CN107833863A - The high temperature packaging connecting material and its encapsulation Joining Technology of a kind of law temperature joining - Google Patents
The high temperature packaging connecting material and its encapsulation Joining Technology of a kind of law temperature joining Download PDFInfo
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- CN107833863A CN107833863A CN201711054114.4A CN201711054114A CN107833863A CN 107833863 A CN107833863 A CN 107833863A CN 201711054114 A CN201711054114 A CN 201711054114A CN 107833863 A CN107833863 A CN 107833863A
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- 239000000463 material Substances 0.000 title claims abstract description 37
- 238000005538 encapsulation Methods 0.000 title claims abstract description 30
- 238000005304 joining Methods 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- 238000005516 engineering process Methods 0.000 title abstract description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910000679 solder Inorganic materials 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 12
- 239000011812 mixed powder Substances 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- 239000012298 atmosphere Substances 0.000 claims abstract description 8
- 239000003960 organic solvent Substances 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims abstract description 6
- 230000010355 oscillation Effects 0.000 claims abstract description 6
- 238000001291 vacuum drying Methods 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 235000011837 pasties Nutrition 0.000 claims 1
- 238000003756 stirring Methods 0.000 abstract description 5
- 238000004377 microelectronic Methods 0.000 abstract description 4
- 238000012536 packaging technology Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 abstract description 2
- 239000007791 liquid phase Substances 0.000 description 20
- 238000005245 sintering Methods 0.000 description 13
- 230000001052 transient effect Effects 0.000 description 13
- 229910003306 Ni3Sn4 Inorganic materials 0.000 description 12
- 229910018100 Ni-Sn Inorganic materials 0.000 description 8
- 229910018532 Ni—Sn Inorganic materials 0.000 description 8
- 229910000765 intermetallic Inorganic materials 0.000 description 8
- 238000010008 shearing Methods 0.000 description 8
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 235000019441 ethanol Nutrition 0.000 description 6
- 229910017755 Cu-Sn Inorganic materials 0.000 description 5
- 229910017927 Cu—Sn Inorganic materials 0.000 description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005219 brazing Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910016331 Bi—Ag Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910018471 Cu6Sn5 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- 229910007570 Zn-Al Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
Abstract
The high temperature packaging connecting material and its encapsulation Joining Technology of a kind of law temperature joining, belong to microelectronic packaging technology field.By tin powder and nickel by powder, uniformly mixing forms connecting material, and glass putty content atomic percent is 36.7~57%, and surplus is nickel powder；5~30 μm of glass putty average grain diameter, 5~20 μm of nickel powder average grain diameter；Mixed-powder stirs with organic solvent, is mixed into homogeneous paste or paste.Present invention process is that substrate first is had children outside the state plan into ripple oscillation cleaning, and cold wind dries up after taking-up；Then connecting material is printed on substrate solder side with silk screen, chip is alignd with connecting material, is assembled into chip/connecting material/circuit board connection structure, is put into after fixed in vacuum drying oven or atmosphere furnace；Finally it is rapidly heated to 300~340 DEG C, and is incubated 1h~5h, insulation terminates cooling, takes out and realize connection.Present invention process can make chip and substrate realize low temperature, the encapsulation of small pressure, and the joint heat endurance after encapsulation is good, and temperature resistant capability is strong.
Description
Technical field
The invention belongs to microelectronic packaging technology field, be related to a kind of law temperature joining high temperature packaging connecting material and its
Encapsulate Joining Technology.
Background technology
Electronic device of the development and application in the extreme environments such as high temperature, high power, high frequency is current power electronic technology neck
The emphasis direction of domain development.SiC, GaN and AlN etc. are partly led from first generation elemental semiconductorses (Si) and second generation compound
Third generation broad-band gap (WBS) semi-conducting material to grow up after body material (GaAs, GaP, InP).First and second generation tradition half
Conductor integrated circuit and device can not under more than 200 DEG C hot environments continuous firing, and power output is low, by high frequency, height
The influence of the conditions such as corrosion is serious.By comparison, the third generation wide bandgap semiconductor materials such as SiC and GaN have band gap loose, critical
The features such as breakdown voltage is high, thermal conductivity is high, carrier saturation drift velocity is big, its semiconductor circuit or device at~500 DEG C very
Still there is good transfer characteristic and ability to work under to higher temperature, conversion efficiency and operating temperature can be effectively improved, reduce
Requirement to cooling system, in Aero-Space, mixed power plant, high-efficiency photovoltaic/wind power system, oil gas drilling, nuclear power generating equipment
Deng there is important application value in the high temperature circuit and device in 300-500 DEG C of field.However, the broad-band gap such as SiC and GaN is partly led
The highest of body device allows operating temperature to depend not only on the property of semi-conducting material, is also limited by encapsulation technology, therefore solves
Certainly the high temperature resistant of chip and substrate, inexpensive interconnection technique and integrity problem have become current microelectronic there is an urgent need to
Solve the problems, such as.
For the demand of three generations's high temperature power chip especially SiC power chips High-temperature Packaging, both at home and abroad initial research
Thinking is exploitation high-temp solder.From high lead solder is substituted, Zn-Al bases, Bi-Ag bases, Au-Sn bases and Sn-Sb bases are developed
The high-temp solders such as solder base.TanimotoSatoshi of Japanese FUPET research institutions et al. uses the Zn-5Al for adding a small amount of Ge
Alloy has been successfully connected SiC power chips and DBC substrates, but connects temperature and be up to 415 DEG C, and joint long-term use temperature is simultaneously
Again no more than 250 DEG C, the high temperature resistant advantage of power chip of new generation can not be given full play to.In fact, think according to this tradition
Road --- the temperature resistant capability of soldered fitting is improved by improving the temperature resistant capability of solder in itself, so as to solve high temperature power device
The heatproof problem of encapsulation is extremely difficult.In general, brazing temperature, solder fusing point and soldered fitting allow in conventional brazing
Highest service temperature between relation be：Brazing temperature is higher than 30 DEG C -50 DEG C of solder fusing point, and solder fusing point is higher than highest
30 DEG C -50 DEG C of service temperature, it means that, the permission service temperature of soldered fitting is usually less than 50 DEG C -100 DEG C of brazing temperature.
In device encapsulation, carry out soldering higher than chip operating temperature and be obviously not allowed to, even and if allowing under chip operating temperature
Soldering is carried out, the heatproof of soldered fitting still has larger gap compared with the operating temperature that device allows, it is difficult to meets high temperature work(of new generation
The application requirement of rate device.
In recent years, thinking newest in terms of high temperature power chip connection of new generation is development " law temperature joining/height both at home and abroad
Warmly take labour " interconnection technique, its main purpose is to reduce package temperature as far as possible, reduces package thermal stress, avoids encapsulation process pair
The fire damage of device, and and can obtains heat resisting temperature as high as possible simultaneously.Therefore, transient liquid phase sintering connection skill is developed
Art.Its principle is to be used as connecting material using the mixed-powder of refractory metal and low-melting-point metal, is utilized in connection procedure low
Melting point metals powder melts to form liquid phase realization connection, while is reacted with the counterdiffusion of refractory metal powder solid-liquid, densification shape
Into high-melting-point articulamentum, so as to realize law temperature joining/high-temperature service of power chip.The research carried out in the world at present mainly collects
In in beautiful, Deng developed countries, the transient liquid phase sintering reaction system to have conducted a research have Sn-Bi-Ag systems, Cu-In systems and
Sn-Cu systems.Research shows, carries out transient liquid phase sintering connection using Sn-Bi-Ag systems, conversion zone temperature resistant capability is not higher than 250
DEG C, temperature resistant capability is relatively low.Connected using the transient liquid phase sintering that chip and substrate are realized at 300 DEG C of Cu-In systems, normal temperature after connection
Shearing strength of joint is only 8MPa；Connected using the Cu/Cu-Sn/Cu transient liquid phase sinterings realized at 280 DEG C of Cu-Sn systems, 400
Average shearing strength of joint at DEG C is also only 14.6MPa.Cu-In systems and the main original of Cu-Sn systems jointing low strength
Because being Cu too high levels in mixed-powder as solid phase components, the too small (Cu in Cu-In systems of articulamentum amount of liquid phase proportion
Mass ratio is more than 70%, and Cu mass ratio is more than 60% in Cu-Sn systems), have a strong impact on the bond strength of linkage interface.One
As need to apply larger welding pressure and could obtain the joint of higher force performance, technique applicability is poor.Therefore, develop new
Transient liquid phase sintering reaction system, the relative amount of amount of liquid phase is improved, connection temperature is reduced, reduces encapsulation pressure, lifting sub
Temperature resistant capability, to solving the problems, such as that microelectronic component high temperature packaging is significant.
The content of the invention
The purpose of the present invention is the encapsulation technology demand for high temperature power chip of new generation especially SiC power chips,
Solve to connect that temperature is too high, and welding pressure is excessive in existing high temperature power chip encapsulation technology, the problem of temperature capacity deficiency.
The present invention principle be using Ni-Sn as reaction system (W metal powder as high melting point component, metal Sn powder be low melting point
Component) in connection procedure low melting point liquid phase component Sn melt to be formed liquid phase realize connection, while with high-melting-point solid phase components Ni
Compound between mutual diffusion/reaction generation refractory metal, so as to realize the process of the high temperature resistant of articulamentum and densification.
Intermetallic compound in Ni-Sn systems near Sn sides is Ni3Sn4, and its composition is located at Ni28%-Sn72% (mass ratio),
The heatproof of the intermetallic compound is up to 798.9 DEG C, it means that amount of liquid phase is sufficient more than 3/4 (volume) in connection procedure
Amount of liquid phase causes connection can be achieved under less pressure, and under conditions of good connection characteristic is ensured, can allow
Appropriate Ni is excessive, to improve the toughness of articulamentum, improves connection reliability.
Present disclosure is asking for the high temperature power chip of new generation especially high temperature packaging of SiC power chips
Topic, there is provided the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation Joining Technology of a kind of law temperature joining.The present invention
Connecting material：By metallic tin powder and nickel by powder, uniformly mixing forms, wherein, glass putty content atomic percent is 36.7~
57%, surplus is nickel powder；5~30 μm of glass putty average grain diameter, 5~20 μm of nickel powder average grain diameter；Mixed-powder stirs with organic solvent
Mix, be mixed into homogeneous paste or paste, organic solvent is absolute ethyl alcohol.The encapsulation Joining Technology of the connecting material of the present invention：It is first
Substrate is first put into excusing from death ripple oscillation cleaning in acetone or absolute ethyl alcohol, cold wind dries up after taking-up；Then material will be connected with silk screen
Material is printed on substrate solder side, and chip is alignd with connecting material, is assembled into chip/connecting material/circuit board connection structure, Gu
It is put into after fixed in vacuum drying oven, vacuum environment pressure is less than 10-3Pa, or is put into after fixing in atmosphere furnace, is passed through argon gas or nitrogen,
Oxygen content is less than 8ppm in argon gas or nitrogen atmosphere；Finally be rapidly heated to 300 with 80~120 DEG C/min heating rate~
340 DEG C, and 60min~300min is incubated, insulation terminates to be cooled to less than 200 DEG C taking-up realization connections, connection under argon gas stream
During be continuously applied 0.02~0.1MPa welding pressures to complete.
The high temperature resistant transient liquid phase sintering connecting material and its packaging technology of a kind of law temperature joining provided by the invention can be with
Chip and substrate is set to realize that the encapsulation of low temperature (300~340 DEG C), small pressure (0.02~0.1MPa), high temperature resistant (798.9 DEG C) connects
Connect, there is advantages below compared with existing encapsulation technology：
(1) the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation work of a kind of law temperature joining provided by the invention
The enough high temperature packaging connections that chip is realized under conditions of 300~340 DEG C of artistic skill, have the advantages of encapsulation connection temperature is low.
(2) the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation work of a kind of law temperature joining provided by the invention
The enough high temperature packaging connections that chip is realized under 0.02~0.1MPa welding pressure of artistic skill, there is small excellent of welding pressure
Point.
(3) the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation work of a kind of law temperature joining provided by the invention
Artistic skill enough makes articulamentum be completely transformed into what Ni3Sn4 intermetallic compounds (fusing point is up to 798.9 DEG C) were formed with Cu-Sn systems
Cu6Sn5 intermetallic compounds (fusing point is 415 DEG C) are compared, and fusing point is higher, and joint temperature resistant capability is stronger.
(4) the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation work of a kind of law temperature joining provided by the invention
Artistic skill enough makes articulamentum be completely transformed into Ni3Sn4 intermetallic compounds, and heterogeneous microstructure is stable, and joint heat endurance is strong.
At 340 DEG C, apply 0.1MPa pressure, realize nickel plating SiC chips after being incubated 300min and plate the connection of Ni substrates, at 350 DEG C
The shearing strength of joint that is averaged down is up to 28.3MPa；Under air after timeliness 200h, average shearing strength of joint slightly raises.
(5) the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation work of a kind of law temperature joining provided by the invention
Skill can encapsulate at a lower temperature compared with traditional high-temp solder and its technique, and can higher than package temperature (300~
340 DEG C) under conditions of (350~798 DEG C) use, overcome conventional solder connection temperature be higher than temperature in use technological deficiency,
Optimize device packaging technology.
Embodiment
Describe to be used to disclose the present invention below so that those skilled in the art can realize the present invention.It is excellent in describing below
Embodiment is selected to be only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.
Embodiment 1
Metallic tin powder and metallic nickel powder are uniformly mixed first, wherein, glass putty content is 36.7~57% (atoms
Than), surplus is nickel powder, 30 μm of glass putty average grain diameter, 20 μm of nickel powder average grain diameter.By mixed-powder and organic solvent (anhydrous second
Alcohol) stir, be mixed into homogeneous paste or paste with standby.Then Ni substrates sonic oscillation in acetone or alcohol will be plated, will be taken out
Cold wind drying is with standby afterwards.Finally the Ni-Sn connecting materials silk-screen printing of preparation is plated on the substrate solder side cleaned up
Nickel SiC chips are assemblied on the substrate with solder by hierarchical link, are put into after fixed in vacuum drying oven, vacuum environment pressure is less than
10-3Pa, or be put into after fixing in atmosphere furnace, argon gas or nitrogen are passed through, oxygen content is less than 8ppm in atmosphere, and with 80~120
DEG C/min heating rates are rapidly heated to 300 DEG C, 300min is incubated, and be continuously applied 0.02MPa welding pressure to having connected
Into insulation terminates to be cooled to 180 DEG C of taking-ups under argon gas stream.
At 300 DEG C be incubated 300min after, articulamentum is comparatively dense, and Sn has completely reacted, microstructure mainly by
Ni3Sn4 intermetallic compounds and the Ni particles composition remained on a small quantity.The DSC results of articulamentum show that Sn fusing endothermic peak is
Through disappearing, there is Ni3Sn4 melting hump 798.9C ° of position, show that articulamentum changes completely via Sn and Ni simple substance
For dystectic Ni3Sn4 phases (798.9C ° of fusing point), articulamentum has higher temperature capacity.To SiC chips/Ni-Sn connections
Material/substrate connection carries out shear at high temperature test, and average shearing strength of joint is up to 24.0MPa at 350 DEG C.
Embodiment 2
Metallic tin powder and metallic nickel powder are uniformly mixed first, wherein, glass putty content is 36.7~57% (atoms
Than), surplus is nickel powder, 30 μm of glass putty average grain diameter, 10 μm of nickel powder average grain diameter.By mixed-powder and organic solvent (anhydrous second
Alcohol) stir, be mixed into homogeneous paste or paste with standby.Then Ni substrates sonic oscillation in acetone or alcohol will be plated, will be taken out
Cold wind drying is with standby afterwards.Finally the Ni-Sn connecting materials silk-screen printing of preparation is plated on the substrate solder side cleaned up
Nickel SiC chips are assemblied on the substrate with solder by hierarchical link, are put into after fixed in vacuum drying oven, vacuum environment pressure is less than
10-3Pa, or be put into after fixing in atmosphere furnace, argon gas or nitrogen are passed through, oxygen content is less than 8ppm in atmosphere, and with 80~120
DEG C/min heating rates are rapidly heated to 340 DEG C, 180min is incubated, and be continuously applied 0.1MPa welding pressure to having connected
Into insulation terminates to be cooled to 180 DEG C of taking-ups under argon gas stream.
At 340 DEG C be incubated 180min after, articulamentum is comparatively dense, and Sn has completely reacted, microstructure mainly by
Ni3Sn4 intermetallic compounds and the Ni particles composition remained on a small quantity.The DSC results of articulamentum show that Sn fusing endothermic peak is
Through disappearing, there is Ni3Sn4 melting hump 798.9C ° of position.This result shows articulamentum via Sn and Ni simple substance
Dystectic Ni3Sn4 phases (798.9C ° of fusing point) are completely transformed into, articulamentum has higher temperature capacity.To SiC chips/
Ni-Sn connecting materials/substrate connection carries out shear at high temperature test, and average shearing strength of joint is up to 24.3MPa at 350 DEG C.
Under air after 340 DEG C of timeliness 200h, average shearing strength of joint slightly raises at 350 DEG C.
Embodiment 3
Metallic tin powder and metallic nickel powder are uniformly mixed first, wherein, glass putty content is 36.7~57% (atoms
Than), surplus is nickel powder, 30 μm of glass putty average grain diameter, 5 μm of nickel powder average grain diameter.By mixed-powder and organic solvent (anhydrous second
Alcohol) stir, be mixed into homogeneous paste or paste with standby.Then Ni substrates sonic oscillation in acetone or alcohol will be plated, will be taken out
Cold wind drying is with standby afterwards.Finally the Ni-Sn connecting materials silk-screen printing of preparation is plated on the substrate solder side cleaned up
Nickel SiC chips are assemblied on the substrate with solder by hierarchical link, are put into after fixed in vacuum drying oven, vacuum environment pressure is less than
10-3Pa, or be put into after fixing in atmosphere furnace, argon gas or nitrogen are passed through, oxygen content is less than 8ppm in argon gas or nitrogen atmosphere, and
It is rapidly heated with 80~120 DEG C/min heating rates to 340 DEG C, is incubated 60min, and be continuously applied 0.02MPa welding pressure
Completed to connection, insulation terminates to be cooled to 180 DEG C of taking-ups under argon gas stream.
At 340 DEG C be incubated 60min after, articulamentum is comparatively dense, and Sn has completely reacted, microstructure mainly by
Ni3Sn4 intermetallic compounds and the Ni particles composition remained on a small quantity.The DSC results of articulamentum show that Sn fusing endothermic peak is
Through disappearing, there is Ni3Sn4 melting hump 798.9C ° of position.Show that articulamentum changes completely via Sn and Ni simple substance
For dystectic Ni3Sn4 phases (798.9C ° of fusing point), articulamentum has higher temperature capacity.To SiC chips/Ni-Sn connections
Material/substrate connection carries out shear at high temperature test, and average shearing strength of joint is up to 22.0MPa at 350 DEG C.
General principle, principal character and the advantages of the present invention of the present invention has been shown and described above.The technology of the industry
For personnel it should be appreciated that the present invention is not limited to the above embodiments, that described in above-described embodiment and specification is the present invention
Principle, various changes and modifications of the present invention are possible without departing from the spirit and scope of the present invention, these change and
Improvement is both fallen within the range of claimed invention.The protection domain of application claims by appended claims and its
Equivalent defines.
Claims (3)
- A kind of 1. high temperature packaging connecting material of law temperature joining, it is characterized in that being：Material is by metallic tin powder and nickel by powder Uniformly mixing composition, in mixed-powder, glass putty content atomic percent is 36.7~57%, and surplus is nickel powder, and by mixed powder End is made homogeneous paste or paste and connected for high temperature packaging.
- A kind of 2. resistance to high encapsulation connecting material of law temperature joining according to claim 1, it is characterized in that being：The mixing In powder, 5~30 μm of glass putty average grain diameter, 5~20 μm of nickel powder average grain diameter；Mixed-powder is stirred with organic solvent, is mixed into Homogeneous paste or paste, organic solvent are absolute ethyl alcohol.
- 3. a kind of encapsulation of the high temperature packaging connecting material of law temperature joining according to claim 1 or claim 2 connects Connect technique, it is characterised in that：Substrate is put into sonic oscillation in acetone or absolute ethyl alcohol first to clean, it is standby to take out cold wind drying With；Then pasty state or paste connecting material are printed on substrate solder side with silk screen, chip is alignd with connecting material, assembled Into chip/connecting material/circuit board connection structure, it is put into after fixed in vacuum drying oven, vacuum environment pressure is less than 10-3Pa, or fixed After be put into atmosphere furnace, be passed through argon gas or nitrogen, oxygen content is less than 8ppm in argon gas or nitrogen atmosphere；Finally with 80~120 DEG C/ Min heating rate is rapidly heated to 300~340 DEG C, and is incubated 60min~300min, and insulation terminates to cool down under argon gas stream Taken out to less than 200 DEG C and realize connection, 0.02~0.1MPa welding pressures are continuously applied in connection procedure to completion.
Priority Applications (1)
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| CN201711054114.4A CN107833863A (en) | 2017-10-31 | 2017-10-31 | The high temperature packaging connecting material and its encapsulation Joining Technology of a kind of law temperature joining |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783445A (en) * | 2019-10-17 | 2020-02-11 | 中国科学院上海硅酸盐研究所 | Soldering lug for connecting segmented thermoelectric device and preparation method thereof |
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2017
- 2017-10-31 CN CN201711054114.4A patent/CN107833863A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783445A (en) * | 2019-10-17 | 2020-02-11 | 中国科学院上海硅酸盐研究所 | Soldering lug for connecting segmented thermoelectric device and preparation method thereof |
| CN110783445B (en) * | 2019-10-17 | 2021-08-31 | 中国科学院上海硅酸盐研究所 | Soldering lug for connecting segmented thermoelectric device and preparation method thereof |
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Application publication date: 20180323 |