；
C2, using first hemispherical, in the lower semisphere structure upper coated lens silica gel, be correspondingly formed
Semiglobe, the lower half spherical structure combine to form sphere lenses with the upper half spherical structure.During applying episphere silica gel,
Formation upper half spherical structure on silica gel is covered on mould.
In a detailed embodiment, the step d is specifically included：
D1, using the second hemispherical hemispherical convex lens structure is formed in second layer of silica gel；
D2, under the second predetermined temperature is baked to first layer of silica gel second scheduled time；
D3, remove second hemispherical.
Encapsulating structure schematic diagram as shown in Figure 4 is ultimately formed, is wherein the first layer of silica gel 22 on chip cooling substrate 21,
Sphere lenses 23 are coated between first layer of silica gel 22 and the second layer of silica gel 24.So that the half of sphere lenses 23 is embedded in the first silica gel
In layer 22, another part is wrapped up by the second layer of silica gel 24.
Wherein, second predetermined temperature is 100 DEG C -150 DEG C, and second scheduled time is 4h-12h.
In a detailed embodiment, the first layer of silica gel refractive index is less than the refractive index of second layer of silica gel,
And the sphere lenses refractive index is more than the refractive index of second layer of silica gel.The technique of the present invention uses the silicon of different refractivity
Glue, and lens are formed in silica gel, solve the problems, such as that LED chip is luminous scattered so that the light that light source is sent can more collect
In, improve light source utilization rate.In the present embodiment, the second layer of silica gel refractive index is 1.4-1.6.Such as methyl can be selected
High folding (1.54 optical index) organic silicon rubber of (1.41 index of refraction) silicon rubber, phenyl.Layer of silica gel refractive index is from bottom to top successively
Increase is to suppress to be totally reflected, because total reflection can cause emergent light to tail off, being totally reflected to the light of inside can be absorbed into
Useless heat., will be outside because the refractive index of one layer of silica gel of outermost is too big and outermost refractive index is not too big
The dozens of refringences of shape between layer and air, total reflection effect is serious, is unfavorable for printing opacity.
In a detailed embodiment, the array of silica-gel lens formation rule on the package cooling substrate.
Can be specifically rectangular array, rhombus array, triangular array, circular array etc., can be referring to Fig. 5, Fig. 6.
In a detailed embodiment, the package cooling substrate is aluminum cooling substrates.The aluminum cooling substrates thickness
For 0.5mm-10mm.The technique of the embodiment of the present invention uses aluminium heat-radiating substrate, and thermal capacitance is big, it is not easy to deforms, with fin bottom
Face contact is close, good heat dissipation effect.
Finally it should be noted that, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those within the art that, it still may be used
To be modified to the technical scheme described in foregoing embodiments, or equivalent substitution is carried out to which part technical characteristic；
And these modification or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (10)
1. a kind of high-power LED encapsulation technique, it is characterised in that comprise the following steps：
A, package cooling substrate is prepared, LED lamp is welded on the package cooling substrate, on the package cooling substrate
Coat the first layer of silica gel；
B, some dome-type grooves are formed in first layer of silica gel；
C, coated lens silica gel and extended in the hemispherical groove outside the hemispherical groove, form sphere lenses；
D, the second layer of silica gel is coated on the sphere lenses top.
2. high-power LED encapsulation technique according to claim 1, it is characterised in that described to prepare package cooling substrate tool
Body includes：
A1, the original heat-radiating substrate of selection；
A2, in the original plane of heat-radiating substrate one some cell bodies spaced a predetermined distance are opened up along width, obtain institute
State package cooling substrate；
Wherein, the cell body is semi-cylindrical groove body.
3. high-power LED encapsulation technique according to claim 1, it is characterised in that the step b is specifically included：
B1, the first hemispherical is compressed on first layer of silica gel, forms the hemispherical groove；
B2, under the first predetermined temperature is baked to first layer of silica gel first scheduled time；
B3, remove first hemispherical.
4. high-power LED encapsulation technique according to claim 1, it is characterised in that the step c is specifically included：
C1, the coated lens silica gel in the hemispherical groove, form lower half spherical structure；
C2, using first hemispherical, in the lower semisphere structure upper coated lens silica gel, be correspondingly formed episphere
Structure, the lower half spherical structure combine to form the sphere lenses with the upper half spherical structure.
5. high-power LED encapsulation technique according to claim 1, it is characterised in that the step d is specifically included：
D1, using the second hemispherical hemispherical convex lens structure is formed in second layer of silica gel；
D2, under the second predetermined temperature is baked to second layer of silica gel second scheduled time；
D3, remove second hemispherical.
6. according to the high-power LED encapsulation technique described in claim any one of 1-5, it is characterised in that first layer of silica gel
Refractive index be less than the refractive index of second layer of silica gel, and the refractive index of the sphere lenses is more than second layer of silica gel
Refractive index.
7. high-power LED encapsulation technique according to claim 3, it is characterised in that first predetermined temperature be 90 DEG C-
125 DEG C, first scheduled time is 15min-60min.
8. high-power LED encapsulation technique according to claim 5, it is characterised in that second predetermined temperature is 100
DEG C -150 DEG C, second scheduled time is 4h-12h.
9. according to the high-power LED encapsulation technique described in claim any one of 1-5, it is characterised in that the sphere lenses exist
The array of formation rule on the package cooling substrate.
10. according to the high-power LED encapsulation technique described in claim any one of 1-5, it is characterised in that the package cooling base
Plate is aluminum cooling substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711216180.7A CN107833952A (en) | 2017-11-28 | 2017-11-28 | A kind of high-power LED encapsulation technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711216180.7A CN107833952A (en) | 2017-11-28 | 2017-11-28 | A kind of high-power LED encapsulation technique |
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| Publication Number | Publication Date |
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| CN107833952A true CN107833952A (en) | 2018-03-23 |
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ID=61646082
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101313415A (en) * | 2005-11-21 | 2008-11-26 | 松下电工株式会社 | Light-emitting device |
| CN203192852U (en) * | 2013-04-28 | 2013-09-11 | 杭州龙尚光电有限公司 | Led packaging structure |
| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
| US8846424B2 (en) * | 2010-03-25 | 2014-09-30 | Micron Technology, Inc. | Multi-lens solid state lighting devices |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
-
2017
- 2017-11-28 CN CN201711216180.7A patent/CN107833952A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101313415A (en) * | 2005-11-21 | 2008-11-26 | 松下电工株式会社 | Light-emitting device |
| US8846424B2 (en) * | 2010-03-25 | 2014-09-30 | Micron Technology, Inc. | Multi-lens solid state lighting devices |
| CN203192852U (en) * | 2013-04-28 | 2013-09-11 | 杭州龙尚光电有限公司 | Led packaging structure |
| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
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